GaAs INFRARED EMITTING DIODE OPTOELECTRONICS QEE113 The QEE113 is a 940 nm GaAs LED encapsulated in a -087 (2.22) ; DIA o wide angle, orange, plastic sidelooker shell package. | 0501.27) .200 (5.08) f = Tight production E, distribution with min/max limits. | - CATHODE Steel lead frames for improved reliability in solder 062 DIA m1 mounting. 500 (12.7) MIN @ Good optical-to-mechanical alignment. ANODE a Mechanically and wavelength matched to QSE11X a series phototransistor. m Plastic package color allows easy recognition from | LL aN (0-81) SQ phototransistor. High irradiance level. .100 (2.54) | ; Oo its .020(0.51) 4 + A 00 (2.54) | .175 (4.44) LE $T2128 NOTES: 1. DIMENSIONS ARE IN INCHES (mm). 2. TOLERANCE IS +.010 (.25) UNLESS OTHERWISE SPECIFIED. OPTOELECTRONICS GaAs INFRARED EMITTING DIODE : ae Storage Temperature ee 40C to + 100C Operating Temperature 10.0.0. n nee e ene eter tebe teee eer evneeas 40C to + 100C Soldering: Lead Temperature (Iron) 2... eee nen nee ene ene enbbevesinnes 240C for 5 sec, 7549 Lead Temperature (FlOW) 2.00.0... ccc nen n eee ben eee etree cbt be eees 260C for 10 sec. 29" Continuous Forward Current 2.202. ee een REDDER Ea endo ete Deke en bbe bade e Es 50 mA Reverse Voltage 0... nnn nen n detec need eee e etree tenet eneee 5.0 Volts Power DisSSIPAtION 6 EE EEE nn een ee Ene dren een ede e teen enes 100 mw PARAMETER SYMBOL . . . TEST CONDITIONS Forward Voltage Vv |; = 20mA Reverse Leakage Current pA Va = 5.0V Peak Emission Wavelength nm lp = 20mA Emission Angle at 2 Power Degrees Radiant Incidence mW/10 Cone le = 20 mAs? . Derate power dissipation linearly 1.83 mW/C above 25C. . RMA flux is recommended. . Methanol or Isopropyl alcohols are recommended as cleaning agents. . Soldering iron tip 46 (1.6 mm) minimum from housing. . As long as ieads are not under any stress or spring tension. Measurement is taken at the end of a single 100 usec pulse. E, is a measurement of the average apertured radiant energy incident upon a sensing area 0.444 (11.3 mm) in diameter, perpendicular to and centered on the mechanical axis of the lens, and 2.54 (64.4 mm) from the measurement surface. E, is not necessarily uniform within the measurement area. NO OA WY AE