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DATA SHEET
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
NPN SILICON RF TRANSISTOR
2SC3357
NPN EPITAXIAL SILICON RF TRANSISTOR
FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION
3-PIN POWER MINIMOLD
Document No. PU10211EJ01V0DS (1st edition)
(Previous No. P10357EJ4V1DS00)
Date Published January 2003 CP(K)
Printed in Japan
The mark •
••
• shows major revised poi nts.
NEC Compound Semiconductor Devices 1985, 2003
FEATURES
• Low noise and high gain
NF = 1.1 dB TYP., Ga = 7.5 dB TYP. @ VCE = 10 V, IC = 7 mA, f = 1 GHz
NF = 1.8 dB TYP., Ga = 9.0 dB TYP. @ VCE = 10 V, IC = 40 mA, f = 1 GHz
• High power gain : MAG = 10 dB TYP. @ IC = 40 mA, f = 1 GHz
• Large Ptot : Ptot = 1.2 W (Mounted on 16 cm2 × 0.7 mm (t) ceramic substrate)
• Small package : 3-pin power minimold package
ORDERING INFORMATION
Part Number Quantity Supplyi ng Form
2SC3357 25 pcs (Non reel) • 12 mm wide embos sed taping
2SC3357-T1 1 kpcs / reel • Collect or f ace the perforation side of the tape
Remark To order evaluation samples, contact your nearby sales office.
The unit sample quantity is 25 pcs.
ABSOLUTE MAXIMUM RATINGS (TA = +25°
°°
°C)
Parameter Symbol Ratings Unit
Collector to Base Voltage VCBO 20 V
Collector to Emitter Voltage VCEO 12 V
Emitter to Base Voltage VEBO 3.0 V
Collector Current IC100 mA
Total Power Dissipation Ptot Note 1.2 W
Junction Temperature Tj150 °C
Storage Temperat ure Tstg −65 to +150 °C
Note Mounted on 16 cm2 × 0.7 mm (t) ceramic substrate
Data Sheet PU10211EJ01V0DS
2
2SC3357
THERMAL RESISTANCE
Parameter Symbol Value Unit
Junct i on t o Ambient Resist ance Rth (j-a) Note 62.5 °C/W
Note Mounted on 16 cm2 × 0.7 mm (t) ceramic substrate
ELECTRICAL CHARACTERISTICS (TA = +25°
°°
°C)
Parameter Symbol Test Condit i ons MIN. TYP. MAX. Unit
DC Characteristics
Collector Cut-off Current ICBO VCB = 10 V, I E = 0 m A – – 1.0
µ
A
Emitter Cut-off Current IEBO VEB = 1.0 V, I C = 0 mA – – 1.0
µ
A
DC Current Gain hFE Note 1 VCE = 10 V, IC = 20 mA 50 120 250 –
RF Characteristics
Gain Bandwidth Product fTVCE = 10 V, I C = 20 mA – 6.5 – GHz
Insertion Power Gain S21e2VCE = 10 V, IC = 20 mA, f = 1 GHz – 9.0 – dB
Noise Figure (1) NF VCE = 10 V, I C = 7 mA , f = 1 GHz – 1.1 – dB
Noise Figure (2) NF VCE = 10 V, I C = 40 mA , f = 1 GHz – 1.8 3.0 dB
Reverse Trans f er Capacitanc e Cre Note 2 VCB = 10 V , IE = 0 mA, f = 1 MHz – 0.65 1.0 pF
Notes 1. Pulse measurement: PW ≤ 350
µ
s, Duty Cycle ≤ 2%
2. The emitter terminal and the case shall be connected to the guard terminal of the three-terminal
capacitance bridge.
hFE CLASSIFICATION
Rank RH RF RE
Marking RH RF RE
hFE Value 50 to 100 80 to 160 125 to 250
Data Sheet PU10211EJ01V0DS 3
2SC3357
TYPICAL CHARACTERISTICS (TA = +25°
°°
°C, unless otherwise specified)
DC Current Gain h
FE
Collector Current I
C
(mA)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
200
50
100
10
20
15100.5 50
V
CE
= 10 V
2
1
025 50 75 100 125 150
Total Power Dissipation P
tot
(W)
Ambient Temperature T
A
(˚C)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
Ceramic substrate
16 cm
2
× 0.7 mm (t)
Free air R
th (j-a)
312.5˚C/W
Reverse Transfer Capacitance C
re
(pF)
Collector to Base Voltage V
CB
(V)
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
2
1
0.5
0.3 0.50.2 1 2 5 10 3020
f = 1 MHz
V
CE
= 10 V
Gain Bandwidth Product f
T
(GHz)
Collector Current I
C
(mA)
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
10
3
2
5
0.2
0.3
0.5
1
0.1 1 5 10 500.1 0.5 100
V
CE
= 10 V
f = 1 GHz
Collector Current I
C
(mA)
INSERTION POWER GAIN
vs. COLLECTOR CURRENT
Insertion Power Gain |S
21e
|
2
(dB)
15
10
0
5
0.5 1 10 50570
V
CE
= 10 V
I
C
= 20 mA
Frequency f (GHz)
INSERTION POWER GAIN, MAG
vs. FREQUENCY
Insertion Power Gain |S
21e
|
2
(dB)
Maximum Available Power Gain MAG (dB)
25
15
20
5
10
0
0.05 0.1 0.5 10.2 2
MAG
|S
21e
|
2
Data Sheet PU10211EJ01V0DS
4
2SC3357
90
100
80
70
60
40
50
30 20 30 40 50 60 70
Collector Current I
C
(mA)
IM
2
, IM
3
vs. COLLECTOR CURRENT
2nd Order Intermodulation Distortion IM
2
(dBc)
3rd Order Intermodulation Distortion IM
3
(dBc)
IM
2
IM
3
V
CE
= 10 V
V
o
= 100 dB V/50 Ω
R
g
= R
e
= 50 Ω
IM
2
: f = 90 + 100 MHz
IM
3
: f = 2 × 200 – 190 MHz
µ
7
0
1
2
3
4
5
6
0.5 1 5 10 50 70
Collector Current I
C
(mA)
NOISE FIGURE vs.
COLLECTOR CURRENT
Noise Figure NF (dB)
V
CE
= 10 V
f = 1 GHz
Remark The graphs indicate nominal characteristics.
S-PARAMETERS
S-parameters/Noise parameters are provided on the NEC Compound Semiconductor Devices Web site in a form
(S2P) that enables direct import to a microwave circuit simulator without keyboard input.
Click here to download S-parameters.
[RF and Microwave] → [Device Parameters]
URL http://www.csd-nec.com/
Data Sheet PU10211EJ01V0DS 5
2SC3357
SMITH CHART
S
21e
-FREQUENCY
CONDITION : V
CE
= 10 V, I
C
= 20 mA
90˚
0˚
30˚
–30˚
60˚
–60˚
180˚
150˚
–150˚
120˚
–120˚ –90˚
3 6 9 12 15
S
21e
f = 0.2 GHz
f = 2.0 GHz
S
12e
-FREQUENCY
CONDITION : V
CE
= 10 V, I
C
= 20 mA
90˚
0˚
30˚
–30˚
60˚
–60˚
180˚
150˚
–150˚
120˚
–120˚ –90˚
0.1 0.2 0.3 0.4 0.5
S
12e
f = 0.2 GHz
f = 2.0 GHz
S
11e
, S
22e
-FREQUENCY
CONDITION : V
CE
= 10 V
60
20
30
40
50
70
80
90
100
110
120
130
140
150
−160
−150
−140
−130
−120
−110
−100
−90
−80
−70
−60
−50
−40
−30
−20
−10
0
10
0.22
0.20
0.18
0.16
0.14
0.12
0.10
0.08
0.06
0.04
0.21
0.19
0.17
0.15
0.13
0.11
0.09
0.07
0.05
0.03
0.02
0.01
0
0.49
0.48
0.47
0.46
0.45
0.44
0.43
0.42
0.41
0.40
0.39
0.38
0.37
0.36
0.35
0.34
0.33
0.32
0.31
0.30
0.29
0.28
0.27
0.26
0.25
0.24
0.23
0.28
0.30
0.32
0.34
0.36
0.38
0.40
0.42
0.44
0.46
0.29
0.31
0.33
0.35
0.37
0.39
0.41
0.43
0.45
0.47
0.48
0.49
0
0.01
0.02
0.03
0.04
0.05
0.06
0.07
0.08
0.09
0.10
0.11
0.12
0.13
0.14
0.15
0.16
0.17
0.18
0.19
0.20
0.21
0.22
0.23
0.24
0.25
0.26
0.27
W
A
V
E
L
E
N
G
T
H
S
T
O
W
A
R
D
L
O
A
D
A
N
G
L
E
O
F
R
E
F
L
E
C
T
I
O
N
C
O
E
F
F
C
I
E
N
T
I
N
D
E
G
R
E
E
S
W
A
V
E
L
E
N
G
T
H
S
T
O
W
A
R
D
G
E
N
E
R
A
T
O
R
REACTANCE COMPONENT
(
R
––––
Z
O
)
(
+JX
––––
Z
O
)
P
OS
ITIVE
R
EA
C
TA
NC
E
CO
M
P
ON
EN
T
NE
G
AT
IVE
R
E
AC
TA
N
CE
C
OM
PO
NE
NT
(
−JX
––––
Z
O
)
0.8
0.7
0.6
0.3
0.2
0.1
0.4
0.5
5.0
10
50
3.0
4.0
1.8
2.0
1.2
1.0
0.9
1.4
1.6
20
2.0
50
10
6.0
4.0
3.0
1.8
1.6
1.4
1.2
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
1.0
20
0.2
0.4
0.6
0.8
1.0
0.2
0.4
0.6
0.8
1.0
0.2
1.0
0.8
0.6
0.4
1.0
0.8
0.6
0.2
0.4
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.4
1.6
1.8
2.0
3.0
4.0
5.0
10
20
0
1.2
f = 0.2 GHz
f = 0.2 GHz
f = 2.0 GHz
f = 20 GHz
S
11e
S
22e
: I
C
= 20 mA
: I
C
= 40 mA
Data Sheet PU10211EJ01V0DS
6
2SC3357
PACKAGE DIMENSIONS
3-PIN POWER MINIMOLD (UNIT: mm)
1.5±0.1
0.41
+0.03
–0.06
4.5±0.1
0.42±0.060.42±0.06
1.6±0.2
3.0
1.5
C
EB
2.5±0.1
4.0±0.25
0.8 MIN.
0.47±0.06
E : Emitter
C: Collector (Fin)
B : Base
(IEC : SOT-89)
PIN CONNECTIONS
Data Sheet PU10211EJ01V0DS 7
2SC3357
M8E 00. 4 - 0110
The information in this document is current as of January, 2003. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or
data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all
products and/or types are available in every country. Please check with an NEC sales representative
for availability and additional information.
No part of this document may be copied or reproduced in any form or by any means without prior
written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.
NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of
third parties by or arising from the use of NEC semiconductor products listed in this document or any other
liability arising from the use of such products. No license, express, implied or otherwise, is granted under any
patents, copyrights or other intellectual property rights of NEC or others.
Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
circuits, software and information in the design of customer's equipment shall be done under the full
responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third
parties arising from the use of these circuits, software and information.
While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers
agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize
risks of damage to property or injury (including death) to persons arising from defects in NEC
semiconductor products, customers must incorporate sufficient safety measures in their design, such as
redundancy, fire-containment, and anti-failure features.
NEC semiconductor products are classified into the following three quality grades:
"Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products
developed based on a customer-designated "quality assurance program" for a specific application. The
recommended applications of a semiconductor product depend on its quality grade, as indicated below.
Customers must check the quality grade of each semiconductor product before using it in a particular
application.
"Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio
and visual equipment, home electronic appliances, machine tools, personal electronic equipment
and industrial robots
"Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems and medical equipment for life support, etc.
The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's
data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not
intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness
to support a given application.
(Note)
(1) "NEC" as used in this statement means NEC Corporation, NEC Compound Semiconductor Devices, Ltd.
and also includes its majority-owned subsidiaries.
(2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for
NEC (as defined above).
•
•
•
•
•
•
NEC Compound Semiconductor Devices Hong Kong Limited
Hong Kong Head Office
Taipei Branch Office
Korea Branch Office
TEL: +852-3107-7303
TEL: +886-2-8712-0478
TEL: +82-2-528-0301
FAX: +852-3107-7309
FAX: +886-2-2545-3859
FAX: +82-2-528-0302
NEC Electronics (Europe) GmbH http://www.ee.nec.de/
TEL: +49-211-6503-01 FAX: +49-211-6503-487
California Eastern Laboratories, Inc. http://www.cel.com/
TEL: +1-408-988-3500 FAX: +1-408-988-0279
0209
NEC Compound Semiconductor Devices, Ltd.
5th Sales Group, Sales Division TEL: +81-3-3798-6372 FAX: +81-3-3798-6783 E-mail: salesinfo@csd-nec.com
Business issue
NEC Compound Semiconductor Devices, Ltd. http://www.csd-nec.com/
Sales Engineering Group, Sales Division
E-mail: techinfo@csd-nec.com FAX: +81-44-435-1918
Technical issue
2SC3357
