Datasheet V2019.1.0 G3S06520P 650V/ 20A Silicon Carbide Power Schottky Barrier Diode Features * Rated to 650V at 20 Amps * Zero reverse recovery current * Zero forward recovery voltage * Temperature independent switching behaviour * High temperature operation * High frequency operation Key Characteristics VRRM 650 V IF, Tc155 20 A QC 56 nC Benefits * Unipolar rectifier * Substantially reduced switching losses * No thermal run-away with parallel devices * Reduced heat sink requirements Applications * SMPS, e.g., CCM PFC; * Motor drives, Solar application, UPS, Wind turbine, Rail traction, EV/HEV Part No. Package Type Marking G3S06520P TO-247 G3S06520P G3S06520P (c)2019 Global Power Technology Company Ltd - ALL RIGHTS RESERVED G3S06520P 650V/ 20A Silicon Carbide Power Schottky Barrier Diode Maximum Ratings Parameter Repetitive Peak Reverse Voltage Surge Peak Reverse Voltage DC Blocking Voltage Continuous Forward Current Repetitive Peak Forward Surge Current Non-repetitive Peak Forward Surge Current Symbol Value Unit VRRM 650 VRSM 650 VDC 650 60 31 20 100 A 175 A 227 98 -55 to 175 W W IF IFRM IFSM Power Dissipation PTOT Operating Junction Tj Storage Temperature Test Condition TC=25 TC=125 TC=155 TC=25, tp=10ms Half Sine WaveD=0.3 TC=25, tp=10ms Half Sine Wave TC=25 TC=110 A -55 to 175 Tstg 1 8.8 M3 Screw 6-32 Screw Mounting Torque V Nm lbf-in Thermal Characteristics Parameter Symbol Thermal resistance from junction to case Rth JC G3S06520P Test Condition Value Typ. 0.66 Unit /W (c)2019 Global Power Technology Company Ltd - ALL RIGHTS RESERVED G3S06520P 650V/ 20A Silicon Carbide Power Schottky Barrier Diode Electrical Characteristics Parameter Forward Voltage Reverse Current Symbol VF IR Test Conditions Numerical Typ. Max. Unit IF=20A, Tj=25 1.52 1.7 IF=20A, Tj=175 1.8 2.5 VR=650V, Tj=25 10 20 50 100 A 56 - nC 1170 1300 VR=200V, Tj=25, f=1MHZ 110 120 VR=400V, Tj=25, f=1MHZ 100 108 VR=650V, Tj=175 V VR=400V, Tj=150 Total Capacitive Charge QC VR Qc = 0 C (V )dV VR=0V, Tj=25, f=1MHZ Total Capacitance C pF Performance Graphs 1) Forward IV characteristics as a function of Tj : G3S06520P 2) Reverse IV characteristics as a function of Tj : (c)2019 Global Power Technology Company Ltd - ALL RIGHTS RESERVED G3S06520P 650V/ 20A Silicon Carbide Power Schottky Barrier Diode 3) Current Derating 4) Capacitance vs. reverse voltage : Package TO-247 G3S06520P (c)2019 Global Power Technology Company Ltd - ALL RIGHTS RESERVED G3S06520P 650V/ 20A Silicon Carbide Power Schottky Barrier Diode Note: The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2011/65/EC(RoHS2). RoHS Certification and other certifications can be obtained from GPT sales representatives or GPT website: http://globalpowertech.cn/English/index.asp More product datasheets and company information can be found in: http://globalpowertech.cn/English/index.asp G3S06520P (c)2019 Global Power Technology Company Ltd - ALL RIGHTS RESERVED