TIP47, TIP48, TIP49, TIP50 NPN SILICON POWER TRANSISTORS 40 W at 25C Case Temperature 1 A Continuous Collector Current 2 A Peak Collector Current 20 mJ Reverse-Energy Rating TO-220 PACKAGE (TOP VIEW) B 1 C 2 E 3 Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25C case temperature (unless otherwise noted) RATING SYMBOL Collector-base voltage (IE = 0) TIP49 Collector-emitter voltage (IB = 0) V CBO 400 450 TIP50 500 TIP47 250 TIP48 TIP49 UNIT 350 TIP47 TIP48 VALUE VCEO 300 350 V V 400 TIP50 VEBO 5 V IC 1 A ICM 2 A IB 0.6 A Continuous device dissipation at (or below) 25C case temperature (see Note 2) Ptot 40 W Continuous device dissipation at (or below) 25C free air temperature (see Note 3) Ptot 2 W 1/2LIC2 20 mJ C Emitter-base voltage Continuous collector current Peak collector current (see Note 1) Continuous base current Unclamped inductive load energy (see Note 4) Operating junction temperature range Storage temperature range Lead temperature 3.2 mm from case for 10 seconds NOTE 1: 2. 3. 4. Tj -65 to +150 Tstg -65 to +150 C TL 260 C This value applies for tp 1 ms, duty cycle 2%. Derate linearly to 150C case temperature at the rate of 0.32 W/C. Derate linearly to 150C free air temperature at the rate of 16 mW/C. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = 0.4 A, RBE = 100 , VBE(off) = 0, RS = 0.1 , VCC = 20 V. DECEMBER 1971 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 1 TIP47, TIP48, TIP49, TIP50 NPN SILICON POWER TRANSISTORS electrical characteristics at 25C case temperature PARAMETER V(BR)CEO ICES ICEO IEBO hFE V CE(sat) VBE hfe |hfe | Collector-emitter breakdown voltage TEST CONDITIONS IC = 30 mA MIN IB = 0 (see Note 5) TIP47 250 TIP48 300 TIP49 350 TIP50 400 TYP MAX UNIT V VCE = 350 V VBE = 0 TIP47 1 Collector-emitter VCE = 400 V VBE = 0 TIP48 1 cut-off current VCE = 450 V VBE = 0 TIP49 1 mA VCE = 500 V VBE = 0 TIP50 1 VCE = 150 V IB = 0 TIP47 1 Collector cut-off VCE = 200 V IB = 0 TIP48 1 current VCE = 250 V IB = 0 TIP49 1 VCE = 300 V IB = 0 TIP50 1 VEB = 5V IC = 0 Forward current VCE = 10 V IC = 0.3 A transfer ratio VCE = 10 V IC = 1A IB = 0.2 A IC = 1A (see Notes 5 and 6) 1 V VCE = 10 V IC = 1A (see Notes 5 and 6) 1.5 V VCE = 10 V IC = 0.2 A f = 1 kHz 25 VCE = 10 V IC = 0.2 A f = 2 MHz 5 MAX UNIT Emitter cut-off current Collector-emitter saturation voltage Base-emitter voltage Small signal forward current transfer ratio Small signal forward current transfer ratio mA 1 30 (see Notes 5 and 6) mA 150 10 NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 s, duty cycle 2%. 6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. resistive-load-switching characteristics at 25C case temperature PARAMETER TEST CONDITIONS MIN ton Turn on time IC = 1 A IB(on) = 0.1 A IB(off) = -0.1 A toff Turn off time VBE(off) = -5 V RL = 200 (see Figures 1 and 2) 0.2 s 2 s Voltage and current values shown are nominal; exact values vary slightly with transistor parameters. 2 TYP DECEMBER 1971 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. TIP47, TIP48, TIP49, TIP50 NPN SILICON POWER TRANSISTORS PARAMETER MEASUREMENT INFORMATION +25 V BD135 680 F 120 T V1 100 100 F 47 tp V cc V=CC250 V TUT 15 V1 100 680 F 82 BD136 tp = 20 s Duty cycle = 1% V1 = 15 V, Source Impedance = 50 Figure 1. Resistive-Load Switching Test Circuit C 90% 90% E IC A - B = td B - C = tr B E - F = tf 10% 10% F 0% D - E = ts A - C = ton D - F = t off 90% D dIB 2 A/s dt IB I B(on) A 10% 0% I B(off) Figure 2. Resistive-Load Switching Waveforms DECEMBER 1971 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 3 TIP47, TIP48, TIP49, TIP50 NPN SILICON POWER TRANSISTORS TYPICAL CHARACTERISTICS TYPICAL DC CURRENT GAIN vs COLLECTOR CURRENT 40 TCP770AA VCE(sat) - Collector-Emitter Saturation Voltage - V hFE - Typical DC Current Gain 50 COLLECTOR-EMITTER SATURATION VOLTAGE vs COLLECTOR CURRENT VCE = 10 V TC = 25C tp = 300 s, duty cycle < 2% 30 20 10 0 0.01 0.1 0*3 TCP770AB IC / IB = 5 TC = 25C tp = 300 s, duty cycle < 2% 0*2 0*1 0 0*01 1 IC - Collector Current - A 0*1 1 IC - Collector Current - A Figure 3. Figure 4. BASE-EMITTER SATURATION VOLTAGE vs COLLECTOR CURRENT VBE(sat) - Base-Emitter Saturation Voltage - V 1.0 0.9 TCP770AC VCE = 10 V TC = 25C tp = 300 s, duty cycle < 2% 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 0*01 0*1 1*0 IC - Collector Current - A Figure 5. 4 DECEMBER 1971 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. TIP47, TIP48, TIP49, TIP50 NPN SILICON POWER TRANSISTORS MAXIMUM SAFE OPERATING REGIONS MAXIMUM FORWARD-BIAS SAFE OPERATING AREA IC - Collector Current - A 10 SAP770AA 1*0 0.1 tp = 100 s TIP47 TIP48 TIP49 TIP50 tp = 500 s tp = 1 ms DC Operation 0*01 1*0 10 100 1000 VCE - Collector-Emitter Voltage - V Figure 6. DECEMBER 1971 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 5