1/9April 2002
STP5NK65Z
N-CHANNEL 650V - 1.5 - 5A TO-220
Zener-Protected SuperMESH™Powe r MOSF ET
TYPICAL RDS(on) = 1.5
EXTREMELY HI GH dv /d t CAPABIL IT Y
IMPROVED ESD CAPABILITY
100% AVALANCHE RA TED
GATE CHARGE MINIMIZED
VERY LOW INT RIN SIC CAPAC ITA NCE S
VERY GOOD MANUFACTURING
REPEATIBILITY
DESCRIPTION
The SuperMESH™ series is obtained through an
extreme optimization of ST s we ll established strip-
based PowerMES H™ layout . In addition to pushing
on-resistance significantly down, special care is tak-
en to ensure a very good dv/dt capability for the
most dem anding applications. S uch series com pl e-
ments ST full range of high voltage MOSFETs in-
cluding revolutionary MDmesh™ products.
APPLICATIONS
HIGH CURRENT, HIGH SPEED SWITCHING
IDEAL F OR OF F-L IN E PO W ER SU PP L I ES,
ADAPTORS AND PFC
ORDERING INFORMATION
TYPE VDSS RDS(on) IDPw
STP5N K65Z 650 V < 1.8 5 A 85 W
SALES TYPE MARKING PACKAGE PACKAGING
STP5NK65Z P5NK65Z TO-220 TUBE
TO-220
INTERNAL SCHEMATIC DIAGRAM
Obsolete Product(s) - Obsolete Product(s)
Obsolete Product(s) - Obsolete Product(s)
STP5NK65Z
2/9
ABSOLUTE MAXIMUM RATINGS
(
l
) Pulse wi dth limi ted by saf e operating ar ea
(1) ISD 5A, di/dt 100 µA, VDD V(BR)DSS, Tj TJMAX.
(*) Limited only by maximum temperature allowed
THE RMAL D ATA
AVALANCHE CHARACTERISTICS
GATE-SOURCE ZENER DIODE
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to- back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to souce. In this r espect the Zener voltage is appropriate to achieve an efficient and cost-
effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage
of external component s.
Symbol Parameter Value Unit
VDS Drain-source Voltage (VGS = 0) 650 V
VDGR Drain-gate Voltage (RGS = 20 k)650 V
VGS Gate- sourc e Vol tage ± 30 V
IDDrain Current (continuous) at TC = 25°C 5A
I
D
Drain Current (continuous) at TC = 100°C 3.1 A
IDM (
l
)Drain Current (pulsed) 20 A
PTOT Total Dissipation at TC = 25°C 85 W
Derating Factor 0.6 W/°C
VESD(G-S) Gate source ESD(HBM-C=100pF, R=1.5KΩ) 2000 V
dv/dt (1) Peak Diode Recovery voltage slope 4.5 V/ns
Tj
Tstg Operating Junction Temperature
Storage Temperature -55 to 150
-55 to 150 °C
°C
Rthj-case Thermal Resistance Junction-case Max 1.64 °C/W
Rthj-amb Thermal Resistance Junction-ambient Max 50 °C/W
TlMaximum Lead Temperature For Soldering Purpose 300 °C
Symbol Paramet er Max Value Unit
IAR Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max) 4.2 A
EAS Single Pulse Avalanche Energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V) 190 mJ
Symbol Parameter Test Conditions Min. Typ. Max. Unit
BVGSO Gate-Source Breakdown
Voltage Igs=± 1mA (Open Drain) 30 V
Obsolete Product(s) - Obsolete Product(s)
3/9
STP5NK65Z
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
ON/OFF
DYNAMIC
SWITCHIN G ON
SWITCHIN G OFF
SOURCE DRA IN DIODE
Note: 1. Pul sed: Pul se dura tion = 300 µs, dut y c yc l e 1.5 %.
2. Pulse width l i m i ted by saf e operating ar ea.
3. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS i ncreases from 0 to 80%
VDSS.
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V(BR)DSS Drain-source
Breakdown Voltage ID = 1 mA, VGS = 0 650 V
IDSS Zero Gate Voltage
Drain Current (VGS = 0) VDS = Max Rating
VDS = Max Rating, TC = 125 °C 1
50 µA
µA
IGSS Gate-body Leakage
Current (VDS = 0) VGS = ± 20V ±10 µA
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 50µA 3 3.75 4.5 V
RDS(on) Static Drain-source On
Resistance VGS = 10V, ID = 2.1 A 1.5 1.8
Symbol Parameter Test Conditions Min. Typ. Max. Unit
gfs (1) Forward Transconductance VDS = 10 V, ID= 2.1 A 5 S
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
VDS = 25V, f = 1 MHz, VGS = 0 680
80
17
pF
pF
pF
Coss eq. (3) Equivalent Output
Capacitance VGS = 0V, VDS = 0V to 480 V 98 pF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
td(on)
trTurn-on Delay Time
Rise Time VDD = 325 V, ID = 2.1 A
RG= 4.7 VGS = 10 V
(Resistive Load see, Figure 3)
20
15 ns
ns
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD = 520V, ID = 4.2 A,
VGS = 10V 25
4.4
13.7
35 nC
nC
nC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
td(off)
tfTurn-off Delay Time
Fall Time VDD = 325 V, ID = 2.1 A
RG=4.7 VGS = 10 V
(Resistive Load see, Figure 3)
140
40 ns
ns
tr(Voff)
tf
tc
Off-voltage Rise Time
Fall Time
Cross -over Time
VDD = 520 V, ID = 4.2 A,
RG=4.7Ω, VGS = 10V
(Inductive Load see, Figure 5)
12
7
15
ns
ns
ns
Symbol Parameter Test Conditions Min. Typ. Max. Unit
ISD
ISDM (2) Source-drain Current
Source-drain Current (pulsed) 5
20 A
A
VSD (1) Forward On Voltage ISD = 5 A, VGS = 0 1.6 V
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 4.2 A, di/dt = 100A/µs
VDD = 100V, Tj = 150°C
(see test circuit, Figure 5)
375
1.76
10
ns
µC
A
Obsolete Product(s) - Obsolete Product(s)
STP5NK65Z
4/9
Safe Op erating Area The rm al Im p e dance
Transco nductan ce Static Drain-so urce On Resistance
Transfer Characteri stics
Output Characteri stics
Obsolete Product(s) - Obsolete Product(s)
5/9
STP5NK65Z
Gate Charge vs Gate-so urc e Voltage Capacitance Va riations
Normalized On Resistance vs Temp eratu re
Normalized BV DSS vs Temperature
Norma lized Gate Thresh ol d Voltage vs Temp .
Source-drain Diode Forward Characteristics
Obsolete Product(s) - Obsolete Product(s)
STP5NK65Z
6/9
Maximum Avalanche Energy vs Temperatu re
Obsolete Product(s) - Obsolete Product(s)
7/9
STP5NK65Z
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Tim es
Fig. 4: Gate Charge te st Circuit
Fig. 2: Unclam ped Induc tive WaveformFig. 1: Unclamped Induct ive Load Test Circuit
Fig. 3: Switching Times Test Circuit For
Resistive Load
Obsolete Product(s) - Obsolete Product(s)
STP5NK65Z
8/9
DIM. mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107
D1 1.27 0.050
E 0.49 0.70 0.019 0.027
F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067
G 4.95 5.15 0.194 0.203
G1 2.4 2.7 0.094 0.106
H2 10.0 10.40 0.393 0.409
L2 16.4 0.645
L4 13.0 14.0 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.2 6.6 0.244 0.260
L9 3.5 3.93 0.137 0.154
DIA. 3.75 3.85 0.147 0.151
L6
A
C
D
E
D1
F
G
L7
L2
Dia.
F1
L5
L4
H2
L9
F2
G1
TO-220 MECHANICAL DATA
P011C
Obsolete Product(s) - Obsolete Product(s)
9/9
STP5NK65Z
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsib ility for t he
consequences of use o f su ch informat ion nor for any infri ngement of pat ents or other rights of t hird pa rties w hich may result from
its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
prev iously suppli ed. STMi cro electro nics produ cts ar e not authorized for use as c ritical comp onents i n life support de vices or
systems without express written approval of STMicroelectronics.
© The ST logo is a registered trademark of STMicroelectronics
© 2002 STMicroelectronics - Printed in Italy - All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco
Singapore - Spain - Sweden - Switzerland - United Kingdom - United States.
© http://www.st.com