Features
l Through Hole Package
l 150oC Junction Temperature
Mechanical Data
l Case: TO-92, Molded Plastic
l Polarity: indicated as above.
Maximum Ratings @ 25oC Unless Otherwise Specified
Charateristic Symbol Value Unit
Collector-Emitter Voltage BC546
BC547
BC548
VCEO
65
45
30
V
Collector-Base Voltage BC546
BC547
BC548
VCBO
80
50
30
V
Emitter-Base Voltage
VEBO
6.0 V
Collector Current(DC) I
C
100 mA
Power Dissipation@TA=25oC
Pd625
5.0
mW
mW/oC
Power Dissipation@TC=25oC
Pd1.5
12
W
mW/oC
Thermal Resistance, Junction to
Ambient Air 200 oC/W
Thermal Resistance, Junction to
Case 83.3 oC/W
Operating & Storage Temperature T
j
, T
STG
-55~150 oC
BC546,B
BC547,A,B,C
BC548,A,B,C
NPN Silicon
Amplifier Transistor
625mW
Pin Configuration
Bottom View CB E
R
q
JC
R
q
JA
TO-92
INCHES MM
DIM MIN MAX MIN MAX NOTE
A.175 .185 4.45 4.70
B.175 .185 4.46 4.70
C.500 --- 12.7 ---
D.016 .020 0.41 0.63
E.135 .145 3.43 3.68
G.095 .105 2.42 2.67
E
B
C
D
G
DIMENSIONS
www.mccsemi.com
Revision: 2 2003/04/30
omponents
20736 Marilla Street Chatsworth

 !"#
$% !"#
MCC
MCC
ON CHARACTERISTICS
DC Current Gain
(IC = 10 µA, VCE = 5.0 V) BC547A/548A
BC546B/547B/548B
BC548C
(IC = 2.0 mA, VCE = 5.0 V) BC546
BC547
BC548
BC547A/548A
BC546B/547B/548B
BC547C/BC548C
(IC = 100 mA, VCE = 5.0 V) BC547A/548A
BC546B/547B/548B
BC548C
hFE
110
110
110
110
200
420
90
150
270
180
290
520
120
180
300
450
800
800
220
450
800
Collector–Emitter Saturation Voltage
(IC = 100 mA, IB = 5.0 mA) VCE(sat) --- 0.3 V
Base–Emitter Saturation Voltage
(IC = 100 mA, IB = 5.0 mA) VBE(sat) 1.0 V
Base–Emitter On Voltage
(IC = 2.0 mA, VCE = 5.0 V)
(IC = 10 mA, VCE = 5.0 V)
VBE(on) 0.55
0.7
0.77
V
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
(IC = 10 mA, VCE = 5.0 V, f = 100 MHz) BC546
BC547
BC548
fT150
150
150
300
300
300
MHz
Output Capacitance
(VCB = 10 V, IC = 0, f = 1.0 MHz) Cobo 1.7 4.5 pF
Input Capacitance
(VEB = 0.5 V, IC = 0, f = 1.0 MHz) Cibo 10 pF
Small–Signal Current Gain
(IC = 2.0 mA, VCE = 5.0 V, f = 1.0 kHz) BC546
BC547/548
BC547A/548A
BC546B/547B/548B
BC547C/548C
hfe 125
125
125
240
450
220
330
600
500
900
260
500
900
Noise Figure
(IC = 0.2 mA, VCE = 5.0 V, RS = 2 k, BC546
f = 1.0 kHz, f = 200 Hz) BC547
BC548
NF
2.0
2.0
2.0
10
10
10
dB
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage BC546
(IC = 1.0 mA, IB = 0) BC547
BC548
V(BR)CEO 65
45
30
V
Collector–Base Breakdown Voltage BC546
(IC = 100 µAdc) BC547
BC548
V(BR)CBO 80
50
30
V
Emitter–Base Breakdown V oltage BC546
(IE = 10 A, IC = 0) BC547
BC548
V(BR)EBO 6.0
6.0
6.0
V
BC546 thru BC548C
www.mccsemi.com
Revision: 2 2003/04/30
MCC
BC546 thru BC548C
Figure 1. Normalized DC Current Gain
IC, COLLECTOR CURRENT (mAdc)
2.0
Figure 2. “Saturation” and “On” Voltages
IC, COLLECTOR CURRENT (mAdc)
0.2 0.5 1.0 10 20 50
0.2 100
Figure 3. Collector Saturation Region
IB, BASE CURRENT (mA)
Figure 4. Base–Emitter Temperature Coefficient
IC, COLLECTOR CURRENT (mA)
2.0 5.0 200
0.6
0.7
0.8
0.9
1.0
0.5
0
0.2
0.4
0.1
0.3
1.6
1.2
2.0
2.8
2.4
1.2
1.6
2.0
0.02 1.0 10
020
0.1
0.4
0.8
hFE, NORMALIZED DC CURRENT GAIN
V, VOLTAGE (VOLTS)
VCE, COLLECTOR-EMITTER VOLTAGE (V)
VB, TEMPERATURE COEFFICIENT (mV/ C)°θ
1.5
1.0
0.8
0.6
0.4
0.3
0.2 0.5 1.0 10 20 50
2.0 10070
307.05.03.00.70.30.1
0.2 1.0 10 100
TA = 25°C
VBE(sat) @ IC/IB = 10
VCE(sat) @ IC/IB = 10
VBE(on) @ VCE = 10 V
VCE = 10 V
TA = 25°C
-55°C to +125°CTA = 25°C
IC = 50 mA IC = 100 mA
IC = 200 mA
IC =
20 mA
IC =
10 mA
1.0
BC547/BC548
Figure 5. Capacitances
VR, REVERSE VOLTAGE (VOLTS)
10
Figure 6. Current–Gain – Bandwidth Product
IC, COLLECTOR CURRENT (mAdc)
0.4 0.6 1.0 10 20
1.0 2.0 6.0 40
80
100
200
300
400
60
20
40
30
7.0
5.0
3.0
2.0
0.7 1.0 10 202.0 50
307.05.03.00.5
VCE = 10 V
TA = 25°C
C, CAPACITANCE (pF)
f, CURRENT-GAIN - BANDWIDTH PRODUCT (MHz)
T
0.8 4.0 8.0
TA = 25°C
Cob
Cib
www.mccsemi.com
Revision: 2 2003/04/30
MCC
BC546 thru BC548C
BC547/BC548
Figure 7. DC Current Gain
IC, COLLECTOR CURRENT (mA)
Figure 8. “On” Voltage
IC, COLLECTOR CURRENT (mA)
0.8
1.0
0.6
0.2
0.4
1.0
2.0
0.1 1.0 10 100
0.2
0.2
0.5
0.2 1.0 10 200
TA = 25°C
VBE(sat) @ IC/IB = 10
VCE(sat) @ IC/IB = 10
VBE @ VCE = 5.0 V
Figure 9. Collector Saturation Region
IB, BASE CURRENT (mA)
Figure 10. Base–Emitter Temperature Coefficient
IC, COLLECTOR CURRENT (mA)
-1.0
1.2
1.6
2.0
0.02 1.0 10
020
0.1
0.4
0.8
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
VB, TEMPERATURE COEFFICIENT (mV/ C)°θ
0.2 2.0 10 200
1.0
TA = 25°C
200 mA
50 mA
IC =
10 mA
hFE, DC CURRENT GAIN (NORMALIZED)
V, VOLTAGE (VOLTS)
VCE = 5 V
TA = 25°C
00.5 2.0 5.0 20 50 100
0.05 0.2 0.5 2.0 5.0
100 mA
20 mA
-1.4
-1.8
-2.2
-2.6
-3.0
0.5 5.0 20 50 100
-55°C to 125°C
θVB for VBE
BC546
Figure 11. Capacitance
VR, REVERSE VOLTAGE (VOLTS)
40
Figure 12. Current–Gain – Bandwidth Product
IC, COLLECTOR CURRENT (mA)
0.1 0.2 1.0 50
2.0 2.0 10 100
100
200
500
50
20
20
10
6.0
4.0
1.0 10 50 100
5.0
VCE = 5 V
TA = 25°C
C, CAPACITANCE (pF)
f, CURRENT-GAIN - BANDWIDTH PRODUCT
T
0.5 5.0 20
TA = 25°C
Cob
Cib
www.mccsemi.com
Revision: 2 2003/04/30