1
Subject to change without notice.
www.cree.com/rf
CGHV40030
30 W, DC - 6 GHz, 50V, GaN HEMT
Cree’s CGHV40030 is an unmatched, gallium nitride (GaN) high electron mobility transistor
(HEMT) designed specically for high efciency, high gain and wide bandwidth capabilities.
The device can be deployed for L, S and C-Band amplier applications. The datasheet
specications are based on a 0.96 - 1.4 GHz amplier. The CGHV40030 operates on a 50
volt rail circuit while housed in a 2-lead ange or pill package.
Package Type: 440166 and 440196
PN: CGHV40030
Rev 1.1 - December 2016
Features
• Up to 6 GHz Operation
• 30 W Typical Output Power
• 16 dB Gain
• Application circuit for 0.96 - 1.4 GHz
• 70% Efciency at PSAT
• 50 V Operation
Typical Performance 0.96 - 1.4 GHz (TC = 25˚C) , 50 V
Parameter 0.96 GHz 1.1 GHz 1.25 GHz 1.4 GHz Units
Gain @ PSAT 15.6 15.8 16.6 15.8 dB
Saturated Output Power 29 30 36 31 W
Drain Efciency @ PSAT 62 74 64 67 %
Note:
Measured CW in the CGHV40030-AMP application circuit.
2CGHV40030 Rev 1.1
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Copyright © 2014-2016 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature
Parameter Symbol Rating Units Notes
Drain-Source Voltage VDSS 125 Volts 25˚C
Gate-to-Source Voltage VGS -10, +2 Volts 25˚C
Storage Temperature TSTG -65, +150 ˚C
Operating Junction Temperature TJ225 ˚C
Maximum Forward Gate Current IGMAX 5.2 mA 25˚C
Maximum Drain Current1IDMAX 4.2 A25˚C
Soldering Temperature2TS245 ˚C
Case Operating Temperature3TC-40, +85 ˚C
Thermal Resistance, Junction to Case4RθJC 5.9 ˚C/W 85˚C
Note:
1 Current limit for long term, reliable operation
2 Refer to the Application Note on soldering at www.cree.com/rf/document-library
3 PDISS = 23.4 W
4 CW
Electrical Characteristics (TC = 25˚C)
Characteristics Symbol Min. Typ. Max. Units Conditions
DC Characteristics1
Gate Threshold Voltage VGS(th) -3.8 -3.0 -2.3 VDC VDS = 10 V, ID = 5.2 mA
Gate Quiescent Voltage VGS(Q) –-2.6 – VDC VDS = 50 V, ID = 150 mA
Saturated Drain Current2IDS 3.9 5.2 – A VDS = 6.0 V, VGS = 2.0 V
Drain-Source Breakdown Voltage V(BR)DSS 125 – – VDC VGS = -8 V, ID = 5.2 mA
RF Characteristics3 (TC = 25˚C, F0 = 1.2 GHz unless otherwise noted)
Power Gain4GP15 16 - dB VDD = 50 V, IDQ = 150 mA, POUT = PSAT
Output Power4POUT 30 35 – W VDD = 50 V, IDQ = 150 mA, POUT = PSAT
Drain Efciency4η 62 65 - % VDD = 50 V, IDQ = 150 mA, POUT = PSAT
Output Mismatch Stress4VSWR - - 10 : 1 YNo damage at all phase angles,
VDD = 50 V, IDQ = 150 mA, POUT = 30 W CW
Dynamic Characteristics
Input Capacitance5CGS –7.4 – pF VDS = 50 V, Vgs = -8 V, f = 1 MHz
Output Capacitance5CDS –2– pF VDS = 50 V, Vgs = -8 V, f = 1 MHz
Feedback Capacitance CGD –0.15 – pF VDS = 50 V, Vgs = -8 V, f = 1 MHz
Notes:
1 Measured on wafer prior to packaging
2 Scaled from PCM data
3 Measured in CGHV40030-AMP
4 PSAT is dened as IG = 0.52 mA
5 Includes package
3CGHV40030 Rev 1.1
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Copyright © 2014-2016 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
Typical Performance
Figure 1. - Typical Small Signal Response of CGHV40030-AMP Application Circuit
VDD = 50 V, IDQ = 150 mA
Figure 2. - Typical Large Signal Response of CGHV40030-AMP Application Circuit
VDD = 50 V, IDQ = 150 mA, PIN = 29 dBm, TCASE = 25°C, CW
-5
0
5
10
15
20
25
30
Gain, Return Loss(dB)
-30
-25
-20
-15
-10
0.8 0.9 1 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8
Gain, Return Loss(dB)
Frequency (GHz)
S11
S21
S22
50
55
60
65
70
75
80
45.0
45.5
46.0
46.5
47.0
47.5
48.0
Drain Efficiency (%)
Output Power (dBm)
30
35
40
45
43.0
43.5
44.0
44.5
0.9 1.0 1.1 1.2 1.3 1.4 1.5
Drain Efficiency (%)
Output Power (dBm)
Frequency (GHz)
Output Power
Drain Efficiency
Output Power
Drain Efciency
4CGHV40030 Rev 1.1
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Copyright © 2014-2016 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
CGHV40030-AMP Application Circuit
Bill of Materials
Designator Description Qty
R1 RES,1/16W,0603,1%,187 OHMS 1
R2 RES, 2.2 OHMS, +/- 1%, 1/16W,0603 1
R3 RES,1/16W,0603,1%,15.4 OHMS 1
L1 IND, 5.6nH, 0603 1
C3, C4 CAP, 2.7,+/-0.1pF, 0603, ATC 2
C11, C12 CAP, 1.2pF,+/-0.1pF, 0603, ATC 2
C5, C6 CAP, 0.8pF,+/-0.1pF, 0603, ATC 2
C2, C7, C8 CAP 1.8pF,+/-0.05pF 0603, ATC 3
C9, C10 CAP, 3.9pF,+/-0.1pF 0603, ATC 2
C1, C13 CAP, 24pF,+/-5% 0603, ATC 2
C14 CAP 10UF 16V TANTALUM 1
C15, C20 CAP, 33000pF, 0805, ATC 2
C16,C21 CAP, 470PF, 5%, 100V, 0603, 2
C17 CAP, 68pF,+/-0.1pF 0603, ATC 1
C22 CAP, 56PF +/- 5%, 0603 , ATC600S 1
C18 CAP, 33UF, 20%, G CASE 1
C19 CAP, 1.0UF, 100V, 10%, X7R, 1210 1
J1,J2 CONN, SMA, PANEL MOUNT JACK, FLANGE,
4-HOLE, BLUNT POST 2
J3 HEADER RT>PLZ .1CEN LK 5POS 1
BASEPLATE, CGH35015, 2.60 X 1.7 1
CGHV40030F/P PCB, RO4350, 0.020” THK 1
2-56 SOC HD SCREW 1/4 SS 4
#2 SPLIT LOCKWASHER SS 4
CGHV40030-AMP Application Circuit
5CGHV40030 Rev 1.1
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Copyright © 2014-2016 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
Source and Load Impedances
Frequency (MHz) Z Source Z Load
500 5.5 + j0.9 43 + j20.8
1000 2.6 - j1.3 25.5 + j29.1
2000 3.8 - j0.9 11.5 + j17.3
3000 2.7 - j7.0 6.7 + j7.8
4000 2.8 - j13.4 6.5 + j1.7
Note1: VDD = 50 V, IDQ = 150 mA
Note2: Impedances are extracted from source and load pull data derived from the transistor.
Electrostatic Discharge (ESD) Classications
Parameter Symbol Class Test Methodology
Human Body Model HBM 1A (> 250 V) JEDEC JESD22 A114-D
Charge Device Model CDM II (200 < 500 V) JEDEC JESD22 C101-C
D
Z Source Z Load
G
S
6CGHV40030 Rev 1.1
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Copyright © 2014-2016 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
Typical Package S-Parameters for CGHV40030
(Small Signal, VDS = 50 V, IDQ = 150 mA, angle in degrees)
Frequency Mag S11 Ang S11 Mag S21 Ang S21 Mag S12 Ang S12 Mag S22 Ang S22
500 MHz 0.92 -135.45 21.23 101.31 0.01 16.50 0.32 -74.10
600 MHz 0.92 -143.51 18.06 95.44 0.01 11.72 0.32 -79.66
700 MHz 0.91 -149.71 15.66 90.50 0.01 7.89 0.31 -84.44
800 MHz 0.91 -154.67 13.78 86.16 0.01 4.69 0.32 -88.69
900 MHz 0.91 -158.75 12.27 82.26 0.01 1.97 0.33 -92.58
1.0 GHz 0.91 -162.21 11.04 78.67 0.01 -0.41 0.34 -96.19
1.1 GHz 0.91 -165.20 10.02 75.32 0.01 -2.50 0.35 -99.57
1.2 GHz 0.91 -167.83 9.15 72.16 0.01 -4.34 0.36 -102.79
1.3 GHz 0.91 -170.19 8.41 69.14 0.01 -5.98 0.37 -105.86
1.4 GHz 0.92 -172.34 7.76 66.24 0.01 -7.43 0.39 -108.80
1.5 GHz 0.92 -174.30 7.20 63.45 0.01 -8.69 0.40 -111.64
1.6 GHz 0.92 -176.13 6.70 60.74 0.01 -9.77 0.42 -114.39
1.7 GHz 0.92 -177.83 6.26 58.11 0.01 -10.67 0.43 -117.06
1.8 GHz 0.92 -179.44 5.86 55.54 0.01 -11.39 0.45 -119.65
1.9 GHz 0.92 179.04 5.50 53.03 0.01 -11.90 0.46 -122.18
2.0 GHz 0.92 177.58 5.18 50.58 0.01 -12.20 0.48 -124.64
2.1 GHz 0.92 176.19 4.89 48.17 0.01 -12.26 0.49 -127.05
2.2 GHz 0.92 174.84 4.62 45.81 0.01 -12.07 0.51 -129.41
2.3 GHz 0.93 173.54 4.37 43.50 0.01 -11.60 0.52 -131.72
2.4 GHz 0.93 172.28 4.14 41.22 0.01 -10.82 0.53 -133.98
2.5 GHz 0.93 171.06 3.93 38.98 0.01 -9.70 0.55 -136.21
2.6 GHz 0.93 169.86 3.73 36.78 0.01 -8.20 0.56 -138.39
2.7 GHz 0.93 168.70 3.55 34.62 0.01 -6.30 0.57 -140.53
2.8 GHz 0.93 167.55 3.38 32.49 0.01 -3.97 0.59 -142.63
2.9 GHz 0.93 166.43 3.23 30.39 0.01 -1.18 0.60 -144.70
3.0 GHz 0.94 165.33 3.08 28.33 0.01 2.04 0.61 -146.73
3.2 GHz 0.94 163.18 2.81 24.29 0.01 9.69 0.64 -150.70
3.4 GHz 0.94 161.08 2.57 20.36 0.01 18.36 0.66 -154.54
3.6 GHz 0.94 159.05 2.36 16.55 0.01 27.05 0.68 -158.26
3.8 GHz 0.95 157.05 2.17 12.85 0.01 34.79 0.70 -161.87
4.0 GHz 0.95 155.10 2.00 9.25 0.01 41.04 0.72 -165.37
4.2 GHz 0.95 153.19 1.85 5.75 0.01 45.73 0.73 -168.77
4.4 GHz 0.95 151.31 1.72 2.35 0.01 49.02 0.75 -172.07
4.6 GHz 0.96 149.46 1.59 -0.96 0.01 51.19 0.76 -175.28
4.8 GHz 0.96 147.65 1.48 -4.18 0.01 52.48 0.78 -178.39
5.0 GHz 0.96 145.86 1.37 -7.31 0.01 53.11 0.79 178.58
5.2 GHz 0.96 144.11 1.28 -10.36 0.01 53.24 0.80 175.63
5.4 GHz 0.96 142.38 1.19 -13.33 0.01 52.98 0.82 172.76
5.6 GHz 0.96 140.68 1.11 -16.22 0.02 52.43 0.83 169.97
5.8 GHz 0.97 139.00 1.04 -19.03 0.02 51.65 0.84 167.25
6.0 GHz 0.97 137.35 0.98 -21.76 0.02 50.70 0.85 164.60
To download the s-parameters in s2p format, go to the CGHV40030 Product Page and click on the documentation tab.
7CGHV40030 Rev 1.1
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Copyright © 2014-2016 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
CGHV40030-AMP Application Circuit Schematic
CGHV40030-AMP Application Circuit Outline
8CGHV40030 Rev 1.1
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Copyright © 2014-2016 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
Product Dimensions CGHV40030F (Package Type - 440166 )
Product Dimensions CGHV40030P (Package Type - 440196)
9CGHV40030 Rev 1.1
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Copyright © 2014-2016 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
Part Number System
Parameter Value Units
Upper Frequency16 GHz
Power Output 30 W
Package Flanged/Pill -
Table 1.
Note1: Alpha characters used in frequency code
indicate a value greater than 9.9 GHz. See Table
2 for value.
Character Code Code Value
A 0
B 1
C2
D 3
E 4
F5
G6
H 7
J 8
K 9
Examples: 1A = 10.0 GHz
2H = 27.0 GHz
Table 2.
Package
Power Output (W)
Upper Frequency (GHz)
Cree GaN High Voltage
CGHV40030F/P
10 CGHV40030 Rev 1.1
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Copyright © 2014-2016 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
Product Ordering Information
Order Number Description Unit of Measure Image
CGHV40030F GaN HEMT Each
CGHV40030P GaN HEMT Each
CGHV40030-TB Test board without GaN HEMT Each
CGHV40030F-AMP Test board with GaN HEMT installed Each
11 CGHV40030 Rev 1.1
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Copyright © 2014-2016 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
Disclaimer
Specications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate
and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may
result from its use. No license is granted by implication or otherwise under any patent or patent rights of Cree. Cree makes no warranty,
representation or guarantee regarding the suitability of its products for any particular purpose. “Typical” parameters are the average
values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different
applications and actual performance can vary over time. All operating parameters should be validated by customer’s technical experts
for each application. Cree products are not designed, intended or authorized for use as components in applications intended for surgical
implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or
death or in applications for planning, construction, maintenance or direct operation of a nuclear facility.
For more information, please contact:
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
www.cree.com/rf
Sarah Miller
Marketing
Cree, RF Components
1.919.407.5302
Ryan Baker
Marketing & Sales
Cree, RF Components
1.919.407.7816
Tom Dekker
Sales Director
Cree, RF Components
1.919.313.5639