MKW39/38/37 Data Sheet
An ultra low-power, highly integrated Bluetooth® Low
Energy 5.0 wireless microcontroller
Multi-Standard Radio
2.4 GHz Bluetooth Low Energy (Bluetooth LE) version
5.0 compliant supporting up to 8 simultaneous
hardware connections and all optional features
including:
High speed (2M PHY)
Long range
Advertising Extension
High duty cycle non-connectable advertising
Channel selection algorithm #2
Typical Bluetooth LE Receiver Sensitivity
Bluetooth LE 2 Mbit/s: –95.5 dBm
Bluetooth LE 1 Mbit/s: –98 dBm
Bluetooth LE LR 500 kbit/s: –101 dBm
Bluetooth LE LR 125 kbit/s: –105 dBm
Generic FSK modulation
Data Rate: 250, 500, 1000 and 2000 kbit/s
Modulations: GFSK BT = 0.5, MSK
Modulation Index: 0.32, 0.5, 0.7, and 1.0
Typical Receiver Sensitivity (250 kbit/s GFSK-
BT=0.5, h=0.5) = –101 dBm
Programmable Transmitter Output Power: –30 dBm to
+5 dBm
Low external component count for low-cost application
On-chip balun with single ended bidirectional RF port
System peripherals
Nine MCU low-power modes to provide power
optimization based on application requirements
DC-DC Converter supporting Buck and Bypass
operating modes
Direct Memory Access (DMA) controller
Computer Operating Properly (COP) watchdog
Serial Wire Debug (SWD) Interface and Micro Trace
buffer
Bit Manipulation Engine (BME)
Timers
16-bit Low-power Timer (LPTMR)
3 Timer/PWM Modules(TPM): One 4 channel TPM
and two 2 channel TPMs
Programmable Interrupt Timer (PIT)
Real-Time Clock (RTC)
Communication interfaces
2 Serial Peripheral Interface (SPI) modules
2 Inter-integrated Circuit (I2C) modules
Low-power UART (LPUART) module with LIN
support (2x LPUART on KW38)
Carrier Modulator Timer (CMT)
FlexCAN module (with CAN FD support up to 3.2
Mbit/s baudrate) on KW38
MKW39A512VFT4
MKW38A512VFT4
MKW38Z512VFT4
MKW37A512VFT4
MKW37Z512VFT4
48 "Wettable" HVQFN
7x7 mm Pitch 0.5 mm
NXP Semiconductors MKW39A512
Data Sheet: Technical Data Rev. 7, 03/2020
NXP reserves the right to change the production detail specifications as may be
required to permit improvements in the design of its products.
Analog Modules
16-bit Analog-to-Digital Converter (ADC)
6-bit High-Speed Analog Comparator (CMP)
1.2 V Voltage Reference (VREF)
MCU and Memories
256 KB program flash memory plus 256 KB FlexNVM
on KW39/38
512 KB program flash memory on KW37
8 KB FlexRAM supporting EEPROM emulation on
KW39/38
8 KB program acceleration RAM on KW37
On-chip 64 KB SRAM
Up to 48 MHz Arm® Cortex®-M0+ core
Low-power Consumption
Transceiver current (DC-DC buck mode, 3.6 V supply)
Typical Rx current: 6.3 mA
Typical Tx current: 5.7 mA
Low-power Mode (VLLS0) Current: 266.6 nA
Security
AES-128 Hardware Accelerator (AESA)
True Random Number Generator (TRNG)
Advanced flash security on Program Flash
80-bit unique identification number per chip
40-bit unique Media Access Control (MAC) sub-
address
LE Secure Connections
Clocks
26 and 32 MHz supported for Bluetooth LE and
Generic FSK modes
32.768 kHz Crystal Oscillator
Operating Characteristics
Voltage range: 1.71 V to 3.6 V
Ambient temperature range: –40 to 105 °C
AEC Q100 Grade 2 Automotive Qualification
Industrial Qualification
Human-machine Interface (HMI)
General-purpose input/output (GPIO)
KW39/38/37 Part Numbers
Device Qualification
Tier CAN FD 512 KB
P-Flash
256 KB P-
Flash/256
KB
FlexNVM
Second LPUART
with LIN
8 KB
FlexRAM
EEPROM
Package
MKW39A512VFT4 Auto AEC-Q100
Grade 2
N N Y N Y 7X7 mm 48-
pin "Wettable"
HVQFN
MKW38A512VFT4 Auto AEC-Q100
Grade 2
Y N Y Y Y
MKW38Z512VFT4 Industrial Y N Y Y Y
MKW37A512VFT4 Auto AEC-Q100
Grade 2
N Y N N N
MKW37Z512VFT4 Industrial N Y N N N
Related Resources
Type Description
Product Selector The Product Selector lets you find the right Kinetis part for your design.
Fact Sheet The Fact Sheet gives overview of the product key features and its uses.
Reference Manual The Reference Manual contains a comprehensive description of the structure and function
(operation) of a device.
Data Sheet The Data Sheet includes electrical characteristics and signal connections.
Chip Errata The chip mask set Errata provides additional or corrective information for a particular device mask
set.
Package drawing Package dimensions are available in package drawings.
2MKW39/38/37 Data Sheet, Rev. 7, 03/2020
NXP Semiconductors
MKW39/38/37 Data Sheet, Rev. 7, 03/2020 3
NXP Semiconductors
Table of Contents
1 Introduction........................................................................... 5
2 Feature Descriptions............................................................. 6
2.1 Block Diagram............................................................... 6
2.2 Radio features............................................................... 8
2.3 Microcontroller features................................................. 9
2.4 System features.............................................................10
2.5 Peripheral features........................................................ 12
2.6 Security Features...........................................................17
3 Transceiver Description........................................................ 18
3.1 Transceiver Functions................................................... 18
3.2 Key Specifications......................................................... 19
3.3 Channel Map Frequency Plans .................................... 19
3.3.1 Channel Plan for Bluetooth Low Energy............19
3.3.2 Other Channel Plans ........................................ 21
4 Transceiver Electrical Characteristics................................... 21
4.1 Radio operating conditions............................................ 21
4.2 Receiver Feature Summary...........................................22
4.3 Transmit and PLL Feature Summary.............................26
5 System and Power Management.......................................... 31
5.1 Power Management.......................................................31
5.1.1 DC-DC Converter.............................................. 32
5.2 Modes of Operation....................................................... 32
5.2.1 Power modes.....................................................32
6 KW39/38/37 Electrical Characteristics.................................. 35
6.1 AC electrical characteristics...........................................35
6.2 Nonswitching electrical specifications............................35
6.2.1 Voltage and current operating requirements..... 35
6.2.2 LVD and POR operating requirements..............36
6.2.3 Voltage and current operating behaviors...........37
6.2.4 Power mode transition operating behaviors...... 38
6.2.5 Power consumption operating behaviors.......... 39
6.2.6 Diagram: Typical IDD_RUN operating behavior46
6.2.7 SoC Power Consumption.................................. 48
6.2.8 Designing with radiated emissions in mind........49
6.2.9 Capacitance attributes.......................................49
6.3 Switching electrical specifications..................................49
6.3.1 Device clock specifications................................49
6.3.2 General switching specifications....................... 50
6.4 Thermal specifications...................................................51
6.4.1 Thermal operating requirements....................... 51
6.4.2 Thermal attributes..............................................51
6.5 Peripheral operating requirements and behaviors.........52
6.5.1 Core modules.................................................... 52
6.5.2 System modules................................................ 53
6.5.3 Clock modules................................................... 54
6.5.4 Memories and memory interfaces..................... 57
6.5.5 Security and integrity modules.......................... 61
6.5.6 Analog............................................................... 61
6.5.7 Timers................................................................68
6.5.8 Communication interfaces................................. 68
6.5.9 Human-machine interfaces (HMI)......................73
6.6 DC-DC Converter Operating Requirements.................. 73
6.7 Ratings...........................................................................75
6.7.1 Thermal handling ratings................................... 75
6.7.2 Moisture handling ratings.................................. 75
6.7.3 ESD handling ratings.........................................76
6.7.4 Voltage and current operating ratings............... 76
7 Pin Diagrams and Pin Assignments......................................76
7.1 KW39/37 Signal Multiplexing and Pin Assignments...... 77
7.2 KW38 Signal Multiplexing and Pin Assignments........... 79
7.3 KW39/38/37 Pinouts......................................................82
7.4 Module Signal Description Tables................................. 83
7.4.1 Core Modules.................................................... 83
7.4.2 Radio Modules...................................................84
7.4.3 System Modules................................................ 85
7.4.4 Clock Modules................................................... 85
7.4.5 Analog Modules.................................................86
7.4.6 Timer Modules...................................................87
7.4.7 Communication Interfaces.................................87
7.4.8 Human-Machine Interfaces(HMI)...................... 89
8 Package Information............................................................. 89
8.1 Obtaining package dimensions......................................89
9 Part identification...................................................................90
9.1 Description.....................................................................90
9.2 Format........................................................................... 90
9.3 Fields............................................................................. 90
9.4 Example.........................................................................91
10 Revision History.................................................................... 91
4MKW39/38/37 Data Sheet, Rev. 7, 03/2020
NXP Semiconductors
1 Introduction
The KW39/38/37 wireless microcontrollers (MCU), which includes the KW39A,
KW38A/Z and KW37A/Z families of devices, are highly integrated single-chip
devices that enable Bluetooth Low Energy 5.0 and Generic FSK connectivity for
automotive, and industrial embedded systems. To meet the stringent requirements of
automotive applications, the KW39/38/37 is fully AEC Q100 Grade 2 Automotive
Qualified. The target applications center on wirelessly bridging the embedded world
with mobile devices to enhance the human interface experience, share embedded data
between devices and the cloud and enable wireless firmware updates. Leading the
automotive applications is the Digital Key, where a smartphone can be used by the
owner as an alternative to the key FOB for unlocking and personalizing the driving
experience. For a car sharing experience, the owner can provide selective, temporary
authorization for access to the car allowing the authorized person to unlock, start, and
operate the car using their mobile device using Bluetooth LE.
The KW39/38/37 Wireless MCU integrates an Arm® Cortex-M0+ CPU with up to
512 KB flash and 64 KB SRAM and a 2.4 GHz radio that supports Bluetooth LE 5.0
and Generic FSK modulations. The Bluetooth LE radio supports up to 8 simultaneous
connections in any master/slave combination.
The KW38 includes an integrated FlexCAN module enabling seamless integration
into a cars in-vehicle or an industrial CAN communication network, enabling
communication with external control and sensor monitoring devices over Bluetooth
LE. The FlexCAN module can support CAN’s flexible data-rate (CAN FD) protocol
for increased bandwidth and lower latency required by many automotive applications.
The KW39/38/37 devices can be used as a "BlackBox" modem to add Bluetooth LE
or Generic FSK connectivity to an existing host MCU or MPU (microprocessor). The
devices may also be used as a standalone smart wireless sensor with embedded
application where no host controller is required.
The RF circuit of the KW39/38/37 is optimized to require very few external
components, achieving the smallest RF footprint possible on a printed circuit board.
Extremely long battery life is achieved through the efficiency of code execution in the
Cortex-M0+ CPU core and the multiple low-power operating modes of the
KW39/38/37. For power critical applications, an integrated DC-DC converter enables
operation from a single coin cell or Li-ion battery with a significant reduction of peak
receive and transmit current consumption.
Introduction
MKW39/38/37 Data Sheet, Rev. 7, 03/2020 5
NXP Semiconductors
2 Feature Descriptions
This section provides a simplified block diagram and highlights the KW39/38/37
features.
2.1 Block Diagram
IPS
(for RSIM) IPS
DCDC
VDCDC_IN
SRAM
Flash
Arm Cortex M0+ Core
NVIC WIC
IOPORT
DAP
MTB
GPIO
BME
Flash
AIPS-Lite
MDM
DWT
RTC
LPTMR
PIT
SIM
RCM
PMC
SMC LPUART
ADC
Unified Bus
M0
S0
S1
Serial Wire Debug
IPS
AHBLite
S2
Controller
FlexNVM
256 KB
S3
32K Osc
MCG
FLL IRC
32 kHz
IRC
4 MHz
DMA MUX
4ch DMA
AHBLite
CMP TPM x3
32M Osc
VREF
I2C x2
CMT
256 KB
64 KByte
TRNG SPI x2
M2A
Radio
LTC(AESA)
Data stream
M3
Crossbar-Lite Switch (AXBS)
FlexRAM
8 KB
Figure 1. KW39 Detailed Block Diagram
IPS
(for RSIM) IPS
DCDC
VDCDC_IN
SRAM
Flash
Arm Cortex M0+ Core
NVIC WIC
IOPORT
DAP
MTB
GPIO
BME
Flash
AIPS-Lite
MDM
DWT
RTC
LPTMR
PIT
SIM
RCM
PMC
SMC LPUART x2
ADC
Unified Bus
M0
S0
S1
Serial Wire Debug
IPS
AHBLite
S2
Controller
FlexNVM
256 KB
S3
32K Osc
MCG
FLL IRC
32 kHz
IRC
4 MHz
DMA MUX
4ch DMA
AHBLite
CMP TPM x3
32M Osc
VREF
I2C x2
CMT
FlexCAN
256 KB
64 KByte
TRNG SPI x2
M2A
Radio
LTC(AESA)
Data stream
M3
Crossbar-Lite Switch (AXBS)
FlexRAM
8 KB
Figure 2. KW38 Detailed Block Diagram
Feature Descriptions
6MKW39/38/37 Data Sheet, Rev. 7, 03/2020
NXP Semiconductors
IPS
(for RSIM) IPS
DCDC
VDCDC_IN
SRAM
Flash
Arm Cortex M0+ Core
NVIC WIC
IOPORT
DAP
MTB
GPIO
BME
Flash
AIPS-Lite
MDM
DWT
RTC
LPTMR
PIT
SIM
RCM
PMC
SMC LPUART
ADC
Unified Bus
M0
S0
S1
Serial Wire Debug
IPS
AHBLite
S2
Controller
Prg Acc RAM
8 KB
S3
32K Osc
MCG
FLL IRC
32 kHz
IRC
4 MHz
DMA MUX
4ch DMA
AHBLite
CMP TPM x3
32M Osc
VREF
I2C x2
CMT
512 KB
64 KByte
TRNG SPI x2
M2A
Radio
LTC(AESA)
Data stream
M3
Crossbar-Lite Switch (AXBS)
Figure 3. KW37 Detailed Block Diagram
Table 1. List of IPs in block diagrams
Acronym Definition
ADC Analog-to-Digital Converter
AESA Advanced Encryption Standard Accelerator
AIPS Peripheral Bridge
BME Bit Manipulation Engine
CMP Comparator
CMT Carrier Modulator Timer
DAP Debug Access Port
DMA Direct Memory Access
DMAMUX Direct Memory Access Multiplexer
DWT Data Watchpoint and Trace
FLL Frequency-Locked Loop
GPIO General Purpose Input/Output
I2C Inter-integrated Circuit
IRC Internal Reference Clock
LPTMR Low-Power Timer
LPUART Low-Power UART
LTC LP Trusted Cryptography
MCG Multipurpose Clock Generator
MDM Miscellaneous Debug Module
MTB Micro Trace Buffer
NVIC Nested Vectored Interrupt Controller
OSC Oscillator
PIT Periodic Interrupt Timer
Table continues on the next page...
Feature Descriptions
MKW39/38/37 Data Sheet, Rev. 7, 03/2020 7
NXP Semiconductors
Table 1. List of IPs in block diagrams (continued)
Acronym Definition
PMC Power Management Control
PORT Port Control and Interrupt
Prg Acc RAM Flash Programming Acceleration RAM
RCM Reset Control Module
RSIM Radio System Integration Module
RTC Real-Time Clock
SIM System Integration Module
SMC System Mode Controller
SPI Serial Peripheral Interface
TRNG True Random Number Generator
VREF Voltage Reference
2.2 Radio features
Operating frequencies:
2.4 GHz ISM band (2400-2483.5 MHz)
Medical Body Area Network frequency band (MBAN) 2360-2400 MHz
Supported standards:
Bluetooth Low Energy Version 5.0 compliant radio supporting all mandatory and
optional features including:
Bluetooth LE 4.2 errata
2 Mbit/s high-speed mode
Long range coded PHY (125/500 kbit/s)
Advertising Extensions
High duty cycle non-connectable advertising
Channel selection algorithm #2
Support for up to 8 simultaneous Bluetooth LE hardware connections in any
master, slave combination
Bluetooth LE Application Profiles
Generic FSK modulation supporting data rates of 250, 500, 1000 and 2000 kbit/s
Other features:
Programmable transmit output power up to +5 dBm with greater than 30 dB power
control dynamic range
Feature Descriptions
8MKW39/38/37 Data Sheet, Rev. 7, 03/2020
NXP Semiconductors
26 MHz and 32 MHz crystals supported for Bluetooth LE and Generic FSK
modes
Up to 26 devices supported by whitelist in hardware
Up to 8 private resolvable addresses supported in hardware
Supports DMA capture of IQ data and phase for localization applications
Support for distance estimation and direction finding applications
Integrated on-chip balun
Single ended bidirectional RF port shared by transmit and receive
Low external component count
Supports transceiver range extension using external PA and/or LNA
2.3 Microcontroller features
Arm Cortex-M0+ CPU
Up to 48 MHz CPU
As compared to Cortex-M0, the Cortex-M0+ uses an optimized 2-stage pipeline
microarchitecture for reduced power consumption and improved architectural
performance (cycles per instruction)
Supports up to 32 interrupt request sources
Binary compatible instruction set architecture with the Cortex-M0 core
Thumb instruction set combines high code density with 32-bit performance
Serial Wire Debug (SWD) reduces the number of pins required for debugging
Micro Trace Buffer (MTB) provides lightweight program trace capabilities using
system RAM as the destination memory
Nested Vectored Interrupt Controller (NVIC)
32 vectored interrupts, 4 programmable priority levels
Includes a single non-maskable interrupt
Wake-up Interrupt Controller (WIC)
Supports interrupt handling when system clocking is disabled in low-power
modes
Takes over and emulates the NVIC behavior when correctly primed by the NVIC
on entry to very-deep-sleep
A rudimentary interrupt masking system with no prioritization logic signals for
wake-up as soon as a non-masked interrupt is detected
Debug Controller
Feature Descriptions
MKW39/38/37 Data Sheet, Rev. 7, 03/2020 9
NXP Semiconductors
Two-wire Serial Wire Debug (SWD) interface
Hardware breakpoint unit for 2 code addresses
Hardware watchpoint unit for 2 data items
Micro Trace Buffer for program tracing
On-Chip Memory
Up to 512 KB Flash
KW39/38 contains 256 KB program flash with ECC and 256 KB FlexNVM
enabling EEPROM emulation.
KW37 contains 512 KB program flash with ECC.
Flash implemented as two equal blocks each of 256 KB block. Code can
execute or read from one block while the other block is being erased or
programmed on KW37 only.
Firmware distribution protection. Program flash can be marked execute-only
on a per-sector (8 KB) basis to prevent firmware contents from being read by
third parties.
64 KB SRAM
KW39/38 contains 8 KB FlexRAM enabling EEPROM emulation.
KW37 contains 8 KB program acceleration RAM.
Security circuitry to prevent unauthorized access to RAM and flash contents
through the debugger
2.4 System features
Power Management Control Unit (PMC)
Programmable power saving modes
Available wake-up from power saving modes via internal and external sources
Integrated Power-on Reset (POR)
Integrated Low Voltage Detect (LVD) with reset (brownout) capability
Selectable LVD trip points
Programmable Low Voltage Warning (LVW) interrupt capability
Individual peripheral clocks can be gated off to reduce current consumption
Internal Buffered bandgap reference voltage
Factory programmed trim for bandgap and LVD
1 kHz Low-power Oscillator (LPO)
DC-DC Converters
Feature Descriptions
10 MKW39/38/37 Data Sheet, Rev. 7, 03/2020
NXP Semiconductors
Internal switched mode power supply supporting Buck and Bypass operating
modes
Buck operation supports external voltage sources of 2.1 V to 3.6 V
When DC-DC is not used, the device supports an external voltage range of 1.5 V
to 3.6 V (1.5 - 3.6 V on VDD_RF1, VDD_RF2, VDD_RF3 and
VDD_1P5OUT_PMCIN pins. 1.71 - 3.6 V on VDD_0, VDD_1, and VDDA pins)
An external inductor is required to support the Buck mode
The DC-DC Converter VDD_1P8OUT current drive for external devices (MCU
in RUN mode, Radio is enabled, other peripherals are disabled)
Up to 45 mA in buck mode with VDD_1P8OUT = 1.8 V
Up to 27 mA in buck mode with VDD_1P8OUT = 3.0 V
Direct Memory Access (DMA) Controller
All data movement via dual-address transfers: read from source, write to
destination
Programmable source and destination addresses and transfer size
Support for enhanced addressing modes
4-channel implementation that performs complex data transfers with minimal
intervention from a host processor
Internal data buffer, used as temporary storage to support 16- and 32-byte
transfers
Connections to the crossbar switch for bus mastering the data movement
Transfer Control Descriptor (TCD) organized to support two-deep, nested transfer
operations
32-byte TCD stored in local memory for each channel
An inner data transfer loop defined by a minor byte transfer count
An outer data transfer loop defined by a major iteration count
Channel activation via one of three methods:
Explicit software initiation
Initiation via a channel-to-channel linking mechanism for continuous
transfers
Peripheral-paced hardware requests, one per channel
Fixed-priority and round-robin channel arbitration
Channel completion reported via optional interrupt requests
One interrupt per channel, optionally asserted at completion of major iteration
count
Optional error terminations per channel and logically summed together to form
one error interrupt to the interrupt controller
Optional support for scatter/gather DMA processing
Support for complex data structures
Feature Descriptions
MKW39/38/37 Data Sheet, Rev. 7, 03/2020 11
NXP Semiconductors
DMA Channel Multiplexer (DMA MUX)
4 independently selectable DMA channel routers
2 periodic trigger sources available
Each channel router can be assigned to 1 of the peripheral DMA sources
COP Watchdog Module
Independent clock source input (independent from CPU/bus clock)
Choice between two clock sources
LPO oscillator
Bus clock
System Clocks
Both 26 MHz and 32 MHz crystal reference oscillator supported for Bluetooth LE
and Generic FSK modes
MCU can derive its clock either from the crystal reference oscillator or the
Frequency-locked Loop (FLL)1
32.768 kHz crystal reference oscillator used to maintain precise Bluetooth Low
Energy timing in low-power modes
Multipurpose Clock Generator (MCG)
Internal reference clocks — Can be used as a clock source for other on-chip
peripherals
On-chip RC oscillator range of 31.25 kHz to 39.0625 kHz with 3% accuracy
across full temperature range
On-chip 4 MHz oscillator with 11% accuracy across full temperature range
Frequency-locked Loop (FLL) controlled by internal or external reference
20 MHz to 48 MHz FLL output
Unique Identifiers
80-bit Unique ID represents a unique identifier for each chip
40-bit unique Media Access Control (MAC) address, which can be used to build a
unique 48-bit Bluetooth Low Energy MAC address
2.5 Peripheral features
16-bit Analog-to-Digital Converter (ADC)
Linear successive approximation algorithm with 16-bit resolution
Output formatted in differential-ended 16-, 13-, 11-, and 9-bit mode
1. Clock options can have restrictions based on the chosen SoC configuration.
Feature Descriptions
12 MKW39/38/37 Data Sheet, Rev. 7, 03/2020
NXP Semiconductors
Output formatted in single-ended 16-, 12-, 10-, and 8-bit mode
Single or continuous conversion
Configurable sample time and conversion speed/power
Conversion rates in 16-bit mode with no averaging up to ~500Ksamples/sec
Input clock selection
Operation in low-power modes for lower noise operation
Asynchronous clock source for lower noise operation
Selectable asynchronous hardware conversion trigger
Automatic compare with interrupt for less-than, or greater than, or equal to
programmable value
Temperature sensor
Battery voltage measurement
Hardware average function
Selectable voltage reverence
Self-calibration mode
High-Speed Analog Comparator (CMP)
6-bit DAC programmable reference generator output
Up to eight selectable comparator inputs; each input can be compared with any
input by any polarity sequence
Selectable interrupt on rising edge, falling edge, or either rising or falling edges of
comparator output
Two performance modes:
Shorter propagation delay at the expense of higher power
Low-power, with longer propagation delay
Operational in all MCU power modes except VLLS0 mode
Voltage Reference(VREF1)
Programmable trim register with 0.5 mV steps, automatically loaded with factory
trimmed value upon reset
Programmable buffer mode selection:
Off
Bandgap enabled/standby (output buffer disabled)
High-power buffer mode (output buffer enabled)
1.2 V output at room temperature
VREF_OUT output signal
Low-power Timer (LPTMR)
One channel
Operation as timer or pulse counter
Feature Descriptions
MKW39/38/37 Data Sheet, Rev. 7, 03/2020 13
NXP Semiconductors
Selectable clock for prescaler/glitch filter
1 kHz internal LPO
External low-power crystal oscillator
Internal reference clock
Configurable glitch filter or prescaler
Interrupt generated on timer compare
Hardware trigger generated on timer compare
Functional in all power modes
Timer/PWM (TPM)
TPM0: 4 channels, TPM1 and TPM2: 2 channels each
Selectable source clock
Programmable prescaler
16-bit counter supporting free-running or initial/final value, and counting is up or
up-down
Input capture, output compare, and edge-aligned and center-aligned PWM modes
Input capture and output compare modes
Generation of hardware triggers
TPM1 and TPM2: Quadrature decoder with input filters
Global time base mode shares single time base across multiple TPM instances
Programmable Interrupt Timer (PIT)
Up to 2 interrupt timers for triggering ADC conversions
32-bit counter resolution
Clocked by bus clock frequency
Real-Time Clock (RTC)
32-bit seconds counter with 32-bit alarm
Can be invalidated on detection of tamper detect
16-bit prescaler with compensation
Register write protection
Hard Lock requires MCU POR to enable write access
Soft lock requires POR or software reset to enable write/read access
Capable of waking up the system from low-power modes
Inter-Integrated Circuit (I2C)
Two channels
Compatible with I2C bus standard and SMBus Specification Version 2 features
Up to 400 kHz operation
Feature Descriptions
14 MKW39/38/37 Data Sheet, Rev. 7, 03/2020
NXP Semiconductors
Multi-master operation
Software programmable for one of 64 different serial clock frequencies
Programmable slave address and glitch input filter
Interrupt driven byte-by-byte data transfer
Arbitration lost interrupt with automatic mode switching from master to slave
Calling address identification interrupt
Bus busy detection broadcast and 10-bit address extension
Address matching causes wake-up when processor is in low-power mode
LPUART
One channel (2 channels on KW38)
Full-duplex operation
Standard mark/space Non-return-to-zero (NRZ) format
13-bit baud rate selection with fractional divide of 32
Programmable 8-bit or 9-bit data format
Programmable 1 or 2 stop bits
Separately enabled transmitter and receiver
Programmable transmitter output polarity
Programmable receive input polarity
13-bit break character option
11-bit break character detection option
Two receiver wake-up methods:
Idle line wake-up
Address mark wake-up
Address match feature in receiver to reduce address mark wake-up ISR overhead
Interrupt or DMA driven operation
Receiver framing error detection
Hardware parity generation and checking
Configurable oversampling ratio to support from 1/4 to 1/32 bit-time noise
detection
Operation in low-power modes
Hardware Flow Control RTS\CTS
Functional in Stop/VLPS modes
Break detect supporting LIN
Serial Peripheral Interface (SPI)
Two independent SPI channels
Master and slave mode
Full-duplex, three-wire synchronous transfers
Programmable transmit bit rate
Feature Descriptions
MKW39/38/37 Data Sheet, Rev. 7, 03/2020 15
NXP Semiconductors
Double-buffered transmit and receive data registers
Serial clock phase and polarity options
Slave select output
Control of SPI operation during wait mode
Selectable MSB-first or LSB-first shifting
Support for both transmit and receive by DMA
Carrier Modulator Timer (CMT)
Four modes of operation
Time; with independent control of high and low times
Baseband
Frequency shift key (FSK)
Direct software control of CMT_IRO signal
Extended space operation in time, baseband, and FSK modes
Selectable input clock divider
Interrupt on end of cycle
Ability to disable CMT_IRO signal and use as timer interrupt
General Purpose Input/Output (GPIO)
Hysteresis and configurable pull up device on all input pins
Independent pin value register to read logic level on digital pin
All GPIO pins can generate IRQ and wake-up events
Configurable drive strength on some output pins
GPIO can be configured to function as a interrupt driven keyboard scanning matrix;
in the 48-pin package there are a total of 25 digital pins
FlexCAN (for KW38 only)
Full implementation of the CAN with Flexible Data Rate (CAN FD) protocol
specification and CAN protocol specification, Version 2.0 B
Flexible Message Buffers (MBs); there are total 32 MBs of 8 bytes data length
each, configurable as Rx or Tx, all supporting standard and extended messages
Programmable clock source to the CAN Protocol Interface, either peripheral clock
or oscillator clock
Capability to select priority between mailboxes and Rx FIFO during matching
process
Feature Descriptions
16 MKW39/38/37 Data Sheet, Rev. 7, 03/2020
NXP Semiconductors
Powerful Rx FIFO ID filtering, capable of matching incoming IDs against either
128 extended, 256 standard, or 512 partial (8 bit) IDs, with up to 32 individual
masking capability
Each individual MB forms by 16, 24, 40, or 72 bytes, depending on the quantity
of data bytes allocated for the message payload: 8, 16, 32, or 64 data bytes,
respectively
2.6 Security Features
Advanced Encryption Standard Accelerator(AES-128 Accelerator)
The Advanced Encryption Standard Accelerator (AESA) module is a standalone
hardware coprocessor capable of accelerating the 128-bit advanced encryption
standard (AES) cryptographic algorithms.
The AESA engine supports the following cryptographic features.
LTC includes the following features:
Cryptographic authentication
Message Authentication Codes (MAC)
Cipher-based MAC (AES-CMAC)
Extended cipher block chaining message authentication code (AES-
XCBC-MAC)
Auto padding
Integrity Check Value(ICV) checking
Authenticated encryption algorithms
Counter with CBC-MAC (AES-CCM)
Symmetric key block ciphers
AES (128-bit keys)
Cipher modes:
AES-128 modes
Electronic Codebook (ECB)
Cipher Block Chaining (CBC)
Counter (CTR)
Secure scan
True Random Number Generator (TRNG)
True Random Number Generator (TRNG) is a hardware accelerator module that
constitutes a high-quality entropy source.
Feature Descriptions
MKW39/38/37 Data Sheet, Rev. 7, 03/2020 17
NXP Semiconductors
TRNG generates a 512-bit (4x 128-bit) entropy as needed by an entropy-consuming
module, such as a deterministic random number generator.
TRNG output can be read and used by a deterministic pseudo-random number
generator (PRNG) implemented in software.
TRNG-PRNG combination achieves NIST-compliant true randomness and
cryptographic-strength random numbers using the TRNG output as the entropy
source.
A fully FIPS 180 compliant solution can be realized using the TRNG together with
a FIPS-compliant deterministic random number generator and the SoC-level
security.
Flash Memory Protection
The on-chip flash memory controller enables the following useful features:
Program flash protection scheme prevents accidental program or erase of stored
data.
Automated, built-in, program and erase algorithms with verify.
Read access to one program flash block is possible while programming or erasing
data in the other program flash block.
3Transceiver Description
Direct Conversion Receiver (Zero IF)
Constant Envelope Transmitter
Low Transmit and Receive Current Consumption
Low bill of material (BOM) radio
3.1 Transceiver Functions
Receive
The receiver architecture is Zero IF (ZIF) where the received signal after passing
through RF front end is down-converted to a baseband signal. The signal is filtered and
amplified before it is fed to analog-to-digital converter. The digital signal then
decimates to a baseband clock frequency before it digitally processes, demodulates and
passes on to packet processing/link-layer processing.
Transmit
Transceiver Description
18 MKW39/38/37 Data Sheet, Rev. 7, 03/2020
NXP Semiconductors
The transmitter transmits GFSK/FSK modulation having power and channel selection
adjustment per user application. After the channel of operation is determined, coarse
and fine-tuning is executed within the Frac-N PLL to engage signal lock. After signal
lock is established, the modulated buffered signal is routed to a multi-stage amplifier
for transmission..
3.2 Key Specifications
KW39/38/37 meets or exceeds all Bluetooth Low Energy version 5.0 performance
specifications. The key specifications for the KW39/38/37 are:
Frequency Band:
ISM Band: 2400 to 2483.5 MHz
MBAN Band: 2360 to 2400 MHz
Full Bluetooth Low Energy version 5.0 modulation scheme:
Symbol rate: Uncoded PHY (1, 2 Mbit/s), Coded PHY (125, 500 kbit/s)
Modulation: GFSK BT=0.5, h=0.5
Receiver sensitivity: –98 dBm, typical for Bluetooth LE 1 Mbit/s, –105 dBm for
Bluetooth LE-LR 125 kbit/s; for all other modes, refer Receiver Feature
Summary.
Programmable transmitter output power: –30 dBm to +5 dBm
Generic FSK modulation scheme:
Symbol rate: 250, 500, 1000, and 2000 kbit/s
Modulation(s): GFSK (modulation index = 0.32, 0.5, 0.7, and 1.0, BT = 0.5), and
MSK
Receiver Sensitivity: Mode and data rate dependent. –101 dBm typical for GFSK
(r=250 kbit/s, BT = 0.5, h = 0.5)
3.3 Channel Map Frequency Plans
Transceiver Description
MKW39/38/37 Data Sheet, Rev. 7, 03/2020 19
NXP Semiconductors
3.3.1 Channel Plan for Bluetooth Low Energy
This section describes the frequency plan / channels associated with 2.4 GHz ISM and
MBAN bands for Bluetooth Low Energy.
2.4 GHz ISM Channel numbering:
Fc=2402 + k * 2 MHz, k=0,.........,39.
MBAN Channel numbering:
Fc=2360 + k in MHz, for k=0,.....,39
where k is the channel number.
Table 2. 2.4 GHz ISM and MBAN frequency plan and channel designations
2.4 GHz ISM1MBAN22.4GHz ISM + MBAN
Channel Freq (MHz) Channel Freq (MHz) Channel Freq (MHz)
0 2402 0 2360 28 2390
1 2404 1 2361 29 2391
2 2406 2 2362 30 2392
3 2408 3 2363 31 2393
4 2410 4 2364 32 2394
5 2412 5 2365 33 2395
6 2414 6 2366 34 2396
7 2416 7 2367 35 2397
8 2418 8 2368 36 2398
9 2420 9 2369 0 2402
10 2422 10 2370 1 2404
11 2424 11 2371 2 2406
12 2426 12 2372 3 2408
13 2428 13 2373 4 2410
14 2430 14 2374 5 2412
15 2432 15 2375 6 2414
16 2434 16 2376 7 2416
17 2436 17 2377 8 2418
18 2438 18 2378 9 2420
19 2440 19 2379 10 2422
20 2442 20 2380 11 2424
21 2444 21 2381 12 2426
22 2446 22 2382 13 2428
23 2448 23 2383 14 2430
Table continues on the next page...
Transceiver Description
20 MKW39/38/37 Data Sheet, Rev. 7, 03/2020
NXP Semiconductors
Table 2. 2.4 GHz ISM and MBAN frequency plan and channel designations (continued)
2.4 GHz ISM1MBAN22.4GHz ISM + MBAN
Channel Freq (MHz) Channel Freq (MHz) Channel Freq (MHz)
24 2450 24 2384 15 2432
25 2452 25 2385 16 2434
26 2454 26 2386 17 2436
27 2456 27 2387 18 2438
28 2458 28 2388 19 2440
29 2460 29 2389 20 2442
30 2462 30 2390 21 2444
31 2464 31 2391 22 2446
32 2466 32 2392 23 2448
33 2468 33 2393 24 2450
34 2470 34 2394 25 2452
35 2472 35 2395 26 2454
36 2474 36 2396 27 2456
37 2476 37 2397 37 2476
38 2478 38 2398 38 2478
39 2480 39 2399 39 2480
1. ISM frequency of operation spans from 2400.0 MHz to 2483.5 MHz
2. Per FCC guideline rules, Bluetooth Low Energy single mode operation is allowed in these channels.
3.3.2 Other Channel Plans
The RF synthesizer can be configured to use any channel frequency between 2.36 and
2.487 GHz.
4Transceiver Electrical Characteristics
4.1 Radio operating conditions
Table 3. Radio operating conditions
Characteristic Symbol Min Typ Max Unit
Input Frequency fin 2.360 2.480 GHz
Table continues on the next page...
Transceiver Electrical Characteristics
MKW39/38/37 Data Sheet, Rev. 7, 03/2020 21
NXP Semiconductors
Table 3. Radio operating conditions (continued)
Characteristic Symbol Min Typ Max Unit
Ambient Temperature Range TA–40 25 105 °C
Maximum RF Input Power Pmax 10 dBm
Crystal Reference Oscillator Frequency
1
fref 26 MHz or 32 MHz
1. The recommended crystal accuracy is ±40 ppm including initial accuracy, mechanical, temperature, and aging factors.
4.2 Receiver Feature Summary
Table 4. Top-Level Receiver Specifications (TA=25 °C, nominal process unless otherwise
noted)
Characteristic1Symbol Min. Typ. Max. Unit
Receiver General Specifications
Supply current power down on VDD_RFx supplies Ipdn 200 1000 nA
Supply current Rx On with DC-DC converter enable
(Buck; VDCDC_IN = 3.6 V) , 2IRxon 6.36 mA
Supply current Rx On with DC-DC converter disabled
(Bypass) 2IRxon 17.78 mA
Input RF Frequency fin 2.360 2.4835 GHz
GFSK Rx Sensitivity(250 kbit/s GFSK-BT=0.5, h=0.5) SENSGFSK –101 dBm
Max Rx RF Input Signal Level RFin,max 10 dBm
Noise Figure for maximum gain mode @ typical
sensitivity
NFHG 7.5 dB
Receiver Signal Strength Indicator Range3RSSIRange –100 54dBm
Receiver Signal Strength Indicator Resolution RSSIRes 1 dB
Typical RSSI variation over frequency –2 2 dB
Typical RSSI variation over temperature –2 2 dB
Narrowband RSSI accuracy5RSSIAcc –3 3 dB
Spurious Emission < 1.6 MHz offset (Measured with 100
kHz resolution and average detector. Device transmit on
RF channel with center frequency fc and spurious power
measured in 1 MHz at RF frequency f), where |f-fc|< 1.6
MHz
–54 dBc
Spurious Emission > 2.5 MHz offset (Measured with 100
kHz resolution and average detector. Device transmit on
RF channel with center frequency fc and spurious power
measured in 1 MHz at RF frequency f), where |f-fc|> 2.5
MHz6
–70 dBc
Bluetooth LE coded 125 kbit/s (Long Range, 8x Spreading)
Bluetooth LE LR 125 kbit/s Sensitivity7SENSBLELR125 –105 dBm
Table continues on the next page...
Transceiver Electrical Characteristics
22 MKW39/38/37 Data Sheet, Rev. 7, 03/2020
NXP Semiconductors
Table 4. Top-Level Receiver Specifications (TA=25 °C, nominal process unless otherwise
noted) (continued)
Characteristic1Symbol Min. Typ. Max. Unit
Bluetooth LE LR 125 kbit/s Co-channel Interference
(Wanted signal at –67 dBm, BER <0.1%. Measurement
resolution 1 MHz).
COSELBLELR125 –2 dB
Adjacent/Alternate Channel Performance8
Bluetooth LE LR 125 kbit/s Adjacent +/–1 MHz
Interference offset (Wanted signal at –67 dBm, BER
<0.1%. Measurement resolution 1 MHz.)
SELBLELR125, 1
MHz
10 dB
Bluetooth LE LR 125 kbit/s Adjacent +/–2 MHz
Interference offset (Wanted signal at –67 dBm, BER
<0.1%. Measurement resolution 1 MHz.)
SELBLELR125, 2
MHz
50 dB
Bluetooth LE LR 125 kbit/s Alternate +/–3 MHz
Interference offset (Wanted signal at –67 dBm, BER
<0.1%. Measurement resolution 1 MHz.)
SELBLELR125, 3
MHz
55 dB
Bluetooth LE LR 125 kbit/s Alternate > +/–5 MHz
Interference offset (Wanted signal at –67 dBm, BER
<0.1%. Measurement resolution 1 MHz.)
SELBLELR125, 5+
MHz
60 dB
Bluetooth LE coded 500 kbit/s (Long Range, 2x Spreading)
Bluetooth LE LR 500 kbit/s Sensitivity7SENSBLELR500 –101 dBm
Bluetooth LE LR 500 kbit/s Co-channel Interference
(Wanted signal at –67 dBm, BER <0.1%. Measurement
resolution 1 MHz).
COSELBLELR500 –4 dB
Adjacent/Alternate Channel Performance8
Bluetooth LE LR 500 kbit/s Adjacent +/–1 MHz
Interference offset (Wanted signal at –67 dBm, BER
<0.1%. Measurement resolution 1 MHz.)
SELBLELR500, 1
MHz
9 dB
Bluetooth LE LR 500 kbit/s Adjacent +/–2 MHz
Interference offset (Wanted signal at –67 dBm, BER
<0.1%. Measurement resolution 1 MHz.)
SELBLELR500, 2
MHz
50 dB
Bluetooth LE LR 500 kbit/s Alternate +/–3 MHz
Interference offset (Wanted signal at –67 dBm, BER
<0.1%. Measurement resolution 1 MHz.)
SELBLELR500, 3
MHz
55 dB
Bluetooth LE LR 500 kbit/s Alternate > +/–5 MHz
Interference offset (Wanted signal at –67 dBm, BER
<0.1%. Measurement resolution 1 MHz.)
SELBLELR500, 5+
MHz
60 dB
Bluetooth LE uncoded 1 Mbit/s
Bluetooth LE 1 Mbit/s Sensitivity7SENSBLE1M –98 dBm
Bluetooth LE 1 Mbit/s Co-channel Interference (Wanted
signal at –67 dBm, BER <0.1%. Measurement resolution
1 MHz).
COSELBLE1M –7 dB
Adjacent/Alternate Channel Selectivity Performance8
Bluetooth LE 1 Mbit/s Selectivity +/–1 MHz Interference
offset (Wanted signal at –67 dBm, BER <0.1%.
Measurement resolution 1 MHz.)
SELBLE1M, 1 MHz 0 dB
Table continues on the next page...
Transceiver Electrical Characteristics
MKW39/38/37 Data Sheet, Rev. 7, 03/2020 23
NXP Semiconductors
Table 4. Top-Level Receiver Specifications (TA=25 °C, nominal process unless otherwise
noted) (continued)
Characteristic1Symbol Min. Typ. Max. Unit
Bluetooth LE 1 Mbit/s Adjacent +/–2 MHz Interference
offset (Wanted signal at –67 dBm, BER <0.1%.
Measurement resolution 1 MHz.)
SELBLE1M, 2 MHz 42 dB
Bluetooth LE 1 Mbit/s Selectivity +/–3 MHz Interference
offset (Wanted signal at –67 dBm, BER <0.1%.
Measurement resolution 1 MHz.)
SELBLE1M, 3 MHz 50 dB
Bluetooth LE 1 Mbit/s Alternate ≥ +/–5 MHz Interference
offset (Wanted signal at –67 dBm, BER <0.1%.
Measurement resolution 1 MHz.)
SELBLE1M, 5+ MHz 55 dB
Intermodulation Performance
Bluetooth LE 1 Mbit/s Intermodulation with continuous
wave interferer at ± 3 MHz and modulated interferer is at
± 6 MHz (Wanted signal at –67 dBm, BER<0.1%.)
IM3-6BLE1M –42 dBm
Bluetooth LE 1 Mbit/s Intermodulation with continuous
wave interferer at ±5 MHz and modulated interferer is at
±10 MHz (Wanted signal at –67 dBm, BER<0.1%.)
IM5-10BLE1M –23 dBm
Blocking Performance
Bluetooth LE 1 Mbit/s Out of band blocking from 30 MHz
to 1000 MHz and 4000 MHz to 5000 MHz (Wanted
signal at –67 dBm, BER<0.1%. Interferer continuous
wave signal.), 9, 10
3 dBm
Bluetooth LE 1 Mbit/s Out of band blocking from 1000
MHz to 2000 MHz and 3000 MHz to 4000 MHz (Wanted
signal at –67 dBm, BER<0.1%. Interferer continuous
wave signal.)
3 dBm
Bluetooth LE 1 Mbit/s Out of band blocking from 2001
MHz to 2339 MHz and 2484 MHz to 2999 MHz (Wanted
signal at –67 dBm, BER<0.1%. Interferer continuous
wave signal.)10
–12 dBm
Bluetooth LE 1 Mbit/s Out of band blocking from 5000
MHz to 12750 MHz (Wanted signal at –67 dBm,
BER<0.1%. Interferer continuous wave signal.)10
5 dBm
Bluetooth LE uncoded 2 Mbit/s (High Speed)
Bluetooth LE 2 Mbit/s Sensitivity7SENSBLE2M –95.5 dBm
Bluetooth LE 2 Mbit/s Co-channel Interference (Wanted
signal at –67 dBm, BER <0.1%. Measurement resolution
2 MHz).
COSELBLE2M –7 dB
Adjacent/Alternate Channel Performance8
Bluetooth LE 2 Mbit/s Adjacent +/–2 MHz Interference
offset (Wanted signal at –67 dBm, BER <0.1%.
Measurement resolution 2 MHz.)
SELBLE2M, 2 MHz 3 dB
Bluetooth LE 2 Mbit/s Alternate +/–4 MHz Interference
offset (Wanted signal at –67 dBm, BER <0.1%.
Measurement resolution 2 MHz.)
SELBLE2M, 4 MHz 42 dB
Table continues on the next page...
Transceiver Electrical Characteristics
24 MKW39/38/37 Data Sheet, Rev. 7, 03/2020
NXP Semiconductors
Table 4. Top-Level Receiver Specifications (TA=25 °C, nominal process unless otherwise
noted) (continued)
Characteristic1Symbol Min. Typ. Max. Unit
Bluetooth LE 2 Mbit/s Selectivity +/–6 MHz Interference
offset (Wanted signal at –67 dBm, BER <0.1%.
Measurement resolution 2 MHz.)
SELBLE2M, 6 MHz 50 dB
Bluetooth LE 2 Mbit/s Selectivity ≥ +/–10 MHz
Interference offset (Wanted signal at –67 dBm, BER
<0.1%. Measurement resolution 2 MHz.)
SELBLE2M, 10+ MHz 55 dB
Intermodulation Performance
Bluetooth LE 2 Mbit/s Intermodulation with continuous
wave interferer at ± 6 MHz and modulated interferer is at
± 12 MHz (Wanted signal at –67 dBm, BER<0.1%.)
IM6-12BLE2M –23 dBm
Bluetooth LE 2 Mbit/s Intermodulation with continuous
wave interferer at ±10 MHz and modulated interferer is
at ±20 MHz (Wanted signal at –67 dBm, BER<0.1%.)
IM10-20BLE2M –24 dBm
Blocking Performance
Bluetooth LE 2 Mbit/s Out of band blocking from 30 MHz
to 1000 MHz and 4000 MHz to 5000 MHz (Wanted
signal at –67 dBm, BER<0.1%. Interferer continuous
wave signal.)9,10
3 dBm
Bluetooth LE 2 Mbit/s Out of band blocking from 1000
MHz to 2000 MHz and 3000 MHz to 4000 MHz (Wanted
signal at –67 dBm, BER<0.1%. Interferer continuous
wave signal.)
–6 dBm
Bluetooth LE 2 Mbit/s Out of band blocking from 2001
MHz to 2339 MHz and 2484 MHz to 2999 MHz (Wanted
signal at –67 dBm, BER<0.1%. Interferer continuous
wave signal.)10
–12 dBm
Bluetooth LE 2 Mbit/s Out of band blocking from 5000
MHz to 12750 MHz (Wanted signal at –67 dBm,
BER<0.1%. Interferer continuous wave signal.)10
5 dBm
1. All the Rx parameters are measured at the KW39/38/37 RF pins.
2. Transceiver power consumption.
3. Narrow-band RSSI mode.
4. With RSSI_CTRL_0.RSSI_ADJ field calibrated to account for antenna to RF input losses.
5. With one point calibration over frequency and temperature.
6. Exceptions allowed for twice the reference clock frequency(fref) multiples.
7. Measured at 0.1% BER using 37 byte long packets in maximum gain mode and nominal conditions.
8. Bluetooth LE adjacent and alternate selectivity performance is measured with modulated interference signals.
9. Exceptions allowed for carrier frequency sub harmonics.
10. Exceptions allowed for carrier frequency harmonics.
Transceiver Electrical Characteristics
MKW39/38/37 Data Sheet, Rev. 7, 03/2020 25
NXP Semiconductors
Table 5. Receiver Specifications with Generic FSK Modulations
Adjacent/Alternate channel selectivity (dB)1
Modulation
type
Data
rate
(kb/s)
Channel
BW (kHz)
Typical
sensitivity
(dBm)
Desired
signal
level
(dBm)
Interferer
at ±1*
channel
BW offset
Interferer
at ±2*
channel
BW offset
Interferer
at ±3*
channel
BW offset
Interferer
at ±4*
channel
BW offset
Co-
channel
GFSK BT =
0.5, h = 0.32
2000 2000 –90.5 –67 39 48 52 54 –9
1000 1000 –93.5 –67 36 47 50 53 –8
GFSK BT =
0.5, h = 0.5
2000 4000 –94 –67 46 56 59 60 –7
1000 2000 –97 –67 44 56 59 60 –7
500 1000 –98.5 –85 43 49 56 57 –6
250 500 –100 –85 39 43 46 50 –6
GFSK, BT =
0.5, h = 0.7
2000 4000 –95 –85 44 53 56 59 –6
1000 2000 –97.5 –85 47 55 59 61 –5
GFSK, BT =
0.5, h = 1.0
1000 1600 –96 –85 50 58 61 64 –4
1. Selectivity measured with an unmodulated blocker.
4.3 Transmit and PLL Feature Summary
Supports constant envelope modulation of 2.4 GHz ISM and 2.36 GHz MBAN
frequency bands
Fast PLL Lock time: < 25 µs
Reference Frequency:
26 MHz and 32 MHz crystals supported for Bluetooth LE and Generic FSK
modes
Table 6. Top-Level Transmitter Specifications (TA=25 °C, nominal process unless otherwise
noted)
Characteristic1Symbol Min. Typ. Max. Unit
Transmitter General Specifications
Supply current power down on VDD_RFx supplies Ipdn 200 nA
Supply current Tx On with PRF = 0 dBm and DC-DC
converter enabled (Buck; VDDDCDC_in = 3.6 V) , 2ITX0dBm 5.7 mA
Supply current Tx On with PRF = 0 dBm and DC-DC
converter disabled (Bypass) 2ITX0dBmb 16 mA
Supply current Tx On with PRF = +3.5 dBm and DC-DC
converter enabled (Buck; VDDDCDC_in = 3.6 V)2ITX3.5dBm 6.9 mA
Supply current Tx On with PRF = +3.5 dBm and DC-DC
converter disabled (Bypass)2ITX3.5dBmb 19 mA
Table continues on the next page...
Transceiver Electrical Characteristics
26 MKW39/38/37 Data Sheet, Rev. 7, 03/2020
NXP Semiconductors
Table 6. Top-Level Transmitter Specifications (TA=25 °C, nominal process unless otherwise
noted) (continued)
Characteristic1Symbol Min. Typ. Max. Unit
Supply current Tx On with PRF = +5 dBm and DC-DC
converter enabled (Buck; VDDDCDC_in = 3.6 V, LDO-HF
bumped)2
ITX5dBm 8.0 mA
Supply current Tx On with PRF = +5 dBm and DC-DC
converter disabled (Bypass, LDO-HF bumped)2ITX5dBmb 21 mA
Output RF Frequency fRFout 2.360 2.4835 GHz
Maximum RF Output Power; LDO-HF bumped 3PRF,maxV +5 dBm
Maximum RF Output power, nominal power supply 4PRF,maxn +3.5 dBm
Minimum RF Output power, nominal power supply 4PRF,minn –30 dBm
RF Output power control range PRFCR 35 dB
Bluetooth LE Maximum Deviation of the Center
Frequency5Fcdev,BLE ±3 kHz
Bluetooth LE Frequency Hopping Support YES
Second Harmonic of Transmit Carrier Frequency (Pout =
PRF,max), 6TXH2 –46 dBm/MHz
Third Harmonic of Transmit Carrier Frequency (Pout =
PRF,max)6TXH3 –50 dBm/MHz
Bluetooth LE uncoded 1 Mbit/s / coded 125 kbit/s / coded 500 kbit/s
Bluetooth LE 1 Mbit/s Tx Output Spectrum 20dB BW TXBWBLE1M 1.0 MHz
Bluetooth LE 1 Mbit/s average frequency deviation using
a 00001111 modulation sequence
Δf1avg,BLE1M 250 kHz
Bluetooth LE 1 Mbit/s average frequency deviation using
a 01010101 modulation sequence
Δf2avg,BLE1M 220 kHz
Bluetooth LE 1 Mbit/s RMS FSK Error FSKerr,BLE1M 3%
Bluetooth LE 1 Mbit/s Adjacent Channel Transmit Power
at 2 MHz offset, 7PRF2MHz,BLE1M –53 dBm
Bluetooth LE 1 Mbit/s Adjacent Channel Transmit Power
at >= 3 MHz offset7PRF3MHz,BLE1M –59 dBm
Bluetooth LE uncoded 2 Mbit/s
Bluetooth LE 2 Mbit/s Tx Output Spectrum 20dB BW TXBWBLE2M 2.2 MHz
Bluetooth LE 2 Mbit/s average frequency deviation using
a 00001111 modulation sequence
Δf1avg,BLE2M 500 kHz
Bluetooth LE 2 Mbit/s average frequency deviation using
a 01010101 modulation sequence
Δf2avg,BLE2M 420 kHz
Bluetooth LE RMS FSK Error FSKerr,BLE2M 4%
Bluetooth LE 2 Mbit/s Adjacent Channel Transmit Power
at 4 MHz offset7PRF2MHz,BLE2M –57 dBm
Bluetooth LE 2 Mbit/s Adjacent Channel Transmit Power
at >= 6 MHz offset7PRF3MHz,BLE2M –60 dBm
1. All the Tx parameters are measured at test hardware SMA connector.
2. Transceiver power consumption.
Transceiver Electrical Characteristics
MKW39/38/37 Data Sheet, Rev. 7, 03/2020 27
NXP Semiconductors
3. Measured at KW39/38/37 RF pins, with Vdd_RFx over 1.44 V and assuming an average Tx duty cycle <=24%. For Tx
output over +3.5 dBm, powered Vdd_RFx has to be higher than 1.44 V.
4. Measured at the KW39/38/37 RF pins.
5. Maximum drift of carrier frequency of the PLL during a Bluetooth LE packet with a nominal 32 MHz reference crystal.
6. Harmonic levels based on recommended 2 component match. Transmit harmonic levels depend on the quality of
matching components. Additional harmonic margin using a third matching component (1x shunt capacitor) is possible.
7. Measured at Pout = +5 dBm and recommended Tx match.
Transmit PA driver output as a function of the PA_POWER[5:0] field when measured
at the IC pins is as follows:
Figure 4. TX Pout (dBm) as function TX-PA Power Code at RF pins
Table 7. Transmit Output Power as a function of PA_POWER[5:0]
TX Pout (dBm)1
PA_POWER[5:0] T = –40 °C T = 25 °C T = 105 °C
1 –30.15 –31.38 –32.25
2 –24.05 –25.25 –26.09
4 –18.06 –19.26 –20.11
6 –14.56 –15.76 –16.61
8 –12.08 –13.29 –14.15
Table continues on the next page...
Transceiver Electrical Characteristics
28 MKW39/38/37 Data Sheet, Rev. 7, 03/2020
NXP Semiconductors
Table 7. Transmit Output Power as a function of PA_POWER[5:0] (continued)
TX Pout (dBm)1
PA_POWER[5:0] T = –40 °C T = 25 °C T = 105 °C
10 –10.16 –11.39 –12.24
12 –8.59 –9.82 –10.67
14 –7.27 –8.50 –9.36
16 –6.16 –7.39 –8.24
18 –5.15 –6.38 –7.24
20 –4.25 –5.48 –6.34
22 –3.44 –4.67 –5.53
24 –2.70 –3.94 –4.81
26 –2.02 –3.26 –4.14
28 –1.39 –2.64 –3.52
30 –0.81 –2.06 –2.95
32 –0.34 –1.58 –2.45
34 0.18 –1.07 –1.95
36 0.66 –0.59 –1.48
38 1.10 –0.15 –1.04
40 1.52 0.27 –0.64
42 1.92 0.65 –0.24
44 2.30 1.03 0.14
46 2.67 1.39 0.49
48 2.99 1.71 0.80
50 3.32 2.04 1.14
52 3.63 2.35 1.44
54 3.92 2.64 1.74
56 4.19 2.91 2.00
58 4.44 3.17 2.27
60 4.68 3.41 2.51
62 4.90 3.64 2.74
1. Tx continuous wave power output at the RF pins with the recommended matching components mounted on PCB.
Transceiver Electrical Characteristics
MKW39/38/37 Data Sheet, Rev. 7, 03/2020 29
NXP Semiconductors
Figure 5. TX Pout (dBm) as function TX-PA Power Code at RF pins (LDO-HF bumped)
Table 8. Transmit Output Power as a function of PA_POWER[5:0] at elevated PA supply
TX Pout (dBm)1
PA_POWER[5:0] T = –40 °C T = 25 °C T = 105 °C
1 –28.48 –29.55 –30.38
2 –22.37 –23.43 –24.23
4 –16.39 –17.45 –18.26
6 –12.88 –13.94 –14.75
8 –10.38 –11.45 –12.27
10 –8.46 –9.53 –10.36
12 –6.89 –7.96 –8.79
14 –5.56 –6.63 –7.47
16 –4.43 –5.50 –6.34
18 –3.41 –4.49 –5.33
20 –2.51 –3.59 –4.43
22 –1.69 –2.77 –3.62
24 –0.94 –2.03 –2.89
Table continues on the next page...
Transceiver Electrical Characteristics
30 MKW39/38/37 Data Sheet, Rev. 7, 03/2020
NXP Semiconductors
Table 8. Transmit Output Power as a function of PA_POWER[5:0] at elevated PA supply
(continued)
TX Pout (dBm)1
PA_POWER[5:0] T = –40 °C T = 25 °C T = 105 °C
26 –0.26 –1.35 –2.22
28 0.36 –0.72 –1.60
30 0.96 –0.14 –1.03
32 1.44 0.34 –0.54
34 1.95 0.85 –0.04
36 2.42 1.32 0.44
38 2.88 1.77 0.88
40 3.32 2.20 1.31
42 3.74 2.62 1.71
44 4.14 3.01 2.09
46 4.50 3.38 2.45
48 4.83 3.71 2.78
50 5.16 4.04 3.11
52 5.46 4.35 3.41
54 5.75 4.64 3.70
56 6.02 4.91 3.96
58 6.26 5.16 4.22
60 6.49 5.40 4.45
62 6.71 5.62 4.67
1. Tx continuous wave power output at the RF pins with the recommended matching components mounted on PCB.
5 System and Power Management
5.1 Power Management
The KW39/38/37 includes internal power management features that can be used to
control the power usage. The power management of the KW39/38/37 includes Power
Management Controller (PMC) and a DC-DC converter which can operate in a buck
or bypass configuration. The PMC is designed such that the RF radio remains in state-
retention while the core is in various stop modes. It makes sure that the device can
stay in low current consumption mode while the RF radio can wake-up quick enough
for communication.
System and Power Management
MKW39/38/37 Data Sheet, Rev. 7, 03/2020 31
NXP Semiconductors
5.1.1 DC-DC Converter
The features of the DC-DC converter include the following:
Single inductor, multiple outputs.
Buck mode (pin selectable; CFG=VDCDC_IN).
Continuous or pulsed operation (hardware/software configurable).
Power switch input to allow external control of power up, and to select DC-DC
bypass mode in which all the SoC power supplies (see Table 4) are externally
provided.
Output signal to indicate power stable. Purpose is for the rest of the chip to be used
as a POR.
Scaled battery output voltage suitable for SAR ADC utilization.
Internal oscillator for support when the reference oscillator is not present.
5.2 Modes of Operation
The Arm Cortex-M0+ core in the KW39/38/37 has three primary modes of operation:
Run, Wait, and Stop modes. For each run mode, there is a corresponding wait and stop
mode. Wait modes are similar to Arm sleep modes. Stop modes are similar to Arm deep
sleep modes. The very low-power run (VLPR) operation mode can drastically reduce
runtime power when the maximum bus frequency is not required to handle the
application needs.
The WFI instruction invokes both wait and stop modes. The primary modes are
augmented in a number of ways to provide lower power based on application needs.
5.2.1 Power modes
The power management controller (PMC) provides multiple power options to allow the
user to optimize power consumption for the level of functionality needed.
Depending on the stop requirements of the user application, various stop modes are
available that provide state retention, partial power down, or full power down of certain
logic and/or memory. I/O states are held in all modes of operation. The following table
compares the various power modes available.
System and Power Management
32 MKW39/38/37 Data Sheet, Rev. 7, 03/2020
NXP Semiconductors
For each run mode, there is a corresponding wait and stop mode. Wait modes are
similar to Arm sleep modes. Stop modes (VLPS, STOP) are similar to Arm sleep deep
mode. The very-low-power run (VLPR) operating mode can drastically reduce
runtime power when the maximum bus frequency is not required to handle the
application needs.
The three primary modes of operation are run, wait, and stop. The WFI instruction
invokes either wait or stop depending on the SLEEPDEEP bit in Cortex-M0+ System
Control Register. The primary modes are augmented in a number of ways to provide
lower power based on application needs.
Table 9. Power modes (At 25 deg C)
Power mode Description CPU
recovery
method
Radio
Normal Run (all
peripherals clock off)
Allows maximum performance of chip. Radio can be active
Normal Wait - via
WFI
Allows peripherals to function, while allowing CPU
to go to sleep reducing power.
Interrupt
Normal Stop - via
WFI
Places chip in static state. Lowest power mode that
retains all registers while maintaining LVD
protection.
Interrupt
PStop2 (Partial Stop
2)
Core and system clocks are gated. Bus clock
remains active. Masters and slaves clocked by bus
clock remain in Run or VLPRun mode. The clock
generators in MCG and the on-chip regulator in the
PMC also remain in Run or VLPRun mode.
Interrupt
PStop1 (Partial Stop
1)
Core, system clocks, and bus clock are gated. All
bus masters and slaves enter Stop mode. The clock
generators in MCG and the on-chip regulator in the
PMC also remain in Run or VLPRun mode.
Interrupt
VLPR (Very Low-
power Run) (all
peripherals off)
Reduced frequency (1 MHz) Flash access mode,
regulator in low-power mode, LVD off. Internal
oscillator can provide low-power 4 MHz source for
core. (Values @2 MHz core/ 1 MHz bus and flash,
module off, execution from flash).
Biasing is disabled when DC-DC is configured for
continuous mode in VLPR/W
Radio operation is possible
only when DC-DC is
configured for continuous
mode.1 However, there may
be insufficient MIPS with a 4
MHz MCU to support much
in the way of radio operation.
VLPW (Very Low-
power Wait) - via WFI
(all peripherals off)
Similar to VLPR, with CPU in sleep to further reduce
power. (Values @4 MHz core/ 1 MHz bus, module
off)
Biasing is disabled when DC-DC is configured for
continuous mode in VLPR/W
Interrupt
VLPS (Very Low-
power Stop) via WFI
Places MCU in static state with LVD operation off.
Lowest power mode with ADC and all pin interrupts
functional. LPTMR, RTC, CMP can be operational.
Interrupt
Table continues on the next page...
System and Power Management
MKW39/38/37 Data Sheet, Rev. 7, 03/2020 33
NXP Semiconductors
Table 9. Power modes (At 25 deg C) (continued)
Power mode Description CPU
recovery
method
Radio
Biasing is disabled when DC-DC is configured for
continuous mode in VLPS.
LLS3 (Low Leakage
Stop)
State retention power mode. LLWU, LPTMR, RTC,
CMP can be operational. All of the radio Sea of
Gates(SOG) logic is in state retention.
Wake-up
Interrupt
Radio SOG is in state
retention in LLSx. The
Bluetooth LE/Generic FSK
DSM2 logic can be active
using the 32 kHz clock
LLS2 (Low Leakage
Stop)
State retention power mode. LLWU, LPTMR, RTC,
CMP can be operational. 16 KB or 32 KB of
programmable RAM can be powered on. All of the
radio SOG logic is in state retention.
Wake-up
Interrupt
VLLS3 (Very Low
Leakage Stop3)
Full SRAM retention. LLWU, LPTMR, RTC, CMP
can be operational. Radio SoG logic is power gated
and Radio Tx/Rx RAM keeps state retention.
Wake-up
Reset
Radio SoG is power gated in
VLLS3/2. Radio Tx/Rx RAM
keeps state retention in
VLLS3 and can be
configurable power gated in
VLLS2. The Bluetooth LE/
Generic FSK DSM logic can
be active using the 32 KHz
clock.
VLLS2 (Very Low
Leakage Stop2)
Partial SRAM retention. 16 KB or 32 KB of
programmable RAM can be powered on. LLWU,
LPTMR, RTC, CMP can be operational. All of the
Radio SoG logic is power gated. Radio Tx/Rx
SRAM can be configurable power gated.
Wake-up
Reset
VLLS1 (Very Low
Leakage Stop1) with
RTC + 32 kHz OSC
All SRAM powered off. The 32-byte system register
file remains powered for customer-critical data.
LLWU, LPTMR, RTC, CMP can be operational.
Radio logic is power gated.
Wake-up
Reset
Radio operation not
supported. The Radio SOG
is power-gated in VLLS1.
Radio state is lost at VLLS1
and lower power states.
VLLS1 (Very Low
Leakage Stop1) with
LPTMR + LPO
All SRAM powered off. The 32-byte system register
file remains powered for customer-critical data.
LLWU, LPTMR, RTC, CMP can be operational.
Wake-up
Reset
VLLS0 (Very Low
Leakage Stop0) with
Brown-out Detection
VLLS0 is not supported with DC-DC.
The 32-byte system register file remains powered
for customer-critical data. Disable all analog
modules in PMC and retains I/O state and DGO
state. LPO disabled, POR brown-out detection
enabled, Pin interrupt only. Radio logic is power
gated.
Wake-up
Reset
Radio operation not
supported. The Radio digital
is power-gated in VLLS0.
VLLS0 (Very Low
Leakage Stop0)
without Brown-out
Detection
VLLS0 is not supported with DC-DC buck
configuration but is supported with bypass
configuration.
The 32-byte system register file remains powered
for customer-critical data. Disable all analog
modules in PMC and retains I/O state and DGO
state. LPO disabled, POR brown-out detection
disabled, Pin interrupt only. Radio logic is power
gated.
Wake-up
Reset
1. Biasing is disabled, but the Flash is in a low-power mode for VLPx, so this configuration can realize some power savings
over use of Run/Wait/Stop.
2. DSM refers to Radio's deep sleep mode. DSM does not refer to the Arm sleep deep mode.
System and Power Management
34 MKW39/38/37 Data Sheet, Rev. 7, 03/2020
NXP Semiconductors
6 KW39/38/37 Electrical Characteristics
6.1 AC electrical characteristics
Unless otherwise specified, propagation delays are measured from the 50% to the 50%
point, and rise and fall times are measured at the 20% and 80% points, as shown in the
following figure.
80%
20%
50%
VIL
Input Signal
VIH
Fall Time
High
Low
Rise Time
Midpoint1
The midpoint is VIL + (VIH - VIL) / 2
Figure 6. Input signal measurement reference
All digital I/O switching characteristics, unless otherwise specified, assume that the
output pins have the following characteristics.
CL=30 pF loads
Slew rate disabled
Normal drive strength
6.2 Nonswitching electrical specifications
6.2.1 Voltage and current operating requirements
Table 10. Voltage and current operating requirements
Symbol Description Min. Max. Unit Notes
VDD Supply voltage 1.71 3.6 V
VDD_1P5 DCDC VDD_1P5 output pin 1.425 3.6 V 1
VDDA Analog supply voltage 1.71 3.6 V
VDD – VDDA VDD-to-VDDA differential voltage –0.1 0.1 V
VSS – VSSA VSS-to-VSSA differential voltage –0.1 0.1 V
Table continues on the next page...
KW39/38/37 Electrical Characteristics
MKW39/38/37 Data Sheet, Rev. 7, 03/2020 35
NXP Semiconductors
Table 10. Voltage and current operating requirements (continued)
Symbol Description Min. Max. Unit Notes
VIH Input high voltage
2.7 V ≤ VDD ≤ 3.6 V
1.7 V ≤ VDD ≤ 2.7 V
0.7 × VDD
0.75 × VDD
V
V
VIL Input low voltage
2.7 V ≤ VDD ≤ 3.6 V
1.7 V ≤ VDD ≤ 2.7 V
0.35 × VDD
0.3 × VDD
V
V
VHYS Input hysteresis 0.06 × VDD V
IICIO IO pin negative DC injection current — single pin
VIN < VSS–0.3V –3 mA
2
IICcont Contiguous pin DC injection current —regional limit,
includes sum of negative injection currents of 16
contiguous pins
Negative current injection –25 mA
VODPU Open drain pullup voltage level VDD VDD V3
VRAM VDD voltage required to retain RAM 1.2 V
1. This limit applies in any DCDC mode.
2. All I/O pins are internally clamped to VSS through an ESD protection diode. There is no diode connection to VDD. If VIN
greater than VIO_MIN (= VSS–0.3 V) is observed, then there is no need to provide current limiting resistors at the pads. If
this limit cannot be observed then a current limiting resistor is required. The negative DC injection current limiting
resistor is calculated as R = (VIO_MIN - VIN)/|IICIO|.
3. Open drain outputs must be pulled to VDD.
6.2.2 LVD and POR operating requirements
Table 11. VDD supply LVD and POR operating requirements
Symbol Description Min. Typ. Max. Unit Notes
VPOR Falling VDD POR detect voltage 0.8 1.1 1.5 V
VPOR_VDD_
1P5
VDD_1P5 POR threshold 1.25 1.31 1.37 V
VLVDH Falling low-voltage detect threshold — high
range (LVDV = 01)
2.48 2.56 2.64 V
VLVW1H
VLVW2H
VLVW3H
VLVW4H
Low-voltage warning thresholds — high range
Level 1 falling (LVWV = 00)
Level 2 falling (LVWV = 01)
Level 3 falling (LVWV = 10)
Level 4 falling (LVWV = 11)
2.62
2.72
2.82
2.92
2.70
2.80
2.90
3.00
2.78
2.88
2.98
3.08
V
V
V
V
1
Table continues on the next page...
KW39/38/37 Electrical Characteristics
36 MKW39/38/37 Data Sheet, Rev. 7, 03/2020
NXP Semiconductors
Table 11. VDD supply LVD and POR operating requirements (continued)
Symbol Description Min. Typ. Max. Unit Notes
VHYSH Low-voltage inhibit reset/recover hysteresis —
high range
±60 mV
VLVDL Falling low-voltage detect threshold — low
range (LVDV=00)
1.54 1.60 1.66 V
VLVW1L
VLVW2L
VLVW3L
VLVW4L
Low-voltage warning thresholds — low range
Level 1 falling (LVWV = 00)
Level 2 falling (LVWV = 01)
Level 3 falling (LVWV = 10)
Level 4 falling (LVWV = 11)
1.74
1.84
1.94
2.04
1.80
1.90
2.00
2.10
1.86
1.96
2.06
2.16
V
V
V
V
1
VHYSL Low-voltage inhibit reset/recover hysteresis —
low range
±40 mV
VBG Bandgap voltage reference 0.97 1.00 1.03 V
tLPO Internal low-power oscillator period — factory
trimmed
900 1000 1100 μs
1. Rising thresholds are falling threshold + hysteresis voltage
6.2.3 Voltage and current operating behaviors
Table 12. Voltage and current operating behaviors
Symbol Description Min. Max. Unit Notes
VOH Output high voltage — Normal drive pad (except
RESET_b)
2.7 V ≤ VDD ≤ 3.6 V, IOH = -5 mA
1.71 V ≤ VDD ≤ 2.7 V, IOH = -2.5 mA
1.71 V ≤ VDD ≤ 2.7 V, IOH = -1 mA
VDD – 0.5
VDD – 0.5
VDD – 0.35
V
V
V
1, 2
VOH Output high voltage — High drive pad (except
RESET_b)
2.7 V ≤ VDD ≤ 3.6 V, IOH = -20 mA
1.71 V ≤ VDD ≤ 2.7 V, IOH = -10 mA
VDD – 0.5
VDD – 0.5
V
V
1, 2
IOHT Output high current total for all ports 100 mA
VOL Output low voltage — Normal drive pad
2.7 V ≤ VDD ≤ 3.6 V, IOL = 5 mA
1.71 V ≤ VDD ≤ 2.7 V, IOL = 2.5 mA
0.5
0.5
V
V
1
VOL Output low voltage — High drive pad
0.5
V
1
Table continues on the next page...
KW39/38/37 Electrical Characteristics
MKW39/38/37 Data Sheet, Rev. 7, 03/2020 37
NXP Semiconductors
Table 12. Voltage and current operating behaviors (continued)
Symbol Description Min. Max. Unit Notes
2.7 V ≤ VDD ≤ 3.6 V, IOL = 20 mA
1.71 V ≤ VDD ≤ 2.7 V, IOL = 10 mA
0.5 V
IOLT Output low current total for all ports 100 mA
IIN Input leakage current (per pin) for full temperature
range
500 nA 3
IIN Input leakage current (per pin) at 25 °C 0.025 μA 3
IIN Input leakage current (total all pins) for full
temperature range
5 μA 3
RPU Internal pullup resistors 20 50 4
1. PTB0-1, PTC1-4, PTC6-7, PTC16-19 I/O have both high drive and normal drive capability selected by the associated
PTx_PCRn[DSE] control bit. All other GPIOs are normal drive only.
2. The reset pin only contains an active pull-up device when configured as the RESET signal or as a GPIO. When
configured as a GPIO output, it acts as a pseudo open drain output.
3. Measured at VDD = 3.6 V.
4. Measured at VDD supply voltage = VDD min and Vinput = VSS.
6.2.4 Power mode transition operating behaviors
All specifications except tPOR and VLLSxRUN recovery times in the following table
assume this clock configuration:
CPU and system clocks = 48 MHz
Bus and flash clock = 24 MHz
FEI clock mode
POR and VLLSxRUN recovery use FEI clock mode at the default CPU and system
frequency of 21 MHz, and a bus and flash clock frequency of 10.5 MHz.
Table 13. Power mode transition operating behaviors
Symbol Description Max. Unit Notes
tPOR After a POR event, amount of time from the point VDD
reaches 1.8 V to execution of the first instruction across the
operating temperature range of the chip.
300 μs 1
VLLS0 RUN
169.0
μs
VLLS1 RUN
168.9
μs
VLLS2 RUN
97.3
μs
Table continues on the next page...
KW39/38/37 Electrical Characteristics
38 MKW39/38/37 Data Sheet, Rev. 7, 03/2020
NXP Semiconductors
Table 13. Power mode transition operating behaviors (continued)
Symbol Description Max. Unit Notes
VLLS3 RUN
97.3
μs
LLS RUN
6.3
μs
VLPS RUN
6.2
μs
STOP RUN
6.2
μs
1. Normal boot (FTFA_FOPT[LPBOOT]=11). When the DC-DC converter is in bypass mode, TPOR will not meet the 300
µs spec when 1) VDD_1P5 < 1.6 V at 25 °C and 125 °C. 2) 1.5V ≤ VDD_1P5 ≤ 1.8 V. For the bypass mode special
case where VDD_1P5 = VDD_1P8, TPOR did not meet the 300 µs maximum spec when the supply slew rate <=100
V/s.
6.2.5 Power consumption operating behaviors
Table 14. Power consumption operating behaviors - Bypass Mode
Mode# Symbol Description Typ. Max. Unit Notes
0 IDDA Analog supply current See note mA 1
1 IDD_RUNCO_CM Run mode current in compute operation - 48
MHz core / 24 MHz flash / bus disabled,
LPTMR running using LPO clock at 1kHz,
CoreMark benchmark code executing from
flash at 3.0 V
6.73
9.94
mA
2, 3
2 IDD_RUNCO Run mode current in compute operation - 48
MHz core / 24 MHz flash / bus clock disabled,
code of while(1) loop executing from flash at
3.0 V
3.84
6.95
mA
3, 4
3 IDD_RUN_CM Run mode current - 48 MHz core/24 MHz bus
and flash, all peripheral clocks disabled,
CoreMark benchmark code executing from
flash at 3.0 V
6.72
9.93
mA
2, 3
4 IDD_RUN Run mode current - 48 MHz core / 24 MHz bus
and flash, all peripheral clocks disabled, code
of while(1) loop executing from flash at 3.0 V
4.46
7.50
mA
3, 4
5 IDD_RUN Run mode current - 48 MHz core / 24 MHz bus
and flash, all peripheral clocks enabled, code of
while(1) loop executing from flash at 3.0 V
at 25 °C
at 70 °C
at 105 °C
5.59
5.72
6.22
6.03
6.96
8.60
mA
mA
mA
3, 4, 5
Table continues on the next page...
KW39/38/37 Electrical Characteristics
MKW39/38/37 Data Sheet, Rev. 7, 03/2020 39
NXP Semiconductors
Table 14. Power consumption operating behaviors - Bypass Mode (continued)
Mode# Symbol Description Typ. Max. Unit Notes
6 IDD_WAIT Wait mode current - core disabled / 48 MHz
system / 24 MHz bus / flash disabled (flash
doze enabled), all peripheral clocks disabled at
3.0 V
2.48 5.70 mA
4
7 IDD_WAIT Wait mode current - core disabled / 24 MHz
system / 24 MHz bus / flash disabled (flash
doze enabled), all peripheral clocks disabled at
3.0 V
1.95 5.20 mA
4
8 IDD_PSTOP2 Stop mode current with partial stop 2 clocking
option - core and system disabled / 10.5 MHz
bus at 3.0 V
2.31 5.60 mA
4
9 IDD_VLPRCO_CM Very-low-power run mode current in compute
operation - 4 MHz core / 0.8 MHz flash / bus
clock disabled, LPTMR running using LPO
clock at 1 kHz reference clock, CoreMark
benchmark code executing from flash at 3.0 V
750.90 2162.15 μA
6
10 IDD_VLPRCO Very-low-power run mode current in compute
operation - 4 MHz core / 0.8 MHz flash / bus
clock disabled, code of while(1) loop executing
from flash at 3.0 V
157.56 1197.82 μA
7
11 IDD_VLPR_CM Very-low-power run mode current -4 MHz
core/0.8 MHz bus and flash, all peripheral
clocks disabled, CoreMark benchmark code
executing from flash at 3.0 V
749.12
2169.25
μA
7
12 IDD_VLPR Very-low-power run mode current - 4 MHz
core / 0.8 MHz bus and flash, all peripheral
clocks disabled, code of while(1) loop
executing from flash at 3.0 V
176.75 1217.35 μA
7
13 IDD_VLPR Very-low-power run mode current - 4 MHz
core / 0.8 MHz bus and flash, all peripheral
clocks enabled, code of while(1) loop executing
from flash at 3.0 V
225.92 1261.85 μA
5, 7
14 IDD_VLPW Very-low-power wait mode current - core
disabled / 4 MHz system / 0.8 MHz bus / flash
disabled (flash doze enabled), all peripheral
clocks disabled at 3.0 V
115.97 988.58 μA 7
15 IDD_STOP Stop mode current at 3.0 V
at 25 °C
at 70 °C
at 105 °C
233.19
334.36
714.91
395.00
1238.67
2854.74
μA
μA
μA
16 IDD_VLPS Very-low-power stop mode current at Bypass
mode(3.0 V),
at 25 °C
at 70 °C
at 105 °C
5.99
44.41
181.39
37.86
239.01
740.69
μA
μA
μA
Table continues on the next page...
KW39/38/37 Electrical Characteristics
40 MKW39/38/37 Data Sheet, Rev. 7, 03/2020
NXP Semiconductors
Table 14. Power consumption operating behaviors - Bypass Mode (continued)
Mode# Symbol Description Typ. Max. Unit Notes
17 IDD_LLS3 Low-leakage stop mode 3 current at Bypass
mode(3.0 V),
at 25 °C
at 70 °C
at 105 °C
3.04
16.27
61.37
7.96
54.57
185.22
μA
μA
μA
18 IDD_LLS2 Low-leakage stop mode 2 current at Bypass
mode(3.0 V),
at 25 °C
at 70 °C
at 105 °C
2.67
13.39
50.32
6.17
49.00
142.43
μA
μA
μA
19 IDD_VLLS3 Very-low-leakage stop mode 3 current at
Bypass mode(3.0 V),
at 25 °C
at 70 °C
at 105 °C
2.23
12.14
46.73
5.35
46.10
126.37
μA
μA
μA
20 IDD_VLLS2_16KB Very-low-leakage stop mode 2 current at
Bypass mode(3.0 V),
at 25 °C
at 70 °C
at 105 °C
1.67
6.58
25.32
2.53
25.82
57.92
μA
μA
μA
21 IDD_VLLS2_32KB Very-low-leakage stop mode 2 current at
Bypass mode (3.0 V) (set
SMC_STOPCTRL[RAM2PO]=1 based on
IDD_VLLS2_16KB configuration),
at 25 °C
at 70 °C
at 105 °C
1.84
8.10
29.47
μA
μA
μA
22 IDD_VLLS2_16KB
_RF_Tx_RAM
Very-low-leakage stop mode 2 current at
Bypass mode (3.0 V) (set
RSIM_CONTROL[TXRAMPO]=1 based on
IDD_VLLS2_16KB configuration),
at 25 °C
at 70 °C
at 105 °C
1.75
7.83
28.32
μA
μA
μA
23 IDD_VLLS2_16KB
_RF_Rx_RAM
Very-low-leakage stop mode 2 current at
Bypass mode (3.0 V) (set
RSIM_CONTROL[RXRAMPO]=1 based on
IDD_VLLS2_16KB configuration),
at 25 °C
at 70 °C
at 105 °C
1.75
7.65
27.73
μA
μA
μA
Table continues on the next page...
KW39/38/37 Electrical Characteristics
MKW39/38/37 Data Sheet, Rev. 7, 03/2020 41
NXP Semiconductors
Table 14. Power consumption operating behaviors - Bypass Mode (continued)
Mode# Symbol Description Typ. Max. Unit Notes
24 IDD_VLLS1 Very-low-leakage stop mode 1 current at
Bypass mode(3.0 V),
at 25 °C
at 70 °C
at 105 °C
917.42
3.24
15.62
1355.71
13.32
32.08
nA
μA
μA
25 IDD_VLLS0 Very-low-leakage stop mode 0 current
(SMC_STOPCTRL[PORPO] = 0) at 3.0 V
at 25 °C
at 70 °C
at 105 °C
467.55
2.78
15.11
998.32
13.05
31.48
nA
μA
μA
26 IDD_VLLS0 Very-low-leakage stop mode 0 current
(SMC_STOPCTRL[PORPO] = 1) at 3.0 V
at 25 °C
at 70 °C
at 105 °C
266.64
2.54
14.78
737.22
13.02
31.12
nA
μA
μA
8
1. The analog supply current is the sum of the active or disabled current for each of the analog modules on the device. See
specifications of each module for its supply current.
2. MCG configured for FEI mode. CoreMark benchmark compiled using IAR 7.70 with optimization level high, optimized for
balanced.
3. Radio is off.
4. MCG configured for FEI mode.
5. Incremental current consumption from peripheral activity is not included.
6. MCG configured for BLPI mode. CoreMark benchmark compiled using IAR 7.70 with optimization level high, optimized
for balanced.
7. MCG configured for BLPI mode.
8. No brownout.
Table 15. Power consumption operating behaviors - Buck Mode
Mode# Symbol Description Typ. Max. Unit Notes
0 IDDA Analog supply current See note mA 1
1 IDD_RUNCO_CM Run mode current in compute operation - 48
MHz core / 24 MHz flash / bus clock disabled,
LPTMR running using LPO clock at 1 kHz,
CoreMark benchmark code executing from flash
at 3.0 V
4.97
mA
2, 3
2 IDD_RUNCO Run mode current in compute operation - 48
MHz core / 24 MHz flash / bus clock disabled,
code of while(1) loop executing from flash at 3.0
V
3.13
mA
2, 3
3 IDD_RUN_CM Run mode current - 48 MHz core/24 MHz bus
and flash, all peripheral clocks disabled,
CoreMark benchmark code executing from flash
at 3.0 V
4.88
mA
2, 3
Table continues on the next page...
KW39/38/37 Electrical Characteristics
42 MKW39/38/37 Data Sheet, Rev. 7, 03/2020
NXP Semiconductors
Table 15. Power consumption operating behaviors - Buck Mode (continued)
Mode# Symbol Description Typ. Max. Unit Notes
4 IDD_RUN Run mode current - 48 MHz core / 24 MHz bus
and flash, all peripheral clocks disabled, code of
while(1) loop executing from flash at 3.0 V
3.37
mA
2, 3
5 IDD_RUN Run mode current - 48 MHz core / 24 MHz bus
and flash, all peripheral clocks enabled, code of
while(1) loop executing from flash at 3.0 V
at 25 °C
at 70 °C
at 105 °C
4.09
4.22
4.60
mA
mA
mA
2, 3, 4
6 IDD_WAIT Wait mode current - core disabled / 48 MHz
system / 24 MHz bus / flash disabled (flash doze
enabled), all peripheral clocks disabled at 3.0 V
2.36 mA
2
7 IDD_WAIT Wait mode current - core disabled / 24 MHz
system / 24 MHz bus / flash disabled (flash doze
enabled), all peripheral clocks disabled at 3.0 V
2.09 mA
2
8 IDD_PSTOP2 Stop mode current with partial stop 2 clocking
option - core and system disabled / 10.5 MHz
bus at 3.0 V
2.32 mA
2
9 IDD_VLPRCO_C
M
Very-low-power run mode current in compute
operation - 4 MHz core / 0.8 MHz flash / bus
clock disabled, CoreMark benchmark code
executing from flash at 3.0 V
563.18
μA
5
10 IDD_VLPRCO Very-low-power run mode current in compute
operation - 4 MHz core / 0.8 MHz flash / bus
clock disabled, code of while(1) loop executing
from flash at 3.0 V
152.88 μA
5
11 IDD_VLPR_CM Very-low-power run mode current - 4 MHz
core/0.8 MHz bus and flash, all peripheral clocks
disabled, CoreMark benchmark code executing
from flash at 3.0 V
558.88
μA
5
12 IDD_VLPR Very-low-power run mode current - 4 MHz core /
0.8 MHz bus and flash, all peripheral clocks
disabled, code of while(1) loop executing from
flash at 3.0 V
150.33 μA
5
13 IDD_VLPR Very-low-power run mode current - 4 MHz core /
0.8 MHz bus and flash, all peripheral clocks
enabled, code of while(1) loop executing from
flash at 3.0 V
207.02 μA
4, 5
14 IDD_VLPW Very-low-power wait mode current - core
disabled / 4 MHz system / 0.8 MHz bus / flash
disabled (flash doze enabled), all peripheral
clocks disabled at 3.0 V
113.53 μA 5
15 IDD_STOP Stop mode current at 3.0 V
at 25 °C
at 70 °C
at 105 °C
1.65
1.82
2.15
2.712
4.728
7.686
mA
mA
mA
Table continues on the next page...
KW39/38/37 Electrical Characteristics
MKW39/38/37 Data Sheet, Rev. 7, 03/2020 43
NXP Semiconductors
Table 15. Power consumption operating behaviors - Buck Mode (continued)
Mode# Symbol Description Typ. Max. Unit Notes
16 IDD_VLPS Very-low-power stop mode current at Buck
mode(3.0 V),
at 25 °C
at 70 °C
at 105 °C
7.34
58.34
276.96
39.203
252.935
836.252
μA
μA
μA
17 IDD_LLS3 Low-leakage stop mode 3 current at Buck
mode(3.0 V),
at 25 °C
at 70 °C
at 105 °C
2.95
20.42
86.84
7.547
58.722
210.696
μA
μA
μA
18 IDD_LLS2 Low-leakage stop mode 2 current at Buck
mode(3.0 V),
at 25 °C
at 70 °C
at 105 °C
2.61
13.90
47.87
5.975
49.512
139.983
μA
μA
μA
19 IDD_VLLS3 Very-low-leakage stop mode 3 current at Buck
mode(3.0 V),
at 25 °C
at 70 °C
at 105 °C
2.17
11.14
40.37
5.283
45.099
120.006
μA
μA
μA
20 IDD_VLLS2_16KB Very-low-leakage stop mode 2 current at Buck
mode(3.0 V),
at 25 °C
at 70 °C
at 105 °C
1.41
5.69
21.24
2.236
24.923
53.843
μA
μA
μA
21 IDD_VLLS2_32KB Very-low-leakage stop mode 2 current at Buck
mode (3.0 V) (set
SMC_STOPCTRL[RAM2PO]=1 based on
IDD_VLLS2_16KB configuration),
at 25 °C
at 70 °C
at 105 °C
1.85
7.92
28.84
μA
μA
μA
22 IDD_VLLS2_16KB
_RF_Tx_RAM
Very-low-leakage stop mode 2 current at Buck
mode (3.0 V) (set
RSIM_CONTROL[TXRAMPO]=1 based on
IDD_VLLS2_16KB configuration),
at 25 °C
at 70 °C
at 105 °C
1.68
7.56
27.97
μA
μA
μA
Table continues on the next page...
KW39/38/37 Electrical Characteristics
44 MKW39/38/37 Data Sheet, Rev. 7, 03/2020
NXP Semiconductors
Table 15. Power consumption operating behaviors - Buck Mode (continued)
Mode# Symbol Description Typ. Max. Unit Notes
23 IDD_VLLS2_16KB
_RF_Rx_RAM
Very-low-leakage stop mode 2 current at Buck
mode (3.0 V) (set
RSIM_CONTROL[RXRAMPO]=1 based on
IDD_VLLS2_16KB configuration),
at 25 °C
at 70 °C
at 105 °C
1.91
6.81
25.64
μA
μA
μA
24 IDD_VLLS1 Very-low-leakage stop mode 1 current at Buck
mode(3.0 V),
at 25 °C
at 70 °C
at 105 °C
976.17
2.98
13.18
1414.459
13.053
29.640
nA
μA
μA
1. The analog supply current is the sum of the active or disabled current for each of the analog modules on the device.
See specification of each module for its supply current.
2. MCG configured for FEI mode.
3. Radio is off.
4. Incremental current consumption from peripheral activity is not included.
5. MCG configured for BLPI mode.
Table 16. Low power mode peripheral adders — typical value (Bypass Mode)
Adder# Symbol Description Temperature (°C) Unit
–40 25 50 70 85
1 IIREFSTEN4MHz 4 MHz internal reference clock (IRC)
adder. Measured by entering STOP or
VLPS mode with 4 MHz IRC enabled.
47.50 47.50 47.51 47.39 47.12 µA
2 IIREFSTEN32KHz 32 kHz internal reference clock (IRC)
adder. Measured by entering STOP
mode with the 32 kHz IRC enabled.
92.82 92.82 92.61 91.89 91.91 µA
3 IEREFSTEN32KHz External 32 kHz crystal clock adder by
means of the RTC bits. Measured by
entering all modes with the crystal
enabled.
VLLS1
VLLS2
VLLS3
LLS2
LLS3
1.24
1.23
1.22
1.22
1.21
1.23
1.22
1.22
1.21
1.21
1.25
1.23
1.12
1.12
1.22
1.29
1.16
1.16
1.28
1.32
1.25
1.26
1.21
1.30
1.26
μA
4 ICMP CMP peripheral adder measured by
placing the device in VLLS1 mode with
CMP enabled using the 6-bit DAC and
a single external input for compare.
Includes 6-bit DAC power
consumption.
21.15 21.15 21.39 21.55 21.76 µA
Table continues on the next page...
KW39/38/37 Electrical Characteristics
MKW39/38/37 Data Sheet, Rev. 7, 03/2020 45
NXP Semiconductors
Table 16. Low power mode peripheral adders — typical value (Bypass Mode) (continued)
Adder# Symbol Description Temperature (°C) Unit
–40 25 50 70 85
5 IRTC RTC peripheral adder measured by
placing the device in VLLS1 mode with
external 32 kHz crystal enabled by
means of the RTC_CR[OSCE] bit and
the RTC ALARM set for 1 minute.
Includes ERCLK32K (32 kHz external
crystal) power consumption.
1.25 1.24 1.25 1.32 1.31 µA
6 ILPUART LPUART peripheral adder measured
by placing the device in STOP or
VLPS mode with selected clock source
waiting for Rx data at 115200 baud
rate. Includes selected clock source
power consumption.
MCGIRCLK (4 MHz internal reference
clock)
58.73
58.73
59.13
59.32
59.67
µA
7 ILPTMR LPTMR peripheral adder measured by
placing the device in VLLS1 mode with
LPTMR enabled using LPO.
31.32
31.30
34.49
65.73
100.58
nA
8 ITPM TPM peripheral adder measured by
placing the device in STOP or VLPS
mode with selected clock source
configured for output compare
generating 100 Hz clock signal. No
load is placed on the I/O generating
the clock signal. Includes selected
clock source and I/O switching
currents.
MCGIRCLK (4 MHz internal reference
clock)
56.93
56.92
56.99
56.92
56.84
µA
9 IBG Bandgap adder when BGEN bit is set
and device is placed in VLPx, LLS, or
VLLSx mode.
90.49 90.48 91.85 91.74 88.16 µA
10 IADC ADC peripheral adder combining the
measured values at VDD and VDDA by
placing the device in STOP or VLPS
mode. ADC is configured for low-
power mode using the internal clock
and continuous conversions.
347.96 347.96 346.12 347.88 346.43 µA
KW39/38/37 Electrical Characteristics
46 MKW39/38/37 Data Sheet, Rev. 7, 03/2020
NXP Semiconductors
6.2.6 Diagram: Typical IDD_RUN operating behavior
The following data is measured from previous devices with same MCU core (Arm®
Cortex-M0+) under these conditions:
No GPIOs toggled
Code execution from flash with cache enabled
For the ALLOFF curve, all peripheral clocks are disabled except FTFA
NOTE
The results in the following graphs are obtained using the
device in Bypass mode.
Figure 7. Run mode supply current vs. core frequency
KW39/38/37 Electrical Characteristics
MKW39/38/37 Data Sheet, Rev. 7, 03/2020 47
NXP Semiconductors
Figure 8. VLPR mode current vs. core frequency
6.2.7 SoC Power Consumption
Full KW39/38/37 system-on-chip (SoC) power consumption is a function of the many
configurations possible for the MCU platform and its peripherals including the 2.4 GHz
radio and the DC-DC converter. A few measured SoC configurations are as follows:
Table 17. SoC Power Consumption
MCU State Flash State Radio State DC-DC State Typical
Average IC
current
Unit
STOP Doze Rx Buck (VDCDC_IN=3.6 V) 8.5 mA
STOP Doze Tx (at 0 dBm) Buck (VDCDC_IN=3.6 V) 7.8 mA
STOP Doze Tx (at +3.5
dBm)
Buck (VDCDC_IN=3.6 V) 9.2 mA
STOP Doze Tx (at +5 dBm)1Buck (VDCDC_IN=3.6 V) 10.3 mA
RUN Enabled Rx Buck (VDCDC_IN=3.6 V) 10.4 mA
RUN Enabled Tx (at 0 dBm) Buck (VDCDC_IN=3.6 V) 9.9 mA
Table continues on the next page...
KW39/38/37 Electrical Characteristics
48 MKW39/38/37 Data Sheet, Rev. 7, 03/2020
NXP Semiconductors
Table 17. SoC Power Consumption (continued)
MCU State Flash State Radio State DC-DC State Typical
Average IC
current
Unit
RUN Enabled Tx (at +3.5
dBm)
Buck (VDCDC_IN=3.6 V) 11.7 mA
RUN Enabled Tx (at +5 dBm)1Buck (VDCDC_IN=3.6 V) 12.8 mA
STOP Doze Rx Disabled/Bypass 17.3 mA
STOP Doze Tx (at 0 dBm) Disabled/Bypass 15.9 mA
STOP Doze Tx (at +3.5
dBm)
Disabled/Bypass 18.3 mA
STOP Doze Tx (at +5 dBm)1Disabled/Bypass 20.3 mA
RUN Enabled Rx Disabled/Bypass 21.5 mA
RUN Enabled Tx (at 0 dBm) Disabled/Bypass 19.9 mA
RUN Enabled Tx (at +3.5
dBm)
Disabled/Bypass 22.4 mA
RUN Enabled Tx (at +5 dBm)1Disabled/Bypass 24.4 mA
1. MCU configured to use an FLL-based 20 MHz clock.
6.2.8 Designing with radiated emissions in mind
To find application notes that provide guidance on designing your system to minimize
interference from radiated emissions:
1. Go to www.nxp.com
2. Perform a keyword search for “KW38, HW guideline, RF system evaluation.”
6.2.9 Capacitance attributes
Table 18. Capacitance attributes
Symbol Description Min. Max. Unit
CIN Input capacitance 7 pF
6.3 Switching electrical specifications
KW39/38/37 Electrical Characteristics
MKW39/38/37 Data Sheet, Rev. 7, 03/2020 49
NXP Semiconductors
6.3.1 Device clock specifications
Table 19. Device clock specifications
Symbol Description Min. Max. Unit
Normal run mode
fSYS System and core clock 48 MHz
fBUS Bus clock 24 MHz
fFLASH Flash clock 24 MHz
fLPTMR LPTMR clock 24 MHz
VLPR and VLPS modes1
fSYS System and core clock 4 MHz
fBUS Bus clock 1 MHz
fFLASH Flash clock 1 MHz
fLPTMR LPTMR clock2 24 MHz
fERCLK External reference clock 16 MHz
fLPTMR_ERCLK LPTMR external reference clock 16 MHz
fTPM TPM asynchronous clock 8 MHz
fLPUART0 LPUART0 asynchronous clock 12 MHz
1. The frequency limitations in VLPR and VLPS modes here override any frequency specification listed in the timing
specification for any other module. These same frequency limits apply to VLPS, whether VLPS entered from RUN or
from VLPR.
2. The LPTMR can be clocked at this speed in VLPR or VLPS only when the source is an external pin.
6.3.2 General switching specifications
These general-purpose specifications apply to all signals configured for GPIO,
LPUART, CAN (for KW38 only), CMT and I2C signals.
Table 20. General switching specifications
Description Min. Max. Unit Notes
GPIO pin interrupt pulse width (digital glitch filter disabled)
— Synchronous path
1.5 Bus clock cycles 1, 2
NMI_b pin interrupt pulse width (analog filter enabled) —
Asynchronous path
200 ns 3
GPIO pin interrupt pulse width (digital glitch filter disabled,
analog filter disabled) — Asynchronous path
20 ns 3
External RESET_b input pulse width (digital glitch filter
disabled)
100 ns
Port rise and fall time(high drive strength)
Slew enabled
25
16
ns
ns
4, 5
Table continues on the next page...
KW39/38/37 Electrical Characteristics
50 MKW39/38/37 Data Sheet, Rev. 7, 03/2020
NXP Semiconductors
Table 20. General switching specifications (continued)
Description Min. Max. Unit Notes
1.71 ≤ VDD ≤ 2.7 V
2.7 ≤ VDD ≤ 3.6 V
Slew disabled
1.71 ≤ VDD ≤ 2.7 V
2.7 ≤ VDD ≤ 3.6 V
8
6
ns
ns
Port rise and fall time(low drive strength)
Slew enabled
1.71 ≤ VDD ≤ 2.7 V
2.7 ≤ VDD ≤ 3.6 V
Slew disabled
1.71 ≤ VDD ≤ 2.7 V
2.7 ≤ VDD ≤ 3.6 V
24
16
10
6
ns
ns
ns
ns
6, 7
1. This is the minimum pulse width that guarantees to pass through the pin synchronization circuitry in run modes.
2. The greater of synchronous and asynchronous timing must be met.
3. This is the minimum pulse width that guarantees to be recognized.
4. PTB0, PTB1, PTC1, PTC2, PTC3, PTC4, PTC6, PTC7, PTC16, PTC17, PTC18, PTC19.
5. 75 pF load.
6. Ports A, B, and C.
7. 25 pF load.
6.4 Thermal specifications
6.4.1 Thermal operating requirements
Table 21. Thermal operating requirements
Symbol Description Min. Max. Unit Notes
TJDie junction temperature –40 125 °C
TAAmbient temperature –40 105 °C 1
1. Maximum TA can be exceeded only if the user ensures that TJ does not exceed the maximum. The simplest method to
determine TJ is: TJ = TA + RθJA × chip power dissipation.
KW39/38/37 Electrical Characteristics
MKW39/38/37 Data Sheet, Rev. 7, 03/2020 51
NXP Semiconductors
6.4.2 Thermal attributes
Table 22. Thermal attributes
Board type Symbol Description 48-pin
"Wettable"
HVQFN
Unit Notes
Four-layer (2s2p) RθJA Thermal resistance, junction to
ambient (natural convection)
21.4 °C/W 1, 2
ΨJT Thermal characterization parameter,
junction to package top (natural
convection)
0.2 °C/W 1, 3
1. Junction temperature is a function of die size, on-chip power dissipation, package thermal resistance, mounting site
(board) temperature, ambient temperature, air flow, power dissipation of other components on the board, and board
construction.
2. Determined according to JEDEC Standard JESD51-2A.
3. Thermal characterization parameter indicating the temperature difference between the package top and the junction
temperature per JEDEC JESD51-2A.
The thermal characterization parameter (ΨJT) is used to determine the junction
temperature with a measurement of the temperature at the top of the package case using
the following equation:
TJ = TT + ΨJT x chip power dissipation
where TT is the thermocouple temperature at the top of the package.
6.5 Peripheral operating requirements and behaviors
6.5.1 Core modules
6.5.1.1 SWD electricals
Table 23. SWD full voltage range electricals
Symbol Description Min. Max. Unit
Operating voltage 1.71 3.6 V
J1 SWD_CLK frequency of operation
Serial wire debug
0
25
MHz
J2 SWD_CLK cycle period 1/J1 ns
J3 SWD_CLK clock pulse width
Serial wire debug
20
ns
J4 SWD_CLK rise and fall times 3 ns
Table continues on the next page...
KW39/38/37 Electrical Characteristics
52 MKW39/38/37 Data Sheet, Rev. 7, 03/2020
NXP Semiconductors
Table 23. SWD full voltage range electricals (continued)
Symbol Description Min. Max. Unit
J9 SWD_DIO input data setup time to SWD_CLK rise 10 ns
J10 SWD_DIO input data hold time after SWD_CLK rise 0 ns
J11 SWD_CLK high to SWD_DIO data valid 32 ns
J12 SWD_CLK high to SWD_DIO high-Z 5 ns
J2
J3 J3
J4 J4
SWD_CLK (input)
Figure 9. Serial wire clock input timing
J11
J12
J11
J9 J10
Input data valid
Output data valid
Output data valid
SWD_CLK
SWD_DIO
SWD_DIO
SWD_DIO
SWD_DIO
Figure 10. Serial wire data timing
6.5.2 System modules
There are no specifications necessary for the device's system modules.
KW39/38/37 Electrical Characteristics
MKW39/38/37 Data Sheet, Rev. 7, 03/2020 53
NXP Semiconductors
6.5.3 Clock modules
6.5.3.1 MCG specifications
Table 24. MCG specifications
Symbol Description Min. Typ. Max. Unit Notes
fints_ft Internal reference frequency (slow clock) —
factory trimmed at nominal VDD and 25 °C
32.768 kHz
fints_t Internal reference frequency (slow clock) —
user trimmed
31.25 39.0625 kHz
Δfdco_res_t Resolution of trimmed average DCO output
frequency at fixed voltage and temperature —
using C3[SCTRIM] and C4[SCFTRIM]
± 0.3 ± 0.6 %fdco 1
Δfdco_t Total deviation of trimmed average DCO output
frequency over voltage and temperature
+0.5/–0.7 ± 3 %fdco 1, 2
Δfdco_t Total deviation of trimmed average DCO output
frequency over fixed voltage and temperature
range of 0–70 °C
± 0.4 ± 1.5 %fdco 1, 2
fintf_ft Internal reference frequency (fast clock) —
factory trimmed at nominal VDD and 25 °C
4 MHz
Δfintf_ft Frequency deviation of internal reference clock
(fast clock) over temperature and voltage —
factory trimmed at nominal VDD and 25 °C
+1/–2 ± 11 %fintf_ft 2
fintf_t Internal reference frequency (fast clock) — user
trimmed at nominal VDD and 25 °C
3 5 MHz
floc_low Loss of external clock minimum frequency —
RANGE = 00
(3/5) x
fints_t
kHz
floc_high Loss of external clock minimum frequency —
RANGE = 01, 10, or 11
(16/5) x
fints_t
kHz
FLL
ffll_ref FLL reference frequency range 31.25 39.0625 kHz
fdco DCO output
frequency range
Low range (DRS = 00)
640 × ffll_ref
20 20.97 25 MHz 3, 4
Mid range (DRS = 01)
1280 × ffll_ref
40 41.94 48 MHz
fdco_t_DMX3
2
DCO output
frequency
Low range (DRS = 00)
732 × ffll_ref
23.99 MHz 5, 6
Mid range (DRS = 01)
1464 × ffll_ref
47.97 MHz
Jcyc_fll FLL period jitter
fVCO = 48 MHz
180 ps 7
tfll_acquire FLL target frequency acquisition time 1 ms 8
KW39/38/37 Electrical Characteristics
54 MKW39/38/37 Data Sheet, Rev. 7, 03/2020
NXP Semiconductors
1. This parameter is measured with the internal reference (slow clock) being used as a reference to the FLL (FEI clock
mode).
2. The deviation is relative to the factory trimmed frequency at nominal VDD and 25 °C, fints_ft.
3. These typical values listed are with the slow internal reference clock (FEI) using factory trim and DMX32 = 0.
4. The resulting system clock frequencies must not exceed their maximum specified values. The DCO frequency
deviation (Δfdco_t) over voltage and temperature must be considered.
5. These typical values listed are with the slow internal reference clock (FEI) using factory trim and DMX32 = 1.
6. The resulting clock frequency must not exceed the maximum specified clock frequency of the device.
7. This specification is based on standard deviation (RMS) of period or frequency.
8. This specification applies to any time the following changes: FLL reference source or reference divider, trim value,
DMX32 bit, DRS bits, or FLL disabled (BLPE, BLPI) to FLL enabled (FEI, FEE, FBE, FBI). If a crystal/resonator is
used as the reference, this specification assumes it is already running.
6.5.3.2 Reference Oscillator Specification
The KW39/38/37 has been designed to meet targeted standard specifications for
frequency error over the life of the part, which includes the temperature, mechanical
and aging effects.
The table below lists the recommended crystal specifications. Note that these are
recommendations only and deviation may be allowed. However, deviations may result
in degraded RF performance or possibly a failure to meet RF protocol certification
standards. Designers must ensure that the crystal(s) they use meet the requirements of
their application.
Table 25. Recommended Crystal and Oscillator Specification
Symbol Description F0 = 32.0 MHz F0 = 26.0 MHz Unit Notes
Min Typ Max Min Typ Max
TAOperating
Temperature
–40 105 –40 105 °C 1
Crystal initial
frequency
tolerance
–10 10 –10 10 ppm 2,3
Crystal frequency
stability and aging
–25 25 –25 24 ppm 2,4
Oscillator variation –12 15 –12 16 ppm 5
Total reference
oscillator tolerance
for Bluetooth LE
applications
–50 50 –50 50 ppm 6
CLLoad capacitance 7 10 13 7 10 13 pF 2, 7
C0Shunt capacitance 0.469 0.67 0.871 0.42 0.6 0.78 pF 2,7
Cm1 Motional
capacitance
1.435 2.05 2.665 1.435 2.05 2.665 fF 2,7
Lm1 Motional
inductance
8.47 12.1 15.73 12.81 18.3 23.79 mH 2,7
Table continues on the next page...
KW39/38/37 Electrical Characteristics
MKW39/38/37 Data Sheet, Rev. 7, 03/2020 55
NXP Semiconductors
Table 25. Recommended Crystal and Oscillator Specification (continued)
Symbol Description F0 = 32.0 MHz F0 = 26.0 MHz Unit Notes
Min Typ Max Min Typ Max
Rm1 Motional
resistance
25 50 35 50 Ohms 2
ESR Equivalent series
resistance
60 60 Ohms 2,8
PdMaximum crystal
drive
10 200 10 200 uW 2
TSTrim sensitivity 6.30 9.00 11.70 6.39 9.12 11.86 ppm/pF 2,7
TOSC Oscillator Startup
Time
500 500 μs 9
1. Full temperature range of this device. A reduced range can be chosen to meet application needs.
2. Recommended crystal specification.
3. Measured at 25 °C.
4. Combination of frequency stability variation over desired temperature range and frequency variation due to aging over
desired lifetime of system.
5. Variation due to temperature, process, and aging of MCU.
6. Sum of crystal initial frequency tolerance, crystal frequency stability and aging, oscillator variation, and PCB
manufacturing variation must not exceed this value.
7. Typical is target. 30% tolerances shown.
8. ESR = Rm1 * (1 + [C0/CL])^2.
9. Time from oscillator enable to clock ready. Dependent on the complete hardware configuration of the oscillator.
Figure 11. Crystal Electrical Model
KW39/38/37 Electrical Characteristics
56 MKW39/38/37 Data Sheet, Rev. 7, 03/2020
NXP Semiconductors
6.5.3.3 32 kHz Oscillator Frequency Specifications
Table 26. 32 kHz Crystal and Oscillator Specifications
Symbol Description Min. Typ. Max. Unit Notes
fosc_lo Crystal
frequency
32.768 kHz
TAOperating
temperature
–40 105 °C 1
Total crystal
frequency
tolerance
–500 500 ppm 2,3
CLLoad
capacitance
12.5 pF 2
ESR Equivalent
series
resistance
80 kOhms 2
tstart Crystal start-up
time
1000 ms 4
fec_extal32 External input
clock frequency
32.768 kHz 5
vec_extal32 External input
clock amplitude
0.7 VDD V6
1. Full temperature range of this device. A reduced range can be chosen to meet application needs.
2. Recommended crystal specification.
3. Sum of crystal initial frequency tolerance, crystal frequency stability, and aging tolerances given by crystal vendor.
4. Time from oscillator enable to clock stable. Dependent on the complete hardware configuration of the oscillator.
5. External oscillator connected to EXTAL32K. XTAL32K must be unconnected.
6. The parameter specified is a peak-to-peak value and VIH and VIL specifications do not apply. The voltage of the
applied clock must be within the range of VSS to VDD.
6.5.4 Memories and memory interfaces
6.5.4.1 Flash (FTFE) electrical specifications
This section describes the electrical characteristics of the FTFE module.
6.5.4.1.1 Flash timing specifications — commands
Table 27. Flash command timing specifications
Symbol Description1Min. Typ. Max. Unit Notes
trd1blk256k
Read 1s Block execution time
256 KB program/data flash
2
ms
trd1sec2k Read 1s Section execution time (2 KB flash) 75 μs
tpgmchk Program Check execution time 95 μs
Table continues on the next page...
KW39/38/37 Electrical Characteristics
MKW39/38/37 Data Sheet, Rev. 7, 03/2020 57
NXP Semiconductors
Table 27. Flash command timing specifications (continued)
Symbol Description1Min. Typ. Max. Unit Notes
trdrsrc Read Resource execution time 40 μs
tpgm8 Program Phrase execution time 90 225 μs
tersblk256k
Erase Flash Block execution time
256 KB program/data flash
125
2125
ms
2
tersscr Erase Flash Sector execution time 12 130 ms 2
tpgmsec2k Program Section execution time (2 KB flash) 10 ms
trd1allx
trd1alln
Read 1s All Blocks execution time
FlexNVM devices
Program flash only devices
3.5
3.5
ms
ms
trdonce Read Once execution time 30 μs
tpgmonce Program Once execution time 90 μs
tersall Erase All Blocks execution time 262 4380 ms 2
tvfykey Verify Backdoor Access Key execution time 35 μs
tersallu Erase All Blocks Unsecure execution time 262 4380 ms 2
tswapx01
tswapx02
tswapx04
tswapx08
tswapx10
Swap Control execution time
control code 0x01
control code 0x02
control code 0x04
control code 0x08
control code 0x10
280
100
100
100
235
235
35
235
μs
μs
μs
μs
μs
tpgmpart32k
tpgmpart256k
Program Partition for EEPROM execution time
32 KB EEPROM backup
256 KB EEPROM backup
252
262
ms
ms
tsetramff
tsetram32k
tsetram256k
Set FlexRAM Function execution time:
Control Code 0xFF
32 KB EEPROM backup
256 KB EEPROM backup
115
0.8
4.5
1.2
6.1
μs
ms
ms
teewr8b32k
teewr8b256k
Byte-write to FlexRAM execution time:
32 KB EEPROM backup
256 KB EEPROM backup
385
1015
1700
3800
μs
μs
3
teewr16b32k
teewr16b256k
16-bit write to FlexRAM execution time:
32 KB EEPROM backup
256 KB EEPROM backup
385
1015
1700
3800
μs
μs
3
teewr32bers 32-bit write to erased FlexRAM location
execution time
360 2000 μs 3
Table continues on the next page...
KW39/38/37 Electrical Characteristics
58 MKW39/38/37 Data Sheet, Rev. 7, 03/2020
NXP Semiconductors
Table 27. Flash command timing specifications (continued)
Symbol Description1Min. Typ. Max. Unit Notes
teewr32b32k
teewr32b256k
32-bit write to FlexRAM execution time:
32 KB EEPROM backup
256 KB EEPROM backup
630
1890
2000
4100
μs
μs
3
1. All command times assume 25 MHz or greater flash clock frequency (for synchronization time between internal/
external clocks).
2. Maximum times for erase parameters based on expectations at cycling end-of-life.
3. First time EERAM writes after a Reset or SETRAM command may incur additional overhead for EEE cleanup,
resulting in up to 2x the times shown.
NOTE
Under certain circumstances maximum times for writes to
FlexRAM may be exceeded. In this case the user or
application may wait, or assert reset to the FTFE module to
stop the operation.
6.5.4.1.2 Reliability specifications (Automotive)
Table 28. NVM reliability specifications
Symbol Description Min. Typ. Max. Unit Notes
Program and Data Flash
tnvmret1k Data retention after up to 1 K cycles 20 years 1
nnvmcyc Cycling endurance 1 K cycles 2
FlexRAM as Emulated EEPROM
tnvmretee Data retention 5 years 1, 3
nnvmwree16
nnvmwree256
Write endurance
EEPROM backup to FlexRAM used ratio =
16
EEPROM backup to FlexRAM used ratio =
256
100 K
1.6 M
writes
writes
4, 5, 6
1. Data retention period per block begins upon initial user factory programming or after each subsequent erase.
2. Program and Erase are supported across product temperature specification. Cycling endurance is per flash sector.
3. Background maintenance operations during normal FlexRAM usage extend effective data retention life beyond 5
years.
4. FlexMemory write endurance specified for 16-bit and/or 32-bit writes to FlexRAM and is supported across product
temperature specification. Greater write endurance may be achieved with larger ratios of EEPROM backup to
FlexRAM.
5. For usage of any EEE driver other than the FlexMemory feature, the endurance specification falls back to the Data
Flash endurance value of 1 K.
6. FlexMemory calculator tool is available on the NXP web site for help in estimating the maximum write endurance
achievable at specific EEPROM/FlexRAM ratios. The "In Spec" portions of the online calculator refer to the NVM
reliability specifications section of the data sheet. This calculator only applies to the Kinetis FlexMemory feature.
KW39/38/37 Electrical Characteristics
MKW39/38/37 Data Sheet, Rev. 7, 03/2020 59
NXP Semiconductors
6.5.4.1.3 Reliability specifications (Industrial)
Table 29. NVM reliability specifications
Symbol Description Min. Typ.1Max. Unit Notes
Program Flash
tnvmretp10k Data retention after up to 10 K cycles 5 50 years
tnvmretp1k Data retention after up to 1 K cycles 20 100 years
nnvmcycp Cycling endurance 10 K 50 K cycles 2
Data Flash
tnvmretd10k Data retention after up to 10 K cycles 5 50 years
tnvmretd1k Data retention after up to 1 K cycles 20 100 years
nnvmcycd Cycling endurance 10 K 50 K cycles 2
FlexRAM as EEPROM
tnvmretee100 Data retention up to 100% of write endurance 5 50 years
tnvmretee10 Data retention up to 10% of write endurance 20 100 years
nnvmcycee Cycling endurance for EEPROM backup 20 K 50 K cycles 2
nnvmwree16
nnvmwree128
nnvmwree512
nnvmwree2k
Write endurance
EEPROM backup to FlexRAM ratio = 16
EEPROM backup to FlexRAM ratio = 128
EEPROM backup to FlexRAM ratio = 512
EEPROM backup to FlexRAM ratio = 2,048
140 K
1.26 M
5 M
20 M
400 K
3.2 M
12.8 M
50 M
writes
writes
writes
writes
3
1. Typical data retention values are based on measured response accelerated at high temperature and derated to a
constant 25 °C use profile. Engineering Bulletin EB618 does not apply to this technology. Typical endurance defined in
Engineering Bulletin EB619.
2. Cycling endurance represents number of program/erase cycles at -40 °C ≤ Tj ≤ 125 °C.
3. Write endurance represents the number of writes to each FlexRAM location at -40 °C ≤Tj ≤ 125 °C influenced by the
cycling endurance of the FlexNVM and the allocated EEPROM backup. Minimum and typical values assume all 16-bit or
32-bit writes to FlexRAM; all 8-bit writes result in 50% less endurance.
6.5.4.1.4 Write endurance to FlexRAM for EEPROM
When the FlexNVM partition code is not set to full data flash, the EEPROM data set
size can be set to any of several non-zero values.
The bytes not assigned to data flash via the FlexNVM partition code are used by the
FTFE to obtain an effective endurance increase for the EEPROM data. The built-in
EEPROM record management system raises the number of program/erase cycles that
can be attained prior to device wear-out by cycling the EEPROM data through a larger
EEPROM NVM storage space.
KW39/38/37 Electrical Characteristics
60 MKW39/38/37 Data Sheet, Rev. 7, 03/2020
NXP Semiconductors
While different partitions of the FlexNVM are available, the intention is that a single
choice for the FlexNVM partition code and EEPROM data set size is used throughout
the entire lifetime of a given application.
6.5.5 Security and integrity modules
There are no specifications necessary for the device's security and integrity modules.
6.5.6 Analog
6.5.6.1 ADC electrical specifications
All other ADC channels meet the 13-bit differential/12-bit single-ended accuracy
specifications. The following specification is defined with the DC-DC converter
operating in Bypass mode.
6.5.6.1.1 16-bit ADC operating conditions
Table 30. 16-bit ADC operating conditions
Symbol Description Conditions Min. Typ.1Max. Unit Notes
VDDA Supply voltage Absolute 1.71 3.6 V
ΔVDDA Supply voltage Delta to VDD (VDD – VDDA) –100 0 +100 mV 2
ΔVSSA Ground voltage Delta to VSS (VSS – VSSA) –100 0 +100 mV 2
VREFH ADC reference
voltage high
1.13 VDDA VDDA V3
VREFL ADC reference
voltage low
VSSA VSSA VSSA V3
VADIN Input voltage 16-bit differential mode
All other modes
VSSA
VSSA
31/32 ×
VREFH
VREFH
V
CADIN Input
capacitance
16-bit mode
8-bit / 10-bit / 12-bit
modes
8
4
10
5
pF
RADIN Input series
resistance
2 5
RAS Analog source
resistance
(external)
13-bit / 12-bit modes
fADCK < 4 MHz
5
4
fADCK ADC conversion
clock frequency
≤ 13-bit mode 1.0 18.0 MHz 5
Table continues on the next page...
KW39/38/37 Electrical Characteristics
MKW39/38/37 Data Sheet, Rev. 7, 03/2020 61
NXP Semiconductors
Table 30. 16-bit ADC operating conditions (continued)
Symbol Description Conditions Min. Typ.1Max. Unit Notes
fADCK ADC conversion
clock frequency
16-bit mode 2.0 12.0 MHz 5
Crate ADC conversion
rate
≤ 13-bit modes
No ADC hardware averaging
Continuous conversions
enabled, subsequent
conversion time
20.000
818.330
kS/s
6
Crate ADC conversion
rate
16-bit mode
No ADC hardware averaging
Continuous conversions
enabled, subsequent
conversion time
37.037
461.467
kS/s
6
1. Typical values assume VDDA = 3.0 V, Temp = 25 °C, fADCK = 1.0 MHz, unless otherwise stated. Typical values are for
reference only, and are not tested in production.
2. DC potential difference.
3. For packages without dedicated VREFH and VREFL pins, VREFH is internally tied to VDDA, and VREFL is internally tied to
VSSA.
4. This resistance is external to MCU. To achieve the best results, the analog source resistance must be kept as low as
possible. The results in this data sheet are derived from a system that had < 8 Ω analog source resistance. The RAS/CAS
time constant should be kept to < 1 ns.
5. To use the maximum ADC conversion clock frequency, CFG2[ADHSC] must be set and CFG1[ADLPC] must be clear.
6. For guidelines and examples of conversion rate calculation, download the ADC calculator tool.
RAS
VAS CAS
ZAS
VADIN
ZADIN
RADIN
RADIN
RADIN
RADIN
CADIN
Pad
leakage
INPUT PIN
INPUT PIN
INPUT PIN
SIMPLIFIED
INPUT PIN EQUIVALENT
CIRCUIT
SIMPLIFIED
CHANNEL SELECT
CIRCUIT
ADC SAR
ENGINE
Figure 12. ADC input impedance equivalency diagram
KW39/38/37 Electrical Characteristics
62 MKW39/38/37 Data Sheet, Rev. 7, 03/2020
NXP Semiconductors
6.5.6.1.2 16-bit ADC electrical characteristics
Table 31. 16-bit ADC characteristics (VREFH = VDDA, VREFL = VSSA)
Symbol Description Conditions1Min. Typ.2Max. Unit Notes
IDDA_ADC Supply current 0.215 1.7 mA 3
fADACK
ADC asynchronous
clock source
ADLPC=1, ADHSC=0
ADLPC=1, ADHSC=1
ADLPC=0, ADHSC=0
ADLPC=0, ADHSC=1
1.2
2.4
3.0
4.4
2.4
4.0
5.2
6.2
3.9
6.1
7.3
9.5
MHz tADACK =
1/fADACK
Sample Time See Reference Manual chapter for sample times
TUE Total unadjusted
error
12-bit modes
<12-bit modes
±4
±1.4
±6.8
±2.1
LSB45
DNL Differential non-
linearity
12-bit mode; Buck
Mode6
12-bit mode; Bypass
Mode
±0.7
±0.5
–1.1 to +1.9
–1.1 to +1.9
LSB45
INL Integral non-
linearity
12-bit mode; Buck
Mode6
12-bit mode; Bypass
Mode
±1.0
±0.6
–2.7 to +1.9
–2.7 to +1.9
LSB45
EFS Full-scale error 12-bit modes
<12-bit modes
–4
–1.4
–5.4
–1.8
LSB4VADIN =
VDDA5
EQQuantization error 16-bit modes
≤13-bit modes
–1 to 0
±0.5
LSB4
ENOB Effective number of
bits
16-bit differential mode; Buck
Mode6
Avg = 32
Avg = 4
16-bit single-ended mode;
Buck Mode6
Avg = 32
Avg = 4
16-bit differential mode;
Bypass Mode
Avg = 32
Avg = 4
16-bit single-ended mode;
Bypass Mode
12
11.25
11
9.5
12.5
11.25
11
12.75
11.75
11.5
10.5
13
12
11.75
bits
7
Table continues on the next page...
KW39/38/37 Electrical Characteristics
MKW39/38/37 Data Sheet, Rev. 7, 03/2020 63
NXP Semiconductors
Table 31. 16-bit ADC characteristics (VREFH = VDDA, VREFL = VSSA) (continued)
Symbol Description Conditions1Min. Typ.2Max. Unit Notes
Avg = 32
Avg = 4
10 10.5
SINAD Signal-to-noise
plus distortion
See ENOB 6.02 × ENOB + 1.76 dB
THD Total harmonic
distortion
16-bit differential mode; Buck
Mode6
Avg = 32
16-bit single-ended mode;
Buck Mode6
Avg = 32
16-bit differential mode;
Bypass Mode
Avg = 32
16-bit single-ended mode;
Bypass Mode
Avg = 32
–90
–88
–89
–87
dB
8
SINAD Signal-to-noise
plus distortion
See ENOB 6.02 × ENOB + 1.76 dB
SFDR Spurious free
dynamic range
distortion
16-bit differential mode; Buck
Mode6
Avg = 32
16-bit single-ended mode;
Buck Mode6
Avg = 32
16-bit differential mode;
Bypass Mode
Avg = 32
16-bit single-ended mode;
Bypass Mode
Avg = 32
85
85
87
85
89
87
94
88
dB
8
EIL Input leakage error IIn × RAS mV IIn =
leakage
current
(see
Voltage
and
current
operating
ratings)
Temp sensor slope Across the full temperature
range of the device
1.67 1.74 1.81 mV/°
C
9
Table continues on the next page...
KW39/38/37 Electrical Characteristics
64 MKW39/38/37 Data Sheet, Rev. 7, 03/2020
NXP Semiconductors
Table 31. 16-bit ADC characteristics (VREFH = VDDA, VREFL = VSSA) (continued)
Symbol Description Conditions1Min. Typ.2Max. Unit Notes
VTEMP25 Temp sensor
voltage
25 °C 706 716 726 mV 9
1. All accuracy numbers assume that the ADC is calibrated with VREFH = VDDA.
2. Typical values assume VDDA = 3.0 V, Temp = 25 °C, fADCK = 2.0 MHz unless otherwise stated. Typical values are for
reference only and are not tested in production.
3. The ADC supply current depends on the ADC conversion clock speed, conversion rate and ADC_CFG1[ADLPC] (low-
power). For lowest power operation, ADC_CFG1[ADLPC] must be set, the ADC_CFG2[ADHSC] bit must be clear with
1 MHz ADC conversion clock speed.
4. 1 LSB = (VREFH - VREFL)/2N.
5. ADC conversion clock < 16 MHz, maximum hardware averaging (AVGE = %1, AVGS = %11).
6. VREFH = Output of Voltage Reference(VREF).
7. Input data is 100 Hz sine wave. ADC conversion clock < 12 MHz.
8. Input data is 1 kHz sine wave. ADC conversion clock < 12 MHz.
9. ADC conversion clock < 3 MHz.
6.5.6.2 Voltage reference electrical specifications
Table 32. VREF full-range operating requirements
Symbol Description Min. Max. Unit Notes
VDDA Supply voltage 1.71 3.6 V
TATemperature –40 to 105 °C
CLOutput load capacitance 100 nF 1, 2
1. CL must be connected to VREF_OUT if the VREF_OUT functionality is being used for either an internal or external
reference.
2. The load capacitance should not exceed +/–25% of the nominal specified CL value over the operating temperature
range of the device.
Table 33. VREF full-range operating behaviors
Symbol Description Min. Typ. Max. Unit Notes
Vout Voltage reference output with factory trim at
nominal VDDA and temperature=25 °C
1.190 1.1950 1.2 V 1
Vout Voltage reference output with user trim at
nominal VDDA and temperature=25 °C
1.1945 1.1950 1.1955 V 1
Vstep Voltage reference trim step 0.5 mV 1
Vtdrift Temperature drift (Vmax -Vmin across the full
temperature range)
20 mV 1
Ibg Bandgap only current 80 µA
Ilp Low-power buffer current 360 uA 1
Ihp High-power buffer current 1 mA 1
ΔVLOAD Load regulation µV 1, 2
Table continues on the next page...
KW39/38/37 Electrical Characteristics
MKW39/38/37 Data Sheet, Rev. 7, 03/2020 65
NXP Semiconductors
Table 33. VREF full-range operating behaviors (continued)
Symbol Description Min. Typ. Max. Unit Notes
current = ± 1.0 mA 200
Tstup Buffer startup time 100 µs
Tchop_osc_st
up
Internal bandgap start-up delay with chop
oscillator enabled
35 ms
Vvdrift Voltage drift (Vmax –Vmin across the full voltage
range)
2 mV 1
1. See the chip's Reference Manual for the appropriate settings of the VREF Status and Control register.
2. Load regulation voltage is the difference between the VREF_OUT voltage with no load vs. voltage with defined load
Table 34. VREF limited-range operating requirements
Symbol Description Min. Max. Unit Notes
TATemperature 0 70 °C
Table 35. VREF limited-range operating behaviors
Symbol Description Min. Max. Unit Notes
Vtdrift Temperature drift (Vmax –Vmin across the limited
temperature range)
15 mV
6.5.6.3 CMP and 6-bit DAC electrical specifications
Table 36. Comparator and 6-bit DAC electrical specifications
Symbol Description Min. Typ. Max. Unit
VDD Supply voltage 1.71 3.6 V
IDDHS Supply current, High-speed mode (EN=1, PMODE=1) 200 μA
IDDLS Supply current, low-speed mode (EN=1, PMODE=0) 20 μA
VAIN Analog input voltage VSS – 0.3 VDD V
VAIO Analog input offset voltage 20 mV
VHAnalog comparator hysteresis1
CR0[HYSTCTR] = 00
CR0[HYSTCTR] = 01
CR0[HYSTCTR] = 10
CR0[HYSTCTR] = 11
5
10
20
30
mV
mV
mV
mV
VCMPOh Output high VDD – 0.5 V
VCMPOl Output low 0.5 V
Table continues on the next page...
KW39/38/37 Electrical Characteristics
66 MKW39/38/37 Data Sheet, Rev. 7, 03/2020
NXP Semiconductors
Table 36. Comparator and 6-bit DAC electrical specifications (continued)
Symbol Description Min. Typ. Max. Unit
tDHS Propagation delay, high-speed mode (EN=1, PMODE=1) 20 50 200 ns
tDLS Propagation delay, low-speed mode (EN=1, PMODE=0) 80 250 600 ns
Analog comparator initialization delay2 40 μs
IDAC6b 6-bit DAC current adder (enabled) 7 μA
INL 6-bit DAC integral non-linearity –0.5 0.5 LSB3
DNL 6-bit DAC differential non-linearity –0.3 0.3 LSB
1. Typical hysteresis is measured with input voltage range limited to 0.6 to VDD–0.6 V.
2. Comparator initialization delay is defined as the time between software writes to change control inputs (Writes to
CMP_DACCR[DACEN], CMP_DACCR[VRSEL], CMP_DACCR[VOSEL], CMP_MUXCR[PSEL], and
CMP_MUXCR[MSEL]) and the comparator output settling to a stable level.
3. 1 LSB = Vreference/64
00
01
10
HYSTCTR
Setting
0.1
10
11
Vin level (V)
CMP Hystereris (V)
3.12.82.5
2.2
1.91.61.3
1
0.70.4
0.05
0
0.01
0.02
0.03
0.08
0.07
0.06
0.04
Figure 13. Typical hysteresis vs. Vin level (VDD = 3.3 V, PMODE = 0)
KW39/38/37 Electrical Characteristics
MKW39/38/37 Data Sheet, Rev. 7, 03/2020 67
NXP Semiconductors
00
01
10
HYSTCTR
Setting
10
11
0.1 3.12.82.5
2.2
1.91.61.3
1
0.70.4
0.1
0
0.02
0.04
0.06
0.18
0.14
0.12
0.08
0.16
Vin level (V)
CMP Hysteresis (V)
Figure 14. Typical hysteresis vs. Vin level (VDD = 3.3 V, PMODE = 1)
6.5.7 Timers
See General switching specifications.
6.5.8 Communication interfaces
6.5.8.1 CAN switching specifications
See General switching specifications.
KW39/38/37 Electrical Characteristics
68 MKW39/38/37 Data Sheet, Rev. 7, 03/2020
NXP Semiconductors
6.5.8.2 DSPI switching specifications (limited voltage range)
The DMA Serial Peripheral Interface (DSPI) provides a synchronous serial bus with
master and slave operations. Many of the transfer attributes are programmable. The
tables below provide DSPI timing characteristics for classic SPI timing modes. See
the DSPI chapter of the Reference Manual for information on the modified transfer
formats used for communicating with slower peripheral devices.
Table 37. Master mode DSPI timing (limited voltage range)
Num Description Min. Max. Unit Notes
Operating voltage 2.7 3.6 V
Frequency of operation 12 MHz
DS1 DSPI_SCK output cycle time 2 x tBUS ns
DS2 DSPI_SCK output high/low time (tSCK/2) − 2 (tSCK/2) + 2 ns
DS3 DSPI_PCSn valid to DSPI_SCK delay (tBUS x 2) −
2
ns 1
DS4 DSPI_SCK to DSPI_PCSn invalid delay (tBUS x 2) −
2
ns 2
DS5 DSPI_SCK to DSPI_SOUT valid 8.5 ns
DS6 DSPI_SCK to DSPI_SOUT invalid –2 ns
DS7 DSPI_SIN to DSPI_SCK input setup 16.2 ns
DS8 DSPI_SCK to DSPI_SIN input hold 0 ns
1. The delay is programmable in SPIx_CTARn[PCSSCK] and SPIx_CTARn[CSSCK].
2. The delay is programmable in SPIx_CTARn[PASC] and SPIx_CTARn[ASC].
DS3 DS4
DS1
DS2
DS7 DS8
First data Last data
DS5
First data Data Last data
DS6
Data
SPI_PCSn
SPI_SCK
(CPOL=0)
SPI_SIN
SPI_SOUT
Figure 15. DSPI classic SPI timing — master mode
Table 38. Slave mode DSPI timing (limited voltage range)
Num Description Min. Max. Unit
Operating voltage 2.7 3.6 V
Frequency of operation 6 MHz
Table continues on the next page...
KW39/38/37 Electrical Characteristics
MKW39/38/37 Data Sheet, Rev. 7, 03/2020 69
NXP Semiconductors
Table 38. Slave mode DSPI timing (limited voltage range) (continued)
Num Description Min. Max. Unit
DS9 DSPI_SCK input cycle time 4 x tBUS ns
DS10 DSPI_SCK input high/low time (tSCK/2) − 2 (tSCK/2) + 2 ns
DS11 DSPI_SCK to DSPI_SOUT valid 21.4 ns
DS12 DSPI_SCK to DSPI_SOUT invalid 0 ns
DS13 DSPI_SIN to DSPI_SCK input setup 2.6 ns
DS14 DSPI_SCK to DSPI_SIN input hold 7.0 ns
DS15 DSPI_SS active to DSPI_SOUT driven 14 ns
DS16 DSPI_SS inactive to DSPI_SOUT not driven 14 ns
First data Last data
First data Data Last data
Data
DS15
DS10 DS9
DS16
DS11
DS12
DS14
DS13
SPI_SS
SPI_SCK
(POL=0)
SPI_SOUT
SPI_SIN
Figure 16. DSPI classic SPI timing — slave mode
6.5.8.3 DSPI switching specifications (full voltage range)
The DMA Serial Peripheral Interface (DSPI) provides a synchronous serial bus with
master and slave operations. Many of the transfer attributes are programmable. The
tables below provide DSPI timing characteristics for classic SPI timing modes. See the
DSPI chapter of the Reference Manual for information on the modified transfer formats
used for communicating with slower peripheral devices.
Table 39. Master mode DSPI timing (full voltage range)
Num Description Min. Max. Unit Notes
Operating voltage 1.71 3.6 V 1
Frequency of operation 12 MHz
DS1 DSPI_SCK output cycle time 2 x tBUS ns
DS2 DSPI_SCK output high/low time (tSCK/2) – 4 (tSCK/2) + 4 ns
Table continues on the next page...
KW39/38/37 Electrical Characteristics
70 MKW39/38/37 Data Sheet, Rev. 7, 03/2020
NXP Semiconductors
Table 39. Master mode DSPI timing (full voltage range) (continued)
Num Description Min. Max. Unit Notes
DS3 DSPI_PCSn valid to DSPI_SCK delay (tBUS x 2) −
4
ns 2
DS4 DSPI_SCK to DSPI_PCSn invalid delay (tBUS x 2) −
4
ns 3
DS5 DSPI_SCK to DSPI_SOUT valid 10 ns
DS6 DSPI_SCK to DSPI_SOUT invalid –1.2 ns
DS7 DSPI_SIN to DSPI_SCK input setup 23.3 ns
DS8 DSPI_SCK to DSPI_SIN input hold 0 ns
1. The DSPI module can operate across the entire operating voltage for the processor, but to run across the full voltage
range the maximum frequency of operation is reduced.
2. The delay is programmable in SPIx_CTARn[PCSSCK] and SPIx_CTARn[CSSCK].
3. The delay is programmable in SPIx_CTARn[PASC] and SPIx_CTARn[ASC].
DS3 DS4
DS1
DS2
DS7 DS8
First data Last data
DS5
First data Data Last data
DS6
Data
SPI_PCSn
SPI_SCK
(CPOL=0)
SPI_SIN
SPI_SOUT
Figure 17. DSPI classic SPI timing — master mode
Table 40. Slave mode DSPI timing (full voltage range)
Num Description Min. Max. Unit
Operating voltage 1.71 3.6 V
Frequency of operation 6 MHz
DS9 DSPI_SCK input cycle time 4 x tBUS ns
DS10 DSPI_SCK input high/low time (tSCK/2) – 4 (tSCK/2) + 4 ns
DS11 DSPI_SCK to DSPI_SOUT valid 29.1 ns
DS12 DSPI_SCK to DSPI_SOUT invalid 0 ns
DS13 DSPI_SIN to DSPI_SCK input setup 3.2 ns
DS14 DSPI_SCK to DSPI_SIN input hold 7.0 ns
DS15 DSPI_SS active to DSPI_SOUT driven 25 ns
DS16 DSPI_SS inactive to DSPI_SOUT not driven 25 ns
KW39/38/37 Electrical Characteristics
MKW39/38/37 Data Sheet, Rev. 7, 03/2020 71
NXP Semiconductors
First data Last data
First data Data Last data
Data
DS15
DS10 DS9
DS16
DS11
DS12
DS14
DS13
SPI_SS
SPI_SCK
(POL=0)
SPI_SOUT
SPI_SIN
Figure 18. DSPI classic SPI timing — slave mode
6.5.8.4 Inter-Integrated Circuit Interface (I2C) timing
Table 41. I 2C timing
Characteristic Symbol Standard Mode Fast Mode Unit
Minimum Maximum Minimum Maximum
SCL Clock Frequency fSCL 0 100 0 400 kHz
Hold time (repeated) START condition.
After this period, the first clock pulse is
generated.
tHD; STA 4 0.6 µs
LOW period of the SCL clock tLOW 4.7 1.3 µs
HIGH period of the SCL clock tHIGH 4 0.6 µs
Set-up time for a repeated START
condition
tSU; STA 4.7 0.6 µs
Data hold time for I2C bus devices tHD; DAT 013.452030.91µs
Data set-up time tSU; DAT 2504 1002, 5 ns
Rise time of SDA and SCL signals tr 1000 20 +0.1Cb5,
6300 ns
Fall time of SDA and SCL signals tf 300 20 +0.1Cb5,
6300 ns
Set-up time for STOP condition tSU; STO 4 0.6 µs
Bus free time between STOP and
START condition
tBUF 4.7 1.3 µs
Pulse width of spikes that must be
suppressed by the input filter
tSP N/A N/A 0 50 ns
1. The master mode I2C deasserts ACK of an address byte simultaneously with the falling edge of SCL. If no slaves
acknowledge this address byte, then a negative hold time can result, depending on the edge rates of the SDA and SCL
lines.
2. The maximum tHD; DAT must be met only if the device does not stretch the LOW period (tLOW) of the SCL signal.
3. Input signal Slew = 10 ns and Output Load = 50 pF.
4. Set-up time in slave-transmitter mode is 1 IP Bus clock period, if the TX FIFO is empty.
KW39/38/37 Electrical Characteristics
72 MKW39/38/37 Data Sheet, Rev. 7, 03/2020
NXP Semiconductors
5. A Fast mode I2C bus device can be used in a Standard mode I2C bus system, but the requirement tSU; DAT ≥ 250 ns
must then be met. This is automatically the case if the device does not stretch the LOW period of the SCL signal. If
such a device does stretch the LOW period of the SCL signal, then it must output the next data bit to the SDA line trmax
+ tSU; DAT = 1000 + 250 = 1250 ns (according to the Standard mode I2C bus specification) before the SCL line is
released.
6. Cb = total capacitance of the one bus line in pF.
Figure 19. Timing definition for fast and standard mode devices on the I2C bus
6.5.8.5 LPUART
See General switching specifications.
6.5.9 Human-machine interfaces (HMI)
6.5.9.1 GPIO
The maximum input voltage on PTC0/1/2/3 is VDD+0.3V. For rest of the GPIO
specification, see General switching specifications.
6.6 DC-DC Converter Operating Requirements
Table 42. DC-DC Converter operating conditions
Characteristic Symbol Min Typ Max Unit
Bypass Mode Supply Voltage (RF and Analog) VDDRF1,
VDDRF2,
VDDRF3, VDD_1P5
1.425 3.6 Vdc
Bypass Mode Supply Voltage (Digital) VDDX, VDCDC_IN,
VDDA
1.71 3.6 Vdc
Buck Mode Supply Voltage 1, 2VDCDC_IN 2.1 3.6 Vdc
DC-DC Inductor
Value 10 μH
Table continues on the next page...
KW39/38/37 Electrical Characteristics
MKW39/38/37 Data Sheet, Rev. 7, 03/2020 73
NXP Semiconductors
Table 42. DC-DC Converter operating conditions (continued)
Characteristic Symbol Min Typ Max Unit
ESR <0.2 <0.5 Ohms
1. In Buck mode, DC-DC converter needs 2.1 V minimum to start, the supply can drop to 1.8 V after DC-DC converter
settles.
2. In Buck mode, DC-DC converter generates 1.8 V at VDD_1P8OUT and 1.5 V at VDD_1P5OUT_PMCIN pins.
VDD_1P8OUT should supply to VDD1, VDD2 and VDDA. VDD_1P5OUT_PMCIN should supply to VDD_RF1 and
VDD_RF2. VDD_RF3 can be either supplied by 1.5 V or 1.8 V.
Table 43. DC-DC Converter Specifications
Characteristics Conditions Symbol Min Typ Max Unit
DC-DC Converter Output
Power (total power output of
1p8V and 1p5V)
VDCDC_IN above 2.7 V Pdcdc_out1 1951mW
VDCDC_IN below 2.7 V Pdcdc_out2 1401mW
Switching Frequency2DCDC_FREQ 2 MHz
Half FET Threshold I_half_FET 5 mA
Double FET Threshold I_double_FET 40 mA
Buck Mode
DC-DC Conversion Efficiency DCDC_EFF_buck 90%
1.8 V Output Voltage
VDD_1P8_buck 1.71 min(VDCD
C_IN_buck
, 3.5)3, 4
Vdc
1.8 V Output Current5, 6
VDD_1P8 = 3.0 V
1.5 V <= VDC_1P5
<= 1.7 V
VDCDC_IN=3.1 V
IDD_1P8_buck1 39 mA
VDD_1P8 = 2.65 V
1.5 V <= VDC_1P5
<= 1.7 V
VDCDC_IN=2.7 V
IDD_1P8_buck2 45 mA
VDD_1P8 = 1.8 V
1.5 V <= VDC_1P5
<= 1.7 V
VDCDC_IN=2.1 V
IDD_1P8_buck3 35 mA
1.5 V Output Voltage Consumed by Radio VDD_1P5_buck 1.5 71.8 Vdc
1.5 V Output Current5, 8IDD_1P5_buck 45 mA
DC-DC Transition Operating
Behavior
LSSRun t_DCDCbuck_LSSR
UN
50 μs
DC-DC Turn on Time TDCDC_ON 2.29 ms
DC-DC Settling Time for
increasing voltage
TDCDC_SETTLE_buck 3.11 ms/V
Table continues on the next page...
KW39/38/37 Electrical Characteristics
74 MKW39/38/37 Data Sheet, Rev. 7, 03/2020
NXP Semiconductors
Table 43. DC-DC Converter Specifications (continued)
Characteristics Conditions Symbol Min Typ Max Unit
DC-DC Settling Time for
decreasing voltage
C = capacitance
attached to the DC-
DC V1P8 output rail.
V1 = the initial output
voltage of the DC-DC
V2 = the final output
voltage of the DC-DC
I2 = the load on the
DC-DC output
expressed in
Amperes.
TDCDC_SETTLE_buck (C*(V1–
V2)/I2
s
1. This is the steady state DC output power. Excessive transient current load from external device will cause 1p8V and
1P5 output voltage unregulated temporary.
2. This is the frequency that is observed at LN and LP pins.
3. The voltage output level can be controlled by programming DCDC_VDD1P8CTRL_TRG field in DCDC_REG3.
4. In Buck mode, the maximum VDD_1P8 output is the minimum of either VDCDC_IN_BUCK minus 50 mV or 3.5 V. For
example, if VDCDC_IN = 2.1 V, maximum VDD_1P8 is 2.05 V. If VDCDC_IN = 3.6 V, maximum VDD_1P8 is 3.5 V.
5. The output current specification in buck mode represents the maximum current the DC-DC converter can deliver. The
KW39/38/37 radio and MCU blocks current consumption is not excluded. The maximum output power of the DC-DC
converter is 140 mW when VDCDC_IN is below 2.7 V and 195 mW when VDCDC_IN is above 2.7 V. The available supply
current for external device depends on the energy consumed by the internal peripherals in KW39/38/37.
6. When using DC-DC in low-power mode (pulsed mode), current load must be less than 1 mA.
7. User needs to program DCDC_VDD1P5CTRL_TRG_BUCK field in DCDC_REG3 register to ensure that a worst case
minimum of 1.5 V is available as VDD_1P5_buck. VDD_1P5 must not be programmed higher than VDD_1P8.
8. 1.5 V is intended to supply power to KW39/38/37. It is not designed to supply power to an external device.
9. Turn on time is measured from the application of power (to DCDC_IN) till the DCDC_REG0[DCDC_STS_DC_OK] bit
is set. Code execution may begin before the DCDC_REG0[DCDC_STS_DC_OK] bit is set. The full device
specification is not guaranteed until the bit sets.
6.7 Ratings
6.7.1 Thermal handling ratings
Table 44. Thermal handling ratings
Symbol Description Min. Max. Unit Notes
TSTG Storage temperature –55 150 °C 1
TSDR Solder temperature, lead-free 260 °C 2
1. Determined according to JEDEC Standard JESD22-A103, High Temperature Storage Life.
2. Determined according to IPC/JEDEC Standard J-STD-020, Moisture/Reflow Sensitivity Classification for Nonhermetic
Solid State Surface Mount Devices.
KW39/38/37 Electrical Characteristics
MKW39/38/37 Data Sheet, Rev. 7, 03/2020 75
NXP Semiconductors
6.7.2 Moisture handling ratings
Table 45. Moisture handling ratings
Symbol Description Min. Max. Unit Notes
MSL Moisture sensitivity level 3 1
1. Determined according to IPC/JEDEC Standard J-STD-020, Moisture/Reflow Sensitivity Classification for Nonhermetic
Solid State Surface Mount Devices.
6.7.3 ESD handling ratings
Table 46. ESD handling ratings
Symbol Description Min. Max. Unit Notes
VHBM Electrostatic discharge voltage, human body model –2000 +2000 V 1
VCDM Electrostatic discharge voltage, charged-device model 2
All pins except the corner pins –500 500 V
Corner pins only –750 750 V
ILAT Latch-up current at ambient temperature of 105 °C –100 +100 mA 3
1. Determined according to JEDEC Standard JS001, Electrostatic Discharge (ESD) Sensitivity Testing Human Body
Model (HBM).
2. Determined according to JEDEC Standard JS002, Field-Induced Charged-Device Model Test Method for Electrostatic-
Discharge-Withstand Thresholds of Microelectronic Components.
3. Determined according to JEDEC Standard JESD78, IC Latch-Up Test.
6.7.4 Voltage and current operating ratings
Table 47. Voltage and current operating ratings
Symbol Description Min. Max. Unit
VDD Digital supply voltage –0.3 3.8 V
IDD Digital supply current 120 mA
VIO IO pin input voltage –0.3 VDD + 0.3 V
IDInstantaneous maximum current single pin limit (applies to
all port pins)
–25 25 mA
VDDA Analog supply voltage VDD – 0.3 VDD + 0.3 V
VIO_DCDC IO pins in the DC-DC voltage domain (DCDC_CFG and
PSWITCH)
GND VDCDC V
7 Pin Diagrams and Pin Assignments
Pin Diagrams and Pin Assignments
76 MKW39/38/37 Data Sheet, Rev. 7, 03/2020
NXP Semiconductors
7.1 KW39/37 Signal Multiplexing and Pin Assignments
The following table shows the signals available on each pin and the locations of these
pins on the devices supported by this document. The Port Control and Interrupt
module is used to select the functionality for each GPIO pin. ALT0 is reserved for
analog functions on some GPIO pins. ALT1 – ALT9 are assigned to the available
digital functions on each GPIO pin. GPIO pins with a default of “disabled” are high
impedance after reset – their input and output buffers are disabled.
48
"Wett
able"
HVQ
FN
Pin Name Default ALT0 ALT1 ALT2 ALT3 ALT4 ALT5 ALT6 ALT7 ALT8 ALT9
1 PTA0 SWD_DIO PTA0/
RF_ACTIVE
SPI0_PCS1 TPM1_CH0 SWD_DIO
2 PTA1 SWD_CLK PTA1/
RF_
STATUS
SPI1_PCS0 TPM1_CH1 SWD_CLK
3 PTA2 RESET_b PTA2 TPM0_CH3 RESET_b
4 PTA16 DISABLED PTA16/
LLWU_P4
SPI1_SOUT TPM0_CH0
5 PTA17 DISABLED PTA17/
LLWU_P5
SPI1_SIN TPM_
CLKIN1
6 PTA18 DISABLED PTA18/
LLWU_P6
SPI1_SCK TPM2_CH0
7 PTA19 ADC0_SE5 ADC0_SE5 PTA19/
LLWU_P7
SPI1_PCS0 TPM2_CH1
8 PSWITCH PSWITCH PSWITCH
9 DCDC_
CFG/
VDCDC_IN
DCDC_
CFG/
VDCDC_IN
DCDC_
CFG/
VDCDC_IN
10 DCDC_LP DCDC_LP DCDC_LP
11 DCDC_GND DCDC_GND DCDC_GND
12 DCDC_LN DCDC_LN DCDC_LN
13 VDD_
1P8OUT
VDD_
1P8OUT
VDD_
1P8OUT
14 DCDC_LN DCDC_LN DCDC_LN
15 VDD_
1P5OUT_
PMCIN
VDD_
1P5OUT_
PMCIN
VDD_
1P5OUT_
PMCIN
16 PTB0 DISABLED PTB0/
LLWU_P8/
RF_
RFOSC_EN
I2C0_SCL CMP0_OUT TPM0_CH1 CLKOUT
Pin Diagrams and Pin Assignments
MKW39/38/37 Data Sheet, Rev. 7, 03/2020 77
NXP Semiconductors
48
"Wett
able"
HVQ
FN
Pin Name Default ALT0 ALT1 ALT2 ALT3 ALT4 ALT5 ALT6 ALT7 ALT8 ALT9
17 PTB1 ADC0_SE1/
CMP0_IN5
ADC0_SE1/
CMP0_IN5
PTB1/
RF_
PRIORITY
DTM_RX I2C0_SDA LPTMR0_
ALT1
TPM0_CH2 CMT_IRO
18 PTB2 ADC0_SE3/
CMP0_IN3
ADC0_SE3/
CMP0_IN3
PTB2/
RF_NOT_
ALLOWED/
LLWU_P9
DTM_TX TPM0_CH0 TPM1_CH0 TPM2_CH0
19 PTB3 ADC0_SE2/
CMP0_IN4
ADC0_SE2/
CMP0_IN4
PTB3/
ERCLK32K/
RF_ACTIVE
TPM0_CH1 CLKOUT TPM1_CH1 RTC_
CLKOUT
TPM2_CH1
20 VDD_0 VDD_0 VDD_0
21 PTB16 EXTAL32K EXTAL32K PTB16 I2C1_SCL TPM2_CH0
22 PTB17 XTAL32K XTAL32K PTB17 I2C1_SDA TPM2_CH1
23 PTB18 NMI_b ADC0_SE4/
CMP0_IN2
PTB18 I2C1_SCL TPM_
CLKIN0
TPM0_CH0 NMI_b
24 ADC0_DP0 ADC0_DP0/
CMP0_IN0
ADC0_DP0/
CMP0_IN0
25 ADC0_DM0 ADC0_DM0/
CMP0_IN1
ADC0_DM0/
CMP0_IN1
26 VREFL/
VSSA
VREFL/
VSSA
VREFL/
VSSA
27 VREFH/
VREF_OUT
VREFH/
VREF_OUT
VREFH/
VREF_OUT
28 VDDA VDDA VDDA
29 XTAL_OUT XTAL_OUT XTAL_OUT
30 EXTAL EXTAL EXTAL
31 XTAL XTAL XTAL
32 VDD_RF3 VDD_RF3 VDD_RF3
33 ANT ANT ANT
34 GANT GANT GANT
35 VDD_RF2 VDD_RF2 VDD_RF2
36 VDD_RF1 VDD_RF1 VDD_RF1
37 PTC1 DISABLED PTC1/
RF_EARLY_
WARNING
ANT_B I2C0_SDA LPUART0_
RTS_b
TPM0_CH2 SPI1_SCK
38 PTC2 DISABLED PTC2/
LLWU_P10
TX_
SWITCH
I2C1_SCL LPUART0_
RX
CMT_IRO DTM_RX SPI1_SOUT
39 PTC3 DISABLED PTC3/
LLWU_P11
RX_
SWITCH
I2C1_SDA LPUART0_
TX
TPM0_CH1 DTM_TX SPI1_SIN
40 PTC4 DISABLED PTC4/
LLWU_P12/
RF_ACTIVE
ANT_A EXTRG_IN LPUART0_
CTS_b
TPM1_CH0 I2C0_SCL SPI1_PCS0
Pin Diagrams and Pin Assignments
78 MKW39/38/37 Data Sheet, Rev. 7, 03/2020
NXP Semiconductors
48
"Wett
able"
HVQ
FN
Pin Name Default ALT0 ALT1 ALT2 ALT3 ALT4 ALT5 ALT6 ALT7 ALT8 ALT9
41 PTC5 DISABLED PTC5/
LLWU_P13/
RF_NOT_
ALLOWED/
RF_
PRIORITY
LPTMR0_
ALT2
LPUART0_
RTS_b
TPM1_CH1
42 PTC6 DISABLED PTC6/
LLWU_P14/
RF_
RFOSC_EN
I2C1_SCL LPUART0_
RX
TPM2_CH0
43 PTC7 DISABLED PTC7/
LLWU_P15
SPI0_PCS2 I2C1_SDA LPUART0_
TX
TPM2_CH1
44 VDD_1 VDD_1 VDD_1
45 PTC16 DISABLED PTC16/
LLWU_P0/
RF_
STATUS
SPI0_SCK I2C0_SDA LPUART0_
RTS_b
TPM0_CH3
46 PTC17 DISABLED PTC17/
LLWU_P1/
RF_EXT_
OSC_EN
SPI0_SOUT I2C1_SCL LPUART0_
RX
DTM_RX
47 PTC18 DISABLED PTC18/
LLWU_P2
SPI0_SIN I2C1_SDA LPUART0_
TX
DTM_TX
48 PTC19 DISABLED PTC19/
LLWU_P3/
RF_EARLY_
WARNING
SPI0_PCS0 I2C0_SCL LPUART0_
CTS_b
49 Ground NA
7.2 KW38 Signal Multiplexing and Pin Assignments
The following table shows the signals available on each pin and the locations of these
pins on the devices supported by this document. The Port Control and Interrupt
module is used to select the functionality for each GPIO pin. ALT0 is reserved for
analog functions on some GPIO pins. ALT1 – ALT9 are assigned to the available
digital functions on each GPIO pin. GPIO pins with a default of “disabled” are high
impedance after reset – their input and output buffers are disabled.
Pin Diagrams and Pin Assignments
MKW39/38/37 Data Sheet, Rev. 7, 03/2020 79
NXP Semiconductors
48
"Wett
able"
HVQ
FN
Pin Name Default ALT0 ALT1 ALT2 ALT3 ALT4 ALT5 ALT6 ALT7 ALT8 ALT9
1 PTA0 SWD_DIO PTA0/
RF_ACTIVE
SPI0_PCS1 TPM1_CH0 SWD_DIO
2 PTA1 SWD_CLK PTA1/
RF_STATUS
SPI1_PCS0 TPM1_CH1 SWD_CLK
3 PTA2 RESET_b PTA2 TPM0_CH3 RESET_b
4 PTA16 DISABLED PTA16/
LLWU_P4
SPI1_SOUT LPUART1_
RTS_b
TPM0_CH0
5 PTA17 DISABLED PTA17/
LLWU_P5
SPI1_SIN LPUART1_
RX
CAN0_TX TPM_
CLKIN1
6 PTA18 DISABLED PTA18/
LLWU_P6
SPI1_SCK LPUART1_
TX
CAN0_RX TPM2_CH0
7 PTA19 ADC0_SE5 ADC0_SE5 PTA19/
LLWU_P7
SPI1_PCS0 LPUART1_
CTS_b
TPM2_CH1
8 PSWITCH PSWITCH PSWITCH
9 DCDC_CFG/
VDCDC_IN
DCDC_CFG/
VDCDC_IN
DCDC_CFG/
VDCDC_IN
10 DCDC_LP DCDC_LP DCDC_LP
11 DCDC_GND DCDC_GND DCDC_GND
12 DCDC_LN DCDC_LN DCDC_LN
13 VDD_
1P8OUT
VDD_
1P8OUT
VDD_
1P8OUT
14 DCDC_LN DCDC_LN DCDC_LN
15 VDD_
1P5OUT_
PMCIN
VDD_
1P5OUT_
PMCIN
VDD_
1P5OUT_
PMCIN
16 PTB0 DISABLED PTB0/
LLWU_P8/
RF_
RFOSC_EN
I2C0_SCL CMP0_OUT TPM0_CH1 CLKOUT CAN0_TX
17 PTB1 ADC0_SE1/
CMP0_IN5
ADC0_SE1/
CMP0_IN5
PTB1/
RF_
PRIORITY
DTM_RX I2C0_SDA LPTMR0_
ALT1
TPM0_CH2 CMT_IRO CAN0_RX
18 PTB2 ADC0_SE3/
CMP0_IN3
ADC0_SE3/
CMP0_IN3
PTB2/
RF_NOT_
ALLOWED/
LLWU_P9
DTM_TX TPM0_CH0 TPM1_CH0 TPM2_CH0
19 PTB3 ADC0_SE2/
CMP0_IN4
ADC0_SE2/
CMP0_IN4
PTB3/
ERCLK32K/
RF_ACTIVE
LPUART1_
RTS_b
TPM0_CH1 CLKOUT TPM1_CH1 RTC_
CLKOUT
TPM2_CH1
20 VDD_0 VDD_0 VDD_0
21 PTB16 EXTAL32K EXTAL32K PTB16 LPUART1_
RX
I2C1_SCL TPM2_CH0
22 PTB17 XTAL32K XTAL32K PTB17 LPUART1_
TX
I2C1_SDA TPM2_CH1
Pin Diagrams and Pin Assignments
80 MKW39/38/37 Data Sheet, Rev. 7, 03/2020
NXP Semiconductors
48
"Wett
able"
HVQ
FN
Pin Name Default ALT0 ALT1 ALT2 ALT3 ALT4 ALT5 ALT6 ALT7 ALT8 ALT9
23 PTB18 NMI_b ADC0_SE4/
CMP0_IN2
PTB18 LPUART1_
CTS_b
I2C1_SCL TPM_
CLKIN0
TPM0_CH0 NMI_b
24 ADC0_DP0 ADC0_DP0/
CMP0_IN0
ADC0_DP0/
CMP0_IN0
25 ADC0_DM0 ADC0_DM0/
CMP0_IN1
ADC0_DM0/
CMP0_IN1
26 VREFL/
VSSA
VREFL/
VSSA
VREFL/
VSSA
27 VREFH/
VREF_OUT
VREFH/
VREF_OUT
VREFH/
VREF_OUT
28 VDDA VDDA VDDA
29 XTAL_OUT XTAL_OUT XTAL_OUT
30 EXTAL EXTAL EXTAL
31 XTAL XTAL XTAL
32 VDD_RF3 VDD_RF3 VDD_RF3
33 ANT ANT ANT
34 GANT GANT GANT
35 VDD_RF2 VDD_RF2 VDD_RF2
36 VDD_RF1 VDD_RF1 VDD_RF1
37 PTC1 DISABLED PTC1/
RF_EARLY_
WARNING
ANT_B I2C0_SDA LPUART0_
RTS_b
TPM0_CH2 SPI1_SCK
38 PTC2 DISABLED PTC2/
LLWU_P10
TX_SWITCH I2C1_SCL LPUART0_
RX
CMT_IRO DTM_RX SPI1_SOUT
39 PTC3 DISABLED PTC3/
LLWU_P11
RX_
SWITCH
I2C1_SDA LPUART0_
TX
TPM0_CH1 DTM_TX SPI1_SIN CAN0_TX
40 PTC4 DISABLED PTC4/
LLWU_P12/
RF_ACTIVE
ANT_A EXTRG_IN LPUART0_
CTS_b
TPM1_CH0 I2C0_SCL SPI1_PCS0 CAN0_RX
41 PTC5 DISABLED PTC5/
LLWU_P13/
RF_NOT_
ALLOWED/
RF_
PRIORITY
LPTMR0_
ALT2
LPUART0_
RTS_b
TPM1_CH1
42 PTC6 DISABLED PTC6/
LLWU_P14/
RF_
RFOSC_EN
I2C1_SCL LPUART0_
RX
TPM2_CH0
43 PTC7 DISABLED PTC7/
LLWU_P15
SPI0_PCS2 I2C1_SDA LPUART0_
TX
TPM2_CH1
44 VDD_1 VDD_1 VDD_1
Pin Diagrams and Pin Assignments
MKW39/38/37 Data Sheet, Rev. 7, 03/2020 81
NXP Semiconductors
48
"Wett
able"
HVQ
FN
Pin Name Default ALT0 ALT1 ALT2 ALT3 ALT4 ALT5 ALT6 ALT7 ALT8 ALT9
45 PTC16 DISABLED PTC16/
LLWU_P0/
RF_STATUS
SPI0_SCK I2C0_SDA LPUART0_
RTS_b
TPM0_CH3 LPUART1_
RTS_b
46 PTC17 DISABLED PTC17/
LLWU_P1/
RF_EXT_
OSC_EN
SPI0_SOUT I2C1_SCL LPUART0_
RX
DTM_RX LPUART1_
RX
47 PTC18 DISABLED PTC18/
LLWU_P2
SPI0_SIN I2C1_SDA LPUART0_
TX
DTM_TX LPUART1_
TX
48 PTC19 DISABLED PTC19/
LLWU_P3/
RF_EARLY_
WARNING
SPI0_PCS0 I2C0_SCL LPUART0_
CTS_b
LPUART1_
CTS_b
49 Ground NA
7.3 KW39/38/37 Pinouts
KW39/38/37 device pinouts are shown in the figure below.
Pin Diagrams and Pin Assignments
82 MKW39/38/37 Data Sheet, Rev. 7, 03/2020
NXP Semiconductors
DCDC_LN
DCDC_GND
DCDC_LP
DCDC_CFG/VDCDC_IN
PSWITCH
PTA19
PTA18
PTA17
PTA16
PTA2
PTA1
PTA0
12
11
10
9
8
7
6
5
4
3
2
1
48
47
46
45
44
43
42
41
40
39
38
37
PTC19
PTC18
PTC17
PTC16
VDD_1
PTC7
PTC6
PTC5
PTC4
PTC3
PTC2
PTC1
36
35
34
33
VDD_RF1
VDD_RF2
GANT
ANT
32
31
30
29
28
27
26
25
VDD_RF3
XTAL
EXTAL
XTAL_OUT
VDDA
VREFH/VREF_OUT
VREFL/VSSA
ADC0_DM0
VDD_0
PTB3
PTB2
PTB1
24
23
22
21
20
19
18
17
PTB0
VDD_1P5OUT_PMCIN
DCDC_LN
VDD_1P8OUT
16
15
14
13
ADC0_DP0
PTB18
PTB17
PTB16
49
*pin 49 is ground
Figure 20. 48-pin "Wettable" HVQFN pinout diagram
7.4 Module Signal Description Tables
The following sections correlate the chip-level signal name with the signal name used
in the chapter of the module. They also briefly describe the signal function and
direction.
Pin Diagrams and Pin Assignments
MKW39/38/37 Data Sheet, Rev. 7, 03/2020 83
NXP Semiconductors
7.4.1 Core Modules
This section contains tables describing the core module signal descriptions.
Table 48. SWD Module Signal Descriptions
SoC Signal Name Module Signal Name Description I/O
SWD_DIO SWD_DIO Serial Wire Debug Data
Input/Output1I/O
SWD_CLK SWD_CLK Serial Wire Clock2I
1. Pulled up internally by default
2. Pulled down internally by default
7.4.2 Radio Modules
This section contains tables describing the radio signals.
Table 49. Radio Module Signal Descriptions
Module Signal Name Pin Direction Pin Name Pin Description
ANT O ANT Antenna
ANT_A O ANT_A Antenna selection A for Front End Module support
ANT_B O ANT_B Antenna selection B for Front End Module support
RF_ACTIVE O RF_ACTIVE An output which is asserted prior to any Radio event
and remains asserted for the duration of the event.
DTM_RX I DTM_RX Direct Test Mode Receive
DTM_TX O DTM_TX Direct Test Mode Transmit
GANT I GANT Antenna ground
RF_STATUS O RF_STATUS An output which indicates when the Radio is in an
Rx or Tx event; software can also control this signal
directly.
RF_PRIORITY O RF_PRIORITY An output which indicates to the external WiFi
device that the Radio event is a high priority and it
needs access to the 2.4 GHz antenna.
RF_EARLY_WARNING O RF_EARLY_WARNING Bluetooth LE LL generated signal which can be
used to wake an external sensor to make a
measurement before a Bluetooth LE event.
RF_NOT_ALLOWED I RF_NOT_ALLOWED External signal which causes the internal Radio to
cease radio activity.
RF_TX_CONF I RF_TX_CONF Signal from an external Radio which indicates the
availability of the 2.4 GHz antenna to the internal
Radio.
NOTE: This is a GPIO, not a dedicated PIN.
RX_SWITCH O RX_SWITCH Front End Module receive mode signal.
TX_SWITCH O TX_SWITCH Front End Module transmit mode signal.
Pin Diagrams and Pin Assignments
84 MKW39/38/37 Data Sheet, Rev. 7, 03/2020
NXP Semiconductors
Table 50. Radio Module Miscellaneous Pin Descriptions
Pin Name Pad Direction Pin Name Pin Description
RF_INT_OSC_EN I RF_RFOSC_EN External request to turn on the Radio's internal RF
oscillator.
RF_EXT_OSC_EN O RF_EXT_OSC_EN Internal request to turn on an External oscillator for
use by the internal Radio. The request can also be
from the SoC if it is using the RF oscillator as its
clock.
7.4.3 System Modules
This section contains tables describing the system signals.
Table 51. System Module Signal Descriptions
SoC Signal Name Module Signal Name Description I/O
NMI_b Non-maskable interrupt I
RESET_b Reset bidirectional signal I/O
VDD_[1:0] VDD Power supply I
Ground VSS Ground I
VDD_RF[3:1] VDD_RF Radio power supply I
VDCDC_IN VDCDC_IN VDCDC_IN I
VDD_1P8OUT VDD_1P8 DC-DC 1.8 V Regulated
Output / Input in bypass
I/O
VDD_1P5OUT_PMCIN VDD_1P5/VDD_PMC DC-DC 1.5 V Regulated
Output / PMC Input in
bypass
I/O
PSWITCH PSWITCH DC-DC enable switch I
DCDC_CFG DCDC_CFG DC-DC switch mode select I
DCDC_LP DCDC_LP DC-DC inductor input
positive
I/O
DCDC_LN DCDC_LN DC-DC inductor input
negative
I/O
DCDC_GND DCDC_GND DC-DC ground I
Table 52. LLWU Module Signal Descriptions
SoC Signal Name Module Signal Name Description I/O
LLWU_P[15:0] LLWU_P[15:0] Wake-up inputs I
Pin Diagrams and Pin Assignments
MKW39/38/37 Data Sheet, Rev. 7, 03/2020 85
NXP Semiconductors
7.4.4 Clock Modules
This section contains tables for Clock signal descriptions.
Table 53. Clock Module Signal Descriptions
SoC Signal Name Module Signal Name Description I/O
EXTAL EXTAL 26 MHz/32 MHz External
clock/Oscillator input
I
XTAL XTAL 26 MHz/32 MHz Oscillator
input
I
XTAL_OUT XTAL_OUT 26 MHz/32 MHz Clock output O
XTAL_OUT_EN XTAL_OUT_ENABLE 26 MHz/32 MHz Clock output
enable for XTAL_OUT
I
EXTAL32K EXTAL32K 32 kHz External clock/
Oscillator input
I
XTAL32K XTAL32K 32 kHz Oscillator input I
CLKOUT CLKOUT Internal clocks monitor O
7.4.5 Analog Modules
This section contains tables for Analog signal descriptions.
Table 54. ADC0 Signal Descriptions
SoC Signal Name Module Signal Name Description I/O
ADC0_DM0 DADM0 ADC Channel 0 Differential
Input Negative
I
ADC0_DP0 DADP0 ADC Channel 0 Differential
Input Positive
I
ADC0_SE[5:1] AD[5:1] ADC Channel 0 Single-ended
Input n
I
VREFH VREFSH Voltage Reference Select
High
I
VDDA VDDA Analog Power Supply I
VSSA VSSA Analog Ground I
Table 55. CMP0 Signal Descriptions
SoC Signal Name Module Signal Name Description I/O
CMP0_IN[5:0] IN[5:0] Analog voltage inputs I
CMP0_OUT CMP0 Comparator output O
Pin Diagrams and Pin Assignments
86 MKW39/38/37 Data Sheet, Rev. 7, 03/2020
NXP Semiconductors
Table 56. VREF Signal Descriptions
SoC Signal Name Module Signal Name Description I/O
VREF_OUT VREF_OUT Internally generated voltage
reference output
O
7.4.6 Timer Modules
This section contains tables describing timer module signals.
Table 57. TPM0 Module Signal Descriptions
SoC Signal Name Module Signal Name Description I/O
TPM_CLKIN[1:0] TPM_EXTCLK External clock I
TPM0_CH[3:0] TPM_CH[3:0] TPM channel I/O
Table 58. TPM1 Module Signal Descriptions
SoC Signal Name Module Signal Name Description I/O
TPM_CLKIN[1:0] TPM_EXTCLK External clock I
TPM1_CH[1:0] TPM_CH[1:0] TPM channel I/O
Table 59. TPM2 Module Signal Descriptions
SoC Signal Name Module Signal Name Description I/O
TPM_CLKIN[1:0] TPM_EXTCLK External clock I
TPM2_CH[1:0] TPM_CH[1:0] TPM channel I/O
Table 60. LPTMR0 Module Signal Descriptions
SoC Signal Name Module Signal Name Description I/O
LPTMR0_ALT[2:1] LPTMR0_ALT[2:1] Pulse counter input pin I
Table 61. RTC Module Signal Descriptions
SoC Signal Name Module Signal Name Description I/O
RTC_CLKOUT RTC_CLKOUT 1 Hz square-wave output O
Pin Diagrams and Pin Assignments
MKW39/38/37 Data Sheet, Rev. 7, 03/2020 87
NXP Semiconductors
7.4.7 Communication Interfaces
This section contains tables for the signal descriptions for the communication modules.
Table 62. SPI0 Module Signal Descriptions
SoC Signal Name Module Signal Name Description I/O
SPI0_PCS0 PCS0/SS Chip Select/Slave Select I/O
SPI0_PCS[2:1] PCS[2:1] Chip Select O
SPI0_SCK SCK Serial Clock I/O
SPI0_SIN SIN Data In I
SPI0_SOUT SOUT Data Out O
Table 63. SPI1 Module Signal Descriptions
SoC Signal Name Module Signal Name Description I/O
SPI1_PCS0 SPI1_PCS0 Chip Select/Slave Select I/O
SPI1_SCK SCK Serial Clock I/O
SPI1_SIN SIN Data In I
SPI1_SOUT SOUT Data Out O
Table 64. I2C0 Module Signal Descriptions
SoC Signal Name Module Signal Name Description I/O
I2C0_SCL SCL I2C serial clock line I/O
I2C0_SDA SDA I2C serial data line I/O
Table 65. I2C1 Module Signal Descriptions
SoC Signal Name Module Signal Name Description I/O
I2C1_SCL SCL I2C serial clock line I/O
I2C1_SDA SDA I2C serial data line I/O
Table 66. CAN0 Signal Descriptions (KW38 only)
SoC Signal Name Module Signal Name Description I/O
CAN0_RX CAN RX CAN Receive Pin I
CAN0_TX CAN TX CAN Transmit Pin O
Pin Diagrams and Pin Assignments
88 MKW39/38/37 Data Sheet, Rev. 7, 03/2020
NXP Semiconductors
Table 67. LPUART0 Module Signal Descriptions
SoC Signal Name Module Signal Name Description I/O
LPUART0_CTS_b LPUART CTS Clear To Send I
LPUART0_RTS_b LPUART RTS Request To Send O
LPUART0_RX LPUART RxD Receive Data I
LPUART0_TX LPUART TxD Transmit Data1I/O
1. This pin is normally an output, but is an input (tristated) in single wire mode whenever the transmitter is disabled or
transmit direction is configured for receive data
Table 68. LPUART1 Module Signal Descriptions (KW38 only)
SoC Signal Name Module Signal Name Description I/O
LPUART1_CTS_b LPUART CTS Clear To Send I
LPUART1_RTS_b LPUART RTS Request To Send O
LPUART1_RX LPUART RxD Receive Data I
LPUART1_TX LPUART TxD Transmit Data1I/O
1. This pin is normally an output, but is an input (tristated) in single wire mode whenever the transmitter is disabled or
transmit direction is configured for receive data
7.4.8 Human-Machine Interfaces(HMI)
This section contains tables describing the HMI signals.
Table 69. GPIO Module Signal Descriptions
SoC Signal Name Module Signal Name Description I/O
PTA[19:16][2:0] PORTA19-16, 2-0 General Purpose Input/
Output
I/O
PTB[18:16][3:0] PORTB18-16, 3-0 General Purpose Input/
Output
I/O
PTC[19:16][7:1] PORTC19-16, 7-1 General Purpose Input/
Output
I/O
8 Package Information
Package Information
MKW39/38/37 Data Sheet, Rev. 7, 03/2020 89
NXP Semiconductors
8.1 Obtaining package dimensions
Package dimensions are available in package drawings.
To find a package drawing, go to nxp.com and perform a keyword search for the
document number of the drawing:
Table 70. Packaging Dimensions
If you want the drawing for this package Then use this document number
48-pin "Wettable" HVQFN (7x7) 98ASA01307D
9 Part identification
9.1 Description
Part numbers for the chip have fields that identify the specific part. You can use the
values of these fields to determine the specific part you have received.
9.2 Format
Part numbers for this device have the following format:
Q KW## A FFF R T PP CC N
9.3 Fields
This table lists the possible values for each field in the part number (not all
combinations are valid):
Table 71. Part number fields descriptions
Field Description Values
Q Qualification status M = Fully qualified, general market flow
P = Prequalification
KW## Kinetis Wireless family KW39
KW38
KW37
Table continues on the next page...
Part identification
90 MKW39/38/37 Data Sheet, Rev. 7, 03/2020
NXP Semiconductors
Table 71. Part number fields descriptions (continued)
Field Description Values
A Key attribute A = Automotive Qualification
Z = Industrial Qualification
FFF Program flash memory size 512 = 512 KB
T Temperature range (°C) V = –40 to 105
C = –40 to 85
PP Package identifier FT = 48 "Wettable" HVQFN (7 mm x 7 mm)
CC Maximum CPU frequency (MHz) 4 = 48 MHz
N Packaging type (Blank) = Tray
R = Tape and reel
9.4 Example
This is an example part number:
MKW38A512VFT4
10 Revision HistoryTable 72. Revision History
Rev. No. Date Substantial Changes
Rev 7 03/2020 Replaced VDD_XTAL with VDD_RF3.
Preceded Tx output power value, 5 dBM, with a plus "+" sign.
Added "256 KB P-Flash" to the fifth column name in the KW39/38/37 Part Numbers table.
Corrected Figure 3 to show Prg Acc RAM 8 KB in place of FlexRAM 8 KB. Also added
"Prg Acc RAM" entry in Table 1.
Corrected accuracy percentage of on-chip 4 MHz oscillator to 11% in System Clocks.
Updated minimum and typical values in Table 4 - Top-Level Receiver Specifications.
Updated maximum and typical values in Table 6 - Top-Level Transmitter Specifications.
Also updated footnote 3 as follows: "Measured at KW39/38/37 RF pins, with Vdd_RFx
over 1.44 V and assuming an average Tx duty cycle <=24%. For Tx output over +3.5 dBm,
powered Vdd_RFx has to be higher than 1.44 V.".
Added VDD_1P5 specification in Voltage and current operating requirements.
Added VPOR_VDD_1P5 specification in LVD and POR operating requirements.
Updated maximum value of Frequency deviation of internal reference clock to ± 11 in
MCG specifications.
In Power consumption operating behaviors :
Removed the following note: "The maximum values specified in the following tables
represent characterized results equivalent to the mean plus three times the standard
deviation (mean + 3 sigma)."
Updated maximum values of Power consumption operating behaviors - Bypass and
Buck Modes in Table 14 and Table 15.
Table continues on the next page...
Revision History
MKW39/38/37 Data Sheet, Rev. 7, 03/2020 91
NXP Semiconductors
Table 72. Revision History (continued)
Rev. No. Date Substantial Changes
Added VDD_1P5 symbol to "Bypass Mode Supply Voltage (RF and Analog)" in DC-
DC Converter operating conditions.
Updated minimum value to 1.5 V and removed typical value in "1.5 V Voltage
Output" in Table 43. Also updated the corresponding footnote with the correct value
of 1.5 V.
Rev 6 01/2020 Updated Low-power Mode (VLLS0) current value to 266.6 nA in front page features under
"Low-power Consumption" section.
Updated through out typical value of Bluetooth LE Receiver Sensitivity (2 Mbit/s and 1
Mbit/s) to -95.5 dBm and -98 dBm respectively.
Updated typical values of Top-level receiver specifications in Table 4.
Updated typical and maximum values in Table 14 and Table 15.
Updated typical values of Tx (at 5 dBm) radio state at STOP and RUN MCU states in SoC
Power Consumption.
Updated VCDM ratings in ESD handling ratings. Also updated the JEDEC standard to
JS001 and JS002.
Rev 5 12/2019 Editorial fixes.
Specified typical value of Rx current as 6.3 mA in front page features of the Data sheet
(under Low-power Consumption section). Also added 256 KB FlexNVM column in
KW39/38/37 Part Numbers table.
Added Table 1.
Corrected accuracy percentage of RC oscillator and on-chip 4 MHz oscillator to 3% and
6% respectively in System Clocks.
Updated receiver sensitivity value to -101 dBm in Key Specifications.
In section 4.2 - Receiver Feature Summary:
Specified typical values of IRxon with respect to DC-DC converter buck and bypass
modes in Table 4.
Updated receiver specifications with generic FSK modulations in Table 5.
Updated VOH - Normal drive pad in Voltage and current operating behaviors to include
output high voltage at -1 mA.
Added the following paragraph to Power consumption operating behaviors : "The
maximum values specified in the following tables represent characterized results
equivalent to the mean plus three times the standard deviation (mean + 3 sigma)." Also
updated units of IDD_VLLS1 typical values in Table 15.
Updated maximum values in Table 14 and Table 15. Also updated mode# 20 and 21,
IDD_VLLS2 and IDD_VLLS2_16KB_16KB, to IDD_VLLS2_16KB and IDD_VLLS2_32KB.
Updated Run mode supply current/VLPR mode current vs. core frequency images in
Diagram: Typical IDD_RUN operating behavior.
Updated Table 26 to include operating temperature (TA), load capacitance (CL), and ESR
specifications.
Updated value of VDCDC_IN to 2.1 V for IDD_1P8_buck3 in 1.8V Output Current row in
Table 43.
Rev 4 08/2019 Updated value of Typical Receiver Sensitivity to -101 dBm.
Corrected radio block in KW39 Detailed Block Diagram. Also M1 port (connected from
AXBS to Data Stream) corrected to M3.
Added new item ("Each individual MB is formed by 16, 24, .....") to the list of features in
FlexCAN section in Peripheral features.
Updated typical values in Receiver Feature Summary.
In Transmit and PLL Feature Summary :
Specified typical value of "Bluetooth LE 2 Mbit/s Adjacent Channel Transmit Power
at 4 MHz and >=6 MHz offset".
Updated Figure 4. TX Pout (dBm) as function TX-PA Power Code at RF pins.
Table continues on the next page...
Revision History
92 MKW39/38/37 Data Sheet, Rev. 7, 03/2020
NXP Semiconductors
Table 72. Revision History (continued)
Rev. No. Date Substantial Changes
Updated numbers of "Transmit Output Power as a function of PA_POWER[5:0]" in
Table 7 and Table 8.
Added Figure 5. TX Pout (dBm) as function TX-PA Power Code at RF pins (LDO-HF
bumped).
Updated numbers in Table 16.
Replaced "EMC design" with "KW38, HW guideline, RF system evaluation" in Designing
with radiated emissions in mind.
Updated maximum value of Δfintf_ft to ±6 in MCG specifications.
Updated Table 43 with the following:
Added conditions, VDCDC_IN above 2.7 V and below 2.7 V, in the first row, "DC-DC
Converter Output Power".
Updated conditions in the "1.8 V Output Current" row. Also added IDD_1P8_buck3
condition to the row and updated maximum values.
Updated "1.5 V Output Current" maximum value to 45 mA.
Updated footnote 5 as follows: "The output current specification in buck mode
represents..... Note that the maximum output power of the DC-DC converter is 140
mW when VDCDC_IN is below 2.7 V and 195 mW when VDCDC_IN is above 2.7 V......".
Rev 3 06/2019 Removed "Input Voltage High/Low" rows from Radio operating conditions.
Removed the following footnote from Table 14 - "Supported through the connectivity
software in its pre-defined Deep Sleep Modes". Also updated Typical values in Table 14
and Table 15.
Removed "Flash timing specifications – program and erase" and "Flash high voltage
current behaviors" tables.
Updated 48-pin "Wettable" HVQFN pinout diagram - added ground pin 49 to the diagram.
Rev 2 04/2019 Updated typical value of Bluetooth LE Receiver sensitivity at 2 Mbit/s from -94 to -95 dBm.
Updated pin package drawing.
Updated Low-power Mode (VLLS0) Current value to 252 nA and typical value of Tx
current to 5.7 mA.
Added "512 KB P-Flash" column to this table. Also modified column name to "8 KB
FlexRAM EEPROM" from 8 KB EEPROM.
Replaced "Prg Acc RAM 8 KB" with "FlexRAM 8 KB" in KW37 Detailed Block Diagram.
Removed "Galois counter mode (AES-GCM)" and "DES modes" features of LTC from
Security Features.
Updated typical values in Receiver Feature Summary. Also updated measurement
resolution to 2 MHz from 1 MHz in "Bluetooth LE uncoded 2 Mbit/s (High Speed)" section.
Updated typical values in Table 5.
Updated typical values of ITX0dBm, ITX0dBmb, ITX3.5dBm, ITX3.5dBmb, ITX5dBm, and ITX5dBmb.
Also updated minimum value of TXBWBLE2M to 2.2 MHz in Table 6.
Removed 48-pin LQFN package from Thermal attributes and specified values for
HVQFN48. Also replaced JESD51-2 standard with JESD51-2A in footnotes.
In Table 14 and Table 15 :
Added "Mode#" column.
Added the following measurements—IDD_RUN_CM, IDD_VLPR_CM,
IDD_VLLS2_16KB_16KB, IDD_VLLS2_16KB_RF_Tx_RAM,
IDD_VLLS2_16KB_RF_Rx_RAM.
Updated typical values.
Added "Adder#" column to Table 16.
Updated minimum and maximum values of "1.5 V Output Voltage" in Table 43. Also
specified the condition as "Consumed by Radio.".
Removed support of DIAG1-3 signals and updated "DEFAULT" column to correct
"DISABLED" status of PTA19, PTB1/2/3 pin names in Signal Multiplexing and Pin
Assignments tables.
Table continues on the next page...
Revision History
MKW39/38/37 Data Sheet, Rev. 7, 03/2020 93
NXP Semiconductors
Table 72. Revision History (continued)
Rev. No. Date Substantial Changes
Rev 1 12/2018 Updated Features list on the front page:
Updated Typical Receiver Sensitivity value of BLE LR 500 kbit/s from -99 to -101
dBm.
Added 0.7 in the Generic FSK modulation index.
Updated topic Radio features.
Restructured section 3 Transceiver Description.
Updated Full Bluetooth Low Energy version 5.0 modulation and Generic FSK modulation
values in Key Specifications.
Updated Table 4, Table 5, and Table 6. Added Table 8.
Added the following footnote in : "Tx continuous wave power output at the RF pins with the
recommended matching components mounted on PCB.".
Rev 1
Draft
11/2018 Removed the following part numbers: MKW38A512VHT4, MKW38Z512VHT4, and
MKW37Z512VHT4.
Added the following part numbers: MKW38Z512VFT4 and MKW37Z512VFT4.
Removed 48-pin LQFN package.
Changed 48 "Wettable" QFN to 48 "Wettable" HVQFN throughout.
Applied new NXP Brand Guidelines for Bluetooth Low Energy. Removed references of
BLE and replaced with Bluetooth LE.
Updated Features list on the front page:
Corrected Typical Receiver Sensitivity value of BLE LR 500 kbit/s from -100.5 to -99
dBm.
Corrected Typical Receiver Sensitivity (250 kbit/s GFSK-BT=0.5, h=0.5) from -100
to -103 dBm.
Added 8 KB program acceleration RAM on KW37 to MCU and Memories section.
Updated topic 2.2 Radio Features.
Updated topic 2.3 Microcontroller features in the "On-Chip Memory" section to include
support of EEPROM emulation.
Updated values of VDD_1P8OUT=1.8 V and VDD_1P8OUT=3.0 V to 45 mA and 27 mA.
Updated maximum value of Programmable transmitter output power to 5 dBm.
Updated typical value of RF Output power control range to 35 dB in Table 5. Top level
Transmitter Specifications.
Removed silicon revision (R) field from Table 71. Part number fields descriptions.
Rev 0 09/2018 Initial Internal Release
Revision History
94 MKW39/38/37 Data Sheet, Rev. 7, 03/2020
NXP Semiconductors
How to Reach Us:
Home Page:
nxp.com
Web Support:
nxp.com/support
Information in this document is provided solely to enable system and software implementers to use
NXP products. There are no express or implied copyright licenses granted hereunder to design or
fabricate any integrated circuits based on the information in this document. NXP reserves the right to
make changes without further notice to any products herein.
NXP makes no warranty, representation, or guarantee regarding the suitability of its products for any
particular purpose, nor does NXP assume any liability arising out of the application or use of any
product or circuit, and specifically disclaims any and all liability, including without limitation
consequential or incidental damages. "Typical" parameters that may be provided in NXP data sheets
and/or specifications can and do vary in different applications, and actual performance may vary over
time. All operating parameters, including "typicals," must be validated for each customer application
by customer's technical experts. NXP does not convey any license under its patent rights nor the
rights of others. NXP sells products pursuant to standard terms and conditions of sale, which can be
found at the following address: nxp.com/SalesTermsandConditions.
While NXP has implemented advanced security features, all products may be subject to unidentified
vulnerabilities. Customers are responsible for the design and operation of their applications and
products to reduce the effect of these vulnerabilities on customer's applications and products, and
NXP accepts no liability for any vulnerability that is discovered. Customers should implement
appropriate design and operating safeguards to minimize the risks associated with their applications
and products.
NXP, the NXP logo, NXP SECURE CONNECTIONS FOR A SMARTER WORLD, COOLFLUX,
EMBRACE, GREENCHIP, HITAG, ICODE, JCOP, LIFE VIBES, MIFARE, MIFARE CLASSIC,
MIFARE DESFire, MIFARE PLUS, MIFARE FLEX, MANTIS, MIFARE ULTRALIGHT,
MIFARE4MOBILE, MIGLO, NTAG, ROADLINK, SMARTLX, SMARTMX, STARPLUG, TOPFET,
TRENCHMOS, UCODE, Freescale, the Freescale logo, AltiVec, CodeWarrior, ColdFire, ColdFire+,
the Energy Efficient Solutions logo, Kinetis, Layerscape, MagniV, mobileGT, PEG, PowerQUICC,
Processor Expert, QorIQ, QorIQ Qonverge, SafeAssure, the SafeAssure logo, StarCore, Symphony,
VortiQa, Vybrid, Airfast, BeeKit, BeeStack, CoreNet, Flexis, MXC, Platform in a Package, QUICC
Engine, Tower, TurboLink, EdgeScale, EdgeLock, eIQ, and Immersive3D are trademarks of NXP
B.V. All other product or service names are the property of their respective owners. AMBA, Arm,
Arm7, Arm7TDMI, Arm9, Arm11, Artisan, big.LITTLE, Cordio, CoreLink, CoreSight, Cortex,
DesignStart, DynamIQ, Jazelle, Keil, Mali, Mbed, Mbed Enabled, NEON, POP, RealView, SecurCore,
Socrates, Thumb, TrustZone, ULINK, ULINK2, ULINK-ME, ULINK-PLUS, ULINKpro, µVision,
Versatile are trademarks or registered trademarks of Arm Limited (or its subsidiaries) in the US and/or
elsewhere. The related technology may be protected by any or all of patents, copyrights, designs and
trade secrets. All rights reserved. Oracle and Java are registered trademarks of Oracle and/or its
affiliates. The Power Architecture and Power.org word marks and the Power and Power.org logos
and related marks are trademarks and service marks licensed by Power.org.
© 2018-2020 NXP B.V.
Document Number MKW39A512
Revision 7, 03/2020