DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D102 PRF947 UHF wideband transistor Product specification Supersedes data of 1999 Mar 01 1999 Jul 23 Philips Semiconductors Product specification UHF wideband transistor PRF947 FEATURES PINNING * Small size PIN * Low noise 1 base * Low distortion 2 emitter * High gain 3 collector DESCRIPTION * Gold metallization ensures excellent reliability. APPLICATIONS 3 handbook, halfpage * Communication and instrumentation systems. 3 1 DESCRIPTION Silicon NPN transistor in a surface mount 3-pin SOT323 package. The transistor is primarily intended for wideband applications in the GHz-range in the RF front end of analog and digital cellular telephones, cordless phones, radar detectors, pagers and satellite TV-tuners. 2 1 2 Top view MAM062 Marking code: V0. Fig.1 Simplified outline (SOT323) and symbol. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Cre feedback capacitance IC = 0; VCB = 6 V; f = 1 MHz - 0.3 - pF fT transition frequency IC = 15 mA; VCE = 6 V; fm = 1 GHz - 8.5 - GHz GUM maximum unilateral power gain IC = 15 mA; VCE = 6 V; Tamb = 25 C; f = 1 GHz - 16 - dB NF noise figure S = opt; IC = 5 mA; VCE = 6 V; f = 1 GHz - 1.5 - dB Ptot total power dissipation Ts = 60 C; note 1 - - 250 mW Rth j-s thermal resistance from junction to soldering point Ptot = 250 mW - - 460 K/W Note 1. Ts is the temperature at the soldering point of the collector pin. 1999 Jul 23 2 Philips Semiconductors Product specification UHF wideband transistor PRF947 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter - 20 V VCEO collector-emitter voltage open base - 10 V VEBO emitter-base voltage open collector - 1.5 V IC DC collector current - 50 mA IC(AV) average collector current - 50 mA Ptot total power dissipation - 250 mW Tstg storage temperature -65 +150 C Tj junction temperature - 175 C Ts = 60 C; note 1 Note 1. Ts is the temperature at the soldering point of the collector pin. THERMAL CHARACTERISTICS SYMBOL Rth j-s PARAMETER thermal resistance from junction to soldering point CONDITIONS Ptot = 250 mW; Ts = 60 C; note 1 Note 1. Ts is the temperature at the soldering point of the collector pin. 1999 Jul 23 3 VALUE UNIT 460 K/W Philips Semiconductors Product specification UHF wideband transistor PRF947 CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT DC characteristics V(BR)CBO collector-base breakdown voltage IC = 100 A; IE = 0 20 - - V V(BR)CEO collector-emitter breakdown voltage IC = 100 A; IB = 0 10 - - V V(BR)EBO emitter-base breakdown voltage IE = 10 A; IC = 0 1.5 - - V ICBO collector-base leakage current VCB = 10 V; IE = 0 - - 100 nA IEBO emitter-base leakage current VEB = 1 V; IC = 0 - - 100 nA hFE DC current gain IC = 5 mA; VCE = 6 V 50 100 200 IC = 15 mA; VCE = 6 V - 100 - AC characteristics Cre feedback capacitance IC = 0; VCB = 6 V; f = 1 MHz - 0.3 - pF fT transition frequency IC = 15 mA; VCE = 6 V; fm = 1 GHz - 8.5 - GHz |s21|2 insertion gain IC = 15 mA; VCE = 6 V; f = 1 GHz - 14.5 - dB GUM maximum unilateral power gain; note 1 IC = 15 mA; VCE = 6 V; Tamb = 25 C; f = 1 GHz - 16 - dB IC = 15 mA; VCE = 6 V; Tamb = 25 C; f = 2 GHz - 10 - dB S = opt; IC = 5 mA; VCE = 6 V; f = 1 GHz - 1.5 - dB S = opt; IC = 5 mA; VCE = 6 V; f = 2 GHz - 2.1 - dB NF noise figure Note s 21 2 dB 1. GUM is the maximum unilateral power gain, assuming s12 is zero. G UM = 10 log -------------------------------------------------------( 1 - s 11 2 ) ( 1 - s 22 2 ) 1999 Jul 23 4 Philips Semiconductors Product specification UHF wideband transistor PRF947 MGS496 MGS497 120 400 handbook, halfpage handbook, halfpage Ptot (mW) hFE 300 80 200 40 100 0 0 0 50 100 150 Ts (C) 0 200 10 20 30 40 50 IC (mA) VCE = 6 V. Fig.2 Power derating as a function of soldering point temperature. Fig.3 DC current gain as a function of collector current; typical values. MGS498 MGS499 0.5 10 handbook, halfpage handbook, halfpage Cre fT (GHz) (pF) 0.4 8 0.3 6 0.2 4 0.1 2 0 0 4 8 VCB (V) 0 12 0 10 20 IC = Ic = 0; f = 1 MHz. VCE = 6 V; fm = 1 GHz; Tamb = 25 C. Fig.4 Fig.5 Feedback capacitance as a function of collector-base voltage; typical values. 1999 Jul 23 5 30 I C (mA) 40 Transition frequency as a function of collector current; typical values. Philips Semiconductors Product specification UHF wideband transistor PRF947 MGS500 gain (dB) handbook, halfpage MSG gain (dB) Gmax 40 16 MGS501 50 20 handbook, halfpage GUM 12 30 8 20 4 10 GUM MSG Gmax 0 102 0 0 10 20 30 I C (mA) 40 103 f = 1 GHz; VCE = 6 V. IC = 5 mA; VCE = 6 V. Fig.6 Fig.7 Gain as a function of collector current; typical values. MGR502 50 f (MHz) 104 Gain as a function of frequency; typical values. MGS503 50 handbook, halfpage handbook, halfpage gain (dB) gain (dB) 40 40 GUM 30 30 MSG MSG GUM 20 20 Gmax Gmax 10 10 0 102 103 f (MHz) 0 102 104 IC = 15 mA; VCE = 6 V. IC = 30 mA; VCE = 6 V. Fig.8 Fig.9 Gain as a function of frequency; typical values. 1999 Jul 23 6 103 f (MHz) 104 Gain as a function of frequency; typical values. Philips Semiconductors Product specification UHF wideband transistor PRF947 MGS504 4 MGS505 4 handbook, halfpage handbook, halfpage NF (dB) NF (dB) (1) 3 3 (2) (1) 2 (2) (3) 2 (3) 1 0 10-1 VCE = 6 V. (1) f = 2 GHz (2) f = 1.5 GHz (3) f = 1 GHz (4) (5) (6) 1 1 10 IC (mA) 0 102 102 f (MHz) 104 VCE = 6 V. (1) IC = 30 mA (2) IC = 15 mA (3) IC = 5 mA. (4) f = 900 MHz (5) f = 800 MHz (6) f = 500 MHz. Fig.10 Minimum noise figure as a function of collector current; typical values. 1999 Jul 23 103 Fig.11 Minimum noise figure as a function of frequency; typical values. 7 Philips Semiconductors Product specification UHF wideband transistor handbook, full pagewidth PRF947 unstable region source unstable region load 90 1.0 +1 135 45 +2 +0.5 0.8 0.6 +0.2 0.4 +5 opt 0.2 (1) 180 0.5 0 1 2 (4) 0 (2) (6) -0.2 -5 -0.5 -135 0 (5) (3) f = 1 GHz; VCE = 6 V; IC = 5 mA; Zo = 50 . (1) G = 17 dB (2) G = 16 dB (3) G = 15 dB (4) NF = 1.6 dB (5) NF = 1.8 dB (6) NF = 2 dB. 5 -2 - 45 -1 1.0 - 90 MGS506 Fig.12 Common emitter available gain, noise and stability circles; typical values. handbook, full pagewidth unstable region load 90 unstable region source 1.0 +1 135 45 +2 +0.5 0.8 0.6 +0.2 0.4 +5 opt (1) 180 0 0.5 1 0.2 2 5 0 (5) 0.2 0 (6) f = 2 GHz; VCE = 6 V; IC = 5 mA; Zo = 50 . (1) Gmax = 10.9 dB (2) G = 10 dB (3) G = 9 dB (4) G = 8 dB (5) NF = 2.1 dB (6) NF = 2.3 dB (7) NF = 2.5 dB. -0.2 (7) (2) -5 (3) (4) -135 -0.5 -2 - 45 -1 1.0 - 90 MGS507 Fig.13 Common emitter available gain, noise and stability circles; typical values. 1999 Jul 23 8 Philips Semiconductors Product specification UHF wideband transistor PRF947 APPLICATION INFORMATION SEQUENCE No. SPICE parameters for the PRF947 die. SEQUENCE No. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19(1) 20(1) 21(1) 22 23 24 25 26 27 28 29 30 31 32 33 34 35(1) 36(1) 37(1) 38 39(2) 1999 Jul 23 PARAMETER IS BF NF VAF IKF ISE NE BR NR VAR IKR ISC NC RB IRB RBM RE RC XTB EG XTI CJE VJE MJE TF XTF VTF ITF PTF CJC VJC MJC XCJC TR CJS VJS MJS FC Cbpb VALUE 0.466 150.4 1.000 53.06 180.0 57.30 2.000 27.68 1.000 1.976 9.943 1.420 1.000 12.14 0.000 4.957 0.597 1.988 0.000 1.110 3.000 0.568 600.0 0.412 2.037 30.90 3.148 131.8 0.000 205.8 296.2 0.118 0.104 0.000 0.000 700.0 0.000 0.943 83.00 PARAMETER 40(2) Cbpe AF KF 41 42 UNIT fA - - V mA fA - - - V mA aA - A - eV - pF mV - ps - V mA deg fF mV - - ps F mV - - fF VALUE UNIT 84.00 1.000 4 x 10-16 fF - - Notes 1. These parameters have not been extracted, the default values are shown. 2. Cbpb, Cbpe: base-bondpad and emitter-bondpad capacitance to collector. C cb handbook, halfpage L1 LB B L2 B' C' E' C be C Cce LE MBC964 L3 E QLB = 50; QLE = 50; QLB(f) = QLB(f/fc); QLE(f) = QLE(f/fc); fc = corner frequency = 1 GHz. Fig.14 Package equivalent circuit SOT323. List of components (see Fig.14) DESIGNATION 9 VALUE UNIT Cbe 2 fF Ccb 100 fF Cce 100 fF L1 0.34 nH L2 0.10 nH L3 0.34 nH LB 0.60 nH LE 0.60 nH Philips Semiconductors Product specification UHF wideband transistor PRF947 90 handbook, full pagewidth 1.0 +1 135 45 +2 +0.5 0.8 0.6 +0.2 0.4 +5 0.2 3 GHz 180 0.2 0 0.5 1 2 GHz 2 5 0 0 1 GHz 100 MHz 500 MHz -0.2 -5 200 MHz -135 -0.5 -2 - 45 -1 1.0 - 90 MGS508 VCE = 6 V; IC = 15 mA; Zo = 50 . Fig.15 Common emitter input reflection coefficient (s11); typical values. 90 handbook, full pagewidth 135 45 200 MHz 500 MHz 1 GHz 2 GHz 3 GHz 100 MHz 180 50 40 30 20 0 10 -135 - 45 - 90 MGS509 VCE = 6 V; IC = 15 mA. Fig.16 Common emitter forward transmission coefficient (s21); typical values. 1999 Jul 23 10 Philips Semiconductors Product specification UHF wideband transistor PRF947 90 handbook, full pagewidth 135 45 3 GHz 2 GHz 180 0.5 0.4 0.3 0.2 1 GHz 500 MHz 200 MHz 100 MHz 0.1 0 -135 - 45 - 90 MGS510 VCE = 6 V; IC = 15 mA. Fig.17 Common emitter reverse transmission coefficient (s12); typical values. 90 handbook, full pagewidth 1.0 +1 135 0.8 45 +2 +0.5 0.6 +0.2 0.4 +5 0.2 180 0.2 0 0.5 1 5 0 0 1 GHz 500 MHz 2 GHz 100 MHz 3 GHz 200 MHz - 5 -0.2 -135 2 -0.5 -2 - 45 -1 1.0 - 90 MGS511 VCE = 6 V; IC = 15 mA; Zo = 50 . Fig.18 Common emitter output reflection coefficient (s22); typical values. 1999 Jul 23 11 Philips Semiconductors Product specification UHF wideband transistor PRF947 PACKAGE OUTLINE Plastic surface mounted package; 3 leads SOT323 D E B A X HE y v M A 3 Q A A1 c 1 2 e1 bp Lp w M B e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max bp c D E e e1 HE Lp Q v w mm 1.1 0.8 0.1 0.4 0.3 0.25 0.10 2.2 1.8 1.35 1.15 1.3 0.65 2.2 2.0 0.45 0.15 0.23 0.13 0.2 0.2 OUTLINE VERSION SOT323 1999 Jul 23 REFERENCES IEC JEDEC EIAJ SC-70 12 EUROPEAN PROJECTION ISSUE DATE 97-02-28 Philips Semiconductors Product specification UHF wideband transistor PRF947 DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1999 Jul 23 13 Philips Semiconductors Product specification UHF wideband transistor PRF947 NOTES 1999 Jul 23 14 Philips Semiconductors Product specification UHF wideband transistor PRF947 NOTES 1999 Jul 23 15 Philips Semiconductors - a worldwide company Argentina: see South America Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140, Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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