PNP SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 1 MARCH 94
FEATURES
* 80 Volt VCEO
* Gain of 100 at IC = 350 mA
*P
tot=1 Watt
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage VCBO -100 V
Collector-Emitter Voltage VCEO -80 V
Emitter-Base Voltage VEBO -5 V
Peak Pulse Current ICM -2 A
Continuous Collector Current IC-1 A
Power Dissipation at Tamb
= 25°C Ptot 1W
Operating and Storage Temperature Range Tj:Tstg -55 to +200 °C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO -100 V IC=-100µA, IE=0
Collector-Emitter
Breakdown Voltage
V(BR)CEO -80 V IC=-10mA, IB=0*
Emitter-Base
Breakdown Voltage
V(BR)EBO -5 V IE=-1mA, IC=0
Collector Cut-Off
Current
ICBO -0.1 µAVCB
=-80V, IE=0
Emitter Cut-Off Current IEBO -10 µAVEB
=-5V, IC=0
Collector-Emitter
Saturation Voltage
VCE(sat) -0.35 V IC=-350mA, IB=-35mA*
Base-Emitter Turn-On
Voltage
VBE(on) -1.0 V IC=-350mA, VCE
=-2V*
Static Forward Current
Transfer Ratio
hFE 100
100 300
IC=-10mA, VCE
=-2V*
IC=-350mA, VCE
=-2V*
Transition
Frequency
fT50 500 MHz IC=-200mA, VCE
=-5V
f=20MHz
Collector-Base
Capacitance
CCB 20 pF VCB
=-10V, f=1MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
E-Line
TO92 Compatible
2N6732
3-11
C
B
E
