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BTA04 T/D/S/A
BTB04 T/D/S/A
®
September 2001 - Ed: 1A
SENSITIVE GATE TRIACS
■Very low IGT = 10mA max
■Low IH= 15mA max
■BTA Family:
Insulating voltage = 2500V(RMS)
(UL recognized: E81734)
FEATURES
The BTA/BTB04 T/D/S/A triac family are high per-
formance glass passivated PNPN devices.
These parts are suitables for general purpose ap-
plications where gate high sensitivity is required.
Application on 4Q such as phase control and static
switching.
DESCRIPTION
A1
A2G
TO-220AB
Symbol Parameter Value Unit
IT(RMS) RMS on-state current (360° conduction angle) BTA Tc = 90°C 4 A
BTB Tc = 95°C
ITSM Non repetitive surge peak on-state current
(Tj initial = 25°C) tp = 8.3ms 42 A
tp = 10ms 40
I2tI
2
t value tp = 10ms 8 A2s
dI/dt Critical rate of rise of on-state current
Gate supply: IG= 50mA dIG/dt = 0.1A/µs Repetitive
F = 50Hz 10 A/µs
Non repetitive 50
Tstg
Tj Storage and operating junction temperature range -40 to +150
-40 to +110 °C
Tl Maximum lead soldering temperature during 10s at 4.5mm from case 260 °C
ABSOLUTE RATINGS (limiting values)
Symbol Parameter BTA / BTB04- Unit
400 T/D/S/A 600 T/D/S/A 700 T/D/S/A
VDRM
VRRM Repetitive peak off-state voltage Tj = 110°C 400 600 700 V
A1
A2
G
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Symbol Parameter Value Unit
Rth (j-a) Junction to ambient 60 °C/W
Rth (j-c) DC Junction to case for DC BTA 4.4 °C/W
BTB 3.2
Rth (j-c) AC Junction to case for 360° conduction angle (F = 50Hz) BTA 3.3 °C/W
BTB 2.4
GATE CHARACTERISTICS (maximum values)
PG(AV) =1W P
GM = 40W (tp = 20µs) IGM = 4A (tp = 20µs) VGM = 16V (tp = 20µs)
THERMAL RESISTANCE
Symbol Test conditions Quadrant BTA / BTB04 Unit
TDSA
I
GT VD= 12V (DC) RL=33ΩTj = 25°C I - II - III MAX. 5 5 10 10 mA
IV MAX. 5 10 10 25
VGT VD= 12V (DC) RL=33ΩTj = 25°C I - II - III - IV MAX. 1.5 V
VGD VD=V
DRM RL= 3.3kΩTj =110°C I - II - III - IV MIN. 0.2 V
tgt VD=V
DRM IG= 40mA
dIG/dt = 0.5A/µs Tj = 25°C I - II - III - IV TYP. 2 µs
ILIG= 1.2IGT Tj = 25°C I - III - IV TYP. 10 10 20 20 mA
II 20 20 40 40
IH*I
T
= 100mA Gate open Tj = 25°C MAX. 15 15 25 25 mA
VTM *I
TM = 5.5A tp = 380µs Tj = 25°C MAX. 1.65 V
IDRM
IRRM VDRM rated
VRRM rated Tj = 25°C MAX. 0.01 mA
Tj = 110°C MAX. 0.75
dV/dt * Linear slope up to
VD= 67% VDRM gate open Tj = 110°C TYP. 10 10 - - V/µs
MIN. - - 10 10
(dI/dt)c* (dI/dt)c = 1.8A/ms Tj = 110°C TYP. 1 1 5 5 V/µs
* For either polarity of electrode A2voltage with reference to electrode A1
ELECTRICAL CHARACTERISTICS
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Package IT(RMS) VDRM /V
RRM Sensitivity Specification
A V TDSA
BTA
(Insulated) 4 400 X X
600 X X
700 X X
BTB
(Uninsulated) 400 X X
600 X X
PRODUCT INFORMATION
BT A 04 - 400 T
Triac
Series
Insulation:
A: insulated
B: non insulated
Current: 04A
Voltage:
400: 400V
600: 600V
700: 700V
Sensitivity
ORDERING INFORMATION
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Fig. 3: Correlation between maximum RMS power
dissipation and maximum allowable temperature
(TambandTcase)fordifferentthermalresistances
heatsink + contact (BTB).
Fig. 4: RMS on-state current versus case temper-
ature.
1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2
0.01
0.1
1Zth/Rth
Zth(j-c)
Zth(j-a)
tp(s)
Fig. 5: Relative variation of thermal impedance
versus pulse duration. Fig. 6: Relative variation of gate trigger current
and holding current versus junction temperature.
Fig. 1: Maximum RMS power dissipation versus
RMS on-state current (F = 50Hz).(Curves are cut
off by (dI/dt)c limitation)
Fig. 2: Correlation between maximum RMS power
dissipation and maximum allowable temperature
(Tamb and Tcase) for different thermal resistances
heatsink + contact (BTA).
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Fig. 9: On-state characteristics (maximum values).
Fig. 7: Non repetitive surge peak on-state current
versus number of cycles. Fig. 8: Non repetitive surge peak on-state current
fora sinusoidalpulsewithwidth: t≤10ms,andcor-
responding value of I2t.
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Informationfurnishedisbelievedtobeaccurateandreliable.However,STMicroelectronicsassumesnoresponsibilityfortheconsequencesof
useofsuch information nor for any infringement of patents or other rightsofthirdpartieswhichmayresultfromitsuse. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written ap-
proval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics
© 2001 STMicroelectronics - Printed in Italy - All rights reserved.
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http://www.st.com
Ordering type Marking Package Weight Base qty Delivery mode
BTA/BTB04-xxxy BTA/BTB04-xxxy TO-220AB 2.3 g 250 Bulk
■Epoxy meets UL94,V0
■Cooling method: C
■Recommended torque value: 0.8 m.N.
■Maximum torque value: 1 m.N.
OTHER INFORMATION
PACKAGE MECHANICAL DATA
TO-220AB (Plastic)
M
B
l4
C
b2
a2
l2
c2
l3
b1
a1
A
F
L
I
ec1
REF. DIMENSIONS
Millimeters Inches
Min. Typ. Max. Min. Typ. Max.
A 15.20 15.90 0.598 0.625
a1 3.75 0.147
a2 13.00 14.00 0.511 0.551
B 10.00 10.40 0.393 0.409
b1 0.61 0.88 0.024 0.034
b2 1.23 1.32 0.048 0.051
C 4.40 4.60 0.173 0.181
c1 0.49 0.70 0.019 0.027
c2 2.40 2.72 0.094 0.107
e 2.40 2.70 0.094 0.106
F 6.20 6.60 0.244 0.259
I 3.75 3.85 0.147 0.151
I4 15.80 16.40 16.80 0.622 0.646 0.661
L 2.65 2.95 0.104 0.116
l2 1.14 1.70 0.044 0.066
l3 1.14 1.70 0.044 0.066
M 2.60 0.102
