IRHNJ597130 Pre-Irradiation
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Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter Min Typ Max Units T est Conditions
BVDSS Drain-to-Source Breakdown Voltage -100 — — V VGS = 0V, ID = -1.0mA
∆BVDSS/∆TJTemperature Coefficient of Breakdown — -0.12 — V/°C Reference to 25°C, ID = -1.0mA
Voltage
RDS(on) Static Drain-to-Source On-State — — 0.205 ΩVGS = -12V, ID = -8.0A
Resistance
VGS(th) Gate Threshold Voltage -2.0 — -4.0 V VDS = VGS, ID = -1.0mA
gfs Forward Transconductance 6.8 — — S ( )V
DS > -15V, IDS = -8.0A ➃
IDSS Zero Gate Voltage Drain Current — — -10 VDS= -80V ,VGS=0V
— — -25 VDS = -80V,
VGS = 0V, TJ = 125°C
IGSS Gate-to-Source Leakage Forward — — -100 VGS = -20V
IGSS Gate-to-Source Leakage Reverse — — 100 VGS = 20V
QgTotal Gate Charge — — 45 VGS =-12V, ID = -12.5A
Qgs Gate-to-Source Charge — — 16 nC VDS = -50V
Qgd Gate-to-Drain (‘Miller’) Charge — — 11
td(on) Turn-On Delay Time — — 28 VDD = -50V, ID = -12.5A,
trRise Time — — 78 VGS =-12V, RG = 7.5Ω
td(off) Turn-Off Delay Time — — 35
tfFall Time — — 125
LS + LDTotal Inductance — 4.0 —
Ciss Input Capacitance — 1372 — VGS = 0V, VDS = -25V
Coss Output Capacitance — 326 — p F f = 1.0MHz
Crss Reverse Transfer Capacitance — 20 —
nA
Ω
➃
nH
ns
µA
Thermal Resistance
Parameter Min Typ Max Units T est Conditions
RthJC Junction-to-Case — — 1.67
RthJ-PCB Junction-to-PC board — 6.9 — soldered to a 2” square copper-clad board
°C/W
Measured from the center of
drain pad to center of source pad
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
Source-Drain Diode Ratings and Characteristics
Parameter Min Typ Max Units T est Conditions
ISContinuous Source Current (Body Diode) — — -12.5
ISM Pulse Source Current (Body Diode) ➀— — -50
VSD Diode Forward Voltage — — -5.0 V Tj = 25°C, IS = -12.5A, VGS = 0V ➃
trr Reverse Recovery Time — — 191 ns Tj = 25°C, IF =-12.5A, di/dt ≤ -100A/µs
QRR Reverse Recovery Charge — — 778 nC VDD ≤ -50V ➃
ton Forward Turn-On Time Intrinsic tur n-on time is negligible. Tur n-on speed is substantially controlled by LS + LD.
A