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THYRISTORS
03P4MG,03P6MG
300 mA HIGH-WITHSTANDING-VOLTAGE MOLD SCR
D ATA SHEE T
Document No. D15290EJ4V0DS00 (4th edition)
Date Published February 2003 NS CP(K)
Printed in Japan 2002
The mar k ★
★★
★ shows major revised points.
DESCRIPTION
The 03P4MG and 03P6MG are P-gate fully diffused mold SCRs
with an average on-state current of 300 mA. The repeat peak
off-state voltages (and reverse voltages) are 400 and 600 V.
FEATURES
• 400 and 600 V high-withstanding-voltage series of products
• The non-repetitive withstanding voltage is a high 700 V, making
it easy to harmonize the rise voltage of the surge absorber.
• High-sensitivity thyristor (IGT = 3 to 50
µ
A)
• Employs flame-retardant epoxy resin (UL94V-0)
APPLICATIONS
Leakage breakers, SSRs, various type of alarms, consumer
electronic equipments and automobile electronic components
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Parameter Symbol Ratings Unit Remarks
03P4MG 03P6MG
Non-repetiti ve P eak Reverse Voltage VRSM 700 700 V RGK = 1 kΩ
Non-repetiti ve P eak Off -st ate Voltage VDSM 700 700 V RGK = 1 kΩ
Repetitive Peak Reverse Voltage VRRM 400 600 V RGK = 1 kΩ
Repetitive Peak Off-state Voltage VDRM 400 600 V RGK = 1 kΩ
Average On-state Current IT(AV) 300 (TA = 30°C, Single half-wave,
θ
= 180°) mA Refer to Figure 10.
Effective On-state Current IT(RMS) 470 mA −
Surge On-state Current ITSM 8 (f = 50 Hz, Sine half-wave, 1 cycle) A Refer to Figure 2.
Fusing Current
∫
iT2dt 0.15 (1 ms ≤ t ≤ 10 ms) A2s−
Critic al Rate of On-st ate Current of Rise dIT/dt 20 A/
µ
s−
Peak Gate Power Dissi pation PGM 100 (f ≥ 50 Hz, Duty ≤ 10%) mW Refer to Figure 3.
Average Gate Power Dissipation PG(AV) 10 mW Refer to Figure 3.
Peak Gate Forward Current IFGM 100 (f ≥ 50 Hz, Duty ≤ 10%) mA −
Peak Gate Revers e Voltage VRGM 6V−
Junction Temperature Tj−40 to +125 °C −
Storage Temperature Tstg −55 to +150 °C −
PACKAGE DRAWING (Unit: mm)
1.27 2.54
1.77 MAX.
4.2 MAX.
13
1.5
12.7 MIN. 5.5 MAX.
5.2 MAX.
φ
0.5
2
Electrode con nec tion
1: Gate
2: Anode
3: Cathode
*TC test bench-mark
Standard weight: 0.3 g
★
★★
★
Data Sheet D15290EJ4V0DS
2
03P4MG,03P6MG
ELECTRICAL CHARACTERISTICS (Tj = 25°C, RGK = 1 kΩ
ΩΩ
Ω)
Parameter Symbol Conditions Specifications Unit Remarks
MIN. TYP. MAX.
Non-repetiti ve P eak Reverse IRRM VRM = V RRM Tj = 25°C −−10
µ
A−
Current Tj = 125°C −−100
µ
A−
Non-repetiti ve P eak Off -st ate IDRM VDM = V DRM Tj = 25°C −−10
µ
A−
Current Tj = 125°C −−100
µ
A−
Critical Rate-of-rise of Off-state dVD/dt 10 −−V/
µ
s−
Voltage
Tj = 125°C, VDM = 3
2VDRM
On-state Voltage VTIT = 4 A −−2.2 V Refer to Figure 1.
Gate Trigger Current IGT VDM = 6 V , RL = 100 Ω3−50
µ
A−
Gate Trigger Voltage VGT VDM = 6 V , RL = 100 Ω−−0.8 V −
Gate Non-trigger V oltage VGD Tj = 125°C, VDM = 2
VDRM 0.2 −−V−
Holding Current IHVDM = 24 V, ITM = 4 A −−5mA −
Turn-off Time tqTj = 125°C, IT = 200 mA, −60 −
µ
s−
dIR/dt = 15 A/
µ
s, VR ≥ 25 V,
VDM = 2
3 VDRM, dV D/ dt = 10 V/
µ
s
Thermal Resist ance Rth(j-C) Junction-to-case DC −−50 °C/W Refer to Figure 14.
Rth(j-A) Juncti on-to-ambient DC −−230 °C/W Refer to Figure 14.
TYPICAL CHARACTERISTICS (TA = 25°C)
Figure 1. iT vs. υ
υυ
υT Characteristics Figure 2. ITSM Rating
On-state Current iT (mA)
MAX.
0123
T
j
= 125˚C
25˚C
10000
1000
100
10
On-state Voltage υT (V)
Surge On-state Current ITSM (A)
At initial, T
j
= 125˚C
I
TSM
10 ms 20 ms
14
12
10
8
6
4
2
01 10 100550
Cycles (N)
Data Sheet D15290EJ4V0DS 3
03P4MG,03P6MG
Figure 3. Gate Rating Figure 4. Example of Gate Characteristics
Gate Forward Voltage VFG (V)
P
G(AV)
= 10 mW
P
GM
= 100 mW
I
FG
= 100 mA
5.0
4.0
3.0
2.0
1.0
00 20 40 60 80 100 120
Gate Forward Current IFG (mA)
Gate Trigger Voltage VGT (V)
Tj = −40˚C
0˚C
25˚C
1.2
1.0
0.8
0.6
0.4
0.2
00 100 200 30050 150 250 350
Gate Trigger Current IGT (
µ
A)
Figure 5. IGT vs. TA Example of Characteristics Figure 6. VGT vs. TA Example of Characteristics
Gate Trigger Current IGT (
µ
A)
100
10
1
0.1 −40 −20 0 40 8020 60 100 140120
Ambient Temperature TA (°C)
Gate Trigger Voltage VGT (V)
−40 −20 0 40 8020 60 100 140120
1.2
1.0
0.8
0.6
0.2
0.4
0
Ambient Temperature TA (°C)
Figure 7. iGS vs. τ
ττ
τ Example of Characteristics Figure 8. υ
υυ
υGT vs. τ
ττ
τ Example of Characteristics
Supply Gate Trigger Current iGS (mA)
T
A
= 25˚C
i
GS
R
GK
1 kΩ
10
5
1
0.5
0.11 10 1000100
Pulse Width τ (
µ
s)
Gate Trigger Voltage υGT (V)
T
A
= 25˚C
1 10 1000100
1.0
0.8
0.6
0.4
0.2
0
Pulse Width τ (
µ
s)
Data Sheet D15290EJ4V0DS
4
03P4MG,03P6MG
Figure 9. PT(AV) vs. IT(AV) Characteristics Figure 10. TA vs. IT(AV) Characteristics
Average On-state P ower Diss i pation PT(AV) (W)
30˚60˚90˚120˚
DC
Single Half-wave
0.7
0.6
0.5
0.4
0.3
0.2
0.1
00 100 200 400300 500
= 180˚
θ
θ
Average On-state Current IT(AV) (mA )
Ambient Temperature TA (°C)
30˚60˚90˚120˚DC
Single Half-wave
120
100
80
60
40
20
00 100 200 400300 500
= 180˚
θ
θ
Average On-state Current IT(AV) (mA )
Figure 11. PT(AV) vs. IT(AV) Characteristics Figure 12. TA vs. IT(AV) Characteristics
Average On-state P ower Diss i pation PT(AV) (W)
Single Full-wave
0.7
0.6
0.5
0.4
0.3
0.2
0.1
00 100 200 400300 500
= 180˚
θ
30˚
60˚90˚120˚
θ
Average On-state Current IT(AV) (mA )
Ambient Temperature TA (°C)
Single Full-wave
30˚60˚90˚120˚
120
100
80
60
40
20
00 100 200 400300 500
= 180˚
θ
θ
Average On-state Current IT(AV) (mA )
Figure 13. IH vs. TA Example of Characteristics
Holding Current I H (mA)
10
5
1
0.5
0.1 −40 −20 0 40 8020 60 100 140120
Ambient Temperature TA (°C)
Data Sheet D15290EJ4V0DS 5
03P4MG,03P6MG
Figure 14. Zth Characteristi cs
Transient Thermal Impedance Zth (°C/W)
1000
100
10
1
0.001 0.01 0.1 1 10 100 1000
Connection to
ambient
Time t (s)
03P4MG,03P6MG
The information in this document is current as of February, 2003. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC Electronics data
sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not
all products and/or types are available in every country. Please check with an NEC Electronics sales
representative for availability and additional information.
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M8E 02. 11-1
