SPEC SHEET 2N5294 Chip Appearance Chip Size 1.9mm x 1.9mm Chip Thickness 230 20m Bonding Pad Dimension Base 665m x 315m Emitter 555 m x 325 m 50m Al Ti-Ni-Ag 4 inch Scribe Line Width Top Metal Back Metal Raper Size Absolute Max Ratings (Ta=25C) Item Symbol (TO-220) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Loss (Power Dissipation) Junction Temperature Storage Temperature V CBO V CEO V EBO IC PC Tj T stg Electrical Characteristics (Ta=25C) Item Symbol Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current DC Current Gain Collector Saturation V BE B V CEO I CBO I EBO I CEO h FE V CE(SAT) Unit 80 70 7 4 36 Note V V V mA W C C -65 to +150 (TO-220) Min. Typ. B V CBO 80 - - V IC = 100 A B V CEO 70 - - V IC = 200 mA B V EBO 7 - - V IE = 100 A I CBO I EBO h FE V CE(SAT) 30 - - 1 120 1 A mA V VCB = V VEB = 7V VCE = 4 V, IC = 500mA IC = 500mA, IB = 50mA Probing Spec (Ta=25C) No. Mode 1 2 3 4 5 6 7 Max Ratings Min. Limit Max. 70 30 - 1 120 1 Max. Unit Condition Condition Unit V V A mA A V IB= I C = 200mA V CB = V V EB = 7V V CE = V V CE = 4 V, I C = 500A I C = 500mA, I B = 50mA