ITT SEMICOND/ INTERMETA SOE D Mf 4642711 0002813 134 mist JT-03-0% 1N4154 Silicon Epitaxial Planar Diode fast switching diode. max.1.9 This diode is also available in glass case DO-34 max.1.9 3.9 =| 2.9 min 16 max. max Cathode Cathode 1 Mark | Mark E E | max, 0.52 { IImax.o42 8 ee t bp These diodes are delivered taped. Glass case JEDEC DO-35 Glass case JEDEC DO-34 Details see Taping. 54 A 2 according to DIN 41880 Weight approx. 0.13 g Weight approx. 0.1g Dimensions in mm Dimensions in mm These diodes are branded on reel available branded or AMMOPAK in clear text or in international color code Absolute Maximum Ratings Symbol Value Unit Reverse Voltage VR 25 Vv Peak Reverse Voltage Vam 35 Vv Rectified Current (Average) lo 1501) mA Half Wave Rectification with Resist. Load at Tamb = 25 C and f 250 Hz Surge Forward Current at t<1s and T, = 25 C lesm 500 mA Power Dissipation at Tamp =25 C case DO-35 Prot 5001) mW Power Dissipation at Tamp = 25 C case DO-34 Prot 3001) mw Junction Temperature case DO-35 Tj 200 C Junction Temperature case DO-34 Tj 175 C Storage Temperature Range case DO-35 Ts 65 to +200 C Storage Temperature Range case DO-34 Ts 65to +175 C 1) Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature. 94 ITT SEMICOND/ INTERMETA SOE D M@ 4482711 00024814 070 mm ISI Characteristics at T) = 25 C Symbol Min. Typ. Max. Unit Forward Voltage Ve - - 1 Vv at ip = 30 mA Leakage Current at V,_ = 25V Ip - - 100 nA at Vp = 25 V, Tj = 150 C Ip - - 100 HA Reverse Breakdown Voltage ViBr)R 35 - - Vv tested with 5 uA Pulses Capacitance Ctot - - 4 pF at Ve = Va =0 Voltage Rise when Switching ON Vir - - 2.5 Vv tested with 50 mA Forward Pulses tp = 0.1 ps, Rise Time <30 ns, fp = 5 to 100 kHz Reverse Recovery Time from Ip = 10 mA through I; = 10 mA to Ip =1 mA ter - - 4 ns from lp =10 mA to IR = 1 MA, Va =6V, R, = 1002 ter - - 2 ns Thermal Resistance case DO-35 Rha - - 0.351) K/mWw Junction to Ambient Air Thermal Resistance case DO-34 Rtha - - 0.41) K/mWw Junction to Ambient Air Rectification Efficiency TW 0.45 - - ~ at f = 100 MHz, Var = 2V | 1) Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature. 5OR Vor =2V See 2nF | 5kQ % 222 Rectification Efficiency Measurement Circuit 95 ITT SEMICOND/ INTERMETA SOE D 1N4154 M@ 4642711 0002615 TO? mm IST Forward characteristics mA 1N4154 103 7 7, =100C 7,= 25C 101 102 Dynamic forward resistance versus forward current Q 1N4154 7,= 25C f =1kH2 102 10" 1 10 1 - Admissible power dissipation versus ambient temperature (case DO-35) Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature mW 1N4154 1000 900 Prot 800 700 600 500 NX 400 300 200 NY 100 N\ 0 0 100 200C Relative capacitance versus reverse voltage 1N4154 7, = 25C Wi Cot Ve} f = 1MHz Crot (0) 09 a 08 0,7 96 0? mA ITT SEMICOND/ INTERMETA SOE D MB 46442711 0002816 W3 MIST 1N4154 Leakage current versus junction temperature nA 1N4154 0 100 200 C Admissible repetitive peak forward current versus pulse duration (case DO-35) Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature 1N4154 I V=t/T T=Wfp 97