PRODUCT SELECTION GUIDE
PARAMETER WS57C128FB-45 WS57C128FB-55 WS57C128FB-70
Address Access Time (Max) 45 ns 55 ns 70 ns
Chip Select Time (Max) 45 ns 55 ns 70 ns
Output Enable Time (Max) 25 ns 25 ns 25 ns
WS57C128FB
TOP VIEW
Chip Carrier CERDIP
PIN CONFIGURATION
4-15
MILITARY HIGH SPEED 16K
x
8 CMOS EPROM
KEY FEATURES
•Ultra-Fast Access Time •Standard EPROM Pinout
— 45 ns •DIP and Surface Mount Packaging
•Low Power Consumption Available
•EPI Processing
— Latch-up Immunity Up to 200 mA
GENERAL DESCRIPTION
The WS57C128FB is a High Performance 128K UV Erasable Electrically Programmable Read Only Memory. It is
manufactured with an advanced CMOS technology which enables it to operate at Bipolar speeds while consuming
only 90 mA.
Two major features of the WS57C128FB are its Low Power and High Speed. These features make it an ideal
solution for applications which require fast access times, low power, and non-volatility. Typical applications include
systems which do not utilize mass storage devices and/or are board space limited.
The WS57C128FB is configured in the standard EPROM pinout which provides an easy upgrade path for systems
which are currently using standard EPROMs. The EPROMs are available in both 600 Mil DIP packages, and
leadless surface mount packages.
PINS PGM CE OE VPP VCC OUTPUTS
MODE
Read X VIL VIL VCC VCC DOUT
Output
Disable XXV
IH VCC VCC High Z
Standby X VIH XV
CC VCC High Z
Program VIL VIL VIH VPP VCC DIN
Program
Verify VIH VIL VIL VPP VCC DOUT
Program
Inhibit XV
IH XV
PP VCC High Z
MODE SELECTION
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