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SIM75D06AV1
Preliminary
Feature
▪ Smart field stopper +Trench
design technology
▪ Low V
CE
(sat)
▪ Low Turn-off losses
▪ Short tail current for over 20KHz
Applications
▪ Motor controls
▪ VVVF inverters
▪ Inverter-type welding MC over 18KHZ
▪ SMPS, Electrolysis
▪ UPS/EPS, Robotics
Package : V1
“HALF-BRIDGE” IGBT MODULE
Absolute Maximum Ratings @ Tj=25℃ (Per Leg)
Symbol Parameter Condition Ratings Unit
VCES Collector-to-Emitter Voltage TC = 25℃ 600 V
VGES Gate emitter voltage ± 20 V
IC Continuous Collector Current TC = 80℃ (25℃) 75 (100) A
ICP Pulsed collector current TC = 25℃ 140 A
IF Diode Continuous Forward Current TC = 80℃ (25℃) 75 (100) A
IFM Diode Maximum Forward Current TC = 25℃ 140 A
tp Short circuit test, VGE = 15V, VCC = 360V TC = 150℃ (25℃) 6 (8) ㎲
Viso Isolation Voltage test AC @ 1 minute 2500 V
Tj Junction Temperature -40 ~ 150 ℃
Tstg Storage Temperature -40 ~ 125 ℃
Weight Weight of Module 190 g
Md Mounting torque with screw : M5 2.0 N.m
Terminal connection torque : M5 2.0 N.m
Static Characteristics @ Tj = 25℃ (unless otherwise specified)
Parameters Min Typ Max Unit Test conditions
VCE(ON) Collector-to-Emitter Saturation Voltage 1.50
V
IC = 75A, VGE = 15V
VGE(th) Gate Threshold Voltage 5.8 VCE = VGE, IC = 4㎃
ICES Zero Gate Voltage Collector Current ㅡ ㅡ 5.0 ㎃ VGE = 0V, VCE = 600V
IGES Gate-to-Emitter Leakage Current ㅡ ㅡ 400 ㎁ VCE = 0V, VGE = 20V
VF Diode Forward Voltage Drop ㅡ 1.6 2.0 V IF = 75A, VGE = 0V
RGINT Integrated gate resistor ㅡ 4 ㅡ Ω
VCES = 600V
Ic= 75A
VCE(ON) typ. = 1.5V
@Ic= 75A
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SIM75D06AV1
Preliminary
Electrical Characteristic Values (IGBT / DIODE) @ Tj = 25℃ (unless otherwise specified)
Parameters Min Typ Max Unit Test conditions
Ciss Input capacitance ㅡ 4700 ㅡ
pF
VCE = 25V , VGE = 0V
f = 1 MHz
Coss Output capacitance ㅡ 300 ㅡ
Crss Reverse transfer capacitance ㅡ 145 ㅡ
td(on) Turn-on delay time ㅡ 25 ㅡ
ns
Inductive Switching (125℃)
VCC = 300V
IC = 75A, VGE = ±15V
RG = 1.2Ω
tr Rise time ㅡ 18 ㅡ
td(off) Turn-off delay time ㅡ 210 ㅡ
tf Fall time ㅡ 60 ㅡ
VRRM
Maximum Peak Repetitive Reverse Voltage
600 ㅡ ㅡ V
IRM Maximum Reverse leakage current ㅡ ㅡ 250 ㎂ VR = 600V
trr Reverse Recovery Time ㅡ 125 ㅡ ns IF = 75A, VR = 300V
di / dt = 2000A /㎲
Qrr Reverse Recovery Charge ㅡ 7.6 ㅡ
µC
Thermal Characteristics
Symbol Parameter Min Typ Max Unit
RΘJC Junction-to-Case (IGBT Part, Per 1/2 Module) - - 0.60
℃/W
RΘJC Junction-to-Case (Diode Part, Per 1/2 Module) - - 0.98
RΘCS Case-to-Heat Sink (Conductive grease applied) - 0.05 -
※ Data and specifications subject to change without notice.
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SIM75D06AV1
Preliminary
Fig 1. Typ. IGBT Output Characteristics Fig 2. Typ. IGBT Out Characteristics
Fig 3. Typ. Transfer Characteristics Fig 4. Reverse Bias Operating Area
Fig 5. Forward Characteristics of Diode Fig 6. Operating Frequency vs Collector Current
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SIM75D06AV1
Preliminary
JUNE 2008
Headquarter:
#602, B/D, 402 BLD, BLK4, Techno-park, Wonmi-Gu,
Bucheon-City, S.KOREA
Tel)+82-32-234-4781, Fax)+82-32-234-4789
Package Outline (dimensions in mm)
Sales & Mark e ti ng
clzhang@semwiell.com
sales@semiwell.com
