DDR2 SDRAM
MT47H128M4 – 32 Meg x 4 x 4 banks
MT47H64M8 – 16 Meg x 8 x 4 banks
MT47H32M16 – 8 Meg x 16 x 4 banks
Features
•Vdd = +1.8V ±0.1V, VddQ = +1.8V ±0.1V
•JEDEC-standard 1.8V I/O (SSTL_18-compatible)
•Differential data strobe (DQS, DQS#) option
•4n-bit prefetch architecture
•Duplicate output strobe (RDQS) option for x8
•DLL to align DQ and DQS transitions with CK
•4 internal banks for concurrent operation
•Programmable CAS latency (CL)
•Posted CAS additive latency (AL)
•WRITE latency = READ latency - 1 tCK
•Selectable burst lengths: 4 or 8
•Adjustable data-output drive strength
•64ms, 8,192-cycle refresh
•On-die termination (ODT)
•Industrial temperature (IT) option
•Automotive temperature (AT) option
•RoHS compliant
•Supports JEDEC clock jitter specification
Options1Marking
•Configuration
–256 Meg x 4 (32 Meg x 4 x 4 banks) 128M4
–128 Meg x 8 (16 Meg x 8 x 4 banks) 64M8
–64 Meg x 16 (8 Meg x 16 x 4 banks) 32M16
•FBGA package (Pb-free) – x16
–84-ball FBGA (12mm x 12.5mm) Rev. B CC
–84-ball FBGA (10mm x 12.5mm) Rev. D BN
–84-ball FBGA (8mm x 12.5mm) Rev. F HR
•FBGA package (Pb-free) – x4, x8
–60-ball FBGA (12mm x 10mm) Rev. B CB
–60-ball FBGA (10mm x 10mm) Rev. D B6
–60-ball FBGA (8mm x 10mm) Rev. F CF
•FBGA package (lead solder) – x16
–84-ball FBGA (12mm x 12.5mm) Rev. B GC
–84-ball FBGA (10mm x 12.5mm) Rev. D FN
–84-ball FBGA (8mm x 12.5mm) Rev. F HW
•FBGA package (lead solder) – x4, x8
–60-ball FBGA (12mm x 10mm) Rev. B GB
–60-ball FBGA (10mm x 10mm) Rev. D F6
–60-ball FBGA (8mm x 10mm) Rev. F JN
•Timing – cycle time
–2.5ns @ CL = 5 (DDR2-800) -25E
–2.5ns @ CL = 6 (DDR2-800) -25
–3.0ns @ CL = 4 (DDR2-667) -3E
–3.0ns @ CL = 5 (DDR2-667) -3
–3.75ns @ CL = 4 (DDR2-533) -37E
•Self refresh
–Standard None
–Low-power L
•Operating temperature
–Commercial (0°C ≤ TC ≤ 85°C) None
–Industrial (–40°C ≤ TC ≤ 95°C;
–40°C ≤ TA ≤ 85°C)
IT
–Automotive, Revision :D only
(–40°C ≤ TC, TA ≤ 105°C)
AT
•Revision :B/:D/:F
Note: 1. Not all options listed can be combined to
define an offered product. Use the Part
Catalog Search on www.micron.com for
product offerings and availability.
512Mb: x4, x8, x16 DDR2 SDRAM
Features
PDF: 09005aef82f1e6e2
Rev. N 1/09 EN 1Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2004 Micron Technology, Inc. All rights reserved.
Products and specifications discussed herein are subject to change by Micron without notice.
Table 1: Key Timing Parameters
Speed Grade Data Rate (MT/s) tRC (ns)
CL = 3 CL = 4 CL = 5 CL = 6
-25E 400 533 800 800 55
-25 400 533 667 800 55
-3E 400 667 667 n/a 54
-3 400 533 667 n/a 55
-37E 400 533 n/a n/a 55
Table 2: Addressing
Parameter 128 Meg x 4 64 Meg x 8 32 Meg x 16
Configuration 32 Meg x 4 x 4 banks 16 Meg x 8 x 4 banks 8 Meg x 16 x 4 banks
Refresh count 8K 8K 8K
Row address A[13:0] (16K) A[13:0] (16K) A[12:0] (8K)
Bank address BA[1:0] (4) BA[1:0] (4) BA[1:0] (4)
Column address A[11, 9:0] (2K) A[9:0] (1K) A[9:0] (1K)
512Mb: x4, x8, x16 DDR2 SDRAM
Features
PDF: 09005aef82f1e6e2
Rev. N 1/09 EN 2Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2004 Micron Technology, Inc. All rights reserved.
Figure 1: 512Mb DDR2 Part Numbers
Example Part Number: MT47H128M4B6-25E :D
Configuration
256 Meg x 4
128 Meg x 8
64 Meg x 16
128M4
64M8
32M16
Speed Grade
tCK = 3.75ns, CL = 4
tCK = 3ns, CL = 5
tCK = 3ns, CL = 4
tCK = 2.5ns, CL = 6
tCK = 2.5ns, CL = 5
-37E
-3
-3E
-25
-25E
-
ConfigurationMT47H Package Speed
Revision
:
{
Package
Pb-free
84-ball 12mm x 12.5mm FBGA
84-ball 10mm x 12.5mm FBGA
84-ball 8mm x 12.5mm FBGA
60-ball 12mm x 10mm FBGA
60-ball 10mm x 10mm FBGA
60-ball 8mm x 10mm FBGA
Lead Solder
84-ball 12mm x 12.5mm FBGA
84-ball 10mm x 12.5mm FBGA
84-ball 8mm x 12.5mm FBGA
60-ball 12mm x 10mm FBGA
60-ball 10mm x 10mm FBGA
60-ball 8mm x 10mm FBGA
CC
BN
HR
CB
B6
CF
GC
FN
HW
GB
F6
JN
Low power
Industrial temperature
Automotive temperature
L
IT
AT
Revision
:B/:D/:F
Note: 1. Not all speeds and configurations are available in all packages.
FBGA Part Number System
Due to space limitations, FBGA-packaged components have an abbreviated part marking that is different from the
part number. For a quick conversion of an FBGA code, see the FBGA Part Marking Decoder on Micron’s Web site:
http://www.micron.com.
512Mb: x4, x8, x16 DDR2 SDRAM
Features
PDF: 09005aef82f1e6e2
Rev. N 1/09 EN 3Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2004 Micron Technology, Inc. All rights reserved.
Contents
State Diagram .................................................................................................................................................. 9
Functional Description ................................................................................................................................... 10
Industrial Temperature .............................................................................................................................. 10
Automotive Temperature ........................................................................................................................... 11
General Notes ............................................................................................................................................ 11
Functional Block Diagrams ............................................................................................................................. 12
Ball Assignments and Descriptions ................................................................................................................. 15
Packaging ...................................................................................................................................................... 20
Package Dimensions .................................................................................................................................. 20
FBGA Package Capacitance ......................................................................................................................... 26
Electrical Specifications – Absolute Ratings ..................................................................................................... 27
Temperature and Thermal Impedance ........................................................................................................ 27
Electrical Specifications – Idd Parameters ........................................................................................................ 30
Idd Specifications and Conditions ............................................................................................................... 30
Idd7 Conditions ......................................................................................................................................... 31
AC Timing Operating Specifications ................................................................................................................ 35
AC and DC Operating Conditions .................................................................................................................... 46
ODT DC Electrical Characteristics ................................................................................................................... 47
Input Electrical Characteristics and Operating Conditions ............................................................................... 48
Output Electrical Characteristics and Operating Conditions ............................................................................. 51
Output Driver Characteristics ......................................................................................................................... 53
Power and Ground Clamp Characteristics ....................................................................................................... 57
AC Overshoot/Undershoot Specification ......................................................................................................... 58
Input Slew Rate Derating ................................................................................................................................ 60
Commands .................................................................................................................................................... 74
Truth Tables ............................................................................................................................................... 74
DESELECT ................................................................................................................................................. 78
NO OPERATION (NOP) .............................................................................................................................. 79
LOAD MODE (LM) ..................................................................................................................................... 79
ACTIVATE .................................................................................................................................................. 79
READ ......................................................................................................................................................... 79
WRITE ....................................................................................................................................................... 79
PRECHARGE .............................................................................................................................................. 80
REFRESH ................................................................................................................................................... 80
SELF REFRESH ........................................................................................................................................... 80
Mode Register (MR) ........................................................................................................................................ 80
Burst Length .............................................................................................................................................. 81
Burst Type ................................................................................................................................................. 81
Operating Mode ......................................................................................................................................... 83
DLL RESET ................................................................................................................................................. 83
Write Recovery ........................................................................................................................................... 84
Power-Down Mode .................................................................................................................................... 84
CAS Latency (CL) ........................................................................................................................................ 85
Extended Mode Register (EMR) ....................................................................................................................... 86
DLL Enable/Disable ................................................................................................................................... 87
Output Drive Strength ................................................................................................................................ 87
DQS# Enable/Disable ................................................................................................................................. 87
RDQS Enable/Disable ................................................................................................................................. 87
Output Enable/Disable ............................................................................................................................... 87
On-Die Termination (ODT) ........................................................................................................................ 88
512Mb: x4, x8, x16 DDR2 SDRAM
PDF: 09005aef82f1e6e2
Rev. N 1/09 EN 4Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2004 Micron Technology, Inc. All rights reserved.
Off-Chip Driver (OCD) Impedance Calibration ............................................................................................ 88
Posted CAS Additive Latency (AL) ............................................................................................................... 88
Extended Mode Register 2 (EMR2) .................................................................................................................. 90
Extended Mode Register 3 (EMR3) .................................................................................................................. 91
Initialization .................................................................................................................................................. 92
ACTIVATE ...................................................................................................................................................... 96
READ ............................................................................................................................................................. 98
READ with Precharge ................................................................................................................................ 102
READ with Auto Precharge ......................................................................................................................... 104
WRITE .......................................................................................................................................................... 109
PRECHARGE ................................................................................................................................................. 119
REFRESH ...................................................................................................................................................... 120
SELF REFRESH .............................................................................................................................................. 121
Power-Down Mode ....................................................................................................................................... 123
Precharge Power-Down Clock Frequency Change .......................................................................................... 130
Reset ............................................................................................................................................................. 131
CKE Low Anytime ...................................................................................................................................... 131
ODT Timing .................................................................................................................................................. 133
MRS Command to ODT Update Delay ........................................................................................................ 135
512Mb: x4, x8, x16 DDR2 SDRAM
PDF: 09005aef82f1e6e2
Rev. N 1/09 EN 5Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2004 Micron Technology, Inc. All rights reserved.
List of Tables
Table 1: Key Timing Parameters ...................................................................................................................... 2
Table 2: Addressing ......................................................................................................................................... 2
Table 3: FBGA 84-Ball – x16 and 60-Ball – x4, x8 Descriptions .......................................................................... 17
Table 4: Input Capacitance ............................................................................................................................ 26
Table 5: Absolute Maximum DC Ratings ........................................................................................................ 27
Table 6: Temperature Limits .......................................................................................................................... 28
Table 7: Thermal Impedance ......................................................................................................................... 29
Table 8: General Idd Parameters .................................................................................................................... 30
Table 9: Idd7 Timing Patterns (4-Bank Interleave READ Operation) ................................................................ 31
Table 10: DDR2 Idd Specifications and Conditions ........................................................................................ 32
Table 11: AC Operating Specifications and Conditions .................................................................................... 35
Table 12: Recommended DC Operating Conditions (SSTL_18) ........................................................................ 46
Table 13: ODT DC Electrical Characteristics ................................................................................................... 47
Table 14: Input DC Logic Levels ..................................................................................................................... 48
Table 15: Input AC Logic Levels ..................................................................................................................... 48
Table 16: Differential Input Logic Levels ........................................................................................................ 49
Table 17: Differential AC Output Parameters .................................................................................................. 51
Table 18: Output DC Current Drive ................................................................................................................ 51
Table 19: Output Characteristics .................................................................................................................... 52
Table 20: Full Strength Pull-Down Current (mA) ............................................................................................ 53
Table 21: Full Strength Pull-Up Current (mA) ................................................................................................. 54
Table 22: Reduced Strength Pull-Down Current (mA) ..................................................................................... 55
Table 23: Reduced Strength Pull-Up Current (mA) .......................................................................................... 56
Table 24: Input Clamp Characteristics ........................................................................................................... 57
Table 25: Address and Control Balls ............................................................................................................... 58
Table 26: Clock, Data, Strobe, and Mask Balls ................................................................................................. 58
Table 27: AC Input Test Conditions ................................................................................................................ 59
Table 28: DDR2-400/533 Setup and Hold Time Derating Values (tIS and tIH) ................................................... 61
Table 29: DDR2-667/800/1066 Setup and Hold Time Derating Values (tIS and tIH) .......................................... 62
Table 30: DDR2-400/533 tDS, tDH Derating Values with Differential Strobe ..................................................... 65
Table 31: DDR2-667/800/1066 tDS, tDH Derating Values with Differential Strobe ............................................ 67
Table 32: Single-Ended DQS Slew Rate Derating Values Using tDSb and tDHb .................................................. 68
Table 33: Single-Ended DQS Slew Rate Fully Derated (DQS, DQ at Vref) at DDR2-667 ...................................... 68
Table 34: Single-Ended DQS Slew Rate Fully Derated (DQS, DQ at Vref) at DDR2-533 ...................................... 69
Table 35: Single-Ended DQS Slew Rate Fully Derated (DQS, DQ at Vref) at DDR2-400 ...................................... 69
Table 36: Truth Table – DDR2 Commands ..................................................................................................... 74
Table 37: Truth Table – Current State Bank n – Command to Bank n ............................................................... 75
Table 38: Truth Table – Current State Bank n – Command to Bank m .............................................................. 77
Table 39: Minimum Delay with Auto Precharge Enabled ................................................................................. 78
Table 40: Burst Definition .............................................................................................................................. 83
Table 41: READ Using Concurrent Auto Precharge ........................................................................................ 104
Table 42: WRITE Using Concurrent Auto Precharge ....................................................................................... 110
Table 43: Truth Table – CKE ......................................................................................................................... 125
512Mb: x4, x8, x16 DDR2 SDRAM
PDF: 09005aef82f1e6e2
Rev. N 1/09 EN 6Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2004 Micron Technology, Inc. All rights reserved.
List of Figures
Figure 1: 512Mb DDR2 Part Numbers .............................................................................................................. 3
Figure 2: Simplified State Diagram ................................................................................................................... 9
Figure 3: 128 Meg x 4 Functional Block Diagram ............................................................................................. 12
Figure 4: 64 Meg x 8 Functional Block Diagram .............................................................................................. 13
Figure 5: 32 Meg x 16 Functional Block Diagram ............................................................................................. 14
Figure 6: 60-Ball FBGA – x4, x8 Ball Assignments (Top View) ........................................................................... 15
Figure 7: 84-Ball FBGA – x16 Ball Assignments (Top View) .............................................................................. 16
Figure 8: 84-Ball FBGA (12mm x 12.5mm) – x16 .............................................................................................. 20
Figure 9: 84-Ball FBGA (10mm x 12.5mm) – x16 .............................................................................................. 21
Figure 10: 84-Ball FBGA (8mm x 12.5mm) – x16 .............................................................................................. 22
Figure 11: 60-Ball FBGA (12mm x 10mm) – x4, x8 ............................................................................................ 23
Figure 12: 60-Ball FBGA (10mm x 10mm) – x4, x8 ............................................................................................ 24
Figure 13: 60-Ball FBGA (8mm x 10mm) – x4, x8 ............................................................................................. 25
Figure 14: Example Temperature Test Point Location ..................................................................................... 28
Figure 15: Single-Ended Input Signal Levels ................................................................................................... 48
Figure 16: Differential Input Signal Levels ...................................................................................................... 49
Figure 17: Differential Output Signal Levels .................................................................................................... 51
Figure 18: Output Slew Rate Load .................................................................................................................. 52
Figure 19: Full Strength Pull-Down Characteristics ......................................................................................... 53
Figure 20: Full Strength Pull-Up Characteristics ............................................................................................. 54
Figure 21: Reduced Strength Pull-Down Characteristics ................................................................................. 55
Figure 22: Reduced Strength Pull-Up Characteristics ...................................................................................... 56
Figure 23: Input Clamp Characteristics .......................................................................................................... 57
Figure 24: Overshoot ..................................................................................................................................... 58
Figure 25: Undershoot .................................................................................................................................. 58
Figure 26: Nominal Slew Rate for tIS .............................................................................................................. 63
Figure 27: Tangent Line for tIS ....................................................................................................................... 63
Figure 28: Nominal Slew Rate for tIH .............................................................................................................. 64
Figure 29: Tangent Line for tIH ...................................................................................................................... 65
Figure 30: Nominal Slew Rate for tDS ............................................................................................................. 70
Figure 31: Tangent Line for tDS ...................................................................................................................... 70
Figure 32: Nominal Slew Rate for tDH ............................................................................................................ 71
Figure 33: Tangent Line for tDH ..................................................................................................................... 71
Figure 34: AC Input Test Signal Waveform Command/Address Balls ............................................................... 72
Figure 35: AC Input Test Signal Waveform for Data with DQS, DQS# (Differential) ........................................... 72
Figure 36: AC Input Test Signal Waveform for Data with DQS (Single-Ended) .................................................. 73
Figure 37: AC Input Test Signal Waveform (Differential) ................................................................................. 73
Figure 38: MR Definition ............................................................................................................................... 81
Figure 39: CL ................................................................................................................................................ 85
Figure 40: EMR Definition ............................................................................................................................. 86
Figure 41: READ Latency ............................................................................................................................... 89
Figure 42: WRITE Latency ............................................................................................................................. 89
Figure 43: EMR2 Definition ........................................................................................................................... 90
Figure 44: EMR3 Definition ........................................................................................................................... 91
Figure 45: DDR2 Power-Up and Initialization ................................................................................................. 93
Figure 46: Example: Meeting tRRD (MIN) and tRCD (MIN) .............................................................................. 96
Figure 47: Multibank Activate Restriction ....................................................................................................... 97
Figure 48: READ Latency ............................................................................................................................... 99
Figure 49: Consecutive READ Bursts ............................................................................................................. 100
Figure 50: Nonconsecutive READ Bursts ....................................................................................................... 101
512Mb: x4, x8, x16 DDR2 SDRAM
PDF: 09005aef82f1e6e2
Rev. N 1/09 EN 7Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2004 Micron Technology, Inc. All rights reserved.
Figure 51: READ Interrupted by READ .......................................................................................................... 102
Figure 52: READ-to-WRITE ........................................................................................................................... 102
Figure 53: READ-to-PRECHARGE – BL = 4 ..................................................................................................... 103
Figure 54: READ-to-PRECHARGE – BL = 8 ..................................................................................................... 103
Figure 55: Bank Read – Without Auto Precharge ............................................................................................ 105
Figure 56: Bank Read – with Auto Precharge .................................................................................................. 106
Figure 57: x4, x8 Data Output Timing – tDQSQ, tQH, and Data Valid Window ................................................. 107
Figure 58: x16 Data Output Timing – tDQSQ, tQH, and Data Valid Window ..................................................... 108
Figure 59: Data Output Timing – tAC and tDQSCK ......................................................................................... 109
Figure 60: Write Burst ................................................................................................................................... 111
Figure 61: Consecutive WRITE-to-WRITE ...................................................................................................... 112
Figure 62: Nonconsecutive WRITE-to-WRITE ................................................................................................ 112
Figure 63: WRITE Interrupted by WRITE ....................................................................................................... 113
Figure 64: WRITE-to-READ ........................................................................................................................... 114
Figure 65: WRITE-to-PRECHARGE ................................................................................................................ 115
Figure 66: Bank Write – Without Auto Precharge ............................................................................................ 116
Figure 67: Bank Write – with Auto Precharge ................................................................................................. 117
Figure 68: WRITE – DM Operation ................................................................................................................ 118
Figure 69: Data Input Timing ........................................................................................................................ 119
Figure 70: Refresh Mode ............................................................................................................................... 120
Figure 71: Self Refresh .................................................................................................................................. 122
Figure 72: Power-Down ................................................................................................................................ 124
Figure 73: READ-to-Power-Down or Self Refresh Entry .................................................................................. 126
Figure 74: READ with Auto Precharge-to-Power-Down or Self Refresh Entry .................................................. 126
Figure 75: WRITE-to-Power-Down or Self Refresh Entry ................................................................................ 127
Figure 76: WRITE with Auto Precharge-to-Power-Down or Self Refresh Entry ................................................. 127
Figure 77: REFRESH Command-to-Power-Down Entry ................................................................................. 128
Figure 78: ACTIVATE Command-to-Power-Down Entry ................................................................................ 128
Figure 79: PRECHARGE Command-to-Power-Down Entry ............................................................................ 129
Figure 80: LOAD MODE Command-to-Power-Down Entry ............................................................................ 129
Figure 81: Input Clock Frequency Change During Precharge Power-Down Mode ........................................... 130
Figure 82: RESET Function ........................................................................................................................... 132
Figure 83: ODT Timing for Entering and Exiting Power-Down Mode .............................................................. 134
Figure 84: Timing for MRS Command to ODT Update Delay .......................................................................... 135
Figure 85: ODT Timing for Active or Fast-Exit Power-Down Mode ................................................................. 135
Figure 86: ODT Timing for Slow-Exit or Precharge Power-Down Modes ......................................................... 136
Figure 87: ODT Turn-Off Timings When Entering Power-Down Mode ............................................................ 136
Figure 88: ODT Turn-On Timing When Entering Power-Down Mode ............................................................. 137
Figure 89: ODT Turn-Off Timing When Exiting Power-Down Mode ............................................................... 138
Figure 90: ODT Turn-On Timing When Exiting Power-Down Mode ................................................................ 139
512Mb: x4, x8, x16 DDR2 SDRAM
PDF: 09005aef82f1e6e2
Rev. N 1/09 EN 8Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2004 Micron Technology, Inc. All rights reserved.
State Diagram
Figure 2: Simplified State Diagram
Automatic Sequence
Command Sequence
PRE
Initialization
sequence
Self
refreshing
CKE_L
Refreshing
Precharge
power-
down
Setting
MRS
EMRS
SR
CKE_H
REFRESH
Idle
all banks
precharged
CKE_L
CKE_L
CKE_L
(E)MRS
OCD
default
Activating
ACT
Bank
active
Reading
READ
Writing
WRITE
Active
power-
down
CKE_L
CKE_L
CKE_H
CKE_L
Writing
with
auto
precharge
Reading
with
auto
precharge
READ A
WRITE A
PRE, PRE_A
WRITE A
WRITE A
READ A
PRE , PRE_A
READ A
READ
WRITE
Precharging
CKE_H
WRITE READ
PRE, PRE_A
ACT = ACTIVATE
CKE_H = CKE HIGH, exit power-down or self refresh
CKE_L = CKE LOW, enter power-down
(E)MRS = (Extended) mode register set
PRE = PRECHARGE
PRE_A = PRECHARGE ALL
READ = READ
READ A = READ with auto precharge
REFRESH = REFRESH
SR = SELF REFRESH
WRITE = WRITE
WRITE A = WRITE with auto precharge
Note: 1. This diagram provides the basic command flow. It is not comprehensive and does not
identify all timing requirements or possible command restrictions such as multibank in-
teraction, power down, entry/exit, etc.
512Mb: x4, x8, x16 DDR2 SDRAM
State Diagram
PDF: 09005aef82f1e6e2
Rev. N 1/09 EN 9Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2004 Micron Technology, Inc. All rights reserved.
Functional Description
The DDR2 SDRAM uses a double data rate architecture to achieve high-speed opera-
tion. The double data rate architecture is essentially a 4n-prefetch architecture, with an
interface designed to transfer two data words per clock cycle at the I/O balls. A single
read or write access for the DDR2 SDRAM effectively consists of a single 4n-bit-wide, one-
clock-cycle data transfer at the internal DRAM core and four corresponding n-bit-wide,
one-half-clock-cycle data transfers at the I/O balls.
A bidirectional data strobe (DQS, DQS#) is transmitted externally, along with data, for
use in data capture at the receiver. DQS is a strobe transmitted by the DDR2 SDRAM
during READs and by the memory controller during WRITEs. DQS is edge-aligned with
data for READs and center-aligned with data for WRITEs. The x16 offering has two data
strobes, one for the lower byte (LDQS, LDQS#) and one for the upper byte (UDQS, UDQS#).
The DDR2 SDRAM operates from a differential clock (CK and CK#); the crossing of CK
going HIGH and CK# going LOW will be referred to as the positive edge of CK. Com-
mands (address and control signals) are registered at every positive edge of CK. Input
data is registered on both edges of DQS, and output data is referenced to both edges of
DQS as well as to both edges of CK.
Read and write accesses to the DDR2 SDRAM are burst-oriented; accesses start at a se-
lected location and continue for a programmed number of locations in a programmed
sequence. Accesses begin with the registration of an ACTIVATE command, which is
then followed by a READ or WRITE command. The address bits registered coincident
with the ACTIVATE command are used to select the bank and row to be accessed. The
address bits registered coincident with the READ or WRITE command are used to select
the bank and the starting column location for the burst access.
The DDR2 SDRAM provides for programmable read or write burst lengths of four or
eight locations. DDR2 SDRAM supports interrupting a burst read of eight with another
read or a burst write of eight with another write. An auto precharge function may be
enabled to provide a self-timed row precharge that is initiated at the end of the burst
access.
As with standard DDR SDRAM, the pipelined, multibank architecture of DDR2 SDRAM
enables concurrent operation, thereby providing high, effective bandwidth by hiding
row precharge and activation time.
A self refresh mode is provided, along with a power-saving, power-down mode.
All inputs are compatible with the JEDEC standard for SSTL_18. All full drive-strength
outputs are SSTL_18-compatible.
Industrial Temperature
The industrial temperature (IT) option, if offered, has two simultaneous requirements:
ambient temperature surrounding the device cannot be less than –40°C or greater than
+85°C, and the case temperature cannot be less than –40°C or greater than +95°C. JE-
DEC specifications require the refresh rate to double when TC exceeds +85°C; this also
requires use of the high-temperature self refresh option. Additionally, ODT resistance
and the input/output impedance must be derated when TC is < 0°C or > +85°C.
512Mb: x4, x8, x16 DDR2 SDRAM
Functional Description
PDF: 09005aef82f1e6e2
Rev. N 1/09 EN 10 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2004 Micron Technology, Inc. All rights reserved.
Automotive Temperature
The automotive temperature (AT) option, if offered, has two simultaneous require-
ments: ambient temperature surrounding the device cannot be less than –40°C or
greater than +105°C, and the case temperature cannot be less than –40°C or greater
than +105°C. JEDEC specifications require the refresh rate to double when TC exceeds
+85°C; this also requires use of the high-temperature self refresh option. Additionally,
ODT resistance and the input/output impedance must be derated when TC is < 0°C or >
+85°C.
General Notes
•The functionality and the timing specifications discussed in this data sheet are for the
DLL-enabled mode of operation.
•Throughout the data sheet, the various figures and text refer to DQs as “DQ.” The DQ
term is to be interpreted as any and all DQ collectively, unless specifically stated oth-
erwise. Additionally, the x16 is divided into 2 bytes: the lower byte and the upper byte.
For the lower byte (DQ0–DQ7), DM refers to LDM and DQS refers to LDQS. For the
upper byte (DQ8–DQ15), DM refers to UDM and DQS refers to UDQS.
•Complete functionality is described throughout the document, and any page or dia-
gram may have been simplified to convey a topic and may not be inclusive of all
requirements.
•Any specific requirement takes precedence over a general statement.
512Mb: x4, x8, x16 DDR2 SDRAM
Functional Description
PDF: 09005aef82f1e6e2
Rev. N 1/09 EN 11 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2004 Micron Technology, Inc. All rights reserved.
Functional Block Diagrams
The DDR2 SDRAM is a high-speed CMOS, dynamic random access memory. It is inter-
nally configured as a multibank DRAM.
Figure 3: 128 Meg x 4 Functional Block Diagram
14
Row-
address
MUX
Control
logic
Column-
address
counter/
latch
Mode
registers
11
Command
decode
A0–A13,
BA0, BA1
14
Address
register
16
512
(x16)
8,192
I/O gating
DM mask logic
Column
decoder
Bank0
Memory
array
(16,384 x 512 x 16)
Bank0
row-
address
latch and
decoder
16,384
Sense amplifiers
Bank
control
logic
16
Bank1
Bank2
Bank3
14
9
2
2
Refresh
counter
4
44
2
RCVRS
16
16
16
CK out
Data
DQS, DQS#
internal
CK, CK#
CK, CK#
COL0, COL1
COL0, COL1
CK in
DRVRS
DLL
MUX
DQS
generator
4
4
4
4
4
DQ0–DQ3
DQS, DQS#
2
Read
latch
Write
FIFO
and
drivers
Data
4
4
4
4
16
1
1
1
1
Mask
1
1
1
11
4
4
4
2
Bank1
Bank2
Bank3
Input
registers
DM
RAS#
CAS#
CK
CS#
WE#
CK#
CKE
ODT
VddQ
R1
R1
R2
R2
sw1 sw2
VssQ
sw1 sw2
ODT control
sw3
R3
R3
sw3
R1
R1
R2
R2
sw1 sw2
R3
R3
sw3
R1
R1
R2
R2
sw1 sw2
R3
R3
sw3
512Mb: x4, x8, x16 DDR2 SDRAM
Functional Block Diagrams
PDF: 09005aef82f1e6e2
Rev. N 1/09 EN 12 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2004 Micron Technology, Inc. All rights reserved.
Figure 4: 64 Meg x 8 Functional Block Diagram
14
Row-
address
MUX
Control
logic
Column-
address
counter/
latch
Mode
registers
10
Command
decode
A0–A13,
BA0, BA1
14
Address
register
16
256
(x32)
8,192
I/O gating
DM mask logic
Column
decoder
Bank 0
Memory
array
(16,384 x 256 x 32)
Bank 0
row-
address
latch and
decoder
16,384
Sense amplifiers
Bank
control
logic
16
Bank 1
Bank 2
Bank 3
14
8
2
2
Refresh
counter
8
88
2
RCVRS
32
32
32
CK out
Data
DQS, DQS#
internal
CK, CK#
CK, CK#
COL0, COL1
COL0, COL1
CK in
DRVRS
DLL
MUX
DQS
generator
8
8
8
8
8
DQ0–DQ7
DQS, DQS#
2
Read
latch
Write
FIFO
and
drivers
Data
8
8
8
8
32
1
1
1
1
Mask
1
1
1
11
4
8
8
2
Bank 1
Bank 2
Bank 3
Input
registers
DM
RDQS#
RAS#
CAS#
CK
CS#
WE#
CK#
CKE
ODT
RDQS
VddQ
R1
R1
R2
R2
sw1 sw2
VssQ
sw1 sw2
ODT control
sw3
R3
R3
sw3
R1
R1
R2
R2
sw1 sw2
R3
R3
sw3
R1
R1
R2
R2
sw1 sw2
R3
R3
sw3
512Mb: x4, x8, x16 DDR2 SDRAM
Functional Block Diagrams
PDF: 09005aef82f1e6e2
Rev. N 1/09 EN 13 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2004 Micron Technology, Inc. All rights reserved.
Figure 5: 32 Meg x 16 Functional Block Diagram
13
Row-
address
MUX
Control
Logic
Column-
address
counter/
latch
Mode
registers
10
A0–A12,
BA0, BA1
13
Address
register
15
256
(x64)
16,384
I/O gating
DM mask logic
Column
decoder
Bank 0
Memory
array
(8,192 x 256 x 64)
Bank 0
row-
Address
latch and
decoder
8,192
Sense amplifiers
Bank
control
logic
15
Bank 1
Bank 2
Bank 3
13
8
2
2
Refresh
counter
16
16
16
4
64
64
64
CK out
Data
UDQS, UDQS#
LDQS, LDQS#
Internal
CK, CK#
CK, CK#
COL0, COL1
COL0, COL1
CK in
DLL
MUX
DQS
generator
16
16
16
16
16
UDQS, UDQS#
LDQS, LDQS#
4
Read
latch
Write
FIFO
and
drivers
Data
16
16
16
16
64
2
2
2
2
Mask
2
2
2
2
2
8
16
16
2
Bank 1
Bank 2
Bank 3
Input
registers
UDM, LDM
DQ0–DQ15
RAS#
CAS#
CK
CS#
WE#
CK#
Command
decode
CKE
ODT
DRVRS
RCVRS
VddQ
R1
R1
R2
R2
sw1 sw2
VssQ
sw1 sw2
ODT control
sw3
R3
R3
sw3
R1
R1
R2
R2
sw1 sw2
R3
R3
sw3
R1
R1
R2
R2
sw1 sw2
R3
R3
sw3
512Mb: x4, x8, x16 DDR2 SDRAM
Functional Block Diagrams
PDF: 09005aef82f1e6e2
Rev. N 1/09 EN 14 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2004 Micron Technology, Inc. All rights reserved.
Ball Assignments and Descriptions
Figure 6: 60-Ball FBGA – x4, x8 Ball Assignments (Top View)
1 2 3 4 6 7 8 95
Vdd
NF, DQ6
VddQ
NF, DQ4
VddL
RFU
Vss
Vdd
NF, RDQS#/NU
VssQ
DQ1
VssQ
Vref
CKE
BA0
A10
A3
A7
A12
Vss
DM, DM/RDQS
VddQ
DQ3
Vss
WE#
BA1
A1
A5
A9
RFU
VssQ
DQS
VddQ
DQ2
VssDL
RAS#
CAS#
A2
A6
A11
RFU
VddQ
NF, DQ7
VddQ
NF, DQ5
Vdd
ODT
Vdd
Vss
DQS#/NU
VssQ
DQ0
VssQ
CK
CK#
CS#
A0
A4
A8
A13
A
B
C
D
E
F
G
H
J
K
L
512Mb: x4, x8, x16 DDR2 SDRAM
Ball Assignments and Descriptions
PDF: 09005aef82f1e6e2
Rev. N 1/09 EN 15 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2004 Micron Technology, Inc. All rights reserved.
Figure 7: 84-Ball FBGA – x16 Ball Assignments (Top View)
1 2 3 4 6 7 8 95
Vdd
DQ14
VddQ
DQ12
Vdd
DQ6
VddQ
DQ4
VddL
RFU
Vss
Vdd
NC
VssQ
DQ9
VssQ
NC
VssQ
DQ1
VssQ
Vref
CKE
BA0
A10
A3
A7
A12
Vss
UDM
VddQ
DQ11
Vss
LDM
VddQ
DQ3
Vss
WE#
BA1
A1
A5
A9
RFU
VssQ
UDQS
VddQ
DQ10
VssQ
LDQS
VddQ
DQ2
VssDL
RAS#
CAS#
A2
A6
A11
RFU
VddQ
DQ15
VddQ
DQ13
VddQ
DQ7
VddQ
DQ5
Vdd
ODT
Vdd
Vss
UDQS#/NU
VssQ
DQ8
VssQ
LDQS#/NU
VssQ
DQ0
VssQ
CK
CK#
CS#
A0
A4
A8
RFU
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
512Mb: x4, x8, x16 DDR2 SDRAM
Ball Assignments and Descriptions
PDF: 09005aef82f1e6e2
Rev. N 1/09 EN 16 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2004 Micron Technology, Inc. All rights reserved.
Table 3: FBGA 84-Ball – x16 and 60-Ball – x4, x8 Descriptions
x16 Ball
Number
x4, x8 Ball
Number Symbol Type Description
M8, M3, M7,
N2, N8, N3,
N7, P2, P8,
P3, M2,
P7, R2
–A0–A2,
A3–A5,
A6–A8,
A9, A10,
A11, A12
Input Address inputs: Provide the row address for ACTIVATE com-
mands, and the column address and auto precharge bit (A10) for
READ/WRITE commands, to select one location out of the memory
array in the respective bank. A10 sampled during a PRECHARGE
command determines whether the PRECHARGE applies to one
bank (A10 LOW, bank selected by BA[2:0]) or all banks (A10 HIGH).
The address inputs also provide the op-code during a LOAD MODE
command.
–H8, H3, H7,
J2, J8, J3,
J7, K2, K8,
K3, H2,
K7, L2,
L8
A0–A2,
A3–A5,
A6–A8,
A9, A10,
A11, A12,
A13
Input Address inputs: Provide the row address for ACTIVATE com-
mands, and the column address and auto precharge bit (A10) for
READ/WRITE commands, to select one location out of the memory
array in the respective bank. A10 sampled during a PRECHARGE
command determines whether the PRECHARGE applies to one
bank (A10 LOW, bank selected by BA[2:0]) or all banks (A10 HIGH).
The address inputs also provide the op-code during a LOAD MODE
command.
L2, L3 G2, G3 BA0, BA1 Input Bank address inputs: BA[1:0] define to which bank an ACTIVATE,
READ, WRITE, or PRECHARGE command is being applied. BA[2:0]
define which mode register including MR, EMR, EMR(2), and
EMR(3) is loaded during the LOAD MODE command.
J8, K8 E8, F8 CK, CK# Input Clock: CK and CK# are differential clock inputs. All address and con-
trol input signals are sampled on the crossing of the positive edge
of CK and negative edge of CK#. Output data (DQ and DQS/DQS#)
is referenced to the crossings of CK and CK#.
K2 F2 CKE Input Clock enable: CKE (registered HIGH) activates and CKE (registered
LOW) deactivates clocking circuitry on the DDR2 SDRAM. The specif-
ic circuitry that is enabled/disabled is dependent on the DDR2
SDRAM configuration and operating mode. CKE LOW provides pre-
charge power-down and SELF REFRESH operations (all banks idle),
or ACTIVATE power-down (row active in any bank). CKE is synchro-
nous for power-down entry, power-down exit, output disable, and
for SELF REFRESH entry. CKE is asynchronous for SELF REFRESH exit.
Input buffers (excluding CK, CK#, CKE, and ODT) are disabled dur-
ing POWER-DOWN. Input buffers (excluding CKE) are disabled dur-
ing SELF REFRESH. CKE is an SSTL_18 input but will detect a
LVCMOS LOW level once Vdd is applied during first power-up. Af-
ter Vref has become stable during the power-on and initialization
sequence, it must be maintained for proper operation of the CKE
receiver. For proper SELF-REFRESH operation, Vref must be main-
tained.
512Mb: x4, x8, x16 DDR2 SDRAM
Ball Assignments and Descriptions
PDF: 09005aef82f1e6e2
Rev. N 1/09 EN 17 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2004 Micron Technology, Inc. All rights reserved.
Table 3: FBGA 84-Ball – x16 and 60-Ball – x4, x8 Descriptions (Continued)
x16 Ball
Number
x4, x8 Ball
Number Symbol Type Description
L8 G8 CS# Input Chip select: CS# enables (registered LOW) and disables (registered
HIGH) the command decoder. All commands are masked when CS#
is registered high. CS# provides for external bank selection on sys-
tems with multiple ranks. CS# is considered part of the command
code.
F3, B3 B3 LDM, UDM,
DM
Input Input data mask: DM is an input mask signal for write data. Input
data is masked when DM is sampled HIGH along with that input
data during a WRITE access. DM is sampled on both edges of DQS.
Although DM balls are input-only, the DM loading is designed to
match that of DQ and DQS balls. LDM is DM for lower byte DQ0–
DQ7 and UDM is DM for upper byte DQ8–DQ15.
K9 F9 ODT Input On-die termination: ODT (registered HIGH) enables termination
resistance internal to the DDR2 SDRAM. When enabled, ODT is only
applied to each of the following balls: DQ0–DQ15, LDM, UDM,
LDQS, LDQS#, UDQS, and UDQS# for the x16; DQ0–DQ7, DQS,
DQS#, RDQS, RDQS#, and DM for the x8; DQ0–DQ3, DQS, DQS#,
and DM for the x4. The ODT input will be ignored if disabled via
the LOAD MODE command.
K7, L7, K3 F7, G7, F3 RAS#, CAS#,
WE#
Input Command inputs: RAS#, CAS#, and WE# (along with CS#) define
the command being entered.
G8, G2, H7,
H3, H1, H9,
F1, F9, C8,
C2, D7, D3,
D1, D9, B1,
B9
–DQ0–DQ2,
DQ3–DQ5,
DQ6–DQ8,
DQ9–DQ11,
DQ12–DQ14,
DQ15
I/O Data input/output: Bidirectional data bus for 32 Meg x 16.
–C8, C2, D7,
D3, D1, D9,
B1, B9
DQ0–DQ2,
DQ3–DQ5,
DQ6, DQ7
I/O Data input/output: Bidirectional data bus for 64 Meg x 8.
–C8, C2, D7,
D3
DQ0–DQ2,
DQ3
I/O Data input/output: Bidirectional data bus for 128 Meg x 4.
–B7, A8 DQS, DQS# I/O Data strobe: Output with read data, input with write data for
source synchronous operation. Edge-aligned with read data, center-
aligned with write data. DQS# is only used when differential data
strobe mode is enabled via the LOAD MODE command.
F7, E8 –LDQS, LDQS# I/O Data strobe for lower byte: Output with read data, input with
write data for source synchronous operation. Edge-aligned with
read data, center-aligned with write data. LDQS# is only used when
differential data strobe mode is enabled via the LOAD MODE com-
mand.
512Mb: x4, x8, x16 DDR2 SDRAM
Ball Assignments and Descriptions
PDF: 09005aef82f1e6e2
Rev. N 1/09 EN 18 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2004 Micron Technology, Inc. All rights reserved.
Table 3: FBGA 84-Ball – x16 and 60-Ball – x4, x8 Descriptions (Continued)
x16 Ball
Number
x4, x8 Ball
Number Symbol Type Description
B7, A8 –UDQS,
UDQS#
I/O Data strobe for upper byte: Output with read data, input with
write data for source synchronous operation. Edge-aligned with
read data, center-aligned with write data. UDQS# is only used
when differential data strobe mode is enabled via the LOAD MODE
command.
–B3, A2 RDQS, RDQS# Output Redundant data strobe: For 64 Meg x 8 only. RDQS is enabled/dis-
abled via the load mode command to the extended mode register
(EMR). When RDQS is enabled, RDQS is output with read data only
and is ignored during write data. When RDQS is disabled, ball B3
becomes data mask (see DM ball). RDQS# is only used when RDQS
is enabled and differential data strobe mode is enabled.
A1, E1, M9,
R1, J9
A1, E9, L1,
H9
Vdd Supply Power supply: 1.8V ±0.1V.
A9, C1, C3,
C7, C9, G3,
E9, G1, G7,
G9
A9, C1, C3,
C7, C9
VddQ Supply DQ power supply: 1.8V ±0.1V. Isolated on the device for im-
proved noise immunity.
J1 E1 VddL Supply DLL power supply: 1.8V ±0.1V.
J2 E2 Vref Supply SSTL_18 reference voltage (VddQ/2).
A3, E3, J3,
N1, P9
A3, E3, J1, K9 Vss Supply Ground.
J7 E7 VssDL Supply DLL ground: Isolated on the device from Vss and VssQ.
A7, B2, B8,
D2, D8, E7,
F2, F8, H2,
H8
A7, B2, B8,
D2, D8
VssQ Supply DQ ground: Isolated on the device for improved noise immunity.
A2, E2 –NC –No connect: These balls should be left unconnected.
–B1, B9, D1,
D9
NF –No function: x8: these balls are used as DQ4–DQ7; x4: they are no
function.
A8, E8 A2, A8 NU –Not used: If EMR(E10) = 0: x16, A8 = UDQS# and E8 = LDQS#; x8,
A2 = RDQS# and A8 = DQS#; x4, A2 = NU and A8 = NU. If EMR(E10)
= 1: x16, A8 = NU and E8 = NU; x8, A2 = NU and A8 = NU; x4, A2 =
NU and A8 = NU.
L1, R8, R3, R7 G1, L3, L7 RFU –Reserved for future use: Bank address BA2, row address bits A13
(x16 only), A14, and A15.
512Mb: x4, x8, x16 DDR2 SDRAM
Ball Assignments and Descriptions
PDF: 09005aef82f1e6e2
Rev. N 1/09 EN 19 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2004 Micron Technology, Inc. All rights reserved.
Packaging
Package Dimensions
Figure 8: 84-Ball FBGA (12mm x 12.5mm) – x16
0.8 ±0.1
0.12 CC
11.2
Ball A1 ID
Ball A1 ID location
0.8
TYP
12.0 ±0.15
6.4
Seating
plane
12.5 ±0.15
0.80 TYP
84X Ø0.45
C
L
C
L
Solder ball
diameter refers
to post-reflow
condition.
1.2 MAX
0.25 MIN
Note: 1. All dimensions are in millimeters.
512Mb: x4, x8, x16 DDR2 SDRAM
Packaging
PDF: 09005aef82f1e6e2
Rev. N 1/09 EN 20 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2004 Micron Technology, Inc. All rights reserved.
Figure 9: 84-Ball FBGA (10mm x 12.5mm) – x16
Ball A1 ID location
1.20 MAX
Ball A1 ID
0.8
TYP
0.8 TYP
6.4
10.0 ±0.15
Solder ball diameter
refers to post reflow
condition.
84X Ø0.45
11.2
12.5 ±0.15
C
L
C
L
0.8 ±0.1
Seating plane
C
0.12 C
0.25 MIN
Note: 1. All dimensions are in millimeters.
512Mb: x4, x8, x16 DDR2 SDRAM
Packaging
PDF: 09005aef82f1e6e2
Rev. N 1/09 EN 21 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2004 Micron Technology, Inc. All rights reserved.
Figure 10: 84-Ball FBGA (8mm x 12.5mm) – x16
Ball A1 ID
1.2 MAX
0.8 TYP
8 ±0.15
0.8 ±0.1
0.25 MIN
Seating
plane A
11.2 CTR
6.4 CTR
0.12 A
84X Ø0.45
12.5 ±0.15
Ball A1 ID
987 321
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
Solder ball
material: SAC305.
Dimensions apply
to solder balls post-
reflow on Ø0.33
NSMD ball pads.
0.8 TYP
Exposed
gold-plated pad
1.0mm (MAX) X
0.7mm (NOM)
nonconductive floating pad
Note: 1. All dimensions are in millimeters.
512Mb: x4, x8, x16 DDR2 SDRAM
Packaging
PDF: 09005aef82f1e6e2
Rev. N 1/09 EN 22 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2004 Micron Technology, Inc. All rights reserved.
Figure 11: 60-Ball FBGA (12mm x 10mm) – x4, x8
0.8 ±0.1
0.12 CC
8.0
Ball A1 ID Ball A1 ID location
0.8
TYP
12.0 ±0.15
6.4
Seating
plane
10.0 ±0.15
0.8 TYP
60X Ø0.45
C
L
C
L
1.20 MAX
0.25 MIN
Solder ball
diameter refers
to post-reflow
condition.
Note: 1. All dimensions are in millimeters.
512Mb: x4, x8, x16 DDR2 SDRAM
Packaging
PDF: 09005aef82f1e6e2
Rev. N 1/09 EN 23 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2004 Micron Technology, Inc. All rights reserved.
Figure 12: 60-Ball FBGA (10mm x 10mm) – x4, x8
Ball A1 ID location
1.20 MAX
0.25 MIN
0.80 TYP
10.0 ±0.15
0.8 ±0.1
Seating plane
C
8.0
6.4
0.12 C
60X Ø0.45
Solder ball diameter
refers to post-reflow
condition.
C
L
10.0 ±0.15
Ball A1 ID
0.8 TYP
C
L
Note: 1. All dimensions are in millimeters.
512Mb: x4, x8, x16 DDR2 SDRAM
Packaging
PDF: 09005aef82f1e6e2
Rev. N 1/09 EN 24 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2004 Micron Technology, Inc. All rights reserved.
Figure 13: 60-Ball FBGA (8mm x 10mm) – x4, x8
Ball A1 ID
1.2 MAX
0.25 MIN
8 ±0.15
Ball A1 ID
60X Ø0.45
Solder ball
material: SAC305.
Dimensions apply
to solder balls post-
reflow on Ø0.33
NSMD ball pads.
0.8 TYP
0.8 TYP
8 CTR 10 ±0.15
0.8 ±0.1
0.12 A A
Seating
Plane
6.4 CTR
9 8 7 3 2 1
A
B
C
D
E
F
G
H
J
K
L
Exposed
gold-plated pad
1.0mm (MAX) X
0.7mm (NOM)
nonconductive floating pad
Note: 1. All dimensions are in millimeters.
512Mb: x4, x8, x16 DDR2 SDRAM
Packaging
PDF: 09005aef82f1e6e2
Rev. N 1/09 EN 25 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2004 Micron Technology, Inc. All rights reserved.
FBGA Package Capacitance
Table 4: Input Capacitance
Parameter Symbol Min Max Units Notes
Input capacitance: CK, CK# Cck 1.0 2.0 pF 1
Delta input capacitance: CK, CK# Cdck –0.25 pF 2, 3
Input capacitance: Address balls, bank address
balls, CS#, RAS#, CAS#, WE#, CKE, ODT
Ci 1.0 2.0 pF 1, 4
Delta input capacitance: Address balls, bank
address balls, CS#, RAS#, CAS#, WE#, CKE, ODT
Cdi –0.25 pF 2, 3
Input/output capacitance: DQ, DQS, DM, NF Cio 2.5 4.0 pF 1, 5
Delta input/output capacitance: DQ, DQS,
DM, NF
Cdio –0.5 pF 2, 3
Notes: 1. This parameter is sampled. Vdd = +1.8V ±0.1V, VddQ = +1.8V ±0.1V, Vref = Vss, f = 100
MHz, TC = 25°C, Vout(DC) = VddQ/2, Vout (peak-to-peak) = 0.1V. DM input is grouped
with I/O balls, reflecting the fact that they are matched in loading.
2. The capacitance per ball group will not differ by more than this maximum amount for
any given device.
3. ΔC are not pass/fail parameters; they are targets.
4. Reduce MAX limit by 0.25pF for -25 and -25E speed devices.
5. Reduce MAX limit by 0.5pF for -3, -3E, -5E, -25, -25E, and -37E speed devices.
512Mb: x4, x8, x16 DDR2 SDRAM
Packaging
PDF: 09005aef82f1e6e2
Rev. N 1/09 EN 26 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2004 Micron Technology, Inc. All rights reserved.
Electrical Specifications – Absolute Ratings
Stresses greater than those listed may cause permanent damage to the device. This is a
stress rating only, and functional operation of the device at these or any other condi-
tions oustide those indicated in the operational sections of this specification is not
implied. Exposure to absolute maximum rating conditions for extended periods may
affect reliability.
Table 5: Absolute Maximum DC Ratings
Parameter Symbol Min Max Units Notes
Vdd supply voltage relative to Vss Vdd –1.0 2.3 V 1
VddQ supply voltage relative to VssQ VddQ –0.5 2.3 V 1, 2
VddL supply voltage relative to VssL VddL –0.5 2.3 V 1
Voltage on any ball relative to Vss Vin, Vout –0.5 2.3 V 3
Input leakage current; any input 0V ≤ Vin ≤ Vdd;
all other balls not under test = 0V
Ii –5 5 µA
Output leakage current; 0V ≤ Vout ≤ VddQ; DQ
and ODT disabled
Ioz –5 5 µA
Vref leakage current; Vref = valid Vref level Ivref –2 2 µA
Notes: 1. Vdd, VddQ, and VddL must be within 300mV of each other at all times; this is not re-
quired when power is ramping down.
2. Vref ≤ 0.6 x VddQ; however, Vref may be ≥ VddQ provided that Vref ≤ 300mV.
3. Voltage on any I/O may not exceed voltage on VddQ.
Temperature and Thermal Impedance
It is imperative that the DDR2 SDRAM device’s temperature specifications, shown in
Table 6 (page 28), be maintained in order to ensure the junction temperature is in the
proper operating range to meet data sheet specifications. An important step in maintain-
ing the proper junction temperature is using the device’s thermal impedances correct-
ly. The thermal impedances are listed in Table 7 (page 29) for the applicable and
available die revision and packages.
Incorrectly using thermal impedances can produce significant errors. Read Micron tech-
nical note TN-00-08, “Thermal Applications,” prior to using the thermal impedances
listed in Table 7 (page 29). For designs that are expected to last several years and re-
quire the flexibility to use several DRAM die shrinks, consider using final target theta
values (rather than existing values) to account for increased thermal impedances from
the die size reduction.
The DDR2 SDRAM device’s safe junction temperature range can be maintained when
the TC specification is not exceeded. In applications where the device’s ambient temper-
ature is too high, use of forced air and/or heat sinks may be required in order to satisfy
the case temperature specifications.
512Mb: x4, x8, x16 DDR2 SDRAM
Electrical Specifications – Absolute Ratings
PDF: 09005aef82f1e6e2
Rev. N 1/09 EN 27 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2004 Micron Technology, Inc. All rights reserved.
Table 6: Temperature Limits
Parameter Symbol Min Max Units Notes
Storage temperature TSTG –55 150 °C 1
Operating temperature: commercial TC0 85 °C 2, 3
Operating temperature: industrial TC–40 95 °C 2, 3 , 4
TA–40 85 °C 4, 5
Operating temperature: automotive TC–40 105 °C 2, 3, 4
TA–40 105 °C 4, 5
Notes: 1. MAX storage case temperature TSTG is measured in the center of the package, as shown
in Figure 14 (page 28). This case temperature limit is allowed to be exceeded briefly
during package reflow, as noted in Micron technical note TN-00-15, “Recommended Sol-
dering Parameters.”
2. MAX operating case temperature TC is measured in the center of the package, as shown
in Figure 14 (page 28).
3. Device functionality is not guaranteed if the device exceeds maximum TC during
operation.
4. Both temperature specifications must be satisfied.
5. Operating ambient temperature surrounding the package.
Figure 14: Example Temperature Test Point Location
Width (W)
0.5 (W)
Length (L)
0.5 (L)
Test point
Lmm x Wmm FGBA
512Mb: x4, x8, x16 DDR2 SDRAM
Electrical Specifications – Absolute Ratings
PDF: 09005aef82f1e6e2
Rev. N 1/09 EN 28 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2004 Micron Technology, Inc. All rights reserved.
Table 7: Thermal Impedance
Die Revision Package Substrate
Θ JA (°C/W)
Airflow = 0m/s
Θ JA (°C/W)
Airflow = 1m/s
Θ JA (°C/W)
Airflow = 2m/s Θ JB (°C/W) Θ JC (°C/W)
B160-ball 2-layer 53.2 40.0 37.2 27.5 2.9
4-layer 37.4 30.9 27.7 24.2
84-ball 2-layer 50.2 36.8 32.1 24.5 3.1
4-layer 34.9 28.0 25.5 21.3
D160-ball 2-layer 56.9 43.6 38.5 30.6 3.8
4-layer 40.6 34.1 31.3 27.0
84-ball 2-layer 56.8 43.8 37.7 24.8 3.9
4-layer 40.3 33.2 30.4 23.5
F160-ball 2-layer 71.4 54.1 47.5 33.7 5.5
4-layer 53.6 44.5 40.5 33.5
84-ball 2-layer 65.8 50.4 44.3 30.7 4.1
4-layer 50.0 41.3 37.7 30.5
Note: 1. Thermal resistance data is based on a number of samples from multiple lots and should
be viewed as a typical number.
512Mb: x4, x8, x16 DDR2 SDRAM
Electrical Specifications – Absolute Ratings
PDF: 09005aef82f1e6e2
Rev. N 1/09 EN 29 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2004 Micron Technology, Inc. All rights reserved.
Electrical Specifications – Idd Parameters
Idd Specifications and Conditions
Table 8: General Idd Parameters
Idd Parameters -25E -25 -3E -3 -37E -5E Units
CL (Idd) 5 6 4 5 4 3 tCK
tRCD (Idd) 12.5 15 12 15 15 15 ns
tRC (Idd) 57.5 60 57 60 60 55 ns
tRRD (Idd) - x4/x8 (1KB) 7.5 7.5 7.5 7.5 7.5 7.5 ns
tRRD (Idd) - x16 (2KB) 10 10 10 10 10 10 ns
tCK (Idd) 2.5 2.5 3 3 3.75 5 ns
tRAS MIN (Idd) 45 45 45 45 45 40 ns
tRAS MAX (Idd) 70,000 70,000 70,000 70,000 70,000 70,000 ns
tRP (Idd) 12.5 15 12 15 15 15 ns
tRFC (Idd - 256Mb) 75 75 75 75 75 75 ns
tRFC (Idd - 512Mb) 105 105 105 105 105 105 ns
tRFC (Idd - 1Gb) 127.5 127.5 127.5 127.5 127.5 127.5 ns
tRFC (Idd - 2Gb) 195 195 195 195 195 195 ns
tFAW (Idd) - x4/x8 (1KB) Defined by pattern in Table 9 (page 31) ns
tFAW (Idd) - x16 (2KB) Defined by pattern in Table 9 (page 31) ns
512Mb: x4, x8, x16 DDR2 SDRAM
Electrical Specifications – Idd Parameters
PDF: 09005aef82f1e6e2
Rev. N 1/09 EN 30 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2004 Micron Technology, Inc. All rights reserved.
Idd7 Conditions
The detailed timings are shown below for Idd7. Where general Idd parameters in Ta-
ble 8 (page 30) conflict with pattern requirements of Table 9 (page 31), then Table 9
(page 31) requirements take precedence.
Table 9: Idd7 Timing Patterns (4-Bank Interleave READ Operation)
Speed Grade Idd7 Timing Patterns
Timing patterns for 4-bank x4/x8/x16 devices
-5E A0 RA0 A1 RA1 A2 RA2 A3 RA3 D D D
-37E A0 RA0 D A1 RA1 D A2 RA2 D A3 RA3 D D D D D
-3 A0 RA0 D D A1 RA1 D D A2 RA2 D D A3 RA3 D D D D D D
-3E A0 RA0 D D A1 RA1 D D A2 RA2 D D A3 RA3 D D D D D
-25 A0 RA0 D D A1 RA1 D D A2 RA2 D D A3 RA3 D D D D D D D D D D
-25E A0 RA0 D D A1 RA1 D D A2 RA2 D D A3 RA3 D D D D D D D D D
-187E A0 RA0 D D D D A1 RA1 D D D D A2 RA2 D D D D A3 RA3 D D D D D D D D D D D
Notes: 1. A = active; RA = read auto precharge; D = deselect.
2. All banks are being interleaved at tRC (Idd) without violating tRRD (Idd) using a BL = 4.
3. Control and address bus inputs are stable during DESELECTs.
512Mb: x4, x8, x16 DDR2 SDRAM
Electrical Specifications – Idd Parameters
PDF: 09005aef82f1e6e2
Rev. N 1/09 EN 31 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2004 Micron Technology, Inc. All rights reserved.
Table 10: DDR2 Idd Specifications and Conditions
Notes: 1–7 apply to the entire table
Parameter/Condition Symbol Configuration
-25E/
-25 -3E/-3 -37E -5E Units
Operating one bank active-precharge
current: tCK = tCK (Idd), tRC = tRC (Idd),
tRAS = tRAS MIN (Idd); CKE is HIGH, CS# is
HIGH between valid commands; address bus
inputs are switching; Data bus inputs are
switching
Idd0 x4, x8 100 90 80 80 mA
x16 135 120 110 110
Operating one bank active-read-pre-
charge current: Iout = 0mA; BL = 4, CL = CL
(Idd), AL = 0; tCK = tCK (Idd), tRC = tRC (Idd),
tRAS = tRAS MIN (Idd), tRCD = tRCD (Idd);
CKE is HIGH, CS# is HIGH between valid com-
mands; address bus inputs are switching; Da-
ta pattern is same as Idd4W
Idd1 x4, x8 115 105 95 90 mA
x16 165 150 135 130
Precharge power-down current: All
banks idle; tCK = tCK (Idd); CKE is LOW; Oth-
er control and address bus inputs are stable;
Data bus inputs are floating
Idd2P x4, x8, x16 7 7 7 7 mA
Precharge quiet standby current:All
banks idle; tCK = tCK (Idd); CKE is HIGH, CS#
is HIGH; Other control and address bus in-
puts are stable; Data bus inputs are floating
Idd2Q x4, x8 50 45 40 35 mA
x16 65 55 45 40
Precharge standby current: All banks idle;
tCK = tCK (Idd); CKE is HIGH, CS# is HIGH; Oth-
er control and address bus inputs are switch-
ing; Data bus inputs are switching
Idd2N x4, x8 55 50 45 40 mA
x16 70 60 50 45
Active power-down current: All banks
open; tCK = tCK (Idd); CKE is LOW; Other con-
trol and address bus inputs are stable; Data
bus inputs are floating
Idd3Pf Fast PDN exit
MR12 = 0
40 35 30 25 mA
Idd3Ps Slow PDN exit
MR12 = 1
12 12 12 12
Active standby current:All banks open;
tCK = tCK (Idd), tRAS = tRAS MAX (Idd), tRP =
tRP (Idd); CKE is HIGH, CS# is HIGH between
valid commands; Other control and address
bus inputs are switching; Data bus inputs are
switching
Idd3N x4, x8 70 65 55 45 mA
x16 75 70 60 50
512Mb: x4, x8, x16 DDR2 SDRAM
Electrical Specifications – Idd Parameters
PDF: 09005aef82f1e6e2
Rev. N 1/09 EN 32 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2004 Micron Technology, Inc. All rights reserved.
Table 10: DDR2 Idd Specifications and Conditions (Continued)
Notes: 1–7 apply to the entire table
Parameter/Condition Symbol Configuration
-25E/
-25 -3E/-3 -37E -5E Units
Operating burst write current:All banks
open, continuous burst writes; BL = 4, CL =
CL (Idd), AL = 0; tCK = tCK (Idd), tRAS = tRAS
MAX (Idd), tRP = tRP (Idd); CKE is HIGH, CS#
is HIGH between valid commands; address
bus inputs are switching; Data bus inputs are
switching
Idd4W x4, x8 195 170 140 115 mA
x16 295 250 205 160
Operating burst read current: All banks
open, continuous burst reads, Iout = 0mA;
BL = 4, CL = CL (Idd), AL = 0; tCK = tCK (Idd),
tRAS = tRAS MAX (Idd), tRP = tRP (Idd); CKE is
HIGH, CS# is HIGH between valid commands;
address bus inputs are switching; Data bus in-
puts are switching
Idd4R x4, x8 205 180 145 115 mA
x16 275 235 195 155
Burst refresh current:tCK = tCK (Idd); re-
fresh command at every tRFC (Idd) interval;
CKE is HIGH, CS# is HIGH between valid com-
mands; Other control and address bus inputs
are switching; Data bus inputs are switching
Idd5 x4, x8 230 180 170 165 mA
x16 230 185 175 170
Self refresh current: CK and CK# at 0V;
CKE ≤ 0.2V; Other control and address bus
inputs are floating; Data bus inputs are float-
ing
Idd6 x4, x8, x16 7 7 7 7 mA
Idd6L 3 3 3 3
Operating bank interleave read current:
All bank interleaving reads, Iout = 0mA; BL =
4, CL = CL (Idd), AL = tRCD (Idd) - 1 x tCK
(Idd); tCK = tCK (Idd), tRC = tRC (Idd), tRRD =
tRRD (Idd), tRCD = tRCD (Idd); CKE is HIGH,
CS# is HIGH between valid commands; ad-
dress bus inputs are stable during deselects;
Data bus inputs are switching; See Idd7 Con-
ditions (page 31) for details
Idd7 x4, x8 300 240 225 220 mA
x16 370 350 340 340
Notes: 1. Idd specifications are tested after the device is properly initialized. 0°C ≤ TC ≤ +85°C.
2. Vdd = +1.8V ±0.1V, VddQ = +1.8V ±0.1V, VddL = +1.8V ±0.1V, Vref = VddQ/2.
3. Idd parameters are specified with ODT disabled.
4. Data bus consists of DQ, DM, DQS, DQS#, RDQS, RDQS#, LDQS, LDQS#, UDQS, and
UDQS#. Idd values must be met with all combinations of EMR bits 10 and 11.
5. Definitions for Idd conditions:
LOW Vin ≤ Vil(AC) MAX
HIGH Vin ≥ Vih(AC) MIN
Stable Inputs stable at a HIGH or LOW level
512Mb: x4, x8, x16 DDR2 SDRAM
Electrical Specifications – Idd Parameters
PDF: 09005aef82f1e6e2
Rev. N 1/09 EN 33 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2004 Micron Technology, Inc. All rights reserved.
Floating Inputs at Vref = VddQ/2
Switching Inputs changing between HIGH and LOW every other clock cycle (once per
two clocks) for address and control signals
Switching Inputs changing between HIGH and LOW every other data transfer (once
per clock) for DQ signals, not including masks or strobes
6. Idd1, Idd4R, and Idd7 require A12 in EMR1 to be enabled during testing.
7. The following Idd values must be derated (Idd limits increase) on IT-option or on AT-op-
tion devices when operated outside of the range 0°C ≤ TC ≤ 85°C:
When
TC ≤ 0°C
Idd2P and Idd3P (slow) must be derated by 4 percent; Idd4R and Idd5W
must be derated by 2 percent; and Idd6 and Idd7 must be derated by 7 percent
When
TC ≥ 85°C
Idd0 , Idd1, Idd2N, Idd2Q, Idd3N, Idd3P (fast), Idd4R, Idd4W, and Idd5W
must be derated by 2 percent; Idd2P must be derated by 20 percent; Idd3P
slow must be derated by 30 percent; and Idd6 must be derated by 80 per-
cent (Idd6 will increase by this amount if TC < 85°C and the 2X refresh
option is still enabled)
512Mb: x4, x8, x16 DDR2 SDRAM
Electrical Specifications – Idd Parameters
PDF: 09005aef82f1e6e2
Rev. N 1/09 EN 34 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2004 Micron Technology, Inc. All rights reserved.
Notes: 1. All voltages are referenced to Vss.
2. Tests for AC timing, Idd, and electrical AC and DC characteristics may be conducted at
nominal reference/supply voltage levels, but the related specifications and the opera-
tion of the device are warranted for the full voltage range specified. ODT is disabled for
all measurements that are not ODT-specific.
3. Outputs measured with equivalent load (see Figure 18 (page 52)).
4. AC timing and Idd tests may use a Vil-to-Vih swing of up to 1.0V in the test environ-
ment, and parameter specifications are guaranteed for the specified AC input levels
under normal use conditions. The slew rate for the input signals used to test the device
is 1.0 V/ns for signals in the range between Vil(AC) and Vih(AC). Slew rates other than
1.0 V/ns may require the timing parameters to be derated as specified.
5. The AC and DC input level specifications are as defined in the SSTL_18 standard (that is,
the receiver will effectively switch as a result of the signal crossing the AC input level
and will remain in that state as long as the signal does not ring back above [below] the
DC input LOW [HIGH] level).
6. CK and CK# input slew rate is referenced at 1 V/ns (2 V/ns if measured differentially).
7. Operating frequency is only allowed to change during self refresh mode (see Figure 81
(page 130)), precharge power-down mode, or system reset condition (see Reset
(page 131)). SSC allows for small deviations in operating frequency, provided the SSC
guidelines are satisfied.
8. The clock’s tCK (AVG) is the average clock over any 200 consecutive clocks and
tCK (AVG) MIN is the smallest clock rate allowed (except for a deviation due to allowed
clock jitter). Input clock jitter is allowed provided it does not exceed values specified.
Also, the jitter must be of a random Gaussian distribution in nature.
9. Spread spectrum is not included in the jitter specification values. However, the input
clock can accommodate spread spectrum at a sweep rate in the range 20–60 kHz with
an additional one percent tCK (AVG); however, the spread spectrum may not use a clock
rate below tCK (AVG) MIN or above tCK (AVG) MAX.
10. MIN (tCL, tCH) refers to the smaller of the actual clock LOW time and the actual clock
HIGH time driven to the device. The clock’s half period must also be of a Gaussian distri-
bution; tCH (AVG) and tCL (AVG) must be met with or without clock jitter and with or
without duty cycle jitter. tCH (AVG) and tCL (AVG) are the average of any 200 consecu-
tive CK falling edges. tCH limits may be exceeded if the duty cycle jitter is small enough
that the absolute half period limits (tCH [ABS], tCL [ABS]) are not violated.
11. tHP (MIN) is the lesser of tCL and tCH actually applied to the device CK and CK# inputs;
thus, tHP (MIN) ≥ the lesser of tCL (ABS) MIN and tCH (ABS) MIN.
12. The period jitter (tJITper) is the maximum deviation in the clock period from the average
or nominal clock allowed in either the positive or negative direction. JEDEC specifies
tighter jitter numbers during DLL locking time. During DLL lock time, the jitter values
should be 20 percent less those than noted in the table (DLL locked).
13. The half-period jitter (tJITdty) applies to either the high pulse of clock or the low pulse
of clock; however, the two cumulatively can not exceed tJITper.
14. The cycle-to-cycle jitter (tJITcc) is the amount the clock period can deviate from one cycle
to the next. JEDEC specifies tighter jitter numbers during DLL locking time. During DLL
lock time, the jitter values should be 20 percent less than those noted in the table (DLL
locked).
15. The cumulative jitter error (tERRnper), where n is 2, 3, 4, 5, 6–10, or 11–50 is the amount
of clock time allowed to consecutively accumulate away from the average clock over
any number of clock cycles.
16. JEDEC specifies using tERR6–10per when derating clock-related output timing (see notes
19 and 48). Micron requires less derating by allowing tERR5per to be used.
17. This parameter is not referenced to a specific voltage level but is specified when the de-
vice output is no longer driving (tRPST) or beginning to drive (tRPRE).
512Mb: x4, x8, x16 DDR2 SDRAM
AC Timing Operating Specifications
PDF: 09005aef82f1e6e2
Rev. N 1/09 EN 43 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2004 Micron Technology, Inc. All rights reserved.
18. The inputs to the DRAM must be aligned to the associated clock, that is, the actual clock
that latches it in. However, the input timing (in ns) references to the tCK (AVG) when
determining the required number of clocks. The following input parameters are deter-
mined by taking the specified percentage times the tCK (AVG) rather than tCK: tIPW,
tDIPW, tDQSS, tDQSH, tDQSL, tDSS, tDSH, tWPST, and tWPRE.
19. The DRAM output timing is aligned to the nominal or average clock. Most output param-
eters must be derated by the actual jitter error when input clock jitter is present; this
will result in each parameter becoming larger. The following parameters are required to
be derated by subtracting tERR5per (MAX): tAC (MIN), tDQSCK (MIN), tLZDQS (MIN), tLZDQ
(MIN), tAON (MIN); while the following parameters are required to be derated by sub-
tracting tERR5per (MIN): tAC (MAX), tDQSCK (MAX), tHZ (MAX), tLZDQS (MAX), tLZDQ
(MAX), tAON (MAX). The parameter tRPRE (MIN) is derated by subtracting tJITper (MAX),
while tRPRE (MAX), is derated by subtracting tJITper (MIN). The parameter tRPST (MIN) is
derated by subtracting tJITdty (MAX), while tRPST (MAX), is derated by subtracting tJITd-
ty (MIN). Output timings that require tERR5per derating can be observed to have offsets
relative to the clock; however, the total window will not degrade.
20. When DQS is used single-ended, the minimum limit is reduced by 100ps.
21. tHZ and tLZ transitions occur in the same access time windows as valid data transitions.
These parameters are not referenced to a specific voltage level, but specify when the
device output is no longer driving (tHZ) or begins driving (tLZ).
22. tLZ (MIN) will prevail over a tDQSCK (MIN) + tRPRE (MAX) condition.
23. This is not a device limit. The device will operate with a negative value, but system per-
formance could be degraded due to bus turnaround.
24. It is recommended that DQS be valid (HIGH or LOW) on or before the WRITE command.
The case shown (DQS going from High-Z to logic LOW) applies when no WRITEs were
previously in progress on the bus. If a previous WRITE was in progress, DQS could be
HIGH during this time, depending on tDQSS.
25. The intent of the “Don’t Care” state after completion of the postamble is that the DQS-
driven signal should either be HIGH, LOW, or High-Z, and that any signal transition
within the input switching region must follow valid input requirements. That is, if DQS
transitions HIGH (above Vih[DC] MIN), then it must not transition LOW (below Vih[DC])
prior to tDQSH (MIN).
26. Referenced to each output group: x4 = DQS with DQ0–DQ3; x8 = DQS with DQ0–DQ7;
x16 = LDQS with DQ0–DQ7; and UDQS with DQ8–DQ15.
27. The data valid window is derived by achieving other specifications: tHP (tCK/2), tDQSQ,
and tQH (tQH = tHP - tQHS). The data valid window derates in direct proportion to the
clock duty cycle and a practical data valid window can be derived.
28. tQH = tHP - tQHS; the worst case tQH would be the lesser of tCL (ABS) MAX or
tCH (ABS) MAX times tCK (ABS) MIN - tQHS. Minimizing the amount of tCH (AVG) offset
and value of tJITdty will provide a larger tQH, which in turn will provide a larger valid
data out window.
29. This maximum value is derived from the referenced test load. tHZ (MAX) will prevail
over tDQSCK (MAX) + tRPST (MAX) condition.
30. The values listed are for the differential DQS strobe (DQS and DQS#) with a differential
slew rate of 2 V/ns (1 V/ns for each signal). There are two sets of values listed: tDSa, tDHa
and tDSb, tDHb. The tDSa, tDHa values (for reference only) are equivalent to the baseline
values of tDSb, tDHb at Vref when the slew rate is 2 V/ns, differentially. The baseline val-
ues, tDSb, tDHb, are the JEDEC-defined values, referenced from the logic trip points. tDSb
is referenced from Vih(AC) for a rising signal and Vil(AC) for a falling signal, while tDHb
is referenced from Vil(DC) for a rising signal and Vih(DC) for a falling signal. If the differ-
ential DQS slew rate is not equal to 2 V/ns, then the baseline values must be derated by
adding the values from Table 30 (page 65) and Table 31 (page 67). If the DQS differ-
ential strobe feature is not enabled, then the DQS strobe is single-ended and the
baseline values must be derated using Table 32 (page 68). Single-ended DQS data tim-
ing is referenced at DQS crossing Vref. The correct timing values for a single-ended DQS
512Mb: x4, x8, x16 DDR2 SDRAM
AC Timing Operating Specifications
PDF: 09005aef82f1e6e2
Rev. N 1/09 EN 44 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2004 Micron Technology, Inc. All rights reserved.
strobe are listed in Table 33 (page 68)–Table 35 (page 69) on Table 33 (page 68),
Table 34 (page 69), and Table 35 (page 69); listed values are already derated for slew
rate variations and converted from baseline values to Vref values.
31. Vil/Vih DDR2 overshoot/undershoot. See AC Overshoot/Undershoot Specification
(page 58).
32. For each input signal—not the group collectively.
33. There are two sets of values listed for command/address: tISa, tIHa and tISb, tIHb. The tISa,
tIHa values (for reference only) are equivalent to the baseline values of tISb, tIHb at Vref
when the slew rate is 1 V/ns. The baseline values, tISb, tIHb, are the JEDEC-defined values,
referenced from the logic trip points. tISb is referenced from Vih(AC) for a rising signal
and Vil(AC) for a falling signal, while tIHb is referenced from Vil(DC) for a rising signal
and Vih(DC) for a falling signal. If the command/address slew rate is not equal to 1 V/ns,
then the baseline values must be derated by adding the values from Table 28
(page 61) and Table 29 (page 62).
34. This is applicable to READ cycles only. WRITE cycles generally require additional time
due to tWR during auto precharge.
35. READs and WRITEs with auto precharge are allowed to be issued before tRAS (MIN) is
satisfied because tRAS lockout feature is supported in DDR2 SDRAM.
36. When a single-bank PRECHARGE command is issued, tRP timing applies. tRPA timing ap-
plies when the PRECHARGE (ALL) command is issued, regardless of the number of banks
open. For 8-bank devices (≥1Gb), tRPA (MIN) = tRP (MIN) + tCK (AVG) (Table 11 (page 35)
lists tRP [MIN] + tCK [AVG] MIN).
37. This parameter has a two clock minimum requirement at any tCK.
38. The tFAW (MIN) parameter applies to all 8-bank DDR2 devices. No more than four bank-
ACTIVATE commands may be issued in a given tFAW (MIN) period. tRRD (MIN) restriction
still applies.
39. The minimum internal READ-to-PRECHARGE time. This is the time from which the last 4-
bit prefetch begins to when the PRECHARGE command can be issued. A 4-bit prefetch is
when the READ command internally latches the READ so that data will output CL later.
This parameter is only applicable when tRTP/(2 × tCK) > 1, such as frequencies faster than
533 MHz when tRTP = 7.5ns. If tRTP/(2 × tCK) ≤ 1, then equation AL + BL/2 applies. tRAS
(MIN) has to be satisfied as well. The DDR2 SDRAM will automatically delay the internal
PRECHARGE command until tRAS (MIN) has been satisfied.
40. tDAL = (nWR) + (tRP/tCK). Each of these terms, if not already an integer, should be roun-
ded up to the next integer. tCK refers to the application clock period; nWR refers to the
tWR parameter stored in the MR9–MR11. For example, -37E at tCK = 3.75ns with tWR
programmed to four clocks would have tDAL = 4 + (15ns/3.75ns) clocks = 4 + (4) clocks =
8 clocks.
41. The refresh period is 64ms (commercial) or 32ms (industrial and automotive). This equa-
tes to an average refresh rate of 7.8125µs (commercial) or 3.9607µs (industrial and
automotive). To ensure all rows of all banks are properly refreshed, 8,192 REFRESH com-
mands must be issued every 64ms (commercial) or 32ms (industrial and automotive). The
JEDEC tRFC MAX of 70,000ns is not required as bursting of AUTO REFRESH commands is
allowed.
42. tDELAY is calculated from tIS + tCK + tIH so that CKE registration LOW is guaranteed pri-
or to CK, CK# being removed in a system RESET condition (see Reset (page 131)).
43. tISXR is equal to tIS and is used for CKE setup time during self refresh exit, as shown in
Figure 71 (page 122).
44. tCKE (MIN) of three clocks means CKE must be registered on three consecutive positive
clock edges. CKE must remain at the valid input level the entire time it takes to achieve
the three clocks of registration. Thus, after any CKE transition, CKE may not transition
from its valid level during the time period of tIS + 2 × tCK + tIH.
45. The half-clock of tAOFD’s 2.5 tCK assumes a 50/50 clock duty cycle. This half-clock value
must be derated by the amount of half-clock duty cycle error. For example, if the clock
512Mb: x4, x8, x16 DDR2 SDRAM
AC Timing Operating Specifications
PDF: 09005aef82f1e6e2
Rev. N 1/09 EN 45 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2004 Micron Technology, Inc. All rights reserved.
duty cycle was 47/53, tAOFD would actually be 2.5 - 0.03, or 2.47, for tAOF (MIN) and 2.5
+ 0.03, or 2.53, for tAOF (MAX).
46. ODT turn-on time tAON (MIN) is when the device leaves High-Z and ODT resistance be-
gins to turn on. ODT turn-on time tAON (MAX) is when the ODT resistance is fully on.
Both are measured from tAOND.
47. ODT turn-off time tAOF (MIN) is when the device starts to turn off ODT resistance. ODT
turn off time tAOF (MAX) is when the bus is in High-Z. Both are measured from tAOFD.
48. Half-clock output parameters must be derated by the actual tERR5per and tJITdty when
input clock jitter is present; this will result in each parameter becoming larger. The pa-
rameter tAOF (MIN) is required to be derated by subtracting both tERR5per (MAX) and
tJITdty (MAX). The parameter tAOF (MAX) is required to be derated by subtracting both
tERR5per (MIN) and tJITdty (MIN).
49. The -187E maximum limit is 2 × tCK + tAC (MAX) + 1,000 but it will likely be
3 x tCK + tAC (MAX) + 1,000 in the future.
50. Should use 8 tCK for backward compatibility.
AC and DC Operating Conditions
Table 12: Recommended DC Operating Conditions (SSTL_18)
All voltages referenced to Vss
Parameter Symbol Min Nom Max Units Notes
Supply voltage Vdd 1.7 1.8 1.9 V 1, 2
VddL supply voltage VddL 1.7 1.8 1.9 V 2, 3
I/O supply voltage VddQ 1.7 1.8 1.9 V 2, 3
I/O reference voltage Vref(DC) 0.49 × VddQ 0.50 × VddQ 0.51 × VddQ V 4
I/O termination voltage (system) Vtt Vref(DC) - 40 Vref(DC) Vref(DC) + 40 mV 5
Notes: 1. Vdd and VddQ must track each other. VddQ must be ≤ Vdd.
2. VssQ = VssL = Vss.
3. VddQ tracks with Vdd; VddL tracks with Vdd.
4. Vref is expected to equal VddQ/2 of the transmitting device and to track variations in
the DC level of the same. Peak-to-peak noise (noncommon mode) on Vref may not ex-
ceed ±1 percent of the DC value. Peak-to-peak AC noise on Vref may not exceed ±2
percent of Vref(DC). This measurement is to be taken at the nearest Vref bypass capacitor.
5. Vtt is not applied directly to the device. Vtt is a system supply for signal termination
resistors, is expected to be set equal to Vref, and must track variations in the DC level of
Vref.
512Mb: x4, x8, x16 DDR2 SDRAM
AC and DC Operating Conditions
PDF: 09005aef82f1e6e2
Rev. N 1/09 EN 46 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2004 Micron Technology, Inc. All rights reserved.
ODT DC Electrical Characteristics
Table 13: ODT DC Electrical Characteristics
All voltages are referenced to Vss
Parameter Symbol Min Nom Max Units Notes
Rtt effective impedance value for 75Ω setting
EMR (A6, A2) = 0, 1
Rtt1(eff) 60 75 90 Ω1, 2
Rtt effective impedance value for 150Ω setting
EMR (A6, A2) = 1, 0
Rtt2(eff) 120 150 180 Ω1, 2
Rtt effective impedance value for 50Ω setting
EMR (A6, A2) = 1, 1
Rtt3(eff) 40 50 60 Ω1, 2
Deviation of VM with respect to VddQ/2 ΔVM –6 –6 % 3
Notes: 1. Rtt1(eff) and Rtt2(eff) are determined by separately applying Vih(AC) and Vil(DC) to the
ball being tested, and then measuring current, I(Vih[AC]), and I(Vil[AC]), respectively.
2. Minimum IT and AT device values are derated by six percent when the devices operate
between –40°C and 0°C (TC ).
3. Measure voltage (VM) at tested ball with no load.
512Mb: x4, x8, x16 DDR2 SDRAM
ODT DC Electrical Characteristics
PDF: 09005aef82f1e6e2
Rev. N 1/09 EN 47 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2004 Micron Technology, Inc. All rights reserved.
Input Electrical Characteristics and Operating Conditions
Table 14: Input DC Logic Levels
All voltages are referenced to Vss
Parameter Symbol Min Max Units
Input high (logic 1) voltage Vih(DC) Vref(DC) + 125 VddQ1mV
Input low (logic 0) voltage Vil(DC) –300 Vref(DC) - 125 mV
Note: 1. VddQ + 300mV allowed provided 1.9V is not exceeded.
Table 15: Input AC Logic Levels
All voltages are referenced to Vss
Parameter Symbol Min Max Units
Input high (logic 1) voltage (-37E/-5E) Vih(AC) Vref(DC) + 250 VddQ1mV
Input high (logic 1) voltage (-187E/-25E/-25/-3E/-3) Vih(AC) Vref(DC) + 200 VddQ1mV
Input low (logic 0) voltage (-37E/-5E) Vil(AC) –300 Vref(DC) - 250 mV
Input low (logic 0) voltage (-187E/-25E/-25/-3E/-3) Vil(AC) –300 Vref(DC) - 200 mV
Note: 1. VddQ + 300mV allowed provided 1.9V is not exceeded.
Figure 15: Single-Ended Input Signal Levels
650mV
775mV
864mV
882mV
900mV
918mV
936mV
1,025mV
1,150mV
Vil(ac)
Vil(dc)
Vref - AC noise
Vref - DC error
Vref + DC error
Vref + AC noise
Vih(dc)
Vih(ac)
Note: 1. Numbers in diagram reflect nominal DDR2-400/DDR2-533 values.
512Mb: x4, x8, x16 DDR2 SDRAM
Input Electrical Characteristics and Operating Conditions
PDF: 09005aef82f1e6e2
Rev. N 1/09 EN 48 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2004 Micron Technology, Inc. All rights reserved.
Table 16: Differential Input Logic Levels
All voltages referenced to Vss
Parameter Symbol Min Max Units Notes
DC input signal voltage Vin(DC) –300 VddQ mV 1, 6
DC differential input voltage Vid(DC) 250 VddQ mV 2, 6
AC differential input voltage Vid(AC) 500 VddQ mV 3, 6
AC differential cross-point voltage Vix(AC) 0.50 × VddQ - 175 0.50 × VddQ + 175 mV 4
Input midpoint voltage Vmp(DC) 850 950 mV 5
Notes: 1. Vin(DC) specifies the allowable DC execution of each input of differential pair such as
CK, CK#, DQS, DQS#, LDQS, LDQS#, UDQS, UDQS#, and RDQS, RDQS#.
2. Vid(DC) specifies the input differential voltage |Vtr - Vcp| required for switching, where
Vtr is the true input (such as CK, DQS, LDQS, UDQS) level and Vcp is the complementary
input (such as CK#, DQS#, LDQS#, UDQS#) level. The minimum value is equal to Vih(DC) -
Vil(DC). Differential input signal levels are shown in Figure 16 (page 49).
3. Vid(AC) specifies the input differential voltage |Vtr - Vcp| required for switching, where
Vtr is the true input (such as CK, DQS, LDQS, UDQS, RDQS) level and Vcp is the comple-
mentary input (such as CK#, DQS#, LDQS#, UDQS#, RDQS#) level. The minimum value is
equal to Vih(AC) - Vil(AC), as shown in Table 15 (page 48).
4. The typical value of Vix(AC) is expected to be about 0.5 × VddQ of the transmitting de-
vice and Vix(AC) is expected to track variations in VddQ. Vix(AC) indicates the voltage at
which differential input signals must cross, as shown in Figure 16 (page 49).
5. Vmp(DC) specifies the input differential common mode voltage (Vtr + Vcp)/2 where Vtr
is the true input (CK, DQS) level and Vcp is the complementary input (CK#, DQS#).
Vmp(DC) is expected to be approximately 0.5 × VddQ.
6. VddQ + 300mV allowed provided 1.9V is not exceeded.
Figure 16: Differential Input Signal Levels
TR2
CP2
2.1V
VddQ = 1.8V
Vin(dc) MAX1
Vin(dc) MIN1
–0.30V
0.9V
1.075V
0.725V
Vid(ac)6
Vid(dc)5
X
Vmp(dc)3Vix(ac)4
X
Notes: 1. TR and CP may not be more positive than VddQ + 0.3V or more negative than Vss - 0.3V.
2. TR represents the CK, DQS, RDQS, LDQS, and UDQS signals; CP represents CK#, DQS#,
RDQS#, LDQS#, and UDQS# signals.
3. This provides a minimum of 850mV to a maximum of 950mV and is expected to be
VddQ/2.
4. TR and CP must cross in this region.
5. TR and CP must meet at least Vid(DC) MIN when static and is centered around Vmp(DC).
512Mb: x4, x8, x16 DDR2 SDRAM
Input Electrical Characteristics and Operating Conditions
PDF: 09005aef82f1e6e2
Rev. N 1/09 EN 49 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2004 Micron Technology, Inc. All rights reserved.
6. TR and CP must have a minimum 500mV peak-to-peak swing.
7. Numbers in diagram reflect nominal values (VddQ = 1.8V).
512Mb: x4, x8, x16 DDR2 SDRAM
Input Electrical Characteristics and Operating Conditions
PDF: 09005aef82f1e6e2
Rev. N 1/09 EN 50 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2004 Micron Technology, Inc. All rights reserved.
Output Electrical Characteristics and Operating Conditions
Table 17: Differential AC Output Parameters
Parameter Symbol Min Max Units Notes
AC differential cross-point voltage Vox(AC) 0.50 × VddQ - 125 0.50 × VddQ + 125 mV 1
AC differential voltage swing Vswing 1.0 –mV
Note: 1. The typical value of Vox(AC) is expected to be about 0.5 × VddQ of the transmitting de-
vice and Vox(AC) is expected to track variations in VddQ. Vox(AC) indicates the voltage
at which differential output signals must cross.
Figure 17: Differential Output Signal Levels
Crossing point
Vox
VssQ
Vswing
VddQ
Vtr
Vcp
Table 18: Output DC Current Drive
Parameter Symbol Value Units Notes
Output MIN source DC current Ioh –13.4 mA 1, 2, 4
Output MIN sink DC current Iol 13.4 mA 2, 3, 4
Notes: 1. For Ioh(DC); VddQ = 1.7V, Vout = 1,420mV. (Vout - VddQ)/Ioh must be less than 21Ω for
values of Vout between VddQ and VddQ - 280mV.
2. For Iol(DC); VddQ = 1.7V, Vout = 280mV. Vout/Iol must be less than 21Ω for values of
Vout between 0V and 280mV.
3. The DC value of Vref applied to the receiving device is set to Vtt.
4. The values of Ioh(DC) and Iol(DC) are based on the conditions given in Notes 1 and 2.
They are used to test device drive current capability to ensure Vih (MIN) plus a noise
margin and Vil (MAX) minus a noise margin are delivered to an SSTL_18 receiver. The
actual current values are derived by shifting the desired driver operating point (see out-
put IV curves) along a 21Ω load line to define a convenient driver current for measurement.
512Mb: x4, x8, x16 DDR2 SDRAM
Output Electrical Characteristics and Operating Conditions
PDF: 09005aef82f1e6e2
Rev. N 1/09 EN 51 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2004 Micron Technology, Inc. All rights reserved.
Table 19: Output Characteristics
Parameter Min Nom Max Units Notes
Output impedance See Output Driver Characteristics (page 53) Ω1, 2
Pull-up and pull-down mismatch 0 –4Ω1, 2, 3
Output slew rate 1.5 –5 V/ns 1, 4, 5, 6
Notes: 1. Absolute specifications: 0°C ≤ TC ≤ +85°C; VddQ = +1.8V ±0.1V, Vdd = +1.8V ±0.1V.
2. Impedance measurement conditions for output source DC current: VddQ = 1.7V;
Vout = 1,420mV; (Vout - VddQ)/Ioh must be less than 23.4Ω for values of Vout between
VddQ and VddQ - 280mV. The impedance measurement condition for output sink DC
current: VddQ = 1.7V; Vout = 280mV; Vout/Iol must be less than 23.4Ω for values of Vout
between 0V and 280mV.
3. Mismatch is an absolute value between pull-up and pull-down; both are measured at
the same temperature and voltage.
4. Output slew rate for falling and rising edges is measured between Vtt - 250mV and
Vtt + 250mV for single-ended signals. For differential signals (DQS, DQS#), output slew
rate is measured between DQS - DQS# = –500mV and DQS# - DQS = +500mV. Output
slew rate is guaranteed by design but is not necessarily tested on each device.
5. The absolute value of the slew rate as measured from Vil(DC) MAX to Vih(DC) MIN is
equal to or greater than the slew rate as measured from Vil(AC) MAX to Vih(AC) MIN.
This is guaranteed by design and characterization.
6. IT and AT devices require an additional 0.4 V/ns in the MAX limit when TC is between –
40°C and 0°C.
Figure 18: Output Slew Rate Load
Output
(VOUT)
Reference
point
25Ω
VTT = VDDQ/2
512Mb: x4, x8, x16 DDR2 SDRAM
Output Electrical Characteristics and Operating Conditions
PDF: 09005aef82f1e6e2
Rev. N 1/09 EN 52 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2004 Micron Technology, Inc. All rights reserved.
Output Driver Characteristics
Figure 19: Full Strength Pull-Down Characteristics
Vout (V)
0.0 0.5 1.0 1.5
120
100
80
60
40
20
0
Iout (mA)
Table 20: Full Strength Pull-Down Current (mA)
Voltage (V) Min Nom Max
0.0 0.00 0.00 0.00
0.1 4.30 5.63 7.95
0.2 8.60 11.30 15.90
0.3 12.90 16.52 23.85
0.4 16.90 22.19 31.80
0.5 20.40 27.59 39.75
0.6 23.28 32.39 47.70
0.7 25.44 36.45 55.55
0.8 26.79 40.38 62.95
0.9 27.67 44.01 69.55
1.0 28.38 47.01 75.35
1.1 28.96 49.63 80.35
1.2 29.46 51.71 84.55
1.3 29.90 53.32 87.95
1.4 30.29 54.9 90.70
1.5 30.65 56.03 93.00
1.6 30.98 57.07 95.05
1.7 31.31 58.16 97.05
1.8 31.64 59.27 99.05
1.9 31.96 60.35 101.05
512Mb: x4, x8, x16 DDR2 SDRAM
Output Driver Characteristics
PDF: 09005aef82f1e6e2
Rev. N 1/09 EN 53 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2004 Micron Technology, Inc. All rights reserved.
Figure 20: Full Strength Pull-Up Characteristics
Vdd Q - Vout (V)
0
–20
–40
–60
–80
–100
–120
0 0.5 1.0 1.5
Iout (mA)
Table 21: Full Strength Pull-Up Current (mA)
Voltage (V) Min Nom Max
0.0 0.00 0.00 0.00
0.1 –4.30 –5.63 –7.95
0.2 –8.60 –11.30 –15.90
0.3 –12.90 –16.52 –23.85
0.4 –16.90 –22.19 –31.80
0.5 –20.40 –27.59 –39.75
0.6 –23.28 –32.39 –47.70
0.7 –25.44 –36.45 –55.55
0.8 –26.79 –40.38 –62.95
0.9 –27.67 –44.01 –69.55
1.0 –28.38 –47.01 –75.35
1.1 –28.96 –49.63 –80.35
1.2 –29.46 –51.71 –84.55
1.3 –29.90 –53.32 –87.95
1.4 –30.29 –54.90 –90.70
1.5 –30.65 –56.03 –93.00
1.6 –30.98 –57.07 –95.05
1.7 –31.31 –58.16 –97.05
1.8 –31.64 –59.27 –99.05
1.9 –31.96 –60.35 –101.05
512Mb: x4, x8, x16 DDR2 SDRAM
Output Driver Characteristics
PDF: 09005aef82f1e6e2
Rev. N 1/09 EN 54 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2004 Micron Technology, Inc. All rights reserved.
Figure 21: Reduced Strength Pull-Down Characteristics
70
60
50
40
30
20
10
0
0.0 0.5 1.0 1.5
Vout (V)
Iout (mV)
Table 22: Reduced Strength Pull-Down Current (mA)
Voltage (V) Min Nom Max
0.0 0.00 0.00 0.00
0.1 1.72 2.98 4.77
0.2 3.44 5.99 9.54
0.3 5.16 8.75 14.31
0.4 6.76 11.76 19.08
0.5 8.16 14.62 23.85
0.6 9.31 17.17 28.62
0.7 10.18 19.32 33.33
0.8 10.72 21.40 37.77
0.9 11.07 23.32 41.73
1.0 11.35 24.92 45.21
1.1 11.58 26.30 48.21
1.2 11.78 27.41 50.73
1.3 11.96 28.26 52.77
1.4 12.12 29.10 54.42
1.5 12.26 29.70 55.80
1.6 12.39 30.25 57.03
1.7 12.52 30.82 58.23
1.8 12.66 31.41 59.43
1.9 12.78 31.98 60.63
512Mb: x4, x8, x16 DDR2 SDRAM
Output Driver Characteristics
PDF: 09005aef82f1e6e2
Rev. N 1/09 EN 55 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2004 Micron Technology, Inc. All rights reserved.
Figure 22: Reduced Strength Pull-Up Characteristics
0
–10
–20
–30
–40
–50
–60
–70
0.0 0.5 1.0 1.5
VddQ - Vout (V)
Iout (mV)
Table 23: Reduced Strength Pull-Up Current (mA)
Voltage (V) Min Nom Max
0.0 0.00 0.00 0.00
0.1 –1.72 –2.98 –4.77
0.2 –3.44 –5.99 –9.54
0.3 –5.16 –8.75 –14.31
0.4 –6.76 –11.76 –19.08
0.5 –8.16 –14.62 –23.85
0.6 –9.31 –17.17 –28.62
0.7 –10.18 –19.32 –33.33
0.8 –10.72 –21.40 –37.77
0.9 –11.07 –23.32 –41.73
1.0 –11.35 –24.92 –45.21
1.1 –11.58 –26.30 –48.21
1.2 –11.78 –27.41 –50.73
1.3 –11.96 –28.26 –52.77
1.4 –12.12 –29.10 –54.42
1.5 –12.26 –29.69 –55.8
1.6 –12.39 –30.25 –57.03
1.7 –12.52 –30.82 –58.23
1.8 –12.66 –31.42 –59.43
1.9 –12.78 –31.98 –60.63
512Mb: x4, x8, x16 DDR2 SDRAM
Output Driver Characteristics
PDF: 09005aef82f1e6e2
Rev. N 1/09 EN 56 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2004 Micron Technology, Inc. All rights reserved.
Power and Ground Clamp Characteristics
Power and ground clamps are provided on the following input-only balls: Address balls,
bank address balls, CS#, RAS#, CAS#, WE#, ODT, and CKE.
Table 24: Input Clamp Characteristics
Voltage Across Clamp (V)
Minimum Power Clamp Current
(mA)
Minimum Ground Clamp Current
(mA)
0.0 0.0 0.0
0.1 0.0 0.0
0.2 0.0 0.0
0.3 0.0 0.0
0.4 0.0 0.0
0.5 0.0 0.0
0.6 0.0 0.0
0.7 0.0 0.0
0.8 0.1 0.1
0.9 1.0 1.0
1.0 2.5 2.5
1.1 4.7 4.7
1.2 6.8 6.8
1.3 9.1 9.1
1.4 11.0 11.0
1.5 13.5 13.5
1.6 16.0 16.0
1.7 18.2 18.2
1.8 21.0 21.0
Figure 23: Input Clamp Characteristics
Voltage Across Clamp (V)
Minimum Clamp Current (mA)
25
20
15
10
5
0
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8
512Mb: x4, x8, x16 DDR2 SDRAM
Power and Ground Clamp Characteristics
PDF: 09005aef82f1e6e2
Rev. N 1/09 EN 57 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2004 Micron Technology, Inc. All rights reserved.
AC Overshoot/Undershoot Specification
Some revisions will support the 0.9V maximum average amplitude instead of the 0.5V
maximum average amplitude shown in Table 25 (page 58) and Table 26 (page 58).
Table 25: Address and Control Balls
Applies to address balls, bank address balls, CS#, RAS#, CAS#, WE#, CKE, and ODT
Parameter
Specification
-187E -25/-25E -3/-3E -37E -5E
Maximum peak amplitude allowed for overshoot area
(see Figure 24 (page 58)) 0.50V 0.50V 0.50V 0.50V 0.50V
Maximum peak amplitude allowed for undershoot area
(see Figure 25 (page 58)) 0.50V 0.50V 0.50V 0.50V 0.50V
Maximum overshoot area above Vdd (see Figure 24 (page 58)) 0.5 V/ns 0.66 V/ns 0.80 V/ns 1.00 V/ns 1.33 V/ns
Maximum undershoot area below Vss (see Figure 25
(page 58)) 0.5 V/ns 0.66 V/ns 0.80 V/ns 1.00 V/ns 1.33 V/ns
Table 26: Clock, Data, Strobe, and Mask Balls
Applies to DQ, DQS, DQS#, RDQS, RDQS#, UDQS, UDQS#, LDQS, LDQS#, DM, UDM, and LDM
Parameter
Specification
-187E -25/-25E -3/-3E -37E -5E
Maximum peak amplitude allowed for overshoot area
(see Figure 24 (page 58))
0.50V 0.50V 0.50V 0.50V 0.50V
Maximum peak amplitude allowed for undershoot area
(see Figure 25 (page 58))
0.50V 0.50V 0.50V 0.50V 0.50V
Maximum overshoot area above VddQ (see Figure 24
(page 58))
0.19 V/ns 0.23 V/ns 0.23 V/ns 0.28 V/ns 0.38 V/ns
Maximum undershoot area below VssQ (see Figure 25
(page 58))
0.19 V/ns 0.23 V/ns 0.23 V/ns 0.28 V/ns 0.38 V/ns
Figure 24: Overshoot
Maximum amplitude
Overshoot area
Vdd/VddQ
Vss/VssQ
Volts (V)
Time (ns)
Figure 25: Undershoot
Vss/VssQ
Maximum amplitude
Undershoot area
Time (ns)
Volts (V)
512Mb: x4, x8, x16 DDR2 SDRAM
AC Overshoot/Undershoot Specification
PDF: 09005aef82f1e6e2
Rev. N 1/09 EN 58 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2004 Micron Technology, Inc. All rights reserved.
Table 27: AC Input Test Conditions
Parameter Symbol Min Max Units Notes
Input setup timing measurement reference level address
balls, bank address balls, CS#, RAS#, CAS#, WE#, ODT,
DM, UDM, LDM, and CKE
Vrs See Note 2 1, 2, 3, 4
Input hold timing measurement reference level address
balls, bank address balls, CS#, RAS#, CAS#, WE#, ODT,
DM, UDM, LDM, and CKE
Vrh See Note 5 1, 3, 4, 5
Input timing measurement reference level (single-
ended) DQS for x4, x8; UDQS, LDQS for x16
Vref(DC) VddQ ×
0.49
VddQ ×
0.51
V 1, 3, 4, 6
Input timing measurement reference level (differential)
CK, CK# for x4, x8, x16; DQS, DQS# for x4, x8; RDQS,
RDQS# for x8; UDQS, UDQS#, LDQS, LDQS# for x16
Vrd Vix(AC) V 1, 3, 7, 8, 9
Notes: 1. All voltages referenced to Vss.
2. Input waveform setup timing (tISb) is referenced from the input signal crossing at the
Vih(AC) level for a rising signal and Vil(AC) for a falling signal applied to the device un-
der test, as shown in Figure 34 (page 72).
3. See Input Slew Rate Derating (page 60).
4. The slew rate for single-ended inputs is measured from DC level to AC level, Vil(DC) to
Vih(AC) on the rising edge and Vil(AC) to Vih(DC) on the falling edge. For signals refer-
enced to Vref, the valid intersection is where the “tangent” line intersects Vref, as
shown in Figure 27 (page 63), Figure 29 (page 65), Figure 31 (page 70), and Fig-
ure 33 (page 71).
5. Input waveform hold (tIHb) timing is referenced from the input signal crossing at the
Vil(DC) level for a rising signal and Vih(DC) for a falling signal applied to the device un-
der test, as shown in Figure 34 (page 72).
6. Input waveform setup timing (tDS) and hold timing (tDH) for single-ended data strobe is
referenced from the crossing of DQS, UDQS, or LDQS through the Vref level applied to
the device under test, as shown in Figure 36 (page 73).
7. Input waveform setup timing (tDS) and hold timing (tDH) when differential data strobe
is enabled is referenced from the cross-point of DQS/DQS#, UDQS/UDQS#, or LDQS/
LDQS#, as shown in Figure 35 (page 72).
8. Input waveform timing is referenced to the crossing point level (Vix) of two input sig-
nals (Vtr and Vcp) applied to the device under test, where Vtr is the true input signal
and Vcp is the complementary input signal, as shown in Figure 37 (page 73).
9. The slew rate for differentially ended inputs is measured from twice the DC level to
twice the AC level: 2 × Vil(DC) to 2 × Vih(AC) on the rising edge and 2 × Vil(AC) to 2 ×
Vih(DC) on the falling edge. For example, the CK/CK# would be –250mV to +500mV for
CK rising edge and would be +250mV to –500mV for CK falling edge.
512Mb: x4, x8, x16 DDR2 SDRAM
AC Overshoot/Undershoot Specification
PDF: 09005aef82f1e6e2
Rev. N 1/09 EN 59 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2004 Micron Technology, Inc. All rights reserved.
Input Slew Rate Derating
For all input signals, the total tIS (setup time) and tIH (hold time) required is calculated
by adding the data sheet tIS (base) and tIH (base) value to the ΔtIS and ΔtIH derating
value, respectively. Example: tIS (total setup time) = tIS (base) + ΔtIS.
tIS, the nominal slew rate for a rising signal, is defined as the slew rate between the last
crossing of Vref(DC) and the first crossing of Vih(AC) MIN. Setup nominal slew rate (tIS)
for a falling signal is defined as the slew rate between the last crossing of Vref(DC) and
the first crossing of Vil(AC) MAX.
If the actual signal is always earlier than the nominal slew rate line between shaded
“Vref(DC) to AC region,” use the nominal slew rate for the derating value (Figure 26
(page 63)).
If the actual signal is later than the nominal slew rate line anywhere between the sha-
ded “Vref(DC) to AC region,” the slew rate of a tangent line to the actual signal from the
AC level to DC level is used for the derating value (see Figure 27 (page 63)).
tIH, the nominal slew rate for a rising signal, is defined as the slew rate between the last
crossing of Vil(DC) MAX and the first crossing of Vref(DC). tIH, nominal slew rate for a
falling signal, is defined as the slew rate between the last crossing of Vih(DC) MIN and
the first crossing of Vref(DC).
If the actual signal is always later than the nominal slew rate line between shaded “DC
to Vref(DC) region,” use the nominal slew rate for the derating value (Figure 28
(page 64)).
If the actual signal is earlier than the nominal slew rate line anywhere between shaded
“DC to Vref(DC) region,” the slew rate of a tangent line to the actual signal from the DC
level to Vref(DC) level is used for the derating value (Figure 29 (page 65)).
Although the total setup time might be negative for slow slew rates (a valid input signal
will not have reached Vih[AC]/Vil[AC] at the time of the rising clock transition), a valid
input signal is still required to complete the transition and reach Vih(AC)/Vil(AC).
For slew rates in between the values listed in Table 28 (page 61) and Table 29
(page 62), the derating values may obtained by linear interpolation.
512Mb: x4, x8, x16 DDR2 SDRAM
Input Slew Rate Derating
PDF: 09005aef82f1e6e2
Rev. N 1/09 EN 60 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2004 Micron Technology, Inc. All rights reserved.
Table 28: DDR2-400/533 Setup and Hold Time Derating Values (tIS and tIH)
Command/Address Slew Rate (V/ns)
CK, CK# Differential Slew Rate
Units
2.0 V/ns 1.5 V/ns 1.0 V/ns
ΔtIS ΔtIH ΔtIS ΔtIH ΔtIS ΔtIH
4.0 +187 +94 +217 +124 +247 +154 ps
3.5 +179 +89 +209 +119 +239 +149 ps
3.0 +167 +83 +197 +113 +227 +143 ps
2.5 +150 +75 +180 +105 +210 +135 ps
2.0 +125 +45 +155 +75 +185 +105 ps
1.5 +83 +21 +113 +51 +143 +81 ps
1.0 0 0 +30 +30 +60 +60 ps
0.9 –11 –14 +19 +16 +49 +46 ps
0.8 –25 –31 +5 –1 +35 +29 ps
0.7 –43 –54 –13 –24 +17 +6 ps
0.6 –67 –83 –37 –53 –7 –23 ps
0.5 –110 –125 –80 –95 –50 –65 ps
0.4 –175 –188 –145 –158 –115 –128 ps
0.3 –285 –292 –255 –262 –225 –232 ps
0.25 –350 –375 –320 –345 –290 –315 ps
0.2 –525 –500 –495 –470 –465 –440 ps
0.15 –800 –708 –770 –678 –740 –648 ps
0.1 –1,450 –1,125 –1,420 –1,095 –1,390 –1,065 ps
512Mb: x4, x8, x16 DDR2 SDRAM
Input Slew Rate Derating
PDF: 09005aef82f1e6e2
Rev. N 1/09 EN 61 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2004 Micron Technology, Inc. All rights reserved.
Table 29: DDR2-667/800/1066 Setup and Hold Time Derating Values (tIS and tIH)
Command/
Address Slew
Rate (V/ns)
CK, CK# Differential Slew Rate
Units
2.0 V/ns 1.5 V/ns 1.0 V/ns
ΔtIS ΔtIH ΔtIS ΔtIH ΔtIS ΔtIH
4.0 +150 +94 +180 +124 +210 +154 ps
3.5 +143 +89 +173 +119 +203 +149 ps
3.0 +133 +83 +163 +113 +193 +143 ps
2.5 +120 +75 +150 +105 +180 +135 ps
2.0 +100 +45 +160 +75 +160 +105 ps
1.5 +67 +21 +97 +51 +127 +81 ps
1.0 0 0 +30 +30 +60 +60 ps
0.9 –5 –14 +25 +16 +55 +46 ps
0.8 –13 –31 +17 –1 +47 +29 ps
0.7 –22 –54 +8 –24 +38 +6 ps
0.6 –34 –83 –4 –53 +36 –23 ps
0.5 –60 –125 –30 –95 0 –65 ps
0.4 –100 –188 –70 –158 –40 –128 ps
0.3 –168 –292 –138 –262 –108 –232 ps
0.25 –200 –375 –170 –345 –140 –315 ps
0.2 –325 –500 –295 –470 –265 –440 ps
0.15 –517 –708 –487 –678 –457 –648 ps
0.1 –1,000 –1,125 –970 –1,095 –940 –1,065 ps
512Mb: x4, x8, x16 DDR2 SDRAM
Input Slew Rate Derating
PDF: 09005aef82f1e6e2
Rev. N 1/09 EN 62 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2004 Micron Technology, Inc. All rights reserved.
Figure 26: Nominal Slew Rate for tIS
Vss
CK#
CK
tIH
tIS tIH
Setup slew rate
rising signal
Setup slew rate
falling signal
ΔTF ΔTR
Δ
TF
=
Vih(ac) MIN -
V
ref
(dc)
Δ
TR
=
VddQ
tIS
Nominal
slew rate
V
ref
to AC
region
Vref to AC
region
V
ref
(dc)
- Vil(ac) MAX
Vih(dc) MIN
Vref(dc)
Vil(ac) MAX
Vil(dc) MAX
Vih(ac) MIN
Nominal
slew rate
Figure 27: Tangent Line for tIS
Setup slew rate
rising signal
Δ
TF
Δ
TR
Tangent line (Vih[ac] MIN - Vref[dc])
ΔTR
=
Tangent
line
Tangent
line
V
ref to AC
region
Nominal
line
tIH
tIS tIH tIS
Vss
CK#
CK
VddQ
Vih(ac) MIN
Vih(dc) MIN
Vref(dc)
Vil(dc) MAX
Vil(ac) MAX
V
ref to AC
region
Nominal
line
512Mb: x4, x8, x16 DDR2 SDRAM
Input Slew Rate Derating
PDF: 09005aef82f1e6e2
Rev. N 1/09 EN 63 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2004 Micron Technology, Inc. All rights reserved.
Figure 28: Nominal Slew Rate for tIH
ΔTR ΔTF
Nominal
slew rate DC to Vref
region
tIH
tIS tIS
Vss
CK#
CK
VddQ
Vih(dc) MIN
Vref(dc)
Vil(ac) MAX
Vil(dc) MAX
Vih(ac) MIN
DC to Vref
region
Nominal
slew rate
tIH
512Mb: x4, x8, x16 DDR2 SDRAM
Input Slew Rate Derating
PDF: 09005aef82f1e6e2
Rev. N 1/09 EN 64 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2004 Micron Technology, Inc. All rights reserved.
Figure 29: Tangent Line for tIH
Tangent
line DC to Vref
region
tIH
tIS tIS
Vss
VddQ
Vih(dc) MIN
Vref(dc)
Vil(ac) MAX
Vil(dc) MAX
Vih(ac) MIN
DC to Vref
region Tangent
line
tIH
CK
CK#
Hold slew rate
falling signal
ΔTF
ΔTR
Tangent line (Vih[dc] MIN - Vref[dc])
Δ
TF
=
Nominal
line
Hold slew rate
rising signal
Tangent line (Vref[dc] - Vil[dc] MAX)
Δ
TR
=
Nominal
line
Table 30: DDR2-400/533 tDS, tDH Derating Values with Differential Strobe
All units are shown in picoseconds
DQ
Slew
Rate
(V/ns)
DQS, DQS# Differential Slew Rate
4.0 V/ns 3.0 V/ns 2.0 V/ns 1.8 V/ns 1.6 V/ns 1.4 V/ns 1.2 V/ns 1.0 V/ns 0.8 V/ns
Δ
tDS
Δ
tDH
Δ
tDS
Δ
tDH
Δ
tDS
Δ
tDH
Δ
tDS
Δ
tDH
Δ
tDS
Δ
tDH
Δ
tDS
Δ
tDH
Δ
tDS
Δ
tDH
Δ
tDS
Δ
tDH
Δ
tDS
Δ
tDH
2.0 125 45 125 45 125 45 – – – – – – – – – – – –
1.5 83 21 83 21 83 21 95 33 – – – – – – – – – –
1.0 0 0 0 0 0 0 12 12 24 24 – – – – – – – –
0.9 – – –11 –14 –11 –14 1 –2 13 10 25 22 – – – – – –
0.8 – – – – –25 –31 –13 –19 –1 –7 11 5 23 17 – – – –
0.7 – – – – – – –31 –42 –19 –30 –7 –18 5 –6 17 6 – –
0.6 – – – – – – – – –43 –59 –31 –47 –19 –35 –7 –23 5 –11
0.5 – – – – – – – – – – –74 –89 –62 –77 –50 –65 –38 –53
0.4 – – – – – – – – – – – – –127 –140 –115 –128 –103 –116
Notes: 1. For all input signals, the total tDS and tDH required is calculated by adding the data
sheet value to the derating value listed in Table 30 (page 65).
512Mb: x4, x8, x16 DDR2 SDRAM
Input Slew Rate Derating
PDF: 09005aef82f1e6e2
Rev. N 1/09 EN 65 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2004 Micron Technology, Inc. All rights reserved.
2. tDS nominal slew rate for a rising signal is defined as the slew rate between the last
crossing of Vref(DC) and the first crossing of Vih(AC) MIN. tDS nominal slew rate for a
falling signal is defined as the slew rate between the last crossing of Vref(DC) and the
first crossing of Vil(AC) MAX. If the actual signal is always earlier than the nominal slew
rate line between the shaded “Vref(DC) to AC region,” use the nominal slew rate for
the derating value (see Figure 30 (page 70)). If the actual signal is later than the nomi-
nal slew rate line anywhere between the shaded “Vref(DC) to AC region,” the slew rate
of a tangent line to the actual signal from the AC level to DC level is used for the derat-
ing value (see Figure 31 (page 70)).
3. tDH nominal slew rate for a rising signal is defined as the slew rate between the last
crossing of Vil(DC) MAX and the first crossing of Vref(DC). tDH nominal slew rate for a
falling signal is defined as the slew rate between the last crossing of Vih(DC) MIN and
the first crossing of Vref(DC). If the actual signal is always later than the nominal slew
rate line between the shaded “DC level to Vref(DC) region,” use the nominal slew rate
for the derating value (see Figure 32 (page 71)). If the actual signal is earlier than the
nominal slew rate line anywhere between shaded “DC to Vref(DC) region,” the slew
rate of a tangent line to the actual signal from the DC level to Vref(DC) level is used for
the derating value (see Figure 33 (page 71)).
4. Although the total setup time might be negative for slow slew rates (a valid input signal
will not have reached Vih[AC]/Vil[AC] at the time of the rising clock transition), a valid
input signal is still required to complete the transition and reach Vih(AC)/Vil(AC).
5. For slew rates between the values listed in this table, the derating values may be ob-
tained by linear interpolation.
6. These values are typically not subject to production test. They are verified by design and
characterization.
7. Single-ended DQS requires special derating. The values in Table 32 (page 68) are the
DQS single-ended slew rate derating with DQS referenced at Vref and DQ referenced at
the logic levels tDSb and tDHb. Converting the derated base values from DQ referenced
to the AC/DC trip points to DQ referenced to Vref is listed in Table 34 (page 69) and
Table 35 (page 69). Table 34 (page 69) provides the Vref-based fully derated values
for the DQ (tDSa and tDHa) for DDR2-533. Table 35 (page 69) provides the Vref-based
fully derated values for the DQ (tDSa and tDHa) for DDR2-400.
512Mb: x4, x8, x16 DDR2 SDRAM
Input Slew Rate Derating
PDF: 09005aef82f1e6e2
Rev. N 1/09 EN 66 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2004 Micron Technology, Inc. All rights reserved.
Table 31: DDR2-667/800/1066 tDS, tDH Derating Values with Differential Strobe
All units are shown in picoseconds
DQ
Slew
Rate
(V/
ns)
DQS, DQS# Differential Slew Rate
2.8 V/ns 2.4 V/ns 2.0 V/ns 1.8 V/ns 1.6 V/ns 1.4 V/ns 1.2 V/ns 1.0 V/ns 0.8 V/ns
Δ
tDS
Δ
tDH
Δ
tDS
Δ
tDH
Δ
tDS
Δ
tDH
Δ
tDS
Δ
tDH
Δ
tDS
Δ
tDH
Δ
tDS
Δ
tDH
Δ
tDS
Δ
tDH
Δ
tDS
Δ
tDH
Δ
tDS
Δ
tDH
2.0 100 63 100 63 100 63 112 75 124 87 136 99 148 111 160 123 172 135
1.5 67 42 67 42 67 42 79 54 91 66 103 78 115 90 127 102 139 114
1.0 0 0 0 0 0 0 12 12 24 24 36 36 48 48 60 60 72 72
0.9 –5 –14 –5 –14 –5 –14 7 –2 19 10 31 22 43 34 55 46 67 58
0.8 –13 –31 –13 –31 –13 –31 –1 –19 11 –7 23 5 35 17 47 29 59 41
0.7 –22 –54 –22 –54 –22 –54 –10 –42 2 –30 14 –18 26 –6 38 6 50 18
0.6 –34 –83 –34 –83 –34 –83 –22 –71 –10 –59 2 –47 14 –35 26 –23 38 –11
0.5 –60 –125 –60 –125 –60 –125 –48 –113 –36 –101 –24 –89 –12 –77 0 –65 12 –53
0.4 –100 –188 –100 –188 –100 –188 –88 –176 –76 –164 –64 –152 –52 –140 –40 –128 –28 –116
Notes: 1. For all input signals the total tDS and tDH required is calculated by adding the data
sheet value to the derating value listed in Table 31 (page 67).
2. tDS nominal slew rate for a rising signal is defined as the slew rate between the last
crossing of Vref(DC) and the first crossing of Vih(AC) MIN. tDS nominal slew rate for a
falling signal is defined as the slew rate between the last crossing of Vref(DC) and the
first crossing of Vil(AC) MAX. If the actual signal is always earlier than the nominal slew
rate line between the shaded “Vref(DC) to AC region,” use the nominal slew rate for
the derating value (see Figure 30 (page 70)). If the actual signal is later than the nomi-
nal slew rate line anywhere between shaded “Vref(DC) to AC region,” the slew rate of a
tangent line to the actual signal from the AC level to DC level is used for the derating
value (see Figure 31 (page 70)).
3. tDH nominal slew rate for a rising signal is defined as the slew rate between the last
crossing of Vil(DC) MAX and the first crossing of Vref(DC). tDH nominal slew rate for a
falling signal is defined as the slew rate between the last crossing of Vih(DC) MIN and
the first crossing of Vref(DC). If the actual signal is always later than the nominal slew
rate line between the shaded “DC level to Vref(DC) region,” use the nominal slew rate
for the derating value (see Figure 32 (page 71)). If the actual signal is earlier than the
nominal slew rate line anywhere between the shaded “DC to Vref(DC) region,” the slew
rate of a tangent line to the actual signal from the DC level to Vref(DC) level is used for
the derating value (see Figure 33 (page 71)).
4. Although the total setup time might be negative for slow slew rates (a valid input signal
will not have reached Vih[AC]/Vil[AC] at the time of the rising clock transition), a valid
input signal is still required to complete the transition and reach Vih(AC)/Vil(AC).
5. For slew rates between the values listed in this table, the derating values may be ob-
tained by linear interpolation.
6. These values are typically not subject to production test. They are verified by design and
characterization.
7. Single-ended DQS requires special derating. The values in Table 32 (page 68) are the
DQS single-ended slew rate derating with DQS referenced at Vref and DQ referenced at
the logic levels tDSb and tDHb. Converting the derated base values from DQ referenced
to the AC/DC trip points to DQ referenced to Vref is listed in Table 33 (page 68). Ta-
512Mb: x4, x8, x16 DDR2 SDRAM
Input Slew Rate Derating
PDF: 09005aef82f1e6e2
Rev. N 1/09 EN 67 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2004 Micron Technology, Inc. All rights reserved.
ble 33 (page 68) provides the Vref-based fully derated values for the DQ (tDSa and
tDHa) for DDR2-667. It is not advised to operate DDR2-800 and DDR2-1066 devices with
single-ended DQS; however, Table 32 (page 68) would be used with the base values.
Table 32: Single-Ended DQS Slew Rate Derating Values Using tDSb and tDHb
Reference points indicated in bold; Derating values are to be used with base tDSb- and tDHb--specified values
DQ (V/ns)
DQS Single-Ended Slew Rate Derated (at Vref)
2.0 V/ns 1.8 V/ns 1.6 V/ns 1.4 V/ns 1.2 V/ns 1.0 V/ns 0.8 V/ns 0.6 V/ns 0.4 V/ns
tDS tDH tDS tDH tDS tDH tDS tDH tDS tDH tDS tDH tDS tDH tDS tDH tDS tDH
2.0 130 53 130 53 130 53 130 53 130 53 145 48 155 45 165 41 175 38
1.5 97 32 97 32 97 32 97 32 97 32 112 27 122 24 132 20 142 17
1.0 30 –10 30 –10 30 –10 30 –10 30 –10 45 –15 55 –18 65 –22 75 –25
0.9 25 –24 25 –24 25 –24 25 –24 25 –24 40 –29 50 –32 60 –36 70 –39
0.8 17 –41 17 –41 17 –41 17 –41 17 –41 32 –46 42 –49 52 –53 61 –56
0.7 5 –64 5 –64 5 –64 5 –64 5 –64 20 –69 30 –72 40 –75 50 –79
0.6 –7 –93 –7 –93 –7 –93 –7 –93 –7 –93 8 –98 18 –102 28 –105 38 –108
0.5 –28 –135 –28 –135 –28 –135 –28 –135 –28 –135 –13 –140 –3 –143 7 –147 17 –150
0.4 –78 –198 –78 –198 –78 –198 –78 –198 –78 –198 –63 –203 –53 –206 –43 –210 –33 –213
Table 33: Single-Ended DQS Slew Rate Fully Derated (DQS, DQ at Vref) at DDR2-667
Reference points indicated in bold
DQ (V/ns)
DQS Single-Ended Slew Rate Derated (at Vref)
2.0 V/ns 1.8 V/ns 1.6 V/ns 1.4 V/ns 1.2 V/ns 1.0 V/ns 0.8 V/ns 0.6 V/ns 0.4 V/ns
tDS tDH tDS tDH tDS tDH tDS tDH tDS tDH tDS tDH tDS tDH tDS tDH tDS tDH
2.0 330 291 330 291 330 291 330 291 330 291 345 286 355 282 365 29 375 276
1.5 330 290 330 290 330 290 330 290 330 290 345 285 355 282 365 279 375 275
1.0 330 290 330 290 330 290 330 290 330 290 345 285 355 282 365 278 375 275
0.9 347 290 347 290 347 290 347 290 347 290 362 285 372 282 382 278 392 275
0.8 367 290 367 290 367 290 367 290 367 290 382 285 392 282 402 278 412 275
0.7 391 290 391 290 391 290 391 290 391 290 406 285 416 281 426 278 436 275
0.6 426 290 426 290 426 290 426 290 426 290 441 285 451 282 461 278 471 275
0.5 472 290 472 290 472 290 472 290 472 290 487 285 497 282 507 278 517 275
0.4 522 289 522 289 522 289 522 289 522 289 537 284 547 281 557 278 567 274
512Mb: x4, x8, x16 DDR2 SDRAM
Input Slew Rate Derating
PDF: 09005aef82f1e6e2
Rev. N 1/09 EN 68 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2004 Micron Technology, Inc. All rights reserved.
Table 34: Single-Ended DQS Slew Rate Fully Derated (DQS, DQ at Vref) at DDR2-533
Reference points indicated in bold
DQ (V/ns)
DQS Single-Ended Slew Rate Derated (at Vref)
2.0 V/ns 1.8 V/ns 1.6 V/ns 1.4 V/ns 1.2 V/ns 1.0 V/ns 0.8 V/ns 0.6 V/ns 0.4 V/ns
tDS tDH tDS tDH tDS tDH tDS tDH tDS tDH tDS tDH tDS tDH tDS tDH tDS tDH
2.0 355 341 355 341 355 341 355 341 355 341 370 336 380 332 390 329 400 326
1.5 364 340 364 340 364 340 364 340 364 340 379 335 389 332 399 329 409 325
1.0 380 340 380 340 380 340 380 340 380 340 395 335 405 332 415 328 425 325
0.9 402 340 402 340 402 340 402 340 402 340 417 335 427 332 437 328 447 325
0.8 429 340 429 340 429 340 429 340 429 340 444 335 454 332 464 328 474 325
0.7 463 340 463 340 463 340 463 340 463 340 478 335 488 331 498 328 508 325
0.6 510 340 510 340 510 340 510 340 510 340 525 335 535 332 545 328 555 325
0.5 572 340 572 340 572 340 572 340 572 340 587 335 597 332 607 328 617 325
0.4 647 339 647 339 647 339 647 339 647 339 662 334 672 331 682 328 692 324
Table 35: Single-Ended DQS Slew Rate Fully Derated (DQS, DQ at Vref) at DDR2-400
Reference points indicated in bold
DQ (V/ns)
DQS Single-Ended Slew Rate Derated (at Vref)
2.0 V/ns 1.8 V/ns 1.6 V/ns 1.4 V/ns 1.2 V/ns 1.0 V/ns 0.8 V/ns 0.6 V/ns 0.4 V/ns
tDS tDH tDS tDH tDS tDH tDS tDH tDS tDH tDS tDH tDS tDH tDS tDH tDS tDH
2.0 405 391 405 391 405 391 405 391 405 391 420 386 430 382 440 379 450 376
1.5 414 390 414 390 414 390 414 390 414 390 429 385 439 382 449 379 459 375
1.0 430 390 430 390 430 390 430 390 430 390 445 385 455 382 465 378 475 375
0.9 452 390 452 390 452 390 452 390 452 390 467 385 477 382 487 378 497 375
0.8 479 390 479 390 479 390 479 390 479 390 494 385 504 382 514 378 524 375
0.7 513 390 513 390 513 390 513 390 513 390 528 385 538 381 548 378 558 375
0.6 560 390 560 390 560 390 560 390 560 390 575 385 585 382 595 378 605 375
0.5 622 390 622 390 622 390 622 390 622 390 637 385 647 382 657 378 667 375
0.4 697 389 697 389 697 389 697 389 697 389 712 384 722 381 732 378 742 374
512Mb: x4, x8, x16 DDR2 SDRAM
Input Slew Rate Derating
PDF: 09005aef82f1e6e2
Rev. N 1/09 EN 69 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2004 Micron Technology, Inc. All rights reserved.
Figure 30: Nominal Slew Rate for tDS
Vref to AC
region
Vref to AC
region
Setup slew rate
rising signal
Setup slew rate
falling signal
Δ
TF
Δ
TR
Vref(dc)
- Vil(ac) MAX
ΔTF
=
Vih(ac) MIN -
Vref(dc)
ΔTR
=
Nominal
slew rate
Vss
DQS#1
DQS1
VddQ
Vih(dc) MIN
Vref(dc)
Vil(ac) MAX
Vil(dc) MAX
Vih(ac) MIN
tDH
tDS
Nominal
slew rate
tDH
tDS
Note: 1. DQS, DQS# signals must be monotonic between Vil(DC) MAX and Vih(DC) MIN.
Figure 31: Tangent Line for tDS
Δ
TF
Δ
TR
Setup slew rate
rising signal
Setup slew rate
falling signal
Tangent line (Vref[dc] - Vil[ac] MAX)
ΔTF
=Tangent line (Vih[ac] MIN - Vref[dc])
ΔTR
=
tDH
tDS
tDH
tDS
Vss
DQS#1
DQS1
VddQ
Vih(dc) MIN
Vref(dc)
Vil(ac) MAX
Vil(dc) MAX
Vih(ac) MIN
Nominal line
Tangent line
Nominal
line
Tangent line
Vref to AC
region
Vref to AC
region
Note: 1. DQS, DQS# signals must be monotonic between Vil(DC) MAX and Vih(DC) MIN.
512Mb: x4, x8, x16 DDR2 SDRAM
Input Slew Rate Derating
PDF: 09005aef82f1e6e2
Rev. N 1/09 EN 70 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2004 Micron Technology, Inc. All rights reserved.
Figure 32: Nominal Slew Rate for tDH
Hold slew rate
falling signal
Hold slew rate
rising signal
Vref(dc) -
Vil(dc) MAX
Δ
TR
=
Vih(dc) MIN -
Vref(dc)
Δ
TF
=
ΔTR ΔTF
Nominal
slew rate DC to Vref
region
tIH
tIS tIS
Vss
DQS#1
DQS1
VddQ
Vih(dc) MIN
Vref(dc)
Vil(ac) MAX
Vil(dc) MAX
Vih(ac) MIN
DC to Vref
region
Nominal
slew rate
tIH
Note: 1. DQS, DQS# signals must be monotonic between Vil(DC) MAX and Vih(DC) MIN.
Figure 33: Tangent Line for tDH
Tangent
line DC to Vref
region
tIH
tIS tIS
Vss
VddQ
Vih(dc) MIN
Vref(dc)
Vil(ac) MAX
Vil(dc) MAX
Vih(ac) MIN
DC to Vref
region Tangent
line
tIH
DQS1
DQS#1
Hold slew rate
falling signal
ΔTF
ΔTR
Tangent line (Vih[dc] MIN - Vref[dc])
ΔTF
=
Nominal
line
Hold slew rate
rising signal
Tangent line (Vref[dc] - Vil[dc] MAX)
ΔTR
=
Nominal
line
Note: 1. DQS, DQS# signals must be monotonic between Vil(DC) MAX and Vih(DC) MIN.
512Mb: x4, x8, x16 DDR2 SDRAM
Input Slew Rate Derating
PDF: 09005aef82f1e6e2
Rev. N 1/09 EN 71 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2004 Micron Technology, Inc. All rights reserved.
Figure 34: AC Input Test Signal Waveform Command/Address Balls
tISa
Logic levels
Vref levels
tIHatISatIHa
tISbtIHbtISbtIHb
CK#
CK
VddQ
Vih(ac) MIN
Vih(dc) MIN
Vref(dc)
Vil(dc) MIN
Vil(ac) MIN
VssQ
Vswing (MAX)
Figure 35: AC Input Test Signal Waveform for Data with DQS, DQS# (Differential)
DQS#
DQS
tDSatDHatDSatDHa
tDSbtDHbtDSbtDHb
Logic levels
Vref levels
Vref(dc)
Vil(dc) MAX
Vil(ac) MAX
VssQ
Vih(dc) MIN
Vih(ac) MIN
VddQ
Vswing (MAX)
512Mb: x4, x8, x16 DDR2 SDRAM
Input Slew Rate Derating
PDF: 09005aef82f1e6e2
Rev. N 1/09 EN 72 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2004 Micron Technology, Inc. All rights reserved.
Figure 36: AC Input Test Signal Waveform for Data with DQS (Single-Ended)
DQS
Vref
Vref(dc)
Vil(dc) MAX
Vil(ac) MAX
VssQ
Vih(dc) MIN
Vih(ac) MIN
VddQ
Vswing (MAX)
Logic levels
Vref levels
tDSatDHatDSatDHa
tDSbtDHbtDSbtDHb
Figure 37: AC Input Test Signal Waveform (Differential)
Vtr
Vswing
Vcp
VddQ
VssQ
Vix
Crossing point
512Mb: x4, x8, x16 DDR2 SDRAM
Input Slew Rate Derating
PDF: 09005aef82f1e6e2
Rev. N 1/09 EN 73 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2004 Micron Technology, Inc. All rights reserved.
Commands
Truth Tables
The following tables provide a quick reference of available DDR2 SDRAM commands,
including CKE power-down modes and bank-to-bank commands.
Table 36: Truth Table – DDR2 Commands
Notes: 1–3 apply to the entire table
Function
CKE
CS# RAS# CAS# WE#
BA2–
BA0
An–
A11 A10 A9–A0 Notes
Previous
Cycle
Current
Cycle
LOAD MODE H H L L L L BA OP code 4, 6
REFRESH H H L L L H X X X X
SELF REFRESH entry H L L L L H X X X X
SELF REFRESH exit L H H X X X X X X X 4, 7
L H H H
Single bank
PRECHARGE
H H L L H L BA X L X 6
All banks PRECHARGE H H L L H L X X H X
Bank ACTIVATE H H L L H H BA Row address 4
WRITE H H L H L L BA Column
address
L Column
address
4, 5,
6, 8
WRITE with auto
precharge
H H L H L L BA Column
address
H Column
address
4, 5,
6, 8
READ H H L H L H BA Column
address
L Column
address
4, 5,
6, 8
READ with auto
precharge
H H L H L H BA Column
address
H Column
address
4, 5,
6, 8
NO OPERATION H X L H H H X X X X
Device DESELECT H X H X X X X X X X
Power-down entry H L H X X X X X X X 9
L H H H
Power-down exit L H H X X X X X X X 9
L H H H
Notes: 1. All DDR2 SDRAM commands are defined by states of CS#, RAS#, CAS#, WE#, and CKE at
the rising edge of the clock.
2. The state of ODT does not affect the states described in this table. The ODT function is
not available during self refresh. See ODT Timing (page 133) for details.
3. “X” means “H or L” (but a defined logic level) for valid Idd measurements.
4. BA2 is only applicable for densities ≥1Gb.
512Mb: x4, x8, x16 DDR2 SDRAM
Commands
PDF: 09005aef82f1e6e2
Rev. N 1/09 EN 74 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2004 Micron Technology, Inc. All rights reserved.
5. An n is the most significant address bit for a given density and configuration. Some larg-
er address bits may be “Don’t Care” during column addressing, depending on density
and configuration.
6. Bank addresses (BA) determine which bank is to be operated upon. BA during a LOAD
MODE command selects which mode register is programmed.
7. SELF REFRESH exit is asynchronous.
8. Burst reads or writes at BL = 4 cannot be terminated or interrupted. See Figure 51
(page 102) and Figure 63 (page 113) for other restrictions and details.
9. The power-down mode does not perform any REFRESH operations. The duration of power-
down is limited by the refresh requirements outlined in the AC parametric section.
Table 37: Truth Table – Current State Bank n – Command to Bank n
Notes: 1–6 apply to the entire table
Current
State CS# RAS# CAS# WE# Command/Action Notes
Any H X X X DESELECT (NOP/continue previous operation)
L H H H NO OPERATION (NOP/continue previous operation)
Idle L L H H ACTIVATE (select and activate row)
L L L H REFRESH 7
L L L L LOAD MODE 7
Row active L H L H READ (select column and start READ burst) 8
L H L L WRITE (select column and start WRITE burst) 8
L L H L PRECHARGE (deactivate row in bank or banks) 9
Read (auto
precharge
disabled)
L H L H READ (select column and start new READ burst) 8
L H L L WRITE (select column and start WRITE burst) 8, 10
L L H L PRECHARGE (start PRECHARGE) 9
Write
(auto pre-
charge disa-
bled)
L H L H READ (select column and start READ burst) 8
L H L L WRITE (select column and start new WRITE burst) 8
L L H L PRECHARGE (start PRECHARGE) 9
Notes: 1. This table applies when CKEn - 1 was HIGH and CKEn is HIGH and after tXSNR has been
met (if the previous state was self refresh).
2. This table is bank-specific, except where noted (the current state is for a specific bank
and the commands shown are those allowed to be issued to that bank when in that
state). Exceptions are covered in the notes below.
3. Current state definitions:
Idle: The bank has been precharged, tRP has been met, and any READ burst is com-
plete.
Row
active:
A row in the bank has been activated, and tRCD has been met. No data bursts/
accesses and no register accesses are in progress.
Read: A READ burst has been initiated, with auto precharge disabled and has not
yet terminated.
Write: A WRITE burst has been initiated with auto precharge disabled and has not
yet terminated.
512Mb: x4, x8, x16 DDR2 SDRAM
Commands
PDF: 09005aef82f1e6e2
Rev. N 1/09 EN 75 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2004 Micron Technology, Inc. All rights reserved.
4. The following states must not be interrupted by a command issued to the same bank.
Issue DESELECT or NOP commands, or allowable commands to the other bank, on any
clock edge occurring during these states. Allowable commands to the other bank are
determined by its current state and this table, and according to Table 38 (page 77).
Precharge: Starts with registration of a PRECHARGE command and ends when
tRP is met. After tRP is met, the bank will be in the idle state.
Read with auto
precharge
enabled:
Starts with registration of a READ command with auto precharge
enabled and ends when tRP has been met. After tRP is met, the
bank will be in the idle state.
Row activate: Starts with registration of an ACTIVATE command and ends when
tRCD is met. After tRCD is met, the bank will be in the row active
state.
Write with auto
precharge
enabled:
Starts with registration of a WRITE command with auto precharge
enabled and ends when tRP has been met. After tRP is met, the
bank will be in the idle state.
5. The following states must not be interrupted by any executable command (DESELECT or
NOP commands must be applied on each positive clock edge during these states):
Refresh: Starts with registration of a REFRESH command and ends when tRFC is
met. After tRFC is met, the DDR2 SDRAM will be in the all banks idle
state.
Accessing
mode
register:
Starts with registration of the LOAD MODE command and ends when
tMRD has been met. After tMRD is met, the DDR2 SDRAM will be in
the all banks idle state.
Precharge all: Starts with registration of a PRECHARGE ALL command and ends
when tRP is met. After tRP is met, all banks will be in the idle state.
6. All states and sequences not shown are illegal or reserved.
7. Not bank-specific; requires that all banks are idle and bursts are not in progress.
8. READs or WRITEs listed in the Command/Action column include READs or WRITEs with
auto precharge enabled and READs or WRITEs with auto precharge disabled.
9. May or may not be bank-specific; if multiple banks are to be precharged, each must be
in a valid state for precharging.
10. A WRITE command may be applied after the completion of the READ burst.
512Mb: x4, x8, x16 DDR2 SDRAM
Commands
PDF: 09005aef82f1e6e2
Rev. N 1/09 EN 76 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2004 Micron Technology, Inc. All rights reserved.
Table 38: Truth Table – Current State Bank n – Command to Bank m
Notes: 1–6 apply to the entire table
Current State CS# RAS# CAS# WE# Command/Action Notes
Any H X X X DESELECT (NOP/continue previous operation)
L H H H NO OPERATION (NOP/continue previous operation)
Idle X X X X Any command otherwise allowed to bank m
Row
active, active,
or precharge
L L H H ACTIVATE (select and activate row)
L H L H READ (select column and start READ burst) 7
L H L L WRITE (select column and start WRITE burst) 7
L L H L PRECHARGE
Read (auto
precharge
disabled)
L L H H ACTIVATE (select and activate row)
L H L H READ (select column and start new READ burst) 7
L H L L WRITE (select column and start WRITE burst) 7, 8
L L H L PRECHARGE
Write (auto
precharge
disabled)
L L H H ACTIVATE (select and activate row)
L H L H READ (select column and start READ burst) 7, 9, 10
L H L L WRITE (select column and start new WRITE burst) 7
L L H L PRECHARGE
Read (with
auto
precharge)
L L H H ACTIVATE (select and activate row)
L H L H READ (select column and start new READ burst) 7
L H L L WRITE (select column and start WRITE burst) 7, 8
L L H L PRECHARGE
Write (with
auto
precharge)
L L H H ACTIVATE (select and activate row)
L H L H READ (select column and start READ burst) 7, 10
L H L L WRITE (select column and start new WRITE burst) 7
L L H L PRECHARGE
Notes: 1. This table applies when CKEn - 1 was HIGH and CKEn is HIGH and after tXSNR has been
met (if the previous state was self refresh).
2. This table describes an alternate bank operation, except where noted (the current state
is for bank n and the commands shown are those allowed to be issued to bank m, assum-
ing that bank m is in such a state that the given command is allowable). Exceptions are
covered in the notes below.
3. Current state definitions:
Idle: The bank has been precharged, tRP has been met, and any
READ burst is complete.
Row active: A row in the bank has been activated and tRCD has been met.
No data bursts/accesses and no register accesses are in progress.
Read: A READ burst has been initiated with auto precharge disabled
and has not yet terminated.
512Mb: x4, x8, x16 DDR2 SDRAM
Commands
PDF: 09005aef82f1e6e2
Rev. N 1/09 EN 77 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2004 Micron Technology, Inc. All rights reserved.
Write: A WRITE burst has been initiated with auto precharge disabled
and has not yet terminated.
READ with auto
precharge enabled/
WRITE with auto
precharge ena-
bled:
The READ with auto precharge enabled or WRITE with auto pre-
charge enabled states can each be broken into two parts: the
access period and the precharge period. For READ with auto pre-
charge, the precharge period is defined as if the same burst was
executed with auto precharge disabled and then followed with
the earliest possible PRECHARGE command that still accesses all
of the data in the burst. For WRITE with auto precharge, the pre-
charge period begins when tWR ends, with tWR measured as if
auto precharge was disabled. The access period starts with regis-
tration of the command and ends where the precharge period
(or tRP) begins. This device supports concurrent auto precharge
such that when a READ with auto precharge is enabled or a
WRITE with auto precharge is enabled, any command to other
banks is allowed, as long as that command does not interrupt
the read or write data transfer already in process. In either case,
all other related limitations apply (contention between read da-
ta and write data must be avoided).
The minimum delay from a READ or WRITE command with auto precharge enabled to
a command to a different bank is summarized in Table 39 (page 78).
4. REFRESH and LOAD MODE commands may only be issued when all banks are idle.
5. Not used.
6. All states and sequences not shown are illegal or reserved.
7. READs or WRITEs listed in the Command/Action column include READs or WRITEs with
auto precharge enabled and READs or WRITEs with auto precharge disabled.
8. A WRITE command may be applied after the completion of the READ burst.
9. Requires appropriate DM.
10. The number of clock cycles required to meet tWTR is either two or tWTR/tCK, whichever
is greater.
Table 39: Minimum Delay with Auto Precharge Enabled
From Command (Bank n) To Command (Bank m)
Minimum Delay
(with Concurrent Auto Precharge) Units
WRITE with auto precharge READ or READ with auto precharge (CL - 1) + (BL/2) + tWTR tCK
WRITE or WRITE with auto precharge (BL/2) tCK
PRECHARGE or ACTIVATE 1 tCK
READ with auto precharge READ or READ with auto precharge (BL/2) tCK
WRITE or WRITE with auto precharge (BL/2) + 2 tCK
PRECHARGE or ACTIVATE 1 tCK
DESELECT
The DESELECT function (CS# HIGH) prevents new commands from being executed by
the DDR2 SDRAM. The DDR2 SDRAM is effectively deselected. Operations already in
progress are not affected. DESELECT is also referred to as COMMAND INHIBIT.
512Mb: x4, x8, x16 DDR2 SDRAM
Commands
PDF: 09005aef82f1e6e2
Rev. N 1/09 EN 78 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2004 Micron Technology, Inc. All rights reserved.
NO OPERATION (NOP)
The NO OPERATION (NOP) command is used to instruct the selected DDR2 SDRAM to
perform a NOP (CS# is LOW; RAS#, CAS#, and WE are HIGH). This prevents unwanted
commands from being registered during idle or wait states. Operations already in pro-
gress are not affected.
LOAD MODE (LM)
The mode registers are loaded via bank address and address inputs. The bank address
balls determine which mode register will be programmed. See Mode Register (MR)
(page 80). The LM command can only be issued when all banks are idle, and a subse-
quent executable command cannot be issued until tMRD is met.
ACTIVATE
The ACTIVATE command is used to open (or activate) a row in a particular bank for a
subsequent access. The value on the bank address inputs determines the bank, and the
address inputs select the row. This row remains active (or open) for accesses until a pre-
charge command is issued to that bank. A precharge command must be issued before
opening a different row in the same bank.
READ
The READ command is used to initiate a burst read access to an active row. The value
on the bank address inputs determine the bank, and the address provided on address
inputs A0–Ai (where Ai is the most significant column address bit for a given configura-
tion) selects the starting column location. The value on input A10 determines whether
or not auto precharge is used. If auto precharge is selected, the row being accessed will
be precharged at the end of the read burst; if auto precharge is not selected, the row will
remain open for subsequent accesses.
DDR2 SDRAM also supports the AL feature, which allows a READ or WRITE command
to be issued prior to tRCD (MIN) by delaying the actual registration of the READ/WRITE
command to the internal device by AL clock cycles.
WRITE
The WRITE command is used to initiate a burst write access to an active row. The value
on the bank select inputs selects the bank, and the address provided on inputs A0–Ai
(where Ai is the most significant column address bit for a given configuration) selects
the starting column location. The value on input A10 determines whether or not auto
precharge is used. If auto precharge is selected, the row being accessed will be pre-
charged at the end of the WRITE burst; if auto precharge is not selected, the row will
remain open for subsequent accesses.
DDR2 SDRAM also supports the AL feature, which allows a READ or WRITE command
to be issued prior to tRCD (MIN) by delaying the actual registration of the READ/WRITE
command to the internal device by AL clock cycles.
Input data appearing on the DQ is written to the memory array subject to the DM input
logic level appearing coincident with the data. If a given DM signal is registered LOW,
the corresponding data will be written to memory; if the DM signal is registered HIGH,
the corresponding data inputs will be ignored, and a WRITE will not be executed to that
byte/column location (see Figure 68 (page 118)).
512Mb: x4, x8, x16 DDR2 SDRAM
Commands
PDF: 09005aef82f1e6e2
Rev. N 1/09 EN 79 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2004 Micron Technology, Inc. All rights reserved.
PRECHARGE
The PRECHARGE command is used to deactivate the open row in a particular bank or
the open row in all banks. The bank(s) will be available for a subsequent row activation
a specified time (tRP) after the PRECHARGE command is issued, except in the case of
concurrent auto precharge, where a READ or WRITE command to a different bank is
allowed as long as it does not interrupt the data transfer in the current bank and does
not violate any other timing parameters. After a bank has been precharged, it is in the
idle state and must be activated prior to any READ or WRITE commands being issued to
that bank. A PRECHARGE command is allowed if there is no open row in that bank (idle
state) or if the previously open row is already in the process of precharging. However,
the precharge period will be determined by the last PRECHARGE command issued to
the bank.
REFRESH
REFRESH is used during normal operation of the DDR2 SDRAM and is analogous to CAS#-
before-RAS# (CBR) REFRESH. All banks must be in the idle mode prior to issuing a
REFRESH command. This command is nonpersistent, so it must be issued each time a
refresh is required. The addressing is generated by the internal refresh controller. This
makes the address bits a “Don’t Care” during a REFRESH command.
SELF REFRESH
The SELF REFRESH command can be used to retain data in the DDR2 SDRAM, even if
the rest of the system is powered down. When in the self refresh mode, the DDR2
SDRAM retains data without external clocking. All power supply inputs (including Vref)
must be maintained at valid levels upon entry/exit and during SELF REFRESH operation.
The SELF REFRESH command is initiated like a REFRESH command except CKE is
LOW. The DLL is automatically disabled upon entering self refresh and is automatically
enabled upon exiting self refresh.
Mode Register (MR)
The mode register is used to define the specific mode of operation of the DDR2 SDRAM.
This definition includes the selection of a burst length, burst type, CAS latency, operat-
ing mode, DLL RESET, write recovery, and power-down mode, as shown in Figure 38
(page 81). Contents of the mode register can be altered by re-executing the LOAD
MODE (LM) command. If the user chooses to modify only a subset of the MR variables,
all variables must be programmed when the command is issued.
The MR is programmed via the LM command and will retain the stored information
until it is programmed again or until the device loses power (except for bit M8, which is
self-clearing). Reprogramming the mode register will not alter the contents of the mem-
ory array, provided it is performed correctly.
The LM command can only be issued (or reissued) when all banks are in the precharged
state (idle state) and no bursts are in progress. The controller must wait the specified
time tMRD before initiating any subsequent operations such as an ACTIVATE com-
mand. Violating either of these requirements will result in an unspecified operation.
512Mb: x4, x8, x16 DDR2 SDRAM
Mode Register (MR)
PDF: 09005aef82f1e6e2
Rev. N 1/09 EN 80 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2004 Micron Technology, Inc. All rights reserved.
Burst Length
Burst length is defined by bits M0–M2, as shown in Figure 38 (page 81). Read and
write accesses to the DDR2 SDRAM are burst-oriented, with the burst length being pro-
grammable to either four or eight. The burst length determines the maximum number
of column locations that can be accessed for a given READ or WRITE command.
When a READ or WRITE command is issued, a block of columns equal to the burst
length is effectively selected. All accesses for that burst take place within this block,
meaning that the burst will wrap within the block if a boundary is reached. The block is
uniquely selected by A2–Ai when BL = 4 and by A3–Ai when BL = 8 (where Ai is the most
significant column address bit for a given configuration). The remaining (least signifi-
cant) address bit(s) is (are) used to select the starting location within the block. The
programmed burst length applies to both read and write bursts.
Figure 38: MR Definition
Burst Length
CAS#
BTPD
A9 A7 A6 A5 A4 A3A8 A2 A1 A0
Mode Register (Mx)
Address Bus
9 7 6 5 4 38 2 1 0
A10A12 A11BA0
BA1
101112n
0
0
14
Burst Length
Reserved
Reserved
4
8
Reserved
Reserved
Reserved
Reserved
M0
0
1
0
1
0
1
0
1
M1
0
0
1
1
0
0
1
1
M2
0
0
0
0
1
1
1
1
0
1
Burst Type
Sequential
Interleaved
M3
CAS Latency (CL)
Reserved
Reserved
Reserved
3
4
5
6
7
M4
0
1
0
1
0
1
0
1
M5
0
0
1
1
0
0
1
1
M6
0
0
0
0
1
1
1
1
0
1
Mode
Normal
Test
M7
15
DLL TM
0
1
DLL Reset
No
Yes
M8
Write Recovery
Reserved
2
3
4
5
6
7
8
M9
0
1
0
1
0
1
0
1
M10
0
0
1
1
0
0
1
1
M11
0
0
0
0
1
1
1
1
WR
An2
MR
M14
0
1
0
1
Mode Register Definition
Mode register (MR)
Extended mode register (EMR)
Extended mode register (EMR2)
Extended mode register (EMR3)
M15
0
0
1
1
M12
0
1
PD Mode
Fast exit
(normal)
Slow exit
(low power)
Latency
16
BA21
Notes: 1. M16 (BA2) is only applicable for densities ≥1Gb, reserved for future use, and must be
programmed to “0.”
2. Mode bits (Mn) with corresponding address balls (An) greater than M12 (A12) are re-
served for future use and must be programmed to “0.”
3. Not all listed WR and CL options are supported in any individual speed grade.
Burst Type
Accesses within a given burst may be programmed to be either sequential or inter-
leaved. The burst type is selected via bit M3, as shown in Figure 38 (page 81). The
ordering of accesses within a burst is determined by the burst length, the burst type,
512Mb: x4, x8, x16 DDR2 SDRAM
Mode Register (MR)
PDF: 09005aef82f1e6e2
Rev. N 1/09 EN 81 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2004 Micron Technology, Inc. All rights reserved.
and the starting column address, as shown in Table 40 (page 83). DDR2 SDRAM sup-
ports 4-bit burst mode and 8-bit burst mode only. For 8-bit burst mode, full interleaved
address ordering is supported; however, sequential address ordering is nibble-based.
512Mb: x4, x8, x16 DDR2 SDRAM
Mode Register (MR)
PDF: 09005aef82f1e6e2
Rev. N 1/09 EN 82 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2004 Micron Technology, Inc. All rights reserved.
Table 40: Burst Definition
Burst Length Starting Column Address
(A2, A1, A0)
Order of Accesses Within a Burst
Burst Type = Sequential Burst Type = Interleaved
4 0 0 0, 1, 2, 3 0, 1, 2, 3
0 1 1, 2, 3, 0 1, 0, 3, 2
1 0 2, 3, 0, 1 2, 3, 0, 1
1 1 3, 0, 1, 2 3, 2, 1, 0
8 0 0 0 0, 1, 2, 3, 4, 5, 6, 7 0, 1, 2, 3, 4, 5, 6, 7
0 0 1 1, 2, 3, 0, 5, 6, 7, 4 1, 0, 3, 2, 5, 4, 7, 6
0 1 0 2, 3, 0, 1, 6, 7, 4, 5 2, 3, 0, 1, 6, 7, 4, 5
0 1 1 3, 0, 1, 2, 7, 4, 5, 6 3, 2, 1, 0, 7, 6, 5, 4
1 0 0 4, 5, 6, 7, 0, 1, 2, 3 4, 5, 6, 7, 0, 1, 2, 3
1 0 1 5, 6, 7, 4, 1, 2, 3, 0 5, 4, 7, 6, 1, 0, 3, 2
1 1 0 6, 7, 4, 5, 2, 3, 0, 1 6, 7, 4, 5, 2, 3, 0, 1
1 1 1 7, 4, 5, 6, 3, 0, 1, 2 7, 6, 5, 4, 3, 2, 1, 0
Operating Mode
The normal operating mode is selected by issuing a command with bit M7 set to “0,”
and all other bits set to the desired values, as shown in Figure 38 (page 81). When bit M7
is “1,” no other bits of the mode register are programmed. Programming bit M7 to “1”
places the DDR2 SDRAM into a test mode that is only used by the manufacturer and
should not be used. No operation or functionality is guaranteed if M7 bit is “1.”
DLL RESET
DLL RESET is defined by bit M8, as shown in Figure 38 (page 81). Programming bit M8
to “1” will activate the DLL RESET function. Bit M8 is self-clearing, meaning it returns
back to a value of “0” after the DLL RESET function has been issued.
Anytime the DLL RESET function is used, 200 clock cycles must occur before a READ
command can be issued to allow time for the internal clock to be synchronized with the
external clock. Failing to wait for synchronization to occur may result in a violation of
the tAC or tDQSCK parameters.
512Mb: x4, x8, x16 DDR2 SDRAM
Mode Register (MR)
PDF: 09005aef82f1e6e2
Rev. N 1/09 EN 83 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2004 Micron Technology, Inc. All rights reserved.
Write Recovery
Write recovery (WR) time is defined by bits M9–M11, as shown in Figure 38 (page 81).
The WR register is used by the DDR2 SDRAM during WRITE with auto precharge opera-
tion. During WRITE with auto precharge operation, the DDR2 SDRAM delays the inter-
nal auto precharge operation by WR clocks (programmed in bits M9–M11) from the last
data burst. An example of WRITE with auto precharge is shown in Figure 67 (page 117).
WR values of 2, 3, 4, 5, 6, 7, or 8 clocks may be used for programming bits M9–M11. The
user is required to program the value of WR, which is calculated by dividing tWR (in
nanoseconds) by tCK (in nanoseconds) and rounding up a noninteger value to the next
integer; WR (cycles) = tWR (ns)/tCK (ns). Reserved states should not be used as an un-
known operation or incompatibility with future versions may result.
Power-Down Mode
Active power-down (PD) mode is defined by bit M12, as shown in Figure 38 (page 81).
PD mode enables the user to determine the active power-down mode, which deter-
mines performance versus power savings. PD mode bit M12 does not apply to pre-
charge PD mode.
When bit M12 = 0, standard active PD mode, or “fast-exit” active PD mode, is enabled.
The tXARD parameter is used for fast-exit active PD exit timing. The DLL is expected to
be enabled and running during this mode.
When bit M12 = 1, a lower-power active PD mode, or “slow-exit” active PD mode, is
enabled. The tXARDS parameter is used for slow-exit active PD exit timing. The DLL can
be enabled but “frozen” during active PD mode because the exit-to-READ command
timing is relaxed. The power difference expected between Idd3P normal and Idd3P low-
power mode is defined in the DDR2 Idd Specifications and Conditions table.
512Mb: x4, x8, x16 DDR2 SDRAM
Mode Register (MR)
PDF: 09005aef82f1e6e2
Rev. N 1/09 EN 84 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2004 Micron Technology, Inc. All rights reserved.
CAS Latency (CL)
The CAS latency (CL) is defined by bits M4–M6, as shown in Figure 38 (page 81). CL is
the delay, in clock cycles, between the registration of a READ command and the availa-
bility of the first bit of output data. The CL can be set to 3, 4, 5, 6, or 7 clocks, depending
on the speed grade option being used.
DDR2 SDRAM does not support any half-clock latencies. Reserved states should not be
used as an unknown operation otherwise incompatibility with future versions may result.
DDR2 SDRAM also supports a feature called posted CAS additive latency (AL). This fea-
ture allows the READ command to be issued prior to tRCD (MIN) by delaying the
internal command to the DDR2 SDRAM by AL clocks. The AL feature is described in
further detail in Posted CAS Additive Latency (AL) (page 88).
Examples of CL = 3 and CL = 4 are shown in Figure 39 (page 85); both assume AL = 0. If
a READ command is registered at clock edge n, and the CL is m clocks, the data will be
available nominally coincident with clock edge n + m (this assumes AL = 0).
Figure 39: CL
DO
n + 3
DO
n + 2
DO
n + 1
CK
CK#
Command
DQ
DQS, DQS#
CL = 3 (AL = 0)
READ
T0 T1 T2
Don’t careTransitioning data
NOP NOP NOP
DO
n
T3 T4 T5
NOP NOP
T6
NOP
DO
n + 3
DO
n + 2
DO
n + 1
CK
CK#
Command
DQ
DQS, DQS#
CL = 4 (AL = 0)
READ
T0 T1 T2
NOP NOP NOP
DO
n
T3 T4 T5
NOP NOP
T6
NOP
Notes: 1. BL = 4.
2. Posted CAS# additive latency (AL) = 0.
3. Shown with nominal tAC, tDQSCK, and tDQSQ.
512Mb: x4, x8, x16 DDR2 SDRAM
Mode Register (MR)
PDF: 09005aef82f1e6e2
Rev. N 1/09 EN 85 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2004 Micron Technology, Inc. All rights reserved.
Extended Mode Register (EMR)
The extended mode register controls functions beyond those controlled by the mode
register; these additional functions are DLL enable/disable, output drive strength, on-
die termination (ODT), posted AL, off-chip driver impedance calibration (OCD), DQS#
enable/disable, RDQS/RDQS# enable/disable, and output disable/enable. These func-
tions are controlled via the bits shown in Figure 40 (page 86). The EMR is program-
med via the LM command and will retain the stored information until it is programmed
again or the device loses power. Reprogramming the EMR will not alter the contents of
the memory array, provided it is performed correctly.
The EMR must be loaded when all banks are idle and no bursts are in progress, and the
controller must wait the specified time tMRD before initiating any subsequent opera-
tion. Violating either of these requirements could result in an unspecified operation.
Figure 40: EMR Definition
DLLPosted CAS# RttOut
A9 A7 A6 A5 A4 A3A8 A2 A1 A0
Extended mode
register (Ex)
Address bus
9 7 6 5 4 38 2 1 0
A10A12BA0BA1
101112n
0
14
E1
0
1
Output Drive Strength
Full
Reduced
Posted CAS# Additive Latency (AL)3
0
1
2
3
4
5
6
Reserved
E3
0
1
0
1
0
1
0
1
E4
0
0
1
1
0
0
1
1
E5
0
0
0
0
1
1
1
1
0
1
DLL Enable
Enable (normal)
Disable (test/debug)
E0
15
E11
0
1
RDQS Enable
No
Yes
OCD Program
An2
ODS
Rtt
DQS#
E10
0
1
DQS# Enable
Enable
Disable
RDQS
Rtt (Nominal)
Rtt disabled
75Ω
150Ω
50Ω
E2
0
1
0
1
E6
0
0
1
1
0
1
Outputs
Enabled
Disabled
E12
0
1
0
1
Mode Register Set
Mode register (MR)
Extended mode register (EMR)
Extended mode register (EMR2)
Extended mode register (EMR3)
E15
0
0
1
1
E14
MRS
BA21
16
0
OCD Operation4
OCD exit
Reserved
Reserved
Reserved
Enable OCD defaults
E7
0
1
0
0
1
E8
0
0
1
0
1
E9
0
0
0
1
1
Notes: 1. E16 (BA2) is only applicable for densities ≥1Gb, reserved for future use, and must be pro-
grammed to “0.”
2. Mode bits (En) with corresponding address balls (An) greater than E12 (A12) are re-
served for future use and must be programmed to “0.”
3. Not all listed AL options are supported in any individual speed grade.
4. As detailed in the Initialization (page 92) section notes, during initialization of the
OCD operation, all three bits must be set to “1” for the OCD default state, then set to
“0” before initialization is finished.
512Mb: x4, x8, x16 DDR2 SDRAM
Extended Mode Register (EMR)
PDF: 09005aef82f1e6e2
Rev. N 1/09 EN 86 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2004 Micron Technology, Inc. All rights reserved.
DLL Enable/Disable
The DLL may be enabled or disabled by programming bit E0 during the LM command,
as shown in Figure 40 (page 86). These specifications are applicable when the DLL is
enabled for normal operation. DLL enable is required during power-up initialization
and upon returning to normal operation after having disabled the DLL for the purpose
of debugging or evaluation. Enabling the DLL should always be followed by resetting
the DLL using the LM command.
The DLL is automatically disabled when entering SELF REFRESH operation and is auto-
matically re-enabled and reset upon exit of SELF REFRESH operation.
Anytime the DLL is enabled (and subsequently reset), 200 clock cycles must occur be-
fore a READ command can be issued to allow time for the internal clock to synchronize
with the external clock. Failing to wait for synchronization to occur may result in a viola-
tion of the tAC or tDQSCK parameters.
Anytime the DLL is disabled and the device is operated below 25 MHz, any AUTO RE-
FRESH command should be followed by a PRECHARGE ALL command.
Output Drive Strength
The output drive strength is defined by bit E1, as shown in Figure 40 (page 86). The nor-
mal drive strength for all outputs is specified to be SSTL_18. Programming bit E1 = 0
selects normal (full strength) drive strength for all outputs. Selecting a reduced drive
strength option (E1 = 1) will reduce all outputs to approximately 45 to 60 percent of the
SSTL_18 drive strength. This option is intended for the support of lighter load and/or
point-to-point environments.
DQS# Enable/Disable
The DQS# ball is enabled by bit E10. When E10 = 0, DQS# is the complement of the
differential data strobe pair DQS/DQS#. When disabled (E10 = 1), DQS is used in a single-
ended mode and the DQS# ball is disabled. When disabled, DQS# should be left float-
ing; however, it may be tied to ground via a 20Ω to 10kΩ resistor. This function is also
used to enable/disable RDQS#. If RDQS is enabled (E11 = 1) and DQS# is enabled (E10 =
0), then both DQS# and RDQS# will be enabled.
RDQS Enable/Disable
The RDQS ball is enabled by bit E11, as shown in Figure 40 (page 86). This feature is
only applicable to the x8 configuration. When enabled (E11 = 1), RDQS is identical in
function and timing to data strobe DQS during a READ. During a WRITE operation,
RDQS is ignored by the DDR2 SDRAM.
Output Enable/Disable
The OUTPUT ENABLE function is defined by bit E12, as shown in Figure 40 (page 86).
When enabled (E12 = 0), all outputs (DQ, DQS, DQS#, RDQS, RDQS#) function normal-
ly. When disabled (E12 = 1), all outputs (DQ, DQS, DQS#, RDQS, RDQS#) are disabled,
thus removing output buffer current. The output disable feature is intended to be used
during Idd characterization of read current.
512Mb: x4, x8, x16 DDR2 SDRAM
Extended Mode Register (EMR)
PDF: 09005aef82f1e6e2
Rev. N 1/09 EN 87 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2004 Micron Technology, Inc. All rights reserved.
On-Die Termination (ODT)
ODT effective resistance, Rtt (EFF), is defined by bits E2 and E6 of the EMR, as shown in
Figure 40 (page 86). The ODT feature is designed to improve signal integrity of the mem-
ory channel by allowing the DDR2 SDRAM controller to independently turn on/off ODT
for any or all devices. Rtt effective resistance values of 50Ω, 75Ω, and 150Ω are selecta-
ble and apply to each DQ, DQS/DQS#, RDQS/RDQS#, UDQS/UDQS#, LDQS/LDQS#,
DM, and UDM/LDM signals. Bits (E6, E2) determine what ODT resistance is enabled by
turning on/off “sw1,” “sw2,” or “sw3.” The ODT effective resistance value is selected by
enabling switch “sw1,” which enables all R1 values that are 150Ω each, enabling an ef-
fective resistance of 75Ω (Rtt2 [EFF] = R2/2). Similarly, if “sw2” is enabled, all R2 values
that are 300Ω each, enable an effective ODT resistance of 150Ω (Rtt2 [EFF] = R2/2).
Switch “sw3” enables R1 values of 100Ω, enabling effective resistance of 50Ω. Reserved
states should not be used, as an unknown operation or incompatibility with future ver-
sions may result.
The ODT control ball is used to determine when Rtt (EFF) is turned on and off, assum-
ing ODT has been enabled via bits E2 and E6 of the EMR. The ODT feature and ODT
input ball are only used during active, active power-down (both fast-exit and slow-exit
modes), and precharge power-down modes of operation.
ODT must be turned off prior to entering self refresh mode. During power-up and initi-
alization of the DDR2 SDRAM, ODT should be disabled until the EMR command is
issued. This will enable the ODT feature, at which point the ODT ball will determine the
Rtt (EFF) value. Anytime the EMR enables the ODT function, ODT may not be driven
HIGH until eight clocks after the EMR has been enabled (see Figure 83 (page 134) for
ODT timing diagrams).
Off-Chip Driver (OCD) Impedance Calibration
The OFF-CHIP DRIVER function is an optional DDR2 JEDEC feature not supported by
Micron and thereby must be set to the default state. Enabling OCD beyond the default
settings will alter the I/O drive characteristics and the timing and output I/O specifica-
tions will no longer be valid (see Initialization (page 92) for proper setting of OCD
defaults).
Posted CAS Additive Latency (AL)
Posted CAS additive latency (AL) is supported to make the command and data bus effi-
cient for sustainable bandwidths in DDR2 SDRAM. Bits E3–E5 define the value of AL, as
shown in Figure 40 (page 86). Bits E3–E5 allow the user to program the DDR2 SDRAM
with an AL of 0, 1, 2, 3, 4, 5, or 6 clocks. Reserved states should not be used as an un-
known operation or incompatibility with future versions may result.
In this operation, the DDR2 SDRAM allows a READ or WRITE command to be issued
prior to tRCD (MIN) with the requirement that AL ≤ tRCD (MIN). A typical application
using this feature would set AL = tRCD (MIN) - 1 × tCK. The READ or WRITE command
is held for the time of the AL before it is issued internally to the DDR2 SDRAM device.
RL is controlled by the sum of AL and CL; RL = AL + CL. WRITE latency (WL) is equal to
RL minus one clock; WL = AL + CL - 1 × tCK. An example of RL is shown in Figure 41
(page 89). An example of a WL is shown in Figure 42 (page 89).
512Mb: x4, x8, x16 DDR2 SDRAM
Extended Mode Register (EMR)
PDF: 09005aef82f1e6e2
Rev. N 1/09 EN 88 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2004 Micron Technology, Inc. All rights reserved.
Figure 41: READ Latency
DO
n + 3
DO
n + 2
DO
n + 1
CK
CK#
Command
DQ
DQS, DQS#
AL = 2
ACTIVE n
T0 T1 T2
Don’t CareTransitioning Data
READ nNOP NOP
DO
n
T3 T4 T5
NOP
T6
NOP
T7 T8
NOP NOP
CL = 3
RL = 5
tRCD (MIN)
NOP
Notes: 1. BL = 4.
2. Shown with nominal tAC, tDQSCK, and tDQSQ.
3. RL = AL + CL = 5.
Figure 42: WRITE Latency
CK
CK#
Command
DQ
DQS, DQS#
ACTIVE n
T0 T1 T2
Don’t CareTransitioning Data
NOP NOP
T3 T4 T5
NOP
T6
NOP
DI
n + 3
DI
n + 2
DI
n + 1
WL = AL + CL - 1 = 4
T7
NOP
DI
n
tRCD (MIN)
NOP
AL = 2 CL - 1 = 2
WRITE n
Notes: 1. BL = 4.
2. CL = 3.
3. WL = AL + CL - 1 = 4.
512Mb: x4, x8, x16 DDR2 SDRAM
Extended Mode Register (EMR)
PDF: 09005aef82f1e6e2
Rev. N 1/09 EN 89 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2004 Micron Technology, Inc. All rights reserved.
Extended Mode Register 2 (EMR2)
The extended mode register 2 (EMR2) controls functions beyond those controlled by
the mode register. Currently all bits in EMR2 are reserved, except for E7, which is used
in commercial or high-temperature operations, as shown in Figure 43 (page 90). The
EMR2 is programmed via the LM command and will retain the stored information until
it is programmed again or until the device loses power. Reprogramming the EMR will
not alter the contents of the memory array, provided it is performed correctly.
Bit E7 (A7) must be programmed as “1” to provide a faster refresh rate on IT and AT
devices if TC exceeds 85°C.
EMR2 must be loaded when all banks are idle and no bursts are in progress, and the
controller must wait the specified time tMRD before initiating any subsequent opera-
tion. Violating either of these requirements could result in an unspecified operation.
Figure 43: EMR2 Definition
A9 A7 A6 A5 A4 A3A8 A2 A1 A0
Extended mode
register (Ex)
Address bus
9 7 6 5 4 38 2 1 0
A10A12 A11BA0BA1
101112n
0
1415
An2
E14
0
1
0
1
Mode Register Set
Mode register (MR)
Extended mode register (EMR)
Extended mode register (EMR2)
Extended mode register (EMR3)
E15
0
0
1
1
MRS 00 0 0 0 SRT 0 0 0 0 0 0 0
BA21
16
0
E7
0
1
SRT Enable
1X refresh rate (0°C to 85°C)
2X refresh rate (>85°C)
Notes: 1. E16 (BA2) is only applicable for densities ≥1Gb, reserved for future use, and must be pro-
grammed to “0.”
2. Mode bits (En) with corresponding address balls (An) greater than E12 (A12) are re-
served for future use and must be programmed to “0.”
512Mb: x4, x8, x16 DDR2 SDRAM
Extended Mode Register 2 (EMR2)
PDF: 09005aef82f1e6e2
Rev. N 1/09 EN 90 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2004 Micron Technology, Inc. All rights reserved.
Extended Mode Register 3 (EMR3)
The extended mode register 3 (EMR3) controls functions beyond those controlled by
the mode register. Currently all bits in EMR3 are reserved, as shown in Figure 44
(page 91). The EMR3 is programmed via the LM command and will retain the stored
information until it is programmed again or until the device loses power. Reprogram-
ming the EMR will not alter the contents of the memory array, provided it is performed
correctly.
EMR3 must be loaded when all banks are idle and no bursts are in progress, and the
controller must wait the specified time tMRD before initiating any subsequent opera-
tion. Violating either of these requirements could result in an unspecified operation.
Figure 44: EMR3 Definition
E14
0
1
0
1
Mode Register Set
Mode register (MR)
Extended mode register (EMR)
Extended mode register (EMR2)
Extended mode register (EMR3)
E15
0
0
1
1
A9 A7 A6 A5 A4 A3A8 A2 A1 A0
Extended mode
register (Ex)
Address bus
9 7 6 5 4 38 2 1 0
A10A12 A11
BA0BA1
101112n
0
1415
An2
MRS 0 0 0 0 0 0 0 0 0 0 00 0
BA21
16
0
Notes: 1. E16 (BA2) is only applicable for densities ≥1Gb, is reserved for future use, and must be
programmed to “0.”
2. Mode bits (En) with corresponding address balls (An) greater than E12 (A12) are re-
served for future use and must be programmed to “0.”
512Mb: x4, x8, x16 DDR2 SDRAM
Extended Mode Register 3 (EMR3)
PDF: 09005aef82f1e6e2
Rev. N 1/09 EN 91 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2004 Micron Technology, Inc. All rights reserved.
Initialization
DDR2 SDRAM must be powered up and initialized in a predefined manner. Operational
procedures other than those specified may result in undefined operation. Figure 45
(page 93) illustrates, and the notes outline, the sequence required for power-up and
initialization.
512Mb: x4, x8, x16 DDR2 SDRAM
Initialization
PDF: 09005aef82f1e6e2
Rev. N 1/09 EN 92 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2004 Micron Technology, Inc. All rights reserved.
Notes: 1. Applying power; if CKE is maintained below 0.2 × VddQ, outputs remain disabled. To
guarantee Rtt (ODT resistance) is off, Vref must be valid and a low level must be applied
to the ODT ball (all other inputs may be undefined; I/Os and outputs must be less than
VddQ during voltage ramp time to avoid DDR2 SDRAM device latch-up). Vtt is not ap-
plied directly to the device; however, tVTD should be ≥0 to avoid device latch-up. At
least one of the following two sets of conditions (A or B) must be met to obtain a stable
supply state (stable supply defined as Vdd, VddL, VddQ, Vref, and Vtt are between their
minimum and maximum values as stated in Table 12 (page 46)):
A. Single power source: The Vdd voltage ramp from 300mV to Vdd (MIN) must take no
longer than 200ms; during the Vdd voltage ramp, |Vdd - VddQ| ≤ 0.3V. Once supply volt-
age ramping is complete (when VddQ crosses Vdd [MIN]), Table 12 (page 46) specifica-
tions apply.
•Vdd, VddL, and VddQ are driven from a single power converter output
•Vtt is limited to 0.95V MAX
•Vref tracks VddQ/2; Vref must be within ±0.3V with respect to VddQ/2 during supply
ramp time; does not need to be satisfied when ramping power down
•VddQ ≥ Vref at all times
B. Multiple power sources: Vdd ≥ VddL ≥ VddQ must be maintained during supply volt-
age ramping, for both AC and DC levels, until supply voltage ramping completes (VddQ
crosses Vdd [MIN]). Once supply voltage ramping is complete, Table 12 (page 46) specifi-
cations apply.
•Apply Vdd and VddL before or at the same time as VddQ; Vdd/VddL voltage ramp
time must be ≤ 200ms from when Vdd ramps from 300mV to Vdd (MIN)
•Apply VddQ before or at the same time as Vtt; the VddQ voltage ramp time from
when Vdd (MIN) is achieved to when VddQ (MIN) is achieved must be ≤ 500ms; while
Vdd is ramping, current can be supplied from Vdd through the device to VddQ
•Vref must track VddQ/2; Vref must be within ±0.3V with respect to VddQ/2 during sup-
ply ramp time; VddQ ≥ Vref must be met at all times; does not need to be satisfied
when ramping power down
•Apply Vtt; the Vtt voltage ramp time from when VddQ (MIN) is achieved to when Vtt
(MIN) is achieved must be no greater than 500ms
2. CKE requires LVCMOS input levels prior to state T0 to ensure DQs are High-Z during de-
vice power-up prior to Vref being stable. After state T0, CKE is required to have SSTL_18
input levels. Once CKE transitions to a high level, it must stay HIGH for the duration of
the initialization sequence.
3. For a minimum of 200µs after stable power and clock (CK, CK#), apply NOP or DESELECT
commands, then take CKE HIGH.
4. Wait a minimum of 400ns then issue a PRECHARGE ALL command.
5. Issue a LOAD MODE command to the EMR(2). To issue an EMR(2) command, provide
LOW to BA0, and provide HIGH to BA1; set register E7 to “0” or “1” to select appropri-
ate self refresh rate; remaining EMR(2) bits must be “0” (see Extended Mode Register 2
(EMR2) (page 90) for all EMR(2) requirements).
6. Issue a LOAD MODE command to the EMR(3). To issue an EMR(3) command, provide
HIGH to BA0 and BA1; remaining EMR(3) bits must be “0.” Extended Mode Register 3
(EMR3) (page 91) for all EMR(3) requirements.
7. Issue a LOAD MODE command to the EMR to enable DLL. To issue a DLL ENABLE com-
mand, provide LOW to BA1 and A0; provide HIGH to BA0; bits E7, E8, and E9 can be set
to “0” or “1;” Micron recommends setting them to “0;” remaining EMR bits must be
“0.” Extended Mode Register (EMR) (page 86) for all EMR requirements.
8. Issue a LOAD MODE command to the MR for DLL RESET. 200 cycles of clock input is re-
quired to lock the DLL. To issue a DLL RESET, provide HIGH to A8 and provide LOW to
512Mb: x4, x8, x16 DDR2 SDRAM
Initialization
PDF: 09005aef82f1e6e2
Rev. N 1/09 EN 94 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2004 Micron Technology, Inc. All rights reserved.
BA1 and BA0; CKE must be HIGH the entire time the DLL is resetting; remaining MR bits
must be “0.” Mode Register (MR) (page 80) for all MR requirements.
9. Issue PRECHARGE ALL command.
10. Issue two or more REFRESH commands.
11. Issue a LOAD MODE command to the MR with LOW to A8 to initialize device operation
(that is, to program operating parameters without resetting the DLL). To access the MR,
set BA0 and BA1 LOW; remaining MR bits must be set to desired settings. Mode Register
(MR) (page 80) for all MR requirements.
12. Issue a LOAD MODE command to the EMR to enable OCD default by setting bits E7, E8,
and E9 to “1,” and then setting all other desired parameters. To access the EMR, set BA0
LOW and BA1 HIGH (see Extended Mode Register (EMR) (page 86) for all EMR require-
ments.
13. Issue a LOAD MODE command to the EMR to enable OCD exit by setting bits E7, E8, and
E9 to “0,” and then setting all other desired parameters. To access the extended mode
registers, EMR, set BA0 LOW and BA1 HIGH for all EMR requirements.
14. The DDR2 SDRAM is now initialized and ready for normal operation 200 clock cycles af-
ter the DLL RESET at Tf0.
15. DM represents DM for the x4, x8 configurations and UDM, LDM for the x16 configura-
tion; DQS represents DQS, DQS#, UDQS, UDQS#, LDQS, LDQS#, RDQS, RDQS# for the
appropriate configuration (x4, x8, x16); DQ represents DQ0–DQ3 for x4, DQ–DQ7 for x8
and DQ0–DQ15 for x16.
16. A10 = PRECHARGE ALL, CODE = desired values for mode registers (bank addresses are
required to be decoded).
512Mb: x4, x8, x16 DDR2 SDRAM
Initialization
PDF: 09005aef82f1e6e2
Rev. N 1/09 EN 95 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2004 Micron Technology, Inc. All rights reserved.
ACTIVATE
Before any READ or WRITE commands can be issued to a bank within the DDR2
SDRAM, a row in that bank must be opened (activated), even when additive latency is
used. This is accomplished via the ACTIVATE command, which selects both the bank
and the row to be activated.
After a row is opened with an ACTIVATE command, a READ or WRITE command may
be issued to that row subject to the tRCD specification. tRCD (MIN) should be divided
by the clock period and rounded up to the next whole number to determine the earliest
clock edge after the ACTIVATE command on which a READ or WRITE command can be
entered. The same procedure is used to convert other specification limits from time
units to clock cycles. For example, a tRCD (MIN) specification of 20ns with a 266 MHz
clock (tCK = 3.75ns) results in 5.3 clocks, rounded up to 6. This is shown in Figure 46
(page 96), which covers any case where 5 < tRCD (MIN)/tCK ≤ 6. Figure 46 (page 96)
also shows the case for tRRD where 2 < tRRD (MIN)/tCK ≤ 3.
Figure 46: Example: Meeting tRRD (MIN) and tRCD (MIN)
Command
Don’t Care
T1T0 T2 T3 T4 T5 T6 T7
tRRD tRRD
Row Row Col
Bank xBank y
Row
Bank zBank y
NOPACT NOP NOPACT NOP NOP RD/WR
tRCD
CK#
Address
Bank address
CK
T8 T9
NOP NOP
A subsequent ACTIVATE command to a different row in the same bank can only be is-
sued after the previous active row has been closed (precharged). The minimum time
interval between successive ACTIVATE commands to the same bank is defined by tRC.
A subsequent ACTIVATE command to another bank can be issued while the first bank is
being accessed, which results in a reduction of total row-access overhead. The mini-
mum time interval between successive ACTIVATE commands to different banks is
defined by tRRD.
DDR2 devices with 8 banks (1Gb or larger) have an additional requirement: tFAW. This
requires no more than four ACTIVATE commands may be issued in any given tFAW
(MIN) period, as shown in Figure 47 (page 97).
512Mb: x4, x8, x16 DDR2 SDRAM
ACTIVATE
PDF: 09005aef82f1e6e2
Rev. N 1/09 EN 96 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2004 Micron Technology, Inc. All rights reserved.
Figure 47: Multibank Activate Restriction
Command
Don’t Care
T1T0 T2 T3 T4 T5 T6 T7
tRRD (MIN)
Row Row
READACT ACT NOP
tFAW (MIN)
Bank address
CK#
Address
CK
T8 T9
Col
Bank a
ACTREAD READ READACT NOP
Row
Col Row
Col Col
Bank c
Bank bBank d
Bank cBank e
ACT
Row
T10
Bank d
Bank bBank a
Note: 1. DDR2-533 (-37E, x4 or x8), tCK = 3.75ns, BL = 4, AL = 3, CL = 4, tRRD (MIN) = 7.5ns,
tFAW (MIN) = 37.5ns.
512Mb: x4, x8, x16 DDR2 SDRAM
ACTIVATE
PDF: 09005aef82f1e6e2
Rev. N 1/09 EN 97 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2004 Micron Technology, Inc. All rights reserved.
READ
READ bursts are initiated with a READ command. The starting column and bank ad-
dresses are provided with the READ command, and auto precharge is either enabled or
disabled for that burst access. If auto precharge is enabled, the row being accessed is
automatically precharged at the completion of the burst. If auto precharge is disabled,
the row will be left open after the completion of the burst.
During READ bursts, the valid data-out element from the starting column address will
be available READ latency (RL) clocks later. RL is defined as the sum of AL and CL:
RL = AL + CL. The value for AL and CL are programmable via the MR and EMR com-
mands, respectively. Each subsequent data-out element will be valid nominally at the
next positive or negative clock edge (at the next crossing of CK and CK#). Figure 48
(page 99) shows examples of RL based on different AL and CL settings.
DQS/DQS# is driven by the DDR2 SDRAM along with output data. The initial LOW state
on DQS and the HIGH state on DQS# are known as the read preamble (tRPRE). The
LOW state on DQS and the HIGH state on DQS# coincident with the last data-out ele-
ment are known as the read postamble (tRPST).
Upon completion of a burst, assuming no other commands have been initiated, the DQ
will go High-Z. A detailed explanation of tDQSQ (valid data-out skew), tQH (data-out
window hold), and the valid data window are depicted in Figure 57 (page 107) and Fig-
ure 58 (page 108). A detailed explanation of tDQSCK (DQS transition skew to CK) and
tAC (data-out transition skew to CK) is shown in Figure 59 (page 109).
Data from any READ burst may be concatenated with data from a subsequent READ
command to provide a continuous flow of data. The first data element from the new
burst follows the last element of a completed burst. The new READ command should
be issued x cycles after the first READ command, where x equals BL/2 cycles (see Fig-
ure 49 (page 100)).
Nonconsecutive read data is illustrated in Figure 50 (page 101). Full-speed random
read accesses within a page (or pages) can be performed. DDR2 SDRAM supports the
use of concurrent auto precharge timing (see Table 41 (page 104)).
DDR2 SDRAM does not allow interrupting or truncating of any READ burst using BL = 4
operations. Once the BL = 4 READ command is registered, it must be allowed to com-
plete the entire READ burst. However, a READ (with auto precharge disabled) using BL
= 8 operation may be interrupted and truncated only by another READ burst as long as
the interruption occurs on a 4-bit boundary due to the 4n prefetch architecture of
DDR2 SDRAM. As shown in Figure 51 (page 102), READ burst BL = 8 operations may
not be interrupted or truncated with any other command except another READ com-
mand.
Data from any READ burst must be completed before a subsequent WRITE burst is al-
lowed. An example of a READ burst followed by a WRITE burst is shown in Figure 52
(page 102). The tDQSS (NOM) case is shown (tDQSS [MIN] and tDQSS [MAX] are de-
fined in Figure 60 (page 111)).
512Mb: x4, x8, x16 DDR2 SDRAM
READ
PDF: 09005aef82f1e6e2
Rev. N 1/09 EN 98 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2004 Micron Technology, Inc. All rights reserved.
Figure 48: READ Latency
READ NOP NOP NOP NOP NOP
Bank a,
Col n
CK
CK#
Command
Address
DQ
DQS, DQS#
DO
n
DO
n
T0 T1 T2 T3 T4n T5nT4 T5
CK
CK#
Command READ NOP NOP NOP NOP NOP
Address Bank a,
Col n
RL = 3 (AL = 0, CL = 3)
DQ
DQS, DQS#
DO
n
T0 T1 T2 T3 T3n T4nT4 T5
CK
CK#
Command READ NOP NOP NOP NOP NOP
Address Bank a,
Col n
RL = 4 (AL = 0, CL = 4)
DQ
DQS, DQS#
T0 T1 T2 T3 T3n T4nT4 T5
AL = 1 CL = 3
RL = 4 (AL = 1 + CL = 3)
Don’t CareTransitioning Data
Notes: 1. DO n = data-out from column n.
2. BL = 4.
3. Three subsequent elements of data-out appear in the programmed order following
DO n.
4. Shown with nominal tAC, tDQSCK, and tDQSQ.
512Mb: x4, x8, x16 DDR2 SDRAM
READ
PDF: 09005aef82f1e6e2
Rev. N 1/09 EN 99 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2004 Micron Technology, Inc. All rights reserved.
Figure 49: Consecutive READ Bursts
CK
CK#
Command READ NOP READ NOP NOP NOP NOP
Address Bank,
Col nBank,
Col b
Command READ NOP READ NOP NOP NOP
Address Bank,
Col nBank,
Col b
RL = 3
CK
CK#
DQ
DQS, DQS#
RL = 4
DQ
DQS, DQS#
DO
nDO
b
DO
nDO
b
T0 T1 T2 T3 T3n T4nT4 T5 T6
T5n T6n
T0 T1 T2 T3T2n
NOP
T3n T4nT4 T5 T6
T5n T6n
Don’t CareTransitioning Data
tCCD
tCCD
Notes: 1. DO n (or b) = data-out from column n (or column b).
2. BL = 4.
3. Three subsequent elements of data-out appear in the programmed order following
DO n.
4. Three subsequent elements of data-out appear in the programmed order following
DO b.
5. Shown with nominal tAC, tDQSCK, and tDQSQ.
6. Example applies only when READ commands are issued to same device.
512Mb: x4, x8, x16 DDR2 SDRAM
READ
PDF: 09005aef82f1e6e2
Rev. N 1/09 EN 100 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2004 Micron Technology, Inc. All rights reserved.
Figure 50: Nonconsecutive READ Bursts
Command READ NOP NOP NOP NOP NOP NOP NOPREAD
T0 T1 T2 T3 T3n T4 T5 T7 T8T6T4n T6n T7n
CK
CK#
T5 T7 T8T5n T6T4n T7n
Command NOP NOP NOP NOPREAD NOP NOP NOPREAD
T0 T1 T2 T3 T4
DQ DO
nDO
b
Don’t CareTransitioning Data
Address Bank,
Col nBank,
Col b
Address Bank,
Col nBank,
Col b
CK
CK#
CL = 4
CL = 3
DQ DO
nDO
b
DQS, DQS#
DQS, DQS#
Notes: 1. DO n (or b) = data-out from column n (or column b).
2. BL = 4.
3. Three subsequent elements of data-out appear in the programmed order following
DO n.
4. Three subsequent elements of data-out appear in the programmed order following
DO b.
5. Shown with nominal tAC, tDQSCK, and tDQSQ.
6. Example applies when READ commands are issued to different devices or nonconsecu-
tive READs.
512Mb: x4, x8, x16 DDR2 SDRAM
READ
PDF: 09005aef82f1e6e2
Rev. N 1/09 EN 101 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2004 Micron Technology, Inc. All rights reserved.
Figure 51: READ Interrupted by READ
T0 T1 T2
Don’t CareTransitioning Data
T3 T4 T5 T6
Command READ
1
NOP
2
NOP
2
Valid Valid Valid
READ
3
Valid Valid Valid
T7 T8 T9
CK
CK#
CL = 3 (AL = 0)
tCCD
Address Valid
4
Valid
4
CL = 3 (AL = 0)
DQ DO DO DO DO DO DO DO DO DO DO DO DO
A10 Valid
5
DQS, DQS#
Notes: 1. BL = 8 required; auto precharge must be disabled (A10 = LOW).
2. NOP or COMMAND INHIBIT commands are valid. PRECHARGE command cannot be is-
sued to banks used for READs at T0 and T2.
3. Interrupting READ command must be issued exactly 2 × tCK from previous READ.
4. READ command can be issued to any valid bank and row address (READ command at T0
and T2 can be either same bank or different bank).
5. Auto precharge can be either enabled (A10 = HIGH) or disabled (A10 = LOW) by the in-
terrupting READ command.
6. Example shown uses AL = 0; CL = 3, BL = 8, shown with nominal tAC, tDQSCK, and tDQSQ.
Figure 52: READ-to-WRITE
CK
CK# T0 T1 T2
Don’t CareTransitioning Data
T3 T4 T5 T6 T7 T8 T9 T10 T11
AL = 2 CL = 3
RL = 5
WL = RL - 1 = 4
tRCD = 3
Command
ACT nNOP NOP NOP NOP NOP NOP
READ nNOP NOP NOPWRITE
DQS, DQS#
DQ DO
nDO
n + 1 DO
n + 2 DO
n + 3 DI
nDI
n + 1 DI
n + 2 DI
n + 3
Notes: 1. BL = 4; CL = 3; AL = 2.
2. Shown with nominal tAC, tDQSCK, and tDQSQ.
READ with Precharge
A READ burst may be followed by a PRECHARGE command to the same bank, provided
auto precharge is not activated. The minimum READ-to-PRECHARGE command spac-
ing to the same bank has two requirements that must be satisfied: AL + BL/2 clocks and
tRTP. tRTP is the minimum time from the rising clock edge that initiates the last 4-bit
prefetch of a READ command to the PRECHARGE command. For BL = 4, this is the time
from the actual READ (AL after the READ command) to PRECHARGE command. For
BL = 8, this is the time from AL + 2 × CK after the READ-to-PRECHARGE command.
Following the PRECHARGE command, a subsequent command to the same bank can-
512Mb: x4, x8, x16 DDR2 SDRAM
READ
PDF: 09005aef82f1e6e2
Rev. N 1/09 EN 102 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2004 Micron Technology, Inc. All rights reserved.
not be issued until tRP is met. However, part of the row precharge time is hidden during
the access of the last data elements.
Examples of READ-to-PRECHARGE for BL = 4 are shown in Figure 53 (page 103) and in
Figure 54 (page 103) for BL = 8. The delay from READ-to-PRECHARGE period to the
same bank is AL + BL/2 - 2CK + MAX (tRTP/tCK or 2 × CK) where MAX means the larger
of the two.
Figure 53: READ-to-PRECHARGE – BL = 4
CK
CK#
T0 T1 T2
Don’t CareTransitioning Data
T3 T4 T5 T6 T7
Address Bank aBank aBank a
≥tRAS (MIN)
≥tRTP (MIN)
≥tRP (MIN)
AL + BL/2 - 2CK + MAX (tRTP/tCK or 2CK)
Command READ NOP
PRE
ACT
NOP NOP NOP NOP
4-bit
prefetch
DQ DO DO DO DO
A10 Valid Valid
CL = 3AL = 1
DQS, DQS#
≥tRC (MIN)
Notes: 1. RL = 4 (AL = 1, CL = 3); BL = 4.
2. tRTP ≥ 2 clocks.
3. Shown with nominal tAC, tDQSCK, and tDQSQ.
Figure 54: READ-to-PRECHARGE – BL = 8
CK
CK# T0 T1 T2
Don’t CareTransitioning Data
T3 T4 T5 T6 T7 T8
CL = 3
AL = 1
DQS, DQS#
First 4-bit
prefetch
Second 4-bit
prefetch
≥tRTP (MIN) ≥tRP (MIN)
Address
Bank aBank aBank a
≥tRC (MIN)
≥tRAS (MIN)
A10
Valid Valid
AL + BL/2 - 2CK + MAX (tRTP/tCK or 2CK)
DQ
DO DO DO DO DO DO DO DO
Command
READ NOP NOP NOP
NOP NOP
NOP ACT
PRE
Notes: 1. RL = 4 (AL = 1, CL = 3); BL = 8.
2. tRTP ≥ 2 clocks.
3. Shown with nominal tAC, tDQSCK, and tDQSQ.
512Mb: x4, x8, x16 DDR2 SDRAM
READ
PDF: 09005aef82f1e6e2
Rev. N 1/09 EN 103 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2004 Micron Technology, Inc. All rights reserved.
READ with Auto Precharge
If A10 is high when a READ command is issued, the READ with auto precharge function
is engaged. The DDR2 SDRAM starts an auto precharge operation on the rising clock
edge that is AL + (BL/2) cycles later than the read with auto precharge command provi-
ded tRAS (MIN) and tRTP are satisfied. If tRAS (MIN) is not satisfied at this rising clock
edge, the start point of the auto precharge operation will be delayed until tRAS (MIN) is
satisfied. If tRTP (MIN) is not satisfied at this rising clock edge, the start point of the
auto precharge operation will be delayed until tRTP (MIN) is satisfied. When the inter-
nal precharge is pushed out by tRTP, tRP starts at the point where the internal pre-
charge happens (not at the next rising clock edge after this event).
When BL = 4, the minimum time from READ with auto precharge to the next ACTIVATE
command is AL + (tRTP + tRP)/tCK. When BL = 8, the minimum time from READ with
auto precharge to the next ACTIVATE command is AL + 2 clocks + (tRTP + tRP)/tCK. The
term (tRTP + tRP)/tCK is always rounded up to the next integer. A general purpose equa-
tion can also be used: AL + BL/2 - 2CK + (tRTP + tRP)/tCK. In any event, the internal
precharge does not start earlier than two clocks after the last 4-bit prefetch.
READ with auto precharge command may be applied to one bank while another bank is
operational. This is referred to as concurrent auto precharge operation, as noted in Ta-
ble 41 (page 104). Examples of READ with precharge and READ with auto precharge
with applicable timing requirements are shown in Figure 55 (page 105) and Figure 56
(page 106), respectively.
Table 41: READ Using Concurrent Auto Precharge
From Command (Bank n) To Command (Bank m)
Minimum Delay
(with Concurrent Auto Precharge) Units
READ with auto precharge READ or READ with auto precharge BL/2 tCK
WRITE or WRITE with auto precharge (BL/2) + 2 tCK
PRECHARGE or ACTIVATE 1 tCK
512Mb: x4, x8, x16 DDR2 SDRAM
READ
PDF: 09005aef82f1e6e2
Rev. N 1/09 EN 104 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2004 Micron Technology, Inc. All rights reserved.
Figure 55: Bank Read – Without Auto Precharge
CK
CK#
CKE
A10
Bank address
tCK tCH tCL
RA
tRCD
tRAS3
tRC
tRP
CL = 3
DM
T0 T1 T2 T3 T4 T5 T7n T8nT6 T7 T8
DQ8
DQS, DQS#
Case 1: tAC (MIN)
and tDQSCK (MIN)
Case 2: tAC (MAX)
and tDQSCK (MAX)
DQ8
DQS, DQS#
t
RPRE
tRPRE
tRPST
t
DQSCK (MIN)
t
LZ (MIN)
t
LZ (MAX)
t
AC (MIN)
t
LZ (MIN)
DO
n
t
HZ (MAX)
t
AC (MAX)
t
LZ (MIN)
DO
n
NOP1
NOP1
Command ACT
RA Col n
PRE
3
Bank x
RA
RA
Bank xBank x6
7
7
7 7
ACT
Bank x
NOP1NOP1NOP1NOP1
t
HZ (MIN)
One bank
All banks
Don’t CareTransitioning Data
READ2
Address
5
tRTP4
tRPST
t
DQSCK (MAX)
T9
Notes: 1. NOP commands are shown for ease of illustration; other commands may be valid at
these times.
2. BL = 4 and AL = 0 in the case shown.
3. The PRECHARGE command can only be applied at T6 if tRAS (MIN) is met.
4. READ-to-PRECHARGE = AL + BL/2 - 2CK + MAX (tRTP/tCK or 2CK).
5. Disable auto precharge.
6. “Don’t Care” if A10 is HIGH at T5.
7. I/O balls, when entering or exiting High-Z, are not referenced to a specific voltage level,
but to when the device begins to drive or no longer drives, respectively.
8. DO n = data-out from column n; subsequent elements are applied in the programmed
order.
512Mb: x4, x8, x16 DDR2 SDRAM
READ
PDF: 09005aef82f1e6e2
Rev. N 1/09 EN 105 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2004 Micron Technology, Inc. All rights reserved.
Figure 56: Bank Read – with Auto Precharge
4-bit
prefetch
CK
CK#
CKE
A10
Bank address
tCK tCH tCL
RA
tRCD
tRAS
tRC
tRP
CL = 3
DM
T0 T1 T2 T3 T4 T5 T7n T8nT6 T7 T8
DQ6
DQS, DQS#
Case 1: tAC (MIN)
and tDQSCK (MIN)
Case 2: tAC (MAX)
and tDQSCK (MAX)
DQ6
DQS, DQS#
t
RPRE
tRPRE
tRPST
tRPST
t
DQSCK (MIN)
t
DQSCK (MAX)
t
LZ (MIN)
t
LZ (MAX)
t
AC (MIN)
t
LZ (MIN)
t
HZ (MAX)
t
AC (MAX)
t
LZ (MAX)
DO
n
NOP1
NOP1
Command1
ACT
RA Col n
Bank x
RA
RA
Bank x
ACT
Bank x
NOP1NOP1NOP1NOP1NOP1
t
HZ (MIN)
Don’t CareTransitioning Data
READ2,3
Address
AL = 1
tRTP
Internal
precharge
4
5
5
5 5
DO
n
Notes: 1. NOP commands are shown for ease of illustration; other commands may be valid at
these times.
2. BL = 4, RL = 4 (AL = 1, CL = 3) in the case shown.
3. The DDR2 SDRAM internally delays auto precharge until both tRAS (MIN) and tRTP (MIN)
have been satisfied.
4. Enable auto precharge.
5. I/O balls, when entering or exiting High-Z, are not referenced to a specific voltage level,
but to when the device begins to drive or no longer drives, respectively.
6. DO n = data-out from column n; subsequent elements are applied in the programmed
order.
512Mb: x4, x8, x16 DDR2 SDRAM
READ
PDF: 09005aef82f1e6e2
Rev. N 1/09 EN 106 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2004 Micron Technology, Inc. All rights reserved.
Figure 57: x4, x8 Data Output Timing – tDQSQ, tQH, and Data Valid Window
DQ (last data valid)
DQ4
DQ4
DQ4
DQ4
DQ4
DQ4
DQS#
DQS3
DQ (last data valid)
DQ (first data no longer valid)
DQ (first data no longer valid)
All DQs and DQS collectively6
Earliest signal transition
Latest signal transition
T2
T2
T2
T2n
T2n
T2n
T3
T3
T3
T3n
T3n
T3n
CK
CK#
T1 T2 T3 T4T2n T3n
tQH5
tHP1tHP1 tHP1
tQH5
tQHS
tQH5
tHP1tHP1tHP1
tQH5
tDQSQ2 tDQSQ2 tDQSQ2 tDQSQ2
Data
valid
window
Data
valid
window
Data
valid
window
Data
valid
window
tQHS
tQHS
tQHS
Notes: 1. tHP is the lesser of tCL or tCH clock transitions collectively when a bank is active.
2. tDQSQ is derived at each DQS clock edge, is not cumulative over time, begins with DQS
transitions, and ends with the last valid transition of DQ.
3. DQ transitioning after the DQS transition defines the tDQSQ window. DQS transitions at
T2 and at T2n are “early DQS,” at T3 are “nominal DQS,” and at T3n are “late DQS.”
4. DQ0, DQ1, DQ2, DQ3 for x4 or DQ0–DQ7 for x8.
5. tQH is derived from tHP: tQH = tHP - tQHS.
6. The data valid window is derived for each DQS transition and is defined as tQH - tDQSQ.
512Mb: x4, x8, x16 DDR2 SDRAM
READ
PDF: 09005aef82f1e6e2
Rev. N 1/09 EN 107 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2004 Micron Technology, Inc. All rights reserved.
Figure 58: x16 Data Output Timing – tDQSQ, tQH, and Data Valid Window
DQ (last data valid)4
DQ4
DQ4
DQ4
DQ4
DQ4
DQ4
LDSQ#
LDQS3
DQ (last data valid)4
DQ (first data no longer valid)4
DQ (first data no longer valid)4
DQ0–DQ7 and LDQS collectively6T2
T2
T2
T2n
T2n
T2n
T3
T3
T3
T3n
T3n
T3n
CK
CK# T1 T2 T3 T4T2n T3n
tQH
5
tQH
5
tDQSQ
2
tDQSQ
2
tDQSQ
2
tDQSQ
2
Data valid
window
Data valid
window
DQ (last data valid)7
DQ7
DQ7
DQ7
DQ7
DQ7
DQ7
UDQS#
UDQS3
DQ (last data valid)7
DQ (first data no longer valid)7
DQ (first data no longer valid)7
DQ8–DQ15 and UDQS collectively6T2
T2
T2
T2n
T2n
T2n
T3
T3
T3
T3n
T3n
T3n
tQH
5
tQH
5
tQH
5
tQH
5
tDQSQ
2
tDQSQ
2
tDQSQ
2
tDQSQ
2
tHP
1
tHP
1
tHP
1
tHP
1
tHP
1
tHP
1
tQH
5
tQH
5
Data valid
window
Data valid
window
Data valid
window
Data valid
window
Data valid
window
Upper Byte
Lower Byte
Data valid
window
tQHS
tQHS
tQHS
tQHS
tQHS
tQHS
tQHS
tQHS
Notes: 1. tHP is the lesser of tCL or tCH clock transitions collectively when a bank is active.
2. tDQSQ is derived at each DQS clock edge, is not cumulative over time, begins with DQS
transitions, and ends with the last valid transition of DQ.
3. DQ transitioning after the DQS transitions define the tDQSQ window. LDQS defines the
lower byte, and UDQS defines the upper byte.
4. DQ0, DQ1, DQ2, DQ3, DQ4, DQ5, DQ6, or DQ7.
512Mb: x4, x8, x16 DDR2 SDRAM
READ
PDF: 09005aef82f1e6e2
Rev. N 1/09 EN 108 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2004 Micron Technology, Inc. All rights reserved.
5. tQH is derived from tHP: tQH = tHP - tQHS.
6. The data valid window is derived for each DQS transition and is tQH - tDQSQ.
7. DQ8, DQ9, DQ10, D11, DQ12, DQ13, DQ14, or DQ15.
Figure 59: Data Output Timing – tAC and tDQSCK
CK
CK#
DQS#/DQS or
LDQS#/LDQS/UDQ#/UDQS3
T01T1 T2 T3 T3n T4 T4n T5 T5n T6 T6n T7
tRPST
tDQSCK2 (MIN) tDQSCK2 (MAX)
DQ (last data valid)
DQ (first data valid)
All DQs collectively4
tAC5 (MIN) tAC5 (MAX)
tLZ (MIN) tHZ (MAX)
T3
T3
T3n T4n T5n T6n
T3n
T3n
T4n
T4n
T5n
T5n
T6n
T6n
T4
T5
T5
T6
T6
T3 T4 T5 T6
T4
tHZ (MAX)
tLZ (MIN) tRPRE
Notes: 1. READ command with CL = 3, AL = 0 issued at T0.
2. tDQSCK is the DQS output window relative to CK and is the long-term component of
DQS skew.
3. DQ transitioning after DQS transitions define tDQSQ window.
4. All DQ must transition by tDQSQ after DQS transitions, regardless of tAC.
5. tAC is the DQ output window relative to CK and is the “long term” component of DQ
skew.
6. tLZ (MIN) and tAC (MIN) are the first valid signal transitions.
7. tHZ (MAX) and tAC (MAX) are the latest valid signal transitions.
8. I/O balls, when entering or exiting High-Z, are not referenced to a specific voltage level,
but to when the device begins to drive or no longer drives, respectively.
WRITE
WRITE bursts are initiated with a WRITE command. DDR2 SDRAM uses WL equal to RL
minus one clock cycle (WL = RL - 1CK) (see READ (page 79)). The starting column and
bank addresses are provided with the WRITE command, and auto precharge is either
enabled or disabled for that access. If auto precharge is enabled, the row being accessed
is precharged at the completion of the burst.
Note:
For the WRITE commands used in the following illustrations, auto precharge is disabled.
During WRITE bursts, the first valid data-in element will be registered on the first rising
edge of DQS following the WRITE command, and subsequent data elements will be reg-
istered on successive edges of DQS. The LOW state on DQS between the WRITE com-
mand and the first rising edge is known as the write preamble; the LOW state on DQS
following the last data-in element is known as the write postamble.
The time between the WRITE command and the first rising DQS edge is WL ±tDQSS.
Subsequent DQS positive rising edges are timed, relative to the associated clock edge,
as ±tDQSS. tDQSS is specified with a relatively wide range (25 percent of one clock cy-
512Mb: x4, x8, x16 DDR2 SDRAM
WRITE
PDF: 09005aef82f1e6e2
Rev. N 1/09 EN 109 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2004 Micron Technology, Inc. All rights reserved.
cle). All of the WRITE diagrams show the nominal case, and where the two extreme
cases (tDQSS [MIN] and tDQSS [MAX]) might not be intuitive, they have also been inclu-
ded. Figure 60 (page 111) shows the nominal case and the extremes of tDQSS for BL = 4.
Upon completion of a burst, assuming no other commands have been initiated, the DQ
will remain High-Z and any additional input data will be ignored.
Data for any WRITE burst may be concatenated with a subsequent WRITE command to
provide continuous flow of input data. The first data element from the new burst is ap-
plied after the last element of a completed burst. The new WRITE command should be
issued x cycles after the first WRITE command, where x equals BL/2.
Figure 61 (page 112) shows concatenated bursts of BL = 4 and how full-speed random
write accesses within a page or pages can be performed. An example of nonconsecutive
WRITEs is shown in Figure 62 (page 112). DDR2 SDRAM supports concurrent auto pre-
charge options, as shown in Table 42 (page 110).
DDR2 SDRAM does not allow interrupting or truncating any WRITE burst using BL = 4
operation. Once the BL = 4 WRITE command is registered, it must be allowed to com-
plete the entire WRITE burst cycle. However, a WRITE BL = 8 operation (with auto
precharge disabled) might be interrupted and truncated only by another WRITE burst
as long as the interruption occurs on a 4-bit boundary due to the 4n-prefetch architec-
ture of DDR2 SDRAM. WRITE burst BL = 8 operations may not be interrupted or
truncated with any command except another WRITE command, as shown in Figure 63
(page 113).
Data for any WRITE burst may be followed by a subsequent READ command. To follow
a WRITE, tWTR should be met, as shown in Figure 64 (page 114). The number of clock
cycles required to meet tWTR is either 2 or tWTR/tCK, whichever is greater. Data for any
WRITE burst may be followed by a subsequent PRECHARGE command. tWR must be
met, as shown in Figure 65 (page 115). tWR starts at the end of the data burst, regard-
less of the data mask condition.
Table 42: WRITE Using Concurrent Auto Precharge
From Command
(Bank n)
To Command
(Bank m)
Minimum Delay
(with Concurrent Auto Precharge) Units
WRITE with auto precharge READ or READ with auto precharge (CL - 1) + (BL/2) + tWTR tCK
WRITE or WRITE with auto precharge (BL/2) tCK
PRECHARGE or ACTIVATE 1 tCK
512Mb: x4, x8, x16 DDR2 SDRAM
WRITE
PDF: 09005aef82f1e6e2
Rev. N 1/09 EN 110 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2004 Micron Technology, Inc. All rights reserved.
Figure 60: Write Burst
DQS, DQS#
tDQSS (MAX)
tDQSS (NOM)
tDQSS (MIN)
DM
DQ
CK
CK#
Command
WRITE NOP NOP
Address
Bank a,
Col b
NOP NOP
T0 T1 T2 T3T2n T4T3n
DQS, DQS#
5
DM
DQ
DQS, DQS#
DM
DQ
DI
b
DI
b
DI
b
Don’t CareTransitioning Data
tDQSS5
WL ± tDQSS
WL - tDQSS tDQSS5
WL + tDQSS
Notes: 1. Subsequent rising DQS signals must align to the clock within tDQSS.
2. DI b = data-in for column b.
3. Three subsequent elements of data-in are applied in the programmed order following
DI b.
4. Shown with BL = 4, AL = 0, CL = 3; thus, WL = 2.
5. A10 is LOW with the WRITE command (auto precharge is disabled).
512Mb: x4, x8, x16 DDR2 SDRAM
WRITE
PDF: 09005aef82f1e6e2
Rev. N 1/09 EN 111 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2004 Micron Technology, Inc. All rights reserved.
Figure 61: Consecutive WRITE-to-WRITE
CK
CK#
Command
WRITE NOP WRITE NOP NOP NOP
Address
Bank,
Col b
NOP
Bank,
Col n
T0 T1 T2 T3T2n T4 T5T4n T6T5nT3nT1n
DQ
DQS, DQS#
DM
DI
n
DI
b
Don’t CareTransitioning Data
WL ± tDQSS
tDQSS (NOM)
WL = 2
tCCD
WL = 2
11
1
Notes: 1. Subsequent rising DQS signals must align to the clock within tDQSS.
2. DI b, etc. = data-in for column b, etc.
3. Three subsequent elements of data-in are applied in the programmed order following
DI b.
4. Three subsequent elements of data-in are applied in the programmed order following
DI n.
5. Shown with BL = 4, AL = 0, CL = 3; thus, WL = 2.
6. Each WRITE command may be to any bank.
Figure 62: Nonconsecutive WRITE-to-WRITE
CK
CK#
Command
WRITE NOP NOP NOP NOP NOP
Address
Bank,
Col b
WRITE
Bank,
Col n
T0 T1 T2 T3T2n T4 T5T4nT3n T5n T6 T6n
DQ
DQS, DQS#
DM
DI
n
DI
b
tDQSS (NOM) WL ± tDQSS
Don’t CareTransitioning Data
WL = 2 WL = 2
11 1
Notes: 1. Subsequent rising DQS signals must align to the clock within tDQSS.
2. DI b (or n), etc. = data-in for column b (or column n).
3. Three subsequent elements of data-in are applied in the programmed order following
DI b.
4. Three subsequent elements of data-in are applied in the programmed order following
DI n.
5. Shown with BL = 4, AL = 0, CL = 3; thus, WL = 2.
6. Each WRITE command may be to any bank.
512Mb: x4, x8, x16 DDR2 SDRAM
WRITE
PDF: 09005aef82f1e6e2
Rev. N 1/09 EN 112 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2004 Micron Technology, Inc. All rights reserved.
Figure 63: WRITE Interrupted by WRITE
CK
CK#
Command
DQ
DQS, DQS#
WL = 3
WRITE1 a
T0 T1 T2
Don’t CareTransitioning Data
DI
a
T3 T4 T5 T6
WRITE3 b
DI
b
T7 T8 T9
WL = 32-clock requirement
Address
A10
Valid6
Valid5Valid5
Valid4Valid4
Valid
4
NOP2
NOP2
NOP2
NOP2
NOP2
7 7 7 7 7
DI
a + 1 DI
a + 3
DI
a + 2 DI
b + 1 DI
b + 2 DI
b + 3 DI
b + 4 DI
b + 5 DI
b + 6 DI
b + 7
Notes: 1. BL = 8 required and auto precharge must be disabled (A10 = LOW).
2. The NOP or COMMAND INHIBIT commands are valid. The PRECHARGE command cannot
be issued to banks used for WRITEs at T0 and T2.
3. The interrupting WRITE command must be issued exactly 2 × tCK from previous WRITE.
4. The earliest WRITE-to-PRECHARGE timing for WRITE at T0 is WL + BL/2 + tWR where tWR
starts with T7 and not T5 (because BL = 8 from MR and not the truncated length).
5. The WRITE command can be issued to any valid bank and row address (WRITE command
at T0 and T2 can be either same bank or different bank).
6. Auto precharge can be either enabled (A10 = HIGH) or disabled (A10 = LOW) by the in-
terrupting WRITE command.
7. Subsequent rising DQS signals must align to the clock within tDQSS.
8. Example shown uses AL = 0; CL = 4, BL = 8.
512Mb: x4, x8, x16 DDR2 SDRAM
WRITE
PDF: 09005aef82f1e6e2
Rev. N 1/09 EN 113 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2004 Micron Technology, Inc. All rights reserved.
Figure 64: WRITE-to-READ
tDQSS (NOM)
CK
CK#
Command
WRITE NOP NOP NOP NOP NOP NOP NOP
Address
Bank a,
Col bBank a,
Col n
READ
T0 T1 T2 T3T2n T4 T5 T9nT3n T6 T7 T8 T9
tWTR1
CL = 3
CL = 3
CL = 3
DQ
DQS, DQS#
DM
DI
b
tDQSS (MIN)
DQ
DQS, DQS#
DM
DI
b
tDQSS (MAX)
DQ
DQS, DQS#
DM
DI
bDI
DI
Don’t CareTransitioning Data
WL ± tDQSS
WL - tDQSS
WL + tDQSS
NOP
DI
2
2
2
Notes: 1. tWTR is required for any READ following a WRITE to the same device, but it is not re-
quired between module ranks.
2. Subsequent rising DQS signals must align to the clock within tDQSS.
3. DI b = data-in for column b; DO n = data-out from column n.
4. BL = 4, AL = 0, CL = 3; thus, WL = 2.
5. One subsequent element of data-in is applied in the programmed order following DI b.
6. tWTR is referenced from the first positive CK edge after the last data-in pair.
7. A10 is LOW with the WRITE command (auto precharge is disabled).
8. The number of clock cycles required to meet tWTR is either 2 or tWTR/tCK, whichever is
greater.
512Mb: x4, x8, x16 DDR2 SDRAM
WRITE
PDF: 09005aef82f1e6e2
Rev. N 1/09 EN 114 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2004 Micron Technology, Inc. All rights reserved.
Figure 65: WRITE-to-PRECHARGE
tDQSS (NOM)
CK
CK#
Command
WRITE NOP NOP NOP NOPNOP
Address
Bank a,
Col bBank,
(a or all)
NOP
T0 T1 T2 T3T2n T4 T5T3n T6 T7
tWR tRP
DQ
DQS#
DQS
DM
DI
b
tDQSS (MIN)
DQ
DQS#
DQS
DM
DI
b
tDQSS (MAX)
DQ
DQS#
DQS
DM
DI
b
Don’t CareTransitioning Data
WL + tDQSS
WL - tDQSS
WL + tDQSS
PRE
1
1
1
Notes: 1. Subsequent rising DQS signals must align to the clock within tDQSS.
2. DI b = data-in for column b.
3. Three subsequent elements of data-in are applied in the programmed order following
DI b.
4. BL = 4, CL = 3, AL = 0; thus, WL = 2.
5. tWR is referenced from the first positive CK edge after the last data-in pair.
6. The PRECHARGE and WRITE commands are to the same bank. However, the PRECHARGE
and WRITE commands may be to different banks, in which case tWR is not required and
the PRECHARGE command could be applied earlier.
7. A10 is LOW with the WRITE command (auto precharge is disabled).
512Mb: x4, x8, x16 DDR2 SDRAM
WRITE
PDF: 09005aef82f1e6e2
Rev. N 1/09 EN 115 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2004 Micron Technology, Inc. All rights reserved.
Figure 66: Bank Write – Without Auto Precharge
CK
CK#
CKE
A10
tCK tCH tCL
RA
tRCD
tRAS tRP
tWR
T0 T1 T2 T3 T5 T6 T6n T7 T8 T9T5n
NOP1
NOP1
Command
3
5
ACT
RA Col n
WRITE2NOP1
One bank
All banks
Bank x
PRE
Bank x
NOP1NOP1NOP1
tDQSL tDQSH tWPST
Bank x4
DQ6
DM
DI
n
Don’t CareTransitioning Data
WL ±tDQSS (NOM)
tWPRE
DQS, DQS#
Address
NOP1
WL = 2
T4
Bank select
Notes: 1. NOP commands are shown for ease of illustration; other commands may be valid at
these times.
2. BL = 4 and AL = 0 in the case shown.
3. Disable auto precharge.
4. “Don’t Care” if A10 is HIGH at T9.
5. Subsequent rising DQS signals must align to the clock within tDQSS.
6. DI n = data-in for column n; subsequent elements are applied in the programmed order.
7. tDSH is applicable during tDQSS (MIN) and is referenced from CK T5 or T6.
8. tDSS is applicable during tDQSS (MAX) and is referenced from CK T6 or T7.
512Mb: x4, x8, x16 DDR2 SDRAM
WRITE
PDF: 09005aef82f1e6e2
Rev. N 1/09 EN 116 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2004 Micron Technology, Inc. All rights reserved.
Figure 67: Bank Write – with Auto Precharge
CK
CK#
CKE
A10
Bank select
tCK tCH t
CL
RA
tRCD
tRAS tRP
WR
4
T0 T1 T2 T3 T4 T5 T5n T6 T7 T8T6n
NOP1
NOP1
Command
3
ACT
RA Col n
WRITE2NOP1
Bank x
NOP1
Bank x
NOP1NOP1NOP1
tDQSL tDQSH tWPST
DQ6
DM
WL ±tDQSS (NOM)
Don’t CareTransitioning Data
tWPRE
DQS, DQS#
Address
T9
NOP1
WL = 2
DI
n
5
Notes: 1. NOP commands are shown for ease of illustration; other commands may be valid at
these times.
2. BL = 4 and AL = 0 in the case shown.
3. Enable auto precharge.
4. WR is programmed via MR9–MR11 and is calculated by dividing tWR (in ns) by tCK and
rounding up to the next integer value.
5. Subsequent rising DQS signals must align to the clock within tDQSS.
6. DI n = data-in from column n; subsequent elements are applied in the programmed order.
7. tDSH is applicable during tDQSS (MIN) and is referenced from CK T5 or T6.
8. tDSS is applicable during tDQSS (MAX) and is referenced from CK T6 or T7.
512Mb: x4, x8, x16 DDR2 SDRAM
WRITE
PDF: 09005aef82f1e6e2
Rev. N 1/09 EN 117 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2004 Micron Technology, Inc. All rights reserved.
Figure 68: WRITE – DM Operation
CK
CK#
CKE
A10
Bank select
t
CK
t
CH
t
CL
RA
t
RCD
t
RAS tRPA
tWR5
T0 T1 T2 T3 T4 T5 T7nT6 T7 T8T6n
NOP1
NOP1
Command
3
ACT
RA Col n
WRITE2
NOP1
One bank
All banks
Bank xBank x
NOP1NOP1NOP1NOP1NOP1NOP1
tDQSL tDQSH
tWPST
Bank x4
DQ7
DM
Don’t CareTransitioning Data
WL ±
t
DQSS (NOM)
tWPRE
PRE
DQS, DQS#
Address
T9 T10 T11
AL = 1 WL = 2
DI
n
6
Notes: 1. NOP commands are shown for ease of illustration; other commands may be valid at
these times.
2. BL = 4, AL = 1, and WL = 2 in the case shown.
3. Disable auto precharge.
4. “Don’t Care” if A10 is HIGH at T11.
5. tWR starts at the end of the data burst regardless of the data mask condition.
6. Subsequent rising DQS signals must align to the clock within tDQSS.
7. DI n = data-in for column n; subsequent elements are applied in the programmed order.
8. tDSH is applicable during tDQSS (MIN) and is referenced from CK T6 or T7.
9. tDSS is applicable during tDQSS (MAX) and is referenced from CK T7 or T8.
512Mb: x4, x8, x16 DDR2 SDRAM
WRITE
PDF: 09005aef82f1e6e2
Rev. N 1/09 EN 118 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2004 Micron Technology, Inc. All rights reserved.
Figure 69: Data Input Timing
DQS
DQS#
tDQSH tWPST
tDQSL
tDSS 2tDSH 1
tDSH 1tDSS 2
DM
DQ
CK
CK#
T1T0 T1n T2 T2n T3 T4T3n
DI
Don’t CareTransitioning Data
t
WPRE
3
WL - tDQSS (NOM)
Notes: 1. tDSH (MIN) generally occurs during tDQSS (MIN).
2. tDSS (MIN) generally occurs during tDQSS (MAX).
3. Subsequent rising DQS signals must align to the clock within tDQSS.
4. WRITE command issued at T0.
5. For x16, LDQS controls the lower byte and UDQS controls the upper byte.
6. WRITE command with WL = 2 (CL = 3, AL = 0) issued at T0.
PRECHARGE
Precharge can be initiated by either a manual PRECHARGE command or by an autopre-
charge in conjunction with either a READ or WRITE command. Precharge will deacti-
vate the open row in a particular bank or the open row in all banks. The PRECHARGE
operation is shown in the previous READ and WRITE operation sections.
During a manual PRECHARGE command, the A10 input determines whether one or all
banks are to be precharged. In the case where only one bank is to be precharged, bank
address inputs determine the bank to be precharged. When all banks are to be pre-
charged, the bank address inputs are treated as “Don’t Care.”
Once a bank has been precharged, it is in the idle state and must be activated prior to
any READ or WRITE commands being issued to that bank. When a single-bank PRE-
CHARGE command is issued, tRP timing applies. When the PRECHARGE (ALL) com-
mand is issued, tRPA timing applies, regardless of the number of banks opened.
512Mb: x4, x8, x16 DDR2 SDRAM
PRECHARGE
PDF: 09005aef82f1e6e2
Rev. N 1/09 EN 119 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2004 Micron Technology, Inc. All rights reserved.
REFRESH
The commercial temperature DDR2 SDRAM requires REFRESH cycles at an average in-
terval of 7.8125µs (MAX) and all rows in all banks must be refreshed at least once every
64ms. The refresh period begins when the REFRESH command is registered and ends
tRFC (MIN) later. The average interval must be reduced to 3.9µs (MAX) when TC ex-
ceeds +85°C.
Figure 70: Refresh Mode
CK
CK#
Command
NOP1
NOP1NOP1
PRE
CKE
RA
Address
A10
Bank
Bank(s)
3
BA
REF NOP1REF2NOP1ACT
NOP1
One bank
All banks
tCK tCH tCL
RA
DQ4
DM4
DQS, DQS#4
tRFC2
tRP tRFC (MIN)
T0 T1 T2 T3 T4 Ta0 Tb0
Ta1 Tb1 Tb2
Don’t Care
Indicates a break in
time scale
Notes: 1. NOP commands are shown for ease of illustration; other valid commands may be possi-
ble at these times. CKE must be active during clock positive transitions.
2. The second REFRESH is not required and is only shown as an example of two back-to-
back REFRESH commands.
3. “Don’t Care” if A10 is HIGH at this point; A10 must be HIGH if more than one bank is
active (must precharge all active banks).
4. DM, DQ, and DQS signals are all “Don’t Care”/High-Z for operations shown.
512Mb: x4, x8, x16 DDR2 SDRAM
REFRESH
PDF: 09005aef82f1e6e2
Rev. N 1/09 EN 120 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2004 Micron Technology, Inc. All rights reserved.
SELF REFRESH
The SELF REFRESH command is initiated when CKE is LOW. The differential clock
should remain stable and meet tCKE specifications at least 1 × tCK after entering self
refresh mode. The procedure for exiting self refresh requires a sequence of commands.
First, the differential clock must be stable and meet tCK specifications at least 1 × tCK
prior to CKE going back to HIGH. Once CKE is HIGH (tCKE [MIN] has been satisfied
with three clock registrations), the DDR2 SDRAM must have NOP or DESELECT com-
mands issued for tXSNR. A simple algorithm for meeting both refresh and DLL require-
ments is used to apply NOP or DESELECT commands for 200 clock cycles before
applying any other command.
512Mb: x4, x8, x16 DDR2 SDRAM
SELF REFRESH
PDF: 09005aef82f1e6e2
Rev. N 1/09 EN 121 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2004 Micron Technology, Inc. All rights reserved.
Figure 71: Self Refresh
CK1
CK#
Command
NOP REF
Address
CKE1
Valid
DQ
DM
DQS#, DQS
NOP4
tRP
8
tCH tCL tCK
1
tCK
1
tXSNR
2, 5, 10
tISXR
2
Enter self refresh
mode (synchronous)
Exit self refresh
mode (asynchronous)
T0 T1 Ta2Ta1
Don’t Care
Ta0 Tc0Tb0
tXSRD2,
7
Valid5
NOP4
tCKE (MIN)
9
T2
ODT6
tAOFD/tAOFPD
6
Td0
Valid7
Valid5
Indicates a break in
time scale
tIH
tIH
tCKE3
Notes: 1. Clock must be stable and meeting tCK specifications at least 1 × tCK after entering self
refresh mode and at least 1 × tCK prior to exiting self refresh mode.
2. Self refresh exit is asynchronous; however, tXSNR and tXSRD timing starts at the first ris-
ing clock edge where CKE HIGH satisfies tISXR.
3. CKE must stay HIGH until tXSRD is met; however, if self refresh is being re-entered, CKE
may go back LOW after tXSNR is satisfied.
4. NOP or DESELECT commands are required prior to exiting self refresh until state Tc0,
which allows any nonREAD command.
5. tXSNR is required before any nonREAD command can be applied.
6. ODT must be disabled and Rtt off (tAOFD and tAOFPD have been satisfied) prior to enter-
ing self refresh at state T1.
7. tXSRD (200 cycles of CK) is required before a READ command can be applied at state Td0.
8. Device must be in the all banks idle state prior to entering self refresh mode.
9. After self refresh has been entered, tCKE (MIN) must be satisfied prior to exiting self
refresh.
10. Upon exiting SELF REFRESH, ODT must remain LOW until tXSRD is satisfied.
512Mb: x4, x8, x16 DDR2 SDRAM
SELF REFRESH
PDF: 09005aef82f1e6e2
Rev. N 1/09 EN 122 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2004 Micron Technology, Inc. All rights reserved.
Power-Down Mode
DDR2 SDRAM supports multiple power-down modes that allow significant power sav-
ings over normal operating modes. CKE is used to enter and exit different power-down
modes. Power-down entry and exit timings are shown in Figure 72 (page 124). Detailed
power-down entry conditions are shown in Figure 73 (page 126)–Figure 80 (page 129).
Table 43 (page 125) is the CKE Truth Table.
DDR2 SDRAM requires CKE to be registered HIGH (active) at all times that an access is
in progress—from the issuing of a READ or WRITE command until completion of the
burst. Thus, a clock suspend is not supported. For READs, a burst completion is defined
when the read postamble is satisfied; for WRITEs, a burst completion is defined when
the write postamble and tWR (WRITE-to-PRECHARGE command) or tWTR (WRITE-to-
READ command) are satisfied, as shown in Figure 75 (page 127) and Figure 76
(page 127) on Figure 76 (page 127). The number of clock cycles required to meet tWTR
is either two or tWTR/tCK, whichever is greater.
Power-down mode (see Figure 72 (page 124)) is entered when CKE is registered low
coincident with an NOP or DESELECT command. CKE is not allowed to go LOW during
a mode register or extended mode register command time, or while a READ or WRITE
operation is in progress. If power-down occurs when all banks are idle, this mode is
referred to as precharge power-down. If power-down occurs when there is a row active
in any bank, this mode is referred to as active power-down. Entering power-down deac-
tivates the input and output buffers, excluding CK, CK#, ODT, and CKE. For maximum
power savings, the DLL is frozen during precharge power-down. Exiting active power-
down requires the device to be at the same voltage and frequency as when it entered
power-down. Exiting precharge power-down requires the device to be at the same volt-
age as when it entered power-down; however, the clock frequency is allowed to change
(see Precharge Power-Down Clock Frequency Change (page 130)).
The maximum duration for either active or precharge power-down is limited by the re-
fresh requirements of the device tRFC (MAX). The minimum duration for power-down
entry and exit is limited by the tCKE (MIN) parameter. The following must be main-
tained while in power-down mode: CKE LOW, a stable clock signal, and stable power
supply signals at the inputs of the DDR2 SDRAM. All other input signals are “Don’t
Care” except ODT. Detailed ODT timing diagrams for different power-down modes are
shown in Figure 85 (page 135)–Figure 90 (page 139).
The power-down state is synchronously exited when CKE is registered HIGH (in con-
junction with a NOP or DESELECT command), as shown in Figure 72 (page 124).
512Mb: x4, x8, x16 DDR2 SDRAM
Power-Down Mode
PDF: 09005aef82f1e6e2
Rev. N 1/09 EN 123 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2004 Micron Technology, Inc. All rights reserved.
Figure 72: Power-Down
CK
CK#
Command
NOP NOP NOP
Address
CKE
DQ
DM
DQS, DQS#
Valid
tCH tCL
Enter
power-down
mode6
Exit
power-down
mode Don’t Care
tCKE (MIN)2
tCKE (MIN)
2
Valid
Valid1
Valid
tXP3, tXARD4
tXARDS5
Valid Valid
tIS
tIH
tIH
T1 T2 T3 T4 T5 T6 T7 T8
tCK
Notes: 1. If this command is a PRECHARGE (or if the device is already in the idle state), then the
power-down mode shown is precharge power-down. If this command is an ACTIVATE
(or if at least one row is already active), then the power-down mode shown is active power-
down.
2. tCKE (MIN) of three clocks means CKE must be registered on three consecutive positive
clock edges. CKE must remain at the valid input level the entire time it takes to achieve
the three clocks of registration. Thus, after any CKE transition, CKE may not transition
from its valid level during the time period of tIS + 2 × tCK + tIH. CKE must not transition
during its tIS and tIH window.
3. tXP timing is used for exit precharge power-down and active power-down to any non-
READ command.
4. tXARD timing is used for exit active power-down to READ command if fast exit is selec-
ted via MR (bit 12 = 0).
5. tXARDS timing is used for exit active power-down to READ command if slow exit is selec-
ted via MR (bit 12 = 1).
6. No column accesses are allowed to be in progress at the time power-down is entered. If
the DLL was not in a locked state when CKE went LOW, the DLL must be reset after
exiting power-down mode for proper READ operation.
512Mb: x4, x8, x16 DDR2 SDRAM
Power-Down Mode
PDF: 09005aef82f1e6e2
Rev. N 1/09 EN 124 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2004 Micron Technology, Inc. All rights reserved.
Table 43: Truth Table – CKE
Notes 1–4 apply to the entire table
Current State
CKE Command (n)
CS#, RAS#, CAS#,
WE# Action (n)Notes
Previous Cycle
(n - 1)
Current
Cycle (n)
Power-down L L X Maintain power-down 5, 6
L H DESELECT or NOP Power-down exit 7, 8
Self refresh L L X Maintain self refresh 6
L H DESELECT or NOP Self refresh exit 7, 9, 10
Bank(s) active H L DESELECT or NOP Active power-down en-
try
7, 8, 11, 12
All banks idle H L DESELECT or NOP Precharge power-down
entry
7, 8, 11
H L Refresh Self refresh entry 10, 12, 13
H H Shown in Table 36 (page 74) 14
Notes: 1. CKE (n) is the logic state of CKE at clock edge n; CKE (n - 1) was the state of CKE at the
previous clock edge.
2. Current state is the state of the DDR2 SDRAM immediately prior to clock edge n.
3. Command (n) is the command registered at clock edge n, and action (n) is a result of
command (n).
4. The state of ODT does not affect the states described in this table. The ODT function is
not available during self refresh (see ODT Timing (page 133) for more details and specif-
ic restrictions).
5. Power-down modes do not perform any REFRESH operations. The duration of power-
down mode is therefore limited by the refresh requirements.
6. “X” means “Don’t Care” (including floating around Vref) in self refresh and power-
down. However, ODT must be driven high or low in power-down if the ODT function is
enabled via EMR.
7. All states and sequences not shown are illegal or reserved unless explicitly described else-
where in this document.
8. Valid commands for power-down entry and exit are NOP and DESELECT only.
9. On self refresh exit, DESELECT or NOP commands must be issued on every clock edge
occurring during the tXSNR period. READ commands may be issued only after tXSRD
(200 clocks) is satisfied.
10. Valid commands for self refresh exit are NOP and DESELECT only.
11. Power-down and self refresh can not be entered while READ or WRITE operations,
LOAD MODE operations, or PRECHARGE operations are in progress. See SELF REFRESH
(page 121) and SELF REFRESH (page 80) for a list of detailed restrictions.
12. Minimum CKE high time is tCKE = 3 × tCK. Minimum CKE LOW time is tCKE = 3 × tCK.
This requires a minimum of 3 clock cycles of registration.
13. Self refresh mode can only be entered from the all banks idle state.
14. Must be a legal command, as defined in Table 36 (page 74).
512Mb: x4, x8, x16 DDR2 SDRAM
Power-Down Mode
PDF: 09005aef82f1e6e2
Rev. N 1/09 EN 125 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2004 Micron Technology, Inc. All rights reserved.
Figure 73: READ-to-Power-Down or Self Refresh Entry
DO
CK
CK#
Command
DQ
DQS, DQS#
RL = 3
T0 T1 T2
Don’t CareTransitioning Data
NOP NOP
T3 T4 T5
Valid
T6 T7
tCKE (MIN)
Address
A10
NOP
CKE
READ
Valid
Power-down
2
or
self refresh entry
NOP1
Valid
DODO DO
Notes: 1. In the example shown, READ burst completes at T5; earliest power-down or self refresh
entry is at T6.
2. Power-down or self refresh entry may occur after the READ burst completes.
Figure 74: READ with Auto Precharge-to-Power-Down or Self Refresh Entry
CK
CK#
Command
DQ
DQS, DQS#
RL = 3
T0 T1 T2
Don’t CareTransitioning Data
NOP NOP
T3 T4 T5
Valid Valid
T6 T7
tCKE (MIN)
Address
A10
NOP
CKE
READ
Valid
Power-down or
self refresh
2
entry
NOP1
DO DODO DO
Notes: 1. In the example shown, READ burst completes at T5; earliest power-down or self refresh
entry is at T6.
2. Power-down or self refresh entry may occur after the READ burst completes.
512Mb: x4, x8, x16 DDR2 SDRAM
Power-Down Mode
PDF: 09005aef82f1e6e2
Rev. N 1/09 EN 126 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2004 Micron Technology, Inc. All rights reserved.
Figure 75: WRITE-to-Power-Down or Self Refresh Entry
CK
CK#
Command
DQ
DQS, DQS#
WL = 3
T0 T1 T2
Don’t CareTransitioning Data
NOP NOP
DO
T3 T4 T5
Valid Valid
T6
Valid
T7 T8
tCKE (MIN)
Address
A10
NOP
WRITE
Valid
Power-down or
self refresh entry1
tWTR
NOP
1
DO DO DO
CKE
Note: 1. Power-down or self refresh entry may occur after the WRITE burst completes.
Figure 76: WRITE with Auto Precharge-to-Power-Down or Self Refresh Entry
CK
CK#
Command
DQ
DQS, DQS#
WL = 3
T0 T1 T2
Don’t CareTransitioning Data
NOP NOP
DO
T3 T4 T5
Valid Valid
Ta0
Valid1NOP
Ta1 Ta2
tCKE (MIN)
Address
A10
NOP
CKE
WRITE
Valid
Power-down or
self refresh entry
WR2
DO DO DO
Indicates a break in
time scale
Notes: 1. Internal PRECHARGE occurs at Ta0 when WR has completed; power-down entry may oc-
cur 1 x tCK later at Ta1, prior to tRP being satisfied.
2. WR is programmed through MR9–MR11 and represents (tWR [MIN] ns/tCK) rounded up
to next integer tCK.
512Mb: x4, x8, x16 DDR2 SDRAM
Power-Down Mode
PDF: 09005aef82f1e6e2
Rev. N 1/09 EN 127 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2004 Micron Technology, Inc. All rights reserved.
Figure 77: REFRESH Command-to-Power-Down Entry
CK
CK#
Command
Don’t Care
T0 T1
Valid
REFRESH
T2 T3
tCKE (MIN)
CKE
Power-down1
entry
1 x tCK
NOP
Note: 1. The earliest precharge power-down entry may occur is at T2, which is 1 × tCK after the
REFRESH command. Precharge power-down entry occurs prior to tRFC (MIN) being satis-
fied.
Figure 78: ACTIVATE Command-to-Power-Down Entry
CK
CK#
Command
Don’t Care
T0 T1
Valid ACT
T2
NOP
T3
tCKE (MIN)
CKE
Power-down1
entry
1 tCK
Address
VALID
Note: 1. The earliest active power-down entry may occur is at T2, which is 1 × tCK after the ACTI-
VATE command. Active power-down entry occurs prior to tRCD (MIN) being satisfied.
512Mb: x4, x8, x16 DDR2 SDRAM
Power-Down Mode
PDF: 09005aef82f1e6e2
Rev. N 1/09 EN 128 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2004 Micron Technology, Inc. All rights reserved.
Figure 79: PRECHARGE Command-to-Power-Down Entry
CK
CK#
Command
Don’t Care
T0 T1
Valid
PRE
T2
NOP
T3
tCKE (MIN)
CKE
Power-down1
entry
1 x tCK
Address
A10
Valid
All banks
vs
Single bank
Note: 1. The earliest precharge power-down entry may occur is at T2, which is 1 × tCK after the
PRECHARGE command. Precharge power-down entry occurs prior to tRP (MIN) being sat-
isfied.
Figure 80: LOAD MODE Command-to-Power-Down Entry
CK
CK#
Command
Don’t Care
T0 T1
Valid LM
T2
NOP
T3 T4
tCKE (MIN)
CKE
Power-down
3
entry
tMRD
Address
Valid1
tRP
2
NOP
Notes: 1. Valid address for LM command includes MR, EMR, EMR(2), and EMR(3) registers.
2. All banks must be in the precharged state and tRP met prior to issuing LM command.
3. The earliest precharge power-down entry is at T3, which is after tMRD is satisfied.
512Mb: x4, x8, x16 DDR2 SDRAM
Power-Down Mode
PDF: 09005aef82f1e6e2
Rev. N 1/09 EN 129 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2004 Micron Technology, Inc. All rights reserved.
Precharge Power-Down Clock Frequency Change
When the DDR2 SDRAM is in precharge power-down mode, ODT must be turned off
and CKE must be at a logic LOW level. A minimum of two differential clock cycles must
pass after CKE goes LOW before clock frequency may change. The device input clock
frequency is allowed to change only within minimum and maximum operating frequen-
cies specified for the particular speed grade. During input clock frequency change, ODT
and CKE must be held at stable LOW levels. When the input clock frequency is changed,
new stable clocks must be provided to the device before precharge power-down may be
exited, and DLL must be reset via MR after precharge power-down exit. Depending on
the new clock frequency, additional LM commands might be required to adjust the CL,
WR, AL, and so forth. Depending on the new clock frequency, an additional LM com-
mand might be required to appropriately set the WR MR9, MR10, MR11. During the
DLL relock period of 200 cycles, ODT must remain off. After the DLL lock time, the
DRAM is ready to operate with a new clock frequency.
Figure 81: Input Clock Frequency Change During Precharge Power-Down Mode
CK
CK#
Command
Valid4NOP
Address
CKE
DQ
DM
DQS, DQS#
NOP
tCK
Enter precharge
power-down mode Exit precharge
power-down mode
T0 T1 T3 Ta0T2
Don’t Care
Valid
tCKE (MIN)
3
tXP
LM
DLL RESET
Valid
Valid
NOP
tCH tCL
Ta1 Ta2 Tb0Ta3
2 x tCK (MIN)
1
1 x tCK (MIN)
2
tCH tCL
tCK
ODT
200 x tCK
NOP
Ta4
Previous clock frequency New clock frequency
Frequency
change
Indicates a break in
time scale
High-Z
High-Z
tCKE (MIN)
3
Notes: 1. A minimum of 2 × tCK is required after entering precharge power-down prior to chang-
ing clock frequencies.
2. When the new clock frequency has changed and is stable, a minimum of 1 × tCK is re-
quired prior to exiting precharge power-down.
512Mb: x4, x8, x16 DDR2 SDRAM
Precharge Power-Down Clock Frequency Change
PDF: 09005aef82f1e6e2
Rev. N 1/09 EN 130 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2004 Micron Technology, Inc. All rights reserved.
3. Minimum CKE high time is tCKE = 3 × tCK. Minimum CKE LOW time is tCKE = 3 × tCK.
This requires a minimum of three clock cycles of registration.
4. If this command is a PRECHARGE (or if the device is already in the idle state), then the
power-down mode shown is precharge power-down, which is required prior to the
clock frequency change.
Reset
CKE Low Anytime
DDR2 SDRAM applications may go into a reset state anytime during normal operation.
If an application enters a reset condition, CKE is used to ensure the DDR2 SDRAM de-
vice resumes normal operation after reinitializing. All data will be lost during a reset
condition; however, the DDR2 SDRAM device will continue to operate properly if the
following conditions outlined in this section are satisfied.
The reset condition defined here assumes all supply voltages (Vdd, VddQ, VddL, and
Vref) are stable and meet all DC specifications prior to, during, and after the RESET op-
eration. All other input balls of the DDR2 SDRAM device are a “Don’t Care” during
RESET with the exception of CKE.
If CKE asynchronously drops LOW during any valid operation (including a READ or
WRITE burst), the memory controller must satisfy the timing parameter tDELAY before
turning off the clocks. Stable clocks must exist at the CK, CK# inputs of the DRAM be-
fore CKE is raised HIGH, at which time the normal initialization sequence must occur
(see Figure 45 (page 93)). The DDR2 SDRAM device is now ready for normal operation
after the initialization sequence. Figure 82 (page 132) shows the proper sequence for a
RESET operation.
512Mb: x4, x8, x16 DDR2 SDRAM
Reset
PDF: 09005aef82f1e6e2
Rev. N 1/09 EN 131 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2004 Micron Technology, Inc. All rights reserved.
Figure 82: RESET Function
CKE
Rtt
Bank address
High-Z
DM3
DQS3
High-Z
Address
A10
CK
CK#
tCL
Command
NOP2PRE
All banks
Ta0
Don’t CareTransitioning Data
tRPA
tCL
tCK
ODT
DQ3
High-Z
T = 400ns (MIN)
Tb0
READ NOP2
T0 T1 T2
Col n
Bank a
tDELAY
1
DODO
READ NOP2
Col n
Bank b
High-Z
High-Z
Unknown Rtt On
System
RESET
T3 T4 T5
Start of normal
5
initialization
sequence
NOP2
Indicates a break in
time scale
4
tCKE (MIN)
DO
Notes: 1. Vdd, VddL, VddQ, Vtt, and Vref must be valid at all times.
2. Either NOP or DESELECT command may be applied.
3. DM represents DM for x4/x8 configuration and UDM, LDM for x16 configuration. DQS
represents DQS, DQS#, UDQS, UDQS#, LDQS, LDQS#, RDQS, and RDQS# for the appropri-
ate configuration (x4, x8, x16).
4. In certain cases where a READ cycle is interrupted, CKE going HIGH may result in the
completion of the burst.
5. Initialization timing is shown in Figure 45 (page 93).
512Mb: x4, x8, x16 DDR2 SDRAM
Reset
PDF: 09005aef82f1e6e2
Rev. N 1/09 EN 132 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2004 Micron Technology, Inc. All rights reserved.
ODT Timing
Once a 12ns delay (tMOD) has been satisfied, and after the ODT function has been ena-
bled via the EMR LOAD MODE command, ODT can be accessed under two timing
categories. ODT will operate either in synchronous mode or asynchronous mode, de-
pending on the state of CKE. ODT can switch anytime except during self refresh mode
and a few clocks after being enabled via EMR, as shown in Figure 83 (page 134).
There are two timing categories for ODT—turn-on and turn-off. During active mode
(CKE HIGH) and fast-exit power-down mode (any row of any bank open, CKE LOW,
MR[12 = 0]), tAOND, tAON, tAOFD, and tAOF timing parameters are applied, as shown
in Figure 85 (page 135).
During slow-exit power-down mode (any row of any bank open, CKE LOW, MR[12] = 1)
and precharge power-down mode (all banks/rows precharged and idle, CKE LOW),
tAONPD and tAOFPD timing parameters are applied, as shown in Figure 86 (page 136).
ODT turn-off timing, prior to entering any power-down mode, is determined by the pa-
rameter tANPD (MIN), as shown in Figure 87 (page 136). At state T2, the ODT HIGH
signal satisfies tANPD (MIN) prior to entering power-down mode at T5. When tANPD
(MIN) is satisfied, tAOFD and tAOF timing parameters apply. Figure 87 (page 136) also
shows the example where tANPD (MIN) is not satisfied because ODT HIGH does not
occur until state T3. When tANPD (MIN) is not satisfied, tAOFPD timing parameters apply.
ODT turn-on timing prior to entering any power-down mode is determined by the pa-
rameter tANPD, as shown in Figure 88 (page 137). At state T2, the ODT HIGH signal
satisfies tANPD (MIN) prior to entering power-down mode at T5. When tANPD (MIN) is
satisfied, tAOND and tAON timing parameters apply. Figure 88 (page 137) also shows
the example where tANPD (MIN) is not satisfied because ODT HIGH does not occur
until state T3. When tANPD (MIN) is not satisfied, tAONPD timing parameters apply.
ODT turn-off timing after exiting any power-down mode is determined by the parame-
ter tAXPD (MIN), as shown in Figure 89 (page 138). At state Ta1, the ODT LOW signal
satisfies tAXPD (MIN) after exiting power-down mode at state T1. When tAXPD (MIN) is
satisfied, tAOFD and tAOF timing parameters apply. Figure 89 (page 138) also shows
the example where tAXPD (MIN) is not satisfied because ODT LOW occurs at state Ta0.
When tAXPD (MIN) is not satisfied, tAOFPD timing parameters apply.
ODT turn-on timing after exiting either slow-exit power-down mode or precharge power-
down mode is determined by the parameter tAXPD (MIN), as shown in Figure 90
(page 139). At state Ta1, the ODT HIGH signal satisfies tAXPD (MIN) after exiting power-
down mode at state T1. When tAXPD (MIN) is satisfied, tAOND and tAON timing
parameters apply. Figure 90 (page 139) also shows the example where tAXPD (MIN) is
not satisfied because ODT HIGH occurs at state Ta0. When tAXPD (MIN) is not satisfied,
tAONPD timing parameters apply.
512Mb: x4, x8, x16 DDR2 SDRAM
ODT Timing
PDF: 09005aef82f1e6e2
Rev. N 1/09 EN 133 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2004 Micron Technology, Inc. All rights reserved.
Figure 83: ODT Timing for Entering and Exiting Power-Down Mode
tANPD (3 tCKs)
First CKE latched LOW
tAXPD (8 tCKs)
First CKE latched HIGH
Synchronous
Applicable modes
Applicable timing parameters
SynchronousSynchronous or
Asynchronous
Any mode except
self refresh mode
Any mode except
self refresh mode
Active power-down fast (synchronous)
Active power-down slow (asynchronous)
Precharge power-down (asynchronous)
tAOND/tAOFD (synchronous)
tAONPD/tAOFPD (asynchronous)
tAOND/tAOFD tAOND/tAOFD
CKE
512Mb: x4, x8, x16 DDR2 SDRAM
ODT Timing
PDF: 09005aef82f1e6e2
Rev. N 1/09 EN 134 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2004 Micron Technology, Inc. All rights reserved.
MRS Command to ODT Update Delay
During normal operation, the value of the effective termination resistance can be
changed with an EMRS set command. tMOD (MAX) updates the Rtt setting.
Figure 84: Timing for MRS Command to ODT Update Delay
CK#
CK
ODT2
Internal
Rtt setting
EMRS1NOP NOPNOP NOP NOP
Command
tMOD
Old setting Undefined New setting
0ns
2
tIS
tAOFD
Indicates a break in
time scale
T0 Ta0 Ta1 Ta2 Ta3 Ta4 Ta5
Notes: 1. The LM command is directed to the mode register, which updates the information in
EMR (A6, A2), that is, Rtt (nominal).
2. To prevent any impedance glitch on the channel, the following conditions must be met:
tAOFD must be met before issuing the LM command; ODT must remain LOW for the
entire duration of the tMOD window until tMOD is met.
Figure 85: ODT Timing for Active or Fast-Exit Power-Down Mode
T1T0 T2 T3 T4 T5 T6
Valid
Valid Valid Valid
Valid Valid Valid
CK#
CK
ODT
Rtt
tAOF (MAX)
tAON (MIN)
tAOND
Address
tAOFD
tAON (MAX) tAOF (MIN)
Valid
Valid Valid Valid
Valid Valid Valid
Command
tCH tCL
Don’t CareRtt Unknown Rtt On
tCK
CKE
512Mb: x4, x8, x16 DDR2 SDRAM
ODT Timing
PDF: 09005aef82f1e6e2
Rev. N 1/09 EN 135 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2004 Micron Technology, Inc. All rights reserved.
Figure 86: ODT Timing for Slow-Exit or Precharge Power-Down Modes
Don’t Care
T1T0 T2 T3 T4 T5 T6
ValidValid Valid ValidValid Valid Valid
CK#
CK
CKE
ODT
Address
Valid
Valid Valid Valid
Valid Valid Valid
Command
tCH tCL
tAONPD (MIN)
tAONPD (MAX)
tAOFPD (MIN)
tAOFPD (MAX)
Transitioning Rtt
T7
Valid
Valid
Rtt Unknown Rtt On
tCK
Rtt
Figure 87: ODT Turn-Off Timings When Entering Power-Down Mode
T1T0 T2 T3 T4 T5 T6
NOP
NOP NOP NOP
NOP NOP NOP
CK#
CK
Command
CKE
ODT
Rtt
tAOF (MIN)
tAOF (MAX)
tAOFD
ODT
Rtt
tAOFPD (MIN)
Don’t Care
Transitioning Rtt Rtt Unknown Rtt On
tANPD (MIN)
tAOFPD (MAX)
512Mb: x4, x8, x16 DDR2 SDRAM
ODT Timing
PDF: 09005aef82f1e6e2
Rev. N 1/09 EN 136 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2004 Micron Technology, Inc. All rights reserved.
Figure 88: ODT Turn-On Timing When Entering Power-Down Mode
T1T0 T2 T3 T4 T5 T6
NOP
NOP NOP NOP
NOP NOP NOP
CK#
CK
Rtt
tAON (MIN)
tAON (MAX)
ODT
Rtt
tAONPD (MIN)
tAONPD (MAX)
Don’t CareTransitioning Rtt Rtt Unknown Rtt On
ODT
Command
tAOND
CKE
tANPD (MIN)
512Mb: x4, x8, x16 DDR2 SDRAM
ODT Timing
PDF: 09005aef82f1e6e2
Rev. N 1/09 EN 137 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2004 Micron Technology, Inc. All rights reserved.
Figure 89: ODT Turn-Off Timing When Exiting Power-Down Mode
Transitioning Rtt
T1T0 T2 T3 T4 Ta0 Ta1
NOPNOP NOP NOPNOP NOP NOP
CK#
CK
CKE
tAXPD (MIN)
ODT
R
tt
tAOF (MAX)
ODT
R
tt
tAOFPD (MIN)
tAOFPD (MAX)
Command
Ta2 Ta3 Ta4 Ta5
NOP
NOP NOP NOP
Don’t CareRtt Unknown
tAOF (MIN)
Indicates a break in
time scale Rtt On
tCKE (MIN)
tAOFD
512Mb: x4, x8, x16 DDR2 SDRAM
ODT Timing
PDF: 09005aef82f1e6e2
Rev. N 1/09 EN 138 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2004 Micron Technology, Inc. All rights reserved.
Figure 90: ODT Turn-On Timing When Exiting Power-Down Mode
T1T0 T2 T3 T4 Ta0 Ta1
NOP
NOP NOP NOP
NOP NOP NOP
CK#
CK
CKE
tAXPD (MIN)
Command
Ta2 Ta3 Ta4 Ta5
NOP
NOP NOP NOP
tAON (MIN)
tAON (MAX)
Rtt
tAONPD (MIN)
tAONPD (MAX)
Don ’ t Care
RTt Unknown Rtt On
Indicates a break in
time scale
Transitioning Rtt
tAOND
tCKE (MIN)
Rtt
ODT
ODT
8000 S. Federal Way, P.O. Box 6, Boise, ID 83707-0006, Tel: 208-368-3900
prodmktg@micron.com www.micron.com Customer Comment Line: 800-932-4992
Micron, the M logo, and the Micron logo are trademarks of Micron Technology, Inc.
All other trademarks are the property of their respective owners.
This data sheet contains minimum and maximum limits specified over the power supply and temperature range set forth herein.
Although considered final, these specifications are subject to change, as further product development and data characterization some-
times occur.
512Mb: x4, x8, x16 DDR2 SDRAM
ODT Timing
PDF: 09005aef82f1e6e2
Rev. N 1/09 EN 139 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2004 Micron Technology, Inc. All rights reserved.