November 2009 Doc ID 15606 Rev 2 1/16
16
STB200N6F3, STI200N6F3
STP200N6F3
N-channel 60 V, 3 mΩ, 120 A D2PAK, TO-220, I2PA K
STripFET™ Power MOSFET
Features
■Ultra low on-resistance
■100% avalanche tested
Application
■Switching applications
Description
This STripFET™ III Power MOSFET technology
is among the latest improvements, which have
been especially tailored to minimize on-state
resistance providing superior switching
performance.
Figure 1. Internal schematic diagram
Type VDSS RDS(on) IDPw
STB200N6F3 60 V < 3.5 mΩ120 A(1)
1. Value limited by wire bonding
330 W
STI200N6F3 60 V < 3.8 mΩ120 A(1) 330 W
STP200N6F3 60 V < 3.8 mΩ120 A(1) 330 W
D2PAK
1
3
TO-220
123
123
I2PAK
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Table 1. Device summary
Order codes Marking Package Packaging
STB200N6F3 200N6F3 D2PAK Tape and reel
STI200N6F3 200N6F3 I2PA K Tu b e
STP200N6F3 200N6F3 TO-220 Tube
www.st.com
Contents STB200N6F3, STI200N6F3, STP200N6F3
2/16 Doc ID 15606 Rev 2
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
STB200N6F3, STI200N6F3, STP200N6F3 Electrical ratings
Doc ID 15606 Rev 2 3/16
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
VDS Drain-source voltage (VGS=0) 60 V
VGS Gate-source voltage ± 20 V
ID (1)
1. Current limited by package.
Drain current (continuous) at TC = 25°C 120 A
ID (1) Drain current (continuous) at TC=100°C 120 A
IDM (2)
2. Pulse width limited by safe operating area.
Drain current (pulsed) 480 A
PTOT Total dissipation at TC = 25°C 330 W
Derating factor 2.2 W/°C
EAS (3)
3. Starting Tj = 25 °C, ID = 60 A, VDD = 35 V (see Figure 18 and Figure 19)
Single pulse avalanche energy 918 mJ
Tj
Tstg
Operating junction temperature
storage temperature -55 To 175 °C
Table 3. Thermal data
Symbol Parameter TO-220/I²PAK D²PAK Unit
Rthj-case Thermal resistance junction-case 0.45 °C/W
Rthj-a Thermal resistance junction-ambient
max 62.5 °C/W
Rthj-pcb(1)
1. When mounted on 1 inch² FR4 2oz Cu.
Thermal resistance junction-ambient
max 50 °C/W
Tl
Maximum lead temperature for
soldering purpose 300 °C
Electrical characteristics STB200N6F3, STI200N6F3, STP200N6F3
4/16 Doc ID 15606 Rev 2
2 Electrical characteristics
(TCASE=25 °C unless otherwise specified)
Table 4. On/off states
Symbol Parameter Test conditions Min. Typ. Max. Unit
V(BR)DSS
Drain-source breakdown
voltage ID = 250 µA, VGS= 0 60 V
IDSS
Zero gate voltage drain
current (VGS = 0)
VDS= max rating,
VDS= max rating,@125°C
10
100
µA
µA
IGSS
Gate body leakage current
(VDS = 0) VGS = ±20 V ±200 nA
VGS(th) Gate threshold voltage VDS= VGS, ID = 250 µA 2 4 V
RDS(on)
Static drain-source on
resistance
VGS= 10 V, ID= 60 A
D²PAK
TO-220, I²PAK
3
3.3
3.5
3.8
mΩ
mΩ
Table 5. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 25 V, f = 1MHz,
VGS = 0 -
6265
1295
43
-
pF
pF
pF
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
VDD = 30 V, ID = 60 A
RG=4.7 Ω VGS = 10 V
(see Figure 15,
Figure 20)
-
26
75
86
14
-
ns
ns
ns
ns
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD = 30 V, ID = 120 A,
VGS = 10 V,
(see Figure 16)
-
101
36
25.2
-
nC
nC
nC
STB200N6F3, STI200N6F3, STP200N6F3 Electrical characteristics
Doc ID 15606 Rev 2 5/16
Table 6. Source drain diode
Symbol Parameter Test conditions Min. Typ. Max. Unit
ISD
ISDM(1)
1. Pulse width limited by safe operating area
Source-drain current
Source-drain current
(pulsed)
-120
480
A
A
VSD(2)
2. Pulsed: pulse duration = 300µs, duty cycle 1.5%
Forward on voltage ISD=120 A, VGS=0 - 1.5 V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD=120 A,
di/dt = 100 A/µs,
VDD=48 V, Tj=150 °C
(see Figure 17)
-
67
177.6
5.3
ns
nC
A
Electrical characteristics STB200N6F3, STI200N6F3, STP200N6F3
6/16 Doc ID 15606 Rev 2
2.1 Electrical characteristics (curves)
Figure 2. Safe operating area for TO-220,
I²PAK
Figure 3. Thermal impedance for TO-220,
I²PAK
Figure 4. Safe operating area for D²PAK Figure 5. Thermal impedance for D²PAK
Figure 6. Output characteristics Figure 7. Transfer characteristics
I
D
100
10
1
0.1
0.1 1V
DS
(V)
10
(A)
Operation in this area is
Limited by max R
DS(on)
100µs
1ms
10ms
Tj=175°C
Tc=25°C
Single
pulse
AM05515v1
10
-5
10
-4
10
-3
10
-2
10
-1
t
p
(s)
10
-2
10
-1
K
0.2
0.05
0.02
0.01
0.1
Zth=k Rthj-c
δ=tp/τ
tp
τ
Single pulse
δ=0.5
280tok
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10
-5
10
-4
10
-3
10
-2
10
-1
t
p
(s)
10
-2
10
-1
K
0.2
0.05
0.02
0.01
0.1
Zth=k Rthj-c
δ=tp/τ
tp
τ
Single pulse
δ=0.5
280tok
I
D
150
100
50
002V
DS
(V)
4
(A)
135
200
250
5V
6V
7V
V
GS
=10V
300
350
AM05516v1
I
D
150
100
50
004V
GS
(V)
8
(A)
2610
200
250
V
DS
=10V
300
350
AM05517v1
STB200N6F3, STI200N6F3, STP200N6F3 Electrical characteristics
Doc ID 15606 Rev 2 7/16
Figure 8. Normalized BVDSS vs temperature Figure 9. Static drain-source on resistance
Figure 10. Gate charge vs gate-source voltage Figure 11. Capacitance variations
Figure 12. Normalized gate threshold voltage
vs temperature
Figure 13. Normalized on resistance vs
temperature
BV
DSS
-50 0T
J
(°C)
(norm)
-25 75
25 50 100
0.92
0.95
0.98
1.00
1.03
1.06
AM00897v1
R
DS(on)
3.15
3.10
3.05
3.00020 I
D
(A)
(mΩ)
10 30
3.20
3.25
40 50 60
AM05519v1
V
GS
6
4
2
0020 Q
g
(nC)
(V)
80
8
40 60
10
V
DD
=30V
I
D
=120A
100
12
120
AM05520v1
C
6010
4010
2010
10
020 V
DS
(V)
(pF)
10
8010
30
Ciss
Coss
Crss
10010
12010
14010
40 50
AM05521v1
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Electrical characteristics STB200N6F3, STI200N6F3, STP200N6F3
8/16 Doc ID 15606 Rev 2
Figure 14. Source-drain diode forward
characteristics
T
J
=-55°C
T
J
=175°C
T
J
=25°C
V
SD
020 I
SD
(A)
(V)
10 50
3040
0.4
0.5
0.6
0.7
0.8
0.9
0.3
AM05524v1
STB200N6F3, STI200N6F3, STP200N6F3 Test circuits
Doc ID 15606 Rev 2 9/16
3 Test circuits
Figure 15. Switching times test circuit for
resistive load
Figure 16. Gate charge test circuit
Figure 17. Test circuit for inductive load
switching and diode recovery times
Figure 18. Unclamped inductive load test
circuit
Figure 19. Unclamped inductive waveform Figure 20. Switching time waveform
AM01468v1
VGS
PW
VD
RG
RL
D.U.T.
2200
µF
3.3
µFVDD
AM01469v1
VDD
47kΩ1kΩ
47kΩ
2.7kΩ
1kΩ
12V
Vi=20V=VGMAX
2200
µF
PW
IG=CONST
100Ω
100nF
D.U.T.
VG
AM01470v1
A
D
D.U.T.
S
B
G
25 Ω
AA
BB
RG
G
FAST
DIODE
D
S
L=100µH
µF
3.31000
µFVDD
AM01471v1
Vi
Pw
VD
ID
D.U.T.
L
2200
µF
3.3
µFVDD
AM01472v1
V(BR)DSS
VDD
VDD
VD
IDM
ID
AM01473v1
VDS
ton
tdon tdoff
toff
tf
tr
90%
10%
10%
0
0
90%
90%
10%
VGS
Package mechanical data STB200N6F3, STI200N6F3, STP200N6F3
10/16 Doc ID 15606 Rev 2
4 Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com. ECOPACK
is an ST trademark.
STB200N6F3, STI200N6F3, STP200N6F3 Package mechanical data
Doc ID 15606 Rev 2 11/16
DPAK (TO-263) mechanical data
Dim hcnimm
Min Typ Max Min Typ Max
181.0371.006.404.4A
900.0100.032.030.01A
730.0720.039.007.0b
760.0540.007.141.12b
420.0710.006.05
4.0c
350.0840.063.132.12c
863.0253.053.959.8D
592.005.71D
904.0493.004.0101E
433.005.81E
1.045.2e
802.0291.0
82.588.41e
426.0095.058.5151H
601.0990.096.294.21J
011.0090.097.292.2L
550.050.004.172.11L
960.0150.057.10
3.12L
610.04.0R
°8°0°8°02V
0079457_M
Package mechanical data STB200N6F3, STI200N6F3, STP200N6F3
12/16 Doc ID 15606 Rev 2
I²PAK (TO-262) mechanical data
Dim mm inch
Min Typ Max Min Typ Max
A 4.40 4.60 0.1730.181
A1 2.40 2.72 0.094 0.107
b0.61 0.88 0.024 0.034
b1 1.14 1.70 0.044 0.066
c 0.49 0.70 0.019 0.027
c2 1.231.320.0480.052
D8.95 9.35 0.352 0.368
e 2.40 2.70 0.094 0.106
e1 4.95 5.15 0.194 0.202
E 10 10.40 0.3930.410
L1314 0.511 0.551
L1 3.50 3.930.137 0.154
L2 1.27 1.40 0.050 0.055
STB200N6F3, STI200N6F3, STP200N6F3 Package mechanical data
Doc ID 15606 Rev 2 13/16
TO-220 type A mechanical data
Dim mm
Min Typ Max
A 4.40 4.60
b0.61 0.88
b1 1.14 1.70
c0.480.70
D 15.25 15.75
D1 1.27
E10 10.40
e 2.40 2.70
e1 4.95 5.15
F1.231.32
H1 6.20 6.60
J1 2.40 2.72
L1314
L1 3.50 3.93
L20 16.40
L3028.90
∅P3.75 3.85
Q 2.65 2.95
0015988_Rev_S
Packaging mechanical data STB200N6F3, STI200N6F3, STP200N6F3
14/16 Doc ID 15606 Rev 2
5 Packaging mechanical data
TAPE AND REEL SHIPMENT
D2PAK FOOTPRINT
* on sales type
DIM. mm inch
MIN. MAX. MIN. MAX.
A 330 12.992
B1.5 0.059
C 12.8 13.2 0.504 0.520
D20.2 0795
G 24.4 26.4 0.960 1.039
N100 3.937
T 30.4 1.197
BASE QTY BULK QTY
1000 1000
REEL MECHANICAL DATA
DIM. mm inch
MIN. MAX. MIN. MAX.
A0 10.5 10.7 0.413 0.421
B0 15.7 15.9 0.618 0.626
D 1.5 1.6 0.059 0.063
D1 1.59 1.61 0.062 0.063
E 1.65 1.85 0.065 0.073
F11.4 11.6 0.449 0.456
K0 4.8 5.0 0.189 0.197
P0 3.9 4.1 0.153 0.161
P1 11.9 12.1 0.468 0.476
P2 1.9 2.1 0.075 0.082
R 50 1.574
T 0.25 0.35 0.0098 0.0137
W23.7 24.3 0.933 0.956
TAPE MECHANICAL DATA
STB200N6F3, STI200N6F3, STP200N6F3 Revision history
Doc ID 15606 Rev 2 15/16
6 Revision history
Table 7. Document revision history
Date Revision Changes
20-Apr-2009 1 First version.
18-Nov-2009 2 Document status promoted from preliminary data to datasheet.
STB200N6F3, STI200N6F3, STP200N6F3
16/16 Doc ID 15606 Rev 2
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