Absolute Maximum Ratings
Parameter Units
ID @ VGS = -12V, TC = 25°C Continuous Drain Current -12.5
ID @ VGS = -12V, TC = 100°C Continuous Drain Current -8.0
IDM Pulsed Drain Current ➀-50
PD @ TC = 25°C Max. Power Dissipation 75 W
Linear Derating Factor 0.6 W/°C
VGS Gate-to-Source Voltage ±20 V
EAS Single Pulse Avalanche Energy ➁96 mJ
IAR Avalanche Current ➀-12.5 A
EAR Repetitive Avalanche Energy ➀7.5 mJ
dv/dt Peak Diode Recovery dv/dt ➂-6.2 V/ns
TJOperating Junction -55 to 150
TSTG Storage Temperature Range
Pckg. Mounting Surface Temp. 300 ( for 5s )
Weight 1.0 ( Typical ) g
Pre-Irradiation
International Rectifier’s R5TM technology provides
high performance power MOSFETs for space appli-
cations. These devices have been characterized for
Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm2)). The combination
of low RDS(on) and low gate charge reduces the power
losses in switching applications such as DC to DC
converters and motor control. These devices retain
all of the well established advantages of MOSFETs
such as voltage control, fast switching, ease of paral-
leling and temperature stability of electrical param-
eters.
oC
A
RADIATION HARDENED
IRHNJ597130
POWER MOSFET
SURFACE MOUNT (SMD-0.5)
10/01/01
www.irf.com 1
100V, P-CHANNEL
c
TECHNOLOGY
Features:
nSingle Event Effect (SEE) Hardened
nUltra Low RDS(on)
nLow Total Gate Charge
nProton Tolerant
nSimple Drive Requirements
nEase of Paralleling
nHermetically Sealed
nSurface Mount
nCeramic Package
nLight Weight
For footnotes refer to the last page
44
#
SMD-0.5
Product Summary
Part Number Radiation Level RDS(on) ID
IRHNJ597130 100K Rads (Si) 0.205Ω -12.5A
IRHNJ593130 300K Rads (Si) 0.205Ω -12.5A
PD - 94047A
IRHNJ597130 Pre-Irradiation
2www.irf.com
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter Min Typ Max Units T est Conditions
BVDSS Drain-to-Source Breakdown Voltage -100 — — V VGS = 0V, ID = -1.0mA
∆BVDSS/∆TJTemperature Coefficient of Breakdown — -0.12 — V/°C Reference to 25°C, ID = -1.0mA
Voltage
RDS(on) Static Drain-to-Source On-State — — 0.205 ΩVGS = -12V, ID = -8.0A
Resistance
VGS(th) Gate Threshold Voltage -2.0 — -4.0 V VDS = VGS, ID = -1.0mA
gfs Forward Transconductance 6.8 — — S ( )V
DS > -15V, IDS = -8.0A ➃
IDSS Zero Gate Voltage Drain Current — — -10 VDS= -80V ,VGS=0V
— — -25 VDS = -80V,
VGS = 0V, TJ = 125°C
IGSS Gate-to-Source Leakage Forward — — -100 VGS = -20V
IGSS Gate-to-Source Leakage Reverse — — 100 VGS = 20V
QgTotal Gate Charge — — 45 VGS =-12V, ID = -12.5A
Qgs Gate-to-Source Charge — — 16 nC VDS = -50V
Qgd Gate-to-Drain (‘Miller’) Charge — — 11
td(on) Turn-On Delay Time — — 28 VDD = -50V, ID = -12.5A,
trRise Time — — 78 VGS =-12V, RG = 7.5Ω
td(off) Turn-Off Delay Time — — 35
tfFall Time — — 125
LS + LDTotal Inductance — 4.0 —
Ciss Input Capacitance — 1372 — VGS = 0V, VDS = -25V
Coss Output Capacitance — 326 — p F f = 1.0MHz
Crss Reverse Transfer Capacitance — 20 —
nA
Ω
➃
nH
ns
µA
Thermal Resistance
Parameter Min Typ Max Units T est Conditions
RthJC Junction-to-Case — — 1.67
RthJ-PCB Junction-to-PC board — 6.9 — soldered to a 2” square copper-clad board
°C/W
Measured from the center of
drain pad to center of source pad
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
Source-Drain Diode Ratings and Characteristics
Parameter Min Typ Max Units T est Conditions
ISContinuous Source Current (Body Diode) — — -12.5
ISM Pulse Source Current (Body Diode) ➀— — -50
VSD Diode Forward Voltage — — -5.0 V Tj = 25°C, IS = -12.5A, VGS = 0V ➃
trr Reverse Recovery Time — — 191 ns Tj = 25°C, IF =-12.5A, di/dt ≤ -100A/µs
QRR Reverse Recovery Charge — — 778 nC VDD ≤ -50V ➃
ton Forward Turn-On Time Intrinsic tur n-on time is negligible. Tur n-on speed is substantially controlled by LS + LD.
A
www.irf.com 3
Pre-Irradiation IRHNJ597130
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufactur ing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Radiation Characteristics
1. Part number IRHNJ597130
2. Part number IRHNJ593130
Fig a. Single Event Effect, Safe Operating Area
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects character ization is illustrated in Fig. a and Table 2.
T able 2. Single Event Effect Safe Operating Area
For footnotes refer to the last page
I on L E T Energy Range VDS (V)
(MeV/(mg/cm2)) (MeV) (µm) @VGS=0V @VGS=5V @VGS=10V @VGS=15V @VGS=17.5V
B r 37.9 252.6 33.1 -100 -100 -100 -100 -100
I 59.7 314 30.5 -100 -100 -100 -100 -75
Au 82.3 350 28.4 -100 -100 -100 -30 —
-100
-25
—
@VGS=20V
T able 1. Electrical Characteristics @ Tj = 25°C, Post T otal Dose Irradiation ➄➅
Parameter 100K Rads(Si)1 300KRads(Si)2
Units
Test Conditions
Min Max Min Max
BVDSS Drain-to-Source Breakdown Voltage -100 — -100 — V VGS = 0V, ID = -1.0mA
VGS(th) Gate Threshold Voltage -2.0 -4.0 -2.0 -5.0 VGS = VDS, ID = -1.0mA
IGSS Gate-to-Source Leakage Forward — -100 — -100 nA VGS =-20V
IGSS Gate-to-Source Leakage Reverse — 100 — 100 VGS = 20 V
IDSS Zero Gate Voltage Drain Current — -10 — -10 µA VDS=-80V, VGS =0V
RDS(on) Static Drain-to-Source ➃ — 0.205 — 0. 205 Ω VGS = -12V, ID =-8.0A
On-State Resistance (TO-3)
RDS(on) Static Drain-to-Source ➃ — 0.205 — 0.205 Ω VGS = -12V, ID =-8.0A
On-State Resistance (SMD-0.5)
VSD Diode Forward Voltage ➃ — -5.0 — -5.0 V VGS = 0V, IS = -12.5A
-120
-100
-80
-60
-40
-20
00 5 10 15 20 25
VGS
VDS
Br
I
Au
IRHNJ597130 Pre-Irradiation
4www.irf.com
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
15
1
10
100
0.1 1 10 100
20µs PULSE WIDTH
T = 25 C
J°
TOP
BOTTOM
VGS
-15V
-12V
-10V
-9.0V
-8.0V
-7.0V
-6.0V
-5.0V
-V , Drain-to-Source Voltage (V)
-I , Drain-to-Source Current (A)
DS
D
-5.0V
1
10
100
0.1 1 10 100
20µs PULSE WIDTH
T = 150 C
J°
TOP
BOTTOM
VGS
-15V
-12V
-10V
-9.0V
-8.0V
-7.0V
-6.0V
-5.0V
-V , Drain-to-Source Voltage (V)
-I , Drain-to-Source Current (A)
DS
D
-5.0V
1
10
100
5678910 11
V = -25V
20µs PULSE WIDTH
DS
-V , Gate-to-Source Voltage (V)
-I , Drain-to-Source Current (A)
GS
D
T = 25 C
J°
T = 150 C
J°
-60 -40 -20 020 40 60 80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
2.5
T , Junction Temperature( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
°
V =
I =
GS
D
-12V
-12.5A
www.irf.com 5
Pre-Irradiation IRHNJ597130
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
1 10 100
0
400
800
1200
1600
2000
-V , Drain-to-Source Voltage (V)
C, Capacitance (pF)
DS
V
C
C
C
=
=
=
=
0V,
C
C
C
f = 1MHz
+ C
+ C
C SHORTED
GS
iss gs gd , ds
rss gd
oss ds gd
Crss
Coss
Ciss
010 20 30 40
0
4
8
12
16
20
Q , Total Gate Charge (nC)
-V , Gate-to-Source Voltage (V)
G
GS
FOR TEST CIRCUIT
SEE FIGURE
I =
D
13
-12.5A
V =-20V
DS
V =-50V
DS
V =-80V
DS
0.1
1
10
100
0.0 1.0 2.0 3.0 4.0 5.0
-V ,Source-to-Drain Voltage (V)
-I , Reverse Drain Current (A)
SD
SD
V = 0 V
GS
T = 150 C
J°
T = 25 C
J°
1 10 100 1000
-VDS , Drain-toSource Voltage (V)
0.1
1
10
100
1000
-ID, Drain-to-Source Current (A)
Tc = 25°C
Tj = 150°C
Single Pulse
1ms
10ms
OPERATION IN THIS AREA
LIMITED BY RDS(on)
IRHNJ597130 Pre-Irradiation
6www.irf.com
Fig 10b. Switching Time Waveforms
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9. Maximum Drain Current Vs.
Case Temperature
25 50 75 100 125 150
0
2
4
6
8
10
12
14
T , Case Temperature ( C)
-I , Drain
C
urrent
(
A
)
°
C
D
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1
Notes:
1. Duty factor D = t / t
2. Peak T =P x Z + T
1 2
JDM thJC C
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response (Z )
1
thJC
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
Fig 10a. Switching Time Test Circuit
VDS
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
RD
VGS
VDD
RGD.U.T.
+
-
V
DS
90%
10%
V
GS t
d(on)
t
r
t
d(off)
t
f
www.irf.com 7
Pre-Irradiation IRHNJ597130
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Fig 12b. Unclamped Inductive Waveforms
Fig 12a. Unclamped Inductive Test Circuit
25 50 75 100 125 150
0
40
80
120
160
200
Starting T , Junction Temperature( C)
E , Single Pulse Avalanche Energy (mJ)
J
AS
°
ID
TOP
BOTTOM
-5.6A
-8.0A
-12.5A
tpV
(
BR
)
DSS
I
AS
QG
QGS QGD
VG
Charge
-12 V
D.U.T. VDS
ID
IG
-3mA
VGS
.3µF
50KΩ
.2µF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
-12V
R
G
I
AS
0.01
Ω
t
p
D.U.T
L
V
DS
V
DD
DRIVER A
15V
-20V
VGS
VDD
+
-
IRHNJ597130 Pre-Irradiation
8www.irf.com
➃ Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
➄ Total Dose Irradiation with VGS Bias.
-12 volt VGS applied and VDS = 0 during
irradiation per MIL-STD-750, method 1019, condition A.
➅ Total Dose Irradiation with VDS Bias.
-80 volt VDS applied and VGS = 0 during
irradiation per MlL-STD-750, method 1019, condition A.
➀ Repetitive Rating; Pulse width limited by
maximum junction temperature.
➁ VDD = -25V, star ting TJ = 25°C, L=1.2 mH
Peak IL = -12.5A, VGS = -12V
➂ ISD ≤ -12.5A, di/dt ≤ -320A/µs,
VDD ≤ -100V, TJ ≤ 150°C
Footnotes:
Case Outline and Dimensions — SMD-0.5
P AD ASSIGNMENTS
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 10/01
International Rectifier
Home Page
IR High Reliability Home
Page
Company Information Contact Us Employment
PART SEARCH
sloganbar.jpg - 4491 Bytes
gradation2.jpg
-
1811
Bytes
New Products
QIRL
In addition to its wide range of qualified JANS products International Rectifier announces "QIRL."
Products that are Rad tested, where applicable, fully compliant with all screening and QCI Space level
requirements.Lead times are from 2-16 weeks. QIRL specifications are managed and controlled by IR's
Documentation Management Group.
Same Electrical, mechanical, test requirements as JANS QPL. Wafers from a JANS fab, produced and
tested on a JANS line.
QIRL Part Number
Nomenclature
PRODUCT
TYPE DIE
SIZE PACKAGE
TYPE PART
NUMBER REVISION
NUMBER SCREENING
LEVELS
FRED N/A TO-254AA HFA35HB60CSCV 0 TXV
DRIVER N/A MO038AB IR2130DSCB 0 B
DRIVER N/A 18-PIN
LCC IR2110E4SCS 3 S
DRIVER N/A 18-PIN
LCC IR2113E6SCB 0 B
DRIVER N/A MO036AB IR2110L4SCS 2 S
DRIVER N/A MO036AB IR213L6SCB 0 B
DRIVER N/A 18-PIN
LCC IR2110E4SCB 1 B
DRIVER N/A M0-036AB IR2110L4SCB 2 B
DRIVER N/A MO-036AA IR2125ZSCB 3 B
DRIVER N/A MO-036AB RIC7113L4SCB 1 B
DRIVER N/A MO036AA IR2125ZSCS 0 S
POWER
MOSFET 1 SMD-1 IRF5N5210SCX 0 TX
POWER
MOSFET 3 SMD-0.5 IRFNJ9130CSCV 0 TXV
POWER
MOSFET 3 SMD-0.5 IRFNJ9130CSCX IR TX
POWER
MOSFET 3 SMD-0.5 IRFNJ9230CSCV IR TXV
POWER
MOSFET 3 SMD-0.5 IRFNJ9230CSCX IR TX
POWER
MOSFET 318-PIN
LCC IRFE130SCX 2 TX
POWER
MOSFET 318-PIN
LCC IRFE130SCV 3 TXV
* Also available
for standard
MOSFETS,
Schottkys, and
Control ICs
Related
Information:
International
Rectifier New
QIRL Program
Provides
Standardized
Rad-Hard
Components for
Space
Applications
...more
Contact your
local sales
representative
for more
information.
International Rectifier
file:///G|/imaging/BITTING/mail_pdf/International Rectifier.htm (1 of 9) [11/2/2001 1:36:48 PM]
POWER
MOSFET 318-PIN
LCC IRFE130SCS 0 S
POWER
MOSFET 318-PIN
LCC IRFE230SCX 2 TX
POWER
MOSFET 318-PIN
LCC IRFE230SCV 2 TXV
POWER
MOSFET 318-PIN
LCC IRFE230SCS 0 S
POWER
MOSFET 318-PIN
LCC IRFE9130SCX 2 TX
POWER
MOSFET 318-PIN
LCC IRFE9130SCV 3 TXV
POWER
MOSFET 318-PIN
LCC IRFE130SCS 1 S
POWER
MOSFET 318-PIN
LCC IRFE9230SCX 2 TX
POWER
MOSFET 318-PIN
LCC IRFE9230SCV 2 TXV
POWER
MOSFET 318-PIN
LCC IRFE9230SCS 1 S
POWER
MOSFET 318-PIN
LCC IRFE330SCX 2 TX
POWER
MOSFET 318-PIN
LCC IRFE330SCV 2 TXV
POWER
MOSFET 318-PIN
LCC IRFE330SCS 0 S
POWER
MOSFET 318-PIN
LCC IRFE430SCX 2 TX
POWER
MOSFET 318-PIN
LCC IRFE430SCV 2 TXV
POWER
MOSFET 318-PIN
LCC IRFE430SCS 0 S
POWER
MOSFET 218-PIN
LCC IRFE9120SCX 2 TX
POWER
MOSFET 218-PIN
LCC IRFE9120SCV 2 TXV
POWER
MOSFET 218-PIN
LCC IRFE9120SCS 1 S
POWER
MOSFET 218-PIN
LCC IRFE9220SCX 2 TX
POWER
MOSFET 218-PIN
LCC IRFE9220SCV 2 TXV
POWER
MOSFET 218-PIN
LCC IRFE9220SCS 1 S
POWER
MOSFET 2 TO-257AA IRFY220CSCX 0 TX
POWER
MOSFET 2 TO-257AA IRFY220CMSCX 1 TX
POWER
MOSFET 3 TO-257AA IRFY9230CMSCX 0 TX
International Rectifier
file:///G|/imaging/BITTING/mail_pdf/International Rectifier.htm (2 of 9) [11/2/2001 1:36:48 PM]
POWER
MOSFET 3 TO-257AA IRFY9130CSCS 0 S
POWER
MOSFET 3 TO-257AA IRFY230CMSCX 0 TX
POWER
MOSFET 3 TO-257AA IRFY230CSCX 0 TX
POWER
MOSFET 3 TO-257AA IRFY9230CSCX 0 TX
POWER
MOSFET 4 TO-257AA IRFY440CMSCX 0 TX
POWER
MOSFET 4 TO-257AA IRFY9140CSCS 3 S
POWER
MOSFET 4 TO-257AA IRFY240CSCX 5 TX
POWER
MOSFET 4 TO-257AA IRFY340SCX 4 TX
POWER
MOSFET 4 TO-257AA IRFY9240CMSCX 0 TX
POWER
MOSFET 4 TO-257AA IRFY140CMSCS 1 S
POWER
MOSFET 4 TO-257AA IRFY140CSCS 0 S
POWER
MOSFET 4 TO-257AA IRFY044CSCS 1 S
POWER
MOSFET 4 TO-257AA IRFY440CSCX 2 TX
POWER
MOSFET 3 TO-257AA IRFY9130CSCX 2 TX
POWER
MOSFET 3 TO-257AA IRFY9130CSCV 1 TXV
POWER
MOSFET 4 TO-257AA IRFY9140CSCX 2 TX
POWER
MOSFET 4 TO-257AA IRFY9140CSCV 3 TXV
POWER
MOSFET 4 TO-257AA IRFY140CSCX 5 TX
POWER
MOSFET 4 TO-257AA IRFY044CSCV 2 TXV
POWER
MOSFET 4 TO-257AA IRFY044CSCX 0 TX
POWER
MOSFET 4 TO-257AA IRFY140CSCV 2 TXV
POWER
MOSFET 4 TO-257AA IRFY240CSCV 3 TXV
POWER
MOSFET 4 TO-257AA IRFY340CSCV 2 TXV
POWER
MOSFET 4 TO-257AA IRFY440CSCV 3 TXV
POWER
MOSFET 4 TO-257AA IRFY240CSCV 3 TXV
International Rectifier
file:///G|/imaging/BITTING/mail_pdf/International Rectifier.htm (3 of 9) [11/2/2001 1:36:48 PM]
POWER
MOSFET 4 TO-257AA IRFY440CMSCS IR S
POWER
MOSFET 4 TO-257AA IRFY140CMSCX 1 TX
POWER
MOSFET 4 TO-257AA IRFY9140CMSCX 1 TX
POWER
MOSFET 4 TO-257AA IRFY9240SCV 0 TXV
POWER
MOSFET 4 TO-257AA IRFY240SCV 0 TXV
POWER
MOSFET 3 TO-257AA IRFY130CMSCX 0 TX
POWER
MOSFET 6 TO-254AA IRFM064CSCS 0 S
POWER
MOSFET 4 TO-257AA IRFY240CSCS 0 S
POWER
MOSFET 4 TO-257AA IRFY240CMSCX 0 TX
POWER
MOSFET 3 TO-257AA IRFY430CSCX 0 TX
RADHARD
MOSFET 1 MO036AB IRHG9110SCS 3 S
RADHARD
MOSFET 1 MO036AB IRHG7110SCS 5 S
RADHARD
MOSFET 1 MO036AB IRHG6110SCS 8 S
RADHARD
MOSFET 1 MO-036AB IRHG567110SCS 2 S
RADHARD
MOSFET 1 MO-036AB IRHG57110SCS 0 S
RADHARD
MOSFET 318-PIN
LCC IRHE9130SCS 3 S
RADHARD
MOSFET 318-PIN
LCC IRHE57130SCS 1 S
RADHARD
MOSFET 318-PIN
LCC IRHE57230SCS IR S
RADHARD
MOSFET 318-PIN
LCC IRHE597034SCS IR S
RADHARD
MOSFET 318-PIN
LCC IRHE597130SCS IR S
RADHARD
MOSFET 318-PIN
LCC IRHE597230SCS IR S
RADHARD
MOSFET 318-PIN
LCC IRHE57Z30SCS 0 S
RADHARD
MOSFET 318-PIN
LCC IRHE57034SCS 0 S
RADHARD
MOSFET 318-PIN
LCC IRHE9230SCS 2 S
RADHARD
MOSFET 118-PIN
LCC IRHE9110SCS 2 S
International Rectifier
file:///G|/imaging/BITTING/mail_pdf/International Rectifier.htm (4 of 9) [11/2/2001 1:36:48 PM]
RADHARD
MOSFET 128-PIN
LCC IRHQ57113SESCS 2 S
RADHARD
MOSFET 128-PIN
LCC IRHQ57214SESCS 2 S
RADHARD
MOSFET 128-PIN
LCC IRHQ567110SCS 3 S
RADHARD
MOSFET 1 TO-39 IRHF7110SCS 1 S
RADHARD
MOSFET 1 TO-39 IRHF7110SCV 2 TXV
RADHARD
MOSFET 3 TO-39 IRHF57034SCS 3 S
RADHARD
MOSFET 3 TO-39 IRHF57130SCS 6 S
RADHARD
MOSFET 3 TO-39 IRHF57230SCS 0 S
RADHARD
MOSFET 3 TO-39 IRHF57Z30SCS 3 S
RADHARD
MOSFET 3 TO-39 IRHF57230SESCS 1 S
RADHARD
MOSFET 3 TO-39 IRHF7330SESCS 2 S
RADHARD
MOSFET 3 TO-39 IRHF57Z30SCS 3 S
RADHARD
MOSFET 3 TO-39 IRHF597034SCS IR S
RADHARD
MOSFET 3 TO-39 IRHF597230SCS IR S
RADHARD
MOSFET 3 TO-39 IRHF597Z30SCS IR S
RADHARD
MOSFET 5 SMD-0.5 IRHNJ57Z30SCS 7 S
RADHARD
MOSFET 3 SMD-0.5 IRHNJ57230SCS 1 S
RADHARD
MOSFET 3 SMD-0.5 IRHNJ57130SCS 5 S
RADHARD
MOSFET 3 SMD-0.5 IRHNJ57034SCS 4 S
RADHARD
MOSFET 3 SMD-0.5 IRHNJ57230SESCS 6 S
RADHARD
MOSFET 3 SMD-0.5 IRHNJ57234SESCS 3 S
RADHARD
MOSFET 3 SMD-0.5 IRHNJ597034SCS IR S
RADHARD
MOSFET 3 SMD-0.5 IRHNJ597130SCS IR S
RADHARD
MOSFET 3 SMD-0.5 IRHNJ597230SCS IR S
RADHARD
MOSFET 3 SMD-0.5 IRHNJ597Z30SCS IR S
International Rectifier
file:///G|/imaging/BITTING/mail_pdf/International Rectifier.htm (5 of 9) [11/2/2001 1:36:48 PM]
RADHARD
MOSFET 3 TO-39 IRHF7430SESCS 3 S
RADHARD
MOSFET 6 SMD-2 IRHNA57160SCS 6 S
RADHARD
MOSFET 6 SMD-2 IRHNA57Z60SCS 5 S
RADHARD
MOSFET 6 SMD-2 IRHNA57260SCS 4 S
RADHARD
MOSFET 6 SMD-2 IRHNA57064SCS 5 S
RADHARD
MOSFET 6 SMD-2 IRHNA57163SESCS 2 S
RADHARD
MOSFET 6 SMD-2 IRHNA57260SESCS 13 S
RADHARD
MOSFET 6 SMD-2 IRHNA7064SCS 1 S
RADHARD
MOSFET 5 SMD-1 IRHN7C50SECS 3 S
RADHARD
MOSFET 6 TO-254AA IRHM57260SCS 4 S
RADHARD
MOSFET 6 TO-254AA IRHM57160SCS 5 S
RADHARD
MOSFET 6 TO-254AA IRHM57064SCS 8 S
RADHARD
MOSFET 6 TO-254AA IRHM57Z60SCS 3 S
RADHARD
MOSFET 6 TO-254AA IRHM7064SCS 2 S
RADHARD
MOSFET 6 TO-254AA IRHM57260SESCS 9 S
RADHARD
MOSFET 6 TO-254AA IRHM7260SESCS 2 S
RADHARD
MOSFET 5 TO-254AA IRHM7C50SESCS 4 S
RADHARD
MOSFET 5 SMD-1 IRHN9150SCS 2 S
RADHARD
MOSFET 5 SMD-1 IRHN7450SCS 2 S
RADHARD
MOSFET 6 SMD-2 IRHNA7260SCS 3 S
RADHARD
MOSFET 318-PIN
LCC IRHE7130SCS 2 S
RADHARD
MOSFET 318-PIN
LCC IRHE7230SCS 2 S
RADHARD
MOSFET 5 TO-254AA IRHM9150SCS 2 S
RADHARD
MOSFET 5 TO-254AA IRHM9250SCS 3 S
RADHARD
MOSFET 6 TO-254AA IRHM7360SESCS 3 S
International Rectifier
file:///G|/imaging/BITTING/mail_pdf/International Rectifier.htm (6 of 9) [11/2/2001 1:36:48 PM]
RADHARD
MOSFET 6 TO-254AA IRHM7460SESCS 2 S
RADHARD
MOSFET 6 TO-254AA IRHM7264SESCS 3 S
RADHARD
MOSFET 3 TO-39 IRHF9230SCS 0 S
RADHARD
MOSFET 5 SMD-1 IRHN7250SCS 2 S
RADHARD
MOSFET 3 TO-257AA IRHY9130CMSCS 2 S
RADHARD
MOSFET 3 TO-257AA IRHY9230CMSCS 1 S
RADHARD
MOSFET 6 SMD-2 IRHNA9064SCS 2 S
RADHARD
MOSFET 6 TO-254AA IRHM9064SCS 2 S
RADHARD
MOSFET 6 TO-254AA IRHM9160SCS 0 S
RADHARD
MOSFET 6 TO-254AA IRHM7260SESCS 2 S
RADHARD
MOSFET 6 TO-254AA IRHM597Z60SCS 0 S
RADHARD
MOSFET 6 SMD-2 IRHNA57Z60SCS 8 S
RADHARD
MOSFET 6 SMD-2 IRHNA57064SCS 7 S
RADHARD
MOSFET 6 SMD-2 IRHNA57264SESCS 1 S
RADHARD
MOSFET 6 TO-254AA IRHM57264SESCS IR S
RADHARD
MOSFET 6 TO-254AA IRHM597064SCS IR S
RADHARD
MOSFET 6 SMD-2 IRHNA597064SCS IR S
RADHARD
MOSFET 6 TO-254AA IRHM597160SCS IR S
RADHARD
MOSFET 6 SMD-2 IRHNA597160SCS IR S
RADHARD
MOSFET 6 TO-254AA IRHM597260SCS IR S
RADHARD
MOSFET 6 SMD-2 IRHNA597260SCS IR S
RADHARD
MOSFET 6 SMD-2 IRHNA7260SESCS 0 S
RADHARD
MOSFET 6 SMD-2 IRHNA57064SCV 1 TXV
RADHARD
MOSFET 6 SMD-2 IRHNA57160SCV 3 TXV
RADHARD
MOSFET 3 SMD-0.5 IRHNJ7330SESCS 2 S
International Rectifier
file:///G|/imaging/BITTING/mail_pdf/International Rectifier.htm (7 of 9) [11/2/2001 1:36:48 PM]
RADHARD
MOSFET 6 SMD-2 IRHNA7360SESCS 3 S
RADHARD
MOSFET 3 TO-257AA IRHY7434CSESCS 4 S
RADHARD
MOSFET 3 SMD-0.5 IRHNJ9130SCS 4 S
RADHARD
MOSFET 3 SMD-0.5 IRHNJ7430SESCS 3 S
RADHARD
MOSFET 3 SMD-0.5 IRHNJ9230SCS 0 S
RADHARD
MOSFET 5 SMD-1 IRHN57250SESCS 2 S
RADHARD
MOSFET 3 TO-254AA IRHM57230SESCS IR S
RADHARD
MOSFET 318-PIN
LCC IRHE7430SESCS 1 S
RADHARD
MOSFET 5 TO-3 IRH7150SCS 0 S
RADHARD
MOSFET 5 TO-3 IRH7250SCS IR S
RADHARD
MOSFET 3 TO-257AA IRHY7G30CMSESCV 1 TXV
RADHARD
MOSFET 6 TO-254AA IRHM57160SCV 0 TXV
RADHARD
MOSFET 3 TO-257AA IRHY57034CMSCS 0 S
RADHARD
MOSFET 3 SMD-0.5 IRHNJ59130SCS IR S
SCHOTTKY 60 SMD-0.5 8CLJQ045SCV 1 TXV
SCHOTTKY 125 TO-257AA 10YQ045CSCS IR S
SCHOTTKY 125 SMD-1 12CLQ150SCS 0 S
SCHOTTKY 125 TO-254AA 12CGQ150SCS 5 S
SCHOTTKY 125 TO-254AA 12CGQ150SCX 0 TX
SCHOTTKY 125 TO-254AA 12CGQ150SCV 1 TXV
SCHOTTKY 125 TO-254AA 15CGQ100SCX 2 TX
SCHOTTKY 125 TO-254AA 15CGQ100SCV 5 TXV
SCHOTTKY 125 TO-254AA 15CGQ100SCS 6 S
SCHOTTKY 125 SMD-1 15CLQ100SCV 3 TXV
SCHOTTKY 125 TO-254AA 15JGQ100SCS 3 S
SCHOTTKY 125 TO-254AA 15JGQ100SCX 0 TX
SCHOTTKY 125 SMD-1 15CLQ100SCS 3 S
SCHOTTKY 125 TO-254AA 15CGQ100SCS 6 S
SCHOTTKY 125 SMD-0.5 15LJQ100SCV 0 TXV
SCHOTTKY 150 TO-254AA 22CGQ045SCS 3 S
SCHOTTKY 150 TO-254AA 22JGQ045SCS 1 S
SCHOTTKY 200 TO-254AA 22GQ100SCS 1 S
SCHOTTKY 150 TO-254AA 22CGQ045SCX 3 TX
SCHOTTKY 150 TO-254AA 22CGQ045SCV 2 TXV
SCHOTTKY 150 TO-254AA 22JGQ045SCX 0 TX
International Rectifier
file:///G|/imaging/BITTING/mail_pdf/International Rectifier.htm (8 of 9) [11/2/2001 1:36:48 PM]
SCHOTTKY 150 TO-254AA 22JGQ045SCV 0 TXV
SCHOTTKY 200 TO-254AA 22GQ100SCV 1 TXV
SCHOTTKY 200 TO-254AA 25GQ045SCS 0 S
SCHOTTKY 200 TO-254AA 25GQ045SCV 0 TXV
SCHOTTKY 70 SMD-0.5 30SLJQ045SCV 0 TXV
SCHOTTKY 70 SMD-0.5 30CLJQ100SCS 0 S
SCHOTTKY 150 SMD-1 35CLQ045SCS 1 S
SCHOTTKY 200 SMD-1 60LQ045SCS 5 S
SCHOTTKY 200 SMD-1 60LQ045SCX 2 TX
SCHOTTKY 200 SMD-1 60LQ045SCV 0 TXV
SCHOTTKY 200 SMD-1 60LQ100SCX 0 TX
SCHOTTKY 200 SMD-1 60LQ100SCV 0 TXV
SCHOTTKY 200 SMD-1 60LQ100SCS 2 S
SCHOTTKY 150 TO-258 60CKQ045SCV IR TXV
SCHOTTKY 150 TO-258 60CKQ045SCX 0 TX
Location: China Japan Privacy Statement © Copyright 2001 International Rectifier
International Rectifier
file:///G|/imaging/BITTING/mail_pdf/International Rectifier.htm (9 of 9) [11/2/2001 1:36:48 PM]
