2N4150 Silicon NPN Transistor Data Sheet Description Applications SEMICOA Corporation offers: * General purpose * Low power, High voltage * NPN silicon transistor * Screening and processing per MIL-PRF-19500 Appendix E * JAN level (2N4150J) * JANTX level (2N4150JX) * JANTXV level (2N4150JV) * QCI to the applicable level * 100% die visual inspection per MIL-STD-750 method 2072 for JANTXV * Radiation testing (total dose) upon request Features * * * * Hermetically sealed TO-5 metal can Also available in chip configuration Chip geometry 3101 Reference document: MIL-PRF-19500/394 Benefits * Qualification Levels: JAN, JANTX, and JANTXV * Radiation testing available Please contact SEMICOAfor special configurations www.SEMICOA.com or (714) 979-1900 Absolute Maximum Ratings Parameter Collector-Emitter Voltage TC = 25C unless otherwise specified Symbol VCEO Rating 70 Collector-Base Voltage VCBO 100 Unit Volts Volts Emitter-Base Voltage VEBO 10 Volts IC 10 A 1 5.7 5 50 .175 .020 W mW/C W mW/C -65 to +200 C Collector Current, Continuous Power Dissipation, TA = 25C Derate linearly above 25C Power Dissipation, TC = 25C Derate linearly above 100C PT PT Thermal Resistance RJA RJC Operating Junction Temperature Storage Temperature TJ TSTG Copyright 2010 Rev. F C/W SEMICOA Corporation 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 www.SEMICOA.com Page 1 of 2 2N4150 Silicon NPN Transistor Data Sheet ELECTRICAL CHARACTERISTICS characteristics specified at TA = 25C Off Characteristics Parameter Symbol Collector-Emitter Breakdown Voltage V(BR)CEO Test Conditions Min IC = 100 mA Typ Max Units Volts 70 Collector-Base Cutoff Current ICBO1 ICBO2 VCB = 100 Volts VCB = 80 Volts, 10 100 Collector-Emitter Cutoff Current ICEO VCE = 60 Volts 10 A nA A Collector-Emitter Cutoff Current ICEX1 ICEX2 VCE = 60Volts, VEB= .5Volts VCE = 60Volts, VEB= .5Volts, TA = 150C VEB = 7 Volts VEB = 5 Volts 10 100 A 10 100 A nA Emitter-Base Cutoff Current IEBO1 IEBO2 On Characteristics Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0% Parameter Symbol hFE1 hFE2 hFE3 hFE4 DC Current Gain Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage VBEsat1 VBEsat2 VCEsat1 VCEsat2 Test Conditions IC = 1 A, VCE = 5 Volts IC = 5 A, VCE = 5 Volts IC = 10 A, VCE = 5 Volts IC = 5 A, VCE = 5 Volts TA = -55C IC = 5 A, IB = 500 mA IC = 10 A, IB = 1 A IC = 5 A, IB = 500 mA IC = 10 A, IB = 1 A Min 50 40 10 20 Test Conditions VCE = 10 Volts, IC = 200 mA, f = 10 MHz VCE = 5 Volts, IC = 50 mA, f = 1 kHz VCB = 10 Volts, IE = 0 mA, 100 kHZ < f < 1 MHz Min Typ Max 200 120 Units 1.5 2.5 0.6 2.5 Volts Max Units Volts Dynamic Characteristics Parameter Magnitude - Common Emitter, Short Circuit Forward Current Transfer Ratio Small Signal Short Circuit Forward Current Transfer Ratio Open Circuit Output Capacitance Symbol |hFE| hFE COBO Typ 1.5 7.5 40 160 350 pF 50 500 1.5 500 ns Switching Characteristics Delay Time Rise Time Storage Time Fall Time Copyright 2010 Rev. F td tr ts tf IC = 5 A, IB = 500 mA, IC = 5 A, IB1= -IB2 = 500 mA s ns SEMICOA Corporation 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 www.SEMICOA.com Page 2 of 2