' mT Y- RELIABILITY BWR FET VA a Mit AB (Physical Dimension) 5, 2max 4.2ma (fiz: mm) E:Emitter x C:Collector MGB AGM (12=25'0) i =e (Absolute Maximum Ratings) 2SA830_JEDEG: T0-92 iA B 2c # x Fu ed cid L 2SA831 EIAL :SC-43 Sa nage STI SAR), 40 y * D7 +N DBE CBO 7 | 28791, 2S A831 25 2S A7M, 25 4830 32 dale! 0. 50 lo. 45 IL2O4- Tiv9BRLH V Vv ee . =) 2S A791, 2SA831 ces 20 wa Sia TLEiv9-N-2SE VEBO 6 Vv Ec Ic 300 LOO Si % mA LC pulse 1500~ somaxa 82x ALI Po 300 mW S et OM ALE Ti 125 c [ TE [P 28i80rovo:rte m1 SFY _. _ % 6 (RAE RE Tstg 95~125 c 0. 65-4] ss) 0. 45 %*Pw=10msec, duty=1/15 2.54 2.54 13 & & Me MATE (Ta=25C) 1 (Electrical Characteristics) in B ac Ss MIN TYP | MAX | Hf & F ALIS-L 73 | 28A790, 254830 32) BVcES Vo /4KIe=1mA, RaE=0 BER BIE 2S A791, 2S A831 20 _ ALON! 2SA790, 2S A830 40 _ _ BV cBo Vv I,~=l004A BERR E 2S A791, 2S A831 25 _ _ TLiv9-A2RMABIE BVEBO 6 _ Vv Tr=100#A ee 25 A790,2SA830 I 1 A VcB=24V > Hay - f= | = M 2" TOSATI1, 2S A831 ene Vcp=15V Teav9o Cement I EBO _ _ 1 MA | Vep=4.5V Ene isis h FE 1000 _ _ _ VcE=5V, Ic=100mA * ALOS-Tay ORAS VcE (sat) _ _ 1.5 Vv Ic=200mA, Ip=0.4mA FSF UR (KD a eRe) | dl _ 200 MHz | Vce=5V, le=10mA ILISHABRS Cob _ 3.0 _ pF Vcsp=l10V,1If=0, f= MHz KINLAHE hreOfilckU FROKLDUCHHMLET. PTs A B hFE 1000 LI_E 5000L1_k