DATA SHEET THYRISTORS 03P4MG,03P6MG 300 mA HIGH-WITHSTANDING-VOLTAGE MOLD SCR PACKAGE DRAWING (Unit: mm) DESCRIPTION The 03P4MG and 03P6MG are P-gate fully diffused mold SCRs with an average on-state current of 300 mA. The repeat peak off-state voltages (and reverse voltages) are 400 and 600 V. 5.2 MAX. 5.5 MAX. Electrode connection 1: Gate 2: Anode 3: Cathode FEATURES 12.7 MIN. 1.5 * 400 and 600 V high-withstanding-voltage series of products * The non-repetitive withstanding voltage is a high 700 V, making it easy to harmonize the rise voltage of the surge absorber. * High-sensitivity thyristor (IGT = 3 to 50 A) * Employs flame-retardant epoxy resin (UL94V-0) 0.5 *TC test bench-mark Standard weight: 0.3 g 1.27 1 2 3 4.2 MAX. Leakage breakers, SSRs, various type of alarms, consumer electronic equipments and automobile electronic components 1.77 MAX. 2.54 APPLICATIONS ABSOLUTE MAXIMUM RATINGS (TA = 25C) Parameter Symbol Ratings 03P4MG 03P6MG Unit Remarks Non-repetitive Peak Reverse Voltage VRSM 700 700 V RGK = 1 k Non-repetitive Peak Off-state Voltage VDSM 700 700 V RGK = 1 k Repetitive Peak Reverse Voltage VRRM 400 600 V RGK = 1 k Repetitive Peak Off-state Voltage VDRM 400 600 V RGK = 1 k Average On-state Current IT(AV) 300 (TA = 30C, Single half-wave, = 180) mA Refer to Figure 10. Effective On-state Current IT(RMS) 470 mA - ITSM 8 (f = 50 Hz, Sine half-wave, 1 cycle) A Refer to Figure 2. 2 Surge On-state Current Fusing Current iT dt 0.15 (1 ms t 10 ms) As - Critical Rate of On-state Current of Rise dIT/dt 20 A/s - PGM 100 (f 50 Hz, Duty 10%) mW Refer to Figure 3. PG(AV) 10 mW Refer to Figure 3. Peak Gate Forward Current IFGM 100 (f 50 Hz, Duty 10%) mA - Peak Gate Reverse Voltage VRGM 6 V - Junction Temperature Tj -40 to +125 C - Storage Temperature Tstg -55 to +150 C - Peak Gate Power Dissipation Average Gate Power Dissipation 2 The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. D15290EJ4V0DS00 (4th edition) Date Published February 2003 NS CP(K) Printed in Japan The mark shows major revised points. 2002 03P4MG,03P6MG ) ELECTRICAL CHARACTERISTICS (Tj = 25C, RGK = 1 k Parameter Symbol Non-repetitive Peak Reverse Conditions IRRM VRM = VRRM Current Non-repetitive Peak Off-state IDRM VDM = VDRM dVD/dt Unit Remarks MIN. TYP. MAX. Tj = 25C - - 10 A - Tj = 125C - - 100 A - Tj = 25C - - 10 A - Tj = 125C - - 100 A - 2 Tj = 125C, VDM = VDRM 3 10 - - V/s - Current Critical Rate-of-rise of Off-state Specifications Voltage On-state Voltage VT IT = 4 A - - 2.2 V Refer to Figure 1. Gate Trigger Current IGT VDM = 6 V, RL = 100 3 - 50 A - Gate Trigger Voltage VGT VDM = 6 V, RL = 100 - - 0.8 V - VGD VDRM Tj = 125C, VDM = 2 0.2 - - V - Gate Non-trigger Voltage Holding Current IH VDM = 24 V, ITM = 4 A - - 5 mA - Turn-off Time tq Tj = 125C, IT = 200 mA, - 60 - s - dIR/dt = 15 A/s, VR 25 V, 2 VDM = 3 VDRM, dVD/dt = 10 V/s Thermal Resistance Rth(j-C) Junction-to-case DC - - 50 C/W Refer to Figure 14. Rth(j-A) Junction-to-ambient DC - - 230 C/W Refer to Figure 14. TYPICAL CHARACTERISTICS (TA = 25C) Figure 1. iT vs. T Characteristics MAX. At initial, Tj = 125C 14 Surge On-state Current ITSM (A) On-state Current iT (mA) 10000 Figure 2. ITSM Rating 1000 Tj = 125C 25C 100 ITSM 12 10 ms 20 ms 10 8 6 4 2 10 0 1 2 3 0 1 On-state Voltage T (V) 2 5 10 Cycles (N) Data Sheet D15290EJ4V0DS 50 100 03P4MG,03P6MG Figure 3. Gate Rating Figure 4. Example of Gate Characteristics 1.2 Gate Trigger Voltage VGT (V) Gate Forward Voltage VFG (V) 5.0 4.0 3.0 PGM = 100 mW 2.0 PG(AV) = 10 mW 1.0 1.0 Tj = -40C 0C 0.8 25C 0.6 0.4 0.2 IFG = 100 mA 0 0 0 20 40 60 80 100 Gate Forward Current IFG (mA) 120 0 Figure 5. IGT vs. TA Example of Characteristics 100 150 200 250 300 Gate Trigger Current IGT (A) 350 Figure 6. VGT vs. TA Example of Characteristics 1.2 Gate Trigger Voltage VGT (V) 100 Gate Trigger Current IGT (A) 50 10 1 1.0 0.8 0.6 0.4 0.2 0.1 0 -40 -20 0 20 40 60 80 100 120 140 Ambient Temperature TA (C) Figure 7. iGS vs. Example of Characteristics Figure 8. GT vs. Example of Characteristics 1.0 10 TA = 25C TA = 25C iGS 5 Gate Trigger Voltage GT (V) Supply Gate Trigger Current iGS (mA) -40 -20 0 20 40 60 80 100 120 140 Ambient Temperature TA (C) RGK 1 k 1 0.5 0.8 0.6 0.4 0.2 0.1 1 10 100 Pulse Width (s) 1000 0 Data Sheet D15290EJ4V0DS 1 10 100 Pulse Width (s) 1000 3 03P4MG,03P6MG 0.7 Figure 10. TA vs. IT(AV) Characteristics Single Half-wave Single Half-wave 120 Ambient Temperature TA (C) Average On-state Power Dissipation PT(AV) (W) Figure 9. PT(AV) vs. IT(AV) Characteristics 0.6 DC 0.5 = 180 120 0.4 90 0.3 60 0.2 30 80 60 40 20 0.1 0 100 0 0 100 200 300 400 Average On-state Current IT(AV) (mA) 500 30 0 0.6 0.5 120 90 0.4 = 180 60 0.3 30 0.2 80 60 40 0 100 200 300 400 Average On-state Current IT(AV) (mA) 500 Figure 13. IH vs. TA Example of Characteristics 10 Holding Current IH (mA) 5 1 0.5 0.1 4 100 30 0 500 120 20 0.1 0 100 200 300 400 Average On-state Current IT(AV) (mA) Single Full-wave Single Full-wave 0.7 DC Figure 12. TA vs. IT(AV) Characteristics Ambient Temperature TA (C) Average On-state Power Dissipation PT(AV) (W) Figure 11. PT(AV) vs. IT(AV) Characteristics 60 90 120 = 180 -40 -20 0 20 40 60 80 100 120 140 Ambient Temperature TA (C) Data Sheet D15290EJ4V0DS 0 60 90 120 = 180 100 200 300 400 Average On-state Current IT(AV) (mA) 500 03P4MG,03P6MG Figure 14. Zth Characteristics Transient Thermal Impedance Zth (C/W) 1000 Connection to ambient 100 10 1 0.001 0.01 0.1 1 10 100 1000 Time t (s) Data Sheet D15290EJ4V0DS 5 03P4MG,03P6MG * The information in this document is current as of February, 2003. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. 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