Obsolete Product(s) - Obsolete Product(s)
3/9
STP5NK65Z
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
ON/OFF
DYNAMIC
SWITCHIN G ON
SWITCHIN G OFF
SOURCE DRA IN DIODE
Note: 1. Pul sed: Pul se dura tion = 300 µs, dut y c yc l e 1.5 %.
2. Pulse width l i m i ted by saf e operating ar ea.
3. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS i ncreases from 0 to 80%
VDSS.
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V(BR)DSS Drain-source
Breakdown Voltage ID = 1 mA, VGS = 0 650 V
IDSS Zero Gate Voltage
Drain Current (VGS = 0) VDS = Max Rating
VDS = Max Rating, TC = 125 °C 1
50 µA
µA
IGSS Gate-body Leakage
Current (VDS = 0) VGS = ± 20V ±10 µA
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 50µA 3 3.75 4.5 V
RDS(on) Static Drain-source On
Resistance VGS = 10V, ID = 2.1 A 1.5 1.8 Ω
Symbol Parameter Test Conditions Min. Typ. Max. Unit
gfs (1) Forward Transconductance VDS = 10 V, ID= 2.1 A 5 S
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
VDS = 25V, f = 1 MHz, VGS = 0 680
80
17
pF
pF
pF
Coss eq. (3) Equivalent Output
Capacitance VGS = 0V, VDS = 0V to 480 V 98 pF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
td(on)
trTurn-on Delay Time
Rise Time VDD = 325 V, ID = 2.1 A
RG= 4.7Ω VGS = 10 V
(Resistive Load see, Figure 3)
20
15 ns
ns
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD = 520V, ID = 4.2 A,
VGS = 10V 25
4.4
13.7
35 nC
nC
nC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
td(off)
tfTurn-off Delay Time
Fall Time VDD = 325 V, ID = 2.1 A
RG=4.7Ω VGS = 10 V
(Resistive Load see, Figure 3)
140
40 ns
ns
tr(Voff)
tf
tc
Off-voltage Rise Time
Fall Time
Cross -over Time
VDD = 520 V, ID = 4.2 A,
RG=4.7Ω, VGS = 10V
(Inductive Load see, Figure 5)
12
7
15
ns
ns
ns
Symbol Parameter Test Conditions Min. Typ. Max. Unit
ISD
ISDM (2) Source-drain Current
Source-drain Current (pulsed) 5
20 A
A
VSD (1) Forward On Voltage ISD = 5 A, VGS = 0 1.6 V
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 4.2 A, di/dt = 100A/µs
VDD = 100V, Tj = 150°C
(see test circuit, Figure 5)
375
1.76
10
ns
µC
A