SiSH407DN www.vishay.com Vishay Siliconix P-Channel 20 V (D-S) MOSFET FEATURES PowerPAK(R) 1212-8SH * TrenchFET(R) power MOSFET D D 8 D 7 D 6 5 * Low thermal resistance PowerPAK(R) package with small size and low 0.9 mm profile * 100 % Rg and UIS tested 0.9 mm 3.3 mm 1 3.3 1 2 S 3 S 4 S G mm Bottom View Top View PRODUCT SUMMARY * Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS S * Load switch * Battery switch VDS (V) RDS(on) max. () at VGS = -4.5 V RDS(on) max. () at VGS = -2.5 V RDS(on) max. () at VGS = -1.8 V Qg typ. (nC) ID (A) Configuration -20 0.0095 0.0138 0.0195 38 -25 f, g Single G D P-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free and halogen-free PowerPAK 1212-8 SiSH407DN-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless otherwise noted) PARAMETER Drain-source voltage Gate-source voltage Continuous drain current (TJ = 150 C) SYMBOL VDS VGS a TC = 25 C TC = 70 C TA = 25 C TA = 70 C Pulsed drain current Continuous source-drain diode current Avalanche current Single pulse avalanche energy Maximum power dissipation Operating junction and storage temperature range Soldering recommendations (peak temperature) b, c ID IDM TC = 25 C TA = 70 C L = 0.1 mH TC = 25 C TC = 70 C TA = 25 C TA = 70 C IS IAS EAS PD TJ, Tstg LIMIT -20 8 -25 f -25 f -15.4 a, b -12.3 a, b -40 -25 f -3 a, b -20 20 33 21 3.6 a, b 2.3 a, b -55 to +150 260 UNIT V A mJ W C THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYPICAL MAXIMUM UNIT t 10 s RthJA 28 35 Maximum junction-to-ambient a, e C/W Maximum junction-to-case (drain) Steady state RthJC 2.9 3.8 Notes a. Surface mounted on 1" x 1" FR4 board b. t = 10 s c. See solder profile (www.vishay.com/doc?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection d. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components e. Maximum under steady state conditions is 81 C/W f. Package limited g. TC = 25 C S18-1176-Rev. A, 26-Nov-2018 Document Number: 75341 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiSH407DN www.vishay.com Vishay Siliconix SPECIFICATIONS (TJ = 25 C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT VDS VGS = 0 V, ID = -250 A -20 - - V - -13 - - 2.6 - VDS = VGS, ID = -250 A -0.4 - -1 V nA Static Drain-source breakdown voltage VDS temperature coefficient VDS/TJ VGS(th) temperature coefficient VGS(th)/TJ Gate-source threshold voltage VGS(th) Gate-source leakage IGSS Zero gate voltage drain current IDSS On-state drain current a ID(on) Drain-source on-state resistance a Forward transconductance a Dynamic ID = -250 A RDS(on) gfs VDS = 0 V, VGS = 8 V - - 100 VDS = -20 V, VGS = 0 V - - -1 VDS = -20 V, VGS = 0 V, TJ = 55 C - - -10 VDS -5 V, VGS = -10 V -40 - - VGS = -4.5 V, ID = -15.3 A - 0.0082 0.0095 VGS = -2.5 V, ID = -13.1 A - 0.0115 0.0138 VGS = -1.8 V, ID= -5 A - 0.0156 0.0195 VDS = -10 V, ID = -15.3 A - 60 - - 2760 - VDS = -10 V, VGS= 0 V, f = 1 MHz - 405 - - 370 - mV/C A A S b Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Total gate charge Qg Gate-source charge Qgs Gate-drain charge Qgd Gate resistance Rg Turn-on delay time Rise time Turn-off delay time Fall time VDS = -10 V, VGS = -8 V, ID = -10 A - 62.5 93.8 - 38 57 VDS = -10 V, VGS = -4.5 V, ID = -10 A - 4 - - 10 - f = 1 MHz 0.9 4.4 8.8 - 23 35 - 28 42 - 92 138 - 38 57 - - -25 - - -40 - -0.82 -1.2 V - 56 80 ns - 50 75 nC - 25 - - 31 - td(on) tr td(off) pF VDD = -10 V, RL = 1 ID -10 A, VGEN = -4.5 V, Rg = 1 tf nC ns Drain-Source Body Diode Characteristics Continuous source-drain diode current IS Pulse diode forward current a ISM Body diode voltage VSD Body diode reverse recovery time trr Body diode reverse recovery charge Qrr Reverse recovery fall time ta Reverse recovery rise time tb TC = 25 C IS = -10 A IF = -10 A, di/dt = 100 A/s, TJ = 25 C A ns Notes a. Pulse test; pulse width 300 s, duty cycle 2 % b. Guaranteed by design, not subject to production testing Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S18-1176-Rev. A, 26-Nov-2018 Document Number: 75341 2 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiSH407DN www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TJ = 25 C, unless otherwise noted) 40 10 VDS = 5 V thru 2 V V GS = 1.8 V 8 I D - Drain Current (A) I D - Drain Current (A) 30 V GS = 1.5 V 20 6 4 T C = 25 C 10 2 T C = 125 C V GS = 1 V 0 0.0 T C = - 55 C 0 0.5 1.0 1.5 2.0 2.5 V DS - Drain-to-Source Voltage (V) 0.0 3.0 0.4 0.8 1.2 V GS - Gate-to-Source Voltage (V) Transfer Characteristics 0.03 5000 0.024 4000 C - Capacitance (pF) RDS(on) - On-Resistance () Output Characteristics VGS = 1.8 V 0.018 VGS = 2.5 V 0.012 Ciss 3000 2000 VGS = 4.5 V 0.006 1000 0 0 0 10 20 ID - Drain Current (A) 30 40 Coss Crss 0 5 10 15 V DS - Drain-to-Source Voltage (V) 20 Capacitance On-Resistance vs. Drain Current 1.6 R DS(on) - On-Resistance (Normalized) 8 VGS - Gate-to-Source Voltage (V) 1.6 ID = 15.3 A 6 V DS = 10 V V DS = 5 V V DS = 16 V 4 2 0 0 15 30 45 60 Qg - Total Gate Charge (nC) Gate Charge S18-1176-Rev. A, 26-Nov-2018 75 ID = 15.3 A V GS = 4.5 V 1.4 V GS = 2.5 V 1.2 1.0 0.8 0.6 - 50 - 25 0 25 50 75 100 125 150 T J - Junction Temperature (C) On-Resistance vs. Junction Temperature Document Number: 75341 3 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiSH407DN www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TJ = 25 C, unless otherwise noted) 100 0.03 R DS(on) - On-Resistance () I S - Source Current (A) ID = 15.3 A T J = 150 C 10 T J = 25 C 1 0.02 T J = 125 C 0.01 T J = 25 C 0.1 0.0 0 0.2 0.4 0.6 0.8 V SD - Source-to-Drain Voltage (V) 0 1.0 Source-Drain Diode Forward Voltage 2 4 6 V GS - Gate-to-Source Voltage (V) 8 On-Resistance vs. Gate-to-Source Voltage - 0.2 50 - 0.3 40 Power (W) VGS(th) (V) - 0.4 ID = 250 A - 0.5 30 20 - 0.6 10 - 0.7 - 0.8 - 50 - 25 0 25 50 75 100 T J - Temperature (C) 125 0 0.01 150 0.1 1 10 100 600 Time (s) Threshold Voltage Single Pulse Power, Junction-to-Ambient 100 Limited by R DS(on)* 100 A I D - Drain Current (A) 10 1 ms 10 ms 1 100 ms 1s 10 s TA = 25 C Single Pulse 0.1 DC BVDSS Limited 0.01 0.1 1 10 V DS - Drain-to-Source Voltage (V) * V GS > minimum VGS at which R DS(on) 100 Safe Operating Area, Junction-to-Ambient S18-1176-Rev. A, 26-Nov-2018 Document Number: 75341 4 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiSH407DN www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TJ = 25 C, unless otherwise noted) I D - Drain Current (A) 60 45 30 Package Limited 15 0 0 25 50 75 100 T C - Case Temperature (C) 125 150 40 2.0 30 1.5 Power (W) Power (W) Current Derating a 20 10 1.0 0.5 0 0.0 0 25 50 75 100 T C - Case Temperature (C) Power, Junction-to-Case 125 150 0 25 50 75 100 125 TA - Ambient Temperature (C) 150 Power, Junction-to-Ambient Note a. The power dissipation PD is based on TJ max. = 150 C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. S18-1176-Rev. A, 26-Nov-2018 Document Number: 75341 5 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiSH407DN www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TJ = 25 C, unless otherwise noted) 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 81 C/W 0.02 3. T JM - TA = PDMZthJA(t) Single Pulse 0.01 10-4 4. Surface Mounted 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 Square Wave Pulse Duration (s) 10-1 1 Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and reliability data, see www.vishay.com/ppg?75341. S18-1176-Rev. A, 26-Nov-2018 Document Number: 75341 6 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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