Copyright 2002 Semicoa Semiconductors, Inc.
Rev. D 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 Page 1 of 2
www.SEMICOA.com
2N5666S
Silicon NPN Transisto
Data Sheet
Description
Semicoa Semiconductors offers:
• Screening and processing per MIL-PRF-19500 Appendix E
• JAN level (2N5666SJ)
• JANTX level (2N5666SJX)
• JANTXV level (2N5666SJV)
• QCI to the applicable level
• 100% die visual inspection per MIL-STD-750 method
2072 for JANTXV
• Radiation testing (total dose) upon request
Please contact Semicoa for special configurations
www.SEMICOA.com or (714) 979-1900
Applications
• General purpose high power switching
• Power Transistor
• NPN silicon transistor
Features
• Hermetically sealed TO-39 metal can
• Also available in chip configuration
• Chip geometry 9221
• Reference document:
MIL-PRF-19500/455
Benefits
• Qualification Levels: JAN, JANTX, and
JANTXV
• Radiation testing available
Absolute Maximum Ratings TC = 25°C unless otherwise specified
Parameter Symbol Rating Unit
Collector-Emitter Voltage VCEO 200
Volts
Collector-Base Voltage VCBO 250
Volts
Emitter-Base Voltage VEBO 6
Volts
Collector Current, Continuous IC 5
A
Power Dissipation, TA = 25°C
Derate linearly above 25°C PT 1.2
6.9
W
mW/°C
Power Dissipation, TC = 25°C
Derate linearly above 100°C PT 15
150
W
mW/°C
Thermal Resistance RθJA 3.3 °C/W
Operating Junction Temperature
Storage Temperature
TJ
TSTG -65 to +200 °C