ST730C..L Series
2222222222222
12
D-336
di/dt Max. non-repetitive rate of rise Gate drive 20V, 20Ω, tr ≤ 1µs
of turned-on current TJ = TJ max, anode voltage ≤ 80% VDRM
Gate current 1A, dig/dt = 1A/µs
Vd = 0.67% VDRM, TJ = 25°C
ITM = 750A, TJ = TJ max, di/dt = 60A/µs, VR = 50V
dv/dt = 20V/µs, Gate 0V 100Ω, tp = 500µs
Parameter ST730C..L Units Conditions
Switching
1000 A/µs
tdTypical delay time 1.0
tqTypical turn-off time 150
µs
Voltage VDRM/VRRM, max. repetitive VRSM , maximum non- IDRM/IRRM max.
Type number Code peak and off-state voltage repetitive peak voltage @ TJ = TJ max
V V mA
08 800 900
12 1200 1300
ST730C..L 14 1400 1500 80
16 1600 1700
18 1800 1900
ELECTRICAL SPECIFICATIONS
Voltage Ratings
IT(AV) Max. average on-state current 990 (375) A180° conduction, half sine wave
@ Heatsink temperature 55 (85) °Cdouble side (single side) cooled
IT(RMS) Max. RMS on-state current 2000 DC @ 25°C heatsink temperature double side cooled
ITSM Max. peak, one-cycle 17800 t = 10ms No voltage
non-repetitive surge current 18700 At = 8.3ms reapplied
15000 t = 10ms100% VRRM
15700 t = 8.3ms reapplied Sinusoidal half wave,
I2tMaximum I2t for fusing 1591 t = 10ms No voltage Initial TJ = TJ max.
1452 t = 8.3ms reapplied
1125 t = 10ms 100% VRRM
1027 t = 8.3ms reapplied
I2√tMaximum I2√t for fusing 15910 KA2√st = 0.1 to 10ms, no voltage reapplied
VT(TO)1Low level value of threshold
voltage
VT(TO)2High level value of threshold
voltage
rt1 Low level value of on-state
slope resistance
rt2 High level value of on-state
slope resistance
VTM Max. on-state voltage 1.62 VIpk= 2000A, TJ = TJ max, tp = 10ms sine pulse
IHMaximum holding current 600
ILTypical latching current 1000
0.98 (16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.
0.32 (16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.
0.27 (I > π x IT(AV)),TJ = TJ max.
Parameter ST730C..L Units Conditions
1.12 (I > π x IT(AV)),TJ = TJ max.
On-state Conduction
KA2s
V
mΩ
mA TJ = 25°C, anode supply 12V resistive load
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