IRF240 MECHANICAL DATA Dimensions in mm (inches) 40.01 (1.575) Max. 26.67 (1.050) Max. 4.47 (0.176) Rad. 2 Pls. N-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS 22.23 (0.875) Max. 11.43 (0.450) 6.35 (0.250) 1.09 (0.043) 0.97 (0.038) Dia. 1.63 (0.064) 1.52 (0.060) 12.19 (0.48) 11.18 (0.44) 30.40 (1.197) 29.90 (1.177) VDSS ID(cont) RDS(on) 200V 18A 0.18 4.09 (0.161) 3.84 (0.151) 2 Pls 2 11.18 (0.440) 10.67 (0.420) FEATURES 1 * HERMETICALLY SEALED TO3 METAL PACKAGE 16.97 (0.668) 16.87 (0.664) * SIMPLE DRIVE REQUIREMENTS TO3 METAL PACKAGE (TO204AA) * SCREENING OPTIONS AVAILABLE Underside View Pin 1 = Gate Pin 2 = Source Case = Drain ABSOLUTE MAXIMUM RATINGS (Tcase = 25C unless otherwise stated) VGS Gate - Source Voltage 20V ID Continuous Drain Current @ Tcase = 25C 18A ID Continuous Drain Current @ Tcase = 100C 11A IDM Pulsed Drain Current 72A PD Power Dissipation @ Tcase = 25C Linear Derating Factor 125W 1.0W/C TJ , Tstg Operating and Storage Temperature Range -55 to 150C RJC Thermal Resistance Junction to Case 1.0C/W max. RJA Thermal Resistance Junction to Ambient 30C/W max. Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Document Number 3332 Issue 1 IRF240 ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise stated) Parameter BVDSS Test Conditions STATIC ELECTRICAL RATINGS Drain - Source Breakdown Voltage VGS = 0 BVDSS Temperature Coefficient of TJ RDS(on) ID = 1mA Min. Typ. Max. 200 Reference to 25C V 0.29 V / C Breakdown Voltage ID = 1mA Static Drain - Source On-State VGS = 10V ID = 11A* 0.18 Resistance VGS = 10V ID = 18A* 0.21 VDS = VGS ID = 250A 2 VDS 15V IDS = 11A* 6.1 VGS = 0 VDS = 0.8BVDSS 25 TJ = 125C 250 VGS(th) Gate Threshold Voltage 4 gfs Forward Transconductance IDSS Zero Gate Voltage Drain Current IGSS Forward Gate - Source Leakage VGS = 20V 100 IGSS Reverse Gate - Source Leakage VGS = -20V -100 Ciss DYNAMIC CHARACTERISTICS Input Capacitance VGS = 0 1300 Coss Output Capacitance VDS = 25V 400 Crss Reverse Transfer Capacitance f = 1MHz 130 Qg Total Gate Charge Qgs Gate - Source Charge Qgd Gate - Drain ("Miller") Charge td(on) Turn-On Delay Time tr Rise Time VDD = 100V 152 td(off) Turn-Off Delay Time ID = 18A 58 tf Fall Time RG = 9.1 67 IS SOURCE - DRAIN DIODE CHARACTERISTICS Continuous Source Current 18 ISM Pulse Source Current 72 VSD Diode Forward Voltage trr Reverse Recovery Time IS = 18A Qrr Reverse Recovery Charge di / dt 100A/s VDD 50V LD PACKAGE CHARACTERISTICS Internal Drain Inductance LS Internal Source Inductance VGS = 10V ID = 18A VDS = 0.5BVDSS Unit V () S( A nA pF 32 60 2.2 10.6 14 38 nC 20 IS = 18A TJ = 25C VGS = 0 TJ = 25C (from 6mm down drain lead pad to centre of die) 5.0 (from 6mm down source lead to centre of source bond pad) 13 ns A 1.5 V 500 ns 5.3 C nH * Pulse width 300s; Duty Cycle 2% Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Document Number 3332 Issue 1