2N2322 thru 2N2326 SILICON THYRISTORS All-diffused PNPN thyristors designed for grating operation in mA/A signal or detection circuits MAXIMUM RATINGS (*) TJ=125C unless otherwise noted, RGK=1000 Symbol VRSM(REP) VRSM(NON-REP) IT(RMS) ITSM Ratings Peak reverse blocking voltage (1) Non-repetitive peak blocking reverse voltage (t<5.0 ms) Forward Current RMS (all conduction angles) Peak Surge Current (One-Half Cycle, 60Hz) No Repetition Until Thermal Equilibrium is Restored. 2N2322 2N2323 2N2324 2N2325 2N2326 25 50 100 150 200 V 40 75 150 225 300 V 1.6 Amp 15 Amp PGM Peak Gate Power - Forward 0.1 W PG(AV) Average Gate Power - Forward 0.01 W IGM Peak Gate Current - Forward 0.1 Amp VGFM Peak Gate Voltage - Forward 6.0 V VGRM Peak Gate Voltage - Reverse 6.0 V TJ Operating Range TSTG Storage Temperature Range Junction Temperature -65 to +125 C -65 to +150 ELECTRICAL CHARACTERISTICS TJ=25C unless otherwise noted, RGK=1000 COMSET SEMICONDUCTORS 1/2 2N2322 thru 2N2326 Symbol VDRM IRRM IDRM VT IGT VGT IH Ratings Peak Forward Blocking Min : Voltage (1) Peak Reverse Blocking Current (Rated VDRM, TJ =125C) Peak Forward Blocking Current (Rated VDRM, TJ =125C) Forward on Voltage IT =1.0 A Peak IT =1.0 A Peak, TC =85C Gate Trigger Current (2) Anode Voltage=6.0 Vdc, RL=100 Anode Voltage=6.0 Vdc, RL=100, TC=-65C Gate Trigger Voltage Anode Voltage=6.0 V, RL=100 Anode Voltage=6.0 V, RL=100, TC=-65C VDRM = Rated, RL=100, TJ=125C Holding Current Anode Voltage=6.0 V Anode Voltage=6.0 V, TC=-65C Anode Voltage=6.0 V, TC=125C 2N2322 25 * 2N2323 2N2324 2N2325 50 * 100 * 150 * 2N2326 200 * Max : 100 * A Max :100 * A Max :1.5 Max : 2.0* A Max : 200 A Max : 350 * Max : 0.8 V Max : 1.0 * Min : 0.1 * Max : 2.0 Max : 3.0 * Min : 0.15 * mA * JEDEC Registered Values 1) VRSM and VDRM can be applied for all types on a continuous dc basis without incurring damage. 2) RGK current is not included in measurement. MECHANICAL DATA CASE TO-39 DIMENSIONS A B C D E F G H L Pin 1 : Pin 2 : Pin 3 : mm inches 6,25 0,24 13,59 0,53 9,24 0,36 8,24 0,32 0,78 0,03 1,05 0,041 0,42 0,165 45 5,1 0,2 Cathode Gate Anode Information furnished is believed to be accurate and reliable. However, CS assumes no responsability for the consequences of use of such information nor for errors that could appear. Data are subject to change without notice. COMSET SEMICONDUCTORS V 2/2