To learn more about ON Semiconductor, please visit our website at
www.onsemi.com
Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers
will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor
product management systems do not have the ability to manage part nomenclature that utilizes an underscore
(_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain
device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated
device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please
email any questions regarding the system integration to Fairchild_questions@onsemi.com.
Is Now Part of
ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number
of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right
to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON
Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON
Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended
or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, afliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out
of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor
is an Equal Opportunity/Afrmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
December 2013
©2006 Fairchild Semiconductor Corporation
FQPF8N60CF Rev C1
www.fairchildsemi.com
1
FQPF8N60CF
N-Channel QFET® FRFET® MOSFET
600 V, 6.26 A, 1.5 Ω
Description Features
Absolute Maximum Ratings TC = 25°C unless otherwise noted.
Thermal Characteristics
This N-Channel enhancement mode power MOSFET is produced
using Fairchild Semiconductor’s proprietary planar stripe and
DMOS technology. This advanced MOSFET technology has
been especially tailored to reduce on-state resistance, and to
provide superior switching performance and high avalanche
energy strength. These devices are suitable for switched mode
power supplies, active power factor correction (PFC), and
electronic lamp ballasts.
6.26 A, 600 V, RDS(on) = 1.5 (Max.) @ VGS = 10 V, ID = 3.13 A
Low Gate Charge (Typ. 28 nC)
Low Crss (Typ. 12 pF)
100% Avalanche Tested
FQPF8N60CF N-Channel QFET® FRFET® MOSFET
Symbol Parameter FQPF8N60CFT Unit
RθJC Thermal Resistance, Junction to Case, Max. 2.6 oC/W
RθJA Thermal Resistance, Junction to Ambient, Max. 62.5
TO-220F
GDS
G
S
D
Symbol Parameter FQPF8N60CFT Unit
VDSS Drain-Source Voltage 600 V
IDDrain Current 6.26* A- Continuous (TC = 25°C)
- Continuous (TC = 100°C) 3.96* A
IDM Drain Current - Pulsed (Note 1) 25* A
VGSS Gate-Source Voltage ± 30 V
EAS Single Pulsed Avalanche Energy (Note 2) 160 mJ
IAR Avalanche Current (Note 1) 6.26 A
EAR Repetitive Avalanche Energy (Note 1) 14.7 mJ
dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns
PDPower Dissipation (TC = 25°C) 48 W
- Derate above 25°C 0.38 W/°C
TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C
TL
Maximum Lead Temperature for Soldering,
1/8" from Case for 5 Seconds 300 °C
* Drain current limited by maximum junction temperature
www.fairchildsemi.com
2
FQPF8N60CF N-Channel QFET® FRFET® MOSFET
©2006 Fairchild Semiconductor Corporation
FQPF8N60CF Rev C1
Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity
TO-220FTube N/A N/A 50 units
Package Marking and Ordering Information
Electrical Characteristics TC = 25°C unless otherwise noted.
FQPF8N60CFTFQPF8N60CFT
1. Repetitive rating : pulse-width limited by maximum junction temperature.
2. L = 7.3 mH, IAS = 6.26 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25°C.
3.
ISD 6.26 A, di/dt 200 A/µs, VDD BVDSS, Starting TJ = 25°C.
4. Essentially independent of operating temperature.
NOTES:
Symbol Parameter Test Conditions Min.Typ.Max.Unit
Off Characteristics
BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA 600 -- -- V
BVDSS
/ TJ
Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C -- 0.7 -- V/°C
IDSS Zero Gate Voltage Drain Current VDS = 600 V, VGS = 0 V -- -- 10 µA
VDS = 480 V, TC = 125°C -- -- 100 µA
IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA
IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA
On Characteristics
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA2.0--4.0V
RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 3.13 A -- 1.25 1.5
gFS Forward Transconductance VDS = 40 V, ID = 3.13 A -- 8.7 -- S
Dynamic Characteristics
Ciss Input Capacitance VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
-- 965 1255 pF
Coss Output Capacitance -- 105 135 pF
Crss Reverse Transfer Capacitance -- 12 16 pF
Switching Characteristics
td(on) Turn-On Delay Time VDD = 300 V, ID = 6.26A,
RG = 25
(Note 4)
-- 16.5 45 ns
trTurn-On Rise Time -- 60.5 130 ns
td(off) Turn-Off Delay Time -- 81 170 ns
tfTurn-Off Fall Time -- 64.5 140 ns
QgTotal Gate Charge VDS = 480 V, ID = 6.26A,
VGS = 10 V
(Note 4)
-- 28 36 nC
Qgs Gate-Source Charge -- 4.5 -- nC
Qgd Gate-Drain Charge -- 12 -- nC
Drain-Source Diode Characteristics and Maximum Ratings
ISMaximum Continuous Drain-Source Diode Forward Current -- -- 6.26 A
ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 25 A
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 6.26 A -- -- 1.4 V
trr Reverse Recovery Time VGS = 0 V, IS = 6.26 A,
dIF / dt = 100 A/µs
-- 82 -- ns
Qrr Reverse Recovery Charge -- 242 -- nC
www.fairchildsemi.com
3
FQPF8N60CF N-Channel QFET® FRFET® MOSFET
©2006 Fairchild Semiconductor Corporation
FQPF8N60CF Rev C1
Typical Performance Characteristics
Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics
Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage
Drain Current and Gate Voltage Variation vs. Source Current
and Temperatue
Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
10-1 0101
10-1
100
101
VGS
Top : 15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
Bottom : 5.0 V
Notes :
1. 250µ s Pulse Test
2. TC
= 25
ID, Drain Current [A]
10
VDS, Drain-Source Voltage [V]
22 810
10-1
100
101
150oC
25oC
-55oC
Notes :
1. VDS = 40V
2. 250µ s Pulse Test
ID, Drain Current [A]
4
VGS, Gate-Source Voltage [V]
0.2 0.4 0.6 0.8 1.0 1.2 1.4
10-1
100
101
150 Notes :
1. VGS = 0V
2. 250µ s Pulse Test
25
IDR, Reverse Drain Current [A]
V
SD, Source-Drain voltage [V]
0 5 10 15 20
0.5
1.0
1.5
2.0
2.5
3.0
3.5
VGS = 20V
VGS = 10V
Note : TJ = 25
RDS(ON) [],
Drain-Source On-Resistance
ID
, Drain Current [A]
0 5 10 15 20 25 30
0
2
4
6
8
10
12
VDS = 300V
VDS = 120V
VDS = 480V
* Note : ID = 6.26A
VGS, Gate-Source Voltage [V]
QG, Total Gate Charge [nC]
10-1 0101
0
200
400
600
800
1000
1200
1400
1600
1800
2000 C
iss = Cgs + Cgd (Cds = shorted)
C
os
rss
s
= Cgd
ds
C = C + Cgd
Notes ;
1. VGS = 0 V
2. f = 1 MHz
C
rss
C
oss
C
iss
Capacitance [pF]
10
V
DS, Drain-Source Voltage [V]
6
www.fairchildsemi.com
4
FQPF8N60CF N-Channel QFET® FRFET® MOSFET
©2006 Fairchild Semiconductor Corporation
FQPF8N60CF Rev C1
Typical Performance Characteristics (Continued)
ZθJC(t), Thermal Response [oC/W]
Figure 7. Breakdown Volt age Variation Figure 8. On-Resistance Variation
vs. Temperature vs. Temperature
TJ, Junction Temperature [oC]
Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current
vs. Case Temperature
VDS, Drain-SourceVoltage[V]
Figure 11. Transient Thermal Response Curve
-100 -50 0 50 100 150 200
0.8
0.9
1.0
1.1
1.2
* Notes :
1. VGS = 0 V
2. ID
= 250
BVDSS, (Normalized)
Drain-Source Breakdown Voltage
-100 -50 0 50 100 150 200
0.0
0.5
1.0
1.5
2.0
2.5
3.0
* Notes :
1. VGS = 10 V
2. ID = 3.13 A
RDS(ON), (Normalized)
Drain-Source On-Resistance
TJ, Junction Temperature [oC]
100101102103
10-2
10-1
100
101
102
DC
100ms
10ms
1ms
100 µs
10 µs
Operation in This Area
is Limited by R DS(on)
* : Notes
1. TC = 25 oC
2. TJ = 150 oC
3. Single Pulse
ID, Drain Current [A]
25 50 75 100 125 150
0
2
4
6
8
ID, Drain Current [A]
TC, Case Temperature [oC]
10-5 10-4 10-3 10-2 10-1 100101
10-2
10-1
100
* Notes :
1. Z?JC
(t) = 2.6 ? /W Max.
2. Duty Factor, D=t1/t2
3. TJM - TC = PDM * Z?JC
(t)
single pulse
D=0.5
0.02
0.2
0.05
0.1
0.01
t1, Square Wave Pulse Duration [sec]
t1
PDM
t2
www.fairchildsemi.com
5
FQPF8N60CF N-Channel QFET® FRFET® MOSFET
©2006 Fairchild Semiconductor Corporation
FQPF8N60CF Rev C1
Figure 12. Gate Charge Test Circuit & Waveform
Figure 13. Resistive Switching Test Circuit & Waveforms
Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms
VVGSGS
VVDSDS
1010%%
90%90%
ttd(d(onon)) ttrr
tt onon tt ofofff
ttd(d(ooffff)) ttff
VVDDDD
VVDSDS
RRLL
DUDUTT
RRGG
VVGSGS
ChaCharrgege
VVGSGS
10V10V
QQgg
QQgsgs QQgdgd
VVGSGS
DUDUTT
VVDSDS
300n300nFF
50K50KΩΩ
200n200nFF
12V12V
SamSamee TTyypepe
as as DUDUTT
===
EEEASASAS --------
2
1
2
1
2
1
2
1
-------- LLL
ASASAS
III
BVBVDSSDSS
222 ----------------------------------------
BVBVDSDSSS -V-V
DDDD
VVDDDD
VVDSDS
BVBVDSDSSS
t t pp
VVDDDD
IIASAS
VVDS DS (t)(t)
IID D (t)(t)
TiTimmee
DUTDUT
RRGG
LLL
III DDD
t t pp
VVGSGS
VVGSGS
IG = const.
www.fairchildsemi.com
6
Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
VDS
+
_
Driver
RGSame Type
as DUT
VGS dv/dt controlled by RG
•I
SD controlled by pulse period
VDD
L
ISD
10V
VGS
( Driver )
ISD
( DUT )
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
VSD
IFM , Body Diode Forward Current
Body Diode Reverse Current
IRM
Body Diode Recovery dv/dt
di/dt
D = Gate Pulse Width
Gate Pulse Period
--------------------------
DUT
VDS
+
_
Driver
RGSame Type
as DUT
VGS dv/dt controlled by RG
•I
SD controlled by pulse period
VDD
LL
ISD
10V
VGS
( Driver )
ISD
( DUT )
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
VSD
IFM , Body Diode Forward Current
Body Diode Reverse Current
IRM
Body Diode Recovery dv/dt
di/dt
D = Gate Pulse Width
Gate Pulse Period
--------------------------
D = Gate Pulse Width
Gate Pulse Period
--------------------------
FQPF8N60CF N-Channel QFET® FRFET® MOSFET
©2006 Fairchild Semiconductor Corporation
FQPF8N60CF Rev C1
www.fairchildsemi.com
7
FQPF8N60CF N-Channel QFET® FRFET® MOSFET
©2006 Fairchild Semiconductor Corporation
FQPF8N60CF Rev C1
Mechanical Dimensions
Figure 16. TO220, Molded, 3-Lead, Full Pack, EIAJ SC91, Straight Lead
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specif-
ically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TF220-003
www.fairchildsemi.com
8
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY
PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY
THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used here in:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.
2. A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
AccuPower
AX-CAP®*
BitSiC™
Build it Now™
CorePLUS™
CorePOWER™
CROSSVOLT
CTL™
Current Transfer Logic™
DEUXPEED®
Dual Cool™
EcoSPARK®
EfficentMax™
ESBC™
Fairchild®
Fairchild Semiconductor®
FACT Quiet Series™
FACT®
FAST®
FastvCore™
FETBench™
FPS™
F-PFS™
FRFET®
Global Power ResourceSM
GreenBridge™
Green FPS™
Green FPS™ e-Series™
Gmax
GTO™
IntelliMAX™
ISOPLANAR™
Marking Small Speakers Sound Louder
and Better™
MegaBuck™
MICROCOUPLER™
MicroFET™
MicroPak™
MicroPak2™
MillerDrive™
MotionMax™
mWSaver®
OptoHiT™
OPTOLOGIC®
OPTOPLANAR®
PowerTrench®
PowerXS™
Programmable Active Droop™
QFET®
QS™
Quiet Series
RapidConfigure™
Saving our world, 1mW/W/kW at a time™
SignalWise™
SmartMax™
SMART START™
Solutions for Your Success™
SPM®
STEALTH
SuperFET®
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SupreMOS®
SyncFET™
Sync-Lock™
®*
TinyBoost®
TinyBuck®
TinyCalc™
TinyLogic®
TINYOPTO™
TinyPower™
TinyPWM™
TinyWire™
TranSiC™
TriFault Detect™
TRUECURRENT®*
SerDes™
UHC®
Ultra FRFET™
UniFET™
VCX™
VisualMax™
VoltagePlus™
XS™
®
Datasheet Identification Product Status Definition
Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Preliminary First Production
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
ANTI-COUNTERFEITING POLICY
Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website,
www.Fairchildsemi.com, under Sales Support.
Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their
parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed
application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the
proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild
Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild
Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of
up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and
warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is
committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors.
Rev. I66
tm
®
FQPF8N60CF N-Channel QFET® FRFET® MOSFET
Obsolete
©2006 Fairchild Semiconductor Corporation
FQPF8N60CF Rev C1
www.onsemi.com
1
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/PatentMarking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
N. American Technical Support: 8002829855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81358171050
www.onsemi.com
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA
Phone: 3036752175 or 8003443860 Toll Free USA/Canada
Fax: 3036752176 or 8003443867 Toll Free USA/Canada
Email: orderlit@onsemi.com
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
© Semiconductor Components Industries, LLC