BSP603S2L OptiMOS Power-Transistor Product Summary Feature N-Channel Enhancement mode Logic Level Type BSP603S2L Package SOT 223 VDS 55 V R DS(on) 33 m ID 5.2 A SOT 223 Ordering Code Q67060-S7213 Marking 2N603L Maximum Ratings, at Tj = 25 C, unless otherwise specified Parameter Symbol Continuous drain current ID Value A TA=25C 5.2 TA=70C 4.1 Pulsed drain current ID puls Unit 21 TA=25C Gate source voltage VGS 20 V Power dissipation Ptot 1.8 W -55... +150 C TA=25C Operating and storage temperature Tj , Tstg IEC climatic category; DIN IEC 68-1 55/150/00 Page 1 2002-06-11 BSP603S2L Thermal Characteristics Parameter Symbol Values Unit min. typ. max. - 15 20 - - 120 - - 70 Characteristics Thermal resistance, junction - soldering point RthJS K/W (Pin 4) Thermal resistance, chip to ambient air: RthJA @ min. footprint @ 6 cm 2 cooling area F) Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. V(BR)DSS 55 - - VGS(th) 1.2 1.6 2 Static Characteristics Drain-source breakdown voltage V VGS =0V, ID =1mA Gate threshold voltage, VGS = VDS ID =50A Zero gate voltage drain current A IDSS VDS =55V, VGS =0V, Tj =25C - 0.1 1 VDS =55V, VGS =0V, Tj =150C - 10 100 IGSS - 10 100 nA RDS(on) - 27 40 m RDS(on) - 23 33 Gate-source leakage current VGS =20V, VDS =0V Drain-source on-state resistance VGS =4.5V, ID=2.6A Drain-source on-state resistance VGS =10V, ID =2.6A 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical without blown air. Page 2 2002-06-11 BSP603S2L Electrical Characteristics Parameter Symbol Conditions Values Unit min. typ. max. 8.9 17.8 - Dynamic Characteristics Transconductance gfs VDS 2*ID *RDS(on)max , S ID =5.2 Input capacitance Ciss VGS =0V, VDS =25V, - 1034 Output capacitance Coss f=1MHz - 244 325 Reverse transfer capacitance Crss - 75 110 Turn-on delay time td(on) - 10.8 16 VDD =30V, VGS=4.5V, 1390 pF ns ID =5.2A, RG=5.6 Rise time tr VDD =30V, VGS=4.5V, - 16 24 Turn-off delay time td(off) ID =5.2mA, - 28 40 Fall time tf RG=5.6 - 15 23 Gate to source charge Q gs VDD=44V, I D=5.2A - 3.5 4.6 Gate to drain charge Q gd - 10.6 16 Gate charge total Qg - 31 42 V(plateau) VDD=44V, I D=5.2A - 3 - V IS - - 5.2 A - - 21 Gate Charge Characteristics VDD=44V, I D=5.2A, nC VGS=0 to 10V Gate plateau voltage Reverse Diode Inverse diode continuous TA=25C forward current Inv. diode direct current, pulsed I SM Inverse diode forward voltage VSD VGS=0V, IF =5.2A - 0.8 1.1 V Reverse recovery time t rr VR=30V, IF =l S, - 46 58 ns Reverse recovery charge Q rr diF/dt=100A/s - 44 55 nC Page 3 2002-06-11 BSP603S2L 1 Power dissipation 2 Drain current Ptot = f (TC ) ID = f (TC ) parameter: VGS 10 V 2.4 BSP603S2L 6 A 2 5 1.8 4.5 1.6 4 ID Ptot W BSP603S2L 1.4 3.5 1.2 3 1 2.5 0.8 2 0.6 1.5 0.4 1 0.2 0.5 0 0 20 40 60 80 100 120 C 0 0 160 20 40 60 80 100 120 C 160 TC TC 3 Safe operating area 4 Max. transient thermal impedance ID = f ( VDS ) ZthJC = f (tp ) parameter : D = 0 , TC = -- parameter : D = tp /T 10 2 10 1 RD S( ) on = VD BSP603S2L K/W /I D A S tp = 160.0s ID 1 ms 10 0 10 1 Z thJC 10 2 BSP603S2L 10 0 10 -1 10 ms D = 0.50 0.20 10 0.10 -2 0.05 10 -1 single pulse 0.02 10 -3 0.01 DC 10 -2 -1 10 10 0 10 1 V 10 2 10 -4 -6 -5 -4 -3 -2 -1 0 10 10 10 10 10 10 10 s 10 tp VDS Page 4 2002-06-11 2 BSP603S2L 5 Typ. output characteristic 6 Typ. drain-source on resistance ID = f (VDS ); Tj=25C RDS(on) = f (ID ) parameter: tp = 80 s parameter: VGS A 11 BSP603S2L 110 Ptot = 1.8W ih gf e b 10 ID 9 d 8 7 6 5 3.2 d 3.4 e 3.6 f 3.8 g 4.0 h 4.5 i 10.0 d 90 3.0 c BSP603S2L VGS [V] a 2.8 RDS(on) 13 80 e 70 60 50 f 40 c 4 g 30 h 3 2 0 0 20 b 10 1 a 0.5 1 1.5 2 2.5 3 3.5 i V 4 0 0 5 VGS [V] = d 3.4 e f 3.6 3.8 g 4.0 2 h i 4.5 10.0 4 6 A 8 11 ID VDS 7 Typ. transfer characteristics 8 Typ. forward transconductance ID= f ( VGS ); VDS 2 x ID x RDS(on)max parameter: tp = 80 s gfs = f(ID ); Tj=25C parameter: gfs 26 11 S A 22 9 20 18 g fs ID 8 7 16 6 14 5 12 10 4 8 3 6 2 4 1 0 0 2 0.5 1 1.5 2 2.5 V 3.5 0 0 2 4 6 8 A 12 ID VGS Page 5 2002-06-11 BSP603S2L 9 Drain-source on-state resistance 10 Typ. gate threshold voltage RDS(on) = f (Tj ) VGS(th) = f (Tj) parameter : ID = 2.6 A, VGS = 10 V parameter: VGS = VDS 100 BSP603S2L 2.5 V V GS(th) RDS(on) 80 70 60 250 A 1.5 50 A 50 40 1 98% 30 typ 20 0.5 10 0 -60 -20 20 60 100 C 0 -60 180 -20 20 60 100 Tj C 160 Tj 11 Typ. capacitances 12 Forward character. of reverse diode C = f (VDS) I F = f (VSD) parameter: VGS =0V, f=1 MHz parameter: Tj , tp = 80 s 10 4 10 2 pF BSP603S2L A Ciss IF 10 1 C 10 3 Coss Crss 10 2 10 0 Tj = 25 C typ Tj = 150 C typ Tj = 25 C (98%) Tj = 150 C (98%) 10 1 0 5 10 15 20 30 V VDS 10 -1 0 0.4 0.8 1.2 1.6 2 2.4 V 3 VSD Page 6 2002-06-11 BSP603S2L 13 Typ. gate charge 14 Drain-source breakdown voltage VGS = f (Q Gate) parameter: ID = 5.2 A pulsed V(BR)DSS = f (Tj) 16 parameter: ID=10 mA BSP603S2L 66 V V(BR)DSS V VGS 12 10 0,2 VDS max 62 60 0,8 VDS max 8 58 6 56 4 54 2 52 0 0 BSP603S2L 5 10 15 20 25 30 35 40 nC 50 QGate Page 7 50 -60 -20 20 60 100 C 180 Tj 2002-06-11 BSP603S2L Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 Munchen (c) Infineon Technologies AG 1999 All Rights Reserved. Attention please! Maximum soldering conditions: Maximum 3 times IR profile acc. to IPC 9501 (235C +5/-0) Jedec level 3 The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. 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