e es e N n channel field effect transistors plastic case . . Ae . THOMSON-CSF transistors @ effet de champ canal n boitier plastique Type | Application [Vipr)cssi'css Y21s VaSoft Estee|C12e]DS0n F /f Case max | min) max] min == max |max | max | max [max (MHz)* (mA) (ms) wv) (pF) | (pF) |) [(dB) (KHz AR/RF general dle purpose 2N 3819 | Yaroe gnral 2012 #65 ~s]sa fa BH/HF G0 to72 BC 264 AR eee 12 | 25 ~05 8 14 *) 1,2" BF 245 2313 465]/-05 8 | 4 *| 14,1* Usage gnral ' 1 al ace BF 247 SHE 300 | 8 ~06 145/15 *| 35 2N 5245 6145 75]/-1 -6]4511 2N 5246 UHF/VHF 713 +6 J-os 4] 45]1 . 2N 5247 amplification 24 4,5 8 -15- 8 4571 BF 256 ~05 7,5) 45] 1,2 ESM 4091] 6. chi ~5 10 [28 {5 sD ESM 4092} wite a 2 7 }28 [5 CB-76 ESM 4093) OMMUlation ~1 5 |28 [5 ESM 4302 sn oe 5/1 ~a4ale |3 ESM 4303 10 | 2 ~6]6 13 Usage gnral ESM 4304 | TE 15 44 _1w]e6 |3 _ Available in several Ipgg groups (1): Disponible en plusieurs groupes de Ings fet dual transistors, n channel transistors double a effet de champ-canal n Type | Application [V(BR)Gss|!css Y21s_ | Vasott |Cttss C1288 Matching Case max Appariement min {nA} in-max |{min-max| max | max |*215]'DSS Ves1-Ves2 |AVGs/4T (Vv) (pA)* (mS) (Vv) (pF) [| (pF) | (%) | (%) (mV) (Vv/C) ESM 25 AR/RF general 1-5 0,7-4,5 6 2 20 20 25 80 ESM 25A purpose 15 0,7-4,5 6 2 20 20 25 50 2N 5198 Usage gnral 1-0,7 |0,7-4 6 2 5 5 10 20 fe 2N 5199 BF/HF 10,7 |0,7-4 6 2 5 5 10 40 He TO 71 Ss G ick G $ 7