SIM75D06AV1 Preliminary "HALF-BRIDGE" IGBT MODULE VCES = 600V Ic= 75A VCE(ON) typ. = 1.5V Applications Feature @Ic= 75A Motor controls Smart field stopper +Trench VVVF inverters design technology Inverter-type welding MC over 18KHZ Low VCE (sat) SMPS, Electrolysis Low Turn-off losses UPS/EPS, Robotics Short tail current for over 20KHz Package : V1 Absolute Maximum Ratings @ Tj=25 (Per Leg) Symbol Parameter VCES Collector-to-Emitter Voltage VGES Gate emitter voltage Condition TC = 25 Ratings Unit 600 V 20 V 75 (100) A 140 A 75 (100) A IC Continuous Collector Current TC = 80 (25) ICP Pulsed collector current TC = 25 IF Diode Continuous Forward Current TC = 80 (25) Diode Maximum Forward Current TC = 25 140 A Short circuit test, VGE = 15V, VCC = 360V TC = 150 (25) 6 (8) Viso Isolation Voltage test AC @ 1 minute 2500 V Tj Junction Temperature -40 ~ 150 Tstg Storage Temperature -40 ~ 125 Weight of Module 190 g Mounting torque with screw : M5 2.0 N.m Terminal connection torque : M5 2.0 N.m IFM tp Weight Md Static Characteristics @ Tj = 25 (unless otherwise specified) Parameters VCE(ON) Min Collector-to-Emitter Saturation Voltage Typ Max Unit 1.50 V VGE(th) Gate Threshold Voltage 5.8 Test conditions IC = 75A, VGE = 15V VCE = VGE, IC = 4 ICES Zero Gate Voltage Collector Current 5.0 VGE = 0V, VCE = 600V IGES Gate-to-Emitter Leakage Current 400 VCE = 0V, VGE = 20V Diode Forward Voltage Drop 1.6 2.0 V IF = 75A, VGE = 0V Integrated gate resistor 4 VF RGINT -1- SIM75D06AV1 Preliminary Electrical Characteristic Values (IGBT / DIODE) @ Tj = 25 (unless otherwise specified) Parameters Min Typ Max Ciss Input capacitance 4700 Coss Output capacitance 300 Crss Reverse transfer capacitance 145 td(on) Turn-on delay time 25 Rise time 18 Unit Test conditions VCE = 25V , VGE = 0V pF f = 1 MHz tr Inductive Switching (125) VCC = 300V ns Turn-off delay time 210 IC = 75A, VGE = 15V Fall time 60 RG = 1.2 600 V Maximum Reverse leakage current 250 VR = 600V trr Reverse Recovery Time 125 ns IF = 75A, VR = 300V Qrr Reverse Recovery Charge 7.6 C di / dt = 2000A / td(off) tf VRRM IRM Maximum Peak Repetitive Reverse Voltage Data and specifications subject to change without notice. Thermal Characteristics Symbol Parameter Min Typ Max RJC Junction-to-Case (IGBT Part, Per 1/2 Module) - - 0.60 RJC Junction-to-Case (Diode Part, Per 1/2 Module) - - 0.98 RCS Case-to-Heat Sink (Conductive grease applied) - 0.05 - -2- Unit /W Preliminary SIM75D06AV1 Fig 1. Typ. IGBT Output Characteristics Fig 2. Typ. IGBT Out Characteristics Fig 3. Typ. Transfer Characteristics Fig 4. Reverse Bias Operating Area Fig 5. Forward Characteristics of Diode Fig 6. Operating Frequency vs Collector Current -3- Preliminary SIM75D06AV1 Package Outline (dimensions in mm) JUNE 2008 Headquarter: Sales & Marketing #602, B/D, 402 BLD, BLK4, Techno-park, Wonmi-Gu, clzhang@semwiell.com Bucheon-City, S.KOREA sales@semiwell.com Tel)+82-32-234-4781, Fax)+82-32-234-4789 -4-