THYRISTOR 222A RMS 12001600 Volts CIRCUIT PAT K2 G2 PAT10012 PAT10016 PAH10012 PAH10016 PAH 1 3 3 1 K1 G1 K1 G1 OUTLINE DRAWING Dimensionmm Maximum Ratings Parameter Repetitive Peak Off-State Voltage Non Repetitive Peak Off-State Voltage Parameter RMS On-State Current Surge On-State Current I Squared t Critical Rate of Rise of Turned-On Current Peak Gate Power Average Gate Power Peak Gate Current Peak Gate Voltage Peak Gate Reverse Voltage Operating Junction Temperature Range Storage Temperature Range Isolation Voltage Mounting Mounting Torque Terminal Grade Grade Symbol PAT10012/PAH10012 PAT10016/PAH10016 Unit VDRM 1200 1600 V VDSM 1300 1700 V Symbol ITRMS ITSM I2t di/dt Conditions 180 Tc76 Half Sine Wave 50Hz Half Sine Wave, 1Pulse, Non-Repetitive 10ms VD=2/3VDRMITM=ITRMSTj125 IG=200mAdiG/dt=0.2A/s Max. Rated Value Unit 222 A 2000 A 20000 A2s 100 A/s PGM 5 W P G AV 1 W IGM 2 A VGM 10 V VRGM 5 V Tjw -40125 Tstg -40125 2500 V M6 2.43.5 Nm M5 2.42.8 Nm Viso F -AC Terminal to Base, ACmin. Greased 230 Value Per 1 Arm. Electrical Characteristics Parameter Peak Off-State Current Peak On-State Voltage Gate Current to Trigger Gate Voltage to Trigger Gate Non-Trigger Voltage Critical Rate of Rise of Off-State Voltage Turn-Off Time Turn-On Time Delay Time Rise Time Latching Current Holding Current 1 Thermal Resistance 1 Thermal Resistance Symbol IDM Tj=125VDM=VDRM VTM Tj=25ITM=300A IGT VGT Maximum Value Min. Typ. Max. Conditions VD=6VIT=1A VD=6VIT=1A Unit 40 mA 1.38 V Tj=-40 200 mA Tj= 25 100 mA Tj= 125 50 mA Tj=-40 4 V Tj= 25 2.5 V Tj= 125 2 V VGD Tj=125VD=2/3VDRM 0.25 V dv/dt Tj=125VD=2/3VDRM 500 V/s tq Tj=125ITM=ITRMSVD=2/3VDRM dv/dt=20V/s VR=100V -di/dt=20A/s tgt td Tj=25ITM=IT RMSVD=100V IG=200mAdiG/dt=0.2A/s tr 100 s 6 s 2 s 4 s IL Tj=25 100 mA IH Tj=25 50 mA Rthj-c Rthc-f - Junction to Case, Total - Case to Fin, Total, Greased ...155g Approximate Weight 0.175 /W 0.1 /W Value Per 1 Arm. 1 Value Per Module. 231 232