SD101A / 101B / 101C
Document Number 85629
Rev. 1.4, 03-Apr-06
Vishay Semiconductors
www.vishay.com
1
94 9367
Small Signal Schottky Diodes
Features
• Integrated protection ring against static
discharge
• Low capacitance
• Low leakage current
• Low forward voltage drop
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Applications
• HF-Detector
• Protection circuit
• Diode for low currents with a low supply voltage
• Small battery charger
• Power supplies
• DC / DC converter for notebooks
Mechanical Data
Case: DO35 Glass case
Weight: approx. 125 mg
Cathode Band Color: black
Packaging Codes/Options:
TR / 10 k per 13" reel (52 mm tape), 50 k/box
TAP / 10 k per Ammopack (52 mm tape), 50 k/box
Parts Table
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
1) Valid provided that electrodes are kept at ambient temperature.
Part Type differentiation Ordering code Remarks
SD101A VR = 60 V, VF at IF = 1 mA max. 410 mV SD101A-TAP or SD101A-TR Ammopack / Tape and Reel
SD101B VR = 50 V, VF at IF = 1 mA max. 400 mV SD101B-TAP or SD101B-TR Ammopack / Tape and Reel
SD101C VR = 40 V, VF at IF = 1 mA max. 390 mV SD101B-TAP or SD101B-TR Ammopack / Tape and Reel
Parameter Test condition Part Symbol Value Unit
Reverse voltage SD101A VR60 V
SD101B VR50 V
SD101C VR40 V
Forward continuous current IF30 mA
Peak forward surge current tp = 10 µs IFSM 2A
Repetitive peak forward current IFRM 150 mA
Power dissipation Ptot 3101) mW
e2
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Document Number 85629
Rev. 1.4, 03-Apr-06
SD101A / 101B / 101C
Vishay Semiconductors
Thermal Characteristics
Tamb = 25 °C, unless otherwise specified
1) Valid provided that electrodes are kept at ambient temperature.
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Typical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter Test condition Symbol Value Unit
Junction temperature Tj125 °C
Storage temperature range Tstg - 65 to + 150 °C
Junction to ambient air RthJA 3201) K/W
Parameter Test condition Part Symbol Min Typ. Max Unit
Reverse Breakdown Voltage IR = 10 µA SD101A V(BR)R 60 V
SD101B V(BR)R 50 V
SD101C V(BR)R 40 V
Leakage current VR = 50 V SD101A IR200 nA
VR = 40 V SD101B IR200 nA
VR = 30 V SD101C IR200 nA
Forward voltage drop IF = 1 mA SD101A VF410 mV
SD101B VF400 mV
SD101C VF390 mV
IF = 15 mA SD101A VF1000 mV
SD101B VF950 mV
SD101C VF900 mV
Diode capacitance VR = 0 V, f = 1 MHz SD101A CD2.0 pF
SD101B CD2.1 pF
VR = 0 V, f = 1 MHz SD101C CD2.2 pF
Figure 1. Reverse Current vs. Reverse Voltage
IR = Reverse Current (µA)
0.01
0.1
1
10
100
0 101520253035404550
VR - Reverse Voltage (V)
16204
T
j
= 125 °C
T
j
= 100 °C
T
j
= 75 °C
T
j
= 50 °C
T
j
= 25 °C
5
Figure 2. Diode Capacitance vs. Reverse Voltage
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
0 101520253035404550
VR - Reverse Voltage (V)
16205
CD - Diode Capacitance (pF)
T
j
= 25 °C
5
SD101A / 101B / 101C
Document Number 85629
Rev. 1.4, 03-Apr-06
Vishay Semiconductors
www.vishay.com
3
Package Dimensions in mm (Inches)
Figure 3. Forward Current vs. Forward Voltage
0.01
0.10
1.00
10.00
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.80.9 1.0
IF - Forward Current (mA)
VF - Forward Voltage (V)
16206
94 9366
technical drawings
according to DIN
specifications
Standard Glass Case
54 A 2 DIN 41880
JEDEC DO 35
0.55 max. (0.022)
2 max. (0.079)
26 min. (1.024) 3.9 max. (0.154) 26 min. (1.024)
Cathode Identification
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Document Number 85629
Rev. 1.4, 03-Apr-06
SD101A / 101B / 101C
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Legal Disclaimer Notice
Vishay
Document Number: 91000 www.vishay.com
Revision: 08-Apr-05 1
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
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