DESCRIPTION
The
μ
PC8211TK is a silicon germanium (SiGe) monolithic integrated circuit designed as a low noise amplifier for
GPS and mobile communications.
The package is 6-pin lead-less minimold, suitable for surface mount.
This IC is manufactured using our 50 GHz fmax UHS2 (Ultra High Speed Process) SiGe bipolar process.
FEATURES
V @ .PYT Bd 3.1 = FN :esion woL•CC = 3.0 V
G :niag hgiH•P = 18.5 dB TYP. @ VCC = 3.0 V
•Low current consumption : ICC = 3.5 mA TYP. @ VCC = 3.0 V
•Gain 1 dB compression output power : Po (1 dB) = −6.0 dBm @ VCC = 3.0 V
•Built-in power-save function
•High-density surface mounting : 6-pin lead-less minimold package (1.5 × 1.3 × 0.55 mm)
APPLICATION
•Low noise amplifier for GPS and mobile communications
ORDERING INFORMATION
Part Number Order Number Package Marking Supplying Form
μ
PC8211TK-E2
μ
PC8211TK-E2-A 6-pin lead-less minimold
(1511 PKG) (Pb-Free) Note
6G • Embossed tape 8 mm wide
• Pin 1, 6 face the perforation side of the tape
• Qty 5 kpcs/reel
Note With regards to terminal solder (the solder contains lead) plated products (conventionally plated), contact
your nearby sales office.
Remark To order evaluation samples, contact your nearby sales office.
Part number for sample order:
μ
PC8211TK-A
DATA SHEET
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
BIPOLAR ANALOG INTEGRATED CIRCUIT
μ
PC8211TK
SiGe LOW NOISE AMPLIFIER
FOR GPS/MOBILE COMMUNICATIONS
Document No. PU10426EJ04V0DS (4th edition)
Date Published January 2006 CP(K) The mark shows major revised points.
DISCONTINUED
PIN CONNECTIONS
Pin No. Pin Name
1 INPUT
2 GND
3 PS
4 OUTPUT
5 GND
6
5
4
(Bottom View)
1
2
3
1
2
3
(Top View)
6
5
4
6G
6 VCC
INTERNAL BLOCK DIAGRAM
INPUT 1
Bias
2
3
GND
PS
VCC
6
5
4
GND
OUTPUT
Data Sheet PU10426EJ04V0DS
2
μ
PC8211TK
DISCONTINUED
ABSOLUTE MAXIMUM RATINGS
tinU sgnitaR snoitidnoC tseT lobmyS retemaraP
V egatloV ylppuS CC TA = +25° V 0.4 C
Power-Saving Voltage VPS −0.3 to VCC +0.3 V
Power Dissipation of Package PD TA = +85°C Note 232 mW
Operating Ambient Temperature TA −40 to +85 °C
Storage Temperature Tstg −55 to +150 °C
P rewoP tupnI in mBd 01+
Note Mounted on double-side copper-clad 50 × 50 × 1.6 mm epoxy glass PWB
RECOMMENDED OPERATING RANGE
Parameter Symbol MIN. TYP. MAX. Unit
V egatloV ylppuS CC 2.7 3.0 3.3 V
Operating Ambient Temperature TA −25 +25 +85 °C
Operating Frequency Range fin − 1 575 − MHz
Data Sheet PU10426EJ04V0DS 3
μ
PC8211TK
DISCONTINUED
ELECTRICAL CHARACTERISTICS (TA = +25°C, VCC = 3.0 V, VPS = 3.0 V, fin = 1 575 MHz, unless
otherwise specified)
Parameter Symbol Test Conditions MIN. TYP. MAX. Unit
I tnerruC tiucriC CC Am 5.4 5.3 5.2 langiS oN
edoM gnivaS-rewoP tA − − 1
μ
A
G niaG rewoP P Bd 5.12 5.81 5.51
FN erugiF esioN − 1.3 1.5 dB
Input 3rd Order Distortion Intercept
Point
IIP3 − −12 − dBm
LR ssoL nruteR tupnI in 5.7 0.6 − dB
Output Return Loss RLout 5.41 01 − dB
LSI noitalosI − 33.5 − dB
Rising Voltage From Power-Saving
Mode
VPSon 2.2 − − V
Falling Voltage From Power-Saving
Mode
VPSoff − − 0.8 V
f talF ssentalF niaG RF = ± 2.5 MHz − − 0.5 dB
Gain 1 dB Compression Output
Power
PO (1 dB) − −6.0 − dBm
P rewoP tuptuO O Pin = −10 dBm −1.5 +2.0 − dBm
TEST CIRCUIT
82 pF
61
2
3
5
4
4.7 nH
1.3 pF
33 pF
V
PS
0.1 F
μ
8.2 nH
IN
OUT
0.1 F
μ
V
CC
High : ON
Low : OFF (Power-Save)
C3
C2
C1
L1 C4
750 Ω
R1
22 nH
L2
L3
C5
COMPONENTS OF TEST CIRCUIT FOR MEASURING ELECTRICAL CHARACTERISTICS
Symbol Form Rating Part Number Maker
C1, C4 Chip Capacitor 0.1
μ
F GRM36 Murata
C2 Chip Capacitor 1.3 pF GRM36 Murata
C3 Chip Capacitor 33 pF GRM36 Murata
C5 Chip Capacitor 82 pF GRM36 Murata
R1 Resistor 750 Ω RR0816 Susumu
L1 Inductor 4.7 nH TFL0510 Susumu
L2 Inductor 22 nH TFL0816 or TFL0510 Susumu
L3 Inductor 8.2 nH TFL0510 Susumu
Data Sheet PU10426EJ04V0DS
4
μ
PC8211TK
DISCONTINUED
ILLUSTRATION OF THE TEST CIRCUIT ASSEMBLED ON EVALUATION BOARD
PS
IN OUT
V
CC
33 pF
8.2 nH
82 pF
μ
0.1 F
4.7 nH
22 nH
0.1 F
μ
750 Ω
1
3
2
4
5
6
1.3 pF
Notes
1. 30 × 30 × 0.51 mm double-side copper-clad hydrocarbon ceramic woven
glass PWB (Rogers: R04003, εr = 3.38).
2. Back side: GND pattern
3. Au plated on pattern
4. represents cutout
5. : Through holes
Data Sheet PU10426EJ04V0DS 5
μ
PC8211TK
DISCONTINUED
TYPICAL CHARACTERISTICS (TA = +25°C, unless otherwise specified)
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
Noise Figure NF (dB)
NOISE FIGURE vs. FREQUENCY
1.5 1.55 1.6
24
22
20
18
16
14
Voltage Gain Gain (dB)
VOLTAGE GAIN vs. FREQUENCY
1.5 1.55 1.6
)zHG( f ycneuqerF )zHG( f ycneuqerF
30
10
–
10
–
30
–
50
–
70
–
90
–
50
–
40
–
30
–
20
–
10 0
25
15
5
–
5
–
15
–
25
–
35
Voltage Gain Gain (dB)
VOLTAGE GAIN vs. POWER-SAVE
PIN APPLIED VOLTAGE
0 1 2 3 4
Power-Save Pin Applied Voltage VPS (V)
Input Power
Pin (dBm)
VCC = VPS = 3.0 VVCC = VPS = 3.0 V
TA = +25˚C
TA =
–
40˚C
TA = +85˚C
TA = +25˚C
TA =
–
40˚C
TA = +85˚C
TA =
–
25˚C
TA = 85˚C
TA = 25˚C
VCC = 3.0 V
f = 1 575 MHz
VCC = VPS = 3.0 V
TA = 25˚C
–
50
–
40
–
30
–
20
–
10 0
30
10
–
10
–
30
–
50
–
70
–
90
OUTPUT POWER (2 tones), IM
3
vs. INPUT POWER
Input Power
Pin (dBm)
VCC = VPS = 3.0 V
TA =
–
40˚C
IM3
Pout
3rd Order Intermodulation Distortion IM3 (dBm)
Output Power (2 tones) Pout (dBm)
f1 = 1 575.5 MHz
f2 = 1 576.5 MHz
–
50
–
40
–
30
–
20
–
10 0
30
10
–
10
–
30
–
50
–
70
–
90
OUTPUT POWER (2 tones), IM
3
vs. INPUT POWER
OUTPUT POWER (2 tones), IM3
vs. INPUT POWER
Input Power
Pin (dBm)
VCC = VPS = 3.0 V
TA =
85
˚C
IM3
IM3
Pout
Pout
3rd Order Intermodulation Distortion IM3 (dBm)
Output Power (2 tones) Pout (dBm)
f1 = 1 575.5 MHz
f2 = 1 576.5 MHz
3rd Order Intermodulation Distortion IM3 (dBm)
Output Power (2 tones) Pout (dBm)
f1 = 1 575.5 MHz
f2 = 1 576.5 MHz
Remark The graphs indicate nominal characteristics.
Data Sheet PU10426EJ04V0DS
6
μ
PC8211TK
DISCONTINUED
S-PARAMETERS (TA = +25°C, VCC = VPS = 3.0 V, monitored at connector on board)
START 100.000 000 MHz STOP 2 000.000 000 MHz START 100.000 000 MHz STOP 2 000.000 000 MHz
1
1
Input Return Loss RL
in
(dB)
Frequency f (GHz)
1; 57.094 Ω 51.530 Ω 5.2072 nH
1.575 000 000 GHz
1; 31.739 Ω 3.4192 Ω 29.554 pF
1.575 000 000 GHz
S11 SYCNEUQERF- 22-FREQUENCY
–5
0
–10
–20
–25
–30
–35
Isolation ISL (dB)
Frequency f (GHz)
ISOLATION vs. FREQUENCY
–15
–40
–50
0.1 1.0 10
1.575 GHz
–45
Output Return Loss RL
out
(dB)
Frequency f (GHz)
OUTPUT RETURN LOSS vs. FREQUENCY
0
–5
–10
–15
–20
–25
0.1 1.0 10
1.575 GHz
Power Gain Gain (dB)
Frequency f (GHz)
POWER GAIN vs. FREQUENCY
25
20
15
10
5
0
0.1 1.0 10
1.575 GHz
0
–8
–10
INPUT RETURN LOSS vs. FREQUENCY
–4
–6
–2
–12
0.1 1.0 10
1.575 GHz
Remark The graphs indicate nominal characteristics.
Data Sheet PU10426EJ04V0DS 7
μ
PC8211TK
DISCONTINUED
PACKAGE DIMENSIONS
6-PIN LEAD-LESS MINIMOLD (1511 PKG) (UNIT: mm)
0.48±0.050.48±0.05
1.5±0.1
1.3±0.05
1.1±0.1
0.55±0.03
0.11+0.1
–0.05 0.16±0.05
0.9±0.10.2±0.1
(Bottom View)
(Top View)
Remark ( ) : Reference value
Data Sheet PU10426EJ04V0DS
8
μ
PC8211TK
DISCONTINUED
NOTES ON CORRECT USE
(1) Observe precautions for handling because of electro-static sensitive devices.
(2) Form a ground pattern as widely as possible to minimize ground impedance (to prevent undesired oscillation).
All the ground terminals must be connected together with wide ground pattern to decrease impedance
difference.
(3) The bypass capacitor should be attached to VCC line.
RECOMMENDED SOLDERING CONDITIONS
This product should be soldered and mounted under the following recommended conditions. For soldering
methods and conditions other than those recommended below, contact your nearby sales office.
gniredloS dohteM gniredloS lobmyS noitidnoC snoitidnoC
Infrared Reflow Peak temperature (package surface temperature) : 260°C or below
ssel ro sdnoces 01 : erutarepmet kaep ta emiT
Time at temperature of 220°C or higher : 60 seconds or less
Preheating time at 120 to 180°021 : C ±30 seconds
Maximum number of reflow processes : 3 times
Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below
IR260
Wave Soldering Peak temperature (molten solder temperature) : 260°C or below
ssel ro sdnoces 01 : erutarepmet kaep ta emiT
Preheating temperature (package surface temperature) : 120°C or below
Maximum number of flow processes : 1 time
Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below
WS260
Partial Heating Peak temperature (terminal temperature) : 350°C or below
Soldering time (per side of device) : 3 seconds or less
Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below
HS350
Caution Do not use different soldering methods together (except for partial heating).
Data Sheet PU10426EJ04V0DS 9
μ
PC8211TK
DISCONTINUED
