PD - 94047A RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5) IRHNJ597130 100V, P-CHANNEL 4# TECHNOLOGY c Product Summary Part Number Radiation Level IRHNJ597130 100K Rads (Si) IRHNJ593130 300K Rads (Si) RDS(on) ID 0.205 -12.5A 0.205 -12.5A SMD-0.5 International Rectifier's R5TM technology provides high performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters. Features: n n n n n n n n n n Single Event Effect (SEE) Hardened Ultra Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Ceramic Package Light Weight Absolute Maximum Ratings Pre-Irradiation Parameter ID @ VGS = -12V, TC = 25C ID @ VGS = -12V, TC = 100C IDM PD @ TC = 25C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction Storage Temperature Range Pckg. Mounting Surface Temp. Weight Units -12.5 -8.0 -50 75 0.6 20 96 -12.5 7.5 -6.2 -55 to 150 A W W/C V mJ A mJ V/ns o 300 ( for 5s ) 1.0 ( Typical ) C g For footnotes refer to the last page www.irf.com 1 10/01/01 IRHNJ597130 Pre-Irradiation Electrical Characteristics @ Tj = 25C (Unless Otherwise Specified) Min Typ Max Units -- -- V -0.12 -- V/C -- 0.205 -- -- -- -- -4.0 -- -10 -25 V S( ) Test Conditions VGS = 0V, ID = -1.0mA Reference to 25C, ID = -1.0mA VGS = -12V, ID = -8.0A VDS = VGS, ID = -1.0mA VDS > -15V, IDS = -8.0A VDS= -80V ,VGS=0V VDS = -80V, VGS = 0V, TJ = 125C VGS = -20V VGS = 20V VGS =-12V, ID = -12.5A VDS = -50V Parameter BVDSS Drain-to-Source Breakdown Voltage -100 BV DSS/T J Temperature Coefficient of Breakdown -- Voltage RDS(on) Static Drain-to-Source On-State -- Resistance VGS(th) Gate Threshold Voltage -2.0 gfs Forward Transconductance 6.8 IDSS Zero Gate Voltage Drain Current -- -- A IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- 4.0 -100 100 45 16 11 28 78 35 125 -- Ciss C oss C rss Input Capacitance Output Capacitance Reverse Transfer Capacitance -- -- -- 1372 326 20 -- -- -- nA nC VDD = -50V, ID = -12.5A, VGS =-12V, RG = 7.5 ns nH Measured from the center of drain pad to center of source pad pF VGS = 0V, VDS = -25V f = 1.0MHz Source-Drain Diode Ratings and Characteristics Parameter Min Typ Max Units IS ISM VSD t rr Q RR Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge ton Forward Turn-On Time -- -- -- -- -- -- -- -- -- -- -12.5 -50 -5.0 191 778 Test Conditions A V ns nC Tj = 25C, IS = -12.5A, VGS = 0V Tj = 25C, IF =-12.5A, di/dt -100A/s VDD -50V Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. Thermal Resistance Parameter RthJC RthJ-PCB Junction-to-Case Junction-to-PC board Min Typ Max Units -- -- -- 6.9 1.67 -- C/W Test Conditions soldered to a 2" square copper-clad board Note: Corresponding Spice and Saber models are available on the G&S Website. For footnotes refer to the last page 2 www.irf.com Radiation Characteristics Pre-Irradiation IRHNJ597130 International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. Table 1. Electrical Characteristics @ Tj = 25C, Post Total Dose Irradiation Parameter BVDSS VGS(th) IGSS IGSS IDSS RDS(on) RDS(on) VSD 100K Rads(Si)1 Min Max Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source On-State Resistance (TO-3) Static Drain-to-Source On-State Resistance (SMD-0.5) Diode Forward Voltage 300KRads(Si)2 Min Max Units Test Conditions V -100 -2.0 -- -- -- -- -- -4.0 -100 100 -10 0.205 -100 -2.0 -- -- -- -- -- -5.0 -100 100 -10 0.205 nA A VGS = 0V, ID = -1.0mA VGS = VDS, ID = -1.0mA VGS =-20V VGS = 20 V VDS=-80V, VGS =0V VGS = -12V, ID =-8.0A -- 0.205 -- 0.205 VGS = -12V, ID =-8.0A -- -5.0 -- -5.0 V VGS = 0V, IS = -12.5A 1. Part number IRHNJ597130 2. Part number IRHNJ593130 International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2. Table 2. Single Event Effect Safe Operating Area Ion Br I Au LET (MeV/(mg/cm2)) 37.9 59.7 82.3 VDS (V) Range (m) @VGS=0V @VGS=5V @VGS=10V @VGS=15V @VGS=17.5V @VGS=20V 33.1 -100 -100 -100 -100 -100 -100 30.5 -100 -100 -100 -100 -75 -25 28.4 -100 -100 -100 -30 -- -- Energy (MeV) 252.6 314 350 -120 -100 VDS -80 Br -60 I Au -40 -20 0 0 5 10 15 20 25 VGS Fig a. Single Event Effect, Safe Operating Area For footnotes refer to the last page www.irf.com 3 IRHNJ597130 100 Pre-Irradiation 100 VGS -15V -12V -10V -9.0V -8.0V -7.0V -6.0V BOTTOM -5.0V -I D , Drain-to-Source Current (A) -I D , Drain-to-Source Current (A) 10 -5.0V 20s PULSE WIDTH T = 25 C 1 10 -5.0V 10 100 TJ = 150 C 10 15 V DS = -25V 20s PULSE WIDTH 8 9 10 11 -VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics 4 R DS(on) , Drain-to-Source On Resistance (Normalized) -I D , Drain-to-Source Current (A) 2.5 TJ = 25 C 7 10 100 Fig 2. Typical Output Characteristics 100 6 1 -VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 5 J 1 0.1 -VDS , Drain-to-Source Voltage (V) 1 20s PULSE WIDTH T = 150 C J 1 0.1 VGS -15V -12V -10V -9.0V -8.0V -7.0V -6.0V BOTTOM -5.0V TOP TOP ID = -12.5A 2.0 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = -12V 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature( C) Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com Pre-Irradiation VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd 1600 Ciss 1200 Coss 800 400 20 -VGS , Gate-to-Source Voltage (V) 2000 C, Capacitance (pF) IRHNJ597130 ID = -12.5A VDS = -80V VDS = -50V VDS = -20V 16 12 8 4 Crss 0 1 10 FOR TEST CIRCUIT SEE FIGURE 13 0 100 0 10 -VDS , Drain-to-Source Voltage (V) 30 40 Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 100 1000 -I D, Drain-to-Source Current (A) -ISD , Reverse Drain Current (A) 20 QG , Total Gate Charge (nC) OPERATION IN THIS AREA LIMITED BY R DS(on) 100 10 TJ = 150 C TJ = 25 C 1 V GS = 0 V 0.1 0.0 1.0 2.0 3.0 4.0 -VSD ,Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage www.irf.com 5.0 10 1ms 1 10ms Tc = 25C Tj = 150C Single Pulse 0.1 1 10 100 1000 -VDS , Drain-toSource Voltage (V) Fig 8. Maximum Safe Operating Area 5 IRHNJ597130 Pre-Irradiation 14 VGS 12 D.U.T. RG - 10 V DD + VGS 8 Pulse Width 1 s Duty Factor 0.1 % 6 Fig 10a. Switching Time Test Circuit 4 VDS 2 90% 0 25 50 75 100 125 150 TC , Case Temperature ( C) 10% VGS Fig 9. Maximum Drain Current Vs. Case Temperature td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms 10 Thermal Response (Z thJC ) -ID , Drain Current (A) RD V DS 1 D = 0.50 0.20 0.10 PDM 0.05 0.1 0.02 0.01 0.01 0.00001 SINGLE PULSE (THERMAL RESPONSE) t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 6 www.irf.com Pre-Irradiation IRHNJ597130 L - D .U .T RG + IA S VGS -20V VVDD DD A D R IV E R 0.01 tp 200 15V Fig 12a. Unclamped Inductive Test Circuit IAS EAS , Single Pulse Avalanche Energy (mJ) VDS ID -5.6A -8.0A BOTTOM -12.5A TOP 160 120 80 40 0 25 50 75 100 125 150 Starting TJ , Junction Temperature ( C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current tp V (BR)DSS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. QG 50K -12V 12V .2F .3F -12 V QGS QGD D.U.T. +VDS VGS VG -3mA Charge Fig 13a. Basic Gate Charge Waveform www.irf.com IG ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit 7 IRHNJ597130 Pre-Irradiation Footnotes: Repetitive Rating; Pulse width limited by maximum junction temperature. VDD = -25V, starting TJ = 25C, L=1.2 mH Peak IL = -12.5A, VGS = -12V ISD -12.5A, di/dt -320A/s, VDD -100V, TJ 150C Pulse width 300 s; Duty Cycle 2% Total Dose Irradiation with VGS Bias. -12 volt VGS applied and VDS = 0 during irradiation per MIL-STD-750, method 1019, condition A. Total Dose Irradiation with VDS Bias. -80 volt VDS applied and VGS = 0 during irradiation per MlL-STD-750, method 1019, condition A. Case Outline and Dimensions -- SMD-0.5 PAD ASSIGNMENTS IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 10/01 8 www.irf.com International Rectifier Company Information Contact Us Employment International Rectifier Home Page IR High Reliability Home Page PART SEARCH sloganbar.jpg - 4491 Bytes New Products QIRL In addition to its wide range of qualified JANS products International Rectifier announces "QIRL." Products that are Rad tested, where applicable, fully compliant with all screening and QCI Space level requirements.Lead times are from 2-16 weeks. QIRL specifications are managed and controlled by IR's Documentation Management Group. gradation2.jpg 1811Same Electrical, mechanical, test requirements as JANS QPL. Wafers from a JANS fab, produced and Bytestested on a JANS line. QIRL Part Number Nomenclature PRODUCT TYPE FRED DRIVER DRIVER DRIVER DRIVER DRIVER DRIVER DRIVER DRIVER DRIVER DRIVER POWER MOSFET POWER MOSFET POWER MOSFET POWER MOSFET POWER MOSFET POWER MOSFET POWER MOSFET DIE PACKAGE PART REVISION SCREENING * Also available SIZE TYPE NUMBER NUMBER LEVELS for standard MOSFETS, N/A TO-254AA HFA35HB60CSCV 0 TXV Schottkys, and N/A MO038AB IR2130DSCB 0 B Control ICs 18-PIN N/A IR2110E4SCS 3 S Related LCC Information: 18-PIN International N/A IR2113E6SCB 0 B LCC Rectifier New N/A MO036AB IR2110L4SCS 2 S QIRL Program Provides N/A MO036AB IR213L6SCB 0 B Standardized 18-PIN N/A IR2110E4SCB 1 B Rad-Hard LCC Components for N/A M0-036AB IR2110L4SCB 2 B Space N/A MO-036AA IR2125ZSCB 3 B Applications ...more N/A MO-036AB RIC7113L4SCB 1 B N/A MO036AA IR2125ZSCS 0 S Contact your 1 SMD-1 IRF5N5210SCX 0 TX 3 SMD-0.5 IRFNJ9130CSCV 0 TXV 3 SMD-0.5 IRFNJ9130CSCX IR TX 3 SMD-0.5 IRFNJ9230CSCV IR TXV 3 SMD-0.5 IRFNJ9230CSCX IR TX IRFE130SCX 2 TX IRFE130SCV 3 TXV 3 3 18-PIN LCC 18-PIN LCC file:///G|/imaging/BITTING/mail_pdf/International Rectifier.htm (1 of 9) [11/2/2001 1:36:48 PM] local sales representative for more information. International Rectifier POWER MOSFET POWER MOSFET POWER MOSFET POWER MOSFET POWER MOSFET POWER MOSFET POWER MOSFET POWER MOSFET POWER MOSFET POWER MOSFET POWER MOSFET POWER MOSFET POWER MOSFET POWER MOSFET POWER MOSFET POWER MOSFET POWER MOSFET POWER MOSFET POWER MOSFET POWER MOSFET POWER MOSFET POWER MOSFET POWER MOSFET POWER MOSFET POWER MOSFET 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 2 2 2 2 2 2 18-PIN LCC 18-PIN LCC 18-PIN LCC 18-PIN LCC 18-PIN LCC 18-PIN LCC 18-PIN LCC 18-PIN LCC 18-PIN LCC 18-PIN LCC 18-PIN LCC 18-PIN LCC 18-PIN LCC 18-PIN LCC 18-PIN LCC 18-PIN LCC 18-PIN LCC 18-PIN LCC 18-PIN LCC 18-PIN LCC 18-PIN LCC 18-PIN LCC IRFE130SCS 0 S IRFE230SCX 2 TX IRFE230SCV 2 TXV IRFE230SCS 0 S IRFE9130SCX 2 TX IRFE9130SCV 3 TXV IRFE130SCS 1 S IRFE9230SCX 2 TX IRFE9230SCV 2 TXV IRFE9230SCS 1 S IRFE330SCX 2 TX IRFE330SCV 2 TXV IRFE330SCS 0 S IRFE430SCX 2 TX IRFE430SCV 2 TXV IRFE430SCS 0 S IRFE9120SCX 2 TX IRFE9120SCV 2 TXV IRFE9120SCS 1 S IRFE9220SCX 2 TX IRFE9220SCV 2 TXV IRFE9220SCS 1 S 2 TO-257AA IRFY220CSCX 0 TX 2 TO-257AA IRFY220CMSCX 1 TX 3 TO-257AA IRFY9230CMSCX 0 TX file:///G|/imaging/BITTING/mail_pdf/International Rectifier.htm (2 of 9) [11/2/2001 1:36:48 PM] International Rectifier POWER MOSFET POWER MOSFET POWER MOSFET POWER MOSFET POWER MOSFET POWER MOSFET POWER MOSFET POWER MOSFET POWER MOSFET POWER MOSFET POWER MOSFET POWER MOSFET POWER MOSFET POWER MOSFET POWER MOSFET POWER MOSFET POWER MOSFET POWER MOSFET POWER MOSFET POWER MOSFET POWER MOSFET POWER MOSFET POWER MOSFET POWER MOSFET POWER MOSFET 3 TO-257AA IRFY9130CSCS 0 S 3 TO-257AA IRFY230CMSCX 0 TX 3 TO-257AA IRFY230CSCX 0 TX 3 TO-257AA IRFY9230CSCX 0 TX 4 TO-257AA IRFY440CMSCX 0 TX 4 TO-257AA IRFY9140CSCS 3 S 4 TO-257AA IRFY240CSCX 5 TX 4 TO-257AA IRFY340SCX 4 TX 4 TO-257AA IRFY9240CMSCX 0 TX 4 TO-257AA IRFY140CMSCS 1 S 4 TO-257AA IRFY140CSCS 0 S 4 TO-257AA IRFY044CSCS 1 S 4 TO-257AA IRFY440CSCX 2 TX 3 TO-257AA IRFY9130CSCX 2 TX 3 TO-257AA IRFY9130CSCV 1 TXV 4 TO-257AA IRFY9140CSCX 2 TX 4 TO-257AA IRFY9140CSCV 3 TXV 4 TO-257AA IRFY140CSCX 5 TX 4 TO-257AA IRFY044CSCV 2 TXV 4 TO-257AA IRFY044CSCX 0 TX 4 TO-257AA IRFY140CSCV 2 TXV 4 TO-257AA IRFY240CSCV 3 TXV 4 TO-257AA IRFY340CSCV 2 TXV 4 TO-257AA IRFY440CSCV 3 TXV 4 TO-257AA IRFY240CSCV 3 TXV file:///G|/imaging/BITTING/mail_pdf/International Rectifier.htm (3 of 9) [11/2/2001 1:36:48 PM] International Rectifier POWER MOSFET POWER MOSFET POWER MOSFET POWER MOSFET POWER MOSFET POWER MOSFET POWER MOSFET POWER MOSFET POWER MOSFET POWER MOSFET RADHARD MOSFET RADHARD MOSFET RADHARD MOSFET RADHARD MOSFET RADHARD MOSFET RADHARD MOSFET RADHARD MOSFET RADHARD MOSFET RADHARD MOSFET RADHARD MOSFET RADHARD MOSFET RADHARD MOSFET RADHARD MOSFET RADHARD MOSFET RADHARD MOSFET 4 TO-257AA IRFY440CMSCS IR S 4 TO-257AA IRFY140CMSCX 1 TX 4 TO-257AA IRFY9140CMSCX 1 TX 4 TO-257AA IRFY9240SCV 0 TXV 4 TO-257AA IRFY240SCV 0 TXV 3 TO-257AA IRFY130CMSCX 0 TX 6 TO-254AA IRFM064CSCS 0 S 4 TO-257AA IRFY240CSCS 0 S 4 TO-257AA IRFY240CMSCX 0 TX 3 TO-257AA IRFY430CSCX 0 TX 1 MO036AB IRHG9110SCS 3 S 1 MO036AB IRHG7110SCS 5 S 1 MO036AB IRHG6110SCS 8 S 1 MO-036AB IRHG567110SCS 2 S 1 MO-036AB IRHG57110SCS 0 S IRHE9130SCS 3 S IRHE57130SCS 1 S IRHE57230SCS IR S IRHE597034SCS IR S IRHE597130SCS IR S IRHE597230SCS IR S IRHE57Z30SCS 0 S IRHE57034SCS 0 S IRHE9230SCS 2 S IRHE9110SCS 2 S 3 3 3 3 3 3 3 3 3 1 18-PIN LCC 18-PIN LCC 18-PIN LCC 18-PIN LCC 18-PIN LCC 18-PIN LCC 18-PIN LCC 18-PIN LCC 18-PIN LCC 18-PIN LCC file:///G|/imaging/BITTING/mail_pdf/International Rectifier.htm (4 of 9) [11/2/2001 1:36:48 PM] International Rectifier RADHARD MOSFET RADHARD MOSFET RADHARD MOSFET RADHARD MOSFET RADHARD MOSFET RADHARD MOSFET RADHARD MOSFET RADHARD MOSFET RADHARD MOSFET RADHARD MOSFET RADHARD MOSFET RADHARD MOSFET RADHARD MOSFET RADHARD MOSFET RADHARD MOSFET RADHARD MOSFET RADHARD MOSFET RADHARD MOSFET RADHARD MOSFET RADHARD MOSFET RADHARD MOSFET RADHARD MOSFET RADHARD MOSFET RADHARD MOSFET RADHARD MOSFET 1 1 1 28-PIN LCC 28-PIN LCC 28-PIN LCC IRHQ57113SESCS 2 S IRHQ57214SESCS 2 S IRHQ567110SCS 3 S 1 TO-39 IRHF7110SCS 1 S 1 TO-39 IRHF7110SCV 2 TXV 3 TO-39 IRHF57034SCS 3 S 3 TO-39 IRHF57130SCS 6 S 3 TO-39 IRHF57230SCS 0 S 3 TO-39 IRHF57Z30SCS 3 S 3 TO-39 IRHF57230SESCS 1 S 3 TO-39 IRHF7330SESCS 2 S 3 TO-39 IRHF57Z30SCS 3 S 3 TO-39 IRHF597034SCS IR S 3 TO-39 IRHF597230SCS IR S 3 TO-39 IRHF597Z30SCS IR S 5 SMD-0.5 IRHNJ57Z30SCS 7 S 3 SMD-0.5 IRHNJ57230SCS 1 S 3 SMD-0.5 IRHNJ57130SCS 5 S 3 SMD-0.5 IRHNJ57034SCS 4 S 3 SMD-0.5 IRHNJ57230SESCS 6 S 3 SMD-0.5 IRHNJ57234SESCS 3 S 3 SMD-0.5 IRHNJ597034SCS IR S 3 SMD-0.5 IRHNJ597130SCS IR S 3 SMD-0.5 IRHNJ597230SCS IR S 3 SMD-0.5 IRHNJ597Z30SCS IR S file:///G|/imaging/BITTING/mail_pdf/International Rectifier.htm (5 of 9) [11/2/2001 1:36:48 PM] International Rectifier RADHARD MOSFET RADHARD MOSFET RADHARD MOSFET RADHARD MOSFET RADHARD MOSFET RADHARD MOSFET RADHARD MOSFET RADHARD MOSFET RADHARD MOSFET RADHARD MOSFET RADHARD MOSFET RADHARD MOSFET RADHARD MOSFET RADHARD MOSFET RADHARD MOSFET RADHARD MOSFET RADHARD MOSFET RADHARD MOSFET RADHARD MOSFET RADHARD MOSFET RADHARD MOSFET RADHARD MOSFET RADHARD MOSFET RADHARD MOSFET RADHARD MOSFET 3 TO-39 IRHF7430SESCS 3 S 6 SMD-2 IRHNA57160SCS 6 S 6 SMD-2 IRHNA57Z60SCS 5 S 6 SMD-2 IRHNA57260SCS 4 S 6 SMD-2 IRHNA57064SCS 5 S 6 SMD-2 IRHNA57163SESCS 2 S 6 SMD-2 IRHNA57260SESCS 13 S 6 SMD-2 IRHNA7064SCS 1 S 5 SMD-1 IRHN7C50SECS 3 S 6 TO-254AA IRHM57260SCS 4 S 6 TO-254AA IRHM57160SCS 5 S 6 TO-254AA IRHM57064SCS 8 S 6 TO-254AA IRHM57Z60SCS 3 S 6 TO-254AA IRHM7064SCS 2 S 6 TO-254AA IRHM57260SESCS 9 S 6 TO-254AA IRHM7260SESCS 2 S 5 TO-254AA IRHM7C50SESCS 4 S 5 SMD-1 IRHN9150SCS 2 S 5 SMD-1 IRHN7450SCS 2 S 6 SMD-2 IRHNA7260SCS 3 S IRHE7130SCS 2 S IRHE7230SCS 2 S 3 3 18-PIN LCC 18-PIN LCC 5 TO-254AA IRHM9150SCS 2 S 5 TO-254AA IRHM9250SCS 3 S 6 TO-254AA IRHM7360SESCS 3 S file:///G|/imaging/BITTING/mail_pdf/International Rectifier.htm (6 of 9) [11/2/2001 1:36:48 PM] International Rectifier RADHARD MOSFET RADHARD MOSFET RADHARD MOSFET RADHARD MOSFET RADHARD MOSFET RADHARD MOSFET RADHARD MOSFET RADHARD MOSFET RADHARD MOSFET RADHARD MOSFET RADHARD MOSFET RADHARD MOSFET RADHARD MOSFET RADHARD MOSFET RADHARD MOSFET RADHARD MOSFET RADHARD MOSFET RADHARD MOSFET RADHARD MOSFET RADHARD MOSFET RADHARD MOSFET RADHARD MOSFET RADHARD MOSFET RADHARD MOSFET RADHARD MOSFET 6 TO-254AA IRHM7460SESCS 2 S 6 TO-254AA IRHM7264SESCS 3 S 3 TO-39 IRHF9230SCS 0 S 5 SMD-1 IRHN7250SCS 2 S 3 TO-257AA IRHY9130CMSCS 2 S 3 TO-257AA IRHY9230CMSCS 1 S 6 SMD-2 IRHNA9064SCS 2 S 6 TO-254AA IRHM9064SCS 2 S 6 TO-254AA IRHM9160SCS 0 S 6 TO-254AA IRHM7260SESCS 2 S 6 TO-254AA IRHM597Z60SCS 0 S 6 SMD-2 IRHNA57Z60SCS 8 S 6 SMD-2 IRHNA57064SCS 7 S 6 SMD-2 IRHNA57264SESCS 1 S 6 TO-254AA IRHM57264SESCS IR S 6 TO-254AA IRHM597064SCS IR S 6 SMD-2 IRHNA597064SCS IR S 6 TO-254AA IRHM597160SCS IR S 6 SMD-2 IRHNA597160SCS IR S 6 TO-254AA IRHM597260SCS IR S 6 SMD-2 IRHNA597260SCS IR S 6 SMD-2 IRHNA7260SESCS 0 S 6 SMD-2 IRHNA57064SCV 1 TXV 6 SMD-2 IRHNA57160SCV 3 TXV 3 SMD-0.5 IRHNJ7330SESCS 2 S file:///G|/imaging/BITTING/mail_pdf/International Rectifier.htm (7 of 9) [11/2/2001 1:36:48 PM] International Rectifier RADHARD MOSFET RADHARD MOSFET RADHARD MOSFET RADHARD MOSFET RADHARD MOSFET RADHARD MOSFET RADHARD MOSFET RADHARD MOSFET RADHARD MOSFET RADHARD MOSFET RADHARD MOSFET RADHARD MOSFET RADHARD MOSFET RADHARD MOSFET SCHOTTKY SCHOTTKY SCHOTTKY SCHOTTKY SCHOTTKY SCHOTTKY SCHOTTKY SCHOTTKY SCHOTTKY SCHOTTKY SCHOTTKY SCHOTTKY SCHOTTKY SCHOTTKY SCHOTTKY SCHOTTKY SCHOTTKY SCHOTTKY SCHOTTKY SCHOTTKY SCHOTTKY 6 SMD-2 IRHNA7360SESCS 3 S 3 TO-257AA IRHY7434CSESCS 4 S 3 SMD-0.5 IRHNJ9130SCS 4 S 3 SMD-0.5 IRHNJ7430SESCS 3 S 3 SMD-0.5 IRHNJ9230SCS 0 S 5 SMD-1 IRHN57250SESCS 2 S 3 TO-254AA IRHM57230SESCS IR S 3 18-PIN LCC IRHE7430SESCS 1 S 5 TO-3 IRH7150SCS 0 S 5 TO-3 IRH7250SCS IR S 3 TO-257AA IRHY7G30CMSESCV 1 TXV 6 TO-254AA IRHM57160SCV 0 TXV 3 TO-257AA IRHY57034CMSCS 0 S 3 SMD-0.5 IRHNJ59130SCS IR S 60 125 125 125 125 125 125 125 125 125 125 125 125 125 125 150 150 200 150 150 150 SMD-0.5 TO-257AA SMD-1 TO-254AA TO-254AA TO-254AA TO-254AA TO-254AA TO-254AA SMD-1 TO-254AA TO-254AA SMD-1 TO-254AA SMD-0.5 TO-254AA TO-254AA TO-254AA TO-254AA TO-254AA TO-254AA 8CLJQ045SCV 10YQ045CSCS 12CLQ150SCS 12CGQ150SCS 12CGQ150SCX 12CGQ150SCV 15CGQ100SCX 15CGQ100SCV 15CGQ100SCS 15CLQ100SCV 15JGQ100SCS 15JGQ100SCX 15CLQ100SCS 15CGQ100SCS 15LJQ100SCV 22CGQ045SCS 22JGQ045SCS 22GQ100SCS 22CGQ045SCX 22CGQ045SCV 22JGQ045SCX 1 IR 0 5 0 1 2 5 6 3 3 0 3 6 0 3 1 1 3 2 0 TXV S S S TX TXV TX TXV S TXV S TX S S TXV S S S TX TXV TX file:///G|/imaging/BITTING/mail_pdf/International Rectifier.htm (8 of 9) [11/2/2001 1:36:48 PM] International Rectifier SCHOTTKY SCHOTTKY SCHOTTKY SCHOTTKY SCHOTTKY SCHOTTKY SCHOTTKY SCHOTTKY SCHOTTKY SCHOTTKY SCHOTTKY SCHOTTKY SCHOTTKY SCHOTTKY SCHOTTKY Location: China Japan 150 200 200 200 70 70 150 200 200 200 200 200 200 150 150 TO-254AA 22JGQ045SCV TO-254AA 22GQ100SCV TO-254AA 25GQ045SCS TO-254AA 25GQ045SCV SMD-0.5 30SLJQ045SCV SMD-0.5 30CLJQ100SCS SMD-1 35CLQ045SCS SMD-1 60LQ045SCS SMD-1 60LQ045SCX SMD-1 60LQ045SCV SMD-1 60LQ100SCX SMD-1 60LQ100SCV SMD-1 60LQ100SCS TO-258 60CKQ045SCV TO-258 60CKQ045SCX Privacy Statement file:///G|/imaging/BITTING/mail_pdf/International Rectifier.htm (9 of 9) [11/2/2001 1:36:48 PM] 0 1 0 0 0 0 1 5 2 0 0 0 2 IR 0 TXV TXV S TXV TXV S S S TX TXV TX TXV S TXV TX (c) Copyright 2001 International Rectifier