2002-06-11
Page 1
BSP603S2L
OptiMOS
Power-Transistor
Product Summary
VDS 55 V
RDS(on) 33 m
ID5.2 A
Feature
N-Channel
Enhancement mode
Logic Level SOT 223
Marking
2N603L
Type Package Ordering Code
BSP603S2L SOT 223 Q67060-S7213
Maximum Ratings, at Tj = 25 °C, unless otherwise specified
Parameter Symbol Value Unit
Continuous drain current
TA=25°C
TA=70°C
ID
5.2
4.1
A
Pulsed drain current
TA=25°C
ID puls 21
Gate source voltage VGS ± 20 V
Power dissipation
TA=25°C
Ptot 1.8 W
Operating and storage temperature Tj , Tstg -55... +150 °C
IEC climatic category; DIN IEC 68-1 55/150/00
2002-06-11
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BSP603S2L
Thermal Characteristics
Parameter Symbol Values Unit
min. typ. max.
Characteristics
Thermal resistance, junction - soldering point
(Pin 4)
RthJS - 15 20 K/W
Thermal resistance, chip to ambient air:
@ min. footprint
@ 6 cm2 cooling area F)
RthJA
-
-
-
-
120
70
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Static Characteristics
Drain-source breakdown voltage
VGS=0V, ID=1mA
V(BR)DSS 55 - - V
Gate threshold voltage, VGS = VDS
ID=50µA
VGS(th) 1.2 1.6 2
Zero gate voltage drain current
VDS=55V, VGS=0V, Tj=25°C
VDS=55V, VGS=0V, Tj=150°C
IDSS
-
-
0.1
10
1
100
µA
Gate-source leakage current
VGS=20V, VDS=0V
IGSS - 10 100 nA
Drain-source on-state resistance
VGS=4.5V, ID=2.6A
RDS(on) - 27 40 m
Drain-source on-state resistance
VGS=10V, ID=2.6A
RDS(on) - 23 33
1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
2002-06-11
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BSP603S2L
Electrical Characteristics
Parameter Symbol Conditions Values Unit
min. typ. max.
Dynamic Characteristics
Transconductance gfs VDS
2*ID*RDS(on)max,
ID=5.2
8.9 17.8 - S
Input capacitance Ciss VGS=0V, VDS=25V,
f=1MHz
- 1034 1390 pF
Output capacitance Coss - 244 325
Reverse transfer capacitance Crss - 75 110
Turn-on delay time td(on) VDD=30V, VGS=4.5V,
ID=5.2A,
RG=5.6
- 10.8 16 ns
Rise time trVDD=30V, VGS=4.5V,
ID=5.2mA,
RG=5.6
- 16 24
Turn-off delay time td(off) - 28 40
Fall time tf- 15 23
Gate Charge Characteristics
Gate to source charge Qgs VDD=44V, ID=5.2A - 3.5 4.6 nC
Gate to drain charge Qgd - 10.6 16
Gate charge total QgVDD=44V, ID=5.2A,
VGS=0 to 10V
- 31 42
Gate plateau voltage V(plateau) VDD=44V, ID=5.2A - 3 - V
Reverse Diode
Inverse diode continuous
forward current
ISTA=25°C - - 5.2 A
Inv. diode direct current, pulsed ISM - - 21
Inverse diode forward voltage VSD VGS=0V, IF=5.2A - 0.8 1.1 V
Reverse recovery time trr VR=30V, IF=lS,
diF/dt=100A/µs
- 46 58 ns
Reverse recovery charge Qrr - 44 55 nC
2002-06-11
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BSP603S2L
1 Power dissipation
Ptot = f (TC)
0 20 40 60 80 100 120 °C 160
TC
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
W
2.4 BSP603S2L
P
tot
2 Drain current
ID = f (TC)
parameter: VGS
10 V
0 20 40 60 80 100 120 °C 160
TC
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
A
6 BSP603S2L
ID
4 Max. transient thermal impedance
ZthJC = f (tp)
parameter : D = tp/T
10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 2
s
tp
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
K/W
BSP603S2L
ZthJC
single pulse
0.01
0.02
0.05
0.10
0.20
D = 0.50
3 Safe operating area
ID = f ( VDS )
parameter : D = 0 , TC = --
10 -1 10 0 10 1 10 2
V
VDS
-2
10
-1
10
0
10
1
10
2
10
A
BSP603S2L
ID
R
DS(on)
= V
DS
/ I
D
DC
10 ms
1 ms
tp = 160.0µs
2002-06-11
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BSP603S2L
5 Typ. output characteristic
ID = f (VDS); Tj=25°C
parameter: tp = 80 µs
0 0.5 1 1.5 2 2.5 3 3.5 4 V5
VDS
0
1
2
3
4
5
6
7
8
9
10
11
A
13 BSP603S2L
ID
VGS [V]
a
a 2.8
b
b 3.0
c
c 3.2
dd 3.4
e
e 3.6
f
f 3.8
g
g 4.0
h
h 4.5
i
Ptot = 1.8W
i 10.0
6 Typ. drain-source on resistance
RDS(on) = f (ID)
parameter: VGS
0 2 4 6 8 A11
ID
0
10
20
30
40
50
60
70
80
90
110 BSP603S2L
RDS(on)
VGS [V] =
d
d
3.4
e
e
3.6
f
f
3.8
g
g
4.0
h
h
4.5
i
i
10.0
7 Typ. transfer characteristics
ID= f ( VGS ); VDS
2 x ID x RDS(on)max
parameter: tp = 80 µs
0 0.5 1 1.5 2 2.5 V 3.5
VGS
0
1
2
3
4
5
6
7
8
9
A
11
ID
8 Typ. forward transconductance
gfs = f(ID); Tj=25°C
parameter: gfs
02468 A 12
ID
0
2
4
6
8
10
12
14
16
18
20
22
S
26
g
fs
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BSP603S2L
9 Drain-source on-state resistance
RDS(on) = f (Tj)
parameter : ID = 2.6 A, VGS = 10 V
-60 -20 20 60 100 °C 180
Tj
0
10
20
30
40
50
60
70
80
100 BSP603S2L
RDS(on)
typ
98%
10 Typ. gate threshold voltage
VGS(th) = f (Tj)
parameter: VGS = VDS
-60 -20 20 60 100 °C 160
Tj
0
0.5
1
1.5
V
2.5
VGS(th)
50
A
250
A
11 Typ. capacitances
C = f (VDS)
parameter: VGS=0V, f=1 MHz
0 5 10 15 20 V30
VDS
1
10
2
10
3
10
4
10
pF
C
Ciss
Coss
Crss
12 Forward character. of reverse diode
IF = f (VSD)
parameter: T
j
, tp = 80 µs
0 0.4 0.8 1.2 1.6 2 2.4 V3
VSD
-1
10
0
10
1
10
2
10
A
BSP603S2L
I
F
Tj = 25 °C typ
Tj = 25 °C (98%)
Tj = 150 °C typ
Tj = 150 °C (98%)
2002-06-11
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BSP603S2L
13 Typ. gate charge
VGS = f (QGate)
parameter: ID = 5.2 A pulsed
0 5 10 15 20 25 30 35 40 nC 50
QGate
0
2
4
6
8
10
12
V
16 BSP603S2L
V
GS
0,8 VDS max
DS max
V
0,2
14 Drain-source breakdown voltage
V(BR)DSS = f (Tj)
parameter: ID=10 mA
-60 -20 20 60 100 °C 180
Tj
50
52
54
56
58
60
62
V
66 BSP603S2L
V
(BR)DSS
2002-06-11
Page 8
BSP603S2L
Published by
Infineon Technologies AG,
Bereichs Kommunikation
St.-Martin-Strasse 53,
D-81541 München
© Infineon Technologies AG 1999
All Rights Reserved.
Attention please!
Maximum soldering conditions: Maximum 3 times IR profile acc. to IPC 9501 (235°C +5/-0)
Jedec level 3
The information herein is given to describe certain components and shall not be considered as warranted
characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.
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