5–1
FEATURES
• Internal RBE for High Stability
• Current Transfer Ratio is Tested
at 2.0 mA and 0.7 mA Input
IL/ILD/ILQ66 Series:
- 1, 100% min. at
I
F
=2
mA, V
CE
=10 V
- 2, 300% min. at
I
F
=2
mA, V
CE
=10 V
- 3, 400% min. at
I
F
=0.7
mA, V
CE
=10 V
- 4, 500% min. at
I
F
=2
mA, V
CE
=5 V
• Four Available CTR Categories per Package
Type
• BV
CEO
>60 V
• Standard DIP Packages
• Underwriters Lab File #E52744
• VDE 0884 Available with Option 1
DESCRIPTION
IL66, ILD66, and ILQ66 are optically coupled isola-
tors employing Gallium Arsenide infrared emitters
and silicon photodarlington detectors. Switching
can be accomplished while maintaining a high
degree of isolation between driving and load cir-
cuits, with no crosstalk between channels.
Maximum Ratings
Emitter
(Each Channel)
Peak Reverse Voltage........................................ 6 V
Continuous Forward Current.........................60 mA
Power Dissipation at 25
°
C......................... 100 mW
Derate Linearly from 25
°
C................... 1.33 mW/
°
C
Detector
(Each Channel)
Power Dissipation at 25
°
C Ambient........... 150 mW
Derate Linearly from 25
°
C..................... 2.0 mW/
°
C
Package
Isolation Test Voltage
(t=1 sec.)........................................5300 VAC
RMS
Total Package Power Dissipation at 25
°
C
IL66.......................................................... 250 mW
ILD66....................................................... 400 mW
ILQ66....................................................... 500 mW
Derate Linearly from 25
°
C
IL66...................................................... 3.3 mW/
°
C
ILD66................................................. 5.33 mW/
°
C
ILQ66................................................. 6.67 mW/
°
C
Creepage.................................................7 min mm
Clearance................................................7 min mm
Comparative Tracking Index..............................175
Isolation Resistance
V
IO
=500 V, T
A
=25
°
C................................
≥
10
12
Ω
V
IO
=500 V, T
A
=100
°
C..............................
≥
10
11
Ω
Storage Temperature................... –55
°
C to +125
°
C
Operating Temperature................ –55
°
C to +100
°
C
Lead Soldering Time at 260
°
C ....................10 sec.
V
DE
Dimensions in inches (mm)
.010 (.25)
.014 (.35)
.110 (2.79)
.150 (3.81)
.130 (3.30)
.150 (3.81)
.020 (.051) min.
.300 (7.62)
Typ.
.031 (0.80)
.035 (0.90)
.039
(1.00)
min.
.018 (0.45)
.022 (0.55)
.335 (8.50)
.343 (8.70)
6
5
4
12
3
18°
Typ.
.300 (7.62)
.347 (8.82)
4°
typ.
.255 (6.48)
.268 (6.81)
34
65
.379 (9.63)
.390 (9.91)
.030 (.76)
.045 (1.14)
4°
Typ.
.100 (2.54) Typ.
.100 (2.54) Typ.
10°
Typ.
3°–9°
.305 Typ.
(7.75) Typ.
.018 (.46)
.022 (.56) .008 (.20)
.012 (.30)
.115 (2.92)
.135 (3.43)
1
2
87
.130 (3.30)
.150 (3.81)
.030 (.76 )
.040 (1.02)
1
2
3
6
5
4
Anode
Cathode
NC
Base
Collector
Emitter
Anode
Cathode
Cathode
Anode
Emitter
Collector
Collector
Emitter
1
2
3
4
8
7
6
5
Anode
Cathode
Cathode
Anode
Emitter
Collecto
r
Collecto
r
Emitter
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
Emitter
Collecto
r
Collecto
r
Emitter
Anode
Cathode
Cathode
Anode
.248 (6.30)
.256 (6.50)
.
255 (6.48)
.
268 (6.81)
.779 (19.77 )
.790 (20.07)
Pin
One
I.D.
.130 (3.30)
.150 (3.81)
.030 (.76 )
.040 (1.02)
.030 (.76)
.045 (1.14)
4°
Typ.
.100 (2.54) Typ.
.018 (.46)
.022 (.56)
10°
Typ.
3°–9°
.305 Typ.
(7.75) Typ.
.008 (.20)
.012 (.30)
.115 (2.92
)
.135 (3.43
)
Pin One I.D.
Pin One I.D.
SINGLE CHANNEL
IL66 SERIES
DUAL CHANNEL
ILD66 SERIES
QUAD CHANNEL
ILQ 66 SERIES
PHOTODARLINGTON OPTOCOUPLER
5–2
IL/ILD/ILQ66
Electrical Characteristics
(T
A
=25C)
Symbol Min. Typ. Max.. Unit Condition
GaAs Emitter
Forward Voltage 1.25 1.5 V I
F
=20 mA
Reverse Current 0.1 10
µ
AV
R
=6.0 V
Capacitance 25 pF V
R
=0 V
Photodarlington
Breakdown Voltage
Collector-Emitter
Collector-Base (IL66) BV
CEO
BV
CBO
60
60 V
VI
C
=1 mA, I
F
=0
I
C
=10
µ
A
Leakage Current,
Collector-Emitter I
CEO
1.0 100 nA V
CE
=50 V, I
F
=0
Capacitance,
Collector-Emitter 3.4 pF V
CE
=10 V
Coupled Characteristics
Current Transfer Ratio
IL/ILD/ILQ66-1
IL/ILD/ILQ66-2
IL/ILD/ILQ66-3
IL/ILD/ILQ66-4
CTR 100
300
400
500
400
500
500
750
%
%
%
%
I
F
=2 mA,V
CE
=10 V
I
F
=2 mA,V
CE
=10 V
I
F
=0.7 mA, V
CE
=10 V
I
F
=2 mA, V
CE
=5 V
Saturation Voltage,
Collector-Emitter V
CEsat
0.9 1.0 V I
C
=10 mA, I
F
=10 mA
Rise Time -1, -2, -4 t
R
200
µ
sV
CC
=10 V
Fall Time -1, -2, -4 t
F
200
µ
sI
F
=2 mA, R
C
=100
Ω
Rise Time -3 t
R
200
µ
sI
F
=0.7 mA
Fall Time -3 t
F
200
µ
sV
CC
=10 V, R
L
=100
Ω
Figure 1. Forward voltage versus forward current
Figure 2. Normalized non-saturated and saturated
CTRce versus LED curren
100101.1
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
IF - Forward Current - mA
VF - Forward Voltage - V
Ta = -55°
C
Ta = 25°
C
Ta = 100°
C
100
101.1
0.0
0.5
1.0
1.5
2.0
Vce = 1
V
Vce = 5 V
IF - LED Current - mA
NCTRce - Normalized CTRce
Normalized to:
Ta = 25°
C
Vce = 5
V
IF = 2 m
A
Figure 3. Normalized non-saturated and saturated
CTRce versus LED current
Figure 4. Non-saturated and saturated collector
emitter current versus LED current
0.0
0.2
0.4
0.6
0.8
1.0
1.2
.1 1 10 100 1000
Vce = 5 V
Vce = 1 V
IF - LED Current - mA
NCTRce - Normalized CTRce
Ta = 25°C
Vce = 5 V
IF = 10 m
a
Normalized to:
.1 1 10 100
.001
.01
.1
1
10
100
1000
10000 Vce = 5
V
Vce = 1
V
IF - LED Current - mA
Ice - Collector-emitter
current - mA
5–3
IL/ILD/ILQ66
Figure 9. Low/high propagation delay versus collector
load resistance and LED current
Figure 10. Switching waveform
Figure 11. Switching schematic
0 5 10 15 20
0
25
50
75
100
125
150
220Ω
2KΩ
10KΩ
IF - LED Current - mA
tpLH - Low/High Propagation
Delay - µs
Ta = 25°C
Vcc = 5 V
Vth = 1.5 V
IF
tR
V
O
tD
tStF
tPHL
tPLH
VTH=1.5 V
V
RL
VCC=10
F=10 KHz,
DF=50%
IF
Figure 5. Collector-base photocurrent versus LED
current
Figure 6. Collector-emitter current versus LED current
Figure 7. Non-saturated and saturated HFE versus
LED current
Figure 8. High/low propagation delay versus
collector load resistance and LED current
.1 1 10 100
Ta = 25°C
IF - LED Current - mA
Icb - Photocurrent- µa
.1
1
10
100
1000
.1 1 10 100 1000
.001
.01
.1
1
10
100
1000
10000 Vce = 5 V
Vce = 1 V
Ib - Base Current - µs
Ice - Collector-emitter
current - mA
Ta = 25°
C
.1 1 10 100 1000
0
5000
10000
15000
20000
25000
Vce = 5 V
Vce = 1 V
Ib - Base Current - µA
HFE - Forward Gain
Ta = 25°
C
0 5 10 15 20
0
10
20
30
40
50
220Ω
10KΩ
Figure 8
IF - LED Current - mA
tpHL - High/Low Propagation
Delay - µs
Ta = 25°C
Vcc = 5 V
Vth = 1.5 V