© Semiconductor Components Industries, LLC, 2015
April, 2015 − Rev. 6 1Publication Order Number:
NGTB40N120FL2W/D
NGTB40N120FL2WG
IGBT - Field Stop II
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Field Stop II T rench construction, and provides superior
performance in demanding switching applications, offering both low
on state voltage and minimal switching loss. The IGBT is well suited
for UPS and solar applications. Incorporated into the device is a soft
and fast co−packaged free wheeling diode with a low forward voltage.
Features
•Extremely Efficient Trench with Field Stop Technology
•TJmax = 175°C
•Soft Fast Reverse Recovery Diode
•Optimized for High Speed Switching
•10 ms Short Circuit Capability
•These are Pb−Free Devices
Typical Applications
•Solar Inverter
•Uninterruptible Power Inverter Supplies (UPS)
•Welding
ABSOLUTE MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−emitter voltage VCES 1200 V
Collector current
@ TC = 25°C
@ TC = 100°C
IC80
40
A
Pulsed collector current, Tpulse
limited by TJmax ICM 200 A
Diode forward current
@ TC = 25°C
@ TC = 100°C
IF80
40
A
Diode pulsed current, Tpulse limited
by TJmax IFM 200 A
Gate−emitter voltage
T ransient gate−emitter voltage
(Tpulse = 5 ms, D < 0.10)
VGE ±20
±30 V
Power Dissipation
@ TC = 25°C
@ TC = 100°C
PD535
267
W
Short Circuit Withstand Time
VGE = 15 V, VCE = 500 V, TJ ≤ 150°CTSC 10 ms
Operating junction temperature range TJ−55 to +175 °C
Storage temperature range Tstg −55 to +175 °C
Lead temperature for soldering, 1/8″
from case for 5 seconds TSLD 260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be af fected.
TO−247
CASE 340AL
C
G
40 A, 1200 V
VCEsat = 2.0 V
Eoff = 1.10 mJ
E
Device Package Shipping
ORDERING INFORMATION
NGTB40N120FL2WG TO−247
(Pb−Free) 30 Units / Ra
il
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A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
MARKING DIAGRAM
40N120FL2
AYWWG
G
E
C
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THERMAL CHARACTERISTICS
Rating Symbol Value Unit
Thermal resistance junction−to−case, for IGBT RqJC 0.28 °C/W
Thermal resistance junction−to−case, for Diode RqJC 0.5 °C/W
Thermal resistance junction−to−ambient RqJA 40 °C/W
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter Test Conditions Symbol Min Typ Max Unit
STATIC CHARACTERISTIC
Collector−emitter breakdown voltage,
gate−emitter short−circuited VGE = 0 V, IC = 500 mAV(BR)CES 1200 − − V
Collector−emitter saturation voltage VGE = 15 V, IC = 40 A
VGE = 15 V, IC = 40 A, TJ = 175°CVCEsat −
−2.00
2.40 2.40
−V
Gate−emitter threshold voltage VGE = VCE, IC = 400 mAVGE(th) 4.5 5.5 6.5 V
Collector−emitter cut−off current, gate−
emitter short−circuited VGE = 0 V, VCE = 1200 V
VGE = 0 V, VCE = 1200 V, TJ = 175°CICES −
−−
−0.1
2mA
Gate leakage current, collector−emitter
short−circuited VGE = 20 V , VCE = 0 V IGES − − 200 nA
Input capacitance
VCE = 20 V, VGE = 0 V, f = 1 MHz
Cies − 7385 − pF
Output capacitance Coes − 230 −
Reverse transfer capacitance Cres − 140 −
Gate charge total
VCE = 600 V, IC = 40 A, VGE = 15 V
Qg− 313 − nC
Gate to emitter charge Qge − 61 −
Gate to collector charge Qgc − 151 −
SWITCHING CHARACTERISTIC, INDUCTIVE LOAD
T urn−on delay time
TJ = 25°C
VCC = 600 V, IC = 40 A
Rg = 10 W
VGE = 0 V/ 15V
td(on) −116 −ns
Rise time tr− 42 −
T urn−off delay time td(off) − 286 −
Fall time tf− 121 −
Turn−on switching loss Eon − 3.4 − mJ
T urn−off switching loss Eoff − 1.1 −
Total switching loss Ets − 4.5 −
T urn−on delay time
TJ = 175°C
VCC = 600 V, IC = 40 A
Rg = 10 W
VGE = 0 V/ 15 V
td(on) −111 −ns
Rise time tr− 43 −
T urn−off delay time td(off) − 304 −
Fall time tf− 260 −
Turn−on switching loss Eon − 4.4 − mJ
T urn−off switching loss Eoff − 2.5 −
Total switching loss Ets − 6.9 −
DIODE CHARACTERISTIC
Forward voltage VGE = 0 V, IF = 40 A
VGE = 0 V, IF = 50 A, TJ = 175°CVF−
−2.00
2.30 2.60
−V
Reverse recovery time TJ = 25°C
IF = 40 A, VR = 400 V
diF/dt = 200 A/ms
trr − 240 − ns
Reverse recovery charge Qrr − 2.5 − mc
Reverse recovery current Irrm − 18 − A
Reverse recovery time TJ = 175°C
IF = 40 A, VR = 400 V
diF/dt = 200 A/ms
trr − 392 − ns
Reverse recovery charge Qrr − 5.36 − mc
Reverse recovery current Irrm − 25.80 − A
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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TYPICAL CHARACTERISTICS
Figure 1. Output Characteristics Figure 2. Output Characteristics
VCE, COLLECTOR−EMITTER VOLTAGE (V) VCE, COLLECTOR−EMITTER VOLTAGE (V)
86543210
160
Figure 3. Output Characteristics Figure 4. Typical Transfer Characteristics
VCE, COLLECTOR−EMITTER VOLTAGE (V) VGE, GATE−EMITTER VOLTAGE (V)
1050
Figure 5. V
CE(sat)
vs T
J
TJ, JUNCTION TEMPERATURE (°C)
1751501251007550250
3.00
I
C
, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
7
VGE = 20 V
to 13 V
TJ = 25°C
9 V
8 V
7 V
8
654321
160
IC, COLLECTOR CURRENT (A)
7
TJ = 150°C
9 V
8 V
7 V
86543210
160
I
C
, COLLECTOR CURRENT (A)
7
TJ = −55°C
9 V
8 V TJ = 25°C
TJ = 150°C
200
VGE = 20 V
to 13 V
VGE = 20 V
to 13 V
1234 6789
−75 −50 −25
2.50
2.00
1.50
1.00
0.50
0.00
IC = 75 A
IC = 40 A
IC = 20 A
Figure 6. V
F
vs. T
J
10 V
11 V
140
120
100
80
60
40
20
0
10 V
11 V
7 V
10 V
11 V
140
120
100
80
60
40
20
0
140
120
100
80
60
40
20
011 12 1
3
160
140
120
100
80
60
40
20
0
3.50
TJ, JUNCTION TEMPERATURE (°C)
175125100500−25−50−75
1.0
1.5
2.0
2.5
3.0
3.5
4.0
VF, FORWARD VOLTAGE (V)
25 75 150 20
0
IF = 40 A
IF = 20 A
IF = 80 A
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TYPICAL CHARACTERISTICS
Figure 7. Typical Capacitance
VCE, COLLECTOR−EMITTER VOLTAGE (V)
908050403020100
100000
C, CAPACITANCE (pF)
100
Cies
Coes
Cres
7060
TJ = 25°C
10000
1000
100
10
1
Figure 8. Diode Forward Characteristics
VF, FORWARD VOLTAGE (V)
3.02.52.01.51.00.50
70
IF, FORWARD CURRENT (A)
TJ = 25°C
TJ = 150°C
60
50
40
30
20
10
03.5 4.0
Figure 9. Typical Gate Charge
QG, GATE CHARGE (nC)
150100500
0
2
4
6
8
12
14
16
VGE, GATE−EMITTER VOLTAGE (V)
200
10
VCE = 600 V
VCE = 600 V
VGE = 15 V
IC = 40 A
250 300 350
Figure 10. Switching Loss vs. Temperature
TJ, JUNCTION TEMPERATURE (°C)
140120100806040200
5
SWITCHING LOSS (mJ)
160
VCE = 600 V
VGE = 15 V
IC = 40 A
Rg = 10 W
Eoff
Eon
4.5
4
3.5
3
2.5
2
1.5
1
0.5
0
Figure 11. Switching Time vs. Temperature
TJ, JUNCTION TEMPERATURE (°C)
140120100806040200
100
1000
SWITCHING TIME (ns)
160
VCE = 600 V
VGE = 15 V
IC = 40 A
Rg = 10 W
tr
td(on)
tf
td(off)
10
Figure 12. Switching Loss vs. IC
IC, COLLECTOR CURRENT (A)
453525155
12
SWITCHING LOSS (mJ)
VCE = 600 V
VGE = 15 V
TJ = 150°C
Rg = 10 W
Eoff
Eon
10
8
6
4
2
055 65 75 85
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TYPICAL CHARACTERISTICS
Figure 13. Switching Time vs. IC
IC, COLLECTOR CURRENT (A)
100
1000
SWITCHING TIME (ns)
VCE = 600 V
VGE = 15 V
TJ = 150°C
Rg = 10 W
tr
td(on)
tf
td(off)
45352515555657585
10
Figure 14. Switching Loss vs. Rg
Rg, GATE RESISTOR (W)
453525155
SWITCHING LOSS (mJ)
14 VCE = 600 V
VGE = 15 V
TJ = 150°C
IC = 40 A
Eoff
55 65 75 85
Eon
12
10
8
6
4
2
0
Figure 15. Switching Time vs. Rg
Rg, GATE RESISTOR (W)
453525155
SWITCHING TIME (ns)
10000
55 65 75 85
1000
tr
td(on)
tf
td(off)
VCE = 600 V
VGE = 15 V
TJ = 150°C
IC = 40 A
100
10
Figure 16. Switching Loss vs. VCE
VCE, COLLECTOR−EMITTER VOLTAGE (V)
550500450400350
SWITCHING LOSS (mJ)
7
650 700 750 800600
Eoff
VGE = 15 V
TJ = 150°C
IC = 40 A
Rg = 10 W
6
5
4
3
2
1
0
Eon
Figure 17. Switching Time vs. VCE
VCE, COLLECTOR−EMITTER VOLTAGE (V)
550500450400350 650 700 750 800600
SWITCHING TIME (ns)
1000
100
VGE = 15 V
TJ = 150°C
IC = 40 A
Rg = 10 W
tr
td(on)
tf
td(off)
10
Figure 18. Safe Operating Area
VCE, COLLECTOR−EMITTER VOLTAGE (V)
IC, COLLECTOR CURRENT (A)
1000100101
0.01
0.1
1
10
100
1000
50 ms
100 ms
1 ms
dc operation
Single Nonrepetitive
Pulse TC = 25°C
Curves must be derated
linearly with increase
in temperature
10000
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TYPICAL CHARACTERISTICS
Figure 19. Reverse Bias Safe Operating Area
VCE, COLLECTOR−EMITTER VOLTAGE (V)
IC, COLLECTOR CURRENT (A)
1
10
100
1000
VGE = 15 V, TC = 125°C
1000100101 10000
Figure 20. trr vs. diF/dt (VR = 400 V)
diF/dt, DIODE CURRENT SLOPE (A/m)
13001100900700500300100
50
150
250
350
450
550
650
trr, REVERSE RECOVERY TIME (ns)
TJ = 25°C, IF = 40 A
TJ = 175°C, IF = 40 A
Figure 21. Qrr vs. diF/dt (VR = 400 V)
diF/dt, DIODE CURRENT SLOPE (A/m)
13001100900700500300100
0
1
2
3
4
5
6
Qrr, REVERSE RECOVERY CHARGE (mC)
TJ = 25°C, IF = 40 A
TJ = 175°C, IF = 40 A
Figure 22. Irm vs. diF/dt (VR = 400 V)
diF/dt, DIODE CURRENT SLOPE (A/m)
13001100900700500300100
0
10
20
30
40
50
60
70
Irm, REVERSE RECOVERY CURRENT (A)
TJ = 25°C, IF = 40 A
TJ = 175°C, IF = 40 A
250
0.01
FREQUENCY (kHz)
Ipk (A)
0.1 1 10 100 1000
Figure 23. Collector Current vs. Switching
Frequency
TC = 110°C
TC = 80°C
VCE = 600 V, RG = 10 W, VGE = 0/15 V
TC = 80°C
200
150
100
50
0
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TYPICAL CHARACTERISTICS
Figure 24. IGBT Transient Thermal Impedance
ON−PULSE WIDTH (s)
10.10.010.00011E−06
1
SQUARE−WAVE PEAK R(t) (°C/W)
1E−05
50% Duty Cycle
20%
10%
5%
2%
Single Pulse
RqJC = 0.28
Junction
C1C2
R1R2
Duty Factor = t1/t2
Peak TJ = PDM x ZqJC + TC
Case
Cn
Rn
0.1
0.01
0.001
0.0001 0.001
Ri (°C/W) Ci (J/°C)
0.048747 0.006487
0.043252
0.051703
0.107932
0.025253
0.023120
0.061163
0.092651
1.252250
Figure 25. Diode Transient Thermal Impedance
ON−PULSE WIDTH (s)
SQUARE−WAVE PEAK R(t) (°C/W)
50% Duty Cycle
20%
10%
5%
2%
Single Pulse
0.001
0.01
0.1
1RqJC = 0.50
Junction Case
C1C2
R1R2Rn
Duty Factor = t1/t2
Peak TJ = PDM x ZqJC + TC
Cn
10.10.010.00011E−06 1E−05 0.001
Ri (°C/W) Ci (J/°C)
0.007703 0.000130
0.010613
0.010097
0.032329
0.046791
0.044179
0.083870
0.044938
0.217376
0.000942
0.003132
0.003093
0.006758
0.022635
0.119232
0.703706
0.460033
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PACKAGE DIMENSIONS
TO−247
CASE 340AL
ISSUE A
E2
L1
D
L
b4
b2
b
E
0.25 MBA
M
cA1
A
123
B
e
2X
3X
0.635 MBA
M
A
S
P
SEATING
PLANE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. SLOT REQUIRED, NOTCH MAY BE ROUNDED.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH.
MOLD FLASH SHALL NOT EXCEED 0.13 PER SIDE. THESE
DIMENSIONS ARE MEASURED AT THE OUTERMOST
EXTREME OF THE PLASTIC BODY.
5. LEAD FINISH IS UNCONTROLLED IN THE REGION DEFINED BY
L1.
6. ∅P SHALL HAVE A MAXIMUM DRAFT ANGLE OF 1.5° TO THE
TOP OF THE PART WITH A MAXIMUM DIAMETER OF 3.91.
7. DIMENSION A1 TO BE MEASURED IN THE REGION DEFINED
BY L1.
DIM MIN MAX
MILLIMETERS
D20.30 21.40
E15.50 16.25
A4.70 5.30
b1.00 1.40
b2 1.65 2.35
e5.45 BSC
A1 2.20 2.60
c0.40 0.80
L19.80 20.80
Q5.40 6.20
E2 4.32 5.49
L1 3.50 4.50
P3.55 3.65
S6.15 BSC
b4 2.60 3.40
NOTE 6
4
NOTE 7
Q
NOTE 4
NOTE 3
NOTE 5
E2/2
NOTE 4
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