To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Mitsubishi Electric, Mitsubishi Electric Corporation, Mitsubishi Semiconductors, and other Mitsubishi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Note : Mitsubishi Electric will continue the business operations of high frequency & optical devices and power devices. Renesas Technology Corp. Customer Support Dept. April 1, 2003 MITSUBISHI Nch POWER MOSFET FS70VSH-03 HIGH-SPEED SWITCHING USE OUTLINE DRAWING r Dimensions in mm 4.5 1.5MAX. 10.5MAX. 3.0 +0.3 -0.5 1.5MAX. 8.6 0.3 9.8 0.5 1.3 +0.3 0 -0 (1.5) FS70VSH-03 1 B 5 0.5 q w e wr 2.5V DRIVE VDSS .................................................................................. 30V rDS (ON) (MAX) .............................................................. 14m ID ......................................................................................... 70A Integrated Fast Recovery Diode (TYP.) ............. 70ns 2.6 0.4 4.5 0.8 q GATE w DRAIN e SOURCE r DRAIN q e TO-220S APPLICATION Motor control, Lamp control, Solenoid control DC-DC converter, etc. MAXIMUM RATINGS Symbol (Tc = 25C) Ratings Unit VDSS Drain-source voltage VGS = 0V 30 V VGSS ID Gate-source voltage Drain current VDS = 0V 10 70 V A IDM IDA Drain current (Pulsed) Avalanche drain current (Pulsed) 280 70 A A IS ISM Source current Source current (Pulsed) 70 280 A A PD T ch Maximum power dissipation Channel temperature 70 -55 ~ +150 W C -55 ~ +150 C 1.2 g T stg -- Parameter Conditions L = 30H Storage temperature Weight Typical value Feb.1999 MITSUBISHI Nch POWER MOSFET FS70VSH-03 HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS (Tch = 25C) Symbol Parameter V (BR) DSS IGSS Drain-source breakdown voltage Gate-source leakage current IDSS VGS (th) Drain-source leakage current Gate-source threshold voltage rDS (ON) Drain-source on-state resistance rDS (ON) VDS (ON) Drain-source on-state resistance Drain-source on-state voltage y fs Ciss Forward transfer admittance Input capacitance Coss Crss Output capacitance Reverse transfer capacitance td (on) tr Turn-on delay time Rise time td (off) Turn-off delay time tf VSD Fall time Source-drain voltage Rth (ch-c) trr Thermal resistance Reverse recovery time Limits Test conditions Unit Min. Typ. Max. 30 -- -- -- -- 0.1 V A -- 0.6 -- 0.9 0.1 1.2 mA V -- 10 14 m -- -- 13 0.35 20 0.49 m V -- -- 60 4000 -- -- S pF -- -- 800 420 -- -- pF pF -- -- 50 250 -- -- ns ns -- 350 -- ns -- -- 350 1.0 -- 1.5 ns V -- -- -- 70 1.79 -- C/W ns ID = 1mA, VGS = 0V VGS = 10V, VDS = 0V VDS = 30V, VGS = 0V ID = 1mA, VDS = 10V ID = 35A, VGS = 4V ID = 35A, VGS = 2.5V ID = 35A, VGS = 4V ID = 35A, VDS = 10V VDS = 10V, VGS = 0V, f = 1MHz VDD = 15V, ID = 35A, VGS = 4V, RGEN = RGS = 50 IS = 35A, VGS = 0V Channel to case IS = 35A, dis/dt = -50A/s PERFORMANCE CURVES 80 60 40 20 0 MAXIMUM SAFE OPERATING AREA 3 2 DRAIN CURRENT ID (A) POWER DISSIPATION PD (W) POWER DISSIPATION DERATING CURVE 100 0 50 100 150 200 102 7 5 3 2 tw = 10ms 101 7 5 3 2 1ms 100 7 5 3 100ms 10ms DC TC = 25C Single Pulse 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3 CASE TEMPERATURE TC (C) DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL) OUTPUT CHARACTERISTICS (TYPICAL) 100 50 4V VGS = 5V VGS = 5V 80 2.5V 60 PD = 70W 2V 40 1.5V 20 2.5V DRAIN CURRENT ID (A) DRAIN CURRENT ID (A) 3V 40 0 0.4 0.8 1.2 1.6 2.0 DRAIN-SOURCE VOLTAGE VDS (V) 2V 4V 3V 30 1.5V 20 10 TC = 25C Pulse Test 0 100ms 0 TC = 25C Pulse Test 0 0.2 0.4 0.6 0.8 1.0 DRAIN-SOURCE VOLTAGE VDS (V) Feb.1999 MITSUBISHI Nch POWER MOSFET FS70VSH-03 HIGH-SPEED SWITCHING USE ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) 1.2 ID = 100A 0.8 70A 0.4 30A 0 2.0 3.0 4.0 7 5 3 2 103 7 5 3 2 102 7 5 3 2 4 2 3 4 5 7 101 2 3 4 5 7 102 FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) 20 104 4V 8 TRANSFER CHARACTERISTICS (TYPICAL) 40 2 VGS = 2.5V 12 DRAIN CURRENT ID (A) 60 0 16 GATE-SOURCE VOLTAGE VGS (V) TC = 25C VDS = 10V Pulse Test 80 TC = 25C Pulse Test 0 0 10 5.0 FORWARD TRANSFER ADMITTANCE yfs (S) DRAIN CURRENT ID (A) 100 1.0 DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (m) 1.6 0 CAPACITANCE Ciss, Coss, Crss (pF) 20 TC = 25C Pulse Test 102 VDS = 10V 7 Pulse Test 5 4 3 TC = 25C 2 75C 101 7 5 4 3 125C 2 0 1.0 2.0 3.0 4.0 100 0 10 5.0 2 3 4 5 7 101 2 3 4 5 7 102 GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A) CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) SWITCHING CHARACTERISTICS (TYPICAL) Tch = 25C f = 1MHZ VGS = 0V Ciss Coss Crss SWITCHING TIME (ns) DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V) 2.0 ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 103 7 5 4 3 td(off) tf 2 tr 102 7 5 4 3 td(on) Tch = 25C VDD = 15V VGS = 4V RGEN = RGS = 50 2 3 5 7100 2 3 5 7 101 2 3 5 7 102 2 3 DRAIN-SOURCE VOLTAGE VDS (V) 101 0 10 2 3 4 5 7 101 2 3 4 5 7 102 DRAIN CURRENT ID (A) Feb.1999 MITSUBISHI Nch POWER MOSFET FS70VSH-03 HIGH-SPEED SWITCHING USE 5 SOURCE CURRENT IS (A) VDS = 15V 3 20V 25V 2 1 0 20 40 60 80 TC = 125C 75C 25 25C 0 0.4 0.8 1.2 1.6 2.0 SOURCE-DRAIN VOLTAGE VSD (V) ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 2.0 2 100 7 5 4 3 2 -50 0 50 100 BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 1.4 VGS = 0V ID = 1mA 1.2 1.0 0.8 0.6 -50 0 50 100 150 CHANNEL TEMPERATURE Tch (C) VDS = 10V ID = 1mA 1.6 1.2 0.8 0.4 0 150 CHANNEL TEMPERATURE Tch (C) 0.4 50 GATE CHARGE Qg (nC) 101 7 VGS = 4V ID = 1/2ID 5 Pulse Test 4 3 10-1 VGS = 0V Pulse Test 75 0 100 GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25C) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (tC) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (tC) 100 Tch = 25C ID = 70A 4 0 DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25C) SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) -50 0 50 100 150 CHANNEL TEMPERATURE Tch (C) TRANSIENT THERMAL IMPEDANCE Zth (ch-c) (C/W) GATE-SOURCE VOLTAGE VGS (V) GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 102 7 5 3 2 101 7 5 3 D = 1.0 2 100 0.5 7 0.2 PDM 5 3 0.1 tw 2 0.05 T 10-1 0.02 7 D= tw 5 0.01 T 3 Single Pulse 2 10-2 -4 10 2 3 5710-3 2 3 5710-22 3 5710-12 3 57100 2 3 57101 2 3 57102 PULSE WIDTH tw (s) Feb.1999