AO3420 20V N-Channel MOSFET General Description Product Summary The AO3420 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. This device is suitable for use as a uni-directional or bi-directional load switch. VDS 20V 6A ID (at VGS=10V) RDS(ON) (at VGS=10V) < 24m RDS(ON) (at VGS =4.5V) < 27m RDS(ON) (at VGS=2.5V) < 42m RDS(ON) (at VGS=1.8V) < 55m SOT23 Top View D Bottom View D D G S G S S G Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage Gate-Source Voltage VGS TA=25C Continuous Drain Current Pulsed Drain Current C Power Dissipation B Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead Rev.2. 0: August 2013 Steady-State Steady-State A 30 W 0.9 TJ, TSTG Symbol t 10s V 1.4 PD TA=70C 12 5 IDM TA=25C Units V 6 ID TA=70C Maximum 20 RJA RJL C -55 to 150 Typ 70 100 63 www.aosmd.com Max 90 125 80 Units C/W C/W C/W Page 1 of 5 AO3420 Electrical Characteristics (TJ=25C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=250A, VGS=0V Gate-Body leakage current VDS=0V, VGS= 12V Gate Threshold Voltage VDS=VGS ID=250A VGS=10V, ID=6A 0.75 24 VGS=4.5V, ID=5A 18 27 m VGS=2.5V, ID=4A 23 42 m VGS=1.8V, ID=2A 31 55 m VDS=5V, ID=6A 25 VSD Diode Forward Voltage IS=1A,VGS=0V 0.7 IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance Reverse Transfer Capacitance Rg Gate resistance V 35 Forward Transconductance Coss nA 1.1 16 gFS Crss 100 23 TJ=125C Static Drain-Source On-Resistance A 5 0.4 Units V 1 TJ=55C VGS(th) Max 20 VDS=20V, VGS=0V IGSS RDS(ON) Typ VGS=0V, VDS=10V, f=1MHz VGS=0V, VDS=0V, f=1MHz m S 1 V 2 A 420 525 630 pF 65 95 125 pF 45 75 105 pF 0.8 1.7 2.6 SWITCHING PARAMETERS Qg(10V) Total Gate Charge 12.5 nC Qg(4.5V) Total Gate Charge 6 nC 1 nC Qgs Gate Source Charge VGS=10V, VDS=10V, ID=6A Qgd Gate Drain Charge 2 nC tD(on) Turn-On DelayTime 3 ns tr Turn-On Rise Time 7.5 ns tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time Qrr VGS=10V, VDS=10V, RL=1.7, RGEN=3 20 ns 6 ns IF=6A, dI/dt=100A/s 14 Body Diode Reverse Recovery Charge IF=6A, dI/dt=100A/s 6 ns nC A. The value of RJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150C, using 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150C. Ratings are based on low frequency and duty cycles to keep initialTJ=25C. D. The RJA is the sum of the thermal impedence from junction to lead RJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150C. The SOA curve provides a single pulse rating. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.2. 0: August 2013 www.aosmd.com Page 2 of 5 AO3420 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 40 20 10V 3.5V 15 2.5V 4.5V ID(A) ID (A) 30 VDS=5V 20 10 1.8V 125C 5 10 25C VGS=3.5V 0 0 0 1 2 3 4 0 5 60 1 1.5 2 2.5 1.8 Normalized On-Resistance 55 50 45 RDS(ON) (m ) 0.5 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) VGS=1.8V 40 35 VGS=2.5V 30 25 VGS=4.5V 20 15 VGS=4.5V ID=5A VGS=2.5V ID=4A 1.6 1.4 17 VGS=1.8V 5 ID=2A 1.2 2 10 =10V VGS ID=6A 1 VGS=10V 10 0.8 0 5 0 10 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 0 Temperature (C) Figure 4: On-Resistance vs. Junction 18Temperature (Note E) 45 1.0E+02 ID=6A 1.0E+01 40 40 1.0E+00 30 IS (A) RDS(ON) (m ) 35 125C 25 125C 1.0E-01 1.0E-02 25C 1.0E-03 20 1.0E-04 25C 1.0E-05 15 0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev.2. 0: August 2013 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 5 AO3420 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 1000 VDS=10V ID=6A 800 Capacitance (pF) VGS (Volts) 8 6 4 600 400 Coss 2 200 0 0 0 5 10 Qg (nC) Figure 7: Gate-Charge Characteristics Ciss 15 Crss 0 5 10 15 VDS (Volts) Figure 8: Capacitance Characteristics 20 10000 100.0 TA=25C RDS(ON) limited 1000 10s Power (W) ID (Amps) 10.0 100s 1.0 1ms 10ms 0.1 100 10 10s TJ(Max)=150C TA=25C DC 1 0.0 0.00001 0.01 0.1 1 VDS (Volts) 10 Z JA Normalized Transient Thermal Resistance 1 0.1 10 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 10 0.001 100 D=Ton/T TJ,PK=TA+PDM.ZJA.RJA In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RJA=125C/W 0.1 PD PD 0.01 Ton Ton T T Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev.2. 0: August 2013 www.aosmd.com Page 4 of 5 AO3420 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC DUT - Vgs Ig Charge R es istiv e S w itch ing T e st C ircu it & W a ve fo rm s RL V ds Vds DUT Vgs 90 % + Vdd VDC - Rg 1 0% Vgs V gs t d (o n ) tr t d (o ff) to n tf t o ff D iode R ecovery T est C ircuit & W aveform s Q rr = - V ds + Idt DUT V gs V ds - Isd V gs Ig Rev.2. 0: August 2013 L Isd + VD C - IF t rr dI/dt I RM V dd V dd V ds www.aosmd.com Page 5 of 5