APTGF50TA120P - Advanced Power Technology

APTGF50TA120P

APTGF50TA120P – Rev 0 September, 2004

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Applicatio

n

• Welding converters

• Switched Mode Power Supplies

• Uninterruptible Power Supplies

• Motor control

Features

• Non Punch Through (NPT) FAST IGBT

- Low voltage drop

- Low tail current

- Switching freque ncy up to 50 kHz

- Soft recovery parallel diodes

- Low diode VF

- Low leakage current

- Avalanche energy rated

- RBSOA and SCSOA rated

• Kelvin emitter for easy drive

• Very low stray inductance

- Symmetrical design

- Lead frames for power connections

• High level of integration

Benefits

• Outsta ndi ng perfor mance at hi gh freq uency

operation

• Direct mounting to heatsink (isolated package)

• Low junction to case thermal resistance

• Solderable terminals both for power and signal for

easy PCB mounting

• Very low (12mm) profile

• Easy paralleling due to positive TC of VCEsat

• Each leg can be easily paralleled to achieve a phase

leg of three times the current capability

• Module can be configured as a three phase bridge

• Module can be configured as a boost followed by a

full bridge

Absolute maximum ratings

These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.

VBUS1 VBUS2 VBUS3

W

E6

0/VB US3

V

G6

E5

0/VB US1

G2

E1

E2

0/VB US2

U

E3

E4

G4

G1 G3 G5

G5

G6

E6

E5

G3

VBUS 2 VBUS 3

G4

E4

WV

E3 0/VBUS 3

0/VBUS 2

G1

VBUS 1

U

E2

G2

0/VBUS 1 E1

S

ymbol Parameter Ma

x

ratings Unit

VCES Collector - Emitter Breakdown Voltage 1200 V

Tc = 25°C 75

IC Continuous Collector Current Tc = 80°C 50

ICM Pulsed Collector Current Tc = 25°C 150

A

VGE Gate – Emitter Voltage ±20 V

PD Maximum Power Dissipation Tc = 25°C 312 W

RBSOA Reverse Bias Safe Operating Area Tj = 150°C 150A @ 1200V

VCES = 1200V

IC = 50A @ Tc = 80°C

Triple phase leg

NPT IGBT Power Module

APTGF50TA120P

APTGF50TA120P – Rev 0 September, 2004

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All ratings @ Tj = 25°C unless otherwise specified

Electrical Characteristics

Symbol Characteristic Test Conditions Min Typ Max Unit

BVCES Collector - Emitter Breakdown Voltage VGE = 0V, IC = 500 µA 1200 V

Tj = 25°C 500

ICES Zero Gate Voltage Collector Current VGE = 0V

VCE = 1200V Tj = 125°C 2500

µA

Tj = 25°C 3.2 3.7

VCE(on) Collector Emitter on Voltage VGE =15V

IC = 50A Tj = 125°C 4.0 V

VGE(th) Gate Threshold Voltage VGE = VCE, IC = 1 mA 4.5 6.5 V

IGES Gate – Emitter Leakage Current VGE = ±20 V, VCE = 0V 100 nA

Dynamic Characteristics

Symbol Characteristic Test Conditions Min Typ Max Unit

Cies Input Capacitance 3450

Coes Output Capacitance 330

Cres Reverse Transfer Capacitance

VGE = 0V

VCE = 25V

f = 1MHz 220

pF

Qg Total gate Charge 330

Qge Gate – Emitter Charge 35

Qgc Gate – Collector Charge

VGS = 15V

VBus = 600V

IC = 50A 200

nC

Td(on) Tur n-on Delay Ti me 35

Tr Rise Time 65

Td(off) Turn-off Delay Time 320

Tf Fall Time 30

ns

Eon Tur n-o n Switchi ng Energy X 5.4

Eoff Turn-off Switching Energy Y

Inductive Switching (25°C)

VGE = 15V

VBus = 600V

IC = 50A

RG = 5Ω

2.3 mJ

Td(on) Tur n-on Delay Ti me 35

Tr Rise Time 65

Td(off) Turn-off Delay Time 360

Tf Fall Time 40

ns

Eon Tur n-o n Switchi ng Energy X 6.9

Eoff Turn-off Switching Energy Y

Inductive Switching (125°C)

VGE = 15V

VBus = 600V

IC = 50A

RG = 5Ω

3.05 mJ

X Eon includes diode reverse recovery

Y In accordance with JEDEC standard JESD24-1

APTGF50TA120P

APTGF50TA120P – Rev 0 September, 2004

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Reverse diode ratings and characteristics

Symbol Characteristic Test Conditions Min Typ Max Unit

VRRM Maximum Peak Repetitive Reverse Voltage 1200 V

Tj = 25°C 250

IRM Maximum Reverse Leakage Current VR=1200V Tj = 125°C 500 µA

IF(A V) Maximum Average Forward Current 50% duty cycle Tc = 70°C 60 A

IF = 60A 2 2.5

IF = 120A 2.3

VF Diode Forward Voltage

IF = 60A Tj = 125°C 1.8

V

Tj = 25°C 400

trr Reverse Recovery Time

Tj = 125°C 470

ns

Tj = 25°C 1200

Qrr Reverse Recovery Charge

IF = 60A

VR = 800V

di/dt =200A/µs

Tj = 125°C 4000 nC

Thermal and package characteristics

Symbol Characteristic Min Typ Max Unit

IGBT 0.4

RthJC Junction to Case Diode 0.9

°C/W

VISOL RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz 2500 V

TJ Operating junction temperature range -40 150

TSTG Storage Temperature Range -40 125

TC Operating Case Temperature -40 100

°C

Torque Mounting torque To heatsink M6 3 5 N.m

Wt Package Weight 250 g

Package outline

5 places (3:1)

APTGF50TA120P

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Typical Performance Curve

Output character istics (VGE=15V)

TJ=25°C

TJ=125°C

0

40

80

120

160

200

02468

Ic, Collector Current (A)

VCE, Collector to Emitter Voltage (V)

250µs Pulse Test

< 0.5% Dut

y

c

y

cle

Output Characteristics (VGE=10V)

TJ=25° C

TJ=125°C

0

10

20

30

40

50

01234

Ic, Collector Current (A)

VCE , Collector to Emitter Voltage (V)

250µs Pulse Test

< 0.5% Dut

y

c

y

cle

Transfer Characteristics

TJ=25°C

TJ=125°C

0

50

100

150

200

250

300

0 4 8 12 16

VGE, Gate to Emitter Voltage (V)

Ic, Collector Current (A)

250µs Pulse Test

< 0.5% Dut

y

c

y

cle

Gate Charge

VCE=240V

VCE=600V

VCE=960V

0

2

4

6

8

10

12

14

16

18

0 50 100 150 200 250 300 350

Gate Char ge (nC)

VGE, Gate to Emitter Voltage (V)

IC = 50A

TJ = 25°C

Ic=100A

Ic=50A

Ic=25A

0

1

2

3

4

5

6

7

8

9

9 10111213141516

VGE, Gate to Emitter Vo ltage (V)

On state Voltage vs Gate to Emitter Volt.

VCE, Collector to Emitter Vo ltag e (V)

TJ = 25°C

250µs Pulse Test

< 0.5% Duty cycle

Ic=100A

Ic=50A

Ic=25A

0

1

2

3

4

5

6

-50 -25 0 25 50 75 100 125

TJ, Junction Temperature (°C)

VCE

, Collector to E mitter Voltage (V)

On state Voltage vs Junction Temperature

250µs Pulse Test

< 0.5% Duty cycle

VGE = 15V

0.70

0.75

0.80

0.85

0.90

0.95

1.00

1.05

1.10

1.15

1.20

-50-250 255075100125

TJ, Junction Temperature (°C)

Collecto r to Emitter Breakd own Vo ltage

(Normalized)

Breakdown Voltage vs Junction Temp.

0

10

20

30

40

50

60

70

80

90

-50 -25 0 25 50 75 100 125 150

TC, Case Temperature (°C)

Ic, DC Co llect or Cu rren t (A)

DC Collector Current vs Case Temperature

APTGF50TA120P

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VGE = 15V

25

30

35

40

45

0 25 50 75 100 125

ICE, Collector to Emitter Current (A)

td(on), Turn-On Delay Time (ns)

Turn-On Delay Time vs Collector Current

VCE = 600V

RG = 5Ω

VGE=15V,

TJ=25°C

VGE=15V,

TJ=125°C

200

250

300

350

400

0 255075100125

ICE, Collector to Emitter Curr ent (A)

Turn-Off Delay Time vs Collector Current

td(off), Turn-Off Delay Time (ns

)

VCE = 600V

RG = 5Ω

VGE=15V

20

60

100

140

180

0 25 50 75 100 125

ICE, Collector to Emitter Current (A)

tr, Rise Time (ns)

Current Rise Time vs Collector Current

VCE = 600V

RG = 5Ω

TJ = 2 5°C

TJ = 125°C

20

30

40

50

0 255075100125

ICE, Collector to Emitter Current (A)

tf, Fall Time (ns)

Current Fall Time vs Collector Current

VCE = 600V, VGE = 15 V, RG = 5Ω

TJ=25°C,

VGE=15V

TJ=125°C,

VGE=15V

0

4

8

12

16

20

24

28

0 255075100125

ICE, Collector to Emitter Current (A)

Tu rn-On Energy Loss vs Collector Curren

t

Eon, Turn-On Energy Loss (mJ)

VCE = 600V

RG = 5Ω

TJ = 25°C

TJ = 125°C

0

2

4

6

8

0 255075100125

ICE, Collector to Emitter Current (A)

Eoff, Turn-off Energy Loss (mJ)

Turn-Off Energy Loss vs Collector Current

VCE = 600V

VGE = 15V

RG = 5Ω

Eon, 50A

Eoff, 50A

Eon, 25A

Eoff, 25A

0

2

4

6

8

10

12

14

16

18

0 1020304050

Gate Resistance (Ohms)

Switching Energy Losses (mJ)

Switching Energy Losses vs Gate Resistance

VCE = 600V

VGE = 15V

TJ= 125°C

Eon, 50A

Eoff, 50A

Eon, 25A

Eoff, 25A

0

2

4

6

8

0 25 50 75 100 125

TJ, Junction Temperature (°C)

Switching Energy Losses (mJ)

Switching Energy Losses vs Junction Temp.

VCE = 600V

VGE = 15V

RG = 5Ω

APTGF50TA120P

APTGF50TA120P – Rev 0 September, 2004

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Cies

Cres

Coes

100

1000

10000

0 1020304050

C, Capacitance (pF)

Capacitance vs Collector to Emitter Voltag

e

VCE, Collector to Emitter Voltage (V)

0

20

40

60

80

100

120

140

160

04008001200

IC, Collector Current (A)

Minimum Switching Safe Operating Area

VCE, Collector to Emitter Voltage (V)

0.9

0.7

0.5

0.3

0.1

0.05 Single Pulse

0

0.05

0.1

0.15

0.2

0.25

0.3

0.35

0.4

0.45

0.00001 0.0001 0.001 0.01 0.1 1

Rectangular Pulse Duration (Seconds)

Thermal Impedance (°C/W)

Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration

Hard

switching

ZCS

ZVS

0

20

40

60

80

100

120

10 20 30 40 50 60

IC, Collector Current (A)

Operating Frequency vs Collector Current

Fmax, Operating Frequency (kHz)

VCE = 600V

D = 50%

RG = 5Ω

TJ = 125°C

T

C

= 75°C

APT rese rves the rig ht to c ha nge , without notice , the s pe cificatio ns and info rmatio n co nta ine d he rein

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