WBFBP-06C
(2×2×0.5)
unit: mm
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
WBFBP-06C Plastic-Encapsulate Diode
FMMBD4448HAQW
SURFACE MOUNT SWITCHING DIODE ARRAYS
DESCRIPTION
Silicon epitaxial planar
Switching Diode
FEATURES
z Ultra-Small Surface Mount Package
z Fast Switching Speed
z High Conductance
APPLICATION
For General Purpose Switching Applications, rectifiers
For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM,
DVD-ROM, Note book PC, etc.)
Maximum Ratings and Electrical Characteristics, Single Diode @TA=25
Parameter Symbol Limits Unit
Non-Repetitive Peak re verse voltage VRM 100 V
Peak Repetitive peak reverse voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
80 V
RMS Reverse Vo ltage VR
(
RMS
)
57 V
Forward Continuous Current IFM 500 mA
Average Rectified Output Current IO 250 mA
Non-Repetitive Peak forward surge current @=1.0µs
@=1.0s IFSM
4.0
2.0 A
Power Dissipation Pd 150 mW
Thermal Resistance Junction to Ambient RθJA 625 ℃/W
Junction temperature TJ 150 ℃
Storage temperature range TSTG -65 to +150 ℃
Electrical Ratings @TA=25℃
Parameter Symbol Min. Typ. Max. Unit Conditions
Reverse Breakd own Voltage VR 80 V
IR=100μA
VF1 0.62 0.72 V IF=5mA
VF2 0.855 V IF=10mA
VF3 1.0 V IF=100mA
Forward voltage
VF4 1.25 V IF=150mA
IR1 0.1 µA VR=70V
Reverse current IR2 25 nA VR=20V
Capacitance between terminals CT 3.5 pF VR=6V,f=1MHz
Reverse Recovery Time trr 4 ns VR=6V,IF=5mA
1
FMMBD4448HAQW
Marking:KA5
Typical Characteristics
Min. Max. Min. Max.
A 0.450 0.550 0.018 0.022
A1 0.000 0.100 0.000 0.004
b 0.150 0.250 0.006 0.010
D 1.900 2.100 0.075 0.083
E 1.900 2.100 0.075 0.083
D1
E1
e
L
k
z
0. 017 R EF.
0. 500 REF. 0. 020 REF.
Symbol Dimensions In Millimeters Dimensions In Inches
0. 650 TYP. 0. 026 TYP.
0. 420 REF. 0. 017 REF.
0. 420 REF.
0. 400 REF. 0. 016 REF.
0. 300 REF. 0. 012 REF.
APPLICATION CIRCUITS
Bridge rectifiers
