BCR08AS-8 - Mitsubishi Electric Semiconductor

Feb.1999

MITSUBISHI SEMICONDUCTOR 〈TRIAC〉

BCR08AS-8

LOW POWER USE

NON-INSULATED TYPE, PLANAR PASSIVATION TYPE

•IT (RMS) .....................................................................0.8A

•V

DRM .......................................................................400V

•I

FGT !, IRGT !, IRGT #.............................................5mA

•I

FGT #.....................................................................10mA

BCR08AS-8

APPLICATION

Hybrid IC, solid state relay,

control of household equipment such as electric fan · washing machine,

other general purpose control applications

Symbol

IT (RMS)

ITSM

I2t

PGM

PG (AV)

VGM

IGM

Tj

Tstg

—

Parameter

RMS on-state current

Surge on-state current

I2t for fusing

Peak gate power dissipation

Average gate power dissipation

Peak gate voltage

Peak gate current

Junction temperature

Storage temperature

Weight

Conditions

Commercial frequency, sine full wave 360° conduction, Ta=40°C ✽4

60Hz sinewave 1 full cycle, peak value, non-repetitive

Value corresponding to 1 cycle of half wave 60Hz, surge on-state

current

Typical value

Unit

A

A2s

W

V

A

°C

mg

Ratings

0.8

8

0.26

1

0.1

6

1

–40 ~ +125

48

Symbol

VDRM

VDSM

Parameter

Repetitive peak off-state voltage ✽1

Non-repetitive peak off-state voltage ✽1

Voltage class

8 (marked “B•”)

400

500

Unit

V

MAXIMUM RATINGS

✽1. Gate open.

2

1

3

1

2

3

T

1

TERMINAL

T

2

TERMINAL

GATE TERMINAL

4.4±0.1 1.5±0.1

1.6±0.2

0.4±0.07

0.8 MIN

2.5±0.1

3.9±0.3

0.4+0.03

–0.05

123

(Back side)

OUTLINE DRAWING

Dimensions

in mm

SOT-89

0.5±0.07

1.5±0.11.5±0.1

Feb.1999

Symbol

IDRM

VTM

VFGT !

VRGT !

VRGT #

VFGT #

IFGT !

IRGT !

IRGT #

IFGT #

VGD

Rth (j-a)

(dv/dt)c

Test conditions

Tj=125°C, VDRM applied

Tc=25°C, ITM=1.2A, Instantaneous measurement

Tj=25°C, VD=6V, RL=6Ω, RG=330Ω

Tj=125°C, VD=1/2VDRM

Junction to case ✽4

Unit

mA

V

mA

V

°C/W

V/µs

Typ.

—

!

@

#

$

!

@

#

$

✽2.Measurement using the gate trigger characteristics measurement circuit.

✽3.The critical-rate of rise of the off-state commutating voltage is shown in the table below.

✽4.Mounted on 25mm × 25mm × t0.7mm ceramic plate with solder.

Test conditions

Voltage

class

8

VDRM

(V)

400

Unit

V/µs

Commutating voltage and current waveforms

(inductive load)

(dv/dt) c

Min.

2

MITSUBISHI SEMICONDUCTOR 〈TRIAC〉

BCR08AS-8

LOW POWER USE

NON-INSULATED TYPE, PLANAR PASSIVATION TYPE

ELECTRICAL CHARACTERISTICS

Parameter

Repetitive peak off-state current

On-state voltage

Gate trigger voltage ✽2

Gate trigger current ✽2

Gate non-trigger voltage

Thermal resistance

Critical-rate of rise of off-state

commutating voltage

1. Junction temperature

Tj=125°C

2. Rate of decay of on-state commutating current

(di/dt)c=–0.4A/ms

3. Peak off-state voltage

VD=400V

Limits

Min.

—

0.1

—

✽3

Max.

1.0

2.0

5

10

—

65

—

10–1

101

7

5

3

2

012

100

7

5

3

2

345

4

T

j

= 125°C

T

j

= 25°C

10023 5710

1

4

2

23 5710

2

44

6

8

10

0

MAXIMUM ON-STATE CHARACTERISTICS

ON-STATE CURRENT (A)

ON-STATE VOLTAGE (V)

RATED SURGE ON-STATE CURRENT

SURGE ON-STATE CURRENT (A)

CONDUCTION TIME

(CYCLES AT 60Hz)

SUPPLY

VOLTAGE TIME

TIME

MAIN CURRENT

MAIN

VOLTAGE

(di/dt)c

V

D

(dv/dt)c

PERFORMANCE CURVES

Feb.1999

10

0

2310

0

5710

1

23 5710

2

23 5710

3

10

2

7

5

3

2

10

1

7

5

3

2

7

5

3

2

10

–1

V

GM

= 10V

V

GT

P

GM

= 1W

P

G(AV)

= 0.1W

I

GM

= 1A

V

GD

= 0.2VI

FGT III

I

FGT I

,

I

RGT I

, I

RGT III

MAXIMUM ON-STATE POWER

DISSIPATION

ON-STATE POWER DISSIPATION (W)

RMS ON-STATE CURRENT (A)

ALLOWABLE CASE TEMPERATURE

VS. RMS ON-STATE CURRENT

CASE TEMPERATURE (°C)

RMS ON-STATE CURRENT (A)

MAXIMUM TRANSIENT THERMAL

IMPEDANCE CHARACTERISTICS

TRANSIENT THERMAL IMPEDANCE (°C/W)

CONDUCTION TIME

(CYCLES AT 60Hz)

GATE CHARACTERISTICS

GATE VOLTAGE (V)

GATE CURRENT (mA)

GATE TRIGGER CURRENT VS.

JUNCTION TEMPERATURE

JUNCTION TEMPERATURE (°C)

100 (%)

GATE TRIGGER CURRENT (T

j

= t°C)

GATE TRIGGER CURRENT (T

j

= 25°C)

GATE TRIGGER VOLTAGE VS.

JUNCTION TEMPERATURE

JUNCTION TEMPERATURE (°C)

100 (%)

GATE TRIGGER VOLTAGE (T

j

= t°C)

GATE TRIGGER VOLTAGE (T

j

= 25°C)

10

1

10

3

7

5

3

2

–60 –20 20

10

2

7

5

3

2

60 100 140

4

–40 0 40 80 120

V

RGT I

V

RGT III

V

FGT I

V

FGT III

TYPICAL EXAMPLE

10

1

10

3

7

5

3

2

–60 –20 20

10

2

7

5

3

2

60 100 140

4

–40 0 40 80 120

I

FGT I

I

RGT III

I

RGT I

I

FGT III

TYPICAL EXAMPLE

2.0

1.6

1.2

0.8

0.4

02.00 0.4 0.8 1.2 1.6

360°

CONDUCTION

RESISTIVE,

INDUCTIVE

LOADS

160

120

100

60

20

01.60 0.2 0.6 1.0 1.4

40

80

140

0.4 0.8 1.2

RESISTIVE,

INDUCTIVE

LOADS

CURVES APPLY REGARDLESS

OF CONDUCTION ANGLE

NATURAL CONVECTION

10

1

2310

–1

5710

0

23 5710

1

23 5710

2

10

3

7

5

3

2

10

2

7

5

3

2

7

5

3

2

10

0

2310

2

5710

3

23 5710

4

23 5710

5

JUNCTION TO AMBIENT

JUNCTION TO CASE

MITSUBISHI SEMICONDUCTOR 〈TRIAC〉

BCR08AS-8

LOW POWER USE

NON-INSULATED TYPE, PLANAR PASSIVATION TYPE

Feb.1999

MITSUBISHI SEMICONDUCTOR 〈TRIAC〉

BCR08AS-8

LOW POWER USE

NON-INSULATED TYPE, PLANAR PASSIVATION TYPE

LACHING CURRENT VS.

JUNCTION TEMPERATURE

LACHING CURRENT (mA)

JUNCTION TEMPERATURE (°C)

HOLDING CURRENT VS.

JUNCTION TEMPERATURE

HOLDING CURRENT (mA)

JUNCTION TEMPERATURE (°C)

REPETITIVE PEAK OFF-STATE

CURRENT VS. JUNCTION

TEMPERATURE

JUNCTION TEMPERATURE (°C)

BREAKOVER VOLTAGE VS.

JUNCTION TEMPERATURE

JUNCTION TEMPERATURE (°C)

100 (%)

BREAKOVER VOLTAGE (T

j

= t°C)

BREAKOVER VOLTAGE (T

j

= 25°C)

COMMUTATION CHARACTERISTICS

CRITICAL RATE OF RISE OF OFF-STATE

COMMUTATING VOLTAGE (V/µs)

RATE OF DECAY OF ON-STATE

COMMUTATING CURRENT (A/ms)

BREAKOVER VOLTAGE VS.

RATE OF RISE OF

OFF-STATE VOLTAGE

RATE OF RISE OF OFF-STATE VOLTAGE (V/µs)

100 (%)

BREAKOVER VOLTAGE (dv/dt = xV/µs)

BREAKOVER VOLTAGE (dv/dt = 1V/µs)

160

100

80

40

20

014040–40–60 –20 0 20 60 80

140

100120

60

120

TYPICAL EXAMPLE

14040–40–60 –20 0 20 60 80 100120

105

7

5

3

2

104

7

5

3

2

103

7

5

3

2

102

TYPICAL EXAMPLE

14040–40–60 –20 0 20 60 80 100120

102

7

5

3

2

101

7

5

3

2

100

7

5

3

2

10–1

,,,,,,,,,,,

TYPICAL EXAMPLE

DISTRIBUTION

231005710

123 5710

223 5710

3

120

0

20

40

60

80

100

140

160

T

j

= 125°C

TYPICAL EXAMPLE

I QUADRANT

III QUADRANT

160–40 0 40 80 120

102

7

5

3

2

101

7

5

3

2

100

7

5

3

2

10–1

,,,,,,,,,,,

T

2

+

, G

–

TYPICAL EXAMPLE

TYPICAL

EXAMPLE

DISTRIBUTION

T

2

+

, G

+

T

2

–

, G

–

T

2

–

, G

+











100

2310–1 5710

023 5710

123 5710

2

102

7

5

3

2

101

7

5

3

2

7

5

3

2

10–1

TYPICAL

EXAMPLE

T

j

= 125°C

I

T

= 1A

τ = 500µs

V

D

= 200V

f = 3Hz

V

D

t

(dv/dt)

C

t

I QUADRANT

III QUADRANT

MINIMUM

CHARAC-

TERISTICS

VALUE

VOLTAGE WAVEFORM

CURRENT WAVEFORM

I

T

τ(di/dt)

C

100 (%)

REPETITIVE PEAK OFF-STATE CURRENT (T

j

= t°C)

REPETITIVE PEAK OFF-STATE CURRENT (T

j

= 25°C)

Feb.1999

GATE TRIGGER CURRENT VS.

GATE CURRENT PULSE WIDTH

GATE CURRENT PULSE WIDTH (µs)

100 (%)

GATE TRIGGER CURRENT (tw)

GATE TRIGGER CURRENT (DC)

10

1

10

3

7

5

3

2

10

0

23 5710

1

10

2

7

5

3

2

23 5710

2

4

44

I

RGT I

I

RGT III

I

FGT I

I

FGT III

TYPICAL EXAMPLE

MITSUBISHI SEMICONDUCTOR 〈TRIAC〉

BCR08AS-8

LOW POWER USE

NON-INSULATED TYPE, PLANAR PASSIVATION TYPE

6Ω6Ω

6V 6V

R

G

R

G

R

G

R

G

A

V

A

V

A

V

A

V

TEST PROCEDURE 1

TEST PROCEDURE 3

TEST PROCEDURE 2

TEST PROCEDURE 4

GATE TRIGGER CHARACTERISTICS

TEST CIRCUITS