HMIC™ Silicon PIN Diode Switches
with Integrated Bias Network
Rev. V6
MA4SWx10B-1 Series
1
1
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
1
Features
Broad Bandwidth Specified 2 - 18 GHz
Usable up to 26 GHz
Integrated Bias Network
Lower Insertion Loss / Higher Isolation
Fully Monolithic, Glass Encapsulated Chip
Up to +33 dBm CW Power Handling @ +25°C
RoHS* Compliant
Description
The MA4SW210B-1 (SP2T) and MA4SW310B-1
(SP3T) broadband switches with an integrated bias
networks utilizing MACOM’s HMICTM (Heterolithic
Microwave Integrated Circuit) process, US Patent
5,268,310. This process allows the incorporation of
silicon pedestals that form series and shunt diodes
or vias by imbedding them in low loss, low
dispersion glass. By using small spacing between
circuit elements, this combination of silicon and
glass gives HMIC devices low loss and high isolation
performance with exceptional repeatability through
low millimeter frequencies.
The top side of the chip is protected by a polymer
coating for manual or automatic handling and large
gold bond pads help facilitate connection of low
inductance ribbons. The gold metallization on the
backside of the chip allows for attachment via 80/20
(gold/tin) solder or conductive silver epoxy.
Ordering Information
Part Number Package
MA4SW210B-1 Gel Pack
MA4SW310B-1 Gel Pack
*Restrictions on Hazardous Substances, European Union Directive 2011/65/EU.
MA4SW210B-1 (SP2T)
Functional Diagrams1
MA4SW310B-1 (SP3T)
1. Yellow areas indicate ribbon/wire bonding pads
HMIC™ Silicon PIN Diode Switches
with Integrated Bias Network
Rev. V6
MA4SWx10B-1 Series
2
2
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
2
Electrical Specifications: TA = 25°C, 20 mA
Parameter Test Conditions Units Min. Typ. Max.
Insertion Loss
2 GHz
6 GHz
12 GHz
18 GHz
dB —
1.5
0.7
0.9
1.2
1.8
1.0
1.2
1.8
Isolation
2 GHz
6 GHz
12 GHz
18 GHz
dB
55
47
40
36
60
50
45
40
—
Input Return Loss
2 GHz
6 GHz
12 GHz
18 GHz
dB —
14
15
15
13
—
Switching Speed2 — ns — 50 —
MA4SW210B-1 (SPDT)
MA4SW310B-1 (SP3T)
Parameter Test Conditions Units Min. Typ. Max.
Insertion Loss
2 GHz
6 GHz
12 GHz
18 GHz
dB —
1.6
0.8
1.0
1.3
2.0
1.1
1.3
1.9
Isolation
2 GHz
6 GHz
12 GHz
18 GHz
dB
54
47
40
36
59
50
45
40
—
Input Return Loss
2 GHz
6 GHz
12 GHz
18 GHz
dB —
14
15
16
14
—
Switching Speed2 — ns — 50 —
1. Typical switching speed is measured from (10% to 90% and 90% to 10% of detected RF voltage), driven by TTL compatible drivers. In the
modulating state, (the switching port is modulating, all other ports are in steady state isolation.) The switching speed is measured using an
RC network using the following values: R = 50 - 200 Ω, C = 390 - 1000 pF. Driver spike current, IC = C dv/dt, ratio of spike current to steady
state current, is typically 10:1.
HMIC™ Silicon PIN Diode Switches
with Integrated Bias Network
Rev. V6
MA4SWx10B-1 Series
3
3
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
3
Absolute Maximum Ratings3,4,5
Parameter Absolute Maximum
RF CW Incident Power +33 dBm
Reverse Voltage -50 V
Bias Current per Port ±50 mA @ +25°C
Operating Temperature -65°C to +125°C
Storage Temperature -65°C to +150°C
Junction Temperature +175°C
3. Exceeding any one or combination of these limits may cause
permanent damage to this device.
4. MACOM does not recommend sustained operation near these
survivability limits.
5. Maximum operating conditions for a combination of RF power,
DC bias and temperature: +33 dBm CW @ 15 mA (per diode)
@ +85°C.
Handling Procedures
Please observe the following precautions to avoid
damage:
Static Sensitivity
These electronic devices are sensitive to
electrostatic discharge (ESD) and can be damaged
by static electricity. Proper ESD control techniques
should be used when handling these Class 0
(HBM) and Class C1 (CDM).devices.
Cleanliness
The chips should be handled in a clean environment
free of dust and organic contamination.
Wire / Ribbon Bonding
Thermo compression wedge bonding using 0.003” x
0.00025” ribbon or 0.001” diameter gold wire is
recommended. A work stage temperature of
150°C - 200°C, tool tip temperature of 120°C - 150°
and a downward force of 18 to 22 grams should be
used. If ultrasonic energy is necessary, it should be
adjusted to the minimum level required to achieve a
good bond. Excessive power or force will fracture
the silicon beneath the bond pad causing it to lift.
RF bond wires and ribbons should be kept as short
as possible for optimum RF performance.
Chip Mounting
HMIC switches have Ti-Pt-Au backside metallization
and can be mounted using a gold-tin eutectic solder
or conductive epoxy. Mounting surface must be free
of contamination and flat.
Eutectic Die Attachment
An 80/20, gold-tin, eutectic solder is recommended.
Adjust the work surface temperature to 255oC and
the tool tip temperature to 265oC. After placing the
chip onto the circuit board re-flow the solder by
applying hot forming gas (95/5 Ni/H) to the top
surface of the chip. Temperature should be
approximately 290oC and not exceed 320oC for
more than 20 seconds. Typically no more than three
seconds is necessary for attachment. Solders rich in
tin should be avoided
Epoxy Die Attachment
A minimum amount of epoxy, 1 - 2 mils thick, should
be used to attach chip. A thin epoxy fillet should be
visible around the outer perimeter of the chip after
placement. Epoxy cure time is typically 1 hour at
150°C.
HMIC™ Silicon PIN Diode Switches
with Integrated Bias Network
Rev. V6
MA4SWx10B-1 Series
4
4
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
4
Typical RF Performance at TAMB = +25°C, 20 mA Bias Current
ISOLATION vs FREQUENCY
MA4SW210B-1
-70
-60
-50
-40
-30
-20
-10
0
0 2 4 6 8 10 12 14 16 18 20 22 24 26
FREQUENCY, GHz
ISOLATION, dB
INSERTION LOSS vs FREQUENCY
MA4SW210-B1
-8
-6
-4
-2
0
2
0 2 4 6 8 10 12 14 16 18 20 22 24 26
FREQUENCY, GHz
INSERTION LOSS, dB
-70
-60
-50
-40
-30
-20
-10
0
0 2 4 6 8 10 12 14 16 18 20 22 24 26
FREQUENCY, GHz
ISOLATION, dB
INSERTION LOSS vs FREQUENCY
MA4SW310B-1
-8
-7
-6
-5
-4
-3
-2
-1
0
1
2
0 2 4 6 8 10 12 14 16 18 20 22 24 26
FREQUENCY, GHz
INSERTION LOSS, dB
RETURN LOSS vs FREQUENCY
MA4SW310B-1
-40
-35
-30
-25
-20
-15
-10
-5
0
0 2 4 6 8 10 12 14 16 18 20 22 24 26
FREQUENCY, GHz
RETURN LOSS, dB
RETURN LOSS vs FREQUENCY
MA4SW210B-1
-40
-35
-30
-25
-20
-15
-10
-5
0
0 2 4 6 8 10 12 14 16 18 20 22 24 26
FREQUENCY, GHz
RETURN LOSS, dB
HMIC™ Silicon PIN Diode Switches
with Integrated Bias Network
Rev. V6
MA4SWx10B-1 Series
5
5
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
5
6. The MA4SW310B-1 contains the same PIN diodes and will have similar performance.
20
40
60
80
100
120
140
10.00 15.00 20.00 25.00 30.00 35.00
Tjunction ( Deg. C )
C.W. Incident Power ( dBm )
MA4SW210B-1 Series Diode Junction Temperature vs. Incident Power at 8 GHz
Series Diode_5mA
Series Diode_10mA
Series Diode_20mA
5 mA
20 mA
10 mA
0.00
0.10
0.20
0.30
0.40
0.50
0.60
0.70
0.80
10.00 15.00 20.00 25.00 30.00 35.00
Compression Power ( dB )
C.W. Incident Power ( dBm )
MA4SW210B-1 Compression Power vs. Incident Power at 8 GHz
Series Diode_5mA
Series Diode_10mA
Series Diode_20mA
5 mA
10 mA
20 mA
HMIC™ Silicon PIN Diode Switches
with Integrated Bias Network
Rev. V6
MA4SWx10B-1 Series
6
6
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
6
Driver / Bias Connections
MA4SW210B-1 (SP2T) MA4SW310B-1 (SP3T)
DC Control Current (mA) RF Output States
J4 J5 J1-J2 J1-J3
-20 +20 low loss Isolation
+20 -20 Isolation low loss
DC Control Current (mA) RF Output States
J5 J6 J7 J1-J2 J1-J3 J1-J4
-20 +20 +20 low loss Isolation Isolation
+20 -20 +20 Isolation low loss Isolation
+20 +20 -20 Isolation Isolation low loss
Operation of MA4SWx10B-1 Series
Operation of the MA4SWx10B-1 series PIN diode switches is achieved by simultaneous application of DC
currents to the bias pads. The required levels for the different states are shown in the tables below. The control
currents should be supplied by constant current sources. The nominal 40 - 60 Ω pull-up resistor voltage @ J4 and
J5 is usually -1 V for -20 mA and +20 mA for +1 V.
MA4SW210B-1 (SP2T)
MA4SW310B-1 (SP3T)
J1 RFIN
RFOUT
J3
J5
BIASIN
RFOUT
J2
J4
BIASIN
J1 RFIN
RFOUT
J4
J7
BIASIN
RFOUT
J2
J5
BIASIN
RFOUT BIASIN
J6
J3
HMIC™ Silicon PIN Diode Switches
with Integrated Bias Network
Rev. V6
MA4SWx10B-1 Series
7
7
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
7
Chip Outline Drawings7,8
7. Topside and backside metallization is gold, 2.5 µm thick typical.
8. Yellow areas indicate ribbon/wire bonding pads
DIM INCHES MM
MIN. MAX. MIN. MAX.
A 0.066 0.070 1.680 1.780
B 0.048 0.052 1.230 1.330
C 0.004 0.100 0.006 0.150
D 0.004 0.090 0.006 0.140
E 0.012 0.292 0.013 0.317
F 0.029 0.735 0.030 0.760
G 0.030 0.766 0.031 0.791
H 0.029 0.732 0.030 0.757
J 0.005 REF. 0.129 REF.
K 0.005 REF. 0.129 REF.
MA4SW210B-1
MA4SW310B-1
DIM INCHES MM
MIN. MAX. MIN. MAX.
A 0.071 0.072 1.807 1.833
B 0.071 0.072 1.797 1.823
C 0.0045 0.100 0.0055 0.150
D 0.031 0.781 0.032 0.807
E 0.029 0.732 0.030 0.758
F 0.006 0.152 0.007 0.178
G 0.004 0.099 0.005 0.125
H 0.005 0.125 0.006 0.151
J 0.034 0.035 0.871 0.897
K 0.064 0.065 1.617 1.643
L 0.066 0.067 1.683 1.709
M 0.005 REF. 0.1250 REF.
N 0.0046 REF. 0.1180 REF.
Mouser Electronics
Authorized Distributor
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MACOM:
MA4SW210B-1 MA4SW310B-1