BUT11AFG - ON Semiconductor

FULL PAK

High Voltage NPN Power Transistor

For Isolated Package Applications

The BUT11AF was designed for use in line operated switching

power supplies in a wide range of end use applications. This device

combines the latest state of the art bipolar fabrication techniques to

provide excellent switching, high voltage capability and low

saturation voltage.

•1000 Volt VCES Rating

•Low Base Drive Requirements

•Isolated Overmold Package

•Improved System Efficiency

•No Isolating Washers Required

•Reduced System Cost

•High Isolation Voltage Capability (4500 VRMS)

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector–Emitter Sustaining Voltage VCEO(sus) 450 Vdc

Collector–Emitter Breakdown Voltage VCES 1000 Vdc

Emitter–Base Voltage VEBO 9.0 Vdc

RMS Isolation Voltage (For 1 sec, Per Figure 7 VISOL1 4500

TA = 25°C, Rel. Humidity < 30%) Per Figure 8 VISOL2 3500 V

Per Figure 9 VISOL3 2500

Collector Current — Continuous

Collector Current — Pulsed (1) IC

ICM 5.0

10 Adc

Base Current — Continuous

Base Current — Pulsed (1) IB

IBM 2.0

4.0 Adc

Total Power Dissipation @ TC = 25°C*

Derated above 25°CPD40

0.32 Watts

W/°C

Operating and Storage Temperature Range TJ, Tstg – 65 to +150 °C

THERMAL CHARACTERISTICS

Thermal Resistance — Junction to Case* RθJC 3.125 °C/W

Maximum Lead Temperature for soldering purposes

1/8″ from case for 5 sec. TL260 °C

(1) Pulse Test: Pulse Width = 5.0 ms, Duty Cycle ≤ 10%.

*Measurement made with thermocouple contacting the bottom insulated mounting surface of the package (in a location beneath the die),

the device mounted on a heatsink, thermal grease applied, and a mounting torque of 6 to 8 in . lbs.

ON Semiconductor

 Semiconductor Components Industries, LLC, 2001

March, 2001 – Rev. 4 1Publication Order Number:

BUT11AF/D

BUT11AF

POWER TRANSISTOR

5.0 AMPERES

450 VOLTS

40 WATTS

CASE 221D–02

TO–220 TYPE

BUT11AF

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ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS (1)

Collector-Emitter Sustaining Voltage (Figures 1 & 2)

(IC = 100 mAdc, IB = 0, L = 25 µH) VCEO(sus) 450 – – Vdc

Collector Cutoff Current

(VCE = 1000 Vdc, VBE = 0)

(VCE = 1000 Vdc, VBE = 0, TJ = 125°C)

ICES –

––

–1.0

2.0

mAdc

Emitter-Base Leakage

(VEB = 9.0 Vdc, IC = 0) IEBO – – 10 mAdc

ON CHARACTERISTICS (1)

Collector-Emitter Saturation Voltage

(IC = 2.5 Adc, IB = 0.5 Adc) VCE(sat) – – 1.5 Vdc

Base-Emitter Saturation Voltage

(IC = 2.5 Adc, IB = 0.5 Adc) VBE(sat) – – 1.5 Vdc

DC Current Gain

(IC = 5.0 mAdc, VCE = 5.0 Vdc) hFE 10 –

––

DYNAMIC CHARACTERISTICS

Insulation Capacitance (Collector to External Heatsink) Cc-hs – 15 – pF

SWITCHING CHARACTERISTICS

Inductive Load (Figures 3 & 4)

Storage

T=25°C

ts– 1100 1400 ns

Fall Time

I=25Adc I =05Adc

TJ = 25°Ctfi – 80 150

Storage IC = 2.5 Adc, IB1 = 0.5 Adc

T= 100°C

ts– 1200 1500

Fall Time TJ = 100°Ctfi – 140 300

Resistive Load (Figures 5 & 6)

Turn-On Time ton – – 1000 ns

Storage Time IC = 2.5 Adc, IB1 = IB2 = 0.5 Adc ts– – 4000

Fall Time

C,B1 B2

tf– – 800

(1) Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤ 2.0%.

200

250

100

MIN

VCEO(sus)

VCE (V)

Figure 1. Oscilloscope Display for Sustaining Voltage

(mA)

HOR.

OSCILLOSCOPE

VERT.

OSCILLOSCOPE

+50 V

VIN

100-200 Ω

1 Ω

Figure 2. Test Circuit for VCEO(sus)

BUT11AF

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VIN

T.U.T.

VCC

Figure 3. Test Circuit Resistive Load

VCC

VIN

= 250 V

= -6 to +8 V

= 20 µs

= 0.01

90%

10%

90%

10%

IB on

IB off

IC on

ton toff

tft

Figure 4. Switching Times Waveforms with

Resistive Load

Figure 5. Test Circuit Inductive Load

+IB1

-VBE

VCC

VCL

T.U.T.

7Z89211.2

VCL

VCC

VEB

VCL

= 300 V

= 30 V

= 5 V

= 1 µH

= 200 µH

Figure 6. Switching Times Waveforms

with Inductive Load

90%

10%

90%

10%

IB1

IB2

IC on

toff

BUT11AF

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TEST CONDITIONS FOR ISOLATION TESTS*

MOUNTED

FULLY ISOLATED

PACKAGE

LEADS

HEATSINK

0.110″ MIN

Figure 7. Screw or Clip Mounting Position

for Isolation Test Number 1

*Measurement made between leads and heatsink with all leads shorted together.

CLIP

MOUNTED

FULLY ISOLATED

PACKAGE

LEADS

HEATSINK

CLIP 0.107″ MIN

MOUNTED

FULLY ISOLATED

PACKAGE

LEADS

HEATSINK

0.107″ MIN

Figure 8. Clip Mounting Position

for Isolation Test Number 2 Figure 9. Screw Mounting Position

for Isolation Test Number 3

MOUNTING INFORMATION

4-40 SCREW

PLAIN WASHER

HEATSINK

COMPRESSION WASHER

NUT

CLIP

HEATSINK

Laboratory tests on a limited number of samples indicate, when using the screw and compression washer mounting technique, a screw

torque o f 6 t o 8 i n.lbs is sufficient to provide maximum power dissipation capability. The compression washer helps to maintain a constant

pressure on the package over time and during large temperature excursions.

Destructive laboratory tests show that using a hex head 4–40 screw, without washers, and applying a torque in excess of 20 in .lbs will

cause the plastic to crack around the mounting hole, resulting in a loss of isolation capability.

Additional tests on slotted 4–40 screws indicate that the screw slot fails between 15 to 20 in .lbs without adversely affecting the package.

However, in order to positively ensure the package integrity of the fully isolated device, ON Semiconductor does not recommend exceeding

10 in .lbs of mounting torque under any mounting conditions.

Figure 10. Typical Mounting Techniques

for Isolated Package

BUT11AF

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PACKAGE DIMENSIONS

CASE 221D–02

ISSUE D

TO–220 FULLPAK

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

DIM

MIN MAX MIN MAX

MILLIMETERS

0.621 0.629 15.78 15.97

INCHES

B0.394 0.402 10.01 10.21

C0.181 0.189 4.60 4.80

D0.026 0.034 0.67 0.86

F0.121 0.129 3.08 3.27

G0.100 BSC 2.54 BSC

H0.123 0.129 3.13 3.27

J0.018 0.025 0.46 0.64

K0.500 0.562 12.70 14.27

L0.045 0.060 1.14 1.52

N0.200 BSC 5.08 BSC

Q0.126 0.134 3.21 3.40

R0.107 0.111 2.72 2.81

S0.096 0.104 2.44 2.64

U0.259 0.267 6.58 6.78

–B–

–Y–

3 PL

123

0.25 (0.010) Y

SEATING

PLANE

–T–

BUT11AF

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Notes

BUT11AF

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Notes

BUT11AF

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including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or

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For additional information, please contact your local

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BUT11AF/D

SWITCHMODE a a registered trademark of Semiconductor Components INdustries, LLC (SCILLC)

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