DATA SH EET
Product specification
Supersedes data of 1999 Aug 10 2002 Sep 27
INTEGRATED CIRCUITS
UBA2030T
Full bridge driver IC
2002 Sep 27 2
Philips Semiconductors Product specification
Full bridge driver IC UBA2030T
FEATURES
•Full bridge driver
•Integrated bootstrap diodes
•Integrated high voltage level shift function
•High voltage input (570 V maximum) for the internal
supply
•Adjustable ‘dead time’
•Adjustable oscillator frequency
•High voltage level shifter for the bridge enable function
•Shut-down function.
APPLICATIONS
•The UBA2030T can drive the MOSFETs in any type of
load configured as a full bridge
•The circuit is intended as a commutator for High
Intensity Discharge (HID) lamps.
GENERAL DESCRIPTION
The UBA2030T is a high voltage integrated circuit
fabricated using the BCD750 power logic process. The
circuit is designed for driving the MOSFETs in a full bridge
configuration. In addition, it features a shut-down function,
an adjustable oscillator and a PMOS high voltage level
shifter to control the bridge enable function. To guarantee
an accurate 50% duty factor, the oscillator signal passes
through a divider before being fed to the output drivers.
ORDERING INFORMATION
TYPE NUMBER PACKAGE
NAME DESCRIPTION VERSION
UBA2030T SO24 plastic small outline package; 24 leads; body width 7.5 mm SOT137-1
2002 Sep 27 3
Philips Semiconductors Product specification
Full bridge driver IC UBA2030T
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
High voltage
VHV high voltage supply 0 −570 V
Start-up; powered via pin HV
Istrtu start-up current −0.7 1.0 mA
Vth(oscstrt) start oscillating threshold
voltage at fbridge = 500 Hz; no load 14.0 15.5 17.0 V
Vth(oscstp) stop oscillating threshold
voltage 11.5 13.0 14.5 V
Output drivers
Io(source) output source current VDD =V
FSL =V
FSR =15V;
V
GHR =V
GHL =V
GLR =V
GLL =0V 140 190 240 mA
Io(sink) output sink current VDD =V
FSL =V
FSR =15V;
V
GHR =V
GHL =V
GLR =V
GLL =15V 200 260 320 mA
Internal oscillator
fbridge bridge oscillating frequency EXO pin connected to SGND 50 −50000 Hz
External oscillator
fosc(ext) external oscillator frequency RC pin connected to SGND; 100 −100000 Hz
Dead time control
tdead dead time control range adjusted externally 0.4 −4µs
Bridge enable
IIH HIGH-level input current bridge enable active 100 −700 µA
IIL LOW-level input current bridge enable not active 0 −20 µA
Shut-down
VIH HIGH-level input voltage shut-down active; 4.5 −VDD V
VIL LOW-level input voltage shut-down not active; 0 −0.5 V
fbridge fosc(ext)
2
-----------------
=
∆VSD
∆t
-------------- 5 V/ms>
∆VSD
∆t
-------------- 5 V/ms>
2002 Sep 27 4
Philips Semiconductors Product specification
Full bridge driver IC UBA2030T
BLOCK DIAGRAM
Fig.1 Block diagram.
handbook, full pagewidth
MGK590
LOW VOLTAGE
LEVEL SHIFTER
LOW VOLTAGE
SUPPLY
HIGH VOLTAGE
LEVEL SHIFTER
HIGHER LEFT
DRIVER
LOWER LEFT
DRIVER
LOWER RIGHT
DRIVER
HIGHER RIGHT
DRIVER
BRIDGE ENABLE
OSCILLATOR
LOGIC
÷
2
18
24 23 5 20 22
87
HV BER BE
SGND VDD RC EXO DTC
21
SD
4, 6, 9, 16, 17, 19
n.c.
1GLR
2PGND
3GLL
13 SHR
14 GHR
11 GHL
15 FSR
12 SHL
10 FSL
UBA2030T
2002 Sep 27 5
Philips Semiconductors Product specification
Full bridge driver IC UBA2030T
PINNING
SYMBOL PIN DESCRIPTION
GLR 1 gate of lower right MOSFET
PGND 2 power ground for sources of lower
left and right MOSFETs
GLL 3 gate of lower left MOSFET
n.c. 4 not connected
RC 5 RC input for internal oscillator
n.c. 6 not connected
BE 7 bridge enable control input
BER 8 bridge enable reference input
n.c. 9 not connected
FSL 10 floating supply voltage left side
GHL 11 gate of higher left MOSFET
SHL 12 source of higher left MOSFET
SHR 13 source of higher right MOSFET
GHR 14 gate of higher right MOSFET
FSR 15 floating supply voltage right side
n.c. 16 not connected
n.c. 17 not connected
HV 18 high voltage supply
n.c. 19 not connected
EXO 20 external oscillator input
SD 21 shut-down input
DTC 22 ‘dead time’ control input
VDD 23 internal (low voltage) supply
SGND 24 signal ground Fig.2 Pin configuration.
handbook, halfpage
UBA2030T
GLR
PGND
GLL
n.c.
RC
n.c.
BE
BER
n.c.
FSL
GHL
SHL
SGND
VDD
DTC
SD
n.c.
HV
EXO
n.c.
n.c.
FSR
GHR
SHR
MGK589
1
2
3
4
5
6
7
8
9
10
11
12
24
23
22
21
20
19
18
17
16
15
14
13
2002 Sep 27 6
Philips Semiconductors Product specification
Full bridge driver IC UBA2030T
FUNCTIONAL DESCRIPTION
Supply voltage
The UBA2030T is powered by a single supply voltage
connected to the HV pin (the full bridge supply could be
used, for example). The IC generates its own low voltage
supply for driving the internal circuitry and the MOSFETs
in the full bridge, removing the need for an additional low
voltage supply. A capacitor must be connected between
the VDD pin and SGND to obtain a ripple-free internal
supply voltage.
Start-up
When the power is turned on, the UBA2030T enters a
start-up phase; the high side MOSFETs are switched off
and the low side MOSFETs switched on. During start-up,
thebootstrapcapacitorsarechargedandthebridgeoutput
current is zero.
Oscillation
AtthepointwherethesupplyvoltageattheHV pincrosses
the ‘start oscillating threshold’, the bridge begins
commutating between the following two defined states:
•Higherleft andlower rightMOSFETs onand higherright
and lower left MOSFETs off
•Higherleft andlower rightMOSFETs offand higherright
and lower left MOSFETs on.
When the internal oscillator is used, the bridge
commutating frequency is determined by the values of an
external resistor and capacitor. In this mode, the EXO pin
must be connected to SGND.
When an external oscillator is used, its output must be
connected to the EXO pin; the internal oscillator must be
disabled by connecting the RC pin to SGND. The bridge
commutatingfrequency is half the oscillator frequency due
to a ÷2 circuit which guarantees an accurate 50% duty
factor.
The time between turning off the conducting pair of
MOSFETs and turning on the other pair, the ‘dead time’,
can be adjusted using an external resistor. If the supply
voltage at the HV pin falls below the ‘stop oscillating
threshold’, the UBA2030T re-enters the start-up phase.
Bridge enable
The bridge enable function allows the bridge to be held in
its current state. When active, it connects the RC pin to
SGND,disablingtheinternal oscillator.Ifthebridge enable
function is activated during ‘dead time’, the bridge is
allowed to enter the next conducting state before being
held. Oscillations resume the instant the bridge enable
function is turned off. A timing diagram is shown in Fig.3.
To hold the bridge, an external control circuit is required to
provide a source current to the bridge enable control input
(pin BE), and to supply a reference voltage to pin BER
(see Fig.6).
Shut-down
The active HIGH shut-down input (pin SD) can be used at
any time to turn off all four MOSFETs. However, if the
supply voltage drops below the ‘stop oscillating threshold’,
the bridge re-enters the start-up phase even if the
shut-down function is active.
2002 Sep 27 7
Philips Semiconductors Product specification
Full bridge driver IC UBA2030T
Fig.3 Timing diagram.
handbook, full pagewidth
MGK594
dead time
VRC
VBE
VGHL
VGLR
VGHR
VGLL
on
off
time
2002 Sep 27 8
Philips Semiconductors Product specification
Full bridge driver IC UBA2030T
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Notes
1. This value is guaranteed down to Tj=−25 °C. From Tj=−25 to −40 °C, the voltage on pin HV is limited to 530 V and
the floating supply voltage (VFSL,V
FSR) is limited to a maximum value of 548 V.
2. In accordance with the human body model: equivalent to discharging a 100 pF capacitor through a 1.5 kΩ series
resistor.
THERMAL CHARACTERISTICS
QUALITY SPECIFICATION
In accordance with
“General Quality Specifications for Integrated Circuits SNW-FQ-611D”
.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VDD supply voltage (low voltage) 0 18 V
VHV supply voltage (high voltage) note 1 0 570 V
VFSL, VFSR floating supply voltage VSHL =V
SHR = 570 V, note 1 570 588 V
VSHL =V
SHR = 0 V 0 18 V
VSHL, VSHR source voltage for higher right and left
MOSFETs with reference to PGND and SGND −10 +570 V
VPGND power ground voltage with reference to SGND −7 +10 V
Vi(BER) bridge enable reference input voltage 0 570 V
Vi(BE) bridge enable control input voltage Vi(BER) = 570 V 570 580 V
Vi(BER) =0V 0 10 V
I
i(BE) bridge enable control input current 0 700 µA
Vi(EXO) input voltage from external oscillator
on pin EXO 0V
DD V
Vi(SD) shut-down input voltage on pin SD 0 VDD V
SR slew rate at output pins repetitive −4 +4 V/ns
Tjjunction temperature −40 +150 °C
Tamb ambient temperature −40 +150 °C
Tstg storage temperature −55 +150 °C
Vesd electrostatic discharge voltage note 2
pin HV −1250 +1250 V
pins BE, BER, FSL, GHL, SHL,
SHR, GHR and FSR −1500 +1500 V
SYMBOL PARAMETER VALUE UNIT
Rth(j-a) thermal resistance from junction to ambient 70 K/W
2002 Sep 27 9
Philips Semiconductors Product specification
Full bridge driver IC UBA2030T
CHARACTERISTICS
Tj=25°C; all voltages with respect to PGND; positive currents flow into the IC.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
High voltage
VHV high voltage supply 0 −570 V
ILleakage current with 570 V applied to pins BER,
SHR and SHL −−5µA
V
PGND(float),
VSGND(float)
floating ground voltage 0 −5V
Start-up, powered via the HV pin; note 1
Istrtu start-up current −0.7 1.0 mA
Vstrtu start-up voltage high left and right MOSFETs off; low
left and right MOSFETs on −6−V
Vth(oscstrt) start oscillating threshold
voltage fbridge = 500 Hz; no load 14.0 15.5 17.0 V
Vth(oscstp) stop oscillating threshold
voltage 11.5 13.0 14.5 V
Vhys hysteresis voltage between oscillation start and stop
levels 2.0 2.5 3.0 V
IHV supply current fbridge = 500 Hz; no load; VHV = 50 V 0.3 0.5 0.7 mA
VDD internal supply voltage (low
voltage) fbridge = 500 Hz; no load; VHV = 50 V 14.0 15.3 16.5 V
fbridge = 500 Hz; no load; at start
oscillating threshold 10.5 11 11.5 V
fbridge = 500 Hz; no load; at stop
oscillating threshold 8.0 8.5 9.0 V
Output drivers
Vo(GHL),
Vo(GHR)
output voltage on pins GHL
and GHR for gates of higher
right and left MOSFETs
at power-up; no load; VHV =50V;
f
bridge = 500 Hz 13.2 14.5 16.5 V
Vo(GLL),
Vo(GLR)
output voltage on pins GLL
and GLR for gates of lower
right and left MOSFETs
14.0 15.3 16.5 V
∆t time difference between
diagonally placed output
drivers
0−100 ns
Ron(HL),
Ron(HR)
higher MOSFETs on
resistance VFSR =V
FSL = 15 V; Isource =50mA 33 39 46 Ω
R
off(HL),
Roff(HR)
higher MOSFETs off
resistance VFSR =V
FSL = 15 V; Isink =50mA 11 14 17 Ω
R
on(LL),
Ron(LR)
lower MOSFETs on
resistance VDD =15V; I
source =50mA 333946Ω
R
off(LL),
Roff(LR)
lower MOSFETs off
resistance VDD =15V; I
sink =50mA 111417Ω
V
diode bootstrap diode voltage
drop Idiode = 1 mA 0.8 1.0 1.2 V
2002 Sep 27 10
Philips Semiconductors Product specification
Full bridge driver IC UBA2030T
Io(source) output source current VDD =V
FSL =V
FSR =15V;
V
GHR =V
GHL =V
GLR =V
GLL =0V 140 190 240 mA
Io(sink) output sink current VDD =V
FSL =V
FSR =15V;
V
GHR =V
GHL =V
GLR =V
GLL =15V 200 260 320 mA
IFSL(float),
IFSR(float)
floating supply current VFSL =V
FSR =15V −15 −µA
Internal oscillator; notes 2 and 3
fbridge bridge oscillating frequency EXO pin connected to SGND 50 −50000 Hz
∆fosc/∆T oscillator frequency
dependency with respect to
temperature
fixed RC; ∆T=−40 °C to +150 °C0 −10 %
∆fosc/∆VDD oscillator frequency
dependency with respect to
VDD
fixed RC; ∆VDD =12to16V 0 −10 %
kHHIGH-level trip point VRCH =k
H×V
DD 0.67 0.71 0.75
kLLOW-level trip point VRCL =k
L×V
DD −0.01 −
kosc oscillator constant 2.34 2.49 2.64
External oscillator; note 2
fosc(ext) external oscillator frequency RC pin connected to SGND; 100 −100000 Hz
VIH HIGH-level input voltage 4.5 −VDD V
VIL LOW-level input voltage 0 −0.5 V
Ii(EXO) input current 0 −50 µA
Dead time control; notes 2 and 4
tdead dead time control range adjusted externally 0.4 −4µs
kDT dead time variable 180 270 380 kΩ/µs
Bridge enable; notes 2 and 5
IIH HIGH-level input current bridge enable active 100 −700 µA
note 6 −1.1 −mA
IIL LOW-level input current bridge enable not active 0 −20 µA
VBE −VBER threshold voltage: IIH = 100 µA
with reference to HV 2.1 2.6 3.0 V
with reference to PGND 3.5 5.5 7.5 V
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
fbridge 1
kosc Rosc
×Cosc
×
---------------------------------------------
=
fbridge fosc(ext)
2
-----------------
=
∆VEXO
∆t
----------------- 5 V/ms>
∆VEXO
∆t
----------------- 5 V/ms>
2002 Sep 27 11
Philips Semiconductors Product specification
Full bridge driver IC UBA2030T
Notes
1. The current into pin HV is internally limited to 15 mA at Tj=25°C and to 10 mA at Tj= 150 °C.
2. VDD =15V.
3. The internal ÷2 circuit requires the frequency of the internal or external oscillator to be twice the bridge frequency.
When the internal oscillator is used, the bridge frequency can be adjusted using an external resistor and capacitor:
where Rosc(min) = 200 kΩand Rosc(max) =2MΩwith low leakage current.
4. The ‘dead time’ is adjusted using an external resistor (RDT) connected between pins DTC and SGND. The value is
calculated as: RDT =270xt
dead −70, where the units are kΩ for RDT and µs for tdead. The minimum value
RDT(min) =50kΩ and the maximum value RDT(max) =1MΩ.
5. This function is disabled when using an external oscillator.
6. IIH < 2.1 mA when the condition is VBE −VBER = 5 V at Tj= 150 °C.
Shut-down; note 2
VIH HIGH-level input voltage shut-down active; 4.5 −VDD V
VIL LOW-level input voltage shut-down not active; 0 −0.5 V
Ii(SD) input current 0 −50 µA
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
∆VSD
∆t
-------------- 5 V/ms>
∆VSD
∆t
-------------- 5 V/ms>
fbridge 1
2.8 Rosc
×Cosc
×
--------------------------------------------
=
2002 Sep 27 12
Philips Semiconductors Product specification
Full bridge driver IC UBA2030T
APPLICATION INFORMATION
Basic application
Abasic fullbridge configurationwith anHID lamp isshown
in Fig.4. The bridge enable and shut-down functions are
not used in this application. The EXO, BE, BER and
SD pins are connected to system ground. The IC is
powered by the high voltage supply.
When the internal oscillator is used, the bridge
commutating frequency is determined by the values of
Rosc and Cosc. The bridge starts oscillating when the HV
supply voltage exceeds the ‘start oscillating threshold’
(typically 15.5 V). If the supply voltage at the HV pin falls
below the ‘stop oscillating threshold’ (typically 13 V), the
UBA2030T enters the start-up state.
Fig.4 Basic configuration.
handbook, full pagewidth
UBA2030T
SHR
GHR
FSR
VDD
SGND
HV
EXO
SD
DTC
SHL
GHL
FSL
PGND
GLR
BER
BE
RC
GLL
13
14
15
18
20
21
22
23
24
12
11
10
8
7
5
3
2
1
IGNITOR LAMP
Ci
C3 RDT
C2
C4
C1
LL
HL
C5
LR
HR
high voltage
570 V (max)
system
ground
Cosc Rosc
MGK592
2002 Sep 27 13
Philips Semiconductors Product specification
Full bridge driver IC UBA2030T
Application with external control
Figure 5 shows an application containing an external
oscillator control circuit referenced to system ground.
The RC, BER and BE pins are connected to system
ground.
The bridge commutation frequency is determined by the
external oscillator. The shut-down input (pin SD) can be
used to quickly turn off all four MOSFETs in the full bridg
Fig.5 External control configuration.
handbook, full pagewidth
UBA2030T
SHR
GHR
FSR
VDD
SGND
HV
EXO
SD
DTC
SHL
GHL
FSL
PGND
GLR
BER
BE
RC
GLL
13
14
15
18
20
21
22
23
24
12
11
10
8
7
5
3
2
1
IGNITOR LAMP
Ci
C3 RDT
C2
C4
C1
LL
HL
C5
LR
HR
system
ground
MGK593
EXTERNAL
OSCILLATOR
CONTROL
CIRCUIT
high voltage
570 V (max)
2002 Sep 27 14
Philips Semiconductors Product specification
Full bridge driver IC UBA2030T
Automotive application
The life of an HID lamp depends on the rate of sodium
migration through its quartz wall. To minimize this, the
lamp must be operated negative with respect to system
ground.
Figure 6 shows a full bridge with an HID lamp in an
automotive environment, and a control circuit referenced
to the high side of the bridge. The BER and HV pins are
connected to system ground. The bridge can be held in its
current state using the BE pin. See the timing diagram in
Fig.3.
Fig.6 Automotive configuration (example 1).
handbook, full pagewidth
UBA2030T
SHR
GHR
FSR
VDD
SGND
HV
EXO
SD
DTC
SHL
GHL
FSL
PGND
GLR
BER
BE
RC
GLL
13
14
15
18
20
21
22
23
24
12
11
10
8
7
5
3
2
1
IGNITOR LAMP
Ci
C3 RDT
C2
C4
C1
LL
HL
C5
LR
HR
high voltage
−570 V (max)
system
ground
CONTROL
UNIT
Cosc Rosc
MGK591
2002 Sep 27 15
Philips Semiconductors Product specification
Full bridge driver IC UBA2030T
Additional application information
The UBA2030T is the commutator part in a complete
system for driving an HID lamp. The life of the HID lamp
can depend on the amount of sodium that migrates
through its quartz wall. To minimize this migration, the
lamp must be operated negative with respect to system
ground.
Figure 7 shows a full bridge with an HID lamp in a typical
automotive configuration using a control unit referenced to
the high side of the bridge. Pin BER is connected to
system ground. The bridge can be held in its current state
by pin BE. The supply current to the internal low voltage
circuit is fed to pin HV which can be connected to either
system ground or to a low voltage DC supply, such as a
battery, as indicated by the dotted lines in Fig.7.
The diode in series with the supply to pin HV prevents Ci
being discharged if the lamp is shorted during the ignition
phase. C6 should be positioned as close as possible to
pin DTC. The control unit drives the MOSFETs relatively
hard which can cause radiation. To prevent switching the
MOSFETs hard, a resistor can be connected in series with
each gate.
In all applications, the voltage on pin HV must not be
allowed to become lower than the voltage at pin VDD
during the start-up phase or during normal operation,
otherwise the full bridge will not operate correctly. During
the start-up phase, pin EXO and pin SD should both be
LOW. The voltage as a function of time at pin EXO and
pin SD should be >5 V/ms.
Fig.7 Automotive configuration (example 2).
handbook, full pagewidth
UBA2030T
SHR
GHR
FSR
VDD
SGND
HV
EXO
SD
DTC
SHL
GHL
FSL
PGND
GLR
BER
BE
RC
GLL
13
14
15
18
20
21
22
23
24
12
11
10
8
7
5
3
2
1
IGNITOR LAMP
Ci
Ci
C3
C6
RDT
C2
C4
C1
LL
HL
C5
LR
HR
high voltage
−570 V (max)
system
ground
CONTROL
UNIT
from
low voltage
DC supply
Cosc Rosc
MGL763
C1 = 150 nF.
C2 = 150 nF.
C3 = 220 nF.
C6 = 100 pF.
Cosc =10nF.
R
osc = 147 kΩ.
RDT =50to1000kΩ(220 kΩresults in a ‘dead time’ of 1 µs).
2002 Sep 27 16
Philips Semiconductors Product specification
Full bridge driver IC UBA2030T
PACKAGE OUTLINE
UNIT A
max. A1A2A3bpcD
(1) E(1) (1)
eH
ELL
pQZ
ywv θ
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC EIAJ
mm
inches
2.65 0.30
0.10 2.45
2.25 0.49
0.36 0.32
0.23 15.6
15.2 7.6
7.4 1.27 10.65
10.00 1.1
1.0 0.9
0.4 8
0
o
o
0.25 0.1
DIMENSIONS (inch dimensions are derived from the original mm dimensions)
Note
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
1.1
0.4
SOT137-1
X
12
24
wM
θ
A
A1
A2
bp
D
HE
Lp
Q
detail X
E
Z
c
L
vMA
13
(A )
3
A
y
0.25
075E05 MS-013
pin 1 index
0.10 0.012
0.004 0.096
0.089 0.019
0.014 0.013
0.009 0.61
0.60 0.30
0.29 0.050
1.4
0.055
0.419
0.394 0.043
0.039 0.035
0.016
0.01
0.25
0.01 0.004
0.043
0.016
0.01
e
1
0 5 10 mm
scale
SO24: plastic small outline package; 24 leads; body width 7.5 mm SOT137-1
97-05-22
99-12-27
2002 Sep 27 17
Philips Semiconductors Product specification
Full bridge driver IC UBA2030T
SOLDERING
Introduction to soldering surface mount packages
Thistextgivesa very briefinsighttoa complex technology.
A more in-depth account of soldering ICs can be found in
our
“Data Handbook IC26; Integrated Circuit Packages”
(document order number 9398 652 90011).
There is no soldering method that is ideal for all surface
mount IC packages. Wave soldering can still be used for
certainsurfacemountICs,butit is not suitableforfinepitch
SMDs. In these situations reflow soldering is
recommended.
Reflow soldering
Reflow soldering requires solder paste (a suspension of
fine solder particles, flux and binding agent) to be applied
tothe printed-circuit boardby screenprinting, stencillingor
pressure-syringe dispensing before package placement.
Several methods exist for reflowing; for example,
convection or convection/infrared heating in a conveyor
type oven. Throughput times (preheating, soldering and
cooling) vary between 100 and 200 seconds depending
on heating method.
Typical reflow peak temperatures range from
215 to 250 °C. The top-surface temperature of the
packages should preferable be kept below 220 °C for
thick/large packages, and below 235 °C for small/thin
packages.
Wave soldering
Conventional single wave soldering is not recommended
forsurfacemountdevices(SMDs)or printed-circuit boards
with a high component density, as solder bridging and
non-wetting can present major problems.
To overcome these problems the double-wave soldering
method was specifically developed.
If wave soldering is used the following conditions must be
observed for optimal results:
•Use a double-wave soldering method comprising a
turbulent wave with high upward pressure followed by a
smooth laminar wave.
•For packages with leads on two sides and a pitch (e):
– larger than or equal to 1.27 mm, the footprint
longitudinal axis is preferred to be parallel to the
transport direction of the printed-circuit board;
– smaller than 1.27 mm, the footprint longitudinal axis
must be parallel to the transport direction of the
printed-circuit board.
The footprint must incorporate solder thieves at the
downstream end.
•Forpackageswithleadsonfour sides, the footprintmust
be placed at a 45°angle to the transport direction of the
printed-circuit board. The footprint must incorporate
solder thieves downstream and at the side corners.
During placement and before soldering, the package must
be fixed with a droplet of adhesive. The adhesive can be
applied by screen printing, pin transfer or syringe
dispensing. The package can be soldered after the
adhesive is cured.
Typical dwell time is 4 seconds at 250 °C.
A mildly-activated flux will eliminate the need for removal
of corrosive residues in most applications.
Manual soldering
Fix the component by first soldering two
diagonally-opposite end leads. Use a low voltage (24 V or
less) soldering iron applied to the flat part of the lead.
Contact time must be limited to 10 seconds at up to
300 °C.
When using a dedicated tool, all other leads can be
soldered in one operation within 2 to 5 seconds between
270 and 320 °C.
2002 Sep 27 18
Philips Semiconductors Product specification
Full bridge driver IC UBA2030T
Suitability of surface mount IC packages for wave and reflow soldering methods
Notes
1. Formore detailed informationon theBGApackages referto the
“(LF)BGAApplication Note
”(AN01026); order acopy
from your Philips Semiconductors sales office.
2. All surface mount (SMD) packages are moisture sensitive. Depending upon the moisture content, the maximum
temperature (with respect to time) and body size of the package, there is a risk that internal or external package
cracks may occur due to vaporization of the moisture in them (the so called popcorn effect). For details, refer to the
Drypack information in the
“Data Handbook IC26; Integrated Circuit Packages; Section: Packing Methods”
.
3. These packages are not suitable for wave soldering. On versions with the heatsink on the bottom side, the solder
cannot penetrate between the printed-circuit board and the heatsink. On versions with the heatsink on the top side,
the solder might be deposited on the heatsink surface.
4. If wave soldering is considered, then the package must be placed at a 45° angle to the solder wave direction.
The package footprint must incorporate solder thieves downstream and at the side corners.
5. Wave soldering is suitable for LQFP, TQFP and QFP packages with a pitch (e) larger than 0.8 mm; it is definitely not
suitable for packages with a pitch (e) equal to or smaller than 0.65 mm.
6. Wave soldering is suitable for SSOP and TSSOP packages with a pitch (e) equal to or larger than 0.65 mm; it is
definitely not suitable for packages with a pitch (e) equal to or smaller than 0.5 mm.
PACKAGE(1) SOLDERING METHOD
WAVE REFLOW(2)
BGA, LBGA, LFBGA, SQFP, TFBGA, VFBGA not suitable suitable
HBCC, HBGA, HLQFP, HSQFP, HSOP, HTQFP, HTSSOP, HVQFN,
HVSON, SMS not suitable(3) suitable
PLCC(4), SO, SOJ suitable suitable
LQFP, QFP, TQFP not recommended(4)(5) suitable
SSOP, TSSOP, VSO not recommended(6) suitable
2002 Sep 27 19
Philips Semiconductors Product specification
Full bridge driver IC UBA2030T
DATA SHEET STATUS
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
DATA SHEET STATUS(1) PRODUCT
STATUS(2) DEFINITIONS
Objective data Development This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
Preliminary data Qualification This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
Product data Production This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Changes will be
communicated according to the Customer Product/Process Change
Notification (CPCN) procedure SNW-SQ-650A.
DEFINITIONS
Short-form specification The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Limiting values definition Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
attheseor at anyotherconditions above thosegiven in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Application information Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
norepresentationorwarrantythatsuchapplicationswillbe
suitable for the specified use without further testing or
modification.
DISCLAIMERS
Life support applications These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductorscustomersusingorsellingtheseproducts
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Right to make changes Philips Semiconductors
reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
theuseofanyofthese products, conveys nolicenceortitle
under any patent, copyright, or mask work right to these
products,andmakes norepresentations or warrantiesthat
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified.
© Koninklijke Philips Electronics N.V. 2002 SCA74
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Philips Semiconductors – a worldwide company
Contact information
For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825
For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
Printed in The Netherlands 613502/03/pp20 Date of release: 2002 Sep 27 Document order number: 9397 750 10256
