G E SOLID STATE 3875081 GE SOLID STATE 01 De 3875001 go1704e 2 i D1E 17092 D 7-29-23 Hign-speea rower Transistors File Number 34 Medium-Power Silicon N-P-N Planar Transistors For Small-Signal Applications In Industrial and Commercial Equipment Features: = For operation at junction temperature up to 200C s Planar construction for low noise and low leakage = Low output capacitance The RCA-2N1893 and 2N2405 are silicon n-p-n planar transistors intended for a variety of smali-signal and medium-power applications. They feature exceptionally high collector-to-emitter sustaining voltage, low leakage characteristics, high switching speeds, and high pulse beta (hee). RCA-2N2405 is a direct replacement for type 2N1893 for most applications. In addition, the 2N2405 has high voltage ratings, lower saturation voltages, and higher sustaining voltages than the 2N1893. The 2N1893 and 2N2405 are supplied in the TO-205AD package. . *Formerly Dev. Type TA2235A. 2N2405 Features: = Minimum gain-banowidth product (fr) of 120 MHz; useful in application from dc to 50 MHz High sustaining voltage: Vceo(sus) = 90 V min. a Low saturation voltages: Voe(sat) = 0.5 V max. at le = 150 MA Vee(Sat) = 1.7 V max. at ic = 150 MA MAXIMUM RATINGS, Absolute-Maximum Values: 2N1893, 2N2405 TERMINAL DESIGNATIONS E C (CASE) 9208-27512 JEDEC TO-205AD o 2N1893 2N2405 * COLLECTOR-TO-BASE VOLTAGE.......... cece cee cece cece eee n een eee et een ne nens Veeo 120 120 Vv * COLLECTOR-TO-EMITTER SUSTAINING VOLTAGE: With external base-to-emitter resistance (Ree) S10... . ce cece eee tee teen ecennee Veer 100 140 v With base open ....... cece ec eect ence ee teen eteneneesenes 80 90 v * EMITTER-TO-BASE VOLTAGE ......ccccsceceeseereeeeereees 7 7 Vv * COLLECTOR CURRENT ... ce esse ccc case n cern een e ences ee seen eee snneeteeetoennsenes 0.5 1 A * TRANSISTOR DISSIPATION: At case temperature up to 25C 2.0. c ee cee eee eee reer eet ee ee eeneees 3 5 Ww At free-air temperatures up to 25C 0.8 1 Ww At temperatures above 25C .......... 2.020. e cece ee eee eee See Figs 1 & 2 * TEMPERATURE RANGE: Storage and operating (JUNCTION) 1.0.0.6... 0. cece cece cece eect eenceeencenereees -65 to +200 c * LEAD TEMPERATURE (Ouring soldering): At distance from seating plane for 10 s max. 2 1/16 in. (1.58 mm) for 2N1893 and 2 1/32 in. (0.8 MM) for ANZ405 0... cece cece cece cere eran een esneneeeerees To 255 t PS * In accordance with JEDEC registration data format (JS-9 RDF-2). 95 0635 C-14 G E SOLID STATE 3875081 GE SOLID STATE High Speed Power Transistors 2N1893, Oh DE 3875081 0017093 W oie 17093 op T29*LS 2N2405 ELECTRICAL CHARACTERISTICS, Case Temperature (To) = 25C Unless Otherwise Specified TEST CONDITIONS LIMITS cHaracteristic | VOLTAGE | CURRENT | piigog 2N2405 UNITS Vde mA dc Vos VceE le le Ip Min.) Max. Min.]| Max * | 0.01 | 0.01 IcBo 90 0 0 uA To = 150C 90 0 | 15 -{ 10 *| lego Vae=-SV 0 - | 001 | 0.01 pA 1008 o| - - Ch *! Vceolsus) 308 o | ao] - go} - V VeoerR (sus) * = = _ Rpe= 102 1008 100 140 v Ree = 5002 100? -| - 120] - * VIBR}CBO 0.1 0 120 - 120 - Vig R)EBO 0101 7 - 7 - 1508 is | -|5 - | 05 *| Vce(satl 508 5|- 115 | 02 v 1504 is | - | 13 - {4a *) Veelsat) 508 5 | - | 09 - | 09 v * 10 | 150 40] 120 60} 200 *) hee 10} 108 35| - 35] - * 10 | 0.1 20) - -~} - #| Te = 55C 10 | 10 20] - 20, - Ne *] f= 1kHz 5] 1 30} 100 -| - * 1 kHz 5| 5 -| - 50 | 275 * 1 kHz io} 5 a5{ _| - * 20 MHz 10 | 50 25] - 6} - *! hip 5 1 20) 30 24\ 34 a f= 1kHz 10 5 4 8 4 8 *l heb 5 1 [125x104 - |3x 104 f=1kHz 10 5 |1.5x104] |3x 104 *lh 5 1 | 06 | 05 lob . f=1kHz 10 5 | 05 | 05 umho *) Cobo 10 0 | 15 | 15 pF *lCip Vge>0.5 V 0 - | 85 | 80 pF NF RG = 500 Q BW = 15 kHz f= 1 kHz 10 0.3 - _ 6 dB *IR | 583 | 35 6J-C cAV Resa - |} 219 | 175 8 Pulsed. Pulse duration = 300 usec max.; duty factor <2%. * In accordance with JEDEC registration data format (JS-9 RDF-2}. 0636 D-O01 G E SOLID STATE Ob de psa7scen 0017094 & T 3875081 GE SOLID STATE G1iE 17094 DT "4722 High-Speed Power Transistors 2N1893, 2N2405 le PULSE OPERATION MUST BE CERATED LINEARLY WITH INCREASE IN TEMPERATURE) * FOR SINGLE NON- REPETITIVE PULSE COLLECTOR CURRENT (1) mA Vceo MAX.290V 1 2 4 6 BIO 2 4 6 8 100 2 a COLLECTOR: TO-EMITTER VOLTAGE (VceEV 92C$-IS736R1 Fig. 1 Maximum operating areas for type 2N24085, a AMBIENT TEMPERATURE MAXIMUM TRANSISTOR DISSIPATION WATTS COLLECTOR CURRENT (Ic) mA =75 $0 =25 0 25 50 75 100 128 ISO 176 200 TEMPERATURE *C 928-15738 BASE-TO-EMITTER VOLTAGE (Vgel nat, : . 92C5-IN8SR2 Fig. 2 Dissipation derating curves for types Fig. 3 Typical transfer characteristics for 2N1893, and 2N2405. types 2N1893 and 2N2405, TEMPERATURE (Tals 25 TLS Z AACTION TEMPERATURE (*e cs -10T0R COLLECTOR-TO-EMITTER VOLTS (Vee) 20S 1660 92S -10 2 Fig. 4 Typical! cutoff characteristics for Fig. Typical gain bandwidth product character- types 2N1893 and 2N2405. istics for types 2N1893 and 2N2405. 97 0637 B-02 G E SOLID STATE Cl 3875081 GE SOLID STATE High-Speed Power Transistors DE 3075081 OOL?U4S & i oie 17095 DBD TZIZSD 2N1893, 2N2405 CURRENT (Z)=0 CURRENT (Z_)*0 AIR TEMPERATURE OUTPUT CAPACITANCE FOR i E | 3 3 COLLECTOR MILLIAMPERES (Ic) REVERSE-BIAS VOLTS (Vge OR Yop? sacs 9s Fig. 6 Typical capacitance characteristics for types 2N1893 and 2N2405. COMMOHEMITTER CIRCUIT, BASE . FREE-AIR TEMPER SE INPUT, ATURE = 25 COLLECTOR MILLIAMPERES (Ic) COLLECTOR MILLIAMPERES (Zp) Wee? S2CS-12076 Fig. 8- Typical collector characteristics at 26 C for type 2N1893. n COLLECTOR MILLIAMPERES () DC FORWARD-CURRENT TRANSFER RATIO (hre) wo COLLECTOR-TO-EMITTER VOLTS (cel Fig. 7 Typical collector characteristics at 25 C for type 2N2405. 9205-176 20 60 80 COLLECTOR-TO EMITTER VOLTS (Vee) 92c5 G47 Fig, 9- Typical collector characteristics at 25 C for type 2N2408. @ 1 20 30 40 $0 60 70 80 90 100 a : o (00 p00 COLLECTOR-TO-EMITTER VOLTS (Voge) 925 685 COLLECTOR MILLIAMPERES (ZC) 9209-11846 Fig. 10 Typical collector characteristics at Fig. 11 Typical de-beta characteristics for types 25 C for type 2N1893. 2N1893 and 2N2405. G E SOLID STATE 3875081 GE SOLID STATE COMMON-EMITTER CIRCUIT, BASE INPUT FREQUENCY (Hcl * 20 ~ FREE -AIR TEMPERATURE (T asec SMALLSIGNAL FORWARDCURRENT TRANSFER RATIO (hey) 4 66 466 COLLECTOR MILLIAMPERES (Ic) 82Cs 11655 ! Fig. 12 ~ Typical small-signal beta characteristics . for types 2N1893 and 2N2405. o a BASE-TO-EMITTER SATURATION a VOLTAGE [Ve (not) VOLTS FREE-AI| TEMPERATURE (Teg) *C secs 6S! Fig, 14 Typical saturation characteristics for types 2N2405 and 2N1893. NOISE FIGURE {NF} b o o2 0.4 1 COLLECTOR MILLIAMPERES (Ic) 9208 t6S6 Fig. 16 Typical wide-band noise characteristic for type 2N2405. ol DE ff 3475081 o017054 o IT 1 17096 D - - B rign >peea Power Vander 2N1893, 2N2405 COLLECTOR 8 6 g 3 g d t 2 : > z g 5 & E = awl in f Z g FREE-AIR TEMPERATURE (Trg) "C ACE 82 Fig. 12 Typical saturation characteristics for types 2N1893 and 2N24085. SUSTAINING AND My, 4 8 gu So Se COLLECTOR-TO-EMITTER VOLTS (Vogt oO = o a $ 2 468' 2 468 ,,2 468 t 0 10? os? #98 EXTERNAL SASE-TO- EMITTER RESISTANCE {Fgg)' ore 48 92S 1656R3 Fig, 18 Sustaining voltage characteristic for type 2N2405. tOVOLTS BANDWITH CIRCUIT (CPS)= ~AIR TEMPERATURE (Tra)= 25 C NOISE FIGURE [NF } db 10 10? 10 1o* 108 REFERENCE-SIGNAL FREQUENCYCPS 92CS 1657 Fig. 17 Typical narrow-band noise characteristic for type 2N2408, 99 0639 D-04