AO3420
20V N-Channel MOSFET
General Description Product Summary
V
DS
I
D
(at V
GS
=10V) 6A
R
DS(ON)
(at V
GS
=10V) < 24mΩ
R
DS(ON)
(at V
GS
=4.5V) < 27mΩ
R
DS(ON)
(at V
GS
=2.5V) < 42mΩ
R
DS(ON)
(at V
GS
=1.8V) < 55mΩ
Symbol
20V
The AO3420 uses advanced trench technology to provide
excellent R
DS(ON)
, low gate charge and operation with gate
voltages as low as 1.8V while retaining a 12V V
GS(MAX)
rating. This device is suitable for use as a uni-directional
or bi-directional load switch.
Maximum
Units
Parameter
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
G
D
S
SOT23
Top View Bottom View
D
G
S
G
S
D
Symbol
V
DS
V
GS
I
DM
T
J
, T
STG
Symbol
t ≤ 10s
Steady-State
Steady-State
R
θJL
Maximum Junction-to-Ambient
A
T
A
=70°C
W
1.4
Maximum Junction-to-Lead °C/W
°C/W
Maximum Junction-to-Ambient
63 125
80
T
A
=25°C
I
D
V±12Gate-Source Voltage T
A
=25°C A
6
5
30
Drain-Source Voltage 20 V
Maximum
Units
Parameter
Thermal Characteristics UnitsParameter Typ Max
Power Dissipation
B
P
D
Pulsed Drain Current
C
Continuous Drain
Current
0.9
T
A
=70°C
Junction and Storage Temperature Range -55 to 150
°C/W
R
θJA
70
100 90
°C
Rev.2. 0: August 2013
www.aosmd.com Page 1 of 5
AO3420
Symbol Min Typ Max Units
BV
DSS
20 V
V
DS
=20V, V
GS
=0V 1
T
J
=55°C 5
I
GSS
±100 nA
V
GS(th)
Gate Threshold Voltage 0.4 0.75 1.1 V
16 24
T
J
=125°C 23 35
18 27 mΩ
23 42 mΩ
31 55 mΩ
g
FS
25 S
V
SD
0.7 1 V
I
S
2 A
C
iss
420 525 630 pF
C
oss
65 95 125 pF
C
rss
45 75 105 pF
R
g
0.8 1.7 2.6 Ω
Q
g
(10V) 12.5 nC
Q
g
(4.5V) 6 nC
Q
gs
1 nC
Q
gd
2 nC
t
3
Drain-Source Breakdown Voltage I
D
=250µA, V
GS
=0V
V
GS
=10V, I
D
=6A
Reverse Transfer Capacitance V
GS
=0V, V
DS
=10V, f=1MHz
SWITCHING PARAMETERS
Electrical Characteristics (T
J
=25°C unless otherwise noted)
STATIC PARAMETERS
Parameter Conditions
I
DSS
µA
V
DS
=V
GS
I
D
=250µA
V
DS
=0V, V
GS
= ±12V
Zero Gate Voltage Drain Current
Gate-Body leakage current
Forward Transconductance
Diode Forward Voltage
R
DS(ON)
Static Drain-Source On-Resistance
mΩ
I
S
=1A,V
GS
=0V
V
DS
=5V, I
D
=6A
V
GS
=1.8V, I
D
=2A
V
GS
=4.5V, I
D
=5A
V
GS
=2.5V, I
D
=4A
Gate resistance V
GS
=0V, V
DS
=0V, f=1MHz
Total Gate Charge
V
GS
=10V, V
DS
=10V, I
D
=6A
Gate Source Charge
Gate Drain Charge
Total Gate Charge
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
Turn-On DelayTime
DYNAMIC PARAMETERS
t
D(on)
3
t
r
7.5 ns
t
D(off)
20 ns
t
f
6 ns
t
rr
14 ns
Q
rr
6nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Body Diode Reverse Recovery Time I
F
=6A, dI/dt=100A/µs
Turn-Off Fall Time
Body Diode Reverse Recovery Charge I
F
=6A, dI/dt=100A/µs
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime V
GS
=10V, V
DS
=10V, R
L
=1.7Ω,
R
GEN
=3Ω
A. The value of RθJA is measured with the device mounted on 1in2FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PDis based on TJ(MAX)=150°C, using ≤10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
Rev.2. 0: August 2013 www.aosmd.com Page 2 of 5
AO3420
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
17
5
2
10
0
18
0
5
10
15
20
0 0.5 1 1.5 2 2.5
ID(A)
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
10
15
20
25
30
35
40
45
50
55
60
0 5 10 15 20 25 30
RDS(ON) (mΩ
Ω
Ω
Ω)
ID(A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
0.8
1
1.2
1.4
1.6
1.8
0 25 50 75 100 125 150 175
Normalized On-Resistance
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
VGS=10V
ID=6A
VGS=2.5V
ID=4A
VGS=4.5V
ID=5A
VGS=1.8V
ID=2A
25°C
125°C
V
DS
=5V
V
GS
=4.5V
VGS=10V
0
10
20
30
40
012345
ID(A)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
V
GS
=3.5V
1.8V
3.5V
4.5V 2.5V
10V
VGS=2.5V
V
GS
=1.8V
40
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
1.0E+02
0.0 0.2 0.4 0.6 0.8 1.0 1.2
IS(A)
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
25°C
125
°
C
(Note E)
15
20
25
30
35
40
45
0 2 4 6 8 10
RDS(ON) (mΩ
Ω
Ω
Ω)
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
ID=6A
25°C
125°C
Rev.2. 0: August 2013 www.aosmd.com Page 3 of 5
AO3420
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
2
4
6
8
10
0 5 10 15
VGS (Volts)
Qg(nC)
Figure 7: Gate-Charge Characteristics
0
200
400
600
800
1000
0 5 10 15 20
Capacitance (pF)
VDS (Volts)
Figure 8: Capacitance Characteristics
Ciss
Coss
C
rss
VDS=10V
ID=6A
1
10
100
1000
10000
0.00001 0.001 0.1 10 1000
Power (W)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note F)
TA=25°C
0.0
0.1
1.0
10.0
100.0
0.01 0.1 1 10 100
ID(Amps)
VDS (Volts)
Figure 9: Maximum Forward Biased Safe
10
µ
s
10s
1ms
DC
RDS(ON)
limited
TJ(Max)=150°C
T
A
=25°C
100µs
10ms
Ambient (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
0.001
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Zθ
θ
θ
θJA Normalized Transient
Thermal Resistance
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Single Pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=125°C/W
T
on
T
P
D
Rev.2. 0: August 2013 www.aosmd.com Page 4 of 5
AO3420
-
+
VDC
Ig
Vds
DUT
-
+
VDC
Vgs
Vgs
10V
Qg
Qgs Qgd
Charge
Gate Charge Test Circuit & Waveform
DUT Vgs
Diode Recovery Test Circuit & Waveforms
Vds +
rr
Q = - Idt
-
+
VDC
DUT Vdd
Vgs
Vds
Vgs
RL
Rg
Vgs
Vds
10%
90%
Resistive Switching Test Circuit & Waveforms
t t
r
d(on)
t
on
t
d(off)
t
f
t
off
Ig
Vgs
-
+
VDC
L
Vds
Isd
Isd
Vds - I
F
dI/dt
I
RM
Vdd
Vdd
t
rr
Rev.2. 0: August 2013 www.aosmd.com Page 5 of 5