N-Channel JFET
Monolithic Dual
SST440 / SST441
FEATURES
••High Gain . . . . . . . . . . . . . . . . . . . . . . . gfs > 6 mS typical
••Lo w Leakage . . . . . . . . . . . . . . . . . . . . . . IG < 1pA typical
••Lo w Noise
••Surfa ce M ount P a ck a ge
APPLICATIONS
••Different ial Wid eband Am plifiers
••VHF/UHF Am pli fiers
••Test and Measurement
DESCRIPTION
Calogic’s SST440 Series is a high speed N-Channel
Monolithic Dual JFET in a surf ace mount SO-8 package. This
device is well suited for use as wideband diff erential amplifiers
in test and measurement applications. The combination of
high gain, low leakage and low noise make it an excellent
performer.
ORDERING INFORMATION
Part Pac ka ge T em perature Range
SST440-1 Plastic SO-8 -55oC to +150oC
NOTE: For Sorted Chips in Carriers, See U440 Series
PIN CONFI G U RAT ION
CORPORATION
SO-8
TOP VIEW
(1) S1
(2) D1
(3) G1
(4) N/C
N/C (8)
G2 (7)
D2 (6)
S2 (5)
CJ1
PRODUCT MARKIN G
SST440 SST440
SST441 SST441
SST440 / SST441
CORPORATION
ABSOLUTE M AXIMUM R ATING S (TA = 25oC unless ot he rwise no te d)
P ar amete r/ Test Con di tio n Symbol Lim it Unit
Gate-Drain V oltage VGD -25 V
Gate-Source V oltage VGS -25 V
Forward Gate Current IG50 mA
Power Dissipation (per side) PD300 mW
(total) 500 mW
Pow er Derat ing (per side) 2 .4 mW / oC
(total) 4 mW/ oC
Oper ating Junc tion Tem peratu re TJ-55 t o 150 oC
Storage Temperature Tstg -55 t o 150 oC
Lead Temper at ure (1/1 6" from case f or 10 sec onds ) TL300 oC
ELECTRICAL CHARACTERISTIC S (TA = 25oC unless other wise noted)
SYMBOL CHARACTERISTCS TYP1SST440 SST441 UNIT TEST CONDITIONS
MIN MAX MIN MAX
STATIC
V(BR)GSS Gate-Source Breakdown Vo ltage -35 -25 -25 VIG = -1µA, VDS = 0V
VGS(OFF) Gate-Source Cut off Voltage -3.5 -1 -6 -1 -6 VDS = 10V, ID = 1nA
IDSS Saturation Drain Current 215630630 mAV
DS = 10V, VGS = 0V
IGSS Gate Reverse Current -1 -500 -500 pA VGS = -15 V, VDS = 0V
-0.2 nA TA = 125oC
IGGate Operating Current -1 -500 -500 pA VDG = 10V, ID = 5mA
-0.2 nA TA = 125oC
VGS(F) Gate-Source Forward Vo ltage 0.7 V IG = 1mA, VDS = 0V
DYNAMIC
gfs Common-Source Forward Transconductance 6 4.5 9 4.5 9 mS VDG = 10V, ID = 5mA
f = 1kHz
gos Common-Source Output Conductance 20 200 200 µS
gfs Common-Source Forward Transconductance 5.5 mS VDG = 10V, ID = 5mA
f = 100MHz
gos Common-Source Output Conductance 30 µS
Ciss Common-Source Input Capacitance 3.5 pF VDG = 10V, ID = 5mA
f = 1MHz
Crss Common-Source Reverse Transf er Capacitance 1
enEquivalent Input Noise Vo ltage 4 nV/ Hz VDG = 10V, ID = 5mA
f = 10kHz
MATCHING
| VGS1-VGS2| Differential Gate-Source Voltage 7 10 20 mV VDG = 10V, ID = 5mA
∆ | VGS1-VGS2|
∆TGate-Source Voltage Differential Change with
Temperature 10 µV/ oCT = -55 to 25oCVDG =10V,
ID = 5mA
10 T = 25 t o 125oC
IDSS1
IDSS2 Saturation Drain Current Ratio 0.98 VDS = 10V, VGS = 0V
gfs1
gfs2 Transconductance Ratio 0.98 VDG = 10V, ID = 5mA
f= 1 kHz
CMRR Common Mode Rejection Ratio 90 dB VDD = 5 to 10V, ID = 5mA
NOTES: 1. For design aid only, not subje ct to produ ction te sting .
2. Pulse test; PW = 3 00 µs, duty cycle ≤ 3% .
