NGTB40N120FL2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft and fast co-packaged free wheeling diode with a low forward voltage. www.onsemi.com Features * * * * * * 40 A, 1200 V VCEsat = 2.0 V Eoff = 1.10 mJ Extremely Efficient Trench with Field Stop Technology TJmax = 175C Soft Fast Reverse Recovery Diode Optimized for High Speed Switching 10 ms Short Circuit Capability These are Pb-Free Devices C Typical Applications * Solar Inverter * Uninterruptible Power Inverter Supplies (UPS) * Welding G E ABSOLUTE MAXIMUM RATINGS Rating Symbol Value Unit Collector-emitter voltage VCES 1200 V Collector current @ TC = 25C @ TC = 100C IC Pulsed collector current, Tpulse limited by TJmax Diode forward current @ TC = 25C @ TC = 100C A 80 40 ICM G C 200 TO-247 CASE 340AL E A IF A 80 40 Diode pulsed current, Tpulse limited by TJmax IFM 200 A Gate-emitter voltage Transient gate-emitter voltage (Tpulse = 5 ms, D < 0.10) VGE 20 30 V Power Dissipation @ TC = 25C @ TC = 100C PD Short Circuit Withstand Time VGE = 15 V, VCE = 500 V, TJ 150C TSC 10 ms Operating junction temperature range TJ -55 to +175 C Storage temperature range Tstg -55 to +175 C Lead temperature for soldering, 1/8 from case for 5 seconds TSLD 260 C MARKING DIAGRAM 40N120FL2 AYWWG W 535 267 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. A Y WW G = Assembly Location = Year = Work Week = Pb-Free Package ORDERING INFORMATION Device NGTB40N120FL2WG (c) Semiconductor Components Industries, LLC, 2015 April, 2015 - Rev. 6 1 Package Shipping TO-247 30 Units / Rail (Pb-Free) Publication Order Number: NGTB40N120FL2W/D NGTB40N120FL2WG THERMAL CHARACTERISTICS Symbol Value Unit Thermal resistance junction-to-case, for IGBT Rating RqJC 0.28 C/W Thermal resistance junction-to-case, for Diode RqJC 0.5 C/W Thermal resistance junction-to-ambient RqJA 40 C/W ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise specified) Test Conditions Symbol Min Typ Max Unit VGE = 0 V, IC = 500 mA V(BR)CES 1200 - - V VGE = 15 V, IC = 40 A VGE = 15 V, IC = 40 A, TJ = 175C VCEsat - - 2.00 2.40 2.40 - V VGE = VCE, IC = 400 mA VGE(th) 4.5 5.5 6.5 V Collector-emitter cut-off current, gate- emitter short-circuited VGE = 0 V, VCE = 1200 V VGE = 0 V, VCE = 1200 V, TJ = 175C ICES - - - - 0.1 2 mA Gate leakage current, collector-emitter short-circuited VGE = 20 V , VCE = 0 V IGES - - 200 nA Cies - 7385 - pF VCE = 20 V, VGE = 0 V, f = 1 MHz Coes - 230 - Parameter STATIC CHARACTERISTIC Collector-emitter breakdown voltage, gate-emitter short-circuited Collector-emitter saturation voltage Gate-emitter threshold voltage Input capacitance Output capacitance Reverse transfer capacitance Cres - 140 - Gate charge total Qg - 313 - Gate to emitter charge Qge - 61 - Qgc - 151 - td(on) - 116 - tr - 42 - td(off) - 286 - tf - 121 - Eon - 3.4 - Turn-off switching loss Eoff - 1.1 - Total switching loss Ets - 4.5 - Turn-on delay time td(on) - 111 - tr - 43 - td(off) - 304 - VCE = 600 V, IC = 40 A, VGE = 15 V Gate to collector charge nC SWITCHING CHARACTERISTIC, INDUCTIVE LOAD Turn-on delay time Rise time Turn-off delay time Fall time Turn-on switching loss TJ = 25C VCC = 600 V, IC = 40 A Rg = 10 W VGE = 0 V/ 15V Rise time Turn-off delay time Fall time TJ = 175C VCC = 600 V, IC = 40 A Rg = 10 W VGE = 0 V/ 15 V ns mJ ns tf - 260 - Eon - 4.4 - Turn-off switching loss Eoff - 2.5 - Total switching loss Ets - 6.9 - VF - - 2.00 2.30 2.60 - V Turn-on switching loss mJ DIODE CHARACTERISTIC Forward voltage Reverse recovery time Reverse recovery charge VGE = 0 V, IF = 40 A VGE = 0 V, IF = 50 A, TJ = 175C TJ = 25C IF = 40 A, VR = 400 V diF/dt = 200 A/ms Reverse recovery current Reverse recovery time Reverse recovery charge TJ = 175C IF = 40 A, VR = 400 V diF/dt = 200 A/ms Reverse recovery current trr - 240 - ns Qrr - 2.5 - mc Irrm - 18 - A trr - 392 - ns Qrr - 5.36 - mc Irrm - 25.80 - A Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2 NGTB40N120FL2WG TYPICAL CHARACTERISTICS 160 TJ = 25C 140 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) 160 VGE = 20 V to 13 V 120 100 11 V 80 10 V 60 40 9V 20 7V 8V 0 0 1 2 3 4 5 7 6 120 100 11 V 80 10 V 60 9V 40 8V 20 7V 8 1 2 3 4 5 6 7 VCE, COLLECTOR-EMITTER VOLTAGE (V) VCE, COLLECTOR-EMITTER VOLTAGE (V) Figure 1. Output Characteristics Figure 2. Output Characteristics 8 160 140 IC, COLLECTOR CURRENT (A) TJ = -55C VGE = 20 V to 13 V 120 11 V 100 80 60 10 V 40 7V 20 9V 8V 0 0 1 2 3 4 5 6 7 140 120 100 80 60 40 TJ = 150C 20 0 0 8 TJ = 25C 1 2 3 4 5 6 7 8 9 10 11 12 13 VCE, COLLECTOR-EMITTER VOLTAGE (V) VGE, GATE-EMITTER VOLTAGE (V) Figure 3. Output Characteristics Figure 4. Typical Transfer Characteristics 3.50 4.0 IC = 75 A 3.00 VF, FORWARD VOLTAGE (V) IC, COLLECTOR CURRENT (A) VGE = 20 V to 13 V 0 160 VCE, COLLECTOR-EMITTER VOLTAGE (V) TJ = 150C 140 IC = 40 A 2.50 2.00 IC = 20 A 1.50 1.00 0.50 0.00 -75 -50 -25 0 25 50 3.5 IF = 80 A 3.0 2.5 IF = 40 A 2.0 IF = 20 A 1.5 1.0 -75 -50 -25 75 100 125 150 175 200 0 25 50 75 100 125 150 175 200 TJ, JUNCTION TEMPERATURE (C) TJ, JUNCTION TEMPERATURE (C) Figure 5. VCE(sat) vs TJ Figure 6. VF vs. TJ www.onsemi.com 3 NGTB40N120FL2WG TYPICAL CHARACTERISTICS 100000 70 IF, FORWARD CURRENT (A) C, CAPACITANCE (pF) TJ = 25C Cies 10000 1000 Coes 100 Cres 10 1 10 20 30 40 60 50 70 30 20 10 90 100 80 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 VCE, COLLECTOR-EMITTER VOLTAGE (V) VF, FORWARD VOLTAGE (V) Figure 7. Typical Capacitance Figure 8. Diode Forward Characteristics 5 14 4.5 10 8 6 4 VCE = 600 V VGE = 15 V IC = 40 A 2 0 50 100 200 150 250 300 4.0 Eon 4 VCE = 600 V 12 SWITCHING LOSS (mJ) VGE, GATE-EMITTER VOLTAGE (V) TJ = 150C 40 16 0 TJ = 25C 50 0 0 3.5 3 2.5 Eoff 2 1.5 VCE = 600 V VGE = 15 V IC = 40 A Rg = 10 W 1 0.5 0 350 0 20 40 60 80 100 120 140 QG, GATE CHARGE (nC) TJ, JUNCTION TEMPERATURE (C) Figure 9. Typical Gate Charge Figure 10. Switching Loss vs. Temperature 1000 160 12 td(off) tf 100 td(on) tr VCE = 600 V VGE = 15 V IC = 40 A Rg = 10 W 10 0 20 40 VCE = 600 V VGE = 15 V TJ = 150C Rg = 10 W 10 SWITCHING LOSS (mJ) SWITCHING TIME (ns) 60 60 80 100 120 140 8 Eon 6 Eoff 4 2 0 160 5 15 25 35 45 55 65 TJ, JUNCTION TEMPERATURE (C) IC, COLLECTOR CURRENT (A) Figure 11. Switching Time vs. Temperature Figure 12. Switching Loss vs. IC www.onsemi.com 4 75 85 NGTB40N120FL2WG TYPICAL CHARACTERISTICS 14 1000 VCE = 600 V VGE = 15 V TJ = 150C IC = 40 A td(off) SWITCHING LOSS (mJ) SWITCHING TIME (ns) 12 tf td(on) 100 tr 10 5 15 VCE = 600 V VGE = 15 V TJ = 150C Rg = 10 W 25 35 45 55 65 75 8 6 4 Eoff 0 5 85 15 25 35 55 45 Rg, GATE RESISTOR (W) Figure 13. Switching Time vs. IC Figure 14. Switching Loss vs. Rg td(off) 100 tr 5 Eon 4 3 Eoff 2 VGE = 15 V TJ = 150C IC = 40 A Rg = 10 W 1 15 25 35 45 55 65 75 0 350 85 400 450 500 550 600 650 700 750 800 Rg, GATE RESISTOR (W) VCE, COLLECTOR-EMITTER VOLTAGE (V) Figure 15. Switching Time vs. Rg Figure 16. Switching Loss vs. VCE 1000 1000 IC, COLLECTOR CURRENT (A) SWITCHING TIME (ns) 85 6 td(on) td(off) tf td(on) 100 tr 10 350 75 7 VCE = 600 V VGE = 15 V TJ = 150C IC = 40 A tf 10 5 65 IC, COLLECTOR CURRENT (A) SWITCHING LOSS (mJ) SWITCHING TIME (ns) Eon 2 10000 1000 10 VGE = 15 V TJ = 150C IC = 40 A Rg = 10 W 400 450 500 550 600 650 700 100 50 ms 10 1 ms 1 Single Nonrepetitive Pulse TC = 25C Curves must be derated linearly with increase in temperature 0.1 0.01 750 800 100 ms dc operation 1 10 100 1000 VCE, COLLECTOR-EMITTER VOLTAGE (V) VCE, COLLECTOR-EMITTER VOLTAGE (V) Figure 17. Switching Time vs. VCE Figure 18. Safe Operating Area www.onsemi.com 5 10000 NGTB40N120FL2WG TYPICAL CHARACTERISTICS 650 10 VGE = 15 V, TC = 125C 1 1 10 550 450 TJ = 175C, IF = 40 A 350 250 150 TJ = 25C, IF = 40 A 50 100 1000 10000 100 300 500 700 900 1100 VCE, COLLECTOR-EMITTER VOLTAGE (V) diF/dt, DIODE CURRENT SLOPE (A/m) Figure 19. Reverse Bias Safe Operating Area Figure 20. trr vs. diF/dt (VR = 400 V) Irm, REVERSE RECOVERY CURRENT (A) Qrr, REVERSE RECOVERY CHARGE (mC) trr, REVERSE RECOVERY TIME (ns) 100 6 TJ = 175C, IF = 40 A 5 4 TJ = 25C, IF = 40 A 3 2 1 0 100 300 500 700 900 1100 1300 60 TJ = 175C, IF = 40 A 50 40 TJ = 25C, IF = 40 A 30 20 10 0 100 300 500 700 900 1100 diF/dt, DIODE CURRENT SLOPE (A/m) Figure 21. Qrr vs. diF/dt (VR = 400 V) Figure 22. Irm vs. diF/dt (VR = 400 V) 250 VCE = 600 V, RG = 10 W, VGE = 0/15 V 200 TC = 80C TC = 80C TC = 110C 150 100 50 0 0.01 0.1 1 10 100 FREQUENCY (kHz) Figure 23. Collector Current vs. Switching Frequency www.onsemi.com 6 1300 70 diF/dt, DIODE CURRENT SLOPE (A/m) Ipk (A) IC, COLLECTOR CURRENT (A) 1000 1000 1300 NGTB40N120FL2WG TYPICAL CHARACTERISTICS SQUARE-WAVE PEAK R(t) (C/W) 1 RqJC = 0.28 50% Duty Cycle 0.1 20% 10% 5% 0.01 R1 Junction R2 Rn Case 2% C1 0.001 1E-05 Ci (J/C) 0.006487 0.023120 0.061163 0.092651 1.252250 Duty Factor = t1/t2 Peak TJ = PDM x ZqJC + TC Single Pulse 0.0001 1E-06 Cn C2 Ri (C/W) 0.048747 0.043252 0.051703 0.107932 0.025253 0.0001 0.001 0.01 0.1 1 ON-PULSE WIDTH (s) Figure 24. IGBT Transient Thermal Impedance SQUARE-WAVE PEAK R(t) (C/W) 1 RqJC = 0.50 50% Duty Cycle 0.1 20% 10% 5% 2% Junction R1 R2 Rn C1 C2 Cn 0.01 Single Pulse 0.001 1E-06 Duty Factor = t1/t2 Peak TJ = PDM x ZqJC + TC 1E-05 0.0001 0.001 0.01 ON-PULSE WIDTH (s) Figure 25. Diode Transient Thermal Impedance www.onsemi.com 7 Case Ri (C/W) Ci (J/C) 0.007703 0.010613 0.010097 0.032329 0.046791 0.044179 0.083870 0.000130 0.000942 0.003132 0.003093 0.006758 0.022635 0.119232 0.044938 0.703706 0.217376 0.460033 0.1 1 NGTB40N120FL2WG Figure 26. Test Circuit for Switching Characteristics Figure 27. Definition of Turn On Waveform www.onsemi.com 8 NGTB40N120FL2WG Figure 28. Definition of Turn Off Waveform www.onsemi.com 9 NGTB40N120FL2WG PACKAGE DIMENSIONS TO-247 CASE 340AL ISSUE A B A NOTE 4 E SEATING PLANE 0.635 M P A Q E2 D S NOTE 3 1 2 4 DIM A A1 b b2 b4 c D E E2 e L L1 P Q S 3 L1 NOTE 5 L 2X b2 c b4 3X e A1 b 0.25 NOTE 7 M B A M NOTE 6 E2/2 NOTE 4 B A NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. SLOT REQUIRED, NOTCH MAY BE ROUNDED. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH. MOLD FLASH SHALL NOT EXCEED 0.13 PER SIDE. THESE DIMENSIONS ARE MEASURED AT THE OUTERMOST EXTREME OF THE PLASTIC BODY. 5. LEAD FINISH IS UNCONTROLLED IN THE REGION DEFINED BY L1. 6. P SHALL HAVE A MAXIMUM DRAFT ANGLE OF 1.5 TO THE TOP OF THE PART WITH A MAXIMUM DIAMETER OF 3.91. 7. DIMENSION A1 TO BE MEASURED IN THE REGION DEFINED BY L1. M MILLIMETERS MIN MAX 4.70 5.30 2.20 2.60 1.00 1.40 1.65 2.35 2.60 3.40 0.40 0.80 20.30 21.40 15.50 16.25 4.32 5.49 5.45 BSC 19.80 20.80 3.50 4.50 3.55 3.65 5.40 6.20 6.15 BSC ON Semiconductor and the are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81-3-5817-1050 www.onsemi.com 10 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative NGTB40N120FL2W/D Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: ON Semiconductor: NGTB40N120FL2WG